MicroElectronicsTransistorsIcDataBook Text PDF

yV6
TRANSISTORS & ICs

0ATAB00K
ISSUE 1
MICRO ELECTRONIC LTD.

Since 1964 Micro Electronics Ltd. has been an independent manufacturer
supplying more than 4000 types of solid-state devices. This databook contains
the information of 560 master types only. Should you require a device not
included, or a particular one designed to your own specifications, please contact
M.E.L. regional sales offices and distributors.
- CONTENTS -
APPLICATIONS OF NON-REGISTERED TYPES
* DEVICE SELECTION GUIDE
* DATASHEETS: BC MEU
BD MH
BF ML
CL MPS
CX MSB
D PN
EN RN
FPT S
KM 2N
LN 2SA
MAS 2SB
MD 2SC
MEL 2SD
* MECHANICAL OUTLINES
*lcro Electronics Limited reserves the right to make changes In this book without t
APPLICATIONS OF NON-REGISTERED TYPES
APPLICATIONS REFERENCE DATA SHEETS APPLICATIONS REFERENCE DATA SHEETS
MULTIBAND RADIO km types GERMANIUM REPLACEMENT MSB492
PORTABLE TV ex types 27 MHz LOW POWER ™??,°,

00
PN2222
AUDIO AMPLIFIER PHOTO DETECTOR

Low Gain (20V) KM901 iL^SOyA MEL31
High Gain (20V) KM9014 IL « 1mA FPT100
Low Noise (2 SV)" LN9014 lL«5mA MEL11
Driver 0.1 A/40V CX904 IL * 15mA up CL138
0.5A/40V CX906 Silicon Chip S110
1A/40V CX908
1A/60V CL85S
1A/80V MH8108 TRIGGERING & TIMING
Output 0.5 ~1W CL05S 3-terminal type MEU21
1.5~2W CL15S 4-terminal type MAS32
3~5W MH8100
7 ~1SW. MH8700
18~2SW MH8500 HIGH VOLTAGE
30Wup CX705A 0.1A(TO-92) CX703
0.1A(TO-220) MH7301
2A(TO-220) CX701
Also suitable for medium speed switching 5A(TO-220) CX702
and universal applications.
INTERGRATED CIRCUIT
Digital Alarm Clock MD8009
LOWVCE(sat)@lA cliss Precision Timer ML555
Digit Driver ML1060
Voltage Regulator ML200S
DARLINGTON AMPLIFIER mps -Ai3 V-FConverter ML9400
BLINKING TOY KIT D20.U20
NOTE : For Miniature Transistors, see BC146, BC200.
For N-Channel JFETs. see 2N3823.
For Rectifiers and LEDs, see individual catalogues.

DEVICE SELECTION GUIDE
GENERAL PURPOSE AMPLIFIERS HIGH

AND MEDIUM SPEED SWITCHES VOLTAGE
40A
60Y
-40A
-60Y
50A
-50A
60Y
-60Y
80Y
60Y
45A
-60Y
-45A
Note: (1 )
VcEO in vo,ts « Positive value for NPN and negative value for PNP.
(2) Hfe in X, Y, A, B, C categories. X~65, Y«100, A«165, B«300, 0*500.
Nw VcEO, Hfe \ RF-IF GENERAL PURPOSE AMPLIFIERS HIGH

y USE
\. (Note) SMALL SIGNAL AND MEDIUM SPEED SWITCHES VOLTAGE
N
I I
s 8 < < <
5 < <
m < d
i z d o
8 8 5 8 8 8 8 8 8
5 o o o o o
DEVICE DATA
TYPE SHEET CASE^
BC307 BC177 TO-92F -45B
BC308 BC177 TO-92F -25B
BC309 BC177 TO-92F -20B

BC317 BC107 TO-92A 45B
BC318 BC107 TO-92A 30B
BC319 BC107 TO-92A 20B
BC320 BC177 TO-92A -45B
BC321 BC177 TO-92A -30B
BC322 BC177 TO-92A -20B
BC327 TO-92F -45A

BC328 BC327 TO-92F -25A
BC337 TO-92F 45A
BC338 BC337 TO-92F 25A
BC413 TO-92F 30B
BC414 BC413 TO-92F 45B
BC415 BC413 TO-92F -35B
BC416 BC413 TO-92F -45B
BC431 TO-92F 60Y
BC432 BC431 TO-92F -60Y
BC440 TO-39 40A

BC441 BC440 TO-39 60Y
BC460 BC440 TO-39 -40A
BC461 BC440 TO-39 -60Y
BC527 TO-92A -60Y
BC528 BC527 TO-92A -80Y
BC537 TO-92A 60Y

BC538 BC537 TO-92A 80Y
BC546 TO-92F 65A
BC547 BC546 TO-92F 45B
BC548 BC546 TO-92F 30B
BC549 BC546 TO-92F 30B
BC550 BC546 TO-92F 45B
BC556 TO-92F -65A
BC557 BC556 TO-92F -45B \
BC558 BC556 TO-92F -30B
BC559 BC556 TO-92F -30B
Note: (1) VcEO in volts, positive value for NPN and negative value for PNP.
(2) HFE in X, Y, A, B, C categories. X<«65, Y~100, A«165, B«300, C«500.

\ VCEO, H FE ^
\ USE
RF-IF GENERAL PURPOSE AMPLIFIERS HIGH
N
X X
s < <
1
'5
d a < < <
§ Z CO d
8 11
i 8 » 8 8 8 8
o o o o o o o
DEVICE DATA
TYPE SHEET CASES
BC560 BC5B6 TO-92F -45B
BC727 TO-92A -40A
BC728 BC727 TO-92A -25A
BC737 TO-92A 40A
BC738 BC737 TO-92A 25A
BD220 TO-220B 70X (low speed)
BD221 BD220 TO-220B 40X (low speed)
BD222 BD220 TO-220B 60X (low speed)
BD239 TO-220B 45Y

BD239A BD239 TO-220B 60Y
BD239B BD239 TO-220B 80X
BD239C TO-220B 100X
BD240 TO-220B -45Y
BD240A BD240 TO-220B -60Y
BD240B BD240 TO-220B -80X
BD240C BD239C TO-220B -100X
BD241 TO-220B 45Y
BD241A BD241 TO-220B 60Y
BD241B BD241 TO-220B 80X
BD241C BD239C TO-220B 100X
BD242 TO-220B -45Y
BD242A BD242 TO-220B -60Y
BD242B BD242 TO-220B -80X
BD242C BD239C TOr220B -100X
BDS33 TO-220B 45Y
BD534 TO-220B -45Y
BD535 BD533 TO-220B 60Y
BD536 BD534 TO-220B -60Y
BD537 BDS33 TO-220B 80X
BD538 BDS34 TO-220B -80X
BD633 TO-220B 45Y
BD634 BD633 TO-220B -45Y
BD636 BD633 TO-220B 60Y
|
Note: (1 ) VcEO in volts, positive value for NPN and negative value for PNP.
(2) Hfe in X, Y, A, B, C categories. X«65, Y«100, A«165, B«300, O500.
\ VcEO. HFE ^
\ USE
\^ (Note) SMALL SIGNAL AND MEDIUM SPEED SWITCHES VOLTAGE
N
I X
5 0)
< < <
o m < < <
z 6 o CO d
8 i 8 8 8 8 8 8
4r 3 o o o a o o
DEVICE DATA
TYPE SHEET CASE^
BD636 BD633 TO-220B -60Y
BD637 BD633 TO-220B 80X
BD638 BD633 TO-220B -80X
BF158 TO- 106 12X

BF159 BF158 TO- 106 20X
BF160 BF158 TO- 106 12X
BF244 2N3823 TO-92DA N-JFET
BF245 2N3823 TO-92DE N-JFET
BF254 TO-92E 20Y
BF255 BF254 TO-92E 20X
BF256 2N3823 TO-92DE N-JFET
BF257 TO-39 160Y
BF258 BF257 TO-39 250Y
BF259 BF257 TO-39 300X
BF297 TO-92F 160Y
BF298 BF297 TO-92F 250Y
BF299 BF297 TO-92F 300X
BF336 TO-39 180Y
BF337 BF336 TO-39 200Y
BF33B BF336 TO-39 225X
BF368 TO-92A 15X
BF369 BF368 TO-92A 20Y
BF391 TO-92A 200Y
BF392 BF391 TO-92A 250Y
BF393 BF381 TO-92A 300X
BF494 TO-92E 20Y
BF495 BF494 TO-92E 20X
CL055 TO-92A -20A (low V(:ek>

CL066 CL055 TO-92A 20A (lowVCEK)
CL138 TO-106 Photo Darlington Transistor
i
1 1
i I
(2) HFEinX, Y, A, B, C categories. X«65, Y«*100, A«165, B«300, C«500.
RFIF GENERAL PURPOSE AMPLIFIERS HIGH

SMALL SIGNAL AND MEDIUM SPEED SWITCHES VOLTAGE
DEVICE DATA
TYPE SHEET
CL155 TO-92A -25A (low VCEK)

CL166 CL155 TO-92A 25A (low VCEK)
CL855 TO-92A -60Y
CL866 CL855 TO-92A 60Y
TO-220B 120X
TO-220B 150X
TO-220B 80X
TO-220B 100X
TO-92A 160Y
CX703 TO-92A 200Y
CX703 TO-92A 250X
TO-220B 50Y
TO-3 45X (low speed)
CX705 TO-3 60X (low speed)

CX704 TO-220B -50Y
TO-92A 40X
TO-92A 40B
TO-92A 40A
TO-92A 40A
TO-92A 30X
TO-92A 20X
CX904 TO-92A -40B
CX906 TO-92A -40A

CX908 TO-92A -40A
D20.U20 Blinking Toy Kit
D44C TO-220B 30~80X

D45C TO-220B -30~-80X
(2) Hfe in X, Y, A, B, C categories. X«65, Y«100, A«165, B~300, C*=500.
\ VCEO, HFE ^
V USE
M N
X I
2 2 8 < < <
1
*5
o < <
n < 6
i z d
« 11 li » n «
4r ir ! a o o o o
DEVICE DATA
TYPE SHEET CASE^
EN930 TO- 106 45B
FPT100 TO- 106 Photo 1 'ransistoi
FPT100A FPT100 TO- 106 Photo Transistoi
FPT100B FPT100 TO- 106 Photo 1"ransistoi
t
KM901 LU TO-92A 20X o
KM904 z TO-92A 20A
-1
1
KM905 TO-92A -20A
KM917 TO-92A 20X
c
KM918 D TO-92A 12X 5 .2
<
KM928 Q TO-92A 20X
to
KM934 O TO-92A 30A II

CC
KM935 TO-92A -30A o
*-
_o
KM9014 20B
KM9015
s TO-92A
» S
TO-92A -20B
2 8
+
LN9014 TO-92A 25B

LN9015 LN9014 TO-92A -25B
MAS32 TO-72 Silicon Controllc id Switl :h
MAS39 TO-72 Silicon Controlli d Swit :h
MD8009 Digital Alarm CI ock (I.C:.)
MEL11 TO-106 Photo C )arlington Trans stor
MEL12 MEL11 TO-106 Photo Darlington Trans stor
MEL31 TO-106 Photo Transistor
(2) Hfe in X, Y, A, B, C categories. X«65, Y*100, A«165, B«300, C~500.

\X VCEO, H FE \
\ USE
\ (Note) \ SMALL SIGNAL AND MEDIUM SPEED SWITCHES VOLTAGE
N X
X 2
s S < < <
1
'5 in < < <
§ z © d CO d
a « i » S S
3 O o o o o
DEVICE DATA
TYPE SHEET CASE^
MEL32 MEL31 to-iob Photo T ransistor
MEU21 TO-106 Program nable Unijunction Transistor

MEU22 MEU21 TO-106 Program mableUr ijuncti jn Tran sistor
MH0B10 MH8100 TO-220B -30Y

MH0816 MH8106 TO-220B -60Y
MH0818 MH8106 TO-220B -SOY
MH0850 MH8S00 TO-220B -60Y
MH0870 MH8700 TO-220B -50Y
MH7301 TO-220B 160Y
MH7302 MH7301 TO-220B 200Y
MH7303 MH7301 TO-220B 250X
MH8100 TO-220B 30Y
MH8106 TO-220B 60Y
MH8108 TO-220B 80Y
MH8500 TO-220B 60Y
MH8700 TO-220B 50Y
ML555 Timer (1 C.)
ML1060 Digit Driver (I.C.
ML2005 5-Volt Voltage Regulato (I.C.)
ML9400 Voltage to Frequ sncyCc nverter (I.C.)
MPS2711 MPS6565 TO-92A 18X

MPS2712 MPS6565 TO-92A 18A
MPS2716 MPS6S6S TO-92A 18A
MPS2923 MPS6S65 TO-92A 25Y
(2) HFE in X, Y, A, B, C categories. X«65, Y«100, A*165, B«300, C~500.
\ x
VcEO, HFE \
\ USE
\ <Note) \ SMALL SIGNAL AND MEDIUM SPEED SWITCHES VOLTAGE
N
I I
5 < < <
1 o
z d
in
b < < <
CO r- d
8 8 5 « 8 8 8 8 8
ir t o
_i
o o o o o
DEVICE DATA
TYPE SHEET CASE^
MPS2924 MPS6565 TO-92A 25A
MPS2925 MPS6565 TO-92A 25B
MPS3390 MPS6565 TO-92A 25C
MPS3391 MPS6565 TO-92A 25B
MPS3392 MPS6565 TO-92A 25A
MPS3393 MPS6565 TO-92A 25Y
MPS3394 MPS6565 TO-92A 25X
MPS3395 MPS6565 TO-92A 25B
MPS3396 MPS6565 TO-92A 25A
MPS3397 MPS6565 TO-92A 25A
MPS3398 MPS6565 TO-92A 25B
MPS3638 TO-92A -25Y
MPS3638A MPS3638 TO-92A -25A
MPS3702 2N3702 TO-92A -25A
MPS3703 2N3702 TO-92A -30Y
MPS3704 2N3702 TO-92A 30A
MPS3705 2N3702 TO-92A 30Y
MPS3706 2N3702 TO-92A 20A
MPS3707 MPS6565 TO-92A 30B
MPS3708 MPS6565 TO-92A 30B
MPS3709 MPS6565 TO-92A 30Y
MPS3710 MPS6565 TO-92A 30A
MPS3711 MPS6565 TO-92A 30B
MPS4354 TO-92A -60Y
MPS4355 MPS4354 TO-92A -60A
MPS4356 MPS4354 TO-92A -80Y
MPS5172 MPS6565 TO-92A 25B
MPS6512 MPS6565 TO-92A 30X
MPS6513 MPS6565 TO-92A 30Y
MPS6530 TO-92A 40Y
MPS6531 MPS6530 TO-92A 40A
MPS6532 MPS6530 TO-92A 30Y
MPS6533 MPS6530 TO-92A -40Y
MPS6534 MPS6530 TO-92A -40A
MPS6535 MPS6530 TO-92A -30Y
MPS6560 TO-92A 25A
|
(2) HFE in X, Y, A, B, C categories. X«»65, Y«100 A«165, B«300, C«500.
f
XX VcEO, Hfe \
\ icc
X
i
Note) \ SMALL SIGNAL AND MEDIUM SPEED SWITCHES VOLTAGE
N N
X I
2 2 < < <
s o in < < <
d
z d o 00 r-
» » S » )) » »
o
-i o o o
DEVICE DATA
TYPE SHEET CASES
MPS6561 MPS6560 TO-92A 20A

MPS6562 MPS6560 TO-92A -25A
MPS6563 MPS6560 TO-92A -20A
MPS6565 TO-92A 45Y
MPS6566 MPS6565 TO-92A 45A
MPS6573 MPS6565 TO-92A 35B
MPS6574 MPS6565 TO-92A 35A
MPS6575 MPS6565 TO-92A 45B
MPS6576 MPS6565 TO-92A 45A
MPS8000 TO-92A 30 A ( 27MHz 1
MPSA05 TO-92A 60Y

MPSA06 MPSA05 TO-92A 80Y
MPSA13 TO-92A NPN Darlington
MPSA14 MPSA13 TO-92A NPN Darlington
MPSA20 TO-92A 40A

MPSA42 TO-92A 300X
MPSA43 MPSA42 TO-92A 200Y
MPSA55 MPSAOS TO-92A -60Y
MPSA56 MPSA05 TO-92A -80Y
MPSA65 MPSA13 TO-92A PNP Darlington
MPSA66 MPSA13 TO-92A PNP Darlington
MPSA70 MPSA20 TO-92A -40A
MPSD01 TO-92A 200Y

MPSD05 TO-92A 25A
MPSD55 MPSD05 TO-92A -25A
MPSL01 TO-92A 120Y
(2) Hfe in X, Y, A, B, C categories. X*65, Y«100, A«165, B«300, C«500.
\\ VCEO, H FE V \ 1 ISF
>^ Note) \ SMALL SIGNAL AND MEDIUM SPEED SWITCHES VOLTAGE
N N
X X
s s 0)
< < <
S "5 m < < <
z o ci CO ci
8 i 8 8 8 8 8 8
t o o o O o o o
DEVICE DATA
TYPE SHEET CASE^
MSB492 TO-92A -20A
PN2222 2N2222 TO-92A 30A

PN2222A 2N2222 TO-92A 40A
PN2907 2N2907 TO-92A -40A
PN2907A 2N2907 TO-92A -60A
PN3563 2N3563 TO-92A 12Y
PN3565 2N3565 TO-92A 25B
PN3567 MPS4354 TO-92A 40Y
PN3568 MPS4354 TO-92A 60Y
PN3569 MPS4354 TO-92A 40A
PN3641 MPS3638 TO-92A 30Y
PN3642 MPS3638 TO-92A 45Y
PN3643 MPS3638 TO-92A 30A
PN3644 MPS3638 TO-92A -45A
PN3645 MPS3638 TO-92A -60A
PN5128 MPS3638 TO-92A 12A
PN5130 2N3563 TO-92A 12X
PN5132 2N3563 TO-92A 20X
PN5138 2N3565 TO-92A -30B
PN5142 MPS3638 TO-92A -20Y
RN4918 TO-220B -40X

RN4919 RN4918 TO-220B -60X
RN4920 RN4918 TO-220B -80X
RN4921 TO-220B 40X
RN4922 RN4921 TO-220B 60X
RN4923 RN4921 TO-220B 80X
S-110 Photo T ansistor Ship

1
Note: (1 ) VCEO in volts, positive value for NPN and negative value for PNP.
(2) HFE in X, Y, A, B, C categories. X«65, Y«100, A«165, B«300, C«5CX).
\ VcEO, Hfe \ RF-IF GENERAL PURPOSE AMPLIFIERS HIGH

\\ (Note)
\ USE
\ SMALL SIGNAL AND MEDIUM SPEED SWITCHES VOLTAGE
N
I X
5 5 0)
< < <
1 o
d < < <
d
§ Z d to
8 » i 8 8 8 8 8 8
5 O o o o o
DEVICE DATA
TYPE SHEET CASE^
SE4010 EN930 TO-106 45B
2N930 TO-18 45B

2N2102 TO-39 65Y
2N2222 TO-18 30A
2N2222A 2N2222 TO-18 40A
2N2586 TO-18 45B
2N2711 MPS6565 TO-92B 18X
2N2712 MPS656S TO-92B 18A
2N2716 MPS6565 TO-92B 18A
2N2907 TO-18 -40A
2N2907A 2N2907 TO-18 -60A
2N2923 MPS6565 TO-92B 25Y
2N2924 MPS6565 TO-92B 25A
2N2925 MPS6S65 TO-92B 25B
2N3019 TO-39 80A
2N3020 2N3019 TO-39 80Y
2N3053 TO-39 40A
2N3107 TO-39 60A
2N3108 2N3107 TO-39 60Y
2N3109 2N3107 TO-39 40A
2N3110 2N3107 TO-39 40Y
2N3390 MPS6565 TO-92B 25C
2N3391 MPS6565 TO-92B 25B
2N3392 MPS6565 TO-92B 25A
2N3393 MPS6565 TO-92B 25Y
2N3394 MPS6565 TO-92B 25X
2N3395 MPS6565 TO-92B 25B
2N3396 MPS6565 TO-92B 25A
2N3397 MPS6S65 TO-92B 25A
2N3398 MPS6565 TO-92B 25B
2N3402 2N3702 TO-92B 25A
2N3403 2N3702 TO-92B 25B
2N3404 2N3702 TO-92B 50A
(2) HFE in X, Y, A, B, C categories. X~65, Y«100, A«165, B=s300, C«500.
GENERAL PURPOSE AMPLIFIERS HIGH

