IRF740

N-CHANNEL 400V - 0.46Ω - 10A TO-220

PowerMESH™II MOSFET

TYPE VDSS RDS(on) ID

IRF740 400 V < 0.55 Ω 10 A

■ TYPICAL RDS(on) = 0.46Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ LOW GATE CHARGE
■ VERY LOW INTRINSIC CAPACITANCES 3
2
1

TO-220
DESCRIPTION
The PowerMESH™II is the evolution of the first gen-
eration of MESH OVERLAY™. The layout refine-
ments introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead- INTERNAL SCHEMATIC DIAGRAM
ing edge for what concerns swithing speed, gate
charge and ruggedness.

APPLICATIONS
■ HIGH-EFFICIENCY DC-DC CONVERTERS

■ UPS AND MOTOR CONTROL

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 400 V
VDGR Drain-gate Voltage (RGS = 20 kΩ) 400 V
VGS Gate- source Voltage ± 20 V
ID Drain Current (continuos) at TC = 25°C 10 A
ID Drain Current (continuos) at TC = 100°C 6.3 A
IDM (l) Drain Current (pulsed) 40 A
PTOT Total Dissipation at TC = 25°C 125 W
Derating Factor 1.0 W/°C
dv/dt(1) Peak Diode Recovery voltage slope 4.0 V/ns
Tstg Storage Temperature
– 65 to 150 °C
Tj Max. Operating Junction Temperature
(●) Pulse width limited by safe operating area (1)ISD ≤10A, di/dt ≤120A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX.

June 2002 1/8

IRF740

THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 1 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
Tl Maximum Lead Temperature For Soldering Purpose 300 °C

AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive 10 A
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy 520 mJ
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source ID = 250 µA, VGS = 0 400 V
Breakdown Voltage
IDSS Zero Gate Voltage VDS = Max Rating 1 µA
Drain Current (VGS = 0)
VDS = Max Rating, TC = 125 °C 50 µA
IGSS Gate-body Leakage VGS = ±20V ±100 nA
Current (VDS = 0)

ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 2 3 4 V
RDS(on) Static Drain-source On VGS = 10V, ID = 5.3 A 0.46 0.55 Ω
Resistance

DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (1) Forward Transconductance VDS > ID(on) x RDS(on)max, 7 S
ID = 6 A
Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 1259 pF
Coss Output Capacitance 206 pF
Crss Reverse Transfer 25.6 pF
Capacitance

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 IRF740

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on) Turn-on Delay Time VDD = 200V, ID = 5 A 17 ns
RG = 4.7Ω VGS = 10V
tr Rise Time (see test circuit, Figure 3) 10 ns

Qg Total Gate Charge VDD = 320V, ID = 10.7 A, 35 43 nC

Qgs Gate-Source Charge VGS = 10V 11 nC
Qgd Gate-Drain Charge 12 nC

SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(off) Off-voltage Rise Time Vclamp = 320V, ID = 10 A 10 ns
tf Fall Time RG = 4.7Ω, VGS = 10V 10 ns
tc Cross-over Time (see test circuit, Figure 5) 17 ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD Source-drain Current 10 A
ISDM (2) Source-drain Current (pulsed) 40 A
VSD (1) Forward On Voltage ISD = 10 A, VGS = 0 1.6 V
trr Reverse Recovery Time ISD = 10 A, di/dt = 100A/µs, 370 ns
Qrr Reverse Recovery Charge VDD = 100V, Tj = 150°C 3.2 µC
IRRM Reverse Recovery Current (see test circuit, Figure 5) 17 A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.

Safe Operating Area Thermal Impedence

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IRF740

Output Characteristics Transfer Characteristics

Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage Capacitance Variations

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 IRF740

Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature

Source-drain Diode Forward Characteristics

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IRF740

Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuit For Fig. 4: Gate Charge test Circuit
Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

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 IRF740

TO-220 MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151

E
A

D
C

D1

L2
F1

G1

H2
G

Dia.
F
F2

L5
L9
L7
L6 L4
P011C

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IRF740

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consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
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mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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