Power Transistors

2SD1264, 2SD1264A
Silicon NPN triple diffusion planar type

For low-freauency power amplification

Unit: mm
For TV vertical deflection output
10.0±0.2 4.2±0.2
Complementary to 2SB940 and 2SB940A

0.7±0.1
5.5±0.2 2.7±0.2

4.2±0.2
■ Features

7.5±0.2
φ3.1±0.1

16.7±0.3
● High collector to emitter VCEO
● Large collector power dissipation PC
● Full-pack package which can be installed to the heat sink with
one screw 1.3±0.2

4.0
1.4±0.1

14.0±0.5
■ Absolute Maximum Ratings

Solder Dip
(TC=25˚C) 0.5 +0.2
–0.1
0.8±0.1

Parameter Symbol Ratings Unit

2.54±0.25
Collector to base voltage VCBO 200 V
Collector to 2SD1264 150 5.08±0.5
VCEO V 1 2 3
emitter voltage 2SD1264A 180
1:Base
Emitter to base voltage VEBO 6 V 2:Collector
3:Emitter
Peak collector current ICP 3 A TO–220 Full Pack Package(a)
Collector current IC 2 A
Collector power TC=25°C 30
PC W
dissipation Ta=25°C 2
Junction temperature Tj 150 ˚C
Storage temperature Tstg –55 to +150 ˚C

■ Electrical Characteristics (TC=25˚C)

Parameter Symbol Conditions min typ max Unit
Collector cutoff current ICBO VCB = 200V, IE = 0 50 µA
Emitter cutoff current IEBO VEB = 4V, IC = 0 50 µA
Collector to base voltage VCBO IC = 50µA, IE = 0 200 V
Collector to emitter 2SD1264 150
VCEO IC = 5mA, IB = 0 V
voltage 2SD1264A 180
Emitter to base voltage VEBO IE = 500µA, IC = 0 6 V
hFE1* VCE = 10V, IC = 150mA 60 240
Forward current transfer ratio
hFE2 VCE = 10V, IC = 400mA 50
Base to emitter voltage VBE VCE = 10V, IC = 400mA 1 V
Collector to emitter saturation voltage VCE(sat) IC = 500mA, IB = 50mA 1 V
Transition frequency fT VCE = 5V, IC = 0.5A, f = 1MHz 20 MHz

*h Rank classification
FE1

Rank Q P
hFE1 60 to 140 100 to 240

1
Free Datasheet http://www.datasheet4u.net/
Power Transistors 2SD1264, 2SD1264A

PC — Ta IC — VCE IC — VBE
50 1.2 1.2
(1) TC=Ta TC=25˚C
(2) With a 100 × 100 × 2mm
Collector power dissipation PC (W)

Al heat sink IB=7mA 25˚C

1.0 1.0
40 (3) With a 50 × 50 × 2mm 6mA TC=100˚C –25˚C

Collector current IC (A)

Collector current IC (A)

Al heat sink
(4) Without heat sink
(PC=2W) 0.8 5mA 0.8
(1)
30
4mA
0.6 0.6

20 3mA

0.4 0.4
2mA
(2)
10
0.2 1mA 0.2
(3)
(4)
0 0 0
0 20 40 60 80 100 120 140 160 0 4 8 12 16 20 24 0 0.2 0.4 0.6 0.8 1.0 1.2
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V)

VCE(sat) — IC hFE — IC fT — IC
10 10000 1000
Collector to emitter saturation voltage VCE(sat) (V)

IC/IB=10 VCE=10V VCE=5V

f=1MHz
Forward current transfer ratio hFE

3000 300 TC=25˚C

Transition frequency fT (MHz)

3
1000 100

1 TC=100˚C
300 TC=100˚C 30
25˚C
0.3 100 10
25˚C
–25˚C

–25˚C 30 3
0.1

10 1

0.03
3 0.3

0.01 1 0.1
0.01 0.03 0.1 0.3 1 0.01 0.03 0.1 0.3 1 3 10 0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A) Collector current IC (A) Collector current IC (A)

Area of safe operation (ASO) Rth(t) — t

10 103
Non repetitive pulse (1) Without heat sink
ICP TC=25˚C (2) With a 100 × 100 × 2mm Al heat sink
Thermal resistance Rth(t) (˚C/W)

3
IC t=0.5ms 102 (1)
Collector current IC (A)

1
5ms
1ms (2)
0.3 10
DC
0.1

1
0.03

0.01
10–1
2SD1264A
2SD1264

0.003

0.001 10–2
1 3 10 30 100 300 1000 10–4 10–3 10–2 10–1 1 10 102 103 104
Collector to emitter voltage VCE (V) Time t (s)

2
Free Datasheet http://www.datasheet4u.net/