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    Kst5179 NPN Epitaxial Silicon Transistor

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    Leonardo
    This document provides specifications for an NPN epitaxial silicon transistor in an SOT-23 package for use in RF amplifiers. It lists the absolute maximum ratings including voltages, currents, and temperatures. It also lists the electrical characteristics including breakdown voltages, current and gain values, frequencies, and noise figure under specified test conditions. This transistor is suitable for use in RF amplifier applications up to 200MHz as it provides a power gain of 15dB at that frequency.

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    Kst5179 NPN Epitaxial Silicon Transistor

    Uploaded by

    Leonardo
    16 views1 page
    This document provides specifications for an NPN epitaxial silicon transistor in an SOT-23 package for use in RF amplifiers. It lists the absolute maximum ratings including voltages, currents, and temperatures. It also lists the electrical characteristics including breakdown voltages, current and gain values, frequencies, and noise figure under specified test conditions. This transistor is suitable for use in RF amplifier applications up to 200MHz as it provides a power gain of 15dB at that frequency.

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    This document provides specifications for an NPN epitaxial silicon transistor in an SOT-23 package for use in RF amplifiers. It lists the absolute maximum ratings including voltages, currents, and temperatures. It also lists the electrical characteristics including breakdown voltages, current and gain values, frequencies, and noise figure under specified test conditions. This transistor is suitable for use in RF amplifier applications up to 200MHz as it provides a power gain of 15dB at that frequency.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    16 views1 page

    Kst5179 NPN Epitaxial Silicon Transistor

    Uploaded by

    Leonardo
    This document provides specifications for an NPN epitaxial silicon transistor in an SOT-23 package for use in RF amplifiers. It lists the absolute maximum ratings including voltages, currents, and temperatures. It also lists the electrical characteristics including breakdown voltages, current and gain values, frequencies, and noise figure under specified test conditions. This transistor is suitable for use in RF amplifier applications up to 200MHz as it provides a power gain of 15dB at that frequency.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 1

    KST5179 NPN EPITAXIAL SILICON TRANSISTOR

    RF AMPLIFIER TRANSISTOR
    SOT-23

    ABSOLUTE MAXIMUM RATINGS (TA=25 Î)


    Characteristic Symbol Rating Unit

    Collector-Base Voltage VCBO 20 V


    Collector-Emitter Voltage VCEO 12 V
    Emitter-Base Voltage VEBO 2.5 V

    Î)
    Collector Current IC 50 mA

    Î
    Collector Dissipation (T A=25 mW
    Î
    PC 350
    mW/
    Î
    Derate above 25 2.8

    Î
    Junction Temperature TJ 150
    Storage Temperature T STG -55~150

    1. Base 2. Emitter 3. Collector

    ELECTRICAL CHARACTERISTICS (TA=25 Î)


    Characteristic Symbol Test Conditions Min Max Unit

    Collector-Base Breakdown Voltage BVCBO IC=0.01mA, IE=0 20 V


    Collector-Emitter Breakdown Voltage BVCEO IC=3mA, IB=0 12 V

    À
    Emitter Base Breakdown Voltage BVEBO IE=0.01mA, IC=0 2.5 V
    Collector Cut-off Current ICBO VCB=15V, IE=0 0.02
    DC Current Gain hFE VCE=1V, IC=3mA 25
    Collector-Emitter Saturation Voltage VCE (sat) IC=10mA, IB=1mA 0.4 V
    Base-Emitter Saturation Voltage VBE (sat) IC=10mA, IB=1mA 1 V
    Current Gain Bandwidth Product fT VCE=6V, IC=5mA 900 MHz
    Collector Base Capactiance CCB VCB=10V, IE=0, f=0.1MHz to 1MHz 1 pF
    Small Signal Current Gain hFE VCE=6V, IC=2mA, f=1KHz 25
    Noise Figure NF

    VCE=6V, IC=1.5mA, f=200MHz 4.5 dB
    RS=50
    Common Emitter Amplifier Power Gain GPE VCE=6V, IC=5mA, f=200MHz 15 dB

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