AND MEDIUM SPEED SWITCHES VOLTAGE
(2) HFE in X, Y, A, B, C categories. X«65, Y«100, A«165, B«300, C~500.
\ VCEO. HFE ^
\ USE
Nv Note) SMALL SIGNAL AND MEDIUM SPEED SWITCHES VOLTAGE
N N
X z
s s Si < < <
o in < < <
z d e> CO d
8 » i 8 8 8 8 8 8
4r 4r 3 o o a o o o
DEVICE DATA
TYPE SHEET CASE\
2N3856 2N3691 TO-92B 18A
2N3856A 2N3691 TO-92B 30A
2N3858 2N3691 TO-92B 30Y
2N3859 2N3691 TO-92B 30A
2N3860 2N3691 TO-92B 30A
2N3964 2N2586 TO-18 -45B
2N4030 TO-39 -60Y
2N4031 2N4030 TO-39 -80Y
2N4032 2N4030 TO-39 -60A
2N4033 2N4030 TO-39 -80A
2N4036 2N2102 TO-39 -65Y
2N4037 2N30S3 TO-39 -40A
2N4058 2N3707 T0-92B -30B
2N4059 2N3707 TO-92B -30B
2N4060 2N3707 TO-92B -30Y
2N4061 2N3707 T0-92B -30A
2N4062 2N3707 TO-92B -30B
2N4234 TO-39 -40Y
2N4235 2N4234 TO-39 -60Y
2N4237 2N4234 TO-39 40Y
2N4238 2N4234 TO-39 60Y
2N4248 TO- 106 -40A
2N4249 2N4248 TO- 106 -60A
2N4250 2N4248 TO- 106 -40C
2N4302 2N3823 TO- 106 N-JFET
2N4303 2N3823 TO-106 N-JFET
2N4304 2N3823 TO- 106 N-JFET
2N4400 TO-92A 40Y
2N4401 2N4400 TO-92A 40A
2N4402 TO-92A -40Y
2N4403 2N4402 TO-92A -40A
2N4416 2N3823 TO-72 N-JFET
2N4424 2N3702 TO-92B 40B
2N4425 2N3702 TO-92B 40B
2N4926 TO-39 200Y
2N4927 2N4926 TO-39 250Y
(2) Hfe in X, Y, A, B, C categories. X*€5, Y«100, A«165, B^300, Cs500.
\ VCEO, H FE ^
\ USE
\. Note) SMALL SIGNAL AND MEDIUM SPEED SWITCHES VOLTAGE
N N
X X
s S < < <
8 '5
o 6 < < <
z
n 8 i » » n »
a o
t 4r
DEVICE DATA
TYPE SHEET CASE^
2N4964 TO-106 -40A
2N4965 2N4964 TO-106 -40B
2N4966 2N4964 TO-106 40A
2N4967 2N4964 TO-106 40B
2N4968 2N4964 TO-106 25A
2N4994 TO-92F 45Y
2N4995 2N4994 TO-92F 45A
2N5086 TO-92A -50B
2N5087 2N5086 TO-92A -50C
2N5088 2NS086 TO-92A 30C
2N5089 2N5086 TO-92A 25C
2N5103 2N3823 TO-72 N-JFET
2N5104 2N3823 TO-72 N-JFET
2N5130 2N3563 TO-106 12X
2N5132 2N3563 TO-106 20X
2N5138 2N3565 TO-106 -30B
2N5163 2N3823 TO-106 N-JFET
2N5172 MPS6565 TO-92B 25B
2N5209 TO-92A 50B
2N5210 2N5209 TO-92A 50C
2N5220 2N3702 TO-92A 15A
2N5221 2N3702 TO-92A -15A
2N5225 2N3702 TO-92A 25A
2N5226 2N3702 TO-92A -25A
2N5232 2N3691 TO-92B 50B
2N5232A 2N3691 TO-92B 50B
2N5245 2N3823 TO-92DE N-JFET
2N5246 2N3823 TO-92DE N-JFET
2N5247 2N3823 TO-92DE N-JFET
2N5248 2N3B23 TO-92DA N-JFET
2N5294 TO-220B 70X (low speed)
2N5296 2N5294 TO-220B 40X (low speed)

2N5298 2N5294 TO-220B 60X (low speed)
2N5354 2N3702 TO-92B -25Y
2N5355 2N3702 TO-92B -25A
2N5356 2N3702 TO-92B -25B
1
(2) HFE in X, Y, A, B, C categories. X«65, Y«100, A«*165, B«300, C«500.
\ VCEO, Hfe ^
\ USE
N. Note) SMALL SIGNAL AND MEDIUM SPEED SWITCHES VOLTAGE
N
X X
S s S < < <
8 3 in < < <
z d c! b
8 8 i 8 8 8 8 8 8
4r Jr
o o o u o o o
DEVICE DATA
TYPE SHEET CASES
2N5365 2N3702 TO-92B -40Y
2N5366 2N3702 TO-92B -40A
2N5367 2N3702 TO-92B -40B
2N5368 2N5368 TO-92F 30Y
2N5369 2N5368 TO-92F 30A
2N5370 2NS368 TO-92F 30B
2N5371 TO-92F 30A
2N5372 2N5368 TO-92F -30Y
2N5373 2N5368 TO-92F -30A
2N5374 2N5368 TO-92F -30B
2N5375 2N5368 TO-92F -30A
2N5400 TO-92A -120Y
2N5401 2N5400 TO-92A -150Y
2N5418 2N3702 TO-92B 25Y
2N5419 2N3702 TO-92B 25A
2N5420 2N3702 TO-92B 25B
2N5447 TO-92F -25A
2N5448 2N5447 TO-92F -30Y
2N5449 2NS447 TO-92F 30A
-
2N5450 2N5447 TO-92F 30Y
2N5451 2N3702 TO-92F 20A
2N5457 2N3823 TO-92DD N-JFET
2N5458 2N3823 TO-92DD N-JFET
2N5459 2N3823 TO-92DD N-JFET
2N5484 2N3823 TO-92DD N-JFET
2N5485 2N3823 TO-92DD N-JFET
2N5486 2N3823 TO-92DD N-JFET
2N5490 TO-220B 40X(low speed)
2N5492 2N5490 TO-220B 55X (low speed)
2N5494 2N5490 TO-220B 40X (low speed)
2N5496 2N5490 TO-220B 70X (low speed)
2N5550 2NS400 TO-92A 140Y
2N5551 2NS400 TO-92A 160A
2N5556 2N3823 TO-72 N-JFET
2N5557 2N3823 TO-72 N-JFET
2N5558 2N3823 TO-72 N-JFET
(2) Hfe in X, Y, A, B, C categories. X«65, Y«100, A~165, B«*300, C«*500.
1
\ VcEO, H FE ^
\ USE
\^ (Note) SMALL SIGNAL AND MEDIUM SPEED SWITCHES VOLTAGE
N
X X
s < < <
8 5 < < <
Z ci b m
8 5 8 8 8 8 8 8
-i
DEVICE DATA
TYPE SHEET CASE\
2N5668 2N3823 TO-92 DD N-JFET
2N5669 2N3823 TO-92DD N-JFET
2N5670 2N3823 TO-92DD N-JFET
2N5810 TO-92F 25A
2N5811 2N5810 TO-92 F -25A
2N5812 2N5810 TO-92F 25B
2N5813 2N5810 T0-92F -25B
2N5814 2N5810 TO-92F 40Y
2N5815 2N5810 TO-92F -40Y
2N5816 2N5810 TO-92F 40A
2N5817 2N5810 TO-92 F -40A
2N5818 2N5810 TO-92F 40B
2N5819 2N5810 TO-92F -40B
2N5820 TO-92F 60Y
2N5821 2N5820 TO-92F -60Y
2N5822 2N5820 TO-92 F 60A
2N5823 2N5820 TO-92F -60A
2N5824 TO-92F 40Y
2N5825 2N5824 TO-92 F 40A
2N5826 2N5824 TO-92F 40A
2N5827 2N5824 TO-92F 40B
2N5828 2N5824 TO-92 F 40C
2N6027 TO-92 Program nable Unijunction Transistor
2N6028 2N6027 TO-92 Program nable Unijunction Transistor
2N6107 2N61 1 TO-220B -70X

2N6109 2N6111 TO-220B -50Y
2N6111 TO-220B -30Y
2N6121 TO-220B 45X
2N6122 2N6121 TO-220B 60X
2N6123 2N6121 TO-220B 80X
2N6124 TO-220B -45X
2N6125 2N6124 TO-220B -60X
2N6126 2N6124 TO-220B -80X
2N6129 TO-220B 40X
2N6130 2N6129 TO-220B 60X
2N6131 2N6129 TO-220B 80X
(2) Hfe in X, Y, A, B, C categories. X~65, Y<*100, A«165, B«300, C«500.
\\ VcEO, H FE \
\ USE
(Note) \ SMALL SIGNAL AND MEDIUM SPEED SWITCHES VOLTAGE
N
tsl
X X
CD
< < <
'5
z
in
d < < <
ci d
ii
s 8 8 8 » 8 8
3 o o o o o o
DEVICE DATA
TYPE SHEET CASES
2N6132 TO-220B -40X
2N6133 2N6132 TO-220B -60X
2N6134 2N6132 TO-220B -80X
2N6218 TO-92F 300X
2N6219 2N6218 TO-92F 250X
2N6220 2N6218 TO-92F 200Y
2N6221 2N6218 TO-92F 150Y
2N6288 TO-220B 30Y
2N6290 2N6288 TO-220B 50Y
2N6292 2N6288 TO-220B 70X
2N6473 TO-220B 100X
2N6474 2N6473 TO-220B 120X
2N6475 2N6473 TO-220B -100X
2N6476 2N6473 TO-220B 120X
2SA473 TO-220B -30A

2SA489 TO-220B -60X
2SA490 TO-220B -40Y
2SA539 TO-92B -45Y
2SA564 TO-92B -25B
2SA564A TO-92B -45B
2SA666 TO-92B -25B
2SA671 TO-220B -50Y
2SA719 TO-92B -25A
2SA720 TO-92B -50A
2SA730 TO-92B -25A
2SA731 TO-92B -50A
2SA816 TO-220B -80Y
2SA817 TO-92B -80Y
2SB512 TO-220B -60X

2SB512A 2SB512 TO-220B -80X
I
(2) Hfe in X, Y, A, B, C categories. X*€5, YÎOO, A«165, B«300, C«500.
\ VCEO, H FE ^
\ USE
\. Note) SMALL SIGNAL AND MEDIUM SPEED SWITCHES VOLTAGE
I I
5 Si < < <
'5
d < < <
z n d
8 5 8 8 8 8 8
3 o o o o o
DEVICE ^ DATA
TYPE ' SHEET CASES
2SB596 2SA489 TO-220B -80X

2SB604 2SA489 TO-220B -70X
2SC644 2SA666 TO-92B 25B

2SC789 TO-220B 60X
2SC790 2SA490 TO-220B 40Y
2SC815 2SA539 TO-92B 45Y
2SC828 2SA564 TO-92B 25B
2SC828A 2SA564 TO-92B 45B
2SC829 TO-92B 20Y
2SC838 TO-92B 25Y
2SC839 2SC838 TO-92B 25Y
2SC922 TO-92B 20Y
2SC1047 2SC922 TO-92B 20Y
2SC1048 TO-39 200Y
2SC1061 2SA671 TO-220B 50Y
2SC1173 2SA473 TO-220B 30A
2SC1317 2SA719 TO-92B 25A
2SC1318 2SA719 TO-92B 50A
2SC1346 2SA719 TO-92B 25A
2SC1347 2SA719 TO-92B 50A
2SC1626 2SA816 TO-220B 80Y
2SC1627 2SA817 TO-92B 80Y
2SD234 TO-220B 50X lowspeled)

2SD235 2SD234 TO-220B 40X (low speed)
2SD365 2SB512 TO-220B 60X
2S036SA 2SB512 TO-220B 80X
2SD526 2SC789 TO-220B 80X
2SD570 2SC789 TO-220B 70X
(2) Hfe in X, Y, A, B, C categories. X«65, Y~100, A«165, B«300, C«500.
BC107 f 8,9 BC167 f 8,9 BC207,8,9 BC237,8,9 BC317,8,9
NPN SILICON AF SMALL SIGNAL TRANSISTORS
fm ABOTE TYPES ABE NPN SILICON PLANAR EPITAXIAL TRANSISTORS TOR USE IN
AF SMALL
SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS.
BC107, 8, 9 are complementary to BC177, 8, 9

RCI67, 8, 9 are complementary to BC257, 8, 9
BC317. 8, 9 are complementary to BC320, 1, 2
30-18 TO-92B T0-106 TO-92y T0-92A
CASE 9
ICBE ECB CBE CEB EBC
BC107,8,9 BC167,8,9 BC207,8,9 BC237.8.9 BC317,8,9
ABSOLUTE MAXIMUM RATINGS
TYPE VCBO VCES IC(DC) p tot TJ. Tstg

(v) () ($f (ff (A) 0*0*M
BC107 50 50 45 6 100 300

BC108 30 30 20 100 300
5 -55 to 175°C
BC109 30 30 20 5 100 300
BC167 50 50 45 6 100 300

BC168 30 30 20 5 100 300 -55 to 1500c
BC169 30 30 20 5 100 300
BC207 50 45 5 100 300

BC208 25 25 5 100 300 -55 to 1250c
BC209 25 25 5 100 300
BC237 50 50 45 6 100 300-

BC238 30 30 20 n 100 300 -55 to 1500c
BC239 30 30 20 5 100 300
BC317 50 45 6 150 310

BC318 45 30 5 150 310 -55 to 1500c
BC319 1 30 20 5 150 .310
* Total Power Dis sipation B T A*25°c
BC1 07,8,9 BC1 67,8,9 BC207,8,9 BC237,8,9 BC31 7,8,9
ELECTRICAL CHARACTERISTICS TA-25°C unless otherwise noted)

(
PARAMETER SYMBOL MIN TYP MAX UNIT TEST COHDITIOBS
Collector-Base Breakdown Voltage BVqbo V iC-ltyiA Ib-0

!
Collector-Emitter Breakdown Voltage LVCEO • Bote 1 V IC»2mA Ib-0

Emitter-Base Breakdown Voltage BVebO V lE-lpA IC-O
1
Collector Cutoff Current ices
BC107, 108, 109 15 nA VCE-Vnus VBE-O
\
BC167, 168, 169 onl y 4 nA VCE-VCES VBE-0
f
BC237, 238, 239 J Ta-125°C
Collector Cutoff Current icbo 15 nA VCB-40V Ie-0
BC207 only 15 A VCB-40V lE-0
^
Ta-65°C
icbo 15 nA VcB"20V Ie-0
BC208, 209 only
15 ^ VCB-20V
T1-650C
IE-0
Icbo 30 nA VCB-20V IE-0

BC317, 318, 319 only
15 P* VCB-20V IB-0
Ta-IOOOC
Collector-Emitter Saturation Voltage VcE(sat)»
BC107, 108, 109"| 0.07 0.25 V IC-10mA IB-0. 5mA
BC167, 168, 169 I 0.22 0.6 V IC-lOOmA IB-5«A
°n y
BC207, 208, 209 [
BC237, 238, 239 J
BC317, 318, 319 only VCE(sat)* 0.07 0.2 V lC-10mA lB-0.5mA

0.2 0.5 V IC-lOOmA lB-5mA
Base-Emitter Saturation Voltage VBE(sat)*
BC107, 108, 109 0.7 0.83 V IC-10mA lB-0.5mA
\
BC167, 168, 169 \ only 0.9 1.05 V IC-lOOmA IB-5mA
BC237, 238', 259 i
Base-Emitter Voltage All types VBE » 0.55 O.63 0.7 V IC-2mA VCE-5V
BC317, 318, 319 only 0.68 0.77 V IC-10mA VCE-5V
Current Gain-Bandwidth PrAduct fT
BC107, 108, 109 1
BC167, 168, 169 > 150 250 MHz IC-lOmA VCE-5V
only
BC237, 238, 239 1
Collector-Base Capacitance Cob VCB-10V Ib-0
BC107. 108. 109 3.2 6.0 pF f-lMHz
BC167. 168, 169 2.7 4.5 pF
BC20t- 208. 209 2.7 2.0 PF
BC23?, 238, 239
BC317, 318, 319
2.7 4."5
W~
2.7 4.0 PF
Noise Figure NF IC-0.2mA VCE-5V
BC107, 108 2 10 dB RG-2Kxl f-lkHz
BC167, 168 2 10 dB A f -200Hz
BC207, 208 2 10 dB
BC237, 238 2 10 dB
BC317, 318 2 6 dB ..
* Pulse Tent s Pulse w idth-0.3mS, Duty Cycle-1^.

Note 1 : equal to the value of absolute maximum rp+ J.ngs.
BC107 f 8,9 BC167,8,9 BC207,8,9 BC237,8,9 BC317,8,9
PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITIONS

Noise Figure NF IC-0.2mA Vce-5T
BC109-J 1.5 dB RG-2Kn. f-lkHa
4
BC169 af -200Ha
BC209 > only
BC239 IC-0.2mA VCE-5V
BC319 > 1.2 4 dB
RT.-2KA f-WHz-l'iKHz
D.C. CURRENT GAIN (HFE) © VCE-5V Ta-25°C

BC107, 167, 207, 237, 317 BC107, 167, 207, 237, 317
at Ic BC108, 168, 208, 238, 318 BC108, 168, 208, 238, 318 BC108, 168, 208, 238, 318
BC109, 169, 209, 239, 319 BC109, 169, 209, 239, 319
(Pulsed)
Hj-e GROUP A HPE GROUP B Rye group c
MIN TYP MAX MIN TYP MAX MIN TYP MAX
0.01mA 40 90 40 170 100 290
2mA 110 170 220 200 300 450 420 520 800
100mA 100 160 270
h-PARAMETERS @ IC-2mA VCE-5V f-lkHz Ta-2'5 C (Note 2)
h - PARAMETER HFE GROUP A HFE GROUP B HpE GROUP C

SYMBOL UNIT
Input Impedance hie 1.6 2.7 4-5 3.2 4-5 8.5 6 8.7 15 Kn.
Voltage Feedback Ratio h re 1.5 -4
2 3 xlO
Small Signal Current Gain hfe 125 190 260 240 330 500 450 580 900
Output Admittance h oe 18 30 30 60 60 110 jiv
TYPICAL CHARACTERISTICS AT TA -25°C (Pulse Test)
O.C. CURRENT GAIN V BE AND vCE(iat)

VS COLLECTOR CURRENT VS COLLECTOR CURRENT
'
H rc
IIF II III
V Cfe-5V
600 I
|grck PC
400
|gro 3PB
?on --[Jill- GROUP A

'1 ""--.
111 111
100
•c ImAI lc(mA)
Note 2 : This table is not applicable to BC207,8,9.

BC107,8,9 80167,8,9 BC207 8 9 BC237,8,9 BC317,8,9
f f
TYPICAL CHARACTERISTICS (T A-2S°C UNLESS OTHERWISE SPECIFIED)
COMMON EMITTER CURRENT GAIN - BANDWIDTH PRODUCT

OUTPUT CHARACTERISTICS VS COLLECTOR CURRENT
*T
•c
5tiA~ (MHz)
<mA*|
1.5
> r
CE -6V
I
4uA
I
v
200 \
*
2mA
100
(
B-1»jA
Hil
12 V CE (V)
3 4 1 10
COLLECTOR CUTOFF CURRENT i-P>

1 ETEF S (NORMALIZED)
VS AMBIENT TEMPERATURE VS COL LECTOR CURRENT
200
100
CBO V CE -5\/
InA) I* (N) >
N f-IKHz
h rt
10
vcb -~»=i
l:-0
1.0 = h f.
"
*m
0.2
0.1
40 80 120 160
TA (°CI
l
c (mA)
COLLECTOR-BASE CAPACITANCE BROAD BAND NOISE FIGURE
VS COLLECTOR-BASE VOLTAGE VS COLLECTOR CURRENT
Cob NF V CE -BV '
'
|
( P F) 1 1
II
(dB)
Rq-5001 \
6 E-0 -
MMHz
— XQ-Ih 2 R 5" K&-
u6 f JO-9^~ R G-
«(5-6WI"
"'
1 G -»MCft
4 6 100 1000
V CB <V)
lC (>«A)
2.78.4500B/4500B
BC140 BC141
NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES
THE BC140, BC141 ARE NPW SILICON PLANAR CASE TO-39

