TIP110, TIP115

Darlington Transistors
Features:
Designed for general-purpose amplifier and low speed switching applications.
• Collector-emitter sustaining voltage-VCEO (sus) = 60V (Minimum) - TIP110, TIP115.
• Collector-emitter saturation voltage-VCE (sat) = 2.5V (Maximum) at IC = 2.0A.
• Monolithic construction with built-in-base-emitter shunt resistor.

Dimension Minimum Maximum

A 14.68 15.31 NPN PNP
TIP110 TIP115
B 9.78 10.42
C 5.01 6.52
2.0 Ampere
D 13.06 14.62 Darlington
E 3.57 4.07 Complementary Silicon
F 2.42 3.66 Power Transistors
G 1.12 1.36 60 Volts
50 Watts
H 0.72 0.96
I 4.22 4.98
Pin 1. Base
J 1.14 1.38
2. Collector
K 2.20 2.97
3. Emitter
L 0.33 0.55
4. Collector (Case) TO-220
M 2.48 2.98
O 3.70 3.90
Dimensions : Millimetres
Maximum Ratings
TIP110
Characteristic Symbol Unit
TIP115
Collector-Emitter Voltage VCEO
60
Collector-Base Voltage VCBO V
Emitter-Base Voltage VEBO 5.0
Collector Current-Continuous IC 2.0
A
Peak ICM 4.0
Base Current IB 50 mA
Total Power Dissipation at TC = 25°C 50 W
PD
Derate above 25°C 0.4 W/°C
Operating and Storage Junction TJ, TSTG -65 to +150 °C
Temperature Range
Thermal Characteristics
Characteristic Symbol Maximum Unit
Thermal Resistance Junction to Case Rθjc 2.5 °C/W

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 TIP110, TIP115
Darlington Transistors
Figure - 1 Power Derating
PD, Power Dissipation (Watts)

TC, Temperature (°C)

Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic Symbol Minimum Maximum Unit

OFF Characteristics
Collector-Emitter Sustaining Voltage (1)
VCEO (sus) - V
(IC = 30mA, IB = 0) TIP110, TIP115 60
Collector Cut off Current
ICEO - 2.0
(VCE = 30V, IB = 0) TIP110, TIP115
Collector Cut off Current
ICBO - 1.0 mA
(VCB = 60V, IE = 0) TIP110, TIP115
Emitter Cut off Current
IEBO - 2.0
(VEB =5.0V, IC = 0)
ON Characteristics (1)
DC Current Gain
(IC = 1.0A, VCE = 4.0V) hFE 1000 - -
(IC = 2.0A, VCE = 4.0V) 500

Collector-Emitter Saturation Voltage

VCE (sat) - 2.5
(IC = 2.0A, IB = 8.0mA)
V
Base-Emitter On Voltage
VBE (on) - 2.8
(IC = 2.0A, VCE = 4.0V)
Dynamic Characteristics
Small-Signal Current Gain
hfe 25 - -
(IC = 0.75A, VCE = 10V, f = 1.0MHz)

Output Capacitance
Cob
(VCB = 10V, IE = 0, f = 0.1MHz) TIP110 - 250 pF
TIP115 150

(1) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2.0%.

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 TIP110, TIP115
Darlington Transistors
Internal Schematic Diagram

NPN PNP
TIP110 TIP115

Figure - 2 Switching Time Figure - 3 Switching Time

t, Time (µs)
t, Time (µs)

IC, Collector Current (AMP) IC, Collector Current (AMP)

Figure - 4 Capacitances Figure - 5 Active Region Safe Operating Area

IC, Collector Current (AMP)
C, Capacitance (pF)

VR, Reverse Voltage (Volts) VCE, Collector Emitter Voltage (Volts)

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 TIP110, TIP115
Darlington Transistors
Figure - 6 Active Region Safe Operating Area
There are two limitation on the power handling ability of a
transistor: average junction temperature and second breakdown safe
IC, Collector Current (AMP)

operating area curves indicate Ic-VCE limits of the transistor that

must be observed for reliable operation i.e., the transistor must not
be subjected to greater dissipation than the curves indicate.
The data of Figure - 5 and 6 is base on TJ (PK) = 150°C; Tc is
variable depending on power level. Second breakdown pulse limits
are valid for duty cycles to 10% provided TJ (PK) ≤150°C, At high
case temperatures, thermal limitation will reduce the power that can
be handled to values less than the limitations imposed by second
breakdown.

VCE, Collector Emitter Voltage (Volts)

Specifications
IC (av) VCEO hFE Ptot
maximum maximum minimum at 25°C Package Type Part Number
(A) V at Ic = 1A (W)
NPN TIP110
2 60 1000 50 TO-220
PNP TIP115

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 TIP110, TIP115
Darlington Transistors
Notes:

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