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    2 Sa 93

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    GONSALOBR SOUZA
    This document provides information about a TO-92 plastic-encapsulated PNP transistor. It lists the transistor's key electrical characteristics including a maximum power dissipation of 0.625W, collector current of -0.5A, and operating junction temperature range of -55°C to +150°C. It also provides details on minimum and maximum parameters for electrical properties like breakdown voltages and current gains. Finally, it includes the transistor's package outline dimensions.

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    2 Sa 93

    Uploaded by

    GONSALOBR SOUZA
    106 views3 pages
    This document provides information about a TO-92 plastic-encapsulated PNP transistor. It lists the transistor's key electrical characteristics including a maximum power dissipation of 0.625W, collector current of -0.5A, and operating junction temperature range of -55°C to +150°C. It also provides details on minimum and maximum parameters for electrical properties like breakdown voltages and current gains. Finally, it includes the transistor's package outline dimensions.

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    This document provides information about a TO-92 plastic-encapsulated PNP transistor. It lists the transistor's key electrical characteristics including a maximum power dissipation of 0.625W, collector current of -0.5A, and operating junction temperature range of -55°C to +150°C. It also provides details on minimum and maximum parameters for electrical properties like breakdown voltages and current gains. Finally, it includes the transistor's package outline dimensions.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    106 views3 pages

    2 Sa 93

    Uploaded by

    GONSALOBR SOUZA
    This document provides information about a TO-92 plastic-encapsulated PNP transistor. It lists the transistor's key electrical characteristics including a maximum power dissipation of 0.625W, collector current of -0.5A, and operating junction temperature range of -55°C to +150°C. It also provides details on minimum and maximum parameters for electrical properties like breakdown voltages and current gains. Finally, it includes the transistor's package outline dimensions.

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    JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.

    , LTD

    TO-92 Plastic-Encapsulate Transistors

    A92 TRANSISTOR（ PNP ） TO—92


    FEATURES

    Power dissipation
    PCM : 0.625W（Tamb=25℃） 1.EMITTER

    Collector current 2.BASE


    ICM: -0.5 A
    Collector-base voltage 3.COLLECTOR

    1 2 3
    V(BR)CBO : -300V
    Operating and storage junction temperature range
    T J ，T stg: -55℃ to +150℃
    ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
    Parameter Symbol Test conditions MIN TYP MAX UNIT

    Collector-base breakdown voltage V(BR)CBO Ic= -100μA，IE=0 -300 V

    Collector-emitter breakdown voltage V(BR)CEO Ic= -1 mA， IB=0 -300 V

    Emitter-base breakdown voltage V(BR)EBO IE= -100μA， IC=0 -5 V

    Collector cut-off current ICBO VCB= -200 V IE=0 -0.25 μA

    Emitter cut-off current IEBO VEB= -5 V， IC=0 -0.1 μA

    hFE（1） VCE= -10 V, IC=- 1 mA 60

    DC current gain hFE（2） VCE= -10V, IC = -10 mA 80 250

    hFE（3） VCE= -10 V, IC= -80 mA 60

    Collector-emitter saturation voltage VCE(sat) IC= -20 mA, IB= -2 mA -0.2 V

    Base-emitter saturation voltage VBE(sat) IC= -20 mA, IB= -2 mA -0.9 V

    VCE= -20 V, IC= -10 mA


    Transition frequency fT 50 MHz
    f = 30MHz

    CLASSIFICATION OF h FE(2)
    Rank A B1 B2 C

    Range 80-100 100-150 150-200 200-250


    TO-92 PACKAGE OUTLINE DIMENSIONS

    D D1

    A1
    A

    C
    E

    b
    φ
    L

    e
    e1

    Dimensions In Millimeters Dimensions In Inches


    Symbol
    Min Max Min Max
    A 3.300 3.700 0.130 0.146
    A1 1.100 1.400 0.043 0.055
    b 0.380 0.550 0.015 0.022
    c 0.360 0.510 0.014 0.020
    D 4.400 4.700 0.173 0.185
    D1 3.430 0.135
    E 4.300 4.700 0.169 0.185
    e 1.270TYP 0.050TYP
    e1 2.440 2.640 0.096 0.104
    L 14.100 14.500 0.555 0.571

    Ö 1.600 0.063
    0.000 0.380 0.000 0.015

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