STP6NK90Z - STP6NK90ZFP

STB6NK90Z - STW7NK90Z
N-CHANNEL 900V - 1.56Ω - 5.8A TO-220/FP/D2PAK/TO-247
Zener-Protected SuperMESH™Power MOSFET

TYPE VDSS RDS(on) ID Pw

STP6NK90Z 900 V <2 Ω 5.8 A 140 W
STP6NK90ZFP 900 V <2 Ω 5.8 A 30 W
STB6NK90Z 900 V <2 Ω 5.8 A 140 W
STW7NK90Z 900 V <2 Ω 5.8 A 140 W 2
3
1

■ TYPICAL RDS(on) = 1.56 Ω TO-220 TO-220FP

■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING 3
2
3
1 1
REPEATIBILITY TO-247
D2PAK

DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip- INTERNAL SCHEMATIC DIAGRAM
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES,

ADAPTORS AND PFC

■ LIGHTING

ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP6NK90Z P6NK90Z TO-220 TUBE
STP6NK90ZFP P6NK90ZFP TO-220FP TUBE

STB6NK90ZT4 B6NK90Z D2PAK TAPE & REEL

STW7NK90Z W7NK90Z TO-247 TUBE

November 2003 1/13

STP6NK90Z - STP6NK90ZFP - STB6NK90Z - STW7NK90Z

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
TO-220/D2PAK/TO247 TO220FP
VDS Drain-source Voltage (VGS = 0) 900 V
VDGR Drain-gate Voltage (RGS = 20 kΩ) 900 V
VGS Gate- source Voltage ± 30 V
ID Drain Current (continuous) at TC = 25°C 5.8 5.8 (*) A
ID Drain Current (continuous) at TC = 100°C 3.65 3.65 (*) A
IDM (
) Drain Current (pulsed) 23.2 23.2 (*) A
PTOT Total Dissipation at TC = 25°C 140 30 W
Derating Factor 1.12 0.24 W/°C
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ) 4000 V
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
Viso Insulation Withstand Voltage (DC) -- 2500 V
Tj Operating Junction Temperature -55 to 150 °C
Tstg Storage Temperature
(
) Pulse width limited by safe operating area
(1) ISD ≤ 5.8A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed

THERMAL DATA
TO-220 D2PAK TO-220FP TO-247 Unit
Rthj-case Thermal Resistance Junction-case Max 0.89 4.2 0.89 °C/W
Rthj-pcb Thermal Resistance Junction-pcb Max 60 °C/W
(When mounted on minimum Footprint)
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 50 °C/W
Tl Maximum Lead Temperature For Soldering 300 °C
Purpose

AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive 5.8 A
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy 300 mJ
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

GATE-SOURCE ZENER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit
BVGSO Gate-Source Breakdown Igs=± 1mA (Open Drain) 30 V
Voltage

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.

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 STP6NK90Z - STP6NK90ZFP - STB6NK90Z - STW7NK90Z

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source ID = 1mA, VGS = 0 900 V
Breakdown Voltage
IDSS Zero Gate Voltage VDS = Max Rating 1 µA
Drain Current (VGS = 0) VDS = Max Rating, TC = 125 °C 50 µA
IGSS Gate-body Leakage VGS = ± 20V ±10 µA
Current (VDS = 0)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 100µA 3 3.75 4.5 V
RDS(on) Static Drain-source On VGS = 10V, ID = 2.9 A 1.56 2 Ω
Resistance

DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (1) Forward Transconductance VDS =15V, ID = 2.9 A 5 S
Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 1350 pF
Coss Output Capacitance 130 pF
Crss Reverse Transfer 26 pF
Capacitance
Coss eq. (3) Equivalent Output VGS = 0V, VDS = 0V to 720V 70 pF
Capacitance
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on) Turn-on Delay Time VDD = 450 V, ID = 3 A 17 ns
tr Rise Time RG = 4.7Ω ,VGS = 10 V 20 ns
(Resistive Load see, Figure 3)
Qg Total Gate Charge VDD = 720 V, ID = 5.8 A, 46.5 60.5 nC
Qgs Gate-Source Charge VGS = 10V 8.5 nC
Qgd Gate-Drain Charge 25 nC

SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(off) Turn-off Delay Time VDD = 450 V, ID = 3 A 45 ns
tf Fall Time RG = 4.7Ω , VGS = 10 V 20 ns
(Resistive Load see, Figure 3)
tr(Voff) Off-voltage Rise Time VDD = 720V, ID = 5.8 A, 11 ns
tf Fall Time RG = 4.7Ω , VGS = 10V 12 ns
tc Cross-over Time (Inductive Load see, Figure 5) 20 ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD Source-drain Current 5.8 A
ISDM (2) Source-drain Current (pulsed) 23.2 A
VSD (1) Forward On Voltage ISD = 5.8 A, VGS = 0 1.6 V
trr Reverse Recovery Time ISD = 5.8 A, di/dt = 100A/µs 840 ns
Qrr Reverse Recovery Charge VDD = 36V, Tj = 150°C 5880 nC
IRRM Reverse Recovery Current (see test circuit, Figure 5) 14 A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.

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STP6NK90Z - STP6NK90ZFP - STB6NK90Z - STW7NK90Z

Safe Operating Area For TO-220/D2PAK Thermal Impedance For TO-220/D2PAK

Safe Operating Area For TO-220FP Thermal Impedance For TO-220FP

Safe Operating Area For TO-247 Thermal Impedance For TO-247

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 STP6NK90Z - STP6NK90ZFP - STB6NK90Z - STW7NK90Z

Output Characteristics Transfer Characteristics

Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage Capacitance Variations

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STP6NK90Z - STP6NK90ZFP - STB6NK90Z - STW7NK90Z

Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature

Source-drain Diode Forward Characteristics Normalized BVDSS vs Temperature

Maximum Avalanche Energy vs Temperature

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 STP6NK90Z - STP6NK90ZFP - STB6NK90Z - STW7NK90Z

Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuit For Fig. 4: Gate Charge test Circuit
Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

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STP6NK90Z - STP6NK90ZFP - STB6NK90Z - STW7NK90Z

TO-220 MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
øP 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116

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 STP6NK90Z - STP6NK90ZFP - STB6NK90Z - STW7NK90Z

TO-220FP MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.5 0.045 0.067
F2 1.15 1.5 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126

E
A

D
B

L3
L6
L7
F1

¯
F

G1

G
H

F2

1 2 3
L5
L2 L4

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STP6NK90Z - STP6NK90ZFP - STB6NK90Z - STW7NK90Z

D2PAK MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

A1 2.49 2.69 0.098 0.106

A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.027 0.036

B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368

D1 8 0.315

E 10 10.4 0.393

E1 8.5 0.334

G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.625

L2 1.27 1.4 0.050 0.055

L3 1.4 1.75 0.055 0.068

M 2.4 3.2 0.094 0.126

R 0.4 0.015

V2 0º 4º
3

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1
 STP6NK90Z - STP6NK90ZFP - STB6NK90Z - STW7NK90Z
2
D PAK FOOTPRINT TUBE SHIPMENT (no suffix)*

TAPE AND REEL SHIPMENT (suffix ”T4”)*

REEL MECHANICAL DATA

mm inch
DIM.
MIN. MAX. MIN. MAX.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197

BASE QTY BULK QTY

TAPE MECHANICAL DATA
1000 1000
mm inch
DIM.
MIN. MAX. MIN. MAX.
A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073
F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082
R 50 1.574
T 0.25 0.35 0.0098 0.0137
W 23.7 24.3 0.933 0.956
* on sales type
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STP6NK90Z - STP6NK90ZFP - STB6NK90Z - STW7NK90Z

TO-247 MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.85 5.15 0.19 0.20
A1 2.20 2.60 0.086 0.102
b 1.0 1.40 0.039 0.055
b1 2.0 2.40 0.079 0.094
b2 3.0 3.40 0.118 0.134
c 0.40 0.80 0.015 0.03
D 19.85 20.15 0.781 0.793
E 15.45 15.75 0.608 0.620
e 5.45 0.214
L 14.20 14.80 0.560 0.582
L1 3.70 4.30 0.14 0.17
L2 18.50 0.728
øP 3.55 3.65 0.140 0.143
øR 4.50 5.50 0.177 0.216
S 5.50 0.216

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 STP6NK90Z - STP6NK90ZFP - STB6NK90Z - STW7NK90Z

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consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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