MJE15030, 15031

Complementary Power Transistors

Designed for use in high-frequency drivers in audio amplifier applications.

Features:
• Collector-Emitter sustaining voltage-
VCEO(sus) = 150V (Minimum) - MJE15030, MJE15031.
• DC current gain specified to 8.0 Amperes
hFE = 20 (Minimum) at IC = 4.0A.
• TO-220AB compact package.

NPN PNP
Dimensions Minimum Maximum
MJE15030 MJE15031
A 14.68 15.31
B 9.78 10.42 8.0 Ampere
Complementary Silicon
C 5.01 6.52
Power Transistors
D 13.06 14.62 150 Volts
E 3.57 4.07 50 Watts
F 2.42 3.66
G 1.12 1.36
H 0.72 0.96
I 4.22 4.98
J 1.14 1.38
Pin 1. Base
K 2.20 2.97 TO-220
2. Collector
3. Emitter L 0.33 0.55
4. Collector(Case). M 2.48 2.98
O 3.70 3.90
Dimensions : Millimetres

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 MJE15030,15031
Complementary Power Transistors
Maximum Ratings

Parameter Symbol Rating Unit

Collector-Emitter Voltage VCEO

150
Collector-Base Voltage VCBO V

Emitter-Base Voltage VEBO 5.0

Collector Current-Continuous IC 8.0

-Peak 16
A

Base Current IB 2.0

Total Power Dissipation at TC = 25°C 50 W

PD
Derate above 25°C 0.4 W/°C

Operating and Storage Junction Temperature Range TJ, TSTG -65 to +150 °C

Thermal Characteristic

Characteristic Symbol Maximum Unit

Thermal Resistance Junction to Case Rθjc 2.50 °C/W

Figure - 1 Power Derating

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Complementary Power Transistors
Electrical Characteristics (TC = 25°C unless otherwise noted)

Parameter Symbol Minimum Maximum Unit

Off Characteristics

Collector-Emitter Sustaining Voltage (1)

(IC = 10mA, IB = 0) VCEO(sus) 150
- V

Collector Cut off Current

(VCE = 150V, IB = 0) ICEO - mA
0.1

Collector Cut off Current

(VCB = 150V, IE = 0)
ICBO -
10 µA

Emitter Cut off Current

(VEB = 5.0V, IC = 0)
IEBO -

On Characteristics (1)

DC Current Gain
(IC = 0.1A, VCE = 2.0V) 40
(IC = 2.0A, VCE = 2.0V) hFE 40
- -
(IC = 3.0A, VCE = 2.0V) 40
(IC = 4.0A, VCE = 2.0V) 20

Collector-Emitter Saturation Voltage

(IC = 1.0A, IB = 0.1A)
VCE(sat) - 0.5
V
Base-Emitter On Voltage
(IC = 1.0A, VCE = 2.0V)
VBE(on) - 1.0

Dynamic Characteristics

Current Gain-Bandwidth Product (2)

(IC = 0.5A, VCE = 10V, f = 1.0MHz) fT 30 - MHz

(1) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2.0%.

(2) fT = hFE • ftest.

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Complementary Power Transistors
Figure - 2 Active Region Safe Operating Area

There are two limitations on the power handling ability of a transistor:

average junction temperature and second breakdown safe operating
area curves indicate IC-VCE limits of the transistor that must be
observed for reliable operation i.e., the transistor must not be
subjected to greater dissipation than the curves indicate.
The data of Figure - 2 and Figure - 3 is based on TJ(PK) = 150°C; TC is
variable depending on conditions. Second breakdown pulse limits are
valid for duty cycles to 10% provided TJ(PK) ≤150°C. At high case
temperatures, thermal limitation will reduce the power that can be
handled to values less than the limitations imposed by second
breakdown.

Figure - 3 Reverse Bias Safe Operating Area Figure - 4 Capacitances

Figure - 5 Small Signal Current Gain Figure - 6 Current Gain-Bandwidth Product

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MJE15030,15031
Complementary Power Transistors
Figure - 7 DC Current Gain

NPN MJE15030 PNP MJE15031

Figure - 8 “ON” Voltage

NPN MJE15030 PNP MJE15031

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 MJE15030,15031
Complementary Power Transistors
Figure - 9 Turn-On Time Figure - 10 Turn-Off Time

Specifications
IC(av) VCEO hFE
Ptot at 25°C
maximum maximum minimum at Package Type Part Number
IC = 4A (W)
(A) (V)

NPN MJE15030
8 150 20 50 TO-220
PNP MJE15031

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Complementary Power Transistors
Notes:

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