IRF530

N-CHANNEL 100V - 0.115 Ω - 14A TO-220

LOW GATE CHARGE STripFET™ II POWER MOSFET

TYPE VDSS RDS(on) ID

IRF530 100 V <0.16 Ω 14 A

■ TYPICAL RDS(on) = 0.115Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
3
■ 175 oC OPERATING TEMPERATURE 1
2

DESCRIPTION TO-220
This MOSFET series realized with STMicroelectronics
unique STripFET™ process has specifically been
designed to minimize input capacitance and gate charge.
It is therefore suitable as primary switch in advanced
high-efficiency, high-frequency isolated DC-DC
converters for Telecom and Computer applications. It is INTERNAL SCHEMATIC DIAGRAM
also intended for any applications with low gate drive
requirements.

APPLICATIONS
■ HIGH CURRENT, HIGH SWITCHING SPEED

■ SOLENOID AND RELAY DRIVERS

■ REGULATOR

■ DC-DC & DC-AC CONVERTERS

■ MOTOR CONTROL, AUDIO AMPLIFIERS

■ AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, etc.)

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 100 V
VDGR Drain-gate Voltage (RGS = 20 kΩ) 100 V
VGS Gate- source Voltage ± 20 V
ID Drain Current (continuous) at TC = 25°C 14 A
ID Drain Current (continuous) at TC = 100°C 10 A
IDM(•) Drain Current (pulsed) 56 A
Ptot Total Dissipation at TC = 25°C 60 W
Derating Factor 0.4 W/°C
dv/dt (1) Peak Diode Recovery voltage slope 20 V/ns
EAS (2) Single Pulse Avalanche Energy 70 mJ
Tstg Storage Temperature
-55 to 175 °C
Tj Operating Junction Temperature
(•) Pulse width limited by safe operating area. (1) ISD ≤14A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting T j = 25 oC, ID = 14A, VDD = 50V
August 2002 1/8
NEW DATASHEET ACCORDING TO PCN DSG/CT/1C02 MARKING: IRF530 @.
IRF530

THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 2.5 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
Tl Maximum Lead Temperature For Soldering Purpose 300 °C

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit

V(BR)DSS Drain-source ID = 250 µA, VGS = 0 100 V

Breakdown Voltage

IDSS Zero Gate Voltage VDS = Max Rating 1 µA

Drain Current (VGS = 0) VDS = Max Rating TC = 100°C 10 µA

IGSS Gate-body Leakage VGS = ± 20 V ±100 nA

Current (VDS = 0)

ON (*)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA 2 3 4 V

Static Drain-source On VGS = 10 V ID = 7 A 0.115 0.16 Ω

RDS(on)
Resistance

DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit

gfs (*) Forward Transconductance VDS = 15 V ID = 7 A 7 S

Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 458 pF

Coss Output Capacitance 68 pF
Crss Reverse Transfer 29 pF
Capacitance

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 IRF530

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit

td(on) Turn-on Delay Time VDD = 50 V ID = 7 A 16 ns

tr Rise Time RG = 4.7 Ω VGS = 10 V 25 ns
(Resistive Load, Figure 3)
Qg Total Gate Charge VDD = 80V ID = 14A VGS= 10V 16 21 nC
Qgs Gate-Source Charge 3.7 nC
Qgd Gate-Drain Charge 4.7 nC

SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit

td(off) Turn-off Delay Time VDD = 50 V ID = 7 A 32 ns

tf Fall Time RG = 4.7Ω, VGS = 10 V 8 ns
(Resistive Load, Figure 3)

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD Source-drain Current 14 A
ISDM (•) Source-drain Current (pulsed) 56 A

VSD (*) Forward On Voltage ISD = 14 A VGS = 0 1.6 V

trr Reverse Recovery Time ISD = 14 A di/dt = 100A/µs 92 ns

Qrr Reverse Recovery Charge VDD = 10V Tj = 150°C 230 nC
IRRM Reverse Recovery Current (see test circuit, Figure 5) 5 A
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.

Safe Operating Area Thermal Impedance

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IRF530

Output Characteristics Transfer Characteristics

Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage Capacitance Variations

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 IRF530

Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature

Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature

. .

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IRF530

Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuits For Resistive Fig. 4: Gate Charge test Circuit
Load

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

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 IRF530

TO-220 MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151

E
A

D
C

D1

L2
F1

G1

H2
G

Dia.
F
F2

L5
L9
L7
L6 L4
P011C

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IRF530

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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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