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S9015

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Semiconductor STS9015

PNP Silicon Transistor

Description
• General purpose application.
• Switching application.
Features
• Excellent hFE linearity : hFE(IC=0.1mA) / hFE(IC=2mA) = 0.95(Typ.)
• Low noise : NF = 10dB(Max.)
• Complementary pair with STS9014

Ordering Information
Type NO. Marking Package Code

STS9015 STS9015 TO-92

Outline Dimensions unit : mm

3.45±0.1
4.5±0.1
2.25±0.1
4.5±0.1

0.4±0.02
2.06±0.1
14.0±0.40

1.27 Typ.

2.54 Typ.

1 2 3

PIN Connections
1. Emitter
1.20±0.1

2. Base
0.38

3. Collector

KST-9018-000 1
STS9015
Absolute maximum ratings (Ta=25°°C)
Characteristic Symbol Ratings Unit
Collector-Base voltage VCBO -50 V
Collector-Emitter voltage VCEO -50 V
Emitter-Base voltage VEBO -5 V
Collector current IC -150 mA
Emitter current IE 150 mA
Collector dissipation PC 625 mW
Junction temperature Tj 150 °C
Storage temperature Tstg -55~150 °C

Electrical Characteristics (Ta=25°°C)


Characteristic Symbol Test Condition Min. Typ. Max. Unit
Collector cut-off current ICBO VCB=-50V, IE=0 - - -50 nA
Emitter cut-off current IEBO VEB=-5V, IC=0 - - -100 nA
DC current gain hFE* VCE=-5V, IC=-1mA 100 - 1000 -
Collector-Emitter saturation voltage VCE(sat) IC=-100mA, IB=-10mA - -0.1 -0.3 V
Transition frequency fT VCE=-10V, IC=-1mA 60 - - MHz
Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz - 4 7 pF
VCE=-6V, IC=-0.1mA
Noise figure NF - - 10 dB
f=1KHz, Rg=10K1
*: hFE rank / B : 100~300, C : 200~600, D : 400~1000.

KST-9018-000 2
STS9015
Electrical Characteristic Curves

Fig. 1 PC-Ta Fig. 2 IC-VBE

Fig. 3 IC-VCE Fig. 4 hFE-IC

Fig. 5 VCE(sat)-IC

KST-9018-000 3

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