SMD Type Transistors

NPN Transistors
2SC3356
SOT-23 Unit: mm
2.9 -0.1
+0.1

0.4 -0.1
+0.1

0.4
Features

+0.1
2.4 -0.1

+0.1
1.3 -0.1
Low noise and high gain.
NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz

0.55
1 2
High power gain. 0.95 -0.1
+0.1
0.1 -0.01
+0.05

1.9 -0.1
+0.1

MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz

+0.1
0.97 -0.1
1.Base

2.Emitter

+0.1
0.38 -0.1
0-0.1
3.collector

Absolute Maximum Ratings Ta = 25

Parameter Symbol Rating Unit
C ol le cto r to b as e v ol ta ge VCBO 20 V
Collector to emitter v oltage VCEO 12 V
Emitter to base voltage VEBO 3.0 V
Collector current (DC) IC 100 mA
Total power dissipation Ptot 200 mW
Junction temperature Tj 150
Storage temperature range Tstg -65 to +150

Electrical Characteristics Ta = 25

Parameter Symbol Test Conditions Min Typ Max Unit

Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 20
Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 12 V
Emitter - base breakdown voltage VEBO IE= 100 uA， IC= 0 3
Collector-base cut-off current ICBO VCB= 10 V , IE= 0 1
uA
Emitter cut-off current IEBO VEB= 3V , IC=0 1
Collector-emitter saturation voltage * VCE(sat) IC=50 mA, IB=5mA 0.4
V
Base - emitter saturation voltage * VBE(sat) IC=50 mA, IB=5mA 1.2
DC current gain * hFE VCE= 10V, IC= 20mA 50 400
Insertion power gain |S21e | 2
VCE = 10 V, IC = 20 mA, f= 1GHz 11.5
dB
Noise figure NF VCE = 10 V, IC = 7 mA, f= 1GHz 1.1 2
Reverse transfer capacitance Cre VCB= 10V, IE= 0,f=1MHz 0.55 1 pF
Transition frequency fT VCE= 10V, IC= 20mA 7 GHz

*. Pulse measurement: PW 350 s, Duty Cycle 2%.

hFE Classification
Type 2SC3356-R23 2SC3356-R24 2SC3356-R25 2SC3356-R26
Range 50-100 80-160 125-250 250-400
Marking R23 R24 R25 R26

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 SMD Type Transistors

2SC3356
■ Typical Characterisitics

TOTAL POWER DISSIPATION vs. FEED-BACK CAPACITANCE vs.

AMBIENT TEMPERATURE COLLECTOR TO BASE VOLTAGE
2
f = 1.0 MHz
PT-Total Power Dissipation-mW

Free Air

Cre-Feed-back Capacitance-pF
200

100

0.5

0.3
0 50 100 150 0 0.5 1 2 5 10 20 30

TA-Ambient Temperature-°C VCB-Collector to Base Voltage-V

DC CURRENT GAIN vs. INSERTION GAIN vs.

COLLECTOR CURRENT COLLECTOR CURRENT
200 15
VCE = 10 V
|S21e|2-Insertion Gain-dB

100
hFE-DC Current Gain

10

50

5
20
VCE = 10 V
f = 1.0 GHz
10 0
0.5 1 5 10 50 0.5 1 5 10 50 70
IC-Collector Current-mA IC-Collector Current-mA

GAIN BANDWIDTH PRODUCT vs. INSERTION GAIN, MAXIMUM GAIN

COLLECTOR CURRENT vs. FREQUENCY
10
fT-Gain Bandwidth Product-MHz

5.0 Gmax
20
|S21e|2-Insertion Gain-dB
Gmax-Maximum Gain-dB

3.0 |S21e|2
2.0

1.0
10
0.5
0.3
0.2 VCE = 10 V
VCE = 10 V IC = 20 mA
0.1 0
0 0.5 1.0 5.0 10 30 0.1 0.2 0.4 0.6 0.81.0 2
IC-Collector Current-mA f-Frequency-GHz

