Sts4Dpf30L: Dual P-Channel 30V - 0.07 - 4A SO-8 Stripfet™ Power Mosfet

STS4DPF30L
DUAL P-CHANNEL 30V - 0.07 Ω - 4A SO-8

STripFET™ POWER MOSFET
PRELIMINARY DATA
TYPE VDSS RDS(on) ID
STS4DPF30L 30 V <0.08 Ω 4A
■ TYPICAL RDS(on) = 0.07 Ω
■ STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
■ LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" SO-8
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
■ POWER MANAGEMENT IN CELLULAR
PHONES
■ DC-DC CONVERTER
ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 30 V
VDGR Drain-gate Voltage (RGS = 20 kΩ) 30 V
VGS Gate- source Voltage ± 16 V
Drain Current (continuous) at TC = 25°C Single Operation 4 A
ID
Drain Current (continuous) at TC = 100°C Single Operation 2.5 A
IDM(•) Drain Current (pulsed) 16 A
Total Dissipation at TC = 25°C Dual Operation 2.0 W
Ptot
Total Dissipation at TC = 25°C Single Operation 1.6 W
(•) Pulse width limited by safe operating area. Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
April 2002 1/6
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
STS4DPF30L
THERMAL DATA
Rthj-amb (*)Thermal Resistance Junction-ambient Single Operation 78 °C/W
Dual Operating 62.5 °C/W
Tj Thermal Operating Junction-ambient -55 to150 °C
Tstg Storage Temperature -55 to 150 °C
(*) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu and t [ 10 sec.
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source ID = 250 µA, VGS = 0 30 V

Breakdown Voltage
IDSS Zero Gate Voltage VDS = Max Rating 1 µA

Drain Current (VGS = 0) VDS = Max Rating TC = 125°C 10 µA
IGSS Gate-body Leakage VGS = ± 16 V ±100 nA

Current (VDS = 0)
ON (*)
VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA 1 V
RDS(on) Static Drain-source On VGS = 10 V ID = 2 A 0.070 0.08 Ω

Resistance VGS = 4.5 V ID = 2 A 0.085 0.10 Ω
DYNAMIC
gfs (*) Forward Transconductance VDS= 15V ID = 2 A 10 S
Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 1350 pF

Coss Output Capacitance 490 pF
Crss Reverse Transfer 130 pF
Capacitance
2/6
STS4DPF30L
ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON
td(on) Turn-on Delay Time VDD = 15 V ID = 2 A 25 ns

tr Rise Time RG = 4.7 Ω VGS = 4.5 V 35 ns
(Resistive Load, Figure 1)
Qg Total Gate Charge VDD= 24 V ID= 4 A VGS= 5 V 12.5 16 nC
Qgs Gate-Source Charge 5 nC
Qgd Gate-Drain Charge (See test circuit, Figure 2) 3 nC
SWITCHING OFF
td(off) Turn-off Delay Time VDD = 15 V ID = 2 A 125 ns

tf Fall Time RG = 4.7Ω, VGS = 4.5 V 35 ns
(Resistive Load, Figure 1)
SOURCE DRAIN DIODE

ISD Source-drain Current 4 A
ISDM (•) Source-drain Current (pulsed) 16 A
VSD (*) Forward On Voltage ISD = 4 A VGS = 0 1.2 V
trr Reverse Recovery Time ISD = 4 A di/dt = 100A/µs 45 ns

Qrr Reverse Recovery Charge VDD = 15 V Tj = 150°C 36 nC
IRRM Reverse Recovery Current (See test circuit, Figure 3) 1.6 A
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
3/6
STS4DPF30L
Fig. 1: Switching Times Test Circuits For Resistive Fig. 2: Gate Charge test Circuit
Load
Fig. 3: Test Circuit For Diode Recovery Behaviour
4/6
STS4DPF30L
SO-8 MECHANICAL DATA
mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 1.75 0.068
a1 0.1 0.25 0.003 0.009
a2 1.65 0.064
a3 0.65 0.85 0.025 0.033
b 0.35 0.48 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.25 0.5 0.010 0.019
c1 45 (typ.)
D 4.8 5.0 0.188 0.196
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 3.81 0.150
F 3.8 4.0 0.14 0.157
L 0.4 1.27 0.015 0.050
M 0.6 0.023
S 8 (max.)
0016023
5/6
STS4DPF30L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics

 2002 STMicroelectronics - All Rights Reserved
All other names are the property of their respective owners.
STMicroelectronics GROUP OF COMPANIES

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Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
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STS4DPF30L

DUAL P-CHANNEL 30V - 0.07 Ω - 4A SO-8

TYPE VDSS RDS(on) ID

ABSOLUTE MAXIMUM RATINGS

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

V(BR)DSS Drain-source ID = 250 µA, VGS = 0 30 V

IDSS Zero Gate Voltage VDS = Max Rating 1 µA

IGSS Gate-body Leakage VGS = ± 16 V ±100 nA

RDS(on) Static Drain-source On VGS = 10 V ID = 2 A 0.070 0.08 Ω

gfs (*) Forward Transconductance VDS= 15V ID = 2 A 10 S

Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 1350 pF

ELECTRICAL CHARACTERISTICS (continued)

td(on) Turn-on Delay Time VDD = 15 V ID = 2 A 25 ns

td(off) Turn-off Delay Time VDD = 15 V ID = 2 A 125 ns

SOURCE DRAIN DIODE

VSD (*) Forward On Voltage ISD = 4 A VGS = 0 1.2 V

trr Reverse Recovery Time ISD = 4 A di/dt = 100A/µs 45 ns

Fig. 3: Test Circuit For Diode Recovery Behaviour

SO-8 MECHANICAL DATA

The ST logo is registered trademark of STMicroelectronics

All other names are the property of their respective owners.

STMicroelectronics GROUP OF COMPANIES

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