EPITAXIAL TRANSISTORS RECOMMENDED TOR
AF DRIVERS AND OUTFWTS, AS WELL AS TOR
SWITCHnB APPLICATIONS UP TO 1 AMPERE.
THE BC140, BC141 A1E COMPLEMENTART TO
THE PNP TYPE BC160, BC161 RB3PECTIVBLY.
ABSOMTB MAXIMDM RATINGS

f
C S B
Collector-Quitter Voltage ( yBE-0) VCES 60V 100V

Collector-Emitter Voltage (IB-O)
CEO 40V 60V
Baitter-Baae Voltage VEBO 7V 7V
Collector Current
ic 1A
Total Power Dissipation (• Tc <45°C)
Ptot 3.7W
(•TA<45°C) 650mW
Operating Junction & Storage Temperature
*j« T8tg -55 to 175°C
ELECTRICAL CHARACTERISTICS (
TA-25°C unless otherwise noted)
PARAMETER BC140 BC141
SYMBOL
MIN TYPMAX MIN TYP MAX UNIT TEST CONDITIONS
Collector-Emitter Breakdown Voltage BVcES 80 100 V IC-O.lmA VBE-0
Collector-Emitter Breakdown Voltage LVCEO • 40 60 V lC-50mA IB-0
Emitter-Base Breakdown Voltage BVbbO 7 7 V lE-0.1mA IC-O
Collector Cutoff Current ices 100 100 nA VCES-60V
100 100 VcES"60^ TA-I50t
Collector-Emitter Saturation Voltage CE(sat) • 1 1 V IC-1A IB-0.1A
Base-Emitter Voltage VBB • 1.8 1.8 V IC-1A VCE-1V
B.C. Current Gain HpE » 40 250 40 250 IC-IOObA VCE-IV
Group 6 40 100 40 100
Oroup 10 63 160 63 160
Group 16 100 250 100 250
Bra 1 ,
HpE Matched Pair Ratio 1.41 1.41 IC-100mA VCE-1V
HPE 2
Current Gain-Bandwidth Product fT 50 150 50 150 MHz IC-50B1A VcE-lOV
Collector-Base Capacitance Cob 10 25 10 25 I* VCB-lOV IE-O
f-lMHz
Emitter-Base Capacitance Cib 80 80 PP VEB-0.5V Ic-0
f-lMHz
Turn-On Time ton 250 250 nS IC-100mA IB1-5«U
Turn-Of f Time toff 850 850 nS It-lOOmA
* Pulse Test
IB1—lB2-5mA
1 Pulse Width-0.3mS, Du ty Cycle-1 %
BC140 BC141
SWITCHIWS TIME TEST CIRCTJIT (ton, toff)
to Ht
TYPICAL CHARACTERISTICS
A —
\
l*t ot va TA
g
Hfe (NORMALIZED) vs ic
3
p tot
&•
(W)
•5 N
V7> *f,
1
\V
i24?«t
iU so inm 1C
1000
TA (°C)
VCE(sat) & VflE(sat) & Vbe vs IC

l.Or
(MHx)
10 100 1000 10 100 1000

*C (mA) IC («A)
1. 78.8100 A/B
BC146
MINIATURE NPN AF LOW NOISE
SILICON PLANAR EPITAXIAL TRANSISTOR
MECHANICAL OUTLINE
GENERAL DESCRIPTION
MT-42
The BC 146 aNPNsilicon planar epitaxial transistor
is
Oi4MM
in miniature plastic package designed for hearing 7
aids, watches, paging systems and other equipment i
i j. =i |
where small size is of paramount importance. The I
BC 146 is complementary to PNP BC 200. Z.1HU 10am
ALL OIMENSIONS IN I

Collector-Base Voltage 20V
Collector-Emitter Voltage 20V
Emitter-Base Voltage 4V
Collector Current 50mA
Total Power Dissipation at T» <45°C 50mw
Junction Temperature 125°C
Storage Temperature Range -66°Cto+125°C
THERMAL RESISTANCE
Junction to Ambient 1.6°C/mW
ELECTRICAL CHARACTERISTICS AT TA » 25°C

BC146R BC146Y BC146G
PARAMETER SYMBOL MIN TYP MAX MIN TYP MAX MIN TYP MAX UNIT TEST CONDITIONS
Collactor-Bata Cutoff (
CBO 100 100 100 nA VCB-20V Ie-O
Current
Collector-Emitter Knee VCEK 200 200 200 mV IC*2mA l
B
»w»lue
Voltage for which l -2 AnA
c
endVcE-W
B«w-Emittir Voltage VBE 570 670 570 mV Vce-0.6V l
c -0.2mA
Base-Emitter Voltage Vbe 630 630 630 mV VCE"' V l
c-2mA
DC Current Gain hfe 80 120 200 350 VCE-0.5V c-0.2mA
140 220 280 380 660 l
DC Current Gain
c-2mA
Hfe 100 140 280 Vce-1V l
Noise Figure NF 1.6 1.6 4 1.5 dB Vce-6V l -0.2mA

c
Rg-2KQ
f-30Hz-15KHz
Transition Frequency MHz
c-2mA
»T 80 110 160 VCE-6V l
Collector Capacitance C * 2.6 2.5 2.6 pF' VCB-5V l -0

£
f-IMHz
TYPICAL h-PARAMETERS AT V CE=0.5V, c-0.2mA, MKHz

PARAMETER SYMBOL BC 146R BC146Y BC146G UNIT
Input Impedance h 20 30 45
ie Kft
Reverse Voltage Transfer Ratio h 15 25 40 xlOr*
re
Small Signal Current Gain "fe 130 240 400
Output Admittance hoe 15 20 35 HO
BC146
TYPICAL ELECTRlCA'. CHARACTERISTICS AT TA - 25°C
DC CURRENT GAIN VERSUS COLLECTOR CURRENT
nun ID
JCE-° SV
I
\W
- iilili 4 1 1 \
11
nTjT 1!
ilk 1
± Ill
ill
11 ~i IL
T|BC14eY,.
ijjl
iijll IP
BC14I S+-
IT
liiilLj
1
III
pulse test
i 1 1 iniii i i
III
ii nil
COLLECTOR CURRENT IN mA COLLECTOR CURRENT IN mA
WIDE BAND NOISE FIGURE
VCE- W
1
1
1 III Hi -15 KH
30
Rg-SOC .a
Rg • 1 K
jRa-211
I 1
COLLECTOR CURRENT IN mA COLLECTOR CURRENT IN »A
11.77.4500B
BC160 BC161
PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES
THE BC160, BC161 ARE PNP SILICON PLANAR CASE TO- 59

EPITAXIAL TRANSISTORS RECOMMENDED FOR
AF DRIVERS AND OUTPUTS, AS WELL AS FOR
SWITCHING APPLICATIONS UP TO 1 AMPERE.
THE BC160, BC161 ARE COMPLEMENTARY TO
THE NPN TYPE BC140, BC141 RESPECTIVELY.
ABSOLUTE MAXIMUM RATINGS BC160 BC161

Collector-Emitter Voltage (VBE-O) -VCES 40V 60V
Collector-Emitter Voltage (Ib-O) -VCEO 40V 60V
Emitter-Base Voltage -VEBO 5V 5V
Collector Current -ic 1A
Total Power Dissipation (» Tc<450c) Ptot 3.7W
(« T A <45©c) 650mW
Operating Junction & Storage Temperature Tj» T 8 tg -55 to 175°C
ELECTRICAL CHARACTERISTICS (Ta-25°C unless otherwise noted)
PARAMETER BC160 BC161

SYMBOL UNIT TEST CONDITIONS
MIN TYP MAX MIN TYP MAX
Collector-Emitter Breakdown Voltage -BTCES 40 60 V -IC-O.lmA VBE-0
Collector-Emitter Breakdown Voltage -LVCEO * 40 60 V -IC-50mA IB-0
Emitter-Base Breakdown Voltage -BVgBO 5 5 V -lE-0.1mA IC-0
Collector Cutoff Current -Ices 100 100 nA VCE-VCES
100 100 VCE-VCES Ta-150°C
Collector-Emitter Saturation Voltage -VCE(saV * 1 1 V -IC-1A -IB-0.1A
Base-Emitter Voltage -VBE * 1.7 1.7 V -IC-1A -VCE-1V
D.C. Current Gain HFE * 40 250 40 250 -IC-lOOmA -VCE-1V

Group 6 40 100 40 100
Group 10 63 160 63 160
Group 16 100 250 100 250
HpE 1 *
HpE Matched Pair Ratio 1.41 1.41 -IC-lOOmA -VCE-1V
HFE 2
Current Gain-Bandwidth Product fT 50 140 50 140 MHz -IC-50mA -VCE-10V
Collector-Base Capacitance Cob 18 30 18 30 PF -VCB-10V Ib-O
f-lMHz
Emitter-Base Capacitance Cib 180 180 PF -VEB-0.5V IC"0
f-lMHz
Turn-On Time on 500 500 nS -IC-100mA-lBl-5niA
Turn-Off Time toff 650 650 nS -IC-100mA

-lBl-lB2»5mA
* Pulse Test 1 Pulse Width-0.5mS, Duty Cycle-1^
BC160 BC161
SWITCHING TIME TEST CIRCUIT ôn, t ff)
•to *c
•5v -aw
Ptot V3 ta HFE (NORMALIZED) vs IC

4 2.0
lllll
T A -25° C
iiiiii
"TPuls L'eat
— 1.6
3
N
M
II
^tot
fe
VL* i 1,z "."lOtf I'l
3?ffiir II , ||l
O
(V)
^ ?
A 5. 0.8 JtK&& r
I
^JJbj
fjt„
^ I 0.4
mil
>Si2t
n Hill lllll
50 100 150 200 10 100 1000

-
ta IC (mA)
(°c)
8at ) yB ^( a t ) Vb vs I c fT
i yp E ( ^j f ^ ? . - 250 vs *C
*A- 25°C
-VC1 >10V
200
|i|
150 ml
-VOLT (MHa)) 1
100 1
30 ||
II
,
mil
1000 10 100 1000
" IC (mA)
1.78.0810A/B
BC1 77,8,9 BC204,5,6 BC257,8,9 BC307,8,9 BC320,1,2
PNP SILICON AF SMALL SIGNAL TRANSISTORS
THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL
SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS.
BC177i 8, 9 are complementary to BC107, 8, 9

T0-18 T0-106 T0-92B T0-92F T0-92A
CASE
CBS CBE ECB CEB E3C
BC177.8.9 BC204.5.6 BC257.8.9 BC307,8,9 BC320.1.2

TYPE "VCBO "VCES -VCEO -VEBO ptot « T0» T 8 tg
-IC(DC)
(V) () (V) (v) (mA) (mW)
BC177 50 50 45 5 100 300
BC178 30 30 25 5 100 300 -55 to 175°C
BC179 25 25 20 5 100 300
BC204 50 45 5 100 300

BC205 25 20 5 100 300 -55 to 125°C
BC206 25 20 5 100 300
BC257 50 50 45 100 300

5
BC258 30 30 25 5 100 300 -55 to 150°C
BC259 25 25 20 5 100 500
BC307 50 50 45 5 100 300

BC508 30 30 25 5 100 300 -55 to 150°c
BC309 25 25 20 5 100 300
BC320 50 45 6 150 310

BC321 45 30 5 150 310 -55 to 150°C
BC522 30 20 5 150 310
Total Power Dissipation ® ?k< 2505
BC177 8 9 BC204
# f f 5,6 BC257,8,9 BC307,8,9 BC320,1,2
ELECTRICAL CHARACTERISTICS (TA-25°C unless otherwise noted)
Collector-Base Breakdown Voltage -BVCBO V -IC-10uA lE-0

t
Collector-Emitter Breakdown Voltage -LVCEO * Note 1 V -IC-2mA IB-O
Emitter-Base Breakdown Voltage -BVEBO V -lE-lpA ic-o

1
Collector Cutoff Current -Ices

BC177, 178, 179 15 nA VCE-VCES VBE-0
1
BC257, 258, 259 onl y 4 HA VCE-VCES VBE-O
J
BG307, J08, 509 J T A -125°C
Collector Cutoff Current -icbo 50 nA -VCB-45V lK-0

BC204 only 3 uA -VCB-45V IE-O
TA-65°C
-ICBO 50 nA -VCB-20V IR-O

BC205, 206 only 3 1* -VCB-20V IE-O
Ta-65°C
-Icbo 50 nA -VCB-20V I F,-0

BC320, 321, 522 only I E -0
15 PA -VCB-20V
Ta-IOOOC
Collector-Emitter Saturation Voltage -VcE(sat)*

0.1 0.3 V -IC=10mA -lB-0.5mA
All types
0.25 V -IC-lOOmA -lB-5mA
Collector-Emitter Knee Voltage -VCEK

BC177, 178, 179 \ 0.3 0.6 V -IC-10mA, IB-value at
onl
BC307, 308, 309 J which -Ic -11mA -Vce-IV
Base-Emitter Saturation Voltage -VBE(sat)*

0.72 V -IC-10mA -lB-0.5mA
All types 0.92 V -IC -100mA -lB-5mA
Base-Snitter Voltage All types -VBE • 0.6 0.65 0.75 V -lC-2mA -VCE-5V
BC320, 521, 522 only -VBE * 0.7 0.77 V -IC-10mA -VCE-5V
Current Gain-Bandwidth Product fT 180 MHz -IC-10mA -VCE-5V
Collector-Base Capacitance Cob -VC B-10V IE-O

3.6 f-lMHz
BC177. 178. 179 7 p!
BCScV. SO?. 26o 3.2
6 pS
p*'
BC25?: 256! 259 5.3
T3C307,308. 309 5.2 6 pP
BC520, 521, 522 5.2 4 PF
Noise Figure NP -IC-0.2mi -VCE-5V

BC177, 178 2 10 dB RG-2Kn f-lkHz
BC204, 205 2 10 dB Af -200Hz
BC257, 258 2 10 dB
BC507, 508 2 10 dB
BC520, 321 2 6 dB
* Pulse Test t Pulse Width-0.3mS, Duty Cycle-1^
Note 1 t equal to the value of absolute maximum ratings.
BC177 8 9 BC204,5,6 BC257 8 9 BC307,8,9 BC320,1,2
f r f (

Noise Figure NF -IC-0.2mA -Vng"5V
BC179*\ 1.2 4 dB RG-2KA f-lKHz
At .200Hz
BC259 jonly
-IC-0.2mA -YCE-5V
BC309
1.2 4 dB RG-2KA f-30Hl-15KH«
BC322 /
D.C. CURRENT GAIN (HpE) © -V&I-5V TA-25°C

BC177, 204,257, 307, 320 BC177,204,257,307,320 BC177, 204,257,307, 320
at-I C BC178 , 205 , 258 , 308 , 321 BC178,205,258,3O8,321 BC178, 205,258, 308, 321 BC178,205,258,308,321
BC179,206,259,309,322 BC179.206, 259,309, 322
(Pulsed)
R>E GROUP VI HFE GROUP A HFE GROUP B HFE GROUP C
M» TTP MAX MIN TYP MAX MIN TTP MAX MIN TYP MAX
0.01mA 70 110 200 330
2mA 70 110 140 110 170 220 200 300 450 420 520 800
100mA 60 80 140 240
h - PARAMETERS G -IC-2mA - VCE-5V f-lkH» TA-25OC (Note 2)
h - PARAMETER HFE GROUP VI Rfe GROUP A HFE GROUP B HFE GROUP C

SYMBOL UNIT
MEN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
Input Impedance Hie 1.4 2.7 4.5 8.7 EA
Voltage Feedback Ratio -4
hre 2.5 3 3.5 4 xlO
Small Signal Current Gain hf e 75 HO 150 125 190 260 240 33O 500 450 580 900
Output Admittance hoe 20 25 60 utt
35
TYPICAL CHARACTERISTICS AT TA-25°C (Pulse Test)
D.C CURRENT GAIN V BE AND v CE(s»t)

VS COLLECTOR CURRENT vs COLLECTOR CURRENT
I I 1
Hfe l-V) I
-V,:e-sv
1.2 I
53
<J ff-TTnr 1.0 J
Sf Ve E
1 "•""
0.8 V CE"5V T
"f
rfl 3UP? _
0.6
200
TTmIIi
IOUP A
-. 0.4 1 ITIII1
.2 *„, vci:<««) T
rar
GROUP VI
0.2
J
I • 1
n 11 111111 1 :*=dh-HHHtT
-IC (mA) -IC (mA)
Note 2 s This table is not applicable to BC204,5,6.

BC1 77,8,9 BC204,5,6 BC257,8,9 BC307,8,9 BC320,1,2
TYPICAL CHARACTERISTICS (TA-25°C UNLESS OTHERWISE SPECIFIED)

OUTPUT CHARACTERISTICS vs COLLECTOR CURRENT
i
-'c 6}iA 1 II
|
(MHz)
(mAK
5)U I
1.5 'CE- >V
4^'
f~ *t
û 100
L—Ib-1j»A-
1
1 1 ||
1 10
CE (V) -IC ImAl
COLLECTOR CUTOFF CURRENT h-PARAMETERS (NORMALIZED)

VS AMBIENT TEMPERATURE VS COLLECTOR CURRENT
200
100
-•CBO ih r v„<— 5V
InA) f-IKHz
Im(N)
^Cl -J0V re
l r-0
1
— <'
"oe
ai
40 80 120 160
TA (°C) -l c (mA)

Cob
-V CE -6V "|
IpF)
(dB)
Illllll
1 Mil
6
R q -500a|[
E*°
hi MHz
3 mi
i D-2 3 r 3"' t n
I <3 )£ J-_"~
iu-9 2 " "G"
„
—Bc
Rq-IOK*-
2 4 6 100 1000
~V CB (V)
-ic (A'A)
2.78.0430B/0450B
BC182 BC212
COMPLEMENTARY
SILICON AF SMALL SIGNAL AMPLIFIERS & DRIVERS
CASE TO-92F
THE BC182(NPM) AND BC212(PNP) ARE COMPLEMENTARY
SILICON PLARAR EPITAXIAL TRANSISTORS TOR USE IN
AF SMALL SIGNAL AMPLIFIERS AND DRIVERS, AS WELL
AS FOR LOW POWER UNIVERSAL APPLICATIONS. BOTH
TYPES FEATURE GOOD LINEARIS: OF BC CURRENT GAIN".
CBB
ABSOLUTE MAXIMUM RATINGS *"-•*—• BC182(NPH) BC212(PNP)

Collector-Base Voltage 60V 60V
Collector-Emitter Voltage
CBO
VCBO 50V 50T
Emitter-Base Voltage VEBO 6V 5V
Collector Current ic 200mA
Total Power Dissipation (Ta*25°C) *tot 300mV
derate 2. 4mV/°C above 25°C
Operating Junction & Storage Temperature Tj, T*tg -55 to 1500c
PARAMETER Bci82(mr) BC212(PVP)

Mil TYP;. MAX KEN TYP MAX
Collector-Base Breakdown Voltage BVCBO 60 60 V IC-0.01mA IB-O
Collector-Emitter Breakdown LVcEO * 50 '.
I '.
•
50 V lC-2mA IB-O
Voltage
Emitter-Base Breakdown Voltage BVBBO 6 5 V IE-O.OUA IC-0

Collector Cutoff Current ICBO 15 nA VCB-50V IB-O
15 nA VCB-30V Ij-0
Bnitter Cutoff Current lEBO 15 15 nA VEB-4V Ic-0
Collector-Emitter Saturation CE(sat )* 0.05 0.2« 0.05 V IC-10aA lB-0.5*i
Voltage 0.12 0.6 O.14 0.6 V IC-lOOaA IB-5«A
Base-Emitter Saturation Voltage
BE(sat * 0.85 1.2 0.85 1.1 V IC-lCOaA I>-5^
Base-Emitter Voltage VBE * 0.55 0.62 p.7 0.55 0.62 0.7 V IC-2mA VCE-5V
D.C. Current Gain HFE * 40 40 Ic -10nA VCE-5V
120 4€0 60 220 lC-2mA VCE-5V
80 110 IC-100mA VCE-5V
Small Signal Current Gain hfe
,'
IC-2mA VCE-5V
Group A 125 260 100 300 f-lkHs
Group B 240 5J» 200 400
Current Gain-Bandwidth Product fT 150 220 ,
200 300 MHs IC-lCeU. VCE-5V
BC182 BC212
PARAMETER SYMBOL BC182(NPN) BC212(PNP) UNIT TEST CONDITIONS

Mill TYP MAX MIN TYP MAX
Collector-Base Capacitance Cob 3.7 5 pF YCB-10V lE-0
f-lMHz
Noise Figure NP 2 10 1.5 10 dB IC-0.2mA 7CE-5V
RQ-21CA f-lkHz
A f-200Hz
* Pulse Test i Pulse Width«0.3mS, Duty Cycle-lj£
TYPICAL CHARACTERISTICS (
TA-25°C unless otherwise noted
Ptot vs TA Hpe (NORMALIZED) vs ic

0.8 2.0
II 1 IVCE-5V
0.7
~\
0.6 S- nun
N
tot
0.5 %\4 M
BC212 Mi'
1
0.4
(W) vl r"- r ifl2.
0.3 v^ V* Bl
w 1 1
0.2 k
V"
to
0.4
III
III
1
\
0.1 s*
III - .11
50 100 150 200 0.1 1 10 50 200
TA
(°C) IC (mA)
fT vs Ic YCE( 3 at) & yB E(3at) vs Ic

400
VCE^JV
inn '
J20
240 ^
I
fT villi vr \
160 'f 1
(MHz) 1
80 |
III
100 1000 1 10 200

IC (mA) IC (mA)
2.78.65O0B.0610B
BC200
MINIATURE PNP AF LOW NOISE
SILICON PLANAR EPITAXIAL TRANSISTOR
MECHANICAL OUTLINE
GENERAL DESCRIPTION MT-42
The BC 200 is a PNP silicon planar epitaxial transistor
in miniature plastic package designed for hearing
aids, watches, paging systems and other equipment
where small size is of paramount importance. The
BC 200 is complementary to NPN BC 146.
ALL DIMENSIONS IN mm
Collector-Bats Voltage
20V
'CEO 20V
5V
Emitter-Base Voltage
50mA
Collector Current
TA < 45°C SOmW
Total Power Dissipation at
125°C
Junction Temperature
-66 Cto + 125°C
Storage Temperature Range
THERMAL RESISTANCE
6je 1.6°C/mW
Junction to Ambient
ELECTRICAL CHARACTERISTICS ATTA -25°C

