SMD Type Diodes

Schottky Diodes
SS1020 ~ SS10100
SOD-123 Unit:mm
2.7 +0.1
- 0.1 1.1 -+0.05
0.05

0.1
0.55 -+0.1
■ Features

0.1
1.6 -+0.1
● Fast switching speed
● Low power loss, high efficieucy

● Surface mount package ideally suited for autonatic insertion 3.7 -+0.1
0.1 0.1max
0.50
0.35

+0.05
0.1 -0.02
2

Top View
PIN DESCRIPTION
1 Cathode
2 Anode
Simplified outline SOD-123 and symbol

■ Absolute Maximum Ratings Ta = 25℃

Parameter Symbol SS1020 SS1030 SS1040 SS1060 SS10100 Unit

Repetitive Peak Reverse Voltage VRRM

Reverse Breakdown Voltage @ IR =500μA VBR 20 30 40 60 100

V
Reverse Voltage VR

Forward Voltage Ta=65℃ VF 0.55 0.7 0.85

Averaged Forward Current.Ta=75℃ IFAV 1

A
Peak Forward Surge Current @ t=8.3ms IFSM 30

Reverse Voltage Leakage Current IR 500 μA

Typical Junction Capacitance Cj 60 50 40 pF

Junction Temperature Tj 125

℃
Storage Temperature Tstg -55 to 125

■ Marking
NO. SS1020 SS1030 SS1040 SS1060 SS10100
Marking G2 G3 G4 G6 G10

1
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 SMD Type Diodes

Schottky Diodes
SS1020 ~ SS10100
■ Typical Characterisitics
10 4
AV E R A G E F O R WA R D R E C I T I F I E D

R E V E R S E C U R R E N T, A
T J 125 C
O

10
3

0.75
CURRENT AMPERES

10 2
T J 75 C
O

0.5
SINGLE PHASE HALF WAVE 60Hz 10
RESTSTIVE OR INDUCTIVE LOAD
P.C.B MOUNTED
0.25 ON 0.2x0.2 ,,(5.0x5.0mm)
T J 25 C
O
COPPER PAD AREAS
1

0 0.1
0 25 50 75 100 125 150 175 0 20 40 60

LEAD TEMPERATURE, C
O
REVERSE VOLTAGE,V R(V)

FIG. 1-FORWARD CURRENT DERATING CURVE FIG. 2-TYPICAL REVERSE CHARACTERISTIC

1000 20
I N S TA N TA N E O U S F O RWA R D C U R R E N T,

20-40V
10

20 - 40V
60V
CAPACITANCE,(p F)

100
AMPERES

60V

100V
1.0
10 100V
TJ = 25 C
O

PulseWidth= 300 ms
T J=25 C
O
1%Duty Cycle

0.1
0.1 .5 .7 .8 .9 1.1 1.3 1.5 1.7 1.9
0 10 20 30 40
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
V R,REVERSE VOLTAGE(VOLTS)

FIG.3 -TYPICAL JUNCTION CHATACTERISTIC FIG. 4-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS

2
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