128M (8Mx16) GDDR SDRAM: HY5DU281622ET

HY5DU281622ET
128M(8Mx16) GDDR SDRAM

HY5DU281622ET
This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any respon-
sibility for use of circuits described. No patent licenses are implied.
Rev. 0.5 / Jan. 2005 1
HY5DU281622ET
Revision History
Revision No. History Draft Date Remark
0.1 Defined target spec. July 2003
1) Insert Overshoot/Undershoot Specification

0.2 Oct. 2003
2) Insert tDSS/tDSH Parameter
0.3 tPDEX value Change Mar. 2004
0.4 tRC_APCG changed to 12 clock from 11 clock at 166Mhz speed bin Oct. 2004
0.5 166Mhz speed bin delete, AC parameter change (tRC_APCG at 200Mhz) Jan. 2005
Rev. 0.5 / Jan. 2005 2

HY5DU281622ET
DESCRIPTION
The Hynix HY5DU281622ET is a 134,217,728-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for
the point-to-point applications which require high densities and high bandwidth.
The Hynix 8Mx16 DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the
clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the /CK), Data,
Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are inter-
nally pipelined and 2-bit prefetched to achieve very high bandwidth. All input and output voltage levels are compatible
with SSTL_2.
FEATURES
• 2.8V +/- 0.1V VDD and VDDQ power supply rising and falling edges of the data strobe
supports 400/375/350/333/300MHz
• All addresses and control inputs except Data, Data
• 2.5V +/- 5% VDD and VDDQ power supply strobes and Data masks latched on the rising edges
supports 275/250/200/166MHz of the clock
• All inputs and outputs are compatible with SSTL_2 • Write mask byte controls by DM (UDM,LDM)
interface
• Programmable /CAS Latency 5, 4 and 3 are sup-
• JEDEC Standard 400 mil x 875 mil 66 Pin TSOP II, ported
with 0.65mm pin pitch
• Programmable Burst Length 2, 4 and 8 with both
• Fully differential clock inputs (CK, /CK) operation sequential and interleave mode
• Double data rate interface • Internal 4 bank operation with single pulsed /RAS
• Source synchronous - data transaction aligned to • tRAS Lock-Out function are supported
bidirectional data strobe (UDQS,LDQS)
• Auto refresh and self refresh are supported
• Data outputs on DQS edges when read (edged DQ)
• 4096 refresh cycles / 32ms
Data inputs on DQS centers when write (centered
DQ) • Full strength, Half strength and Weak Impedance
driver options controlled by EMRS
• Data(DQ) and Write masks(DM) latched on the both
ORDERING INFORMATION
Power Clock
Part No. Max Data Rate interface Package
Supply Frequency
HY5DU281622ET-25 400MHz 800Mbps/pin

HY5DU281622ET-28 VDD/VDDQ=2.8V 350MHz 700Mbps/pin
HY5DU281622ET-30 333MHz 666Mbps/pin 400 x 875mil 2
SSTL_2
HY5DU281622ET-33 300MHz 600Mbps/pin 66 Pin TSOP II
HY5DU281622ET-4 VDD/VDDQ=2.5V 250MHz 500Mbps/pin
Rev. 0.5 / Jan. 2005 3

HY5DU281622ET
PIN CONFIGURATION (Top View)
VDD 1 66 VSS
DQ0 2 65 DQ15
VDDQ 3 64 VSSQ
DQ1 4 63 DQ14
DQ2 5 62 DQ13
VSSQ 6 61 VDDQ
DQ3 7 60 DQ12
DQ4 8 59 DQ11
VDDQ 9 58 VSSQ
DQ5 10 57 DQ10
DQ6 11 56 DQ9
VSSQ 12 55 VDDQ
DQ7 13 54 DQ8
NC 14 53 NC
VDDQ 15 400mil X 875mil 52 VSSQ
LDQS 16 51 UDQS
66pin TSOP -II NC
NC 17 50
VDD 18 0.65mm pin pitch 49 VREF
NC 19 48 VSS
LDM 20 47 UDM
/WE 21 46 /CK
/CAS 22 45 CK
/RAS 23 44 CKE
/CS 24 43 NC
NC 25 42 NC
BA0 26 41 A11
BA1 27 40 A9
A10/AP 28 39 A8
A0 29 38 A7
A1 30 37 A6
A2 31 36 A5
A3 32 35 A4
VDD 33 34 VSS
ROW AND COLUMN ADDRESS TABLE
ITEMS 8Mx16
Organization 2M x 16 x 4banks
Row Address A0 - A11
Column Address A0-A8
Bank Address BA0, BA1
Auto Precharge Flag A10
Refresh 4K
Rev. 0.5 / Jan. 2005 4

HY5DU281622ET
PIN DESCRIPTION
PIN TYPE DESCRIPTION
Clock: CK and /CK are differential clock inputs. All address and control input signals are
CK, /CK Input sampled on the crossing of the positive edge of CK and negative edge of /CK. Output
(read) data is referenced to the crossings of CK and /CK (both directions of crossing).
Clock Enable: CKE HIGH activates, and CKE LOW deactivates internal clock signals, and
device input buffers and output drivers. Taking CKE LOW provides PRECHARGE POWER
DOWN and SELF REFRESH operation (all banks idle), or ACTIVE POWER DOWN (row
ACTIVE in any bank). CKE is synchronous for POWER DOWN entry and exit, and for SELF
CKE Input REFRESH entry and exit. CKE is asynchronous for output disable. CKE must be main-
tained high throughout READ and WRITE accesses. Input buffers, excluding CK, /CK and
CKE are disabled during POWER DOWN. Input buffers, excluding CKE are disabled during
SELF REFRESH. CKE is an SSTL_2 input, but will detect an LVCMOS LOW level after Vdd
is applied.
Chip Select : Enables or disables all inputs except CK, /CK, CKE, DQS and DM. All com-
/CS Input mands are masked when CS is registered high. CS provides for external bank selection on
systems with multiple banks. CS is considered part of the command code.
Bank Address Inputs: BA0 and BA1 define to which bank an ACTIVE, Read, Write or PRE-
BA0, BA1 Input
CHARGE command is being applied.
Address Inputs: Provide the row address for ACTIVE commands, and the column address
and AUTO PRECHARGE bit for READ/WRITE commands, to select one location out of the
memory array in the respective bank. A10 is sampled during a precharge command to
determine whether the PRECHARGE applies to one bank (A10 LOW) or all banks (A10
A0 ~ A11 Input
HIGH). If only one bank is to be precharged, the bank is selected by BA0, BA1. The
address inputs also provide the op code during a MODE REGISTER SET command. BA0
and BA1 define which mode register is loaded during the MODE REGISTER SET command
(MRS or EMRS).
Command Inputs: /RAS, /CAS and /WE (along with /CS) define the command being
/RAS, /CAS, /WE Input
entered.
Input Data Mask: DM is an input mask signal for write data. Input data is masked when
DM is sampled HIGH along with that input data during a WRITE access. DM is sampled
UDM, LDM Input on both edges of DQS. Although DM pins are input only, the DM loading matches the DQ
and DQS loading. LDM corresponds to the data on DQ0-Q7; UDM corresponds to the data
on DQ8-Q15
Data Strobe: Output with read data, input with write data. Edge aligned with read data,
UDQS, LDQS I/O centered in write data. Used to capture write data. LDQS corresponds to the data on
DQ0-Q7; UDQS corresponds to the data on DQ8-Q15
DQ0 ~ DQ15 I/O Data input / output pin : Data Bus
VDD/VSS Supply Power supply for internal circuits and input buffers.
VDDQ/VSSQ Supply Power supply for output buffers for noise immunity.
VREF Supply Reference voltage for inputs for SSTL interface.
NC NC No connection.
Rev. 0.5 / Jan. 2005 5