BC200R BC200Y BC200G
PARAMETER SYMBOL MIN TYP MAX MIN TYP MAX MIN TYP MAX UNIT TEST CONDITIONS
100 100 nA -V CB -20V -0

Collector Culoff Cumnt 100 l
E
Collactor Cutoff Currant •'CBO 1 1 1 MA -V CB-20V l
E
-0
Tj-126<>C
Collector-Emitter Knee -VCEK 200 200 200 mV •l

c
-2mA -l
8
-vslue
forwhich -l -2.2mA
Voltage c
and -Vce-IV
Bi Emitter Voltage -Vbe 580 680 580 mV -VcE-CSV -IC-0.2mA
BaM-Emftter Voltage -y
BE 850 650 660 mV Vce-IV -l
c-2mA
O.C. Currant Gain H FE 60 75 105 85 140 200 166 260 400 -VcE-0*V -l
c-0imA
60 100 176 -Vce-IV -l -2mA
D.C. Currant Gain Hfe c
Noiee Figure NF 1.6 1.6 4 1.5 dB -VC E"5V -l-.-0.2mA
R,-2Kn
f-30Hzto16KHz
160 MHz -Vce-SV -l -2mA
Traneliion Fioouoncy f SO 110 c
T
4.5 4.6 4.5 pF -VCB-6V l -0
Collector Capachanea C«b E
f-IMHz
TYPICAL h-PARAMETERS AT -V CE -0.5V, -l c=0.2mA, f°1KHz

PARAMETER SYMBOL BC200R BC200Y BC200G UNIT
Input Impedance "i. 12 15 20
-4
Reverse Voltage Transfer Ratio "re 13 25 40 x10
Small Signal Current Gein h 80 160 270
fe
Output Admittance "oe 13 18 33
BC200
TYPICAL ELECTRICAL CHARACTERISTICS AT TA - 2S°C
DC CURRENT GAIN VERSUS COLLECTOR CURRENT
1 1 II Mil
«f.W.I 1
..
1
111
pu lse te £ t'
1
1
II Hill '
i«
1
z
-- S II
1
N _... s
i
!!
" ~~riTnor~
1 1 [ III sea 10 1,
... -Vrc -3V
§
K IMJIH,
J
E I
l!| BC2 f\ ,
5
j
pulse test j!
I .
i+lfcscaaOR
"^"s
'|l 1
I! II III 1
- COLLECTOR CURRENT IN mA -COLLECTOR CURRENT IN mA
WIDE SAND NOISE FIGURE
5 I 1
l I l i 1
Ij
1
]i
-\
HI \ T- 30 Hz--15KHz
I
1
\A
ill • v
^
I 1
w Z v
^ \ ^-500 n
... 1
j
c
3
IT
RJ-1K
—
1
at
- 5 '
'c z
'i -• E
B-2K
fo-iqjS
III
III I'll
-COLLECTOR CURRENT IN mA •COLLECTOR CURRENT m »A
11.77.0450B
BC286 BC287
COMPLEMENTARY
SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES
CASE T0-59
TBB BC286(HPH) AMD BC287(P1?) ARK COMPLEMENTARY
SILICOH PLANAR EPITAXIAL TRAWSISTORS FOR AF
DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING
APPLICATIONS DP TO 1 AMPERE.
C E B
ABSOLUTE MAXPTOM RATINGS „ „,.«««. >»»«-«. ..-*«. BC286(NPN) BC287(PRP)

Collector-Base Voltage VCBO 70V 60V
Collector-Emitter Voltage VCEO 60V 60V
Emitter-Base Voltage VebO 5V 5V
Collector Current ic 1A
Total Power Dissipation (• TC*25<>C) Ptot 4W
(• TA *25<>C) ,8W
Operating Junction & Storage Temperature Tji Tstg - 55 to 200<>C
BC286(NPN) BC287(PRP)
PARAMETER SYMBOL UNIT TEST CONDITIONS
*IW TY» MAX "IW TYP MAX
Collector-Pass Breakdown Voltage BVcBO 70 V IC-O.lmA lE-0
60 V IC-0.01mA IE-O
Collector-Emitter Breakdown IVCEO * 60 60 V IC-10mA Ib-0
Voltage
Emitter-Base Breakdown Voltage bvebo 5 V iE-O.lmA Ic-O
5 V iEJ-O.OlmA IC-O
Collector Cutoff Current ICBO 20 50 nA VcB-30V lE-0
Collector-Emitter Saturation VCE(sat) > 0.4 1 0.45 1 V IC-1A Ib-O.IA
Voltage
Base-Emitter Voltsge VBE * 0.87 0.9 V IC-500mA VCE-2V
D.C. Current Gain Rfe * 20 180 20 200 lC-500mA VCE-2V
Current Gain-Bandwidth Product fT 150 140 MHz IC-50BA VCE-5V
Collector-Bass Capacitance Cob 11 18 pF Vcb-IOV Ig-0
f-lMHz
• Pulse Test t Pulse Width-0.5»S, Buty Cycle-ljS

BC286 BC287
Ptot V8 ta HFE (NORMALIZED) vs ic

2.0 T A -25°C
llll
"
' PuIbo Test
1 *6
jmm
ft"
pi
p tot
% i l«2
^" fii
NL
(W) k
V *, 0.8
No
p*t Si k w 0.4
|I|
II
II II
50 100 150 200 10 100 1000

IC («A)
*A (°C)
fT TC
VCE( sat) 4 VBE(eat) & ^BE vs IC 250
vs
TA-2!>°C
VcEi-5\>
200 II
150 I I
VOLT
(MHs))
/ "i \
,•
l|
100 \ \
H
1!
,fl ,
'
50
1
10 100 1000 10 100 1000

IC («A) IC (ml)
1.78.8100B.0810B
BC300 BC301 BC302
THE BC300, BC301, BC302 ARE NPN SILICON PLANAR

EPITAXIAL TRANSISTORS RECOMMENDED FOR AF DRIVERS
AND OOTPUTS, AS WELL AS FOR SWITCHING APPLICAT-
IONS UP TO 1 AMPERE. THEY ARE COMPLEMENTARY TO
THE PNP TYPE BC303 AND BC304.
Collector-Base Voltage VcBO

Collector-Emitter Voltage VCEO
Emitter-Base Voltage VEBO
Collector Current 1q
Total Power Dissipation (Tc<25<>c) p tot
(Ta«25°C)
Operating Junction & Storage Temperature Tj, Tstg

PARAMETER SYMBOL MIN TYP MAX raiT TEST CONDTIONS
Collector-Emitter Breakdown Voltage LVCEO * IC=100mA 13-0
BC300 60 V
BC301 60 V
BC302 45 V
Collector-Emitter Breakdown Voltage LVcEV * IC-100mA VEB-1.5V
BC300 only 120 V
BC301 only 90 V
Collector Cutoff Current ICBO 20 nA VCB-60V IE-0
Emitter Cutoff Current IEBO 20 nA VEB-7V Ic-0
Collector-Fmitter Saturation Voltage vCE(sat)» 0.1 0.5 V IC-150mA lB-15mA
Base-Emitter Voltage VBE » 0.78 V IC-150mA VCE-lOV
D.C. Current Gain HpE * 20 IC-O.lmA VCE-lOV
40 240 IC-150mA VCE-lOV
20 IC«=500mA VCE-lOV
D.C. Current Gain Group 4 HpE * 40 80 IC-150mA VCE-lOV
Group 5 70 140
Group 6 120 240
Current Gain-Bandwidth Product fT 120 MHz IC-lOmA VcE-lOV
Collector-Base Capacitance Cob 10 pP VCB-10V Ie-0
f-lMHz
* Poise Test 1 Pulse Width-0.3mS, Duty Cycle-1
;
BC300 BC301 BC302
HPE (NORMALIZED) vs ic
2.0
lllll
TA-25°C
T Pulse Test
1,4
Ptot f
M hip!
(W) im2
i r
o -'
S 0.8 £L '•
u
0.4
'
llllli
0: iiiiii
50 100 150 200 10 100 1000
TA X C (mA)
(°C)
VCE(sat) & VBE(sat) 4: VBE vs IC fT re Ic

l.Or 250i r-
[iiiiii TA-25°C
u
IIIIIII III
VCE-10V
0.8 Ji^ _. III
fT " H H
0.6 TA 1 25°C 150 HI Im
VOLT
*$S?L^
ill
II Pulse Test
tyra„\ .
S
y -JX"I
,
0.4 llllll -jAii

0.2 111'
1
rf'l TO -- .
-i -m
-f---f
.
V CE(sat)
e IC-lQlB*
10 100
II
1000
A 1 1 IIIIIII
10
L It M
100 1000
IC (mA) IC (mA)
1.78.8100B/A
BC303 BC304
CASE TO-39
THE BC303, BC304 ARE PNP SILICON PLANAR EPITAXIAL
TRANSISTORS RECOMMENBED FOR AF DRIVERS & OUTPUTS,
AS WELL A3 FOR SWITCHING! APPLICATIONS UP TO 1
AMPERE. THEY ARE COMPLEMENTARY TO THE NPN TYPE
BC300, BC301, BC302.
C B
E
Collector-Base Voltage -VCBO 85V 60V
Collector-Emitter Voltage -VCEO 60V 45V
Emitter-Base Voltage -Vebo 7V 7V
Collector Current -IC 1A
Total Power Dissipation (Tc<25°c) Ptot 6W
(TA<25°C) 850mW
Operating Junction & Storage Temperature Tji T 8 tg 55 te 175C C
ELECTRICAL CHARACTERISTICS (^-2500 unless otherwise noted)

Collector-Emitter Breakdown Voltage -LVceo * -IC-100mA IB-O
BC303 60 V
BC304 45 V
Collector-Emitter Breakdown Voltage -LVcev -IC-100mA -VEB-1.5V
BC303 only 85 V
Collector Cutoff Current -ICBO 20 nA -VCB-60V Ie-O
Emitter Cutoff Current -IEBO 20 nA -VEB-5V Ic-0
Collector-Emitter Saturation Voltage -v 0.1 0.65 V
CE(sat)» -IC-150mA -lB-15mA
Base-Emitter Voltage -Vbe * 0.78 V -IC-150mA -VCE-10V
B.C. Currant Gain Hyg * 20 -IC-O.lmA -VCE-10V
40 240 -IC-150mA -VCE-10V
20 -IC-500mA -VCE-10V
D.C. Current Gain Group 4 HPE * 40 80 -IC-150mA -VCE-10V
Group 5 70 140
Group 6 120 240
Current Gain-Bandwidth Product ft 100 MHz -IC-lOmA -VCE-10V
Collector-Base Capacitance Cob 17 PF -Vcb-IOV IE-0
f-lMHz
BC303 BC304
Ptot TA HPE (NORMALIZED) vs IC

2.0
T A -25°C
lllll
"TPulse T eat
1 -6 . Iim -VCE..107
IN It
\ .A l-l !
%V^
1,z
i
ii i
Q !'
(w)
& £. 0.8 k
l|'
k^v
*0. 4
Vn i
eat
Sinjf^
N ii
-H mi
50 100 150 200 10 100 1000
Ta IC («A)
(°c)
CE ( aat ) *
1 y, ^("f t) * YBE va I C 250
fT vs *C
1 A-25°C
II
-VrCE •iov
200
HI
150 1 II
!
-VOLT (MHz))
100
50 |
I
||j
1
liiui
10 100 1000 10 100 1000
" IC (mA) - ic (iU)
1.78.0810B/A
BC327 BC328
PNP SILICON AF MEDIUM POWER TRANSISTORS
THE BC327, BC328 ARE PHP SILICON PLANAR CASE TO-92P

EPITAXIAL TRANSISTORS FOR BSE IN AT DRIVER
AND OUTPUT STAGES, AS WELL AS TOR UNIVERSAL
APPLICATIONS. THE BC327, BC328 ARE COM-
PLEMENTARY TO THE NPN TYPE BC337, BC338
RESPECTVELY.

BC327 BC328
Collector-Emitter Voltage (Vbe-o)
-VcES 50V 30V
Collector-Slitter Voltage (Ib-O) -VCEO 45V 25V
Emitter-Base Voltage -VEBO 5V
Collector Current -ic 0.8A
Collector Peak Current (t<10mS) _I CM 1.5A
Total Power Dissipation (© Tc ^25<>C)
Ptot 1.4W
(«Ta<250c) 625mW
Operating Junction & Storage Temperature Tj. T 8tg -55 to 150°C
THERMAL RESISTANCE
Junction to Case
8jc 90©c/V max.
Junction to Ambient e J» 200<>C/W max.
Ptot vs TA HFE vs ic
2.0 250
T A -25°C
u HI -VCS-1V
tt llll f
200
1.5 If ll'l
ill
p tot \y
1.0
w
H
n
FE
150 II IP
(W) II ii
V
S& 100 u 1!
0.5 s^c
50
^ 100
'** i
150 200
50
o-
u
II
n
n
10 100
ii
TA (°c) -IC (mA)

BC327 BC328

BC3?7 BC328
PARAMETER SYMBOL UHIT TEST COHDITIOES
MIN TYP MAX MIH TYP MAX
Collector-Emitter Breakdown Voltage -BVces 50 50 V -IC-0.1«A Vbe-0
Collector-Emitter Breakdown Voltage -LV CB0 # 45 25 V -IC-10mA IB-O
Emitter-Base Breakdown Voltage -BVgBo 5 5 V -lE-0.1mA Ic-O
Collector Cutoff Current -Ices 100 nA -VCES -45V

100 nA -VCES-25V
10 P* -VCES-45V Ta-125°C
10 ^ -VCES-25V T A-125°C
Collector-Emitter Saturation Voltage -cE(sat • 0.7- 0.7 V -IC-500mA -lB-50mA
Base-Emitter Voltage -Vbe » 1.2 1.2 V -lC->00mA -VCE-1V
B.C. Current Gain HpE • 100 650 100 650 -IC-100mA -VCE-1V
Group 16 100 250 100 250
Group 25 160 400 160 400
Group 40 250 650 250 650
All Groups 40 40 -IC-500mA -VCE-1V
Hte Matched Pair Ratio are 1 1.41 1.41 -iC-lOOmA -VCE-1V

n
HFE 2
Current Gain-Bandwidth Product fT 100 100 MHz -IC-10mA -VCE-5V
Collector-Base Capacitance Cob 14 14 pF -VCB-10V Ie-0

f-lMHz
« Pulse Test 1 Pulse Vidth-0.3mS, Duty Cycle-1^
v CE(sat) & ^be lC frp vs Ic

vs
200
T A .25°C
-VCE-5V
160
fT 120 /
AX \ V -
-VOLT .(MHz)
/ \ !
$ !
A |
10 100 1000
"lC (mA) "lC (mA)
1.78.0850A
BC337 BC338
NPN SILICON AF MEDIUM POWER TRANSISTORS
THE BC337t BC338 ARE HP» SILICOH PLAHAR CASE TO-92T

EPITAXIAL TRANSISTORS FOR USB Hf AT
DRIVER AND OUTPUT STAGES, AS WELL AS TOR
UNIVERSAL APPLICATI01IS. THE DC337, BC338
ARE CCMPLEMEHTAHT TO THE MP TYPE BC327,
BC328 RESPECTIVELY.
CEB
ABSOLUTE MAXIMUM RATIHGS
Collector-Emitter Voltage (VBE-O) VCES 50V 30V

Collector-Emitter Voltage (Ib-O) VCEO 45V 25V
Emitter-Baae voltag« VEBO 5V
Collector Current ic 0.8A
Collector Peak Current (t<10ms) lew. 1.5A
Total Power Diaaipation (• TC <25°C) 1.4W
*tot
(• TA <25°C) 625aW
Operating Junction & Storage Temperature Tj, Tatg -55 to 150°C
THERMAL RESISTANCE
Junction to Case «dc 90°C/V max
Junction to Ambient Oja 200°C/V max
P TA HPE vs ic
2.0 t9t TB 250
ill
T A -25<>C
|
fflf VCE-1V
200
1.5 t Pulse Teat
k
p tot HTE 150 1
h
1
*' x
1.0 ** |||
* *Vl'l
00 100
. 0.5 ^0
& 5°
•
\\
n*8lk III
50 100 150 200 10 100
TA (°C) IC (mA)
BC337 BC338
ELECTRICAL CHARACTERISTICS T A-25°C unless otherwise noted)

(
PARAMETER SYMBOL _ BC337

MM TYP MAX
B£558
MIH TYP MAX UNIT TEST CONDITIONS
Collector-Emitter Breakdown Voltage BVcBS 50 30 V IC-O.lnA VBE-0
Collector-Emitter Breakdown Voltage LVCEO * 45 25 V IC-lOaA IB-O
Emitter-Base Breakdown Voltage BVebO 5 5 V IB-0.1^ IC-0
Collector Cutoff Current ices 100 nA VCBS-45V

100 nA VCES-25V
10 VCES-45V TA-125°C
10 VCES-25V TA-125°C
Collector-Emitter Saturation Voltage CE(sat) • 0.7 0.7 V IC-500mA Ib-5C«A
Base-Emitter Voltage 7BE * 1.2 1.2 V IC-300«A VCE-1V
B.C. Current Gain HfE * 100 630 100 630 I C -100«A Vcj-lV
Group 16 100 250 100 250
Group 25 160 400 160 400
Group 40 250 630 250 630
All Groups 40 40 I C -300«A Vce-IV
Hyg Matched Fair Ratio HPE 1 1.41 1.41 IC-100mA VCE-1V

RpE 2
Current Gain-Bandwidth Product fT 100 100 MHz IC-10mA VCE-5V
Collector-Base Capaoitanoe Cob 10 10 PP Vcb-IOV Ie-0

f-lMHs
• Pulse Test 1 Pulse Width«0.3mS, Duty Cycls-lj6
VCE(sat) & VBE vs

fij VS l(j
*C
1.0 200
mill
II"
0.8 160
SB
I* ill
N csJL-- ']M T A-<f5 u
0.6 fT 120 1
r
'III
(MHz)
0.4 III! 80
111
0.2
jM 40 jljl
vCE(sat)
_ rs
IC -JL "IB
1
.,. _v 25°c|
VCE-5V i
o ..ill
100 1000 10 100
Ic (mA) IC (mA)
1.78.83O0A
BC413 BC414 BC415 BC416
COMPLEMENTARY
SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS
CASE T0-92F
THE BC413. BC414. BC415 t BC416 ARE SILICON PLANAR
EPITAXIAL TRANSISTORS FOR AT LOW NOISE PREAMPLIFIER
APPLICATIONS, THE BC413. BC414 ARE NPN AND ARE
COMPLEMEHTART TO THE PHP BC415f BC416 RESPECTIVELY.
BC413 BC414 BC415 BC416

ABSOLUTE MAXIMOM RATINGS ,^ „„*..
fo tag .^ cu (NPN) (NPN) (PNP) (PHP)
Collector-Base Voltage VCBO 45V 50V 45V 50V

Collector-Emitter Voltage VCEO 30V 45V 35V 45V
Emitter-Base Voltage VEBO 5V
Total Power Dissipation 6 Ta^25°C Ptot 300mW
derate 2.4»V*C aeere 25*C
Operating Junction & Storage Temperature Tj, Tste -55 to 150°C

PARAMETER SYMBOL MIN TCP MAX UNIT TEST CONDITIONS
Collector-Base Breakdown Voltage BVCBO IC-IOuA Ie-0
BC413 45 V
BC414 50 V
BC415 45 V
BC416 50 V
Collector-Emitter Breakdown Voltage LVceO IC-10mA (Pulsed)

BC413 30 V IB-O
BC414 45 V
BC415 35 V
BC416 45 V
Emitter-Base Breakdown Voltage BVEBO 5 V U-lOjU Ic-O
Collector Cutoff Current ICBO 15 nA VCB-30V IE-0
5 M VCB-30V
TA-150<>C
IB-O
Emitter Cutoff Current IEBO 15 nA VEB-4V Ic-0
Collector-Emitter Saturation Voltage VCE(sat) 0.08 0.25 V lC-10mA lB-0.5mA

0.25 0.6 V IC-lOOmA. IB-5«A
(Pulsed)
BC413 BC414 BC415 BC416

Collector-Emitter Knee Voltage VCHX 0.3 0.6 V IC-10mA, Ij-value at
which ic-llmA VCE-1V
Base-Emitter Saturation Voltage 7BE(sat) 0.92 V IC-100mA lB-5mA(Pulsed)

Base-Emitter Voltage VBE O.55 O.64 0.75 V IC-2mA VCE-5V
0.57 V IC-O.lmA VQE-5V
Current Gain-Bandwidth Product fT 200 MHz IC-10mA Vce-5V
Collector-Base Capacitance Cob VCB-10V I E -0
BC413, BC414 2.7 PF f-lMHz
BC415, BC416 3.2 PF
BC4U, BC414 1.2 2.5 dB Rg-2K«- f-30Hz-15KHz
BC415, BC416 1.2 2.0 dB
Flicker Noise Voltage Referred to En IC-0.2mA VCE-5V

Base BC4U, BC4H 0.135 îV RG-2KA f-10Hz-50Hz
BC415, BC416 0.11
D.C. CURRENT GAIN (HpE) AT VCE-5V Ta-25°C

BC415, BC416 BC413, BC414, BC415, BC416 BC413, BC414, BC415, BC416
e ic "FE GROUP A HFE GROUP B HFE GROUP C
0.01mA 40 100 100 170 100 290
2mA 120 170 220 180 500 46O 380 520 800
100mA 100 160 270
h - PARAMETERS AT IC-2mA ?CE=5V f -1kHz Ta-25°C

