Location via proxy:   [ UP ]  
[Report a bug]   [Manage cookies]                
Scribd Logo
Upload

Welcome to Scribd!

  • 5 views

    2N2222A

    Uploaded by

    Jack Harper
    The 2N2222A is a silicon NPN transistor in a TO-18 metal case designed for high-speed switching applications up to 500mA. It has a useful current gain over a wide range of currents, low leakage currents, and low saturation voltage. Key specifications include a collector-emitter breakdown voltage of 40V, saturation voltage below 1V at 150mA, and DC current gain of 100-300 at 150mA. The transistor provides good performance for general purpose switching and small signal applications.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    2N2222A

    Uploaded by

    Jack Harper
    5 views5 pages
    The 2N2222A is a silicon NPN transistor in a TO-18 metal case designed for high-speed switching applications up to 500mA. It has a useful current gain over a wide range of currents, low leakage currents, and low saturation voltage. Key specifications include a collector-emitter breakdown voltage of 40V, saturation voltage below 1V at 150mA, and DC current gain of 100-300 at 150mA. The transistor provides good performance for general purpose switching and small signal applications.

    Original Description:

    bbcjbdjcbskdbjcbskjvbjkwbcjksbdjkcbsdbckjwbeufbwbcjwebjckbwkejbjkwebjkbwk

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    The 2N2222A is a silicon NPN transistor in a TO-18 metal case designed for high-speed switching applications up to 500mA. It has a useful current gain over a wide range of currents, low leakage currents, and low saturation voltage. Key specifications include a collector-emitter breakdown voltage of 40V, saturation voltage below 1V at 150mA, and DC current gain of 100-300 at 150mA. The transistor provides good performance for general purpose switching and small signal applications.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    5 views5 pages

    2N2222A

    Uploaded by

    Jack Harper
    The 2N2222A is a silicon NPN transistor in a TO-18 metal case designed for high-speed switching applications up to 500mA. It has a useful current gain over a wide range of currents, low leakage currents, and low saturation voltage. Key specifications include a collector-emitter breakdown voltage of 40V, saturation voltage below 1V at 150mA, and DC current gain of 100-300 at 150mA. The transistor provides good performance for general purpose switching and small signal applications.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 5

    2N2222A

    NPN Transistor
    DESCRIPTION

    The 2N2222A is silicon planar epitaxial NPN transistors


    in Jedec TO-18 metal case. It is designed for high speed
    switching application at collector current up to 500mA,
    and feature useful current gain over a wide range of collector
    current, low leakage currents and low saturation voltage.

    ABSOLUTE MAXIMUM RATINGS


    Parameter Symbol Rating UNIT
    Collector-Base Votlage (I E=0) VCBO 75 V
    Collector-Emitter Voltage (I B=0) VCEO 40 V
    Emitter-Base Voltage(I C=0) V EBO 6 V
    Collector Current IC 800 mA
    at T A≤25℃
    Total Dissipation 0.5 W
    Ptot
    at T C≤25℃ 1.8 W
    Thermal Resistance Junction to Ambient Rthja 300 °C/W
    Thermal Resistance Junction to Case Rthjc 83.3 °C/W
    Operating Temperature TJ 175 °C
    Storage Temperature Range TSTG -65 ~ 200 °C

    ELECTRICAL CHARACTERISTICS(TC = 25 °C unless otherwise noted)


    Parameter Symbol Test Condition. Min. Max. Unit
    VCB=60V 10 nA
    Collector Cut-off Current (IE=0) ICBO
    VCB=60V, TC=150°C 10 uA
    Collector Cut-off Current (VBE=-3V) ICEX VCE=60V 10 nA
    Base Cut-off Current(V BE=-3V) IBEX VCE=60V 20 nA
    Emitter Cut-off Current(I C=0) IEBO VEB=3V 10 nA
    Collector-Base Breakdown Voltage (I E=0) V(BR)CBO* IC=10uA 75 V
    Collector-Emitter Breakdown Voltage(I B=0) V(BR)CEO* IC=10mA 40 V
    Emitter-Base Breakdown Voltage(IC=0) V(BR)EBO* IE=10uA 6 V
    IC=150mA I B=15mA 0.3 V
    Collector-Emitter Saturation Voltage VCE(sat)*
    IC=500mA I B=50mA 1 V
    IC=150mA I B=15mA 0.6 1.2 V
    Base-Emitter Saturation Voltage VBE(sat)*
    IC=500mA I B=50mA 2 V
    IC=0.1mA VCE=10V 35
    IC=1mA VCE=10V 50
    IC=10mA V CE=10V 75
    DC Current Gain
    hFE* IC=150mA V CE=10V 100 300
    IC=500mA V CE=10V 40
    IC=150mA V CE=1V 50
    IC=10mA VCE=10V TA=-55℃ 35
    IC=1mA V CE=10V f=1KHz 50 300
    Small Signal Current Gain hfe*
    IC=10mA VCE=10V f=1KHz 75 375

    1/5
    2N2222A
    NPN Transistor
    ELECTRICAL CHARACTERISTICS(continued)
    Parameter Symbol Test Condition. Min. Max. Unit
    Transition Frequency fT IC=20mA VCE=20V f=100MHz 300 MHz
    Emitter Base Capacitance CEBO IC=0 VEB=0.5V f=100KHz 25 pF
    Collector Base Capacitance CCBO IE=0 VCB=10V f=100KHz 8 pF
    Real Part of Input Impedance Re(hie) IC=20mA VCE=20V f=300MHz 60 Ω
    IC=0.1mA V CE=10V f=1KHz
    Noise Figure NF 4(Typ.) dB
    Rg=1KΩ
    IC=1mA VCE=10V 2 8 kΩ
    Input Impedance hie
    IC=10mA VCE=10V 0.25 1.25 kΩ
    -4
    IC=1mA VCE=10V 8 10
    Reverse Voltage Ratio hre -4
    IC=10mA VCE=10V 4 10
    IC=1mA VCE=10V 5 35 uS
    Output Admittance hoe
    IC=10mA VCE=10V 25 200 uS
    VCC=30V IC=150mA
    Delay Time td** 10 nS
    IB1=15mA VBB=-0.5V
    VCC=30V IC=150mA
    Rise Time tr** 25 nS
    IB1=15mA VBB=-0.5V
    Storage Time ts** VCC=30V IC=150mA I B1=-IB2=15mA 225 nS
    Fall Time tf** VCC=30V IC=150mA I B1=-IB2=15mA 60 nS
    Feedback Time Constant rbb’ Cd’c IC=20Ma VCE=20V f=31.8MHz 150 pS
    *Pulsed: Pulse duration =300us, duty cycle≤1%
    **see test circuit

    RATINGS AND CHARACTERISTICS CURVES

    2/5
    2N2222A
    NPN Transistor

    3/5
    2N2222A
    NPN Transistor

    4/5
    2N2222A
    NPN Transistor
    PACKAGE OUTLINE DIMENSIONS (TO-18 PACKAGE)

    www.goodarksemi.com 5/5 Doc.US2N2222Ax2.0

    You might also like