HY5DU281622ET
FUNCTIONAL BLOCK DIAGRAM
4Banks x 2Mbit x 16 I/O Double Data Rate Synchronous DRAM
16
Write Data Register DS
Input Buffer
2-bit Prefetch Unit
32
CLK Bank
Control 2Mx16/Bank0
/CLK
2-bit Prefetch Unit

CKE
Sense AMP
Output Buffer
2Mx16/Bank1
/CS 32 16
Command
/RAS Decoder 2Mx16/Bank2
/CAS DQ[0:15]
/WE 2Mx16/Bank3
LDM
UDM Mode Row
Register Decoder
Column Decoder
LDQS, UDQS
A0~A11
Data Strobe
CLK_DLL Transmitter
Address
Buffer Column Address
Counter LDQS Data Strobe
UDQS Receiver
BA0, BA1 CLK DLL
/CLK Block
Mode
Register
Rev. 0.5 / Jan. 2005 6

HY5DU281622ET
SIMPLIFIED COMMAND TRUTH TABLE
A10/
Command CKEn-1 CKEn CS RAS CAS WE ADDR BA Note
AP
Extended Mode Register Set H X L L L L OP code 1,2
Mode Register Set H X L L L L OP code 1,2
Device Deselect H X X X
H X X 1
No Operation L H H H
Bank Active H X L L H H RA V 1
Read L 1
H X L H L H CA V
Read with Autoprecharge H 1,3
Write L 1
H X L H L L CA V
Write with Autoprecharge H 1,4
Precharge All Banks H X 1,5

H X L L H L X
Precharge selected Bank L V 1
Read Burst Stop H X L H H L X 1
Auto Refresh H H L L L H X 1
Entry H L L L L H 1
Self Refresh H X X X X
Exit L H 1
L H H H
H X X X 1
Entry H L
Precharge Power L H H H 1
X
Down Mode H X X X 1
Exit L H
L H H H 1
H X X X 1
Active Power Entry H L
L V V V X 1
Down Mode
Exit L H X 1
( H=Logic High Level, L=Logic Low Level, X=Don’t Care, V=Valid Data Input, OP Code=Operand Code, NOP=No Operation )
Note :
1. UDM, LDM states are Don’t Care. Refer to below Write Mask Truth Table.(note 6)
2. OP Code(Operand Code) consists of A0~A11 and BA0~BA1 used for Mode Register setting during Extended MRS or MRS. Before
entering Mode Register Set mode, all banks must be in a precharge state and MRS command can be issued after tRP period from
Prechagre command.
3. If a Read with Auto-precharge command is detected by memory component in CK(n), then there will be no command presented
to activate bank until CK(n+BL/2+tRP).
4. If a Write with Auto-precharge command is detected by memory component in CK(n), then there will be no command presented
to activate bank until CK(n+BL/2+1+tDPL+tRP). Last Data-In to Prechage delay(tDPL) which is also called Write Recovery
Time(tWR) is needed to guarantee that the last data have been completely written.
5. If A10/AP is High when Precharge command being issued, BA0/BA1 are ignored and all banks are selected to be precharged.
6. In here, Don’t Care means logical value only, it doesn’t mean ’Don’t care for DC level of each signals’. DC level should be out of
VIHmin ~ VILmax
Rev. 0.5 / Jan. 2005 7

HY5DU281622ET
WRITE MASK TRUTH TABLE
/CS, /RAS, A8/

Function CKEn-1 CKEn DM ADDR BA Note
/CAS, /WE AP
Data Write H X X L X 1,2,3
Data-In Mask H X X H X 1,2,3
Note :
1. Write Mask command masks burst write data with reference to UDQS/LDQS and it is not related with read data.
2. LDM corresponds to the data on DQ0-Q7 and UDM corresponds to the data on DQ8-Q15
VIHmin ~ VILmax
Rev. 0.5 / Jan. 2005 8

HY5DU281622ET
OPERATION COMMAND TRUTH TABLE - I
Current
/CS /RAS /CAS /WE Address Command Action
State
H X X X X DSEL NOP or power down3
L H H H X NOP NOP or power down3
L H H L X BST ILLEGAL4
L H L H BA, CA, AP READ/READAP ILLEGAL4

IDLE L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL4
L L H H BA, RA ACT Row Activation
L L H L BA, AP PRE/PALL NOP
L L L H X AREF/SREF Auto Refresh or Self Refresh5

L L L L OPCODE MRS Mode Register Set
H X X X X DSEL NOP
L H H H X NOP NOP
L H L H BA, CA, AP READ/READAP Begin read : optional AP6

ROW
L H L L BA, CA, AP WRITE/WRITEAP Begin write : optional AP6
ACTIVE
L L H H BA, RA ACT ILLEGAL4
L L H L BA, AP PRE/PALL Precharge7
L L L H X AREF/SREF ILLEGAL11
L L L L OPCODE MRS ILLEGAL11

H X X X X DSEL Continue burst to end
L H H H X NOP Continue burst to end
L H H L X BST Terminate burst
L H L H BA, CA, AP READ/READAP Term burst, new read:optional AP8
READ L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL

L L H L BA, AP PRE/PALL Term burst, precharge

WRITE L H H L X BST ILLEGAL4
L H L H BA, CA, AP READ/READAP Term burst, new read:optional AP8

L H L L BA, CA, AP WRITE/WRITEAP Term burst, new write:optional AP
Rev. 0.5 / Jan. 2005 9

HY5DU281622ET
OPERATION COMMAND TRUTH TABLE - II
Current
State

L L H L BA, AP PRE/PALL Term burst, precharge
WRITE

L H H L X BST ILLEGAL

READ
WITH L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL10
AUTOPRE-
CHARGE L L H H BA, RA ACT ILLEGAL4,10
L L H L BA, AP PRE/PALL ILLEGAL4,10

L H H L X BST ILLEGAL

WRITE
AUTOPRE- L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL10
CHARGE
L L H H BA, RA ACT ILLEGAL4,10

H X X X X DSEL NOP-Enter IDLE after tRP
L H H H X NOP NOP-Enter IDLE after tRP
L H L H BA, CA, AP READ/READAP ILLEGAL4,10

PRE- L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL4,10
CHARGE
L L H L BA, AP PRE/PALL NOP-Enter IDLE after tRP
Rev. 0.5 / Jan. 2005 10

HY5DU281622ET
OPERATION COMMAND TRUTH TABLE - III
Current
State
H X X X X DSEL NOP - Enter ROW ACT after tRCD

