STB75NF75

STP75NF75 STP75NF75FP
N-CHANNEL 75V - 0.0095 Ω - 80A TO-220/TO-220FP/D²PAK
STripFET™ II POWER MOSFET

TYPE VDSS RDS(on) ID

STB75NF75 75 V <0.011 Ω 80 A
STP75NF75 75 V <0.011 Ω 80 A
STP75NF75FP 75 V <0.011 Ω 80 A(*)
■ TYPICAL RDS(on) = 0.0095 Ω 3
3 1
■ EXCEPTIONAL dv/dt CAPABILITY 1
2

■ 100% AVALANCHE TESTED D2PAK

TO-220FP
■ SURFACE-MOUNTING D2PAK (TO-263) TO-263
POWER PACKAGE IN TAPE & REEL (Suffix “T4”)
(SUFFIX “T4”)
3
2
1
DESCRIPTION
This MOSFET series realized with STMicroelectronics TO-220
unique STripFET™ process has specifically been de-
signed to minimize input capacitance and gate charge. It
is therefore suitable as primary switch in advanced high- INTERNAL SCHEMATIC DIAGRAM
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended for
any applications with low gate drive requirements.

APPLICATIONS
■ SOLENOID AND RELAY DRIVERS

■ DC MOTOR CONTROL

■ DC-DC CONVERTERS

■ AUTOMOTIVE ENVIRONMENT

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
STB75NF75
STP75NF75FP
STP75NF75
VDS Drain-source Voltage (VGS = 0) 75 V
VDGR Drain-gate Voltage (RGS = 20 kΩ) 75 V
VGS Gate- source Voltage ± 20 V
ID Drain Current (continuous) at TC = 25°C 80 80(*) A
ID Drain Current (continuous) at TC = 100°C 70 70(*) A
IDM(•) Drain Current (pulsed) 320 320(*) A
Ptot Total Dissipation at TC = 25°C 300 45 W
Derating Factor 2.0 0.3 W/°C
dv/dt (1) Peak Diode Recovery voltage slope 12 V/ns
EAS (2) Single Pulse Avalanche Energy 700 mJ
VISO Insulation Withstand Voltage (DC) ------ 2000 V
Tstg Storage Temperature
-55 to 175 °C
Tj Operating Junction Temperature
(•) Pulse width limited by safe operating area. (1) ISD ≤80A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(*) Refer to SOA for the max allowable current values on FP-type (2) Starting T j = 25 oC, ID = 40A, VDD= 37.5V
due to Rth value

June 2003 1/11

NEW DATASHEET ACCORDING TO PCN DSG20023123 MARKING: P75NF75 @
STB75NF75 STP75NF75 STP75NF75FP

THERMAL DATA
D2PAK
TO-220FP
TO-220
Rthj-case Thermal Resistance Junction-case Max 0.5 3.33 °C/W

Rthj-amb Thermal Resistance Junction-ambient 62.5 °C/W

Max
Tl Maximum Lead Temperature For Soldering Purpose 300 °C
( 1.6 mm from case, for 10 sec.)

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Drain-source ID = 250 µA, VGS = 0
V(BR)DSS 75 V
Breakdown Voltage

IDSS Zero Gate Voltage VDS = Max Rating 1 µA

Drain Current (VGS = 0) VDS = Max Rating TC = 125°C 10 µA

Gate-body Leakage VGS = ± 20 V ±100 nA

IGSS
Current (VDS = 0)

ON (*)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA 2 3 4 V

RDS(on) Static Drain-source On VGS = 10 V ID = 40 A 0.0095 0.011 Ω

Resistance

DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit

gfs (*) Forward Transconductance VDS = 15 V ID = 40 A 20 S

Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 3700 pF

Coss Output Capacitance 730 pF
Crss Reverse Transfer 240 pF
Capacitance

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 STB75NF75 STP75NF75 STP75NF75FP

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit

td(on) Turn-on Delay Time VDD = 37.5 V ID = 45 A 25 ns

tr Rise Time RG = 4.7 Ω VGS = 10 V 25 ns
(Resistive Load, Figure 3)
Qg Total Gate Charge VDD= 60 V ID= 80 A VGS= 10V 117 160 nC
Qgs Gate-Source Charge 27 nC
Qgd Gate-Drain Charge 47 nC

SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit

td(off) Turn-off Delay Time VDD = 37.5 V ID = 45 A 66 ns

tf Fall Time RG = 4.7 Ω VGS = 10 V 30 ns
(Resistive Load, Figure 3)

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD Source-drain Current 80 A
ISDM (•) Source-drain Current (pulsed) 320 A

VSD (*) Forward On Voltage ISD = 80 A VGS = 0 1.5 V

trr Reverse Recovery Time ISD = 80 A di/dt = 100A/µs 132 ns

Qrr Reverse Recovery Charge VDD = 25 V Tj = 150°C 660 nC
IRRM Reverse Recovery Current (see test circuit, Figure 5) 10 A
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.

Safe Operating Area Safe Operating Area for TO-220FP

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STB75NF75 STP75NF75 STP75NF75FP

Thermal Impedance Thermal Impedance for TO-220FP

Output Characteristics Transfer Characteristics

Transconductance Static Drain-source On Resistance

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 STB75NF75 STP75NF75 STP75NF75FP

Gate Charge vs Gate-source Voltage Capacitance Variations

Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature

Source-drain Diode Forward Characteristics Normalized Breakdown Voltage Temperature

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STB75NF75 STP75NF75 STP75NF75FP

Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuits For Resistive Fig. 4: Gate Charge test Circuit
Load

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

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 STB75NF75 STP75NF75 STP75NF75FP

D2PAK MECHANICAL DATA

mm. inch.
DIM.
MIN. TYP. MAX. MIN. TYP. TYP.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
B 0.7 0.93 0.028 0.037
B2 1.14 1.7 0.045 0.067
C 0.45 0.6 0.018 0.024
C2 1.21 1.36 0.048 0.054
D 8.95 9.35 0.352 0.368
D1 8 0.315
E 10 10.4 0.394 0.409
E1 8.5 0.334
G 4.88 5.28 0.192 0.208
L 15 15.85 0.591 0.624
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.069
M 2.4 3.2 0.094 0.126
R 0.4 0.016
V2 0° 8° 0° 8°

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STB75NF75 STP75NF75 STP75NF75FP

TO-220 MECHANICAL DATA

mm. inch.
DIM.
MIN. TYP. MAX. MIN. TYP. TYP.
A 4.4 4.6 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.40 2.70 0.094 0.106
H2 10 10.40 0.393 0.409
L2 16.40 0.645
L3 28.90 1.137
L4 13 14 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.260
L9 3.50 3.93 0.137 0.154
DIA 3.75 3.85 0.147 0.151

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 STB75NF75 STP75NF75 STP75NF75FP

TO-220FP MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126

E
A

D
B

L3
L6
L7
F1

¯
G1

G
H

F2

1 2 3
L2 L4

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STB75NF75 STP75NF75 STP75NF75FP

D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)*

TAPE AND REEL SHIPMENT (suffix ”T4”)*

REEL MECHANICAL DATA
mm inch
DIM.
MIN. MAX. MIN. MAX.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197

BASE QTY BULK QTY

1000 1000
TAPE MECHANICAL DATA
mm inch
DIM.
MIN. MAX. MIN. MAX.
A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073
F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0075 0.082
R 50 1.574
T 0.25 0.35 .0.0098 0.0137
W 23.7 24.3 0.933 0.956

* on sales type
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 STB75NF75 STP75NF75 STP75NF75FP

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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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