TIP3055, 2955

Complementary Power Transistors

Complementary Silicon Power Transistors are designed for use in general
purpose power amplifier and switching applications.

Features:
• Power Dissipation-PD = 90W at TC = 25°C.
• DC Current Gain hFE = 20 ~ 100 at IC = 4.0A.
• VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA.

Dimensions Minimum Maximum NPN PNP

A 20.63 22.38 TIP3055 TIP2955
B 15.38 16.20
15 Ampere
C 1.90 2.70
Complementary Silicon
D 5.10 6.10 Power Transistors
E 14.81 15.22 60 Volts
F 11.72 12.84 90 Watts
G 4.20 4.50
H 1.82 2.46
I 2.92 3.23
J 0.89 1.53
K 5.26 5.66
TO-247(3P)
L 18.50 21.50
Pin 1. Base M 4.68 5.36
2. Collector N 2.40 2.80
3. Emitter O 3.25 3.65
P 0.55 0.70
Dimensions : Millimetres

Maximum Ratings
Characteristic Symbol Rating Unit
Collector-Emitter Voltage VCEO 60
Collector-Emitter Voltage VCER 70
V
Collector-Base Voltage VCBO 100
Emitter-Base Voltage VEBO 7.0
Collector Current-Continuous IC 15
A
Base Current IB 7.0
Total Power Dissipation at Tc = 25°C 90 W
PD
Derate above 25°C 0.72 W/°C
Operating and Storage Junction Temperature Range TJ, TSTG -65 to +150 °C

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Complementary Power Transistors
Thermal Characteristics
Characteristic Symbol Maximum Unit

Thermal Resistance Junction to Case Rθjc 1.39 °C/W

Figure - 1 Power Derating

PD, Power Dissipation (Watts)

TC, Temperature (°C)

Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic Symbol Minimum Maximum Unit
OFF Characteristics
Collector-Emitter Sustaining Voltage (1)
VCEO(SUS) 60 - V
(IC = 30mA, IB = 0)
Collector Cut off Current
ICER - 1.0
(VCE = 70V, RBE= 100Ω)
Collector Cut off Current
ICEO - 0.7
(VCE = 30V, IB = 0)
mA
Collector Cut off Current
ICEV -
(VCE = 100V, VBE(off) = 1.5V)
5.0
Emitter Cut off Current
IEBO
(VEB = 7.0V, IC = 0) -
ON Characteristics (1)
DC Current Gain
(IC = 4.0A, VCE = 4.0V) hFE 20 100
-
5.0
(IC = 10A, VCE = 4.0V)
Collector-Emitter Saturation Voltage
(IC = 4.0A, IB = 0.4A) VCE(sat) 1.1
-
3.0
(IC = 10A, IB = 3.3A) V
Base-Emitter On Voltage
VBE(on) - 1.8
(IC = 4.0A, VCE = 4.0V)
Dynamic Characteristics
Current Gain Bandwidth Product
fT 2.5 - MHz
(IC = 500mA, VCE = 10V, f = 1.0MHz)
Small-Signal Current Gain
hfe 15 - -
(IC = 1.0A, VCE = 4V, f = 1kHz)
(1) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2.0%
(2) fT = hfe • ftest

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 TIP3055, 2955
Complementary Power Transistors
Figure - 2 DC Current Gain
hFE, DC Current Gain

IC, Collector Current (AMP)

Figure - 3 Active Region Safe Operating Area

There are two limitations on the power handling ability of a transistor: average
junction temperature and second breakdown safe operating area curves indicate
IC, Collector Current (AMP)

IC-VCE limits of the transistor that must be observed for reliable operation i.e., the
transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure - 3 is based on TC = 150°C; TJ(PK) is variable depending on
power level. Second breakdown pulse limits are valid for duty cycles to 10%
but must be derated for temperature.

VCE, Collector Emitter Voltage (Volts)

Specifications
IC(av) VCEO hFE Ptot
maximum maximum minimum at 25°C Package Type Part Number
(A) (V) at IC = 4A (W)

PNP TIP2955
15 60 20 90 TO-247
NPN TIP3055

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Complementary Power Transistors
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