Transistor

2SB1218A
Silicon PNP epitaxial planer type

For general amplification

Unit: mm
Complementary to 2SD1819A

2.1±0.1

■ Features 0.425 1.25±0.1 0.425

● High foward current transfer ratio hFE.

+0.1
0.3–0
● S-Mini type package, allowing downsizing of the equipment and

0.65
1

2.0±0.2

1.3±0.1
automatic insertion through the tape packing and the magazine

0.65
3
packing.
2

■ Absolute Maximum Ratings (Ta=25˚C)

0.2

0.15–0.05
+0.1
Parameter Symbol Ratings Unit

0.9±0.1

0.7±0.1
Collector to base voltage VCBO –45 V

0 to 0.1
0.2±0.1
Collector to emitter voltage VCEO –45 V
Emitter to base voltage VEBO –7 V
Peak collector current ICP –200 mA 1:Base
2:Emitter EIAJ:SC–70
Collector current IC –100 mA
3:Collector S-Mini Type Package
Collector power dissipation PC 150 mW
Junction temperature Tj 150 ˚C Marking symbol : B
Storage temperature Tstg –55 ~ +150 ˚C

■ Electrical Characteristics (Ta=25˚C)

Parameter Symbol Conditions min typ max Unit
ICBO VCB = –20V, IE = 0 –0.1 µA
Collector cutoff current
ICEO VCE = –10V, IB = 0 –100 µA
Collector to base voltage VCBO IC = –10µA, IE = 0 –45 V
Collector to emitter voltage VCEO IC = –2mA, IB = 0 –45 V
Emitter to base voltage VEBO IE = –10µA, IC = 0 –7 V
Forward current transfer ratio hFE * VCE = –10V, IC = –2mA 160 460
Collector to emitter saturation voltage VCE(sat) IC = –100mA, IB = –10mA – 0.3 – 0.5 V
Transition frequency fT VCB = –10V, IE = 1mA, f = 200MHz 80 MHz
Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 2.7 pF

*h Rank classification
FE

Rank Q R S
hFE 160 ~ 260 210 ~ 340 290 ~ 460
Marking Symbol BQ BR BS

1
Transistor 2SB1218A

PC — Ta IC — VCE IC — I B
240 –120 –60
Ta=25˚C VCE=–5V
Collector power dissipation PC (mW)

Ta=25˚C
200 –100 –50

Collector current IC (mA)

Collector current IC (mA)

160 –80 –40
IB=–300µA

120 –60 –30

–250µA
–200µA
80 –40 –20
–150µA

–100µA
40 –20 –10
–50µA

0 0 0
0 20 40 60 80 100 120 140 160 0 –2 –4 –6 –8 –10 –12 0 –150 –300 –450
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base current IB (µA)

IB — VBE IC — VBE VCE(sat) — IC

–400 –240 –10

Collector to emitter saturation voltage VCE(sat) (V)

VCE=–5V VCE=–5V IC/IB=10
Ta=25˚C
–350 25˚C –3
–200
Ta=75˚C –25˚C
Collector current IC (mA)

–300 –1
Base current IB (µA)

–160
–250 – 0.3 Ta=75˚C
25˚C
–200 –120 – 0.1
–25˚C
–150 – 0.03
–80

–100 – 0.01

–40
–50 – 0.003

0 0 – 0.001
0 – 0.6 –1.2 –1.8 0 – 0.4 – 0.8 –1.2 –1.6 –2.0 –1 –3 –10 –30 –100 –300 –1000
Base to emitter voltage VBE (V) Base to emitter voltage VBE (V) Collector current IC (mA)

hFE — IC fT — I E Cob — VCB

600 160 8
VCE=–10V VCB=–10V IE=0
Collector output capacitance Cob (pF)

Ta=25˚C f=1MHz
140 7
Forward current transfer ratio hFE

Ta=25˚C
Transition frequency fT (MHz)

500

120 6

400
Ta=75˚C 100 5

300 25˚C 80 4

–25˚C 60 3
200

40 2

100
20 1

0 0 0
–1 –3 –10 –30 –100 –300 –1000 0.1 0.3 1 3 10 30 100 –1 –3 –10 –30 –100
Collector current IC (mA) Emitter current IE (mA) Collector to base voltage VCB (V)

2
Transistor 2SB1218A

NF — IE NF — IE h Parameter — IE
6 20
VCB=–5V
VCB=–5V 300
Rg=50kΩ
f=1kHz 18
Ta=25˚C
5 Rg=2kΩ
hfe
Ta=25˚C 16
100
Noise figure NF (dB)

Noise figure NF (dB)

14
4

h Parameter
12 hoe (µS)
f=100Hz 30
3 10
1kHz
8 10
2 10kHz
6
hie (kΩ)
4 3
1
VCE=–5V
2 f=270Hz
hre (✕10–4) Ta=25˚C
0 0 1
0.01 0.03 0.1 0.3 1 3 10 0.1 0.3 1 3 10 0.1 0.3 1 3 10
Emitter current IE (mA) Emitter current IE (mA) Emitter current IE (mA)

h Parameter — VCE

300 IE=2mA
f=270Hz
hfe Ta=25˚C
100
h Parameter

30

hoe (µS)
10

hre (✕10–4)
3
hie (kΩ)

1
–1 –3 –10 –30 –100
Collector to emitter voltage VCE (V)