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    PNP General Purpose Transistors: Absolute Maximum Ratings (Ta 25 C)

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    llargo007
    This document provides specifications for a PNP general purpose transistor in a TO-92 package. It includes maximum ratings, electrical characteristics, and outline dimensions. The transistor has a DC current gain ranging from 60 to 1000 and a transition frequency of at least 150 MHz. It can withstand collector-emitter voltages up to -45V and dissipate up to 0.4W.

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    PNP General Purpose Transistors: Absolute Maximum Ratings (Ta 25 C)

    Uploaded by

    llargo007
    77 views4 pages
    This document provides specifications for a PNP general purpose transistor in a TO-92 package. It includes maximum ratings, electrical characteristics, and outline dimensions. The transistor has a DC current gain ranging from 60 to 1000 and a transition frequency of at least 150 MHz. It can withstand collector-emitter voltages up to -45V and dissipate up to 0.4W.

    Original Title

    S9015

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    This document provides specifications for a PNP general purpose transistor in a TO-92 package. It includes maximum ratings, electrical characteristics, and outline dimensions. The transistor has a DC current gain ranging from 60 to 1000 and a transition frequency of at least 150 MHz. It can withstand collector-emitter voltages up to -45V and dissipate up to 0.4W.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    77 views4 pages

    PNP General Purpose Transistors: Absolute Maximum Ratings (Ta 25 C)

    Uploaded by

    llargo007
    This document provides specifications for a PNP general purpose transistor in a TO-92 package. It includes maximum ratings, electrical characteristics, and outline dimensions. The transistor has a DC current gain ranging from 60 to 1000 and a transition frequency of at least 150 MHz. It can withstand collector-emitter voltages up to -45V and dissipate up to 0.4W.

    Copyright:

    © All Rights Reserved
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    S9015

    PNP General Purpose Transistors


    TO-92

    1. EMITTER 1
    2. BASE 2
    3
    3. COLLECTOR

    ABSOLUTE MAXIMUM RATINGS (Ta=25 C)

    Rating Symbol Value Unit


    Collector-Emitter Voltage VCEO -45 Vdc
    Collector-Base Voltage VCBO -50 Vdc
    Emitter-Base Voltage VEBO -5.0 Vdc
    Collector Current IC 100 mAdc
    Total Device Dissipation TA=25 C PD 0.4 W
    Junction Temperature Tj 150 C
    Storage, Temperature Tstg -55 to +150 C

    ELECTRICAL CHARACTERISTICS

    Characteristics Symbol Min Max Unit


    Collector-Emitter Breakdown Voltage (IC= -1 mAdc, IB=0) V(BR)CEO -45 - Vdc

    Collector-Base Breakdown Voltage (IC= -100uAdc, IE=0) V(BR)CBO -50 - Vdc

    Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0) V(BR)EBO -5.0 - Vdc

    Collector Cutoff Current (VCB= -50 Vdc, IE=0) ICBO - -0.05 uAdc

    Emitter Cutoff Current (VEB= -5.0Vd c, IC =0) IEBO - -0.05 uAdc

    WEITRON
    http://www.weitron.com.tw
    S9015 WEITRON
    Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued)
    Characteristics Symbol Min Max Unit

    On Characteristics

    DC Current Gain
    (IC= -1mAdc, VCE=-5Vdc) HFE 60 1000 -

    Collector-Emitter Saturation Voltage


    VCE(sat) - -0.3 Vdc
    (IC= -100 mAdc, IB= -10 mAdc)

    Base-Emitter Saturation Voltage


    VBE(sat) - -1 Vdc
    (IC= -100 mAdc, IB= -10mAdc)

    Transition Frequency
    fT 150 - MHz
    (IC= -10 mAdc, VCE= -5 Vdc, f=30MHz)

    CLASSIFICATION OF hFE

    Rank A B C D
    Range 60-150 100-300 200-600 400-1000

    WEITRON
    http://www.weitron.com.tw
    S9015 WEITRON

    FIG.1 FIG.2

    FIG.3 FIG.4

    FIG.5 FIG.6

    WEITRON
    http://www.weitron.com.tw
    S9015

    TO-92 Outline Dimensions unit:mm

    TO-92
    H

    Dim Min Max


    C A 3.30 3.70
    B 1.10 1.40
    C 0.38 0.55
    D 0.36 0.51
    L

    E 4.40 4.70
    G 3.43 -
    H 4.30 4.70
    J
    J 1.270TYP
    K
    K 2.44 2.64
    G
    L 14.10 14.50
    B
    A
    D

    WEITRON
    http://www.weitron.com.tw

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