< Low Noise GaAs HEMT >

MGF4938AM
4pin flat lead package
DESCRIPTION
The MGF4938AM super-low noise InGaAs HEMT (High Electron Mobility
Transistor) is designed for use in S to Ku band amplifiers.
The 4pin flat lead package is small-thin size, and offers high cost
Outline Drawing
performance.

FEATURES
Very Low noise figure @ f=12GHz
NFmin. = 0.32dB (Typ.)
Fig.1
High associated gain @ f=12GHz
Gs = 12.5dB (Typ.)

APPLICATION
S to Ku band low noise amplifiers

QUALITY GRADE
MITSUBISHI Proprietary
GG
Not to be reproduced or disclosed without
permission by Mitsubishi Electric
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10mA

ORDERING INFORMATION
Tape & reel 15000pcs/reel

RoHS COMPLIANT
MGF4938AM is a RoHS2 compliant product.

ABSOLUTE MAXIMUM RATINGS (Ta=25C )

Symbol Parameter Ratings Unit
VGDO Gate to drain voltage -3 V
VGSO Gate to source voltage -3 V
VDS Drain to source voltage 3 V
ID Drain current IDSS mA
PT Total power dissipation 50 mW
Tch Channel temperature 125 C
Tstg Storage temperature -55 to +125 C
Top Operation temperature -55 to +125 C

ELECTRICAL CHARACTERISTICS (Ta=25C )

Symbol Parameter Test conditions Limits Unit
MIN. TYP. MAX
V(BR)GDO Gate to drain breakdown voltage IG=-10A -3.5 -- -- V
IGSS Gate to source leakage current VGS=-2V,VDS=0V -- -- 50 A
IDSS Saturated drain current VGS=0V,VDS=2V 12 -- 60 mA
VGS(off) Gate to source cut-off voltage VDS=2V,ID=500A -0.1 -- -1.5 V
Gs Associated gain VDS=2V, 11.0 12.5 -- dB
NFmin. Minimum noise figure ID=10mA,f=12GHz -- 0.32 0.47 dB
Note: Gs and NFmin. are tested with sampling inspection.
Thermal resistance (Rth) of this product: 800 deg.C/W.

Publication Date :Jul., 2019 
CTHA‐190717‐05 
1
< Low Noise GaAs HEMT >
MGF4938AM
4pin flat lead package

Fig.1 Drain lead (③) width is always at least 0.03mm

wider than that of other 3 leads(① and ②)
2.10 ±0.1
1.30 ±0.05
(0.65) (0.65)
+0.1 +0.1
0.30 -0.05 0.30 -0.05

② ①

Top
±0.1

±0.1

L □
2.05

1.25

③ ② +0.05
+0.1 +0.1 0.11 -0
0.40 -0.05 0.30 -0.05

(0.60) (0.65)

1.25 ±0.05
0.49 ±0.05

Side

③ ②
Unit: mm
Bottom

① Gate
(0.85)

② Source
③ Drain

② ①

(GD-30)

Publication Date : Jul., 2019 
2
< Low Noise GaAs HEMT >
MGF4938AM
4pin flat lead package

S PARAMETERS
(VDS=2V, ID=10mA, Ta=room temperature)
Freq. S11 S21 S12 S22
(GHz) (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)
6 0.785 -85.7 5.150 90.9 0.081 27.7 0.491 -75.4
7 0.701 -104.9 5.070 74.2 0.091 16.1 0.439 -90.8
8 0.623 -126.4 4.886 57.6 0.101 3.4 0.388 -108.7
9 0.536 -148.2 4.592 42.1 0.102 -8.7 0.331 -125.0
10 0.465 -171.2 4.287 27.9 0.100 -19.6 0.272 -139.2
11 0.445 166.4 4.079 14.4 0.101 -28.3 0.244 -156.1
12 0.443 143.3 3.872 0.9 0.102 -36.9 0.223 -174.1
13 0.472 119.8 3.657 -13.6 0.102 -47.0 0.209 164.7
14 0.510 99.8 3.462 -27.2 0.101 -55.5 0.195 146.3
15 0.553 82.2 3.262 -40.6 0.100 -65.5 0.194 125.5
16 0.603 65.9 3.011 -56.3 0.098 -73.0 0.220 104.1
17 0.640 52.4 2.749 -69.7 0.095 -80.9 0.230 85.9
18 0.676 40.4 2.485 -82.2 0.095 -88.1 0.256 68.1

Noise Parameter
(VDS=2V, ID=10mA, Ta=room temperature)

Freq. NFmin Γopt Rn/50

(GHz) (dB) (mag) (ang) ( Ω)
6 0.19 0.713 39.7 0.198
7 0.20 0.646 55.8 0.182
8 0.21 0.580 74.1 0.149
9 0.24 0.517 94.0 0.123
10 0.26 0.458 115.6 0.096
11 0.29 0.408 138.6 0.068
12 0.32 0.368 162.4 0.057
13 0.34 0.340 -173.2 0.044
14 0.38 0.326 -149.0 0.040
15 0.40 0.328 -125.0 0.047
16 0.43 0.346 -101.8 0.068 Measurement plane (2.58mm)
17 0.47 0.382 -79.5 0.084
18 0.50 0.437 -57.7 0.116 Board: r=3.38
Thickness: 0.508mm
(Rogers RO4003C)
(6-φ0.3: through-hole)

Note: We are ready to provide nonlinear model for ADS and MWO users. If you are interested, please contact our sales offices.

Publication Date : Jul., 2019 
3
< Low Noise GaAs HEMT >
MGF4938AM
4pin flat lead package

S PARAMETERS
(VDS=2V, ID=10mA, Ta=room temperature)
Freq. S11 S21 S12 S22
(GHz) (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)
6 0.739 -81.6 4.930 89.5 0.076 34.2 0.485 -67.4
7 0.648 -99.0 4.810 73.6 0.086 24.8 0.430 -79.4
8 0.564 -118.4 4.656 57.9 0.097 14.4 0.372 -93.0
9 0.469 -139.2 4.402 43.0 0.098 4.6 0.306 -107.0
10 0.389 -163.2 4.127 29.0 0.098 -4.5 0.236 -119.2
11 0.369 172.4 3.949 15.7 0.101 -11.2 0.196 -137.1
12 0.373 146.3 3.772 2.1 0.104 -18.0 0.166 -159.1
13 0.416 120.8 3.557 -12.5 0.107 -26.8 0.157 170.7
14 0.459 100.8 3.352 -25.4 0.107 -34.0 0.155 146.3
15 0.510 83.8 3.172 -38.3 0.106 -42.3 0.176 120.5
16 0.574 69.3 2.971 -53.5 0.108 -48.1 0.235 101.1
17 0.618 57.5 2.739 -66.7 0.107 -54.3 0.272 88.2
18 0.665 46.7 2.515 -79.7 0.110 -61.2 0.313 74.1

Noise Parameter
(VDS=2V, ID=10mA, Ta=room temperature)

Freq. NFmin. opt Rn/50

(GHz) (dB) (mag) (ang) () 2.58mm
Measurement Plane
6 0.23 0.664 31.0 0.201
7 0.24 0.586 49.4 0.185
8 0.25 0.510 70.4 0.151
9 0.28 0.440 93.6 0.125
10 0.29 0.377 118.6 0.091
11 0.31 0.327 144.6 0.072
12 0.34 0.291 171.4 0.063
13 0.36 0.273 -162.2 0.059
14 0.40 0.275 -136.0 0.054
15 0.42 0.299 -112.0 0.060
16 0.45 0.344 -89.4 0.081
17 0.48 0.417 -69.4 0.112
18 0.51 0.516 -51.0 0.143
Board: r=3.38
Thickness: 0.508mm
(Rogers RO4003C)
(4-φ0.3: through-hole)
Note: We are ready to provide nonlinear model for ADS and MWO users. If you are interested, please contact our sales offices.

Publication Date : Jul., 2019 
4
< Low Noise GaAs HEMT >
MGF4938AM
4pin flat lead package

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Publication Date : Jul., 2019 
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