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    2NS04Z

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    Nazım Dallas
    This document provides detailed specifications for an N-channel clamped MOSFET. It includes maximum ratings, thermal characteristics, electrical characteristics both on and off state, as well as switching and diode characteristics. The MOSFET has a typical RDS(on) of 0.012 ohms and is rated for a continuous drain current of 40 amps.

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    2NS04Z

    Uploaded by

    Nazım Dallas
    180 views6 pages
    This document provides detailed specifications for an N-channel clamped MOSFET. It includes maximum ratings, thermal characteristics, electrical characteristics both on and off state, as well as switching and diode characteristics. The MOSFET has a typical RDS(on) of 0.012 ohms and is rated for a continuous drain current of 40 amps.

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    Datasheet transistor

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    This document provides detailed specifications for an N-channel clamped MOSFET. It includes maximum ratings, thermal characteristics, electrical characteristics both on and off state, as well as switching and diode characteristics. The MOSFET has a typical RDS(on) of 0.012 ohms and is rated for a continuous drain current of 40 amps.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    180 views6 pages

    2NS04Z

    Uploaded by

    Nazım Dallas
    This document provides detailed specifications for an N-channel clamped MOSFET. It includes maximum ratings, thermal characteristics, electrical characteristics both on and off state, as well as switching and diode characteristics. The MOSFET has a typical RDS(on) of 0.012 ohms and is rated for a continuous drain current of 40 amps.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    STP62NS04Z

    N-CHANNEL CLAMPED 12mΩ - 40A TO-220


    FULLY PROTECTED MESH OVERLAY™ MOSFET
    ADVANCED DATA

    TYPE VDSS RDS(on) ID

    STP62NS04Z CLAMPED < 0.014 Ω 40 A (*)


    ■ TYPICAL RDS(on) = 0.012 Ω
    ■ 100% AVALANCHE TESTED
    ■ LOW CAPACITANCE AND GATE CHARGE
    ■ 175°C MAXIMUM JUNCTION TEMPERATURE 3
    2
    1
    DESCRIPTION
    This fully clamped MOSFET is produced by using TO-220
    the latest advanced Company’s Mesh Overlay pro-
    cess which is based on a novel strip layout. The in-
    herent benefits of the new technology coupled with
    the extra clamping capabilities make this product
    particularly suitable for the harshest operation con-
    ditions such as those encountered in the automotive INTERNAL SCHEMATIC DIAGRAM
    environment .Any other application requiring extra
    ruggedness is also recommended.

    APPLICATIONS
    ■ ABS,SOLENOID DRIVERS
    ■ POWER TOOLS

    ORDERING INFORMATION
    SALES TYPE MARKING PACKAGE PACKAGING
    STP62NS04Z P62NS04Z TO-220 TUBE

    November 2003 1/6

    www.DataSheet.in
    STP62NS04Z

    ABSOLUTE MAXIMUM RATINGS


    Symbol Parameter Value Unit
    VDS Drain-source Voltage (VGS = 0) CLAMPED V
    VDG Drain-gate Voltage CLAMPED V
    VGS Gate- source Voltage CLAMPED V
    ID (*) Drain Current (continuous) at TC = 25°C 40 A
    ID (*) Drain Current (continuous) at TC = 100°C 40 A
    IDG Drain Gate Current (continuous) ± 50 mA
    IGS Gate Source Current (continuous) ± 50 mA
    IDM () Drain Current (pulsed) 160 A
    PTOT Total Dissipation at TC = 25°C 110 W
    Derating Factor 0.74 W/°C
    dv/dt (1) Peak Diode Recovery voltage slope 5 V/ns
    EAS (2) Single Pulse Avalanche Energy 500 mJ
    VESD ESD(HBM-C=100 pF, R=1.5 KΩ) 8 kV
    Tstg Storage Temperature
    – 55 to 175 °C
    Tj Operating Junction Temperature
    (•)Pulse width limited by safe operating area
    (*) Current Limited by Package
    (1) ISD ≤40A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX.
    (2) Starting Tj = 25 °C, ID = 20A, VDD = 20 V

    THERMAL DATA
    Rthj-case Thermal Resistance Junction-case Max 1.36 °C/W
    Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
    Tl Maximum Lead Temperature For Soldering Purpose 300 °C
    (1.6mm from case, for 10sec)

    ELECTRICAL CHARACTERISTICS (TCASE = 25°C UNLESS OTHERWISE SPECIFIED)