Hfe group a HFE GROUP B HFE GROUP C
h - PARAMETER SYMBOL
min typ max MIN TYP MAX MIN TYP UNIT
MAX
Input Impedance hie 1.6 2.7 4.5 3.2 4.5 8.5 6 8.7 15 KA
Voltage Feedback Ratio hre 1.5 2 3 xlO"4
Output Admittance hoe 18 30 30 60 60 110 F
BC413 BC414 BC415 BC416
FLICKER MPISB MSA3UREMSWT
Tmh»r««>rl« MvMta h#"(* AFV*»Volw««
90HI 1 II
\ 1 ) ll|
if I
&S^ r
FMCback iVu'mmU
C3 p 1
11 • 10 100 Ik 10
TYPICAL CHARACTERISTICS AT Ta-25°C (Pulse Test)
V BE AND v CE(»t)
D.C CURRENT GAIN
-
T 1
1
II
HFE
1 i
1
'
1
V° fe
HI
" SV
(V)
1.2
Ifjj J
j
1
1.0 1
.v BE I
i
ill "I as
1
V CE -5V Tj
1
-*
iffl GROTJL B i 1
0.6
Î.'IL "f
n\\\ 1 TTiTil!
i
200 GROUP 0.4 j
v CE(s«t)
[111 :
I
1
1 If 'if 0.2 I/—50 l„ - i'
III 1 il >
il Hh++tt
1 10
ICfrnA) l
C (mA)
BC413 BC414 BC415 BC416

'c
|
t 1
<mA) 6mA (MHz) ll
I
300 \
'CE- iV
4tiA
— I
3uA- 200
ZmA
1
\
0.5
'B=1
i
WA
i
1
12 V CE (V)
3 4
J^
C <mA)
10
COLLECTOR CUTOFF CURRENT EQUIVALENT NOISE VOLTAGE AT BASE

200
En t 1 1Mllll
/y
100 iiiiii V CE -6V
(pV)
R G -10Kri F-10-SOHz
CBO »
|ILU< M *
(nA)
R G -5K a
==
,
10 T" R G -2RS
VCB -30V
'l
:-0
Ti RC
1
I Hi
0.1 100 1000
80 120 l
C 0<A)
TA <°C)

Cob
V CE -6V "'1
IpFI V III
II
C Hit
MB) 1 1 1 1
Rq-600IA
fi
v\ E*°
MMHz
3
V^
4
^ b- ^. R G-IKfl
- Rq-
«
7
Rq-WV
R G "" MCA
'
ill
100 1000
4 6
l
C (PA)
V CB (V)
2.78. 4500B. 0450B

BC431 BC432
COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS
THE BC431 (NPN) AND BC432 (PNP) ARE CASE TO-92F

COMPLEMENTARY SILICON PLANAR EPITAXIAL
TRANSISTORS FOR USE IN AF DRIVER AND
OUTPUT STAGES, AS WELL AS FOR UNIVERSAL
APPLICATIONS.
CSB
ABSOLUTE MAXIMUM RATINGS For „fld„ ».

k votag .^ cu_tv. „„ nwlw,
lu
Collector-Emitter Voltage (Vbe-O) Vces 70V

Collector-Emitter Voltage (13*0) vCEO 60V
Collector Current "*
ic 0.8A
Collector Peak Current (t$10mS) ICM 1.5A
Total Power Dissipation (© Tp $ 25°C) Ptot 1.4V
A <25 C)
1'
(« 625ibW
Operating Junction & Storage Temperature T T 8tg -55 to 150°C

J'
THERMAL RESISTANCE
Junction to Case Ojc 90OC/V max.
Junction to Ambient °ja 200°C/V max.
Ptot ITS TA HyE vs ic

2.0 200
II
Â-25°C
|||
1
VCE-1V
160 >uls e '1
est
1.5 r i III
r « "I TTT 1
p tot >2 120
(W)
1.0 kV& HFE
80
I |
\&
0.5 S#
50
^
b.
ft
100
K
150 200
40
10
ill
100
|
II
1000
TA (°C) IC (mA)
BC431 BC432
ELBCTRICAL CHARACTERISTICS (Ta-25°C unless otherwise noted)

Collector-Emitter Breakdown Voltage BVcES 70 V IC-O.laA Vbe-0
Collector-Emitter Breakdown Voltage LVcbo * 60 V IC-10mA IB-O
Emitter-Base Breakdown Voltage BVgBO 5 V lC-0.1mA IC-0
Collector Cutoff Current ices 100 nA VCES-60V

10 VC ES-60V Ta-125°C
Collector-Emitter Saturation Voltage CE(sat)* 0.7 V IC-500mA IB-50BA
Base-Emitter Voltage TBB • 1.2 V IC-300mA VCE-1V
D.C. Current Gain H?E • 63 250 IC-100BA VCE-1V

Group 10 63 160
Group 16 100 250
All Groups 40 I c -300mA Vce-IV
HyE Matched Pair Ratio htei . 1.41 IC-100nA VCE-1V

HFE 2
Current Gain-Bandwidth Product fT 100 MHs IC-lOnA VCE-5V
Collector-Base Capacitance BC431 C b 12 PF Vcb-IOV Ib-0

BC432 17 PP f-lMHs
* Pulse Test t Pulse Width-0.3mS, Duty Cycle-ljf
VCE(sat) & VBE V8 ic fT vs Ic

1 200
TA-25°C
mill mil CE-5V
J
111
iiiiiii
n a 160
— <
„ TO
rjcap* IP
II
1
fT 4i N^
VOLT 0.6 120
n
Ta-2; °c
Puis* T est (MHz) /
/\ Mill 1 II 80 ,
,,
>
1
n ? Jfl 40
vc E(sat)
ic-ioi B L
-fflir
*\ ffl
10 100 1000 100

IC (mA) IC («A)
1.78.8100B.0810B
BC440 BC441 BC460 BC461
COMPLEMENTARY
CASE TO-39
THE BC440, BC441, BC460, BC461 ARE SILICON PLANAR
EPITAXIAL TRANSISTORS FOR AT DRIVERS AND OUTPUTS,
AS WELL AS FOR SWITCHING APPLICATIONS UP TO 1
AMPERE. THE BC440, BC441 ARE NPN AND ARE COMPLE-
MENTARY TO THE PNP BC460, BC461 RESPECTIVELY.
BC440(NPN) BC441(NPN)
ABSOLUTE MAXIMUM RATINGS f«i>".««»."«<i'«c«».rt.„«.-*,,-. BC460(FNP) BC46l(PNP)
Collector-Emitter Voltage (RBE<100n-) VCER SOV 75V
Collector-Emitter Voltage (Ib-O) VCEO 40V 60V
Quitter-Base Voltage VEBO 5V 5V
Collector Current IC 1A
Collector Peak Current ICM 2A
Total Power Dissipation (TcC25°C ,VCE *10V) p tot 10W
(Ta<25©C) 1W
Operating Junction & Storage Temperature T j» T stg -55 to 200°C
KLBCTRICAL CHARACTERISTICS (Ta-25<>C unless otherwise noted)

BC440 BC441
PARAMETER SYMBOL BC460 BC461 UNIT TEST CONDITIONS
MIN MAX MIN MAX
Collector-Emitter Breakdown IVceo « 40. 60 V IC-100mA IB-O
Voltage
Emitter-Base Breakdown Voltage BVEBO 5 5 V iE-O.lmA Ic-0
Collector Cutoff Current ICB0 100 100 nA VCB-40V IE-O
Collector Cutoff Current I CER 10 VCE-50V RBE-100fl
10 pA VCE-70V RBE-lOOfl
Collector-Emitter Saturation VcE(sat)* 1 1 V IC-1A IB=0.1A
Voltage
Base-Emitter Saturation Voltage VBE(sat)« 1.5 1.5 V IC-1A IB-0.1A
D.C. Current Gain HFE * 40 250 40 250 V lC«500mA VCE-4V
Group 4 40 70 40 70
Group 5 60 130 60 130
Group 6 115 250 115 250
20 IC-1A VCE-2V
Current Gain-Bandwidth Product fT 50 50 MHz IC-50mA VCE*4V
Collector-Base Capacitance Cob 25 25 PP VCB-10V IE-0
f-lMHz
• Pulse Test : Pulse Width-0.5mS , Duty Cycle .If
BC440 BC441 BC460 BC461
Ptot vs TA H?E (NORMALIZED) va Ic

16 2.0
jllll
T A -25°C
"
jPuls o Teat
12 It
N
M
'iiiiii
H
^ §
o
im2
1
— 1
J 111
(V)
fe 5. 0.8 1 II
II
%J.
^Sl'
I
w
0.4 II I II
lllji
L*o .
He*it S1"l- ^ II
J
I
miii
50 100 150 200 10 100
TA (°C) IC (mA)
VCE(sat) & VBE(aat) & ^BE vs I C l

T vs 1C
250
1
IIIIII
*A- 25°C
111
VC E-4V
0.8 200
VSE
e
p„\0XX III
T A=2 5°C III
0.6 150 |
"]]] uls e ! 'est

Arcs- *:
l||
VOLT $ (MHz))
•
0.4 100
1
0.2 IIIIII
30 |||
VcE(aat)
IC-10IB
— £r
10 100 1000 10 100 1000
IC (mA) *C (mA)
1.78.B100A/B.0810A/B
BC527 BC528
THE BC527t BC528 ARE PHP SILICON PLANAR CASE TO-92A

EPITAXIAL TRANSISTORS TOR USI IN AF DRIVER
AND OUTPUT STAGES, AS WELL AS TOR UNIVERSAL
APPLICATIONS. THE BC527. BC528 ARE COM-
PLEMENTARY TO THE NPN TYPE BC537, BC538
RESPECTIVELT.

Collector-Base Voltage "v 60V 80V
CBO
Collector-Emitter Voltage -VcbO 60V 80V
Emitter-Base Voltage -VgBO 6V
Collector Peak Current (t* lOmS) -ICM 1.5A
Total Power Dissipation (• Tc <25<>c) Ptot 1.5W
(• TA<25°C> 625mW
Operating Junction & Storage Temperature tj, Tstg -55 to 150°C
THERMAL RESISTANCE
Junction to Case 83OC/W
Junction to Ambient 200°C/W
°0a
2.0
Ptot a TA HPE vs Ic
160
II
1.5 LUIUjL
»jl!;j
p tot
-^CB-1 w
1
(V)
80 II
0.5 S?c>»*— % Ift'

1
fU
TV ^ 1 40
;tji-j»5°C . 'II
p»ii<te Test
n n 1
50 100 150 200 10 100 1000

TA (°C) "Ic (mA)
BC527 BC528

BC527 BC528
PARAMETER SYMBOL UHIT TEST C0RDITI01IS
Mnr max Mil! MAX
Collector-Base Breakdown -BVcBO 60 80 V -IC-O.lmA IK-0

Voltage
Collector-Emitter Breakdown -LVcbo • 60 80 V -IC-lOmA IB-O

Voltage
Emitter-Base Breakdown Voltage -BVebO 6 6 V -Ig^.OlmA Ic-0
Collector Cutoff Current -ICBO 100 nA -VCB-40V IB-0

100 nA -VCB-60V Ie-0
Emitter Cutoff Current -IEBO 100 100 nA -VEB-4V IC-0
Collector-Emitter Saturation -VCE(sat)« 0.7 0.7 V -IC-50CmA -lB-50mA

Voltage 1.2 1.5 V -IC-1A -Ib-O.IA
Base-Emitter Saturation Voltage - vBE(sat)« 1.3 1.3 V -IC-15CaA -IB-15**
B.C. Current Gain RPE • 40 400 40 400 -IC-100mA -VCE-1V

Group 6 40 100 40 100
Group 10 63 160 63 160
Group 16 100 250 100 250
Group 25 160 400 160 400
All Groups Era • 50 50 -I C -1C«A -VCB-10V

50 50 -IC-15C«A -VCB-10Y
50 50 -IC-50C«A -Vd-lOV
15 15 -IC-1A -V0E-1OV
Current Gain-Bandwidth Product fT 100 100 MHl -IC-5C«A -VCB-10T
Collector-Base Capacitanoe Cob 15 15 PP -VcB-lOV Ij-0

f-lMH«
• Pulse Test t Pulse Width-0.3«S, Duty Cycle 1*
r IC
VCE(sat) A VBE(sat) ts I C T vs
250
TA-25°C
iiiiii 4\ -VCE -10V
0.8 llll 200
ii ii'
.Jlfp*-125°C
IC •lOlB 1!
VI s 9£rtffl
Ill
fT 1
0.6 .llpulse Test 150 I
''
-VOLT (MHs) u V- M :
\\
i
0.4 100 / |
"•"TT
1!
1 I
0.2 50 'fl
IIIIII
«c E sat)
II
1 10 100 10 100 1
- IC (mA) - IC (mA)
1.78.0810B
BC537 BC538
THE BC557, BC538 ARE HPH SILICON PLANAR CASE TO-92A

EPITAXIAL TRANSISTORS FOR USE IN AP DRIVER
AMD OUTPUT STAGES, AS WELL AS TOR UNIVERSAL
PLEMENTARY TO THE PHP TYPE BC527, BC528
RESPECTIVELY.
EBC
ABSOLUTE MAXIMUM RATINGS BC537 BC5J8

Collector-Base Voltage VCBO 60V eov
Collector-Emitter Voltage VCBO 60V eov
Eaitter-Base Voltage VgBO 6V
Collector Peak Current (t<10ns) ICM 1.5 A
Total Power Dissipation (0 Tc<25°C) 1.5W
*tot
(• Ta<25<>C) $25mW
Operating Junction & Storage Temperature Tj, Tstg -55 to 150°C
THERMAL RESISTANCE
Junction to Case w jc 83°C/V max.
Junction to Ambient 200°C/V max.
B vs
]
tot vs ' A HpE IC
2.0
|
T A-25°C!
III
nil
Pulse Test
HI
1.5 IP •ft-"
1
Cfl
*"tot
1.0
N% «-„
HpE 120 ?cfif-
j n
(W)
80
\%
0.5 N?
50
^
9 fr
100
i
150 200
40
H
n
1
100
il
1000
Ta (°c) IC (mA)
BC537 BC538
T A-25°C unless otherwise noted)
BC537 BC558
PSRAMETER SYMBOL UNIT TEST CONDITIONS
MIN MAX MIN MAX
Collector-Base Breakdown BVCBO 60 80 V IC-O.lmA Ie-0

Voltage
Collector-Emitter Breakdown 60 80 V IC-lOmA IB-0

LVceO *
Voltage
Emitter-Base Breakdown Voltage BVebO 6 6 V lE>O.01mA Ic-0
Collector Cutoff Current x CB0 100 nA VCB-40V Ie-0

100 nA yCB-60V Ie-0
Emitter Cutoff Current lEBO 100 100 nA Veb-4V IC-0
Collector-Emitter Saturation VcE(sat)* 0.7 0.7 V IC-500mA lB-50mA

Voltage 1.2 1.5 V IC-IA IB-0.1A
Base-Emitter Saturation VBE(sat)* 1.5 1.5 V IC-150mA lB-15mA

Voltage
D.C. Current Gain HyE * 40 400 40 400 IC-100mA Vce-IV

Group 6 40 100 40 100
Group 10 65 160 65 160
Group 16 100 250 100 250
Group 25 160 400 160 400
All Groups HpE * 50 50 I c -10mA VCE-lOV

50 50 IC-l50mA VCE-lOY
50 50 IC-500mA Vce-IOV
15 15 IC-IA Vce-IOV
Current Gain-Bandwidth Product f T 100 10© MHz IC-50mA VCE-IOV
Collector-Base Capacitance Cob 15 15 PF VCB -10V Ie-0

f-lMHz
* Pulse Test j Pulse Width=0.3mS, Duty Cycle 1*
fij vs Ic
VcE(sat) & VBE(sat) vs Ic
1.0 250
Lm T A .2 5 b c
|j mil
0.8 Hill | \ y IP 200

VCE-lOV
lllil '
t\
'
ill!
N B* 25°C
+*tfl1 T c- ioIb
0.6 III
Pulse Test
fT 150
Ls \
MW
VOLT (MHz) ^S
100
0.4 jjU
tffl
III V
t II
0.2
II
t|
^s
A 50
lljl
_v_:e sat)
10 100 1000 10 100

X C (mA) IC (mA)
1.78.8100B
BC546 through BC550
THE BC546 THROUGH BC550 ARE NPH SILICON PLANAR CASE TO-92F
EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL
AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS.
THEY ARE COMPLEMENTARY TO BC556 THROUGH BC560.
THE BC549, BC550 ARE CHARACTERIZED BY LOW NOISE

FIGURE.
CEB
ABSOLUTE MAXIMUM RATINGS BC546 BC547 BC546 BC549 BC550
Collector-Base Voltage yCB0 80V 50V 30V 30V 50V
Collector-Emitter Voltage (VBE-O) 80V
Vces 50V 30V 30V 50V
Collector-Emitter Voltage (iB-O) 65V
Vceo 45V 30V 30V 45V
Emitter-Base Voltage VggQ 6V 6V 5V 5V 5V
Collector Current IC 100mA
Collector Peak Current IqM 200mA
Total Power Dissipation (Ta<25°C) P tot 500mW
derate 4mW/°C above 250c
Operating Junction & Storage Temperature Tj, T
s tg -55 to 150°C
ELECTRICAL CHARACTERISTICS (TA-25°C unless otherwise noted)'
PARAMETER SYMBOL MIN TYP MAX UNIT test- cowman

Collector-Base Breakdown Voltage BVCB0 IC-lOuA IE-O
BC546 80 V
BC547 50 V
BC548 30 V
BC549 30 V
BC550 50 V
Collector-Emitter Breakdown Voltage BVcEB IC-lOuA VBB-0
BC546 80 v
BC547 50 V
BC548 30 V
BC549 30 V
BC550 50 V
Collector-Emitter Breakdown Voltage LVCEO IC-2mA(Pulse*)
BC546 65 V IB-O
BC547 45 V
BC548 30 V
BC549 30 V
BC550 45 V
BC546 through BC550
PARAMETER SYMBOL MIN TYP MAX TJNIT TEST CONDITIONS
Quitter-Base Breakdown Voltage BVEBO iE-luA Ic-0

BC546.547 6 V
BC548.549.550 5 V
Collector Cutoff Current ICBO 15 nA VRB-30V Ie-0
b ^ VCB-30V IE-0
Ta-150°C
Collector-Emitter Saturation Voltage VCE(sat) 0.07 0.25 V IC-lOmA lB-0.5mA
0.22 0.6 V IC-100mA lB-5mA(Pulsed)
Collector-Emitter Knee Voltage VCEK 0.3 0.6 V IC-10mA, IB-value at
which Ic-llmA VCE-1V
Base-finitter Saturation Voltage VBE(sat) 0.7 V IC-lOmA lB-0.5mA
0.9 V IC-100mA lB-5mA( Pulsed)
Base-Emitter Voltage VBE 0.58 0.65 0.7 V IC«2ntA VCE-5V
0.68 0.77 V IC-10mA VCE-5V ,
Current Gain-Bandwidth Product fT

250 MHz IC-10mA VCE-5V
Collector-Base Capacitanbe Cob 2.7 4.5 pF VCB-10V IE-0 f-lMHa
BC546,547,54S 2 10 dB RG-2KA f-lkHz
BC549.550 1.4 4 dB Af-200Hz
BC549 only 1.2 A « RG-2Ka f-30Hz-15kHz
BC550 only 1.2 3 dB
Flicker Noise Voltage Referred toBase 5T IC"0.2mA VCE-5V
BC549.550 only 0.135 nV RG-2KO. f-10Hz-50Hz
FLICKER NOISE MEASUREMENT
Tramhtor undtr MM Amplifier hnd*Ml »> Af V.tat VoNflMNf
Ffadbacfc lVg"«*iwJ
C=3
BC546 through BC550
D.C. CURRENT GAIN (HpR) AT VCB-5V TA-25°C

BC546, BC547 BC546, BC547
BC548 BC548 BC548
© ic BC549, BC550 BC549, BC550
Hpg GHOUP A hje GROUP B BPB GROUP C
MIN TYP MAX KIN TIP MAX MIN TYP MAX
0.01mA 90 170 290
2mA 110 170 220 200 500 450 420 520 800
100mA 100 160 270
h - PARAMETERS AT lQ2mA YCE-5V f-lkH« *A-25°C
h - PARAMETER HFE GROUP A hfe group b HFE GROUP C

SYMBOI, UNIT
MIN TYP MAX min typ max MIN TYP MAX
Input Impedance hie 1.6 2.7 4.5 3.2 4.5 8.5 6 8.7 15 Kn.
Voltage Feedback Ratio h re -4
1.5 2 3 xlO
Output Admittance hoe 18 30 30 60 60 110 pxj
TYPICAL CHARACTERISTICS AT TA-25 C (Pulee Teat)
D.C CURRENT GAIN V BE AND v CE(sat)

i/S COLLECTOR CURRENT VS COLLECTOR CURRENT
""
II
jl II
hfe 1
1
VCE-5>/ I
1
Igrou* C >
'"J
VB E
1
Mi 1
{Li-- •4
1
k'CE-BV
i II ll
G KGO {
H"ffT 1
!i
1
— "-.
1
200
V« (Ml)
it
1 1 • 1
C-30 l
B
TM
III III 111 III l-i-H+tl
1 10
<C <mA) lc(mA)
BC546 through BC550
TYPICAL CHARACTERISTICS (TA =25«>C UNLESS OTHERWISE SPECIFIED)

'C *r
(mA) b HA
\
'CE= 5V
I
1.5
i
{
4uA
">
N k
uA- 200
\
2mA
. 100
'B=1jjA
12 I
V CE (V)
3 4 1
l
C (mA)
10
I
COLLECTOR CUTOFF CURRENT h-PARAMETERS (NORMALIZE 3)