L H H H X NOP NOP - Enter ROW ACT after tRCD
L H L H BA, CA, AP READ/READAP ILLEGAL4,10

ROW L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL4,10
ACTIVATING
L L H H BA, RA ACT ILLEGAL4,9,10

H X X X X DSEL NOP - Enter ROW ACT after tWR
L H H H X NOP NOP - Enter ROW ACT after tWR
L H L H BA, CA, AP READ/READAP ILLEGAL
WRITE L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL
RECOVERING

H X X X X DSEL NOP - Enter precharge after tDPL
L H H H X NOP NOP - Enter precharge after tDPL
WRITE L H L H BA, CA, AP READ/READAP ILLEGAL4,8,10

RECOVERING
WITH L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL4,10
AUTOPRE-
CHARGE

H X X X X DSEL NOP - Enter IDLE after tRC
L H H H X NOP NOP - Enter IDLE after tRC
REFRESHING
Rev. 0.5 / Jan. 2005 11

HY5DU281622ET
OPERATION COMMAND TRUTH TABLE - IV
Current
State
L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL11
WRITE L L H L BA, AP PRE/PALL ILLEGAL11

H X X X X DSEL NOP - Enter IDLE after tMRD
L H H H X NOP NOP - Enter IDLE after tMRD

MODE
REGISTER L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL11
ACCESSING
L L H L BA, AP PRE/PALL ILLEGAL11
Note :
1. H - Logic High Level, L - Logic Low Level, X - Don’t Care, V - Valid Data Input, BA - Bank Address, AP - AutoPrecharge Address,
CA - Column Address, RA - Row Address, NOP - NO Operation.(see note 12)
2. All entries assume that CKE was active(high level) during the preceding clock cycle.
3. If both banks are idle and CKE is inactive(low level), then in power down mode.
4. Illegal to bank in specified state. Function may be legal in the bank indicated by Bank Address(BA) depending on the state of that
bank.
5. If both banks are idle and CKE is inactive(low level), then self refresh mode.
6. Illegal if tRCD is not met.
7. Illegal if tRAS is not met.
8. Must satisfy bus contention, bus turn around, and/or write recovery requirements.
9. Illegal if tRRD is not met.
10. Illegal for single bank, but legal for other banks in multi-bank devices.
11. Illegal for all banks.
VIHmin ~ VILmax
Rev. 0.5 / Jan. 2005 12

HY5DU281622ET
CKE FUNCTION TRUTH TABLE
Current CKEn-
CKEn /CS /RAS /CAS /WE /ADD Action
State 1
H X X X X X X INVALID
L H H X X X X Exit self refresh, enter idle after tSREX
L H L H H H X Exit self refresh, enter idle after tSREX
SELF
L H L H H L X ILLEGAL
REFRESH1
L H L H L X X ILLEGAL
L H L L X X X ILLEGAL
L L X X X X X NOP, continue self refresh
H X X X X X X INVALID
L H H X X X X Exit power down, enter idle
L H L H H H X Exit power down, enter idle
POWER
L H L H H L X ILLEGAL
DOWN2
L H L H L X X ILLEGAL
L H L L X X X ILLEGAL
L L X X X X X NOP, continue power down mode
H H X X X X X See operation command truth table
H L L L L H X Enter self refresh
H L H X X X X Exit power down
H L L H H H X Exit power down
ALL BANKS
H L L H H L X ILLEGAL
IDLE4
H L L H L X X ILLEGAL
H L L L H X X ILLEGAL
H L L L L L X ILLEGAL
L L X X X X X NOP
H H X X X X X See operation command truth table
ANY STATE
OTHER H L X X X X X ILLEGAL5
THAN L H X X X X X INVALID
ABOVE
L L X X X X X INVALID
Note :
When CKE=L, all DQ and UDQS/LDQS should be in Hi-Z state.
1. CKE and /CS must be kept high for a minimum of 200 stable input clocks before issuing any command.
2. All commands can be stored after 2 clocks from low to high transition of CKE.
3. Illegal, if CK is suspended or stopped during the power down mode.
4. Self refresh can be asserted only from the all banks idle state.
5. Disabling CK may cause malfunction of any banks which are in active state.
Rev. 0.5 / Jan. 2005 13

HY5DU281622ET
SIMPLIFIED STATE DIAGRAM
MRS SREF
MODE
SELF
REGISTER IDLE
REFRESH
SET SREX
PDEN
PDEX AREF
POWER ACT AUTO

DOWN REFRESH
POWER
DOWN PDEN
BST
PDEX BANK
ACTIVE
READ
WRITE READ
READAP
PRE(PALL)
WRITE READ
WITH WITH READAP
WRITE READ
WRITEAP AUTOPRE- AUTOPRE-
CHARGE CHARGE WRITEAP
WRITE
PRE(PALL)
PRE(PALL)
PRE-
CHARGE
POWER-UP Command Input

Automatic Sequence
POWER APPLIED
Rev. 0.5 / Jan. 2005 14

HY5DU281622ET
POWER-UP SEQUENCE AND DEVICE INITIALIZATION
DDR SDRAMs must be powered up and initialized in a predefined manner. Operational procedures other than those
specified may result in undefined operation. Except for CKE, inputs are not recognized as valid until after VREF is
applied. CKE is an SSTL_2 input, but will detect an LVCMOS LOW level after VDD is applied. Maintaining an LVCMOS
LOW level on CKE during power-up is required to guarantee that the DQ and DQS outputs will be in the High-Z state,
where they will remain until driven in normal operation (by a read access). After all power supply and reference volt-
ages are stable, and the clock is stable, the DDR SDRAM requires a 200µs delay prior to applying an executable com-
mand.
Once the 200µs delay has been satisfied, a DESELECT or NOP command should be applied, and CKE should be
brought HIGH. Following the NOP command, a PRECHARGE ALL command should be applied. Next a EXTENDED
MODE REGISTER SET command should be issued for the Extended Mode Register, to enable the DLL, then a MODE
REGISTER SET command should be issued for the Mode Register, to reset the DLL, and to program the operating
parameters. After the DLL reset, tXSRD(DLL locking time) should be satisfied for read command. After the Mode Reg-
ister set command, a PRECHARGE ALL command should be applied, placing the device in the all banks idle state.
Once in the idle state, two AUTO REFRESH cycles must be performed. Additionally, a MODE REGISTER SET command
for the Mode Register, with the reset DLL bit deactivated low (i.e. to program operating parameters without resetting
the DLL) must be performed. Following these cycles, the DDR SDRAM is ready for normal operation.
1. Apply power - VDD, VDDQ, VTT, VREF in the following power up sequencing and attempt to maintain CKE at LVC-
MOS low state. (All the other input pins may be undefined.)
No power sequencing is specified during power up or power down given the following cirteria :
• VDD and VDDQ are driven from a single power converter output.
• VTT is limited to 1.4025V (reflecting VDDQ(max)/2 + 50mV VREF variation + 40mV VTT variation).
• VREF tracks VDDQ/2.
• If the above criteria cannot be met by the system design, then the following sequencing and voltage relation-
ship must be adhered to during power up :
Voltage description Sequencing Voltage relationship to avoid latch-up
VDDQ After or with VDD < VDD + 0.3V
VTT After or with VDDQ < VDDQ + 0.3V
VREF After or with VDDQ < VDDQ + 0.3V
2. Start clock and maintain stable clock for a minimum of 200µsec.
3. After stable power and clock, apply NOP or DESELECT conditionS and take CKE high.
4. Following the NOP command, a PRECHARGE ALL command should be applied
5. Issue Extended Mode Register Set (EMRS) to enable DLL.
6. Issue Mode Register Set (MRS) to reset DLL and set device to idle state with bit A8=high. (An additional 200
cycles(tXSRD) of clock are required for locking DLL)
7. Issue Precharge commands for all banks of the device.
8. Issue 2 or more Auto Refresh commands.
Rev. 0.5 / Jan. 2005 15