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SMD Type Transistors

2SC3356
■ Typical Characterisitics

NOISE FIGURE vs. NOISE FIGURE, FORWARD INSERTION

COLLECTOR CURRENT GAIN vs. COLLECTOR TO EMITTER VOLTAGE
7 18 5
VCE = 10 V f = 1.0 GHz
f = 1.0 GHz IC = 20 mA
6
15 4

|S21e|2-Insertion Gain-dB
|S21e|2
NF-Noise Figure-dB

NF-Noise Figure-dB
5

4 12 3

3
6 2
NF
2
3 1
1

0 0
0.5 1 5 10 50 70 0 2 4 6 8 10
IC-Collector Current-mA VCE-Collector to Emitter Voltage-V

S11e, S22e-FREQUENCY 0.11

0.12 0.13 0.14
0.15
0.10 0.39
0.38 0.37 0.36
9 0.35 0.1
CONDITION VCE = 10 V 0.0 0.40 100
90 80 6
1 0.3 0.1
8 0.4 110 70 4
0.0 2 0.3 7
200 MHz Step
1.0
0.9

1.2
0.8

0.4 20 600 3 0.
1.4

07 18
0.7

1
0. 0.
1.6

43 32
0.
0.6

0.2
50
1.8

0
13
14 0.4 6

0. 31
2.0
0

19
0.

0.
4

0.5

T
EN 0.4
0.2 0
0.4 5

0
0.0

40
N

0.3
5

) MPO

0.4
( –Z–+–J–XTANCE CO
0.0TOR

0.6 3.0
0.2
4
RA

0.2
6
0
0.4

1
30
0.0 GENE

15

0.8
C

0.3
9
A

O
RE

4.0
0.2
3

E
0.02 WARD

1.0
ITIV

0.2
7
0.4

2.0 GHz
2
S

POS

6.0
8
1.0
REE

20
S TO

0.2
DEG

0.8
0.23
0.48

0.27
NGTH

3 S TOWAE OF REFLECTION COEFFCIENT IN

S11e
0.6
WAVELE

10
10
0.01

0.24

0.4
0.49

0.26

0.1

20
0.2
50
0.1

0.2

0.3

0.4

0.5

0.6
0.7
0.8
0.9
1.0

1.2

1.4
1.6
1.8
2.0

3.0

4.0

5.0

10

20

0.25
0.25
0
0
0

REACTANCE COMPONENT

(
R
––––
ZO
0.2 ) 0.2 GHz IC = 20 mA
50
20
0.02 RD LOAD
0.01

0.24
0.49

0.26

0.4
−10

0.1

S22e
10
0.6
GTH0 ANGL

0.23
0.48

0.27

0.2
0.8 IC = 5 mA
−20

IC = 20 mA
T
6

1.0
NEN

0.2 GHz
4 EL −1

5.0
0.2
7
0.0

0.2
N
0.4

1.0
E

2
P

8
M

4.0
)
CO
0.0WAV
50

AC −J––O–

0.8
−3

0.3
0.2
–Z
TA X
E

0.2 GHz
NC
1
6

0.2
(

0
−
0.4

1
9

0.6 3.0
RE

0.2 0
0. 5

E
0

0.4
0. 06 40

IV

IC = 5 mA
−4
5

0.3
0.

0
AT
4

−1

G 0.4
NE
0. 31
19
0.5
.
4

0.
0

−5
30
2.0
4

0
−1 0.
1.8

07 0.2 18
0.6

0. 3 0.
1.6

4 20 8 −6 32
0.
0.7

−1 0 0.1
1.4

0.0 2 7
0.8

0.3
1.2
0.9

1.0

0 −70 0.1
0.0
9 0.4 −11 6 3
1 −100 −80 0.15 0.3
0.4 0.10 −90
0.14
4
0.11 0.35
0.40 0.12 0.13
0.36
0.39 0.37
S21e-FREQUENCY
0.38
S12e-FREQUENCY
CONDITION VCE = 10 V CONDITION VCE = 10 V
IC = 20 mA IC = 20 mA

90° 90°
2.0 GHz
120° 60° 120° 60°

0.2 GHz
S12e
150° 30° 150° 30°
S21e

0.2 GHz

180° 0° 180° 0°
2.0 GHz 5 10 15 20 0.05 0.1 0.15 0.2 0.25

−150° −30° −150° −30°

−120° −60° −120° −60°

−90° −90°

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