Transistor

2SD2184
Silicon NPN epitaxial planar type
Unit: mm
For low-frequency output amplification 6.9±0.1 2.5±0.1
0.7 4.0 (0.8)
Complementary to 2SB1438

4.5±0.1

(0.5)
(1.0)
(0.2)
■ Features 0.65 max.

(1.0)
• High collector to emitter voltage VCEO
• Low collector to emitter saturation voltage VCE(sat)

14.5±0.5
• Allowing supply with the radial taping

■ Absolute Maximum Ratings Ta = 25°C

0.45+0.10
–0.05 0.45+0.10
–0.05
Parameter Symbol Rating Unit 1.05±0.05
Collector to base voltage VCBO 150 V 2.5±0.5 2.5±0.5

Collector to emitter voltage VCEO 150 V 1: Emitter

2: Collector
Emitter to base voltage VEBO 5 V 1 2 3 3: Base
Peak collector current ICP 1.5 A MT-2-A1 Package

Collector current IC 1 A
Collector power dissipation * PC 1 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the
board thickness of 1.7 mm for the collector portion

■ Electrical Characteristics Ta = 25°C

Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current ICBO VCB = 75 V, IE = 0 0.1 µA
Collector to base voltage VCBO IC = 10 µA, IE = 0 150 V
Collector to emitter voltage VCEO IC = 1 mA, IB = 0 150 V
Emitter to base voltage VEBO IE = 10 µA, IC = 0 5 V
Forward current transfer ratio hFE1 *2 VCE = 2 V, IC = 100 mA 120 340
hFE2 VCE = 2 V, IC = 500 mA 40
Collector to emitter saturation voltage *1 VCE(sat) IC = 500 mA, IB = 25 mA 0.11 0.3 V
Base to emitter saturation voltage *1 VBE(sat) IC = 500 mA, IB = 25 mA 0.8 1.2 V
Transition frequency fT VCB = 10 V, IE = −50 mA, f = 200 MHz 90 MHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 12 20 pF
Note) *1: Pulse measurement
*2: hFE Rank classification
Rank R S
hFE1 120 to 240 170 to 340

Publication date: April 2002 SJC00245BED 1

2SD2184

PC  Ta IC  VCE VCE(sat)  IC
1.2

Collector to emitter saturation voltage VCE(sat) (V)

1 200 10
Printed circut board: Copper Ta = 25°C IC / IB = 20
foil area of 1 cm2 or more, and
the board thickness of 1.7 mm 3
Collector power dissipation PC (W)

1.0 1 000
for the collector portion.

Collector current IC (mA)

1
IB = 8 mA
0.8 800
7 mA 0.3
6 mA Ta = 100°C
5 mA
0.6 600 0.1 25°C
4 mA
3 mA 0.03 −25°C
0.4 400

2 mA 0.01
0.2 200
1 mA 0.003

0 0 0.001
0 40 80 120 160 200 0 2 4 6 8 10 12 0.01 0.03 0.1 0.3 1 3 10
Ambient temperature Ta (°C) Collector to emitter voltage VCE (V) Collector current IC (A)

VBE(sat)  IC hFE  IC fT  IE
100 IC / IB = 20 500 200 Ta = 25°C
VCE = 2 V
Base to emitter saturation voltage VBE(sat) (V)

VCB = 10 V
30
Forward current transfer ratio hFE

Transition frequency fT (MHz)

400 160
10

3 300 120
25°C

1 Ta = −25°C Ta = 100°C
100°C 200 80
0.3 25°C

0.1
−25°C
100 40
0.03

0.01 0 0
0.01 0.03 0.1 0.3 1 3 10 0.01 0.03 0.1 0.3 1 3 10 −1 −3 −10 −30 −100
Collector current IC (A) Collector current IC (A) Emitter current IE (mA)

Cob  VCB
60
IE = 0
f = 1 MHz
Ta = 25°C
Collector output capacitance Cob (pF)

50

40

30

20

10

0
1 3 10 30 100
Collector to base voltage VCB (V)

2 SJC00245BED
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2001 MAR