HY5DU281622ET
9. Issue a Mode Register Set command to initialize the mode register with bit A8 = Low.
Power-Up Sequence
VDD
VDDQ
tVTD
VTT
VREF
/CLK
CLK
tIS tIH
LVCMOS Low Level
CKE
CMD NOP PRE EMRS MRS NOP PRE AREF MRS ACT RD
DM
ADDR CODE CODE CODE CODE CODE
A10 CODE CODE CODE CODE CODE
BA0, BA1 CODE CODE CODE CODE CODE
DQS
DQ'S
T=200usec tRP tMRD tMRD tRP tRFC tMRD
tXSRD*
Power UP EMRS Set MRS Set

Precharge All MRS Set Precharge All 2 or more Non-Read READ
VDD and CK stable (with A8=L)
Reset DLL Auto Refresh Command
(with A8=H)
* 200 cycle(tXSRD) of CK are required (for DLL locking) before Read Command
Rev. 0.5 / Jan. 2005 16

HY5DU281622ET
MODE REGISTER SET (MRS)
The mode register is used to store the various operating modes such as /CAS latency, addressing mode, burst length,
burst type, test mode, DLL reset. The mode register is program via MRS command. This command is issued by the low
signals of /RAS, /CAS, /CS, /WE and BA0. This command can be issued only when all banks are in idle state and CKE
must be high at least one cycle before the Mode Register Set Command can be issued. Two cycles are required to write
the data in mode register. During the the MRS cycle, any command cannot be issued. Once mode register field is
determined, the information will be held until resetted by another MRS command.
BA1 BA0 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
0 0 RFU* DR TM CAS Latency BT Burst Length
BA0 MRS Type A7 Test Mode
0 MRS 0 Normal
1 EMRS Vendor
1
test mode
Burst Length
A2 A1 A0
A8 DLL Reset Sequential Interleave
0 No 0 0 0 Reserved Reserved
1 Yes 0 0 1 2 2
0 1 0 4 4
0 1 1 8 8
A6 A5 A4 CAS Latency
1 0 0 Reserved Reserved
0 0 0 Reserved
0 0 1 Reserved
0 1 0 Reserved
0 1 1 3
1 0 0 4
1 0 1 5 A3 Burst Type
1 1 0 Reserved 0 Sequential
1 1 1 Reserved 1 Interleave
* All bits in RFU address fields must be programmed to Zero, all other states are reserved for future usage.
And, if MRS/EMRS are programmed with ‘Reserved’ code, it could be the cause of mal-function.
Rev. 0.5 / Jan. 2005 17

HY5DU281622ET
BURST DEFINITION
Burst Length Starting Address (A2,A1,A0) Sequential Interleave
XX0 0, 1 0, 1
2
XX1 1, 0 1, 0
X00 0, 1, 2, 3 0, 1, 2, 3
X01 1, 2, 3, 0 1, 0, 3, 2
4
X10 2, 3, 0, 1 2, 3, 0, 1
X11 3, 0, 1, 2 3, 2, 1, 0
000 0, 1, 2, 3, 4, 5, 6, 7 0, 1, 2, 3, 4, 5, 6, 7
001 1, 2, 3, 4, 5, 6, 7, 0 1, 0, 3, 2, 5, 4, 7, 6
010 2, 3, 4, 5, 6, 7, 0, 1 2, 3, 0, 1, 6, 7, 4, 5
011 3, 4, 5, 6, 7, 0, 1, 2 3, 2, 1, 0, 7, 6, 5, 4
8
100 4, 5, 6, 7, 0, 1, 2, 3 4, 5, 6, 7, 0, 1, 2, 3
101 5, 6, 7, 0, 1, 2, 3, 4 5, 4, 7, 6, 1, 0, 3, 2
110 6, 7, 0, 1, 2, 3, 4, 5 6, 7, 4, 5, 2, 3, 0, 1
111 0, 1, 2, 3, 4, 5, 6, 7 7, 6, 5, 4, 3, 2, 1, 0
BURST LENGTH & TYPE
Read and write accesses to the DDR SDRAM are burst oriented, with the burst length being programmable. The burst
length determines the maximum number of column locations that can be accessed for a given Read or Write com-
mand. Burst lengths of 2, 4 or 8 locations are available for both the sequential and the interleaved burst types.
Reserved states should not be used, as unknown operation or incompatibility with future versions may result.
When a Read or Write command is issued, a block of columns equal to the burst length is effectively selected. All
accesses for that burst take place within this block, meaning that the burst wraps within the block if a boundary is
reached. The block is uniquely selected by A1-Ai when the burst length is set to two, by A2-Ai when the burst length is
set to four and by A3-Ai when the burst length is set to eight (where Ai is the most significant column address bit for a
given configuration). The remaining (least significant) address bit(s) is (are) used to select the starting location within
the block. The programmed burst length applies to both Read and Write bursts.
Accesses within a given burst may be programmed to be either sequential or interleaved; this is referred to as the
burst type and is selected via bit A3. The ordering of accesses within a burst is determined by the burst length, the
burst type and the starting column address, as shown in Burst Definitionon Table
Rev. 0.5 / Jan. 2005 18

HY5DU281622ET
CAS LATENCY
The Read latency or CAS latency is the delay in clock cycles between the registration of a Read command and the
availability of the first burst of output data. The latency can be programmed 3 or 4 clocks.
If a Read command is registered at clock edge n, and the latency is m clocks, the data is available nominally coincident
with clock edge n + m.
Reserved states should not be used as unknown operation or incompatibility with future versions may result.
DLL RESET
The DLL must be enabled for normal operation. DLL enable is required during power up initialization, and upon return-
ing to normal operation after having disabled the DLL for the purpose of debug or evaluation. The DLL is automatically
disabled when entering self refresh operation and is automatically re-enabled upon exit of self refresh operation. Any
time the DLL is enabled, 200 clock cycles must occur to allow time for the internal clock to lock to the externally
applied clock before an any command can be issued.
OUTPUT DRIVER IMPEDANCE CONTROL
This device supports both Half strength driver and Matched impedance driver, intended for lighter load and/or point-to-
point environments. Half strength driver is to define about 50% of Full drive strength which is specified to be SSTL_2,
Class II, and Matched impedance driver, about 30% of Full drive strength.
Rev. 0.5 / Jan. 2005 19

