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    TO-220 Plastic-Encapsulate Transistors

    Uploaded by

    Liver Haro Orellanes
    This document summarizes the key specifications of a TO-220 packaged NPN transistor. It lists the maximum power dissipation as 2W at 25°C, maximum collector current as 8A, and operating junction temperature range from -55°C to +150°C. The document also provides the minimum and maximum ratings for important electrical characteristics like breakdown voltages, current gains, saturation voltages, transition frequency, and more.

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    TO-220 Plastic-Encapsulate Transistors

    Uploaded by

    Liver Haro Orellanes
    57 views1 page
    This document summarizes the key specifications of a TO-220 packaged NPN transistor. It lists the maximum power dissipation as 2W at 25°C, maximum collector current as 8A, and operating junction temperature range from -55°C to +150°C. The document also provides the minimum and maximum ratings for important electrical characteristics like breakdown voltages, current gains, saturation voltages, transition frequency, and more.

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    13007

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    This document summarizes the key specifications of a TO-220 packaged NPN transistor. It lists the maximum power dissipation as 2W at 25°C, maximum collector current as 8A, and operating junction temperature range from -55°C to +150°C. The document also provides the minimum and maximum ratings for important electrical characteristics like breakdown voltages, current gains, saturation voltages, transition frequency, and more.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    57 views1 page

    TO-220 Plastic-Encapsulate Transistors

    Uploaded by

    Liver Haro Orellanes
    This document summarizes the key specifications of a TO-220 packaged NPN transistor. It lists the maximum power dissipation as 2W at 25°C, maximum collector current as 8A, and operating junction temperature range from -55°C to +150°C. The document also provides the minimum and maximum ratings for important electrical characteristics like breakdown voltages, current gains, saturation voltages, transition frequency, and more.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    TO-220 Plastic-Encapsulate Transistors

    3DD13007 TRANSISTOR (NPN)

    FEATURES TO-220
    Power dissipation

    PCM: 2 W (Tamb=25℃)
    1. BASE
    Collector current
    ICM: 8 A 2. COLLECTOR

    Collector-base voltage 3. EMITTER 123


    V(BR)CBO: 700 V
    Operating and storage junction temperature range

    TJ, Tstg: -55℃ to +150℃

    ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

    Parameter Symbol Test conditions MIN TYP MAX UNIT

    Collector-base breakdown voltage V(BR)CBO Ic= 1mA, IE=0 700 V

    Collector-emitter breakdown voltage V(BR)CEO Ic= 10mA, IB=0 400 V

    Emitter-base breakdown voltage V(BR)EBO IE= 1mA, IC=0 9 V

    Collector cut-off current ICBO VCB= 700V, IE=0 1 mA

    Emitter cut-off current IEBO VEB=9V, IC=0 100 µA

    hFE(1) VCE= 5V, IC= 2 A 8 40


    DC current gain
    hFE(2) VCE=5 V, IC=5A 5 30

    Collector-emitter saturation voltage VCE(sat) IC=2A,IB=0.4A 1 V

    Base-emitter saturation voltage VBE(sat) IC=2A, IB= 0.4A 1.2 V

    Ic=500mA,VCE=10V
    Transition frequency fT 4 MHZ
    f=1MHZ

    Collector output capacitance Cob VCE=10,IE=0, f=0.1MHz 80 pF

    Fall time tf Vcc=125V, Ic=5A 0.7 µs

    Storage time ts IB1=-IB2=1A 3 µs

    CLASSIFICATION OF hFE(1)
    Rank

    Range 8-15 15-20 20-25 25-30 30-35 35-40

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