    OFF
    Symbol Parameter Test Conditions Min. Typ. Max. Unit
    V(BR)DSS Clamped Voltage ID = 1 mA, VGS = 0 33 V
    IDSS Zero Gate Voltage VDS = 16 V TBD µA
    Drain Current (VGS = 0)
    IGSS Gate-body Leakage VGS = ±10 V TBD µA
    Current (VDS = 0)
    VGSS Gate-Source IGS = ±100 µA 18 V
    Breakdown Voltage

    ON (1)
    Symbol Parameter Test Conditions Min. Typ. Max. Unit
    VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2 4 V
    RDS(on) Static Drain-source On VGS = 10 V, ID = 20 A 12 14 mΩ
    Resistance

    2/6

    www.DataSheet.in
    STP62NS04Z

    ELECTRICAL CHARACTERISTICS (CONTINUED)

    DYNAMIC
    Symbol Parameter Test Conditions Min. Typ. Max. Unit
    gfs (1) Forward Transconductance VDS = 15 V ,ID = 18 A 17.5 S
    Ciss Input Capacitance VDS = 25 V, f = 1 MHz, VGS = 0 1330 pF
    Coss Output Capacitance 420 pF
    Crss Reverse Transfer 135 pF
    Capacitance

    SWITCHING ON
    Symbol Parameter Test Conditions Min. Typ. Max. Unit
    Qg Total Gate Charge VDD = 20 V, ID = 40 A, 34 47 nC
    VGS = 10 V
    Qgs Gate-Source Charge 10 nC
    Qgd Gate-Drain Charge 11.5 nC

    SWITCHING OFF
    Symbol Parameter Test Conditions Min. Typ. Max. Unit
    tr(Voff) Off Voltage Rise Time VCLAMP = 30 V, ID = 40 A, 30 ns
    tf Fall Time RG = 4.7 Ω, VGS = 10 V 54 ns
    tc Cross-over Time (see test circuit, Figure 5) 90 ns
    td Turn Off Delay Time 36 ns

    SOURCE DRAIN DIODE


    Symbol Parameter Test Conditions Min. Typ. Max. Unit
    ISD Source-drain Current 40 A
    ISDM (2) Source-drain Current (pulsed) 160 A
    VSD (1) Forward On Voltage ISD = 40 A, VGS = 0 1.5 V
    trr Reverse Recovery Time ISD = 40 A, di/dt = 100 A/µs 45 ns
    Qrr VDD = 20 V, Tj = 150°C
    Reverse Recovery Charge 65 nC
    (see test circuit, Figure 5)
    IRRM Reverse Recovery Current 2.9 A
    Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
    2. Pulse width limited by safe operating area.

    3/6

    www.DataSheet.in
    STP62NS04Z

    Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform

    Fig. 3: Switching Times Test Circuit For Fig. 4: Gate Charge test Circuit
    Resistive Load

    Fig. 5: Test Circuit For Inductive Load Switching


    And Diode Recovery Times

    4/6

    www.DataSheet.in
    STP62NS04Z

    TO-220 MECHANICAL DATA

    mm. inch
    DIM.
    MIN. TYP MAX. MIN. TYP. MAX.
    A 4.40 4.60 0.173 0.181
    b 0.61 0.88 0.024 0.034
    b1 1.15 1.70 0.045 0.066
    c 0.49 0.70 0.019 0.027
    D 15.25 15.75 0.60 0.620
    E 10 10.40 0.393 0.409
    e 2.40 2.70 0.094 0.106
    e1 4.95 5.15 0.194 0.202
    F 1.23 1.32 0.048 0.052
    H1 6.20 6.60 0.244 0.256
    J1 2.40 2.72 0.094 0.107
    L 13 14 0.511 0.551
    L1 3.50 3.93 0.137 0.154
    L20 16.40 0.645
    L30 28.90 1.137
    øP 3.75 3.85 0.147 0.151
    Q 2.65 2.95 0.104 0.116

    5/6

    www.DataSheet.in
    STP62NS04Z

    Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
    consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
    its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
    mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
    previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
    systems without express written approval of STMicroelectronics.
    © The ST logo is a registered trademark of STMicroelectronics

    © 2003 STMicroelectronics - Printed in Italy - All Rights Reserved


    STMicroelectronics GROUP OF COMPANIES
    Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco
    Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
    © http://www.st.com

    6/6

    www.DataSheet.in

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