HY5DU281622ET
EXTENDED MODE REGISTER SET (EMRS)
The Extended Mode Register controls functions beyond those controlled by the Mode Register; these additional func-
tions include DLL enable/disable, output driver strength selection(optional). These functions are controlled via the bits
shown below. The Extended Mode Register is programmed via the Mode Register Set command ( BA0=1 and BA1=0)
and will retain the stored information until it is programmed again or the device loses power.
The Extended Mode Register must be loaded when all banks are idle and no bursts are in progress, and the controller
must wait the specified time before initiating any subsequent operation. Violating either of these requirements will
result in unspecified operation.
BA1 BA0 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
0 1 RFU* DS RFU* DS DLL
A0 DLL enable
BA0 MRS Type
0 Enable
0 MRS
1 Diable
1 EMRS
A6 A1 Output Driver Impedance Control
0 0 Full
0 1 Half (60%)
1 0 Reserved
1 1 Weak (33%)
* All bits in RFU address fields must be programmed to Zero, all other states are reserved for future usage.
Rev. 0.5 / Jan. 2005 20

HY5DU281622ET
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Rating Unit

Ambient Temperature TA 0 ~ 70 oC
Storage Temperature TSTG -55 ~ 125 o

C
Voltage on Any Pin relative to VSS VIN, VOUT -0.5 ~ 3.6 V
Voltage on VDD relative to VSS VDD -0.5 ~ 3.6 V
Voltage on VDDQ relative to VSS VDDQ -0.5 ~ 3.6 V
Output Short Circuit Current IOS 50 mA
Power Dissipation PD 2 W
Soldering Temperature ⋅ Time TSOLDER 260 ⋅ 10 oC ⋅ sec
Note : Operation at above absolute maximum rating can adversely affect device reliability
DC OPERATING CONDITIONS (TA=0 to 70oC, Voltage referenced to VSS = 0V)
Parameter Symbol Min Typ Max Unit Note

VDD 2.375 2.5 2.625 V 1,4
VDDQ 2.375 2.5 2.625 V 1,4
Power Supply Voltage
VDD 2.7 2.8 2.9 V 1,5
VDDQ 2.7 2.8 2.9 V 1,5
Input High Voltage VIH VREF + 0.15 - VDDQ + 0.3 V
Input Low Voltage VIL -0.3 - VREF - 0.15 V
Termination Voltage VTT VREF - 0.04 VREF VREF + 0.04 V 3
Reference Voltage VREF 0.49*VDDQ 0.5*VDDQ 0.51*VDDQ V 2
Note : 1. VDDQ must not exceed the level of VDD.

2. VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the DC level of the same.
Peak to peak noise on VREF may not exceed ± 2% of the DC value.
3. VTT is expected to be set equal to VREF, and Vtt of the transmitting device must track VREF of the receiving device.
4. Supports 275/ 250/ 200/166Mhz
5. Supports 400/375/350/333/300Mhz
DC CHARACTERISTICS I (TA=0 to 70oC, Voltage referenced to VSS = 0V)
Parameter Symbol Min Max Unit Note

Input Leakage Current ILI -5 5 uA 1
Output Leakage Current ILO -5 5 uA 2
Output High Voltage VOH VTT + 0.76 - V IOH = -15.2mA,2
Output Low Voltage VOL - VTT - 0.76 V IOL = +15.2mA,2
Note : 1. VIN = 0 to 3.6V, All other pins are not tested under VIN =0V.
2. DOUT is disabled, VOUT=0 to 2.625V, It means, output logic high voltage and low voltage is depend on output channel conditions.
Rev. 0.5 / Jan. 2005 21

HY5DU281622ET
DC CHARACTERISTICS II (TA=0 to 70oC, Voltage referenced to VSS = 0V)
Speed
Parameter Symbol Test Condition Unit Note
25 26 28 30 33
One bank; Active - Precharge;

tRC=tRC(min); tCK=tCK(min);
DQ,DM and DQS inputs changing
Operating Current IDD0 230 220 210 200 190 mA 1
twice per clock cycle; address and
control inputs changing once per
clock cycle
Burst length=4, One bank active

Operating Current IDD1 230 220 210 200 190 mA 1
tRC ≥ tRC(min), IOL=0mA
Precharge Standby
Current in Power Down IDD2P CKE ≤ VIL(max), tCK=min 40 40 40 40 40 mA
Mode
Precharge Standby CKE ≥ VIH(min), /CS ≥ VIH(min),

Current in Non Power IDD2N tCK = min, Input signals are 150 140 130 120 110 mA
Down Mode changed one time during 2clks
Active Standby Cur-

rent in Power Down IDD3P CKE ≤ VIL(max), tCK=min 40 40 40 40 40 mA
Mode
Active Standby Cur- CKE ≥ VIH(min), /CS ≥ VIH(min),

rent in Non Power IDD3N tCK=min, Input signals are 190 180 170 160 150 mA
Down Mode changed one time during 2clks
Burst Mode Operating tCK ≥ tCK(min), IOL=0mA

IDD4 380 360 340 320 300 mA 1
Current All banks active
tRC ≥ tRFC(min),
Auto Refresh Current IDD5 380 360 340 320 300 mA 1,2
All banks active
Self Refresh Current IDD6 CKE ≤ 0.2V 4 4 4 4 4 mA
Four bank interleaving with BL=4,

Operating Current -
IDD7 Refer to the following page for 530 510 490 470 450 mA
Four Bank Operation
detailed test condition
Note :
1. IDD1, IDD4 and IDD5 depend on output loading and cycle rates. Specified values are measured with the output open.
2. Min. of tRFC (Auto Refresh Row Cycle Time) is shown at AC CHARACTERISTICS.
Rev. 0.5 / Jan. 2005 22

HY5DU281622ET
DC CHARACTERISTICS II (TA=0 to 70oC, Voltage referenced to VSS = 0V)
Speed
Parameter Symbol Test Condition Unit Note
36 4 5
One bank; Active - Precharge;

tRC=tRC(min); tCK=tCK(min); DQ,DM
Operating Current IDD0 and DQS inputs changing twice per 180 170 160 mA 1
clock cycle; address and control inputs
changing once per clock cycle
Burst length=2, One bank active

Operating Current IDD1 180 170 160 mA 1
tRC ≥ tRC(min), IOL=0mA
Precharge Standby Cur-

IDD2P CKE ≤ VIL(max), tCK=min 40 40 40 mA
rent in Power Down Mode
Precharge Standby Cur- CKE ≥ VIH(min), /CS ≥ VIH(min), tCK =

rent in Non Power Down IDD2N min, Input signals are changed one 100 90 80 mA
Mode time during 2clks
Active Standby Current in

IDD3P CKE ≤ VIL(max), tCK=min 40 40 40 mA
Power Down Mode
CKE ≥ VIH(min), /CS ≥ VIH(min),

Active Standby Current in
IDD3N tCK=min, Input signals are changed one 140 130 120 mA
Non Power Down Mode
time during 2clks
Burst Mode Operating Cur- tCK ≥ tCK(min), IOL=0mA

IDD4 280 260 240 mA 1
rent All banks active
tRC ≥ tRFC(min),
Auto Refresh Current IDD5 280 260 240 mA 1,2
All banks active
Self Refresh Current IDD6 CKE ≤ 0.2V 4 4 4 mA
Four bank interleaving with BL=4, Refer

