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Plastic Power Transistor: Feature

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Plastic Power Transistor

Pin Configuration:
1. Base
2. Collector
3. Emitter
4. Collector

Feature:
•  C
 omplementary Silicon Transistors Intended for a Wide Variety of Switching and Amplifier Applications, Series and Shunt
Regulators, Driver and Output Stages of Hi-Fi Amplifiers

Absolute Maximum Ratings (Ta = 25°C):


Description Symbol TIP41C Unit
Collector Emitter Voltage VCEO
100
Collector Base Voltage VCBO V
Emitter Base Voltage VEBO 5
Collector Current Continuous IC 6
Collector Current Peak ICM 10 A
Base Current IB 2
Power Dissipation upto Tc = 25°C 65
Derate above 25°C 520 W
PD
Power Dissipation upto Ta = 25°C 2 mW/ºC
Derate above 25°C 16
Unclamped Inductive Load Energy *E 62.5 mJ
Storage Temperature Tstg 150
°C
Junction Temperature Tj - 65 to +150
Thermal Resistance
Junction to Case Rth (j-c) 1.92
ºC/W
Junction to Ambient in Free Air Rth (j-a) 62.5

* Ic = 2.5A, L = 20mH, P.R.F. = 10Hz, Vcc = 10V, RBE = 100Ω

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Page <1> 13/09/19 V1.0


Plastic Power Transistor

Electrical Characteristics (TC = 25°C unless specified otherwise):


Description Symbol Test Condition Min. Max. Unit
Collector Emitter Voltage *VCEO IC = 30mA, IB = 0 100 - V
Collector Cut off Current ICEO VCE = 60V, IB = 0 - 0.7
Collector Cut off Current ICES VCE = VCEO (max.), VBE = 0 - 0.4 mA
Emitter Cut off Current IEBO VEB = 5V, IC = 0 - 1
IC = 0.3A, VCE = 4V 30
DC Current Gain *hFE 75 -
IC = 3A, VCE = 4V 15
Collector Emitter Saturation
*VCE (sat) IC = 6A, IB = 0.6A - 1.5
Voltage V
Base Emitter on Voltage *VBE (on) IC = 6A, VCE =4 V - 2
*Pulse Test : Pulse width ≤300μs, Duty Cycle ≤2%.

Dynamic Characteristics
Description Symbol Test Condition Min. Max. Unit
Small Signal Current Gain hfe IC = 0.5A, VCE = 10V, f = 1kHz 20 - -
Transition Frequency fT IC = 0.5A, VCE = 10V, f = 1MHz 3 - MHz

Switching Characteristics
Description Symbol Test Condition Typical Unit
Turn On Time ton Vcc = 30V, Ic = 6A, IB1 = IB2 = 0.6A, 0.6
µs
Turn Off Time toff RL = 5Ω 1.4

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Plastic Power Transistor

Dimensions Min. Max.


A 14.42 16.51
B 9.63 10.67
C 3.56 4.83
D - 0.9
E 1.15 1.4
F 3.75 3.88
G 2.29 2.79
H 2.54 3.43
J - 0.56
K 12.7 14.73
L 2.8 4.07
M 2.03 2.92
Pin Configuration: N - 31.24
1. Base
2. Collector O 7°
3. Emitter Dimensions : Millimetres
4. Collector

Part Number Table


Description Part Number
Transistor, NPN, TO-220 TIP41C

Important Notice : This data sheet and its contents (the “Information”) belong to the members of the AVNET group of companies (the “Group”) or are licensed to it. No licence is granted for
the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change
without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness,
any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make
any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or
where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its
negligence. Multicomp Pro is the registered trademark of Premier Farnell Limited 2019.

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Page <3> 13/09/19 V1.0

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