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    2n5551 Datasheet

    Uploaded by

    farkli88
    This document provides specifications for a bipolar transistor, including: - Maximum ratings for voltages, currents, and temperatures. Collector-base voltage is rated up to 180V. - Electrical characteristics like current gain (hFE) of 30-250, saturation voltage (VCE(sat)) of 0.15-0.2V, and breakdown voltages above 160V. - Package information for a TO-92 package with emitter, base, and collector pins and dimensions of 4.32-5.33mm by 4.45-5.2mm.

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    © All Rights Reserved
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    2n5551 Datasheet

    Uploaded by

    farkli88
    23 views3 pages
    This document provides specifications for a bipolar transistor, including: - Maximum ratings for voltages, currents, and temperatures. Collector-base voltage is rated up to 180V. - Electrical characteristics like current gain (hFE) of 30-250, saturation voltage (VCE(sat)) of 0.15-0.2V, and breakdown voltages above 160V. - Package information for a TO-92 package with emitter, base, and collector pins and dimensions of 4.32-5.33mm by 4.45-5.2mm.

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    2n5551-datasheet

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    This document provides specifications for a bipolar transistor, including: - Maximum ratings for voltages, currents, and temperatures. Collector-base voltage is rated up to 180V. - Electrical characteristics like current gain (hFE) of 30-250, saturation voltage (VCE(sat)) of 0.15-0.2V, and breakdown voltages above 160V. - Package information for a TO-92 package with emitter, base, and collector pins and dimensions of 4.32-5.33mm by 4.45-5.2mm.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    23 views3 pages

    2n5551 Datasheet

    Uploaded by

    farkli88
    This document provides specifications for a bipolar transistor, including: - Maximum ratings for voltages, currents, and temperatures. Collector-base voltage is rated up to 180V. - Electrical characteristics like current gain (hFE) of 30-250, saturation voltage (VCE(sat)) of 0.15-0.2V, and breakdown voltages above 160V. - Package information for a TO-92 package with emitter, base, and collector pins and dimensions of 4.32-5.33mm by 4.45-5.2mm.

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    © All Rights Reserved
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    Bipolar Transistor

    Maximum Ratings:
    Characteristic Symbol Rating Unit
    Collector - Base Voltage VCBO 180
    Collector - Emitter Voltage VCEO 160 V
    Emitter - Base Voltage VEBO 6
    Continuous Collector Current IC 600 A
    Total Device Dissipation (TA = +25°C), 625 mW
    Derate above 25°C PD 5 mW/°C
    Total Device Dissipation(TC = +25°C), 1.5 W
    Derate above 25°C 12 mW/°C
    Operating Junction Temperature, Range TJ
    -55 to +150 °C
    Storage Temperature Range Tstg
    Thermal Resistance, Junction-to-Case 83.3
    RthJC °C/W
    Thermal Resistance, Junction-to-Ambient (Note-1) 200
    Note:
    1. RthJA is measured with the device soldered into a typical printed circuit board.

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    Page <1> 18/01/16 V1.1


    Bipolar Transistor

    Electrical Characteristics: (TA = +25°C Unless otherwise specified)


    Parameter Symbol Test Conditions Min Max Unit

    OFF Characteristics
    Collector - Base Breakdown Voltage V(BR)CBO lC = 100µA, IE = 0 180
    Collector - Emitter Breakdown Voltage V(BR)CEO lC = 1mA, IB = 0, Note 2 160 - V
    Emitter - Base Breakdown Voltage V(BR)EBO lE = 10µA, IC = 0 6
    VCB = 120V, IE = 0 nA
    Collector Cut - Off Current ICBO
    VCB = 120V, IE = 0, TA = +100°C - 50 uA
    Emitter Cut - Off Voltage IEBO VEB = 4V, IC = 0 nA

    ON Characteristics (Note 2)
    VCE = 5V, lC = 1mA -
    80
    DC Current Gain hFE VCE = 5V, lC = 10mA 250 -
    VCE = 5V, lC = 50mA 30 -
    lC = 10mA, IB = 1mA 0.15
    Collector - Emitter Saturation Voltage VCE(sat)
    lC = 50mA, IB = 5mA 0.2
    - V
    lC = 10mA, IB = 1mA
    Base - Emitter On Voltage VBE(sat) 1
    lC = 50mA, IB = 5mA

    Small-Signal Characteristics
    Current Gain Bandwidth Product fT VCE = 10V, lC = 10mA, f = 100MHz 100 300 MHz
    Output Capacitance Cobo VCB = 10V, lE = 0, f = 1MHz 6
    - pF
    Input Capacitance Cibo VBE = 0.5V, lC = 0, f = 1MHz 20
    Small-Signal Current Gain hfe VCE = 10V, lC = 1mA, f = 1kHz 50 200 -
    Noise Figure NF VCE = 5V, lC = 250µA, f = 1kHz, RS = 1kΩ - 8 dB

    Note:
    2. Pulse Test : Pulse Width = 300µs, Duty Cycle = 2%

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    Page <2> 18/01/16 V1.1


    Bipolar Transistor

    TO-92

    Bottom View Section A-A

    Pin Configuration:
    1. Emitter
    2. Base
    3. Collector

    Dimensions A B C D E F G H K
    Min. 4.32 4.45 3.18 0.41 0.35 1.14 1.14 12.7
    5°
    Max. 5.33 5.2 4.19 0.55 0.5 1.4 1.53 -

    Dimensions : Millimetres

    Part Number Table


    Description Part Number
    Transistor, NPN, 0.6A, 160V, TO-92 2N5551

    Important Notice : This data sheet and its contents (the “Information”) belong to the members of the Premier Farnell group of companies (the “Group”) or are licensed to it. No licence is granted
    for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change
    without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any
    error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any
    assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the
    Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence.
    Multicomp is the registered trademark of the Group. © Premier Farnell plc 2012.

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    Page <3> 18/01/16 V1.1

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