Operating Current - Four
IDD7 to the following page for detailed test 430 410 390 mA
Bank Operation
condition
Note :
1. IDD1, IDD4 and IDD5 depend on output loading and cycle rates. Specified values are measured with the output open.
2. Min. of tRFC (Auto Refresh Row Cycle Time) is shown at AC CHARACTERISTICS.
Rev. 0.5 / Jan. 2005 23

HY5DU281622ET
AC OPERATING CONDITIONS (TA=0 to 70oC, Voltage referenced to VSS = 0V)
Parameter Symbol Min Max Unit Note
Input High (Logic 1) Voltage, DQ, DQS and DM signals VIH(AC) VREF + 0.45 V
Input Low (Logic 0) Voltage, DQ, DQS and DM signals VIL(AC) VREF - 0.45 V
Input Differential Voltage, CK and /CK inputs VID(AC) 0.7 VDDQ + 0.6 V 1
Input Crossing Point Voltage, CK and /CK inputs VIX(AC) 0.5*VDDQ-0.2 0.5*VDDQ+0.2 V 2
Note :
1. VID is the magnitude of the difference between the input level on CK and the input on /CK.
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the same.
AC OPERATING TEST CONDITIONS (TA=0 to 70oC, Voltage referenced to VSS = 0V)
Parameter Value Unit
Reference Voltage VDDQ x 0.5 V
Termination Voltage VDDQ x 0.5 V
AC Input High Level Voltage (VIH, min) VREF + 0.45 V
AC Input Low Level Voltage (VIL, max) VREF - 0.45 V
Input Timing Measurement Reference Level Voltage VREF V
Output Timing Measurement Reference Level Voltage VTT V
Input Signal maximum peak swing 1.5 V
Input minimum Signal Slew Rate 1 V/ns
Termination Resistor (RT) 50 Ω
Series Resistor (RS) 25 Ω
Output Load Capacitance for Access Time Measurement (CL) 30 pF
Rev. 0.5 / Jan. 2005 24

HY5DU281622ET
AC Overshoot/Undershoot specifications for Address and Command pins
Parameter 200MHz Specifications
Maximum peak amplitude allowwed for overshoot 1.5 V
Maximum peak amplitude allowwed for undershoot 1.5 V
The area between the overshoot signal and VDD must be less than or equal to(See below Fig) 4.5 V-nS
The area between the overshoot signal and GND must be less than or equal to(See below Fig) 4.5 V-nS
Max. amplitude=1.5V
+5
+4
+3
VDD
Volts +2
(V) +1
0 Ground
-1
-2
Max. area=4.5V-ns
-3
0 1 2 3 4 5 6
Time(ns)
AC Overshoot/Undershoot specifications for Data, Strobe and Mask Pins
Parameter 200MHz Specifications
Maximum peak amplitude allowwed for overshoot 1.2 V
Maximum peak amplitude allowwed for undershoot 1.2 V
The area between the overshoot signal and VDD must be less than or equal to(See below Fig) 2.4 V-nS
The area between the overshoot signal and GND must be less than or equal to(See below Fig) 2.4 V-nS
Max. amplitude=1.2V
+5
+4
+3
VDD
Volts +2
(V) +1
0 Ground
-1
-2
Max. area=2.4V-ns
-3
0 1 2 3 4 5 6
Time(ns)
Rev. 0.5 / Jan. 2005 25

HY5DU281622ET
AC CHARACTERISTICS - I (AC operating conditions unless otherwise noted)
25 26 28
Parameter Symbol Unit Note
Min Max Min Max Min Max
Row Cycle Time(Manual Precharge) tRC 22 - 21 - 20 - CK
Row Cycle Time(Auto Precharge) tRC_APCG 24 - 23 - 22 -
Auto Refresh Row Cycle Time tRFC 26 - 25 - 24 - CK
Row Active Time tRAS 16 100K 15 100K 14 100K CK
Row Address to Column Address Delay for Read tRCDRD 6 - 6 - 6 - CK
Row Address to Column Address Delay for Write tRCDWR 4 - 4 - 4 - CK
Row Active to Row Active Delay tRRD 4 - 4 - 4 - CK
Column Address to Column Address Delay tCCD 2 - 2 - 2 - CK
Row Precharge Time tRP 6 - 6 - 6 - CK
Write Recovery Time tWR 4 - 4 - 4 - CK
Last Data-In to Read Command tDRL 2 - 2 - 2 - CK
Auto Precharge Write Recovery + Precharge Time tDAL 10 - 10 - 10 - CK
CL=5 2.5 6 2.6 6 - -

System Clock Cycle Time tCK ns
CL=4 - - - - 2.8 6
Clock High Level Width tCH 0.45 0.55 0.45 0.55 0.45 0.55 CK
Clock Low Level Width tCL 0.45 0.55 0.45 0.55 0.45 0.55 CK
Data-Out edge to Clock edge Skew tAC -0.55 0.55 -0.6 0.6 -0.6 0.6 ns
DQS-Out edge to Clock edge Skew tDQSCK -0.55 0.55 -0.6 0.6 -0.6 0.6 ns
DQS-Out edge to Data-Out edge Skew tDQSQ - 0.35 - 0.35 - 0.35 ns
tHPmin tHPmin tHPmin

Data-Out hold time from DQS tQH -tQHS
-
-tQHS
-
-tQHS
- ns 1,6
tCH/L tCH/L tCH/L

Clock Half Period tHP min
-
min
-
min
- ns 1,5
Data Hold Skew Factor tQHS - 0.35 - 0.35 - 0.35 ns 6
Input Setup Time tIS 0.75 - 0.75 - 0.75 - ns 2
Input Hold Time tIH 0.75 - 0.75 - 0.75 - ns 2
Write DQS High Level Width tDQSH 0.4 0.6 0.4 0.6 0.4 0.6 CK
Write DQS Low Level Width tDQSL 0.4 0.6 0.4 0.6 0.4 0.6 CK
Clock to First Rising edge of DQS-In tDQSS 0.85 1.15 0.85 1.15 0.85 1.15 CK
Data-In Setup Time to DQS-In (DQ & DM) tDS 0.35 - 0.35 - 0.35 - ns 3
Data-In Hold Time to DQS-In (DQ & DM) tDH 0.35 - 0.35 - 0.35 - ns 3
Rev. 0.5 / Jan. 2005 26

HY5DU281622ET
25 26 28
DQS falling edge to CK setup time tDSS 3.0 - 3.0 - 3.0 - CK
DQS falling edge hold time from CK tDSH 3.0 - 3.0 - 3.0 - CK
Write DQS Preamble Setup Time tWPRES 0 - 0 - 0 - ns
Write DQS Preamble Hold Time tWPREH 0.35 - 0.35 - 0.35 - CK
Write DQS Postamble Time tWPST 0.4 0.6 0.4 0.6 0.4 0.6 CK
Mode Register Set Delay tMRD 10 - 10 - 10 - ns
Exit Self Refresh to Any Execute Command tXSC 200 - 200 - 200 - CK 4
2tCK 2tCK 2tCK

