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    S8050LT1 Plastic-Encapsulate Transistors: Features Sot

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    Marco Qs
    This document provides specifications for the S8050LT1 plastic-encapsulated NPN transistor. Key specifications include: 1. Maximum power dissipation of 0.3W at an ambient temperature of 25°C. 2. Maximum collector current of 0.5A. 3. Electrical characteristics including breakdown voltages, current gains, and saturation voltages.

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    S8050LT1 Plastic-Encapsulate Transistors: Features Sot

    Uploaded by

    Marco Qs
    27 views1 page
    This document provides specifications for the S8050LT1 plastic-encapsulated NPN transistor. Key specifications include: 1. Maximum power dissipation of 0.3W at an ambient temperature of 25°C. 2. Maximum collector current of 0.5A. 3. Electrical characteristics including breakdown voltages, current gains, and saturation voltages.

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    datasheet (1)

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    This document provides specifications for the S8050LT1 plastic-encapsulated NPN transistor. Key specifications include: 1. Maximum power dissipation of 0.3W at an ambient temperature of 25°C. 2. Maximum collector current of 0.5A. 3. Electrical characteristics including breakdown voltages, current gains, and saturation voltages.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    27 views1 page

    S8050LT1 Plastic-Encapsulate Transistors: Features Sot

    Uploaded by

    Marco Qs
    This document provides specifications for the S8050LT1 plastic-encapsulated NPN transistor. Key specifications include: 1. Maximum power dissipation of 0.3W at an ambient temperature of 25°C. 2. Maximum collector current of 0.5A. 3. Electrical characteristics including breakdown voltages, current gains, and saturation voltages.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 1

    S8050LT1 PLASTIC-ENCAPSULATE TRANSISTORS

    S8050LT1 TRANSISTOR（ NPN ）


    —23
    SOT—
    FEATURES

    Power dissipation
    PCM : 0.3 W（Tamb=25℃）
    1. BASE
    Collector current
    ICM : 0.5 A 2. EMITTER

    Collector-base voltage
    3. COLLECTOR
    V(BR)CBO : 40 V

    ELECTRICAL （Tamb=25℃
    CHARACTERISTICS（ ℃ ）
    unless otherwise specified）
    Parameter Symbol Test conditions MIN TYP MAX UNIT

    Collector-base breakdown voltage V(BR)CBO Ic= 100μA， IE=0 40 V

    Collector-emitter breakdown voltage V(BR)CEO Ic= 0.1mA， IB=0 25 V

    Emitter-base breakdown voltage V(BR)EBO IE=100μA， IC=0 5 V

    Collector cut-off current ICBO VCB=40 V , IE=0 0.1 μA

    Collector cut-off current ICEO VCB=20V , IE=0 0.1 μA

    Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 μA

    HFE(1) VCE=1V, IC= 50mA 120 350


    DC current gain(note)
    HFE(2) VCE=1V, IC= 500mA 50

    Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB= 50mA 0.6 V

    Base-emitter saturation voltage VCE(sat) IC=500 mA, IB= 50mA 1.2 V

    Base-emitter voltage VBE IE= 100mA 1.4

    VCE=6V, IC= 20mA


    Transition frequency fT 150 MHz
    f=30MHz

    CLASSIFICATION OF HFE(1)
    Rank L H
    Range 100-200 200-350

    DEVICE MARKING : S8050LT1=J3Y

    Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153
    Homepage: http://www.wingshing.com E-mail: wsccltd@hkstar.com

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