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    Tiger Electronic Co.,Ltd: TO-92 Plastic-Encapsulate Transistors

    Uploaded by

    Jimmy Angel Sanchez
    This document provides specifications for the MJE13001 transistor, a plastic-encapsulated NPN transistor in a TO-92 package. Key specifications include maximum ratings for collector-base voltage, collector-emitter voltage, and emitter-base voltage. Electrical characteristics include breakdown voltages, current gains, saturation voltages, transition frequency, fall time, and storage time. The transistor is classified based on its DC current gain range.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Tiger Electronic Co.,Ltd: TO-92 Plastic-Encapsulate Transistors

    Uploaded by

    Jimmy Angel Sanchez
    40 views1 page
    This document provides specifications for the MJE13001 transistor, a plastic-encapsulated NPN transistor in a TO-92 package. Key specifications include maximum ratings for collector-base voltage, collector-emitter voltage, and emitter-base voltage. Electrical characteristics include breakdown voltages, current gains, saturation voltages, transition frequency, fall time, and storage time. The transistor is classified based on its DC current gain range.

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    MJE 13001

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    This document provides specifications for the MJE13001 transistor, a plastic-encapsulated NPN transistor in a TO-92 package. Key specifications include maximum ratings for collector-base voltage, collector-emitter voltage, and emitter-base voltage. Electrical characteristics include breakdown voltages, current gains, saturation voltages, transition frequency, fall time, and storage time. The transistor is classified based on its DC current gain range.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    40 views1 page

    Tiger Electronic Co.,Ltd: TO-92 Plastic-Encapsulate Transistors

    Uploaded by

    Jimmy Angel Sanchez
    This document provides specifications for the MJE13001 transistor, a plastic-encapsulated NPN transistor in a TO-92 package. Key specifications include maximum ratings for collector-base voltage, collector-emitter voltage, and emitter-base voltage. Electrical characteristics include breakdown voltages, current gains, saturation voltages, transition frequency, fall time, and storage time. The transistor is classified based on its DC current gain range.

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    © All Rights Reserved
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    TIGER ELECTRONIC CO.

    ,LTD
    TO-92 Plastic-Encapsulate Transistors

    MJE13001 TRANSISTOR (NPN) TO-92


    FEATURE
    · power switching applications 1. BASE

    MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 2. COLLECTOR

    Symbol Parameter Value Unit


    3. EMITTER
    VCBO Collector -Base Voltage 600 V
    VCEO Collector-Emitter Voltage 400 V
    VEBO Emitter-Base Voltage 7 V
    IC Collector Current -Continuous 0.2 A
    PC Collector Power Dissipation 0.75 W
    TJ Junction Temperature 150 ℃
    Tstg Storage Temperature -55~150 ℃

    ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

    Parameter Symbol Test conditions Min Typ Max Unit

    Collector-base breakdown voltage V(BR)CBO IC= 100μA , IE=0 600 V

    Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 400 V

    Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 7 V

    Collector cut-off current ICBO VCB= 600V , IE=0 100 μA

    Collector cut-off current ICEO VCE= 400V, IB=0 200 μA

    Emitter cut-off current IEBO VEB=7V, IC=0 100 μA

    hFE(1) VCE= 20V, IC= 20mA 10 40


    DC current gain
    hFE(2) VCE= 10V, IC= 0.25 mA 5

    Collector-emitter saturation voltage VCE(sat) IC= 50mA, IB= 10 mA 0.5 V

    Base-emitter saturation voltage VBE(sat) IC= 50 mA, IB= 10mA 1.2 V

    VCE= 20V, IC=20mA


    Transition frequency fT 8 MHz
    f = 1MHz

    Fall time tf 0.3 μs


    IC=50mA, B1=-IB2=5mA,
    VCC=45V
    Storage time tS 1.5 μs

    CLASSIFICATION OF hFE(1)
    Range 10-13 13-16 16-19 19-22 22-25 25-28 28-31 31-34 34-37 37-40

    A,Dec,2010

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