200
100
CBO V CE -5>/
h|
InA) he (N) \
B f=1KHz
10
= I
j
i
V CB -30V
l
E -0
h re
1.0 - h fe
"n* ^^
0.1
0.2
1
'A (°C)
l
c (mA)
EQUIVALENT NOISE VOLTAGE AT BASE BROAD BAND NOISE FIGURE

V CE -6V "1
Hz*
MB) RG - 500 n.
3
R 3" K«
Rff
«<j-6K<£
'Ctet?
"
* G -1()KA I3C?>50
100 1000
100 1000
l
C (PA>
i
c (*<*>
2.78.430OB/45O0B
BC556 through BC560
PNP SILICON AF SMALL SIGNAL TRANSISTORS
CASE TO-92F
THE BC556 THROUGH BC560 ABE PNP SILICON PLANAR
EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL
AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS.
THEY ARE COMPLEMENTARY TO BC546 THROUGH BC550.
THE BC559, BC560 ARE CHARACTERIZED BY LOW NOISE

FIGURE.
ABSOLUTE MAXIMUM RATINGS BC556 BC557 BC558 BC559 BC560
Collector-Base Voltage -VCBO 80V 50V 30V 30V 50V

Collector-Emitter Voltage (Vje-O) -VCES 80V 50V 30V 30V 50V
Collector-Emitter Voltage (Ib=0) -VCEO 65V 45V 30V 30V 45V
Emitter-Base Voltage -Vebo 5V
Collector Current -ic 100mA
Collector Peak Current -ICM 200mA
Total Power Dissipation (Ta<:25 C) Ptot 500mW
derate tmW/oc above 25°C
Operating Junction & Storage T perature Tj, T 8 tg -55 to 150OC

Collector-Base Breakdown Voltage -BVCBO -IC-10uA Ib-0
BC556 80 V
BC557 50 V
BC558 30 V
BC559 30 V
BC560 50 V
Collector-Emitter Breakdown Voltage -BVces -I C -10uA VbE-0
BC556 80 V
BC557 50 V
BC556 30 V
BC559 30 V
BC560 50 V
Collector-Emitter Breakdown Voltage -LVCE0 -IC-2mA( Pulsed)
BC556 65 V lB-0
BC557 45 V
BC558 30 V
BC559 30 V
BC560 45 V
—
BC556 through BC560
D.C. CURRENT GAIN (HPE) AT -VCE-5V TA-25°C

BC556, BC557 BC556, BC557 BC556, BC557
BC558 BC558 BC558 BC558
« -ic BC559, BC560 BC559. BC560 BC559. BC560
HpE GROUP 71 HPE GROUP A HPE GROUP B aFE GROUP c
MIN TYP MIN ran TIP MM MIN TYP MAX MIR TYP MAX
0.01mA 70 110 200 350

2mA 70 110 140 110 170 220 200 300 450 420 520 800
100mA 60 80 140 240
h - PARAMETERS AT -IC-2mA -^CE-57 f-lKHz Ta-25°C

h
HPE GROUP VI HPE GROUP A HPE GROUP B HPE GROUP C
- PARAMETER SYMBOL WHIT
MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
Input Impedance hie 1.4 2.7 4-5 8.7 Kfl
Voltage Feedback Ratio 4

h re 2.5 3 3-5 4 xi5
Small Signal Current Gain hfe 75 HO 150 125 190 260 240 330 500 450 580 900
Output Admittance hoe 20 25 35 60

r
TYPICAL CHARACTERISTICS AT TA-25°C (Pulse Test).

V BE AND v CE($at)
CURRENT GAIN
D.C.
—— -
Hi i!!I llll!
I
Ij l-V) II
hfe
600
T |j
i
-v (:e- 5V
'ji
1.2
tit ,1
fl I
> c JL 1
1.0
v BE
|.
£?
i,A j
1
1 0.8 - 4- -
#-V CE »5V
"
"til 1
1
i GRO np B I
11 0.6
mi
i
TiTii Ii y
sM 0.4 |
GRO^ A
~" vc i(sat)
JiJ—
inn! II
1 0.2
GROUP VI
III ii nun i 1
H-f+tt |
-l c (mA) -l C (mA)
BC556 through BC560
PARAMETER SYMBOL MIN TYP MAX ONIT TEST; CONDITIONS

Emitter-Base Breakdown Voltage -BVebo 5 V -iE-luA Ic-0
Collector Cutoff Current -ICBO 15 nA -VCB-30V lE-0

5 pA -VCB-30V Ie-0 TA-150°C
Collector-Emitter Saturation Voltage -VCE(sat) 0.1 0.3 V -IC«10mA -lB-0.5mA

0.25 0.65 V -iC-lOOmA -lB-5mA(Pulsed;
Collector-Emitter Knee Voltage -VCEK 0.3 0.6 V -IC-10mA, lB»value at

which -IC-llmA -VCE-1V
Base-Emitter Saturation Voltage -VBE(sat) 0.72 V -IC-10mA -lK-0.5mA

0.92 V -IC-lOOmA -lB-5mA(Pulsed]
Base-Emitter Voltage -VBE 0.6 0.65 0.75 V -lC-2mA -VCE-5V

0.7 0.82 V -IC-lOmA -VCE-5V
Current Gain-Bandwidth Product fT ,180 MHz -IC-10mA -VCE-5V
Collector-Base Capacitance Cod 3.2 PP -VCB-10V Ie-0 f-lMHa
Noise Figure NF -IC-0.2mA -VCE-5V

BC556.557.558 2 10 dB RG-2Kft f-lkHz
BC559.560 1.2 4 dB *f-200H*
Noise Figure NF -IC-0.2mA -VCB-5V

BC559 only 1.2 4 dB RG-2K«. f-30Hz-15KHz
BC560 only 1.2 2 dB
Flicker Noise Voltage Referred to

B*8 *
K -IC-0.2mA -VCE-5V
BC559.560 only 0.11
P RG-2Ka f-10-50Hz
FLICKER NOISE MEASUREMENT
AnvMtar UntTm Htm Kf Viht
/-} a. HHi lOHt nib IIOHt

1
\m i
„R ufirv
m
IrKlii
1 10 100 111 10 hi
BC556 through BC560

-'c 6flA <T 1
(MHz)
ImA)
5)iA — 'CE" iV
4)iA
1.0 200
3)iJ
2)iA
100
^~
|
-Ij-ljU-
12 "V
CE (V)
3
I
4
I J
COLLECTOR CUTOFF CURRENT

VS AMBIENT TEMPERATURE
200
100
-•CBO
InA)
he(N)
^ce -30V
l:-0
=
l
0.1
40 80 120 160
TA (°C)
EQUIVALENT NOISE VOLTAGE AT BASE BROAD BAND NOISE FIGURE

II
I-VCE-5V 1
I
If If
(—15
IdB] it
1 l
G -600A
3 ML,
— 1
Rr~
, "G"
Zfc Mill
ft t 3559
-10 KA B C560
-*jl R G
100 1000 100 1000
-l C (PA)
2.78.04 30B/04 503

BC727 BC728
THE BC727, BC728 ARE PHP SILICON PLANAR CASE TO-92A

EPITAXIAL TRANSISTORS FOR TOE IN AF DRIVER
AND OUTPUT STAGES, AS WELL AS FOR UNIVERSAL
COMPLEMEHTARY TO THE NPN TYPE BC737, BC738
RESPECTIVELT.
EBC
ABSOLUTE MAXIMDM RATINGS BC727 BC728

Collector-Base Voltage vCBO
"
50V JOV
ceo 40V ??V
Qnitter-Base Voltage vebo 5V
Collector Current •ic 1.5A
Collector Peak Current (t4l0mS) ICM 2.5A
Total Power Dissipation (« Tc^25°C) 1.5V
Ptot
(eTA 425°C) 625mW
Operating Junction & Stoarage Temperature *0» *stg -55 to 150<>C
THERMAL RESISTANCE
Junction to Case edc 83°C/V max
Junction to Ambient 8 Ja 200°C/W max
P t0t ta
1 re HFE
2.0 250
va Ic
1
'
'i
^
lllflll
i
200 mill
1.5
' J !;..|j
\%*- Sm
s&
w X'i
'
150
Hfe
(v)
1.0 X* ^r? r
'Sk. \
100 Hi
H
^
i
0.5 *£> &

tffl !
* 50 II
Jl TA-5»5°C T
III
Pull le Te Bt
J III
50 100 150 200 10 100 1000
T A (°C)
- J C (mA)
BC727 BC728
ELECTRICAL CHARACTERISTICS (^k^^C unless otherwise noted)

BC727 BC728
PARAMETER SYMBOL OBIT TEST CONDITIONS
MIH TTPMAX MIN TYP MAX
Collector-Base Breakdown Voltage -BVC B0 50 30 V -IC-O.lnA lE-0
Collector-Emitter Breakdown -LVCB0 • 40 25 V -IC-10nA Ib-0

Voltage
Enitter-Base Breakdown Voltage -BVKBO 5 5 V -Ig-O.laA Ic-0
Collector Cutoff Current -ICBO 100 nA -VCB-40V Ig-0

100 nA -VCB-25V IB-0
Emitter Cutoff Current -IEBO 100 100 nA -Veb-4V Ic-0
Collector-Quitter Saturation -CE(sat] • 0.7 0.7 V -I C -500mA -Ib-50^

Voltage
Base-Emitter Saturation Voltage -VBE(sat; • 1.2 1.2 V -IC-500mA -IB-50«A

1.3 1.3 V -IC-1A -Ib-O.IA
B.C. Current Gain HTE » 63 630 63 630 -IC-lOOnA -Vce-IV

Group 10 63 160 63 160
Group 16 100 250 100 250
Group 25 160 400 160 400
GroAp 40 250 630 250 650
All Groups Hyg * 63 63 -IC-500mA -VCE-1V

15 50 -IC-1A -VCE-1V
Current Gain-Bandwidth Product fT 40 120 40 120 MHz -IC-50BA -VCE-10V
Collector-Base Capacitance Cob 17 20 17 20 pF -VCB-10V lE-0

f-lMHz
fT vs IC
CE(sat) & TBE(sat) vs IC
250 TA-25°C
HI -VCE-IOV
200
f
T 150
1 1
(MHz) iiM j
100 ... —
'
* "1
/ 1
M
50 In! \
Hill
lllll 111
100 1000 10 100 1000

"IC (mA) IC (1 nA)
1.78.0810A
BC737 BC738
THE BC737, BC738 ARE HPH SILICON PLANAR CASE T0-92A

EPITAXIAL TRANSISTORS TOR USE IN AF DRIVER
AMD OUTPUT STAGES, AS WELL AS TOR UNIVERSAL
APPLICATIONS. THE BC737. BC738 ARE COM-
9
PLEMENTARY TO THE PHP TYPE BC727. BC728
RESPECTIVELY.
EBC

Collector-Base Voltage CBO 50V 3OV
Collector-Eaitter Voltage VcBO 40V 25V
Emitter-Base Voltage ebo 5V
Collector Peak Current (t £lOmS) *CM 2.5A
Total Power Dissipation (• Tc425°C) Ptot 1.5W
(• TA 425°C) 625«W
Operating Junction & Storage Temperature Tjt Tstg -55 to 1500c
THERMAL RESISTANCE
Junction to Case «jc 83°C/W max
Junction to Ambient Oja 200<>C/tf max
Pt0t V8 *a HF!; va ic
250
Ijjlll *A-a5°c
Ill'l
Ttj] 1US< Tea'
II
1 1 '
ll
200
\
llll
,««iofl
Ptot "
fc»- HPE150 "CS
(W)
1.0 s
^X»
VCB"
iVJl
1
1^ 100
*gc
x*
0.5
f 50
ii
°. \
1 10 100 1000
TA (°C) IC (">A)
BC737 BC738
ELECTRICAL CHARACTERISTICS (Â-25°C unless otherwise noted
BC737 BC738
MIN TTPMAX MIN TIP MAX
Collector-Base Breakdown Voltage BVCB0 50 30 V IC-O.lmA lE-0
Collector-Emitter Breakdown I^CEO * 40 25 V IC-10mA IB-O

Voltage
Unit tor-Base Breakdown Voltage BVhbO 5 5 V lE-0.1mA Ic-0
Collector Cutoff Current ICBO 100 nA VCB-40V Ie-0

100 nA VCB-25V lE-0
Emitter Cfetoff Current lEBO 100 100 nA VEB-4V Ic-0
Collector-Emitter Saturation VcE(sat) • 0.7 0.7 V IC-500mA lB-50mA

Voltage
Base-Emitter Saturation Voltage VBE(sat) * 1.2 1.2 V IC-500mA lB-50mA

1.3 1.3 V IC-1A Ib-O.IA
S.C. Current Gain HpE * 63 65O 65 650 IC-lOOmA VcE-lV

Group 10 65 160 65 160
Group 16 100 250 100 250
Group 25 160 400 160 400
Group 40 250 650 250 650
All Groups HpE * 63 IC-500mA VCE-1V

15 s IC-1A Vce-IV
Current Gain-Bandwidth Product fT 40 150 40 150 MHa I c -50mA VcE-lOV
Collector-Base Capacitance Cob 12 20 12 20 PP TCB-IOV IE-0

f-lMHz
Pulse Test 1 Pulse Wie.th-0.3mS, Duty Cycle-1^
^CE(sat) & vBE(sat) vs Ic fT vs Ir

250
Jill TA.25<>C'
]jj| VCE^flVJ
200
JIN
f«150
^''fi'^sJ
(MHz) '
1' 00 I V
II
50
llll 111
10 100 1000 10 100 1000
!C (mA) X C (mA)
1.78.8100A
BD220 BD221 BD222
NPN SILICON SINGLE DIFFUSED MESA POWER TRANSISTORS
THE BD 220, BD 221 AND BD 222 ARE KPN CASE T0-220B

SILICON SINGLE DIFFUSED MESA POWER
TRANSISTORS DESIGNED FOR LOW SPEED
SWITCHING AND AUDIO AMPLIFIER APPLICATIONS.
THEY FEATURE LARGE SAFE OPERATING AREA.
ABSOLUTE MAXIMUM EATINGS

Collector-Base Voltage 'CBO
Collector-Emitter Voltage ^CEO
Emitter-Base Voltage 'EBO
Collector Current
Base Current
r
Total Power Dissipation • fc<25°C tot
« TA<25*C
T.
Junction Temperature 3
T
Storage Temperature Range stg
THERMAL RESISTANCE
Junction to Case 3.5°C/V
Junction to Ambient 70°C/W
%£ TS Ic
SAFE OHKA! riNG AREA, 1 160
10
^^T C - 25°C 140
H III
Tce-4V
Ta-25<>C
Pulse Test
120
3
100
*c BpE III
In
(A)l 80
,
li
J
!
BD220 - 60
;i f BD 220
BD221_^ 40
0.3
III
20
0.1 111 1 .1 III
10 / %
30 100 0.01 Ojl 10
VCE(V) *c(a)
BD220 BD221 BD222
BLBCTRICAL CHARACTERISTICS (
TA-25°C unless othsriae noted)
parameter SYMBOL Mm typ MAX UNIT TEST CONDITIONS
LV *
Collector-Fitter Breakdown Voltage
BD 220
*CB0
70 V
I -0.1A
C V°
BD 221 40 V
BD 222 60 V
Collector-Slitter Breakdown Voltage

BD 220
LV
^CER
*
V
v°- u Bîooa
75
BD 221 50 V
BD 222 70 V
Collector-49nitter Breakdown Voltage LV * I «fr.lA Veb-1.5V
c
BD 220/222 80 V
BD 221 60 V
Collector Cutoff Current BD 220/222

*CER 0.5 A ^jf5™ B
BE
=100A
Collector Cutoff Current BD 220/222

^BR 2 A VCE=50V R^-IOOA
Tc=150°C
Collector Cutoff Current BD 220/222 J

CKV
0.5 A V(a«65v VEB-1.5V
BD 221 2 mA Vcb-35V VEB-1.5V
Collector Cutoff Current BD 220/222 3 mA Vce=65V VEB-1.5V

BD 221
*CEV
5 A Vce=35V VSB-1.5V
T C =150°C
Emitter Cutoff Current BD 220 1 mA Vbb-7v ic=o

*EB0
BD 221/222 1 mA VEB-5V ic=o
Base-Emitter Voltage BD 220 V

Y * 0.70 1.1 V IC»0.5A VCE=*V
BE
BD 221 0.80 1.3 V IC= 1 A VCE=W
BD 222 0.90 1.5 V IC=1.5A Vce=4V
Collector-Gmitter Saturation Voltage v

v *
CE(sat;
BD 220 O.15 1 V IC=0.5A Ibb0.05A
BD 221 0.20 1 V IC= 1 A lB=0.1 A
BD 222 0.30 1 V IC-1.5A IB-0.15A
D.C. Current Gain BD 220 30 120 IC=0.5A >

nre
BD 221 30 120 IC» 1 A III >>
BD 222 20 80 IC=1.5A
Current Gain -Bandwidth product f 0.8 MHs IC-0.2A VCE-4V

T
« Pulse Test i Pulse Width-O.JmS, Duty Cycle* ljt
12.77 .MA
BD239 BD239A BD239B
NPN SILICON EPITAXIAL BASE POWER TRANSISTORS
THE BD 239, HD 239A AND BD 239B ARE NPN CASE T0-220B

SILICON EPITAXIAL BASE POWER TRANSISTORS
DESIGNED FOR SWITCHING, DRIVER AND OUIPUT
STAGES IN AUDIO AMPLIFIED. THE BD 239,
BD 239A AND BD 239B ARE COMPLEMENTARY TO
BD 240, BD 24QA AND BD 240B RESPECTIVELY.
ABSOLUTE MAXDflM RATINGS

BD 239 BP 239A BD 239B
with R^-IOOA
*CER 55V 70V 90V
with base open V
CB0 45v 60V 80V
Emitter-Base Voltage v
EBO 5V
Collector 'Current X
C 2A
Base Current
Total Power Dissipation
h 1A
(V 25°c ) p
tot 30W
T 150°C
a
Storage Temperature Range Tstg -55 to +150°C
THERMAL RESISTANCE
Junction to Case
> 4.17°C/W
I SAFE OPEilATING AREA (D.C.)

tot *A
50
40
>,
<«5.
y° *
n
t
? KS i
Jl t
<1
\
100 200
T
A(°C)
BD239 BD239A BD239B
ELECTRICAL CHARACTERISTICS ( T =25°C unless otherwise noted)

A
PARAMETER SYMBOL MIN MAX unit TEST CONDITIONS
Collector-Knitter Breakdown Voltage t

with external base-emitter resistance LV I »30mA Bgg-100 St.
CER* V
c
HD 239 55
BD 239A 70 V
BD 239B 90 V
with base open LVCBO * I =30*A I,,.*

C
BD 239 '
45 V
BD 239A 60 V
BD 239B 80 V
Collector Cutoff Current

BD 239, BD 239A
Ô 0.3 mA V-_-30V I„=0
BD 239B 0.3 mA V^60V lj=0
Collector Cutoff Current J

CES
BD 239 0.2 mA
BD 239A 0.2 mA
BD 239B 0.2 mA
Emitter Cutoff Current 'ebo

1 mA Veb ^
8
V*
Collector-Emitter Saturation Voltage VCE(sat) • 0.7 V I
C
.U I
B
=0.2A
Base-Emitter Voltage Vy
BE
* 1.3 V Vu V*T
D.C. Current Gain Ê * 40
15
V=U V
I
' 24 VCE=*V
=4V
C CE
Current Gain-Bandwidth Product £ 3 MHz

h ** 2* 3 Trf dOT
T
Palse Teat i Pulse Width 0.3mS, Duty Cycle 1%
^PE NORMALIZED
BIC VCE(sat) * VBE » l
C
*1
0.1 1 10
C (A) *C U) 12.77. 67011

BD239C through BD242C
COMPLEMENTARY
SILICON EPITAXIAL BASE AF POWER TRANSISTORS
THE BD239C THROUGH BD242C ARE COMPLEMENTARY CASE T0-220B

SILICON EPITAXIAL BASE AF POWER TRANSISTORS.
THEY FEATURE 100V MINIMUM COLLECTOR TO EMITTER
BREAKDOWN VOLTAGE. THE BD239C, BD241C ARE NPN.
THE BD240C, BD242C ARE PNP.
BD239C(NPN) BD241C(NPN)
ABSOLUTE MAXIMUM RATIHSS f«»~.*~-.-«».— BD24QC(PNP) BD242C(PNP)
ill
Collector-Emitter Voltage (RbE-100a) Vcer 115V 115V
Collector-Emitter Voltage (IB-O) VcBO 10OV 100V
Bnitter-Baae Voltage 5V
VfiBO 5V
Collector Current IC 2A 3A
Total Power Dissipation TC^25°C) p tot
( 30W 40W
(Ta«25<>c) 2W 2W
Operating Junction & Storage Temperature Tj. T 8 tg 55 to 1500c
THERMAL RESISTANCE
Junction to Case Ojo 4.17°C/W max. 3.12°C/W max.
Junction to Amtiont Oja 62.5°C/W max. 62.5°C/W max.
I T SAFE OPERATING AREA (D.C.)

tot A
50 Infinite Heat Sink
40
*
3°
V & i
? <4
^-3rxp
^\S& <
^nS
%\ t
100 200 100

