Power Transistors

2SA0794 (2SA794), 2SA0794A (2SA794A)

Silicon PNP epitaxial planar type

For low-frequency output driver Unit: mm

8.0+0.5
Complementary to 2SC1567, 2SC1567A –0.1 3.2±0.2

φ 3.16±0.1

11.0±0.5
■ Features

3.8±0.3

3.05±0.1
• High collector-emitter voltage (Base open) VCEO
• Optimum for the driver stage of low-frequency and 40 W to 100 W
output amplifier

1.9±0.1
• TO-126B package which requires no insulation plate for installa-

16.0±1.0
tion to the heat sink

■ Absolute Maximum Ratings Ta = 25°C

0.75±0.1
Parameter Symbol Rating Unit 0.5±0.1
0.5±0.1 1.76±0.1
4.6±0.2
Collector-base voltage 2SA0794 VCBO −100 V 2.3±0.2
1: Emitter
(Emitter open) 2SA0794A −120 2: Collector
1 2 3
Collector-emitter voltage 2SA0794 VCEO −100 V 3: Base
TO-126B-A1 Package
(Base open) 2SA0794A −120
Emitter-base voltage (Collector open) VEBO −5 V
Collector current IC − 0.5 A
Peak collector current ICP −1 A
Collector power dissipation PC 1.2 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage 2SA0794 VCEO IC = −100 µA, IB = 0 −100 V
(Base open) 2SA0794A −120
Emitter-base voltage (Collector open) VEBO IE = −1 µA, IC = 0 −5 V
Forward current transfer ratio hFE1 * VCE = −10 V, IC = −150 mA 90 220 
hFE2 VCE = −5 V, IC = −500 mA 50 100
Collector-emitter saturation voltage VCE(sat) IC = −500 mA, IB = −50 mA − 0.2 − 0.4 V
Base-emitter saturation voltage VBE(sat) IC = −500 mA, IB = −50 mA − 0.85 −1.20 V
Transition frequency fT VCB = −10 V, IE = 50 mA, f = 200 MHz 120 MHz
Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz 20 30 pF
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank Q R
hFE1 90 to 155 130 to 220

Note) The part numbers in the parenthesis show conventional part number.

Publication date: February 2003 SJD00001BED 1

2SA0794, 2SA0794A

PC  Ta IC  VCE IC  I B
1.6 −1.2 −1.2
TC = 25°C VCE = −10 V
TC = 25°C
−18 mA IB = −20 mA
Collector power dissipation PC (W)

−1.0 −1.0
−16 mA
1.2 −14 mA −12 mA

Collector current IC (A)

Collector current IC (A)

−10 mA
− 0.8 −8 mA − 0.8
−6 mA

0.8 − 0.6 − 0.6

−4 mA

− 0.4 −2 mA − 0.4
0.4
− 0.2 − 0.2

0 0 0
0 40 80 120 160 0 −2 −4 −6 −8 −10 −12 0 −2 −4 −6 −8 −10 −12 −14
Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Base current IB (mA)

IC  VBE VCE(sat)  IC VBE(sat)  IC

− 0.6
IC / IB = 10
Collector-emitter saturation voltage VCE(sat) (V)

VCE = −10 V IC / IB = 10

Base-emitter saturation voltage VBE(sat) (V)

− 0.5
Ta = 125°C −25°C TC = −25°C
−1 −1
Collector current IC (A)

− 0.4 100°C
75°C
25°C
TC = 100°C
− 0.3
25°C
−25°C
− 0.1 − 0.1
− 0.2

− 0.1

0 − 0.01 − 0.01
0 − 0.2 − 0.4 − 0.6 − 0.8 −1.0 − 0.01 − 0.1 −1 − 0.01 − 0.1 −1
Base-emitter voltage VBE (V) Collector current IC (A) Collector current IC (A)

hFE  IC fT  I E Cob  VCB

200 50
C (pF)

VCE = −10 V VCB = −10 V IE = 0

f = 200 MHz f = 1 MHz
TC = 25°C
(Common base, input open circuited) ob

TC = 25°C
Forward current transfer ratio hFE

Transition frequency fT (MHz)

160 40
1 000

120 30
TC = 100°C
Collector output capacitance

25°C

80 20
100 −25°C

40 10

10 0 0
− 0.01 − 0.1 −1 1 10 100 −1 −10 −100
Collector current IC (A) Emitter current IE (mA) Collector-base voltage VCB (V)

2 SJD00001BED
 2SA0794, 2SA0794A

ICEO  Ta ICBO  Ta Safe operation area

105 104 −10
VCE = 20 V VCB = −20 V Single pulse
TC = 25°C

104 ICP
103 −1

Collector current IC (A)

ICBO (Ta = 25°C)
ICEO (Ta = 25°C)

IC
103
t = 10 ms

ICBO (Ta)
ICEO (Ta)

t=1s
102 − 0.1

102

10 − 0.01
10

1 1 − 0.001
0 40 80 120 160 200 0 40 80 120 160 −1 −10 −100 −1 000
Ambient temperature Ta (°C) Ambient temperature Ta (°C) Collector-emitter voltage VCE (V)

SJD00001BED 3
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2002 JUL
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