Stp5Nc50 - Stp5Nc50Fp Stb5Nc50 - Stb5Nc50-1: N-Channel 500V - 1.3 - 5.5A To-220/Fp/D Pak/I Pak Powermesh Ii Mosfet
Stp5Nc50 - Stp5Nc50Fp Stb5Nc50 - Stb5Nc50-1: N-Channel 500V - 1.3 - 5.5A To-220/Fp/D Pak/I Pak Powermesh Ii Mosfet
Stp5Nc50 - Stp5Nc50Fp Stb5Nc50 - Stb5Nc50-1: N-Channel 500V - 1.3 - 5.5A To-220/Fp/D Pak/I Pak Powermesh Ii Mosfet
STB5NC50 - STB5NC50-1
N-CHANNEL 500V - 1.3Ω - 5.5A TO-220/FP/D2PAK/I2PAK
PowerMesh II MOSFET
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
THERMAL DATA
TO-220
D 2PAK TO-220FP
I2 PAK
Rthj-case Thermal Resistance Junction-case Max 1.25 3.57 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
Tl Maximum Lead Temperature For Soldering Purpose 300 °C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive 5.5 A
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy 280 mJ
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
ON (1)
Symbol Parameter Test Condition s Min. Typ. Max. Unit
VGS(th) Gate Threshold Voltage V DS = VGS, ID = 250µA 2 3 4 V
RDS(on) Static Drain-source On V GS = 10V, ID = 2 A 1.3 1.5 Ω
Resistance
DYNAMIC
Symbol Parameter Test Condition s Min. Typ. Max. Unit
g fs (1) Forward Transconductance V DS > ID(on) x RDS(on)max, 4 S
ID = 2.5A
C iss Input Capacitance V DS = 25V, f = 1 MHz, VGS = 0 480 pF
C oss Output Capacitance 80 pF
Crss Reverse Transfer 11.5 pF
Capacitance
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STP5NC50 - STP5NC50FP - STB5NC50 - STB5NC50-1
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol Parameter Test Condition s Min. Typ. Max. Unit
td(on) V DD = 250V, ID = 2.5A 14 ns
Turn-on Delay Time
R G = 4.7Ω V GS = 10V
tr Rise Time 15 ns
(see test circuit, Figure 3)
Qg Total Gate Charge V DD = 400V, ID = 5.5A, 17.5 24.5 nC
V GS = 10V
Qgs Gate-Source Charge 3 nC
Qgd Gate-Drain Charge 9 nC
SWITCHING OFF
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
tr(Voff) Off-voltage Rise Time VDD = 400V, ID = 5.5A, 12 ns
R G = 4.7Ω, VGS = 10V
tf Fall Time 14 ns
(see test circuit, Figure 5)
tc Cross-over Time 20 ns
Safe Operating Area for TO-220/D2PAK/I2PAK Safe Operating Area for TO-220FP
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STP5NC50 - STP5NC50FP - STB5NC50 - STB5NC50-1
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STP5NC50 - STP5NC50FP - STB5NC50 - STB5NC50-1
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STP5NC50 - STP5NC50FP - STB5NC50 - STB5NC50-1
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For Fig. 4: Gate Charge test Circuit
Resistive Load
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STP5NC50 - STP5NC50FP - STB5NC50 - STB5NC50-1
mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
E
A
D
C
D1
L2
F1
G1
H2
G
Dia.
F
F2
L5
L9
L7
L6 L4
P011C
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STP5NC50 - STP5NC50FP - STB5NC50 - STB5NC50-1
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.5 0.045 0.067
F2 1.15 1.5 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
E
A
D
B
L3
L6
L7
F1
¯
G1
G
H
F2
1 2 3
L5
L2 L4
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STP5NC50 - STP5NC50FP - STB5NC50 - STB5NC50-1
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
D1 8 0.315
E 10 10.4 0.393
E1 8.5 0.334
R 0.4 0.015
V2 0º 8º
3
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1
STP5NC50 - STP5NC50FP - STB5NC50 - STB5NC50-1
mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A1
C2
B2
B
e
E
L1
L2 D L
P011P5/E
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STP5NC50 - STP5NC50FP - STB5NC50 - STB5NC50-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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