T
A(°C) CB(V)
BD239C through BD242C
ELECTRICAL CHARACTERISTICS (T A -25<W

BD239C HD241C
PARAMETER SYMBOL BD240C BD242C OTIT TEST CONDTIONS
MIH MAX MIN MAX
Collector-Emitter Breakdown LVcer * 115 115 V IC-30mA RBE-100A

Voltage
Collector-Emitter Breakdown IVcEO « 100 100 V IC-30mA Ib-O

Voltage
Collector Cutoff Current ICEO 0.3 0.3 mA Vce-60V Ib-0

Collector Cutoff Current Ices 0.2 0.2 mA VCE-100V VBE-0
Emitter Cutoff Current Iebo 1 1 mA VEB-5V Ic-0
Collector-Knitter Saturation VCE(sat) * 0.7 V IC-IA IB-0.2A
Voltage 1.2 V IC-3A IB-0.6A
Base-Twitter Voltage VBE * 1.3 V IC-IA VCE-4V
1.8 V IC-3A VCE-4V
B.C. Current Gain Hj>e * 40 IC-0.2A VCE-4V
15 25 IC-IA VCE-4V
10 IC-3A VCE-4V
Small Signal Current Gain hfe 20 IC-0.5A Vce-IOV
f-lkHz
Current Gain-Bandwidth Product fT 3 MHz IC-0.2A VcB-lOV
3 MHz IC-0.5A VcE-lOV
* Pulse Teat i Pulse Width-O.JmS, Buty Cycle-1^
NORMALIZED
Y" l
C
YCE(a»t) & VBE * *C
0.
3.78.870OE.O870E
BD240 BD240A BD240B
PNP SILICON EPITAXIAL BASE POWER TRANSISTORS
THE BD 240, BD 240A AND BD 240B ARE PUP CASE T0-220B

DESIGNED TOR SWITCHING, DRIVER AND OUTPUT
STAGES IN AUDIO AMPLIFIERS. THE BD 240,
BD 239, BD 239A AND BD 239B RESPECTIVELY.
ABSOLUTE MAXIMOM RATINGS

BD 240 BD 240A BD 240B
Colleotor-Eaitter Voltage
with RBE-100A 55V
-VcER 70V 90V
with base open -VCEO 45V 60V 80V
-VEBO 5V
Coll actor Currant -IC 2A
Base Current
-IB 1A
Total Power Dissipation (Tc«25°C) ptot 30W
*J 150°C
Storage Temperature Range T 8 tg -55 to +150°C
THERMAL RESISTANCE
Junction to Caae
»je 4.17°C/W
P YS T
tet A SAFE OPERATING AREA (P.C.)
50
40
w 30
»»
K*B.-I
J* 20 faV*
IV
10
^
0=1
9
_JM |
10 2 00
100
CE(V)
BD240 BD240A BD240B
ELECTRICAL CHARACTERISTICS CrA=25°C unleas otherwise noted)
PARAMBTHg SYMBOL MIN MAX am TEST CONDITIONS
Collector-Jaaitter Breakdown Voltage

With external base emitter resistance -LVcBB* -I c-30mA Bbe-IOOX
BD 240 55
BD 240A 70
BD 240B 90
With base open BD 240 -WCBO* 45 -IC-30mA Ib-0

BD 240A 60
BD 240B 80
Collector Cutoff Current -I,CEO

BD 240, BD 240A 0.3 -VCE-30V Ifl-0
BD 240B 0.3 -Vcb"60V Ib-0
Collector Cutoff Current BD 240 -Ices 0.2 -VCE"»5V Vbe-O

BD 24QA 0.2 -Vcb=60V VBE-0
BD 240B 0.2 -VcE=80V Vbe=0
Baitter Cutoff Current 1 mA -VEB=5V Ic=0
Collector-Emitter Saturation Voltage -VCB(sat) 0.7 V - Ic-IA -Ib-0.2A
Base-Emitter Voltage -Tbe* 1.3 V -IC=U -Vce=4V
D.C. Current Gain 40 -IC -0.2A -VQE-4V

15 -Ic=U -VCB-4V
Current Gain-Bandwidth Product MHz -Ic-0.2A -VCE-IOV
* Pulae Test t Pulse Widths0.3mS, Duty Cycle=ljt
NOHMAUZED
va I, VM re I.
1.6 1 1.6
1.4
IIIJ 1
1.4
IP
VasV
1
1
. Pulse Test
1.2 III 1.2
1
III 1
ii|i VBE
1.0 H 1.0
« -VCB-4V
0.8
0.6
IP
lir
Vc AV
£ 0.8
I
0.6 llMilt
1
'
T>l-25°C VCE(sat)
0.4 "
II
Pul se rea 0.4 .

J
v
1
0.2 ^ 0.2
1° h"10h
0.01
III
0.1
| 1
1
I]
10 0.01
iU 0.1 10
- IC (A) - IC (A)
12.77.0870E
BD241 BD241A BD241B
CASE TO-220B
THE BD 241, BD 241A AND BD 24IB ARE NFN
DESIGNED TOR SWITCHING, DRIVER AND OUTPUT
STAGES IB AUDIO AMPLIFIERS. THE BD 241.
BD 242, BD 242A AND BD 242B RESPECTIVELT.
ABSOLUTE MAXIMUM RATINGS BD241 BD241A BD241B

Collector-Quitter Voltage (RBE-100a) VCER 55V 70V 90V
Collector-Emitter Voltage(lB„o)
VCEO 45V 60V 80V
Emitter-Base Voltage vEBO 5V
Base Current IB 1A
Total Power Dissipation © Tc425°C Ptot 40W
e ta< 250c 2W
Junction and Storage Temperature Tstg -55 to +150°C
THERMAL RESISTANCE
Junction to Case Ojc 3.12°c/w max.
Junction to Ambient
°ja 62.5°C/W max.
P vs T SAFE OPERATING AREA (l).C.)

tot A
10 —
*o PC-25°C
iii
1
40 "$'
30
s,s
1
~"W
fc
\ 1
M •*
I
1
^-4|
ii
'% 0.3 1
BD2 1
TT"
BD2 UA-4-il
BD2
0.1
100 200 3 10 30 100
t
a(°c)
VCE(V)
BD241 BD241A BD241B

PARAMETER SYMBOL MIN MAX UNIT TEST CONDITIONS
Collector-Emitter Breakdown Voltage LVCBO* IC-30mA Ib-0
BD241 45 V
BD241A 60 V
BD241B 60 V
Collector Cutoff Current ICEO

BD241, BD241A 0.3 mA Vce-30V Ib-0
BD241B 0.3 mA VCE-60V Ib-0
Collector Cutoff Current BD241 ices 0.2 mA VCE-45V VBE-0

BD241A 0.2 mA VCE-60V Vbe-0
BD241B 0.2 mA vcb-Qov vbe-o
Emitter Cutoff Current IEBO 1 mA VEB-5V Ic-0
Base-Emitter Voltage VBE * 1.8 V IC-3A VCE-4V
Collector-Emitter Saturation Voltage VCE(aat)* 1.2 V IC-3A IB-0.6A
D.C. Current Gain Hys • 25 IC-1A VCE-4V

10 IC-3A VCE-4V
Small Signal Current Gain hfe 20 IC-0.5A VCE-10V

f-lkHs
Current Gain-Bandwidth Product ft 3 MHz IC-0.5A Vce-IOV
* Pulse Test s Pulse Width-0.3mS, Duty Cycle- 1%
Ê NORMALIZED
T"
*C
VCE(aat) ft
V
BE * l
C
J
C (A)
12.77.8700E
BD242 BD242A BD242B
THE 3D 2*2, BD 242A ABD BD 242B ABE PBP CASE TO-220B

smear epitaxial base power trabsistors
DESIGBED TCR SWITCHING, DRIVER ABB OUTPUT
SATAGES IB AUDIO AMPLIFIERS. THE BO 242,
BD 242A ABD BD 242B ABE COMPLEHEBTARY TO
BD 241, BD 241 A ABD BD 241B RESPBCTTVELT.
BCE
ABSOLUTE WAXIMDM RATINGS BD242 BD242A BD242B

Collector-E«ittor Voltage (Rbb-IOOa) -VCER 55V 70V 90V
Collector-Emitter Voltage (ifi-O) -VCEO 45V 60V 80V
Bnitter-Base Voltage
-VEBO 5V
Collector Current
-ic 3A
Base Current -IB 1A
Total Power Dissipation • Tc425°C
*tot 40W
© Ta« 25°C 2W
Junction and Storage Temperature T J. Tstg -55 to +150°C
THERMAL RESISTANCE
Junction to Case 3.12°C/W max

Jmnction to Ambient
62.5°C/W max
P vs T SAFE OPERATING AREA (!).C.)

tot »
10
50 — Pr« •>&?.
1
-
40
30 ^k>
re
1^ *•
fc
—
1
~~Hf
tJI
J'
V
i
'. 1 II
\ 0.3 '
HD24 2-1
BD24 2A
BDS4 2B
0.1
100 200 3 10 30 100
t ~V
a(°c) CE(V)
BD242 BD242A BD242B

(
PARAMETER SYMBOL MIN MAX UNIT TEST COHDITlbHS .
Collector-Emitter Breakdown Voltage LVcBO* -IC-30mA Ib-0

BD242 45 V
BD242A 60 V
BD242B 80 V
Collector Cutoff Current -ICEO

BD242 BD242A 0.3 mA -VCE-30V Ib-0
BD242B 0.3 mA -VCE -60V I B -0
Collector Cutoff Current BD242 -Ices 0.2 mA -VCE-45V VBE-0

BD242A 0.2 mA -VCE-60V VBE-0
BD242B 0.2 mA -VCE-80V VBE-0
Quitter Cutoff Current -lEBO 1 mA -VEB-5V Ic-O
Base-Emitter Voltage -Vbe * 1.8 V -IC-3A -VCE-4V
Collector-Emitter Saturation Voltage " vCE(sa10* 1.2 V -I C -3A -IB-0.6A
B.C. Current Gain H?E * 25 -IC-1A -VCE-4V

10 -IC-3A -VCE-4V
Small Signal Current Gain hfe 20 -IC-0.5A -VCE -10V

f-lkHz
Current Gain- Bandwidth Product fT 5 MHz -IC-0.5A -Vce-IOV
* Pulse Test « Pulse Width-0.3raS, Duty Cycle-1&
FE N011MALIZEI)
VCE(sat) & VBE va Z
C
1.6
1.4
1.0
0.8
tf 0.6
0.4
Pulse T est Hi
0.2 T»-?ROJ
-VC E-itv
0.01 0.1 10
-IC (A)
12.77.0870E
BD533 BD535 BD537
CASE TO-220B
THE BD 533. BD 535 AID BD 537 ARK HIV
SILICON EPITAXIAL BASS POWER- TBARSISTORS
DESIGNED FOR SWITCHING, DRIVER AMD OUTPUT
STAGES Iff AUDIO AMPLIFIERS. THE BD 533.
BD 535 AID BD 537 ARE COMPLEMEHTAHT TO
BD 534. BD 536 AID BD 536 RESPECTIVELY.
BCE
ABSOLUTE MAXIMUM BATHOS BD 53 3 BD 535 3D 537
Collector-Base Voltage VCBO 45V 60V 80V

Collector-Emitter Voltage VCBO 45V 60V 80V
Quitter-Base Voltage VEBO 5V
Collector Peak Current (t 410mS) ICM 8A
Base Current IB 1A
Total Power Dissipation © TC«25 C *tot 50V
Junction Temperature *i
150<>C
THERMAL RESISTANCE
Junction to Case °JC 2.5°C/W max
Junction to Ambient Oja 70°c/w max
SAFE OraRATING AREA (U.C.)
0.1
3 10 30 100
vci(v)
X
C (A)
BD533 BD535 BD537
PARAMETER SYMBOL MIN TYP MAX UHIT TEST CONDITIONS

Collector-Base Breakdown Voltage BVcBO IC-O.lmA Ie-O
BD 555 45 V
BD 535 60 V
BD 557 80 V
Colleotor-Eaitter Breakdown Voltage LVcEO* I c -10CaA Ib-0

BD 533 45 V
BD 535 60 V
BD 537 80 V
Enitter-Base Breakdown Voltage BVebO Ij-O.ImA IC-O

BD 555, BD 555, BD 557 5 V
Collector Cutoff Current ICBO

BD 555 100 "A VCB-45V Ie-0
BD 555 100 HA VcB-ÔV Ig-0
BD 557 100 Vcb-SOV Ig-0
Collector Cutoff Current Ices VCE-45V Vbe-0

BD 555, BD 555, BD 537 100 uA
Baitter Cutoff Current Iebo 100 HA VEB-5V I C -0
Collector-Quitter Saturation Voltage vCE(sat # >

0.27 0.8 V IC-2A IB-0.2A
0.8 V IC-6A Ib-0..6A
Base-Emitter Voltage * V
be 0.92 1.5 IC-2A VCE-2V
D.C. Current Gain HPE •

BD 533 20 I c -10mA VCE-5V
BD 535 20
BD. 537 15
BD 535 25 IC-2A VCE-2V

BD 555 25
BD 557 15
All types 40 IC-500«A VCE-2V
Current Gain-Bandwidth Product fT 5 MHz IC-250mA VCE-1V
» Pulse Test i Pulse Vidth-0.5«S, Duty Cycle-1^
12.77.8500E
BD534 BD536 BD538
CASE TO-220B
THE BD 554. BD 536 ARD BD 538 ARE PHP
SILICOR EPITAXIAL BASE POUR TRANSISTORS
DESIGNED FOR SWITCH1BC, DRIVER HID OUTPUT
STAGES IH AUDIO AMPLOTERS. THE BD 534.
BD 536 AMD BD 538 ARE COHPLEHBRTARY TO
BD 533* BD 535 AID BD 537 RESPECTIVELY.
ABSOLUTE MAXIMUM RATIBGS BD 534 BD 536 BD 538
Collector-Base Voltage -VCBO 45V 60V 80V
Colleotor-Emitter Voltage -VcEO 45V 60V 80V
Emitter-Base Voltage -VeBO 5V
Collector Current -IC 4A
Collector Peak Current (t<10mS) -IcM 8A
Base Current -IB 1A
Total Power Dissipation 9 TC <25°C Ptot 50V
Junction Temperature Tj 1500C
Storage Temperature Range Tstg 55 to +150°C
THERMAL RESISTANCE
Junction to Case 2.5°C/W max.
Junction to Ambient 70°C/V max.
SAFE OPERATING AREA (».C.)

10 ==1 : TC-25°C
1 >
0.3 % lrw>5
J.^BD? 36
jf BD! 38
0.1
13 ~V
10 30
ctl,
100
CB(v)
C (A)
BD534 BD536 BD538

PARAMETER SYMBOL MIE TYP MAX UEIT TEST COHDITIOES
Collector-Base Breakdown Voltage -BVCBO -IC-O.lmA Ie-0

BD 534 45 V
BD 536 60 V
BD 538 80 V
Collector- Emitter Breakdown Voltage -LVCEO * -IC-100mA lB-0

BD 534 45 V
BD 536 60 V
BD 538 80 V
Emitter-Base Breakdown Voltage -BVEBO -lE-0.1mA Ic-0

BD 534, BD 536. BD 538 5 V
Collector Cutoff Current -ICBO

BD 534 100 -VCB-45V Ie-0
BD 536 100 -VCB-60V IE-0
BD 538 100 -VCB-80V Ie-0
Collector Cutoff Current -ices

BD 534 100 -VCE-45V Vbe-0
BD 536 100
BD 538 100
fitter Cutoff Current -lEBO 100 -VEB-5V IC-0

P*
Collector-Emitter Saturation Voltage -v * O.J 0.8 V -IC-2A -IB-0.2A
CE(sat)
0.8 V -IC-6A -IB-0.6A
Base-Emitter Voltage -Vbe » 0.95 1.5 V -IC-2A -VCE-2V
D.C. Current Gain BD 534 Hyg * 20 -IC-10mA -VCE-5V

BD 536 20
BD 538 15
BD 534 25 -IC-2A -VCE-2V

BD 536 25
BD 538 15
All types 40 -IC-500mA -VCE-2V
Current Gain-Bandwidth Product fT 3 MHz -IC-250mA -Vce-IV
Pulse Test j Pulse Width-0.3mS, Duty Cycle-1^
12.77.O850E
BD633 through BD638
COMPLEMENTARY
CASE TO-220B
THE BD633 THROUGH BD638 ARE SILICON EPITAXIAL
BASS POWER TRANSISTORS DESIGNED TOR SWITCHING,
DRIVER AND OUTPUT STAGES IN AUDIO AMPLIFIERS.
THE BD$33» BD635, BD637 ARE NPN AND ARE COM-
PLEMENTARY TO THE PNP TYPE BD634, BD636, BD638.
BD633fNPN) BD635(NPN) BD637(NPN

ABSOLUTE MAXIMUM RATINGS For w ^m Mav Mamnx ^m
<t . . nrmmlM BP634(PNP) BD636(PNP) BD63e(PNP)
BD636(
Collector-Emitter Voltage VCEO 45V 60V 80V
Emitter-Base Voltage VEBO 5V 5V 5V
Collector Current Jq 2A 2A 2A
Collector Peak Current Iqjj 5A 5A 5A
T otal Power Dissipation (Tc<25°C)
Ptot 30W
(TA <25°C) 2W
Operating Junction & Storage Temperature Tj, T8 tg -55 to 150°C
THERMAL RESISTANCE
Junction to Case 4.17°C/W
Junction to Ambient 62.5°C/W
Ptot vs TA SAFE OPERATING AREA (DC)

j
40
r
tot
I
(W) ic
30
(A)
I
T( =25°C
s
1
^ ~ ——~
20 >&N k
3
---
fo
"%&
t
0.4 \
10
v
>K f s
63i "«=i-
BD635, 636 \
BD637, 638
0.1
100 200 10 40
TA (°C) VCE (V)
V
BD633 through BD638

PARAMETER SYMBOL MIR MAX OTIT TEST COKDITIORS
Collector-Base Breakdown Voltage BVCBO IC-O.laA Ie-0
BD633, 634 45 V
BD635, 636 60 V
BD637, 638 100 V
Collector-Emitter Breakdown Voltage LVCBO • IC-30mA lB-0

BD633, 634 45 V
BD635, 636 60 V
BD637, 638 80 V
Emitter-Base Breakdown Voltage BVEBO 5 V iB-lmA Ic-0
Collector Cutoff Current ices

BD633, 634 0.2 A Vce-45V Vbe-0
BD635, 636 0.2 >A VcE"60V VbeÔ
BD637, 638 0.2 mA Vce-IOOV VBE-0
Collector-Emitter Saturation Voltage VCE(sat)« 0.6 V IC-1A IB-0.1A
Base-Emitter Voltage VBE * 1*3 V IC-1'A Vce-2V
D.C. Current Gain Rpe * 40 IC-25mA VCE-2V

25 IC-lA VCE-2V
Current Gain-Bandwidth Product fT 3 MH* IC-0.2A VCB-10V
* Pulse Test 1 Pulse Width-0.3mS| Duty Cycle-1^
CURRENT GAIN
D.C.
V BE AND Vce,,,,,
vs COLLECTOR CURRENT vt COLLECTOR CURRENT
1.0
PtL Lse Test
Hfe Ji
I
Ta«25°C[
(V)
mi
I
160 mi 0.8
,Ti I
v/de ''li
<s> '
M Bt
'!
120 0.6
PNP
I
80
^4? s|
0.4
if
40 -[ va :-2V. 0.2 — CE in t)@ C oi B

-
TA 25°C
M lse
I
~r I
0.01 0.1 10 0.01 0.1 1 10
'C(A) 'C(A)
2.78.8700E.0870E
BF158 BF159 BF160
NPN SILICON RF SMALL SIGNAL TRANSISTORS
IBB BF168, BF16S, BF160 ABB NPN SILICON CASE TO-106

PIANAB EPITAXIAL TRANSISTORS FOB BF
SMALL SIGNAL APPLICATIONS SOCH AS BT-IF
AMPLIFIERS IN PM RECEIVERS AND THIBD
VIDEO IF AMPLIFIERS IN TV BECEIVEBS.
CBE
ABSOLUTE MAXIMUM EATINGS BF168 BP169 BF160

Collector-Baae Voltage VCB0 30V 40V 30V
Collector-Skitter Voltage VCEO 12V 20V 12V
Enitter-Saee Voltage VEBO 2V 2V 2V
Total Power Dissipation (*A<26*C) Pt ot 2MMT
derate ariT/»C above 25*C
Operating Junction It Storage Tenperature Tj , Tstg -66 to 126*C
ELBCTMCAL CBABUCTEBISTICS (*A«26*C nnleaa otherwiee noted)

PARAMETER SYMBOL MIN TIP MAX UNIT TEST CONDITIONS
Col lector -Base Breakdown Voltage BVCBO IC=0.1»A IE=0
BF168, BF160 30
BF169 40
Collector-Eaitter Breakdown Voltage LVCEO IC«3*A (pulaed)
BF168, BF1«0 IB-O
BF159
Enltter-Baae Breakdown Voltage BVEBO IEbO.IwA IC-O
All type.
Collector Cutoff Current ICBO 100 dA VCB-16V l£.0
All type* 6 VCB-16V l£«0
TA>66*C
Col lector ^fiaitter Saturation Voltage VCE(eat)
All type. 0.1 0.6 IC-10a* IB-la*
D.C. Current Gain BF188, BF16S Bfg 20 70 IC-4aA VCE*10V
BF180 20 70 IC»3«A VCE>10V
Current Gain-Bandwidth Product
BF168, BF169 fT 700 MHz ICrfaA VCE.10V
BF160 400 600 MHz IC«3*A VCEW10V
Feedback Capacitance BF168, BF160 Cre 0.8 1.2 IC-6aA VcEslOV fclMHz
I*
BF160 0.8 1.2 I* ic=a«A VCcVlOVf.uiHa
Power Gain BF168, BF189 Ope 22 26 dB K>5aj* VCB-10V f«40MHs
BF160 32 dB IC»3«A VCB=8V f»10.7MBi
Output Conductance BF168 only "JoT 0.2 0.3 IC«6nA VCB-10V f.40MHs
Noiae Figure All type* H
NF dB IC«4aA VCEfIOV BjMOOa
f«40MH«l
BF158 BF159 BF160
TYPICAL CB AMrTKRTCT TCS AT Ta=26«C
TS IC *T • IC
JfîiiyW Teat VCB-lOV
II
*c &
III! 800
n
»"ml
u N *T «00 \s
%E }J
s (W«) Y
II V 400 XI 1
n
t|
4
200
u
n 1
mi
0.1 1 10 100 0.1 1 10 100
It (mK)
It 0»A)
(tpt Tl I NT n i
IC • tmk IC=4«A
II mi
V(, It xlOV VCE=10V
40 "Bri=4 won
Hill
Gpe30 s NF 6
N4 (dB) 1
(OB)
20 tt ,.
^ ,
4
s t
1
'1
*
10 1
1 II mi
10 1000 0.1 1 10 100
* (MB*)
3.78.3100B
BF254 BF255
THE BF254, BF255 ARE NPN SILICON PLANAR CASE TO-92E

EPITAXIAL TRANSISTORS. THE BP254 .IS
INTENDED TOR USE IN AM/FM IF AMPLIFIERS
AND TOR INPUT STAGES IN THE SHORT,
MEDIUM ABD LONG WAVE BANDS. THE BF255
IS INTENDED TOR USE IN PRE-STAGES AND
CONVERTER STAGES IN THE VHP BAND.