Power Down Exit Time tPDEX + tIS
-
+ tIS
-
+ tIS
- CK
Average Periodic Refresh Interval tREFI - 7.8 - 7.8 - 7.8 us
Note :
1. This calculation accounts for tDQSQ(max), the pulse width distortion of on-chip circuit and jitter.
2. Data sampled at the rising edges of the clock : A0~A11, BA0~BA1, CKE, /CS, /RAS, /CAS, /WE.
3. Data latched at both rising and falling edges of Data Strobes(UDQS,LDQS) : DQ, LDM,UDM.
4. Minimum of 200 cycles of stable input clocks after Self Refresh Exit command, where CKE is held high, is required to complete
Self Refresh Exit and lock the internal DLL circuit of DDR SDRAM.
5. Min (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this
value can be greater than the minimum specification limits for tCL and tCH).
6. tHP = minimum half clock period for any given cycle and is defined by clock high or clock low (tCH, tCL).
tQHS consists of tDQSQmax, the pulse width distortion of on-chip clock circuits, data pin to pin skew and
output pattern effects, and p-channel to n-channel variation of the output drivers.
7. DQS, DM and DQ input slew rate is specified to prevent double clocking of data and preserve setup and hold times.
Signal transitions through the DC region must be monotonic.
Rev. 0.5 / Jan. 2005 27

HY5DU281622ET
AC CHARACTERISTICS - I (AC operating conditions unless otherwise noted)
30 33 36
Row Cycle Time(Manual Precharge) tRC 19 - 18 - 16 - CK
Row Cycle Time(Auto Precharge) tRC_APCG 21 - 20 - 18 -
Auto Refresh Row Cycle Time tRFC 23 - 22 - 20 - CK
Row Active Time tRAS 13 100K 12 100K 11 100K CK
Row Address to Column Address Delay for Read tRCDRD 6 - 6 - 5 - CK
Row Address to Column Address Delay for Write tRCDWR 4 - 4 - 3 - CK
Row Active to Row Active Delay tRRD 4 - 4 - 3 - CK
Column Address to Column Address Delay tCCD 2 - 1 - 1 - CK
Row Precharge Time tRP 6 - 6 - 5 - CK
Write Recovery Time tWR 4 - 4 - 3 - CK
Last Data-In to Read Command tDRL 2 - 2 - 2 - CK
Auto Precharge Write Recovery + Precharge Time tDAL 10 - 10 - 8 - CK
System Clock Cycle Time CL=4 tCK 3 6 3.3 6 3.6 10 ns
Clock High Level Width tCH 0.45 0.55 0.45 0.55 0.45 0.55 CK
Clock Low Level Width tCL 0.45 0.55 0.45 0.55 0.45 0.55 CK
Data-Out edge to Clock edge Skew tAC -0.6 0.6 -0.6 0.6 -0.6 0.6 ns
DQS-Out edge to Clock edge Skew tDQSCK -0.6 0.6 -0.6 0.6 -0.6 0.6 ns
DQS-Out edge to Data-Out edge Skew tDQSQ - 0.35 - 0.35 - 0.35 ns
tHPmin tHPmin tHPmin

-
-tQHS
-
-tQHS
- ns 1,6
tCH/L tCH/L tCH/L

-
min
-
min
- ns 1,5
Data Hold Skew Factor tQHS - 0.35 - 0.35 - 0.4 ns 6
Input Setup Time tIS 0.75 - 0.75 - 0.75 - ns 2
Input Hold Time tIH 0.75 - 0.75 - 0.75 - ns 2
Write DQS High Level Width tDQSH 0.4 0.6 0.4 0.6 0.4 0.6 CK
Write DQS Low Level Width tDQSL 0.4 0.6 0.4 0.6 0.4 0.6 CK
Clock to First Rising edge of DQS-In tDQSS 0.85 1.15 0.85 1.15 0.85 1.15 CK
Data-In Setup Time to DQS-In (DQ & DM) tDS 0.35 - 0.35 - 0.4 - ns 3
Data-In Hold Time to DQS-In (DQ & DM) tDH 0.35 - 0.35 - 0.4 - ns 3
Rev. 0.5 / Jan. 2005 28

HY5DU281622ET
30 33 36
DQS falling edge to CK setup time tDSS 0.3 - 0.3 - 0.3 - CK
DQS falling edge hold time from CK tDSH 0.3 - 0.3 - 0.3 - CK
Read DQS Preamble Time tRPRE 0.9 1.1 0.9 1.1 0.9 1.1 CK
Read DQS Postamble Time tRPST 0.4 0.6 0.4 0.6 0.4 0.6 CK
Write DQS Preamble Setup Time tWPRES 0 - 0 - 0 - ns
Write DQS Preamble Hold Time tWPREH 0.35 - 0.35 - 0.35 - CK
Write DQS Postamble Time tWPST 0.4 0.6 0.4 0.6 0.4 0.6 CK
Mode Register Set Delay tMRD 10 - 10 - 10 - ns
Exit Self Refresh to Any Execute Command tXSC 200 - 200 - 200 - CK 4
2tCK 2tCK 2tCK

-
+ tIS
-
+ tIS
- CK
Average Periodic Refresh Interval tREFI - 7.8 - 7.8 - 7.8 us
Note :
3. Data latched at both rising and falling edges of Data Strobes(UDQS,LDQS) : DQ, LDM,UDM.
Rev. 0.5 / Jan. 2005 29

HY5DU281622ET
AC CHARACTERISTICS - I (Continued)
4 5
Min Max Min Max
Row Cycle Time(Manual Precharge) tRC 15 - 12 - CK
Row Cycle Time(Auto Precharge) tRC_APCG 17 - 13 -
Auto Refresh Row Cycle Time tRFC 18 - 14 - CK
Row Active Time tRAS 10 100K 8 100K CK
Row Address to Column Address Delay for Read tRCDRD 5 - 4 - CK
Row Address to Column Address Delay

tRCDWR 3 - 2 - CK
for Write
Row Active to Row Active Delay tRRD 3 - 2 - CK
Column Address to Column Address Delay tCCD 1 - 1 - CK
Row Precharge Time tRP 5 - 4 - CK
Write Recovery Time tWR 3 - 3 - CK
Last Data-In to Read Command tDRL 2 - 2 - CK
Auto Precharge Write Recovery +

tDAL 8 - 7 - CK
Precharge Time
CL=4 4 10 - -
System Clock Cycle Time tCK ns
CL=3 - - 5 10
Clock High Level Width tCH 0.45 0.55 0.45 0.55 CK
Clock Low Level Width tCL 0.45 0.55 0.45 0.55 CK
Data-Out edge to Clock edge Skew tAC -0.6 0.6 -0.65 0.65 ns
DQS-Out edge to Clock edge Skew tDQSCK -0.6 0.6 -0.55 0.55 ns
DQS-Out edge to Data-Out edge Skew tDQSQ - 0.4 - 0.4 ns
tHPmin tHPmin
-
-tQHS
- ns 1,6
tCH/L tCH/L
-
min
- ns 1,5
Data Hold Skew Factor tQHS - 0.4 - 0.45 ns 6
Input Setup Time tIS 0.75 - 0.6 - ns 2
Input Hold Time tIH 0.75 - 0.6 - ns 2
Write DQS High Level Width tDQSH 0.4 0.6 0.4 0.6 CK
Write DQS Low Level Width tDQSL 0.4 0.6 0.4 0.6 CK
Clock to First Rising edge of DQS-In tDQSS 0.85 1.15 0.72 1.28 CK
Rev. 0.5 / Jan. 2005 30

