Transistor

2SB0709A (2SB709A)
Silicon PNP epitaxial planer type

For general amplification

Unit: mm
Complementary to 2SD0601A (2SD601A)
0.40+0.10
ñ0.05
0.16+0.10
-0.06

■ Features

1.50+0.25
-0.05
2.8+0.2
-0.3
● High foward current transfer ratio hFE.

0.4±0.2
● Mini type package, allowing downsizing of the equipment and

5°
1 2
automatic insertion through the tape packing and the magazine

(0.65)
(0.95) (0.95)
packing. 1.9±0.1
2.90+0.20
-0.05

■ Absolute Maximum Ratings (Ta=25˚C) 10°

Parameter Symbol Ratings Unit

1.1+0.2

1.1+0.3
-0.1

-0.1
Collector to base voltage VCBO –45 V

0 to 0.1
Collector to emitter voltage VCEO –45 V
Emitter to base voltage VEBO –7 V
Peak collector current ICP –200 mA
Collector current IC –100 mA 1:Base
2:Emitter EIAJ:SC–59
Collector power dissipation PC 200 mW
3:Collector Mini3-G1 Package
Junction temperature Tj 150 ˚C
Storage temperature Tstg –55 ~ +150 ˚C

■ Electrical Characteristics (Ta=25˚C)

Parameter Symbol Conditions min typ max Unit
ICBO VCB = –20V, IE = 0 – 0.1 µA
Collector cutoff current
ICEO VCE = –10V, IB = 0 –100 µA
Collector to base voltage VCBO IC = –10µA, IE = 0 –45 V
Collector to emitter voltage VCEO IC = –2mA, IB = 0 –45 V
Emitter to base voltage VEBO IE = –10µA, IC = 0 –7 V
Forward current transfer ratio hFE * VCE = –10V, IC = –2mA 160 460
Collector to emitter saturation voltage VCE(sat) IC = –100mA, IB = –10mA – 0.3 – 0.5 V
Transition frequency fT VCB = –10V, IE = 1mA, f = 200MHz 80 MHz
Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 2.7 pF

*1h Rank classification

FE

Rank Q R S
hFE 160 ~ 260 210 ~ 340 290 ~ 460
Marking Symbol BQ BR BS

Note.) The Part number in the Parenthesis shows conventional part number.

179
Transistor 2SB0709A

PC — Ta IC — VCE IC — I B
240 –120 –60
Ta=25˚C VCE=–5V
Collector power dissipation PC (mW)

Ta=25˚C
200 –100 –50

Collector current IC (mA)

Collector current IC (mA)

160 –80 –40
IB=–300µA

120 –60 –30

–250µA
–200µA
80 –40 –20
–150µA

–100µA
40 –20 –10
–50µA

0 0 0
0 20 40 60 80 100 120 140 160 0 –2 –4 –6 –8 –10 –12 0 –150 –300 –450
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base current IB (µA)

IB — VBE IC — VBE VCE(sat) — IC

–400 –240 –10

Collector to emitter saturation voltage VCE(sat) (V)

VCE=–5V VCE=–5V IC/IB=10
Ta=25˚C
–350 25˚C –3
–200
Ta=75˚C –25˚C
Collector current IC (mA)

–300 –1
Base current IB (µA)

–160
–250 – 0.3 Ta=75˚C
25˚C
–200 –120 – 0.1
–25˚C
–150 – 0.03
–80

–100 – 0.01

–40
–50 – 0.003

0 0 – 0.001
0 – 0.6 –1.2 –1.8 0 – 0.4 – 0.8 –1.2 –1.6 –2.0 –1 –3 –10 –30 –100 –300 –1000
Base to emitter voltage VBE (V) Base to emitter voltage VBE (V) Collector current IC (mA)

hFE — IC fT — I E Cob — VCB

600 160 8
VCE=–10V VCB=–10V IE=0
Collector output capacitance Cob (pF)

Ta=25˚C f=1MHz
140 7
Forward current transfer ratio hFE

Ta=25˚C
Transition frequency fT (MHz)

500

120 6

400
Ta=75˚C 100 5

300 25˚C 80 4

–25˚C 60 3
200

40 2

100
20 1

0 0 0
–1 –3 –10 –30 –100 –300 –1000 0.1 0.3 1 3 10 30 100 –1 –3 –10 –30 –100
Collector current IC (mA) Emitter current IE (mA) Collector to base voltage VCB (V)

180
Transistor 2SB0709A

NF — IE NF — IE h Parameter — IE
6 20
VCB=–5V
VCB=–5V 300
Rg=50kΩ
f=1kHz 18
Ta=25˚C
5 Rg=2kΩ
hfe
Ta=25˚C 16
100
Noise figure NF (dB)

Noise figure NF (dB)

14
4

h Parameter
12 hoe (µS)
f=100Hz 30
3 10
1kHz
8 10
2 10kHz
6
hie (kΩ)
4 3
1
VCE=–5V
2 f=270Hz
hre (✕10–4) Ta=25˚C
0 0 1
0.01 0.03 0.1 0.3 1 3 10 0.1 0.3 1 3 10 0.1 0.3 1 3 10
Emitter current IE (mA) Emitter current IE (mA) Emitter current IE (mA)

h Parameter — VCE

300 IE=2mA
f=270Hz
hfe Ta=25˚C
100
h Parameter

30

hoe (µS)
10

hre (✕10–4)
3
hie (kΩ)

1
–1 –3 –10 –30 –100
Collector to emitter voltage VCE (V)

181
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Govern-
ment if any of the products or technologies described in this material and controlled under the
"Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative character-
istics and applied circuit examples of the products. It does not constitute the warranting of industrial
property, the granting of relative rights, or the granting of any license.
(3) The products described in this material are intended to be used for standard applications or gen-
eral electronic equipment (such as office equipment, communications equipment, measuring in-
struments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(4) The products and product specifications described in this material are subject to change without
notice for reasons of modification and/or improvement. At the final stage of your design, purchas-
ing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to
make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, redundant design is recommended,
so that such equipment may not violate relevant laws or regulations because of the function of our
products.
(6) When using products for which dry packing is required, observe the conditions (including shelf life
and after-unpacking standby time) agreed upon when specification sheets are individually exchanged.
(7) No part of this material may be reprinted or reproduced by any means without written permission
from our company.

Please read the following notes before using the datasheets

A. These materials are intended as a reference to assist customers with the selection of Panasonic
semiconductor products best suited to their applications.
Due to modification or other reasons, any information contained in this material, such as available
product types, technical data, and so on, is subject to change without notice.
Customers are advised to contact our semiconductor sales office and obtain the latest information
before starting precise technical research and/or purchasing activities.
B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but
there is always the possibility that further rectifications will be required in the future. Therefore,
Panasonic will not assume any liability for any damages arising from any errors etc. that may ap-
pear in this material.
C. These materials are solely intended for a customer's individual use.
Therefore, without the prior written approval of Panasonic, any other use such as reproducing,
selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.

2001 MAR