Total Power Dissipation (Ta«25°C) Ptot 300mV
derate 3mw/°C above 25°C
Operating Junction & Storage Temperature Tj, T 8 tg -55 to 125°C
PARAMETER SYMBOL BF254 BF255 UNIT TEST CONDITIONS

Emitter-Base Breakdown Voltage bvebo 5 5 V lE-10uA IC-O
Collector Cutoff Current ICB0 0.1 0.1 H VCB-30V Ie-0
Collector Cutoff Current ICEO 1 1 H VCE-20V Ib-0
Collector-Bnitter Saturation VcE(sat ) 0.1 0.1 V IC-10mA IB-lmA
Voltage
Base-Emitter Voltage VBE 0.67 O.74 0.67 0.74 V IC-lmA VCE-10V

D.C. Current Gain HFE 67 115 220 36 67 125 IC-lmA VCE-10V
Current Gain-Bandwidth Product fT 260 200 MHz IC-lmA VCE-10V
Feedback Time Constant Ccrbb' 25 40 20 35 PS IC-lmA VCE-5V
f -31.8MHz
Feedback Capacitance Cre 0.85 0.85 PF IC-lmA VCE-10V
f-450KHz
Noise Figure NF 4 4 dB IC-lmA VCE-10V
RG-IOOA f-lOOMHz
BF254 BF255
BP254 TYPICAL y-PARAMETERS AT TA-25°C Ic-lmA CE-lOV
pv *22 -6Û
t -450kHz -2 - s y2l| -36mU
g u -0.33mV |y12 | l
Coaaon Emitter b --0.065mV

1
-e
12
-90° -°21 -0° b
22
-4.5Û
-23pP C -l'6pP
C
u 22
f-10.7MHa ^-0.45"^ |y12

|-65pv
Fail
-36mU e22 -8.5yaj
Common Bnitter b -0 -90° -10° b -0.11mir
n -1.5mtr
12 "•a 22
C -22pP C -1.6pP
11 22
f-lOOMHz e11 -36mtr |y12

|-420pu
|
y2ll -33mtf «22- 2 ^V
Common Base - b -3mV -0
w -68° -°21 -146° b -l.l«tr
1]L 12 22
- C
n -4.8pP C
22
-1.75pP
BP255 TYPICAL y-PARAMBTERS AT T A-25°C IC-lmA cE-ioy
|-36mU
f-450kHz g n -0.5mU |y12 |-2.^ |y 21 g22 -2.7/»v
-0 -900 -0 -0O
Common Emitter b
n -0.1mU 12 21
b
22
-4.5^v
C -32pP C -1.6pP
1;l 22
f -10.7MHz g n -0.6mU |y12 |-6q^ |y 21

|-36mv g2 2-4.5û
b -2mu °
Common Emitter
11
-e
12
-90° "°21 - 10 b
22
-0.11«»U
C -30pP C -1.6pP
11 22
f-lOOMHz
gll
=3emV
|y12 -4icjiy
| |y 21
|«34o*r g 22 -i^
Common Base - b-.-lmt;
-°12 ~*? -©21 -1 -* 00 \> -l.lmv
22
- C C -1.75pP
n -1.6pP 22
HPE vs ic *"T vs IC
200 500
TA-25°C
mi III mi mill
rvcE-ioy
160
III
xesx 400
^
<*
'
\
HI' „.
.}
HPE
120 - o*J» —*
(MHz)
30d- _ 1/2/
80 y irm - '
lLo*ft
\2$2""
-
f/jp
(f
mil
"N
40
<»'
1 100-
c B-10T
-250c
1 urnri
0.1 1 10 100 o.i 1 10 100
JC (mA) XC («A)
2.78.3300A
BF257 BF258 BF259
NPN HIGH VOLTAGE VIDEO AMPLIFIERS
THE HT257t HK58, HF259 ARE HPN -SILICON

PLANAR TRANSISTORS DESIGNED TOR HIGH
VOLTAGE VIDEO OUTPUT STAGES IN BLACK-
AND-WHITE AID COLOUR TV-RECEIVERS.
C E B
ABSOLUTE MAXIMUM RATINGS BF257 BF256 BF259
Collector-Base Voltage *CBO 160V 250V 3O0V
Collector-Baitter Voltage CEO 160V 250V 300V
Knitter-Base Voltage VEBO 5V

Collector Current IC lOOaA
Total Power Dissipation • *C «25°C Ptot 5W
• *A«25°C 800»M
Operating Junction & Storage Temperature Tj» Tstg -65 to 200°C
THERMAL RESISTANCE
Junction to Case 35°C/W
Junction to Aabient °Ja 220°C/W
*tot TS TA SATE OPERATING AREA (P.C.)

5 100
\
\
SJ h 30
wh
*tot
(w)
5
^ r
Kîi
1 1
%
In («A) 10
s*
^&
^*o f.
BP 2b7 ,
!2i is Ink BT 238-—
1 V 259
100 200 10 100 1000
Ik (°C) CE (V)
BF257 BF258 BF259
BP257 BF258 BF259

PARAMETER SYMBOL URTT TEST COHDITIOHS
Ml? MAX MIR MAX MIR MAX
Collector-Base Breakdown Voltage B^CBO 160 250 300 V IC-O.laA Ig-0
Collector-Emitter Breakdown LVceO * 160 250 300 V IC-l&aA IB-O

Voltage
Emitter-Base Breakdown Voltage BVgBO 5 5 5 V IpO.lmA I c -0
Collector Cutoff Current ICBO 50 nA VcB-lOOV lE-0

50 nA VCB-200V Ie-0
50 nA VCB-250V Ib-0
Emitter Cutoff Current Iebo 50 50 50 nA Vjb-3V Ic-0
B.C. Current Gain HpE * 25 25 25 IC-30mA VCE-10V
Collector-Emitter Saturation VCE(sat)* 1 1 1 V IC-3CmA lB-6mA

Voltage
Current Gain-Bandwidth Product fT 50 50 50 MHz I C -15»A VCE-20V
Collector-Base Capacitance Ccb 5 5 5 pP VCB-30V IE-0

f-lMHz
• Pulse Test 1 Pulse Vidth-0.3mS, Duty Cycle-1^
Hwe (NORMALIZED) vs I fT vs Ic
c
2.0 100 5P
Ta-^'V A-25°C
1rCE-20V
1.6 60
,""' S
e fT
a"
<
^~-
"*^ csr,|||i
(MHs)
\
if \
§ 0.8
|
&• 0.4
J
1
it
llll nun
II IN ,
llll
0.1 1 10 100 10 100

IC («A) X C(«A)
12.77.7500B
BF297 BF298 BF299
THE BF297. HF298, BF299 ARE HFN SILICON

CASE TO-92F
PLANAR TRANSISTORS DE3IGNED TOR HIGH
VOLTAGE VIDEO AMPLIFIERS IN TELEVISION
RECEIVERS. THEY FEATURE GOOD FREQUENCY
CHARACTERISTICS.
CEB
ABSOLUTE MAXIMUM RATINGS BF297 BF298 BF299

Collector-Base Voltage CBO 160V 250V 300V
Collector-Emitter Voltage vCEO 160V 250V 300V
Eaitter-Base Voltage 7EB0 5V
Collector Current ic IOObA
Total Power Dissipation • TC $25°C ptot 1.5W
• *A* 2 5°C 625>W
Operating Junction & Storage Temperature Tj h Tstg -55 to 150°C

(
BF297 BF298 BF299

PARAMETER SYMBOL MIN MAX MIN MAX MIN MAX UNIT TEST CONDITIONS
Collector-Base Breakdown Voltage wCB0 160 250 500 V IC-O.laA Ig-0
Collector-Eaitter Breakdown Voltage LTCEO 160 250 300 V I c -10aA Ig-0
Saitter-Base Voltage BVgjjo 5 5 5 V Ig-O.laA I c -0
Collector Cutoff Current 1 CB0 50 nA VCB-100V Ib-O
50 nA VCB-200V Ig-0
50 nA VCB- 2 50V Ie-°
Emitter Cutoff Current JEB0 50 50 50 nA VEB"'V Ic"°
Collector-Eaitter Saturation Voltage CB(sat) 1 1 1 V I C -30aA Ib-3mA
Baee-Saitter Saturation Voltage TBE(«at) 0.85 0.85 0.85 V I -30«A I -3«A
C B
D.C. Current Gain
"fe
10
150 30
10 10
V 5"4 VCE"10V
30 150 30 150 I C -3CtoA VCE-10V
10 10 10 I -100»JIVCE-10V
C
Current Gain-Bandwidth Product f 50 50 50 MHz I -3C«A VCE-10V
T C
Collector-Base Capacitance Cob PF
5 5 5 OB"** IE"
f-lMHz
'
BF297 BF298 BF299

TTPICAL CHARACTERISTICS (
TA-25°C unle»8 otherwia* noted)
Ptot r. TA SAFE OFBUTHR AREA (S.C.)

2.0 100
1.5
r
tot V
00 1.0 fir
N
X',
0.5
*o\ >Kfc
^J*
««. ^
50 100 150 200 5 10 50 100 300
*A (°C) VCE (V)
HFE r* XC VBE(«»t) * TCE(sat) • JC
200 — - -i-m
160
120
Hfg TOW
80
40
IlillH
Ml
$ L jT-ffl
4W
0.1
Pols* TMt
1
II
10
1 II
II
100
1 1 III
1000
0.1
JC («A)
'T t» tc
1 Ci* & C fc y, TH
100 100
TÎOT
T
60 III
j: 16
30 *
60 (PF)
>
10
(MR*)
40
Tff ii LCbfc
20
III
10 100 10 100
IC («A) YH (T)
12.77.7300B
1
BF336 BF337 BF338

THE BP336, BF337, H?338 ARE 1IPH SILICON

PLANAR TRANSISTORS DESIGNED FOR R-G-B
AND COLOUR DIFFERENCE OUTPUT CIRCUITS OP
COLOUR TELEVISION RECEIVERS. THEY
FEATURE HIGH BREAKDOWN VOLTAGE AND GOOD
FREQUENCY CHARACTERISTICS.
C E B
ABSOLUTE WAXPnm RATINGS BF33< BF337 BF338

Collector-Emitter Voltage(RBE -IIca)
CER 185V 250V 300V
Collector-Emitter Voltage (Ib-O)
ceo 180V 200V 225V
vebo 5V
Collector Current
ic 100mA
Total Power Dissipation • Tc <25°C *tot 5w
• Ta<"25°C 800mV
Operating Junction & Storage Temperature Tj * T8tg -65 to 200<>C
THERMAL RESISTANCE
Junction to Case
°Jc 35°C/W max.
Junction to Ambient 220OC/V
°0» max.
*tot TA SAFE OPERATING AREA (B.C.)

100
*- flflff^
+ Ml."
Ptot
\h 30
(w)
3 ^\V KlY
\ (») 10
h BP336 1
t$*t a ink [f oryu Tn

*
1
, " u
100 200 1 10 100 1000
TA (°c) CK (V)
BF336 BF337 BF338
BP336 BF337 BP338

PARAMETER SYMBOL URIT TEST CORDITIORS
MIR MAX MIR MAX MIR MAX
Collector-Baa* Breakdown Voltage OTCBG 185 250 300 V I c .0.1mA IE-O
Colleotor-Eaitter Breakdown LVcBR* 185 250 300 V IC-lmA RBE-lkA

Voltage Tj< 150OC
Collector-Beitter Breakdown I*CB0 # 180 200 225 V IC-4«A Ib-0

Voltage
Emitter-Base Breakdown Voltage BVgBO 5 5 5 V Ig-O.lmA IC-0
Collector Cutoff Current ICER 100 ^

pk
VCB-150V RBE-lk-ft
100 VCE-200V RBE-lkn
100 M VCE-250V RBE-lkn
Base-Fitter Voltage Vbe * 1.2 1.2 1.2 V IC-30«A VCE-10V
HFE * 20 20 20 I C -3C«A VCE-10V

B.C. Current Gain
Current Cain-Bandwidth Product fT 50 50 50 MHs I C -3C«A VCB-20V
Feedback Capacitance Cre 3-5 3-5 3.5 P* IC-1C«A VCE-20V

f -0.5MHz
Feedback TiAe Constant Ccrbb' 100 100 100 PS Ig-30aA VCB-20V

f-lOMH*
fT vs Ic
hto (NORMALIZED) vs i c
2.0 100
*A- 250c
111 TA-25°C
pulse i est CB-20V
80
1.6
llH 1
^
?22r
J
?n 1.2 fT
\
M (MHz)
iJ
+*•
„-*bffli c*r,,|
s
1 \
i 0.8 \1
1
Del
J. 0.4 \
M1
mi llll
10 100 10 100
0.1 1
X C («A)
IC (mA>
12.77.7300B
BF368 BF369
CASE T0-92A
THE BF368, BF369 ABE NPN SILICON PLANAR
EPITAXIAL TBANSISTOBS FOB W-IF SMALL
SIGNAL AMPLIFIER AND OSCILLATOR APPLI-
CATIONS.
ABSOIPTB MAXIMUM RATINGS RF368 BF369

Collector-Emitter Voltage VCBO 15V 20V
Bmitter-Base Voltage VEBO 4V 4V
Collector Current It 50aA
Total Power Dissipation (*A^25 # C) Ptot 310bW
derate 2.81uW/°C above 25»C
Operating Junction ft Storage Temperature Tj , Tetg -55 to 135°C
TA=25*C>
PARAMETER BF368 HF389

Collector-Base Breakdown BVCBO 25 30 V ICeO.laA IbbO
Voltage
Collector-Fitter Breakdown LVCEO* 15 20 V IC=3aA IB=0
Voltage
Emitter-Oase Breakdown Voltage BVEBO 4 V
4 l£s0.01aA IOO
Collector Cutoff Current ICBO 100 100 nA VcB=15V Ib.0
Collector-Bnitter Saturation VCE(sat) 0.12 0.4 0.1 0.4 V IOlOa* Ib»1uA
Voltage
Base-Enitter Saturation VBE(sat) 0.84 1.0 0.84 1.0 IOIObA IB«lnA
Voltage
D.C. Current Gain HFE 35 60 125 70 110 220 lC*ln* VCE«10V
Current Gain -Bandwidth Product fT 250 400 400 520 MHs IC=1«A VcEslOV
Output Capacitance Cob 1.3 1.7 1.3 1.7 pF VCB=10V 1^x0
fslMHs
Collector-Base Tiae Constant Ccrbb' 20 26 pS IC=1«A VCB=5V
f=31.8MHi
* Pulse Test t Pulse Width-0.3«S, Duty Cyclesljf
BF368 BF369
TYPICAL CHARACTERISTICS AT TJU25«C
l£ f. f v. *C
CE=10V Vc^lOV
llll 1
i« Test
800
L'
fT WO II
(MHz)
400 MS§£>- <**
200
W"
n i
HI
0.1 10 100
IC («A)
Cob 4 Cre v» VCB NF t« f

10
lE-0 IC-lat
II
Vcb=6V
8 - Bs >4U(in
3
llll
(l*) NF 6
2 (dB)
I
—£?S-.
"CrT"
4
2
«^_. 1w
iili
12 16 0.1 10 100
VCB (V) t (MH»)
TYPICAL COMMON BASE y-PARAMBTERS AT f«100MH» Vcb«BV Ia»2S»C

=3=^^.-1001000^-^, 100^^™ , , ,. , inn
100
10
Cib v *' 9fb 9ob 9cib/'

'
(°) (mU) Cob

(") UiO)
(PF) Oi«) . (pF)
<»rb Cob
-10 100
= =
2 20 20 2 0.2
f
as 1 s 0.5 1 5 as 1 5 as i 5
'C (mA) IC (mA) 'C(mA) 'C(mA))
3.78.3100B
BF391 BF392 BF393
THE BF391, BP392, BF393 AHB RHT SIUCOH CASE TO-92A

plaiar nunistms desigud iob high
YOIffiGB YIDSO iMPLHTBS IH TELIYXSIOI
RJUlIVBtS. THBT TEATORE 200Y MDnHDM
COLLBCTQR-BHraB BREAKDOWT TOLTAGI 10
good raqoncT characteristics.
ABSOLUTE MAXDBW RATH03 HF391 BF392 BT393

Colleetor-Baae Toltage
cm tOOT 250T 3OOV
Colleotor-Ialtter Yoltaga
CKO 2O0T 250T 300V
Enitter-Baee Yoltace yEB0 6T ST 87
Collector Current
ICM 500nA
Total Powt Biaaipatioa • Tc*25°C Ptot 1.5W
• Ta< 25<»c 625rtf
Operating Junotion * Storage Temperature Tj A fstg -55 to 150°C
ELECTRICAL CHARACTERISTICS (*A-25°C unleaa otherwlae noted)

PARAMETER HT391 BT392 BT395
SYMBOL
Mnr«*x KIM MAX mi MAX
BUT TEST COXDITIOKS
Colleetor-Baee Breakdown Voltage BTCBO 200 250 300 IC-O.laA If-0
Collector-Emitter Breakdown Voltage LTCEO 200 250 300 T IC-laA Ib-0
Enitter-Beee Breakdown Voltage BT«BO 6 8 8 T IpO.laA lC-0
Collector Cutoff Currant ICBO 0.1
^ CB-I6OV Ig-0
0.1 0.1 ma TCB-200V Ij-0
Emitter Cutoff Current I«BO 0.1 M TD-4T IC-0
0.1 0.1 M VgB-oV Ic-0
Colleotor-Eaitter Saturation Voltage ci(aat) 2 2 2 T. IC-20BA IB-2«A
Baae-Ecitter Saturation Voltage BB(aat) 2 2 2 V IC-20PU I*>2mk
S.C. Currant Cain RR 25 25 25 IC"1«A VCI-lOV
40 40 40 IC-10aA VCE-lOV
Currant Qaln-Baadvidth Produet *T 50 50 50 MHs IC-lOaA VCE-20T
Peaffbaek Capaeitanoa Cra 2 2 2 P* VJC9-60V 11-0
f-lMHa |
—
BF391 BF392 BF393
TYPICAL CHARACTERISTICS (TA-25°C unless otherwise noted)
Ptot T8 ta SAFE OPERATIHG AREA (D.C.)

1000
1.5
V '
ptot V*
%. ic 100
ILk
(W) 1.0
\ («A) :5f^t
... ^S • ±tt
0.5 iJ V<8
10
-B^
\* 391-»
-*«i
*4*** w 392-
BJ 393-
50 100 150 200 10 30 100 300
TA (°C) VCE (V)
?FB ti ic BE(sat) & VcE(sat) vs Ic

200 10
I :| : ::£ IC-10IB
1
t
160
1
t
120 \4
HfB
f 1 VOLT
]
80 l rL
«a
1
:VSE( Bat)^ =a
UttM
j~ 1
0.3 lllli
40
PuIse Test
t 4
I tat)' '
llll flr 0.1
0.1 1 10 100 1000 0.1 1 10 100
IC (mA) IC («A)
Cre vs VCB
10 — IE-O
f-lM ts
Cre 3
0.3
0.1
100 10 30 100
VCB (V)
12.77.7300B
BF494 BF495
THE BF494. BP495 ARE NPN SILICON PLANAR CASE TO-92E

EPITAXIAL TRANSISTORS TOR RF SMALL SIGNAL
APPLICATIONS DP TO lOOMHz.
CBE
ABSOