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    Kexin-2sb772-P C489322

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    alrehman3232

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    Kexin-2sb772-P C489322

    Uploaded by

    alrehman3232
    6 views3 pages

    Original Title

    2002251132_KEXIN-2SB772-P_C489322

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    6 views3 pages

    Kexin-2sb772-P C489322

    Uploaded by

    alrehman3232

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    SMD Type Transistors

    PNP Transistors
    2SB772

    ■ Features
    ● PNP transistor High current output up to 3A 1.70 0.1

    ● Low Saturation Voltage


    ● Complement to 2SD882

    0.42 0.1 0.46 0.1

    1.Base
    2.Collector
    3.Emitter

    ■ Absolute Maximum Ratings Ta = 25℃


    Parameter Symbol Rating Unit
    Collector to Base Voltage VCBO -40 V
    Collector to Emitter Voltage VCEO -30 V
    Emitter to Base Voltage VEBO -6 V
    Collector Current to Continuous IC -3 A
    Collector Dissipation Pc 0.5 W
    Junction Temperature TJ 150 ℃
    Storage Temperature Tstg -55 to 150 ℃

    ■ Electrical Characteristics Ta = 25℃


    Parameter Symbol Test Conditions Min Typ Max Unit
    Collector-base breakdown voltage VCBO Ic=-100uA ,IE=0 -40 V
    Collector-emitter breakdown voltage VCEO IC= -10 mA , IB=0 -30 V
    Emitter-base breakdown voltage VEBO IE= -100 uA ,IC=0 -6 V
    Collector cut-off current ICBO VCB=-40 V , IE=0 -1 μA
    Emitter cut-off current IEBO VEB=-6V , IC=0 -1 μA
    VCE= -2V, IC= -1A 60 400
    DC current gain hFE
    VCE=-2V, IC= -100mA 32
    Collector-emitter saturation voltage VCE(sat) IC=-2A, IB=- 0.2A -0.5 V
    Base-emitter saturation voltage VBE(sat) IC=-2A, IB= -0.2A -1.5 V
    Transition frequency fT VCE=-5 V, IC=-0.1mA,f = 10MHz 50 MHz

    ■ Classification of hfe(1)
    Marking 772*
    Range R Q P E
    hFE 60~120 100~200 160~320 200~400

    1
    www.kexin.com.cn
    SMD Type Transistors
    2SB772

    Typical Characteristics

    2 www.kexin.com.cn
    SMD Type Transistors
    SMD Type

    2SB772

    3
    www.kexin.com.cn

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