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    N-Channel Powertrench Mosfet Kdb2532

    Uploaded by

    Francisco Filho
    This document provides specifications for an N-channel power MOSFET. Key specifications include an on-state resistance of 14mΩ maximum at 10V gate voltage and 33A drain current, total gate charge of 82nC maximum at 10V, and low reverse recovery time of 105ns and charge of 327nC. The MOSFET has a TO-263 package and is rated for continuous drain current of 79A at a case temperature of 25°C.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    N-Channel Powertrench Mosfet Kdb2532

    Uploaded by

    Francisco Filho
    33 views2 pages
    This document provides specifications for an N-channel power MOSFET. Key specifications include an on-state resistance of 14mΩ maximum at 10V gate voltage and 33A drain current, total gate charge of 82nC maximum at 10V, and low reverse recovery time of 105ns and charge of 327nC. The MOSFET has a TO-263 package and is rated for continuous drain current of 79A at a case temperature of 25°C.

    Original Description:

    transitor hexfet

    Original Title

    FDB2532-Kexin

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    © © All Rights Reserved

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    This document provides specifications for an N-channel power MOSFET. Key specifications include an on-state resistance of 14mΩ maximum at 10V gate voltage and 33A drain current, total gate charge of 82nC maximum at 10V, and low reverse recovery time of 105ns and charge of 327nC. The MOSFET has a TO-263 package and is rated for continuous drain current of 79A at a case temperature of 25°C.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    33 views2 pages

    N-Channel Powertrench Mosfet Kdb2532

    Uploaded by

    Francisco Filho
    This document provides specifications for an N-channel power MOSFET. Key specifications include an on-state resistance of 14mΩ maximum at 10V gate voltage and 33A drain current, total gate charge of 82nC maximum at 10V, and low reverse recovery time of 105ns and charge of 327nC. The MOSFET has a TO-263 package and is rated for continuous drain current of 79A at a case temperature of 25°C.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    SMD Type MOSFET

    N-Channel PowerTrench MOSFET


    KDB2532(FDB2532)

    TO-263 Unit: mm
    Features
    4.57-0.2
    +0.2

    +0.1
    1.27-0.1
    rDS(ON) = 14m (Typ.), VGS = 10V, ID = 33A 1.27-0.1
    +0.1

    Qg(tot) = 82nC (Typ.), VGS = 10V


    Low Miller Charge

    5.60
    +0.2
    8.7-0.2

    +0.2
    15.25-0.2
    Low QRR Body Diode 0.1max
    1.27-0.1
    +0.1

    UIS Capability (Single Pulse and Repetitive Pulse)

    +0.2
    5.28-0.2
    0.81-0.1
    +0.1

    +0.2
    2.54-0.2
    2.54 1 Gate

    2.54-0.2
    +0.2
    5.08 +0.1
    0.4 +0.2 2 Drain
    -0.1 -0.2
    3 Source

    Absolute Maximum Ratings Ta = 25


    Parameter Symbol Rating Unit
    Drain to source voltage VDSS 150 V
    Gate to source voltage VGSS 20 V
    Drain current-Continuous TC=25 79 A
    ID
    TA=25 8 A
    Power dissipation 310 W
    PD
    Derate above 25 2.07 W/
    Thermal Resistance Junction to Ambient RèJA 43 /W
    Channel temperature Tch 175
    Storage temperature Tstg -55 to +175

    1
    www.kexin.com.cn
    SMD Type MOSFET

    KDB2532(FDB2532)
    Electrical Characteristics Ta = 25
    Parameter Symbol Testconditons Min Typ Max Unit
    Drain to source breakdown voltage VDSS ID=250ìA VGS=0V 150 V
    VDS=120V,VGS=0 1
    Drain cut-off current IDSS A
    VDS=120V,VGS=0,TC=150 250
    Gate leakage current IGSS VGS= 20V 100 nA
    Gate threshold voltage VGS(th) VDS = VGS, ID = 250ìA 2.0 4.0 V
    VGS=10V,ID=33A 0.014 0.016
    Drain to source on-state resistance RDS(on) VGS=6V,ID=16A 0.016 0.024 Ù

    VGS=10V,ID=33A,TC=175 0.040 0.048


    Input capacitance Ciss 5870 pF
    Output capacitance Coss VDS=25V,VGS=0,f=1MHZ 615 pF
    Reverse transfer capacitance Crss 135 pF
    Total Gate Charge at 10V Qg(TOT) VGS = 0V to 10V 82 107 nC
    Threshold Gate Charge Qg(TH) VGS = 0V to 2V 11 14 nC
    Gate to Source Gate Charge Qgs VDS = 75V, 23 nC
    Gate Charge Threshold to Plateau Qgs2 Ig=1.0mA 13 nC
    Gate to Drain "Miller" Charge Qgd ID = 33A 19 nC
    Turn-On Time tON 69 ns
    Turn-On Delay Time td(ON) 16 ns
    Rise Time tr VDD = 75V, ID = 33A 30 ns
    Turn-Off Delay Time td(OFF) VGS = 10V, RGS = 3.6 39 ns
    Fall Time tf 17 ns
    Turn-Off Time tOFF 84 ns
    Reverse Recovery Time trr ISD = 33A, diSD/dt = 100A/ìs 105 ns
    Reverse Recovered Charge QRR ISD = 33A, diSD/dt = 100A/ìs 327 nC
    ISD = 33A 1.25 V
    Source to Drain Diode Voltage VSD
    ISD = 16A 1.0 V

    2
    www.kexin.com.cn

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