HY5DU281622ET
4 5
Min Max Min Max
Data-In Setup Time to DQS-In (DQ & DM) tDS 0.4 - 0.4 - ns 3
Data-In Hold Time to DQS-In (DQ & DM) tDH 0.4 - 0.4 - ns 3
DQS falling edge to CK setup time tDSS 0.3 - 0.3 - CK
DQS falling edge hold time from CK tDSH 0.3 - 0.3 - CK
Read DQS Preamble Time tRPRE 0.9 1.1 0.9 1.1 CK
Read DQS Postamble Time tRPST 0.4 0.6 0.4 0.6 CK
Write DQS Preamble Setup Time tWPRES 0 - 0 - ns
Write DQS Preamble Hold Time tWPREH 0.35 - 0.25 - CK
Write DQS Postamble Time tWPST 0.4 0.6 0.4 0.6 CK
Mode Register Set Delay tMRD 10 - 10 - ns
Exit Self Refresh to Any Execute Command tXSC 200 - 200 - CK 4
2tCK 2tCK
-
+ tIS
- CK
Average Periodic Refresh Interval tREFI - 7.8 - 7.8 us
Note :
3. Data latched at both rising and falling edges of Data Strobes(UDQS,LDQS) : DQ, UDM,LDM.
Rev. 0.5 / Jan. 2005 31

HY5DU281622ET
AC CHARACTERISTICS - II
Frequency CL tRC tRC_APCG tRFC tRAS tRCDRD tRCDWR tRP tDAL Unit
400MHz (2.5ns) 5 22 24 26 16 6 4 6 10 tCK
375MHz (2.6ns) 5 21 23 25 15 6 4 6 10 tCK
350MHz (2.8ns) 4 20 22 24 14 6 4 6 10 tCK
333MHz (3.0ns) 4 19 21 23 13 6 4 6 10 tCK
300MHz (3.3ns) 4 18 20 22 12 6 4 6 10 tCK
275MHz (3.6ns) 4 16 18 20 11 5 3 5 8 tCK
250MHz (4.0ns) 4 15 17 18 10 5 3 5 8 tCK
200MHz (5.0ns) 3 12 13 14 8 4 2 4 7 tCK
Rev. 0.5 / Jan. 2005 32

HY5DU281622ET
CAPACITANCE (TA=25oC, f=1MHz )
Parameter Pin Symbol Min Max Unit
Input Clock Capacitance CK, /CK CCK 2 3 pF
Input Capacitance All other input-only pins CIN 2 3 pF
Input / Output Capacitance DQ, DQS, DM CIO 4 5 pF
Note :
1. VDD = min. to max., VDDQ = 2.375V to 2.625V, VODC = VDDQ/2, VOpeak-to-peak = 0.2V
2. Pins not under test are tied to GND.
3. These values are guaranteed by design and are tested on a sample basis only.
OUTPUT LOAD CIRCUIT
V TT
R T =50Ω
Output
Zo=50Ω V REF
C L=30pF
Rev. 0.5 / Jan. 2005 33

HY5DU281622ET
PACKAGE INFORMATION
400mil 66pin Thin Small Outline Package
Unit : mm(Inch)
11.94 (0.470)
11.79 (0.462)
10.26 (0.404)
10.05 (0.396)
BASE PLANE
22.33 (0.879)
22.12 (0.871) 0 ~ 5 Deg.
0.35 (0.0138)
0.65 (0.0256) BSC
0.25 (0.0098)
SEATING PLANE
1.194 (0.0470) 0.15 (0.0059) 0.597 (0.0235) 0.210 (0.0083)

0.991 (0.0390) 0.05 (0.0020) 0.406 (0.0160) 0.120 (0.0047)
Rev. 0.5 / Jan. 2005 34

128M (8Mx16) GDDR SDRAM: HY5DU281622ET

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HY5DU281622ET

128M(8Mx16) GDDR SDRAM

0.1 Defined target spec. July 2003

1) Insert Overshoot/Undershoot Specification

0.3 tPDEX value Change Mar. 2004

Rev. 0.5 / Jan. 2005 2

HY5DU281622ET-25 400MHz 800Mbps/pin

Rev. 0.5 / Jan. 2005 3

PIN CONFIGURATION (Top View)

ROW AND COLUMN ADDRESS TABLE

Row Address A0 - A11

Column Address A0-A8

Bank Address BA0, BA1

Auto Precharge Flag A10

Rev. 0.5 / Jan. 2005 4

PIN TYPE DESCRIPTION

DQ0 ~ DQ15 I/O Data input / output pin : Data Bus

VREF Supply Reference voltage for inputs for SSTL interface.

Rev. 0.5 / Jan. 2005 5

FUNCTIONAL BLOCK DIAGRAM

4Banks x 2Mbit x 16 I/O Double Data Rate Synchronous DRAM

2-bit Prefetch Unit

Rev. 0.5 / Jan. 2005 6

SIMPLIFIED COMMAND TRUTH TABLE

Extended Mode Register Set H X L L L L OP code 1,2

Mode Register Set H X L L L L OP code 1,2

Precharge All Banks H X 1,5

Read Burst Stop H X L H H L X 1

Rev. 0.5 / Jan. 2005 7

WRITE MASK TRUTH TABLE

/CS, /RAS, A8/

Data Write H X X L X 1,2,3

Data-In Mask H X X H X 1,2,3

Rev. 0.5 / Jan. 2005 8

OPERATION COMMAND TRUTH TABLE - I

H X X X X DSEL NOP or power down3

L H H H X NOP NOP or power down3

L H L H BA, CA, AP READ/READAP ILLEGAL4

L L L H X AREF/SREF Auto Refresh or Self Refresh5

L H L H BA, CA, AP READ/READAP Begin read : optional AP6

L L H L BA, AP PRE/PALL Precharge7

L L L L OPCODE MRS ILLEGAL11

L H L H BA, CA, AP READ/READAP Term burst, new read:optional AP8

READ L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL

L L H H BA, RA ACT ILLEGAL4

L L L L OPCODE MRS ILLEGAL11

WRITE L H H L X BST ILLEGAL4

L H L H BA, CA, AP READ/READAP Term burst, new read:optional AP8

Rev. 0.5 / Jan. 2005 9

OPERATION COMMAND TRUTH TABLE - II

L L H H BA, RA ACT ILLEGAL4

L L L L OPCODE MRS ILLEGAL11

L H L H BA, CA, AP READ/READAP ILLEGAL10

L L H L BA, AP PRE/PALL ILLEGAL4,10

L L L L OPCODE MRS ILLEGAL11

L H L H BA, CA, AP READ/READAP ILLEGAL10

L L H L BA, AP PRE/PALL ILLEGAL4,10

L L L L OPCODE MRS ILLEGAL11

Reference Voltage VREF 0.49VDDQ 0.5VDDQ 0.51*VDDQ V 2