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    Darlington Power Transistors: NPN Silicon

    Uploaded by

    joao victor
    The document provides specifications for NPN silicon Darlington transistors. It details maximum ratings, dimensions, electrical characteristics, and switching characteristics for the transistors which are designed for high-voltage, high-speed power switching in inductive circuits.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Darlington Power Transistors: NPN Silicon

    Uploaded by

    joao victor
    54 views4 pages
    The document provides specifications for NPN silicon Darlington transistors. It details maximum ratings, dimensions, electrical characteristics, and switching characteristics for the transistors which are designed for high-voltage, high-speed power switching in inductive circuits.

    Original Description:

    MJ10005

    Original Title

    1662455

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    © © All Rights Reserved

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    The document provides specifications for NPN silicon Darlington transistors. It details maximum ratings, dimensions, electrical characteristics, and switching characteristics for the transistors which are designed for high-voltage, high-speed power switching in inductive circuits.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    54 views4 pages

    Darlington Power Transistors: NPN Silicon

    Uploaded by

    joao victor
    The document provides specifications for NPN silicon Darlington transistors. It details maximum ratings, dimensions, electrical characteristics, and switching characteristics for the transistors which are designed for high-voltage, high-speed power switching in inductive circuits.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 4

    Darlington Power Transistors

    NPN Silicon
    The Darlington transistors are designed for high-voltage, high-
    speed, power switching in inductive circuits where fall time is
    critical. They are particularly suited for line operated switch-mode
    applications such as:
    Features:
    TO-3 • Continuous Collector Current - lc = 20 A
    • Switching Regulators
    • Inverters
    • Solenoid and Relay Drivers
    • Motor Controls

    Dimensions Minimum Maximum

    A 38.75 39.96
    B 19.28 22.23
    C 7.96 9.28
    D 11.18 12.19
    E 25.2 26.67
    F 0.92 1.09
    G 1.38 1.62
    H 29.9 30.4
    Pin 1. Base I 16.64 17.3
    2. Emitter
    Collector (Case) J 3.88 4.36
    K 10.67 11.18
    Dimensions : Millimetres
    Maximum Ratings
    Characteristic Symbol MJ10005 Unit
    VCEV 500
    Collector - Emitter Voltage VCEX (SUS) 450
    V
    VCEO (SUS) 400
    Emitter - Base Voltage VEBO 8
    Collector Current - Continuous IC 20
    - Peak ICM 30 A
    Base Current IB 2.5
    Total Power Dissipation at TC = 25°C 175 W
    at TC = 100°C PD 100 W
    Derate above 25°C 1 W / °C
    Operating and Storage Junction Temperature Range TJ, TSTG -65 to +200 °C

    Thermal Characteristics
    Characteristic Symbol Maximum Unit

    Thermal Resistance Junction to Case Rθjc 1 °C / W

    www.element14.com
    www.farnell.com
    www.newark.com

    Page <1> 11/06/12 V1.1


    Darlington Power Transistors
    NPN Silicon
    Figure - 1 Power Derating
    PD, Power Dissipation
    (W)

    TC, Temperature (°C)

    Electrical Characteristics (TC = 25°C unless otherwise noted)

    Characteristic Symbol Minimum Maximum Unit


    OFF Characteristics
    Collector - Emitter Sustaining Voltage
    VCEO (sus) 400 - V
    (IC = 250 mA, IB = 0, VClamp = Rate VCEO) MJ10005
    Collector Cut off Current
    ICER - 5
    (VCE = Rated VCEV, RBE = 50 Ω, TC = 100°C)
    Collector Cut off Current
    (VCEV = Rated Value, VBE (OFF) = 1.5 V) ICEV 0.25
    - mA
    5
    (VCEV = Rated Value, VBE (OFF) = 1.5 V, TC = 100°C)
    Emitter Cut off Current
    IEBO - 175
    (VEB = 2 V, IC = 0)
    ON Characteristics (1)
    DC Current Gain
    (IC = 5 A, VCE = 5 V) hFE 50 600 -
    (IC = 10 A, VCE = 5 V) 40 400
    Collector - Emitter Saturation Voltage
    (IC = 10 A, IB = 400 mA) 1.9
    VCE (sat) -
    (IC = 20 A, IB = 2 A) 3
    (IC = 10 A, IB = 400 mA, TC = 100°C) 2
    Base - Emitter Saturation Voltage V
    (IC = 10 A, IB = 400 mA) VBE (sat) - 2.5
    (IC = 10 A, IB = 400 mA, TC = 100°C) 2.5
    Diode Forward Voltage
    VF 5
    (IF = 10 A)
    Dynamic Characteristics
    Small - Signal Current Gain (2)
    | hfe | 10 - -
    (IC = 1 A, VCE = 10 V, f = 1 MHz)
    Output Capacitance
    Cob 100 - pF
    (VCB = 10 V, IE = 0 V, f = 100 kHz)
    Switching Characteristics
    Delay Time td - 0.2
    VCC = 250 V, lC = 10 A
    Rise Time tr - 0.6
    IB1 = 400 mA, VBE (o(f) = 5 V µs
    Storage Time ts - 1.5
    tp = 50 µs, Duty Cycle ≤ 2%
    Fall Time tf - 0.5
    (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2%
    (2) fT = |hfe| ° ftest

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    www.farnell.com
    www.newark.com

    Page <2> 11/06/12 V1.1


    Darlington Power Transistors
    NPN Silicon
    DC Current Gain Collector Saturation Region

    VCE, Collector Emitter Voltage (V)


    hFE, DC Current Gain

    IC, Collector Current (A) IB, Base Current (A)

    Collector Emitter Saturation Voltage Base Emitter Voltage


    V, Voltage (V)
    V, Voltage (V)

    IC, Collector Current (A) IC, Collector Current (A)

    Collector Cut -off Region Output Capacitances


    Cob, Output Capacitance (pF)
    V, Voltage (V)

    VBE, Base Emitter Voltage (V) VR, Reverse Voltage (V)

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    www.farnell.com
    www.newark.com

    Page <3> 11/06/12 V1.1


    Darlington Power Transistors
    NPN Silicon
    Turn - on Time Turn - off Time

    t, Time (µs)
    t, Time (µs)

    IC, Collector Current (A) IC, Collector Current (A)

    Active Region Safe Operating Area Reverse Bias Switching Safe Operating Area
    IC, Collector Current (A)
    IC, Collector Current (A)

    VCE, Collector Emitter Voltage (V)


    VCE, Collector Emitter Voltage (V)

    Part Number Table


    Description Part Number

    Darlington Transistor, TO-3 MJ10005

    Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of
    it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces
    all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use
    made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted.
    Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising)
    is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. © Premier Farnell plc 2012.

    www.element14.com
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    www.newark.com

    Page <4> 11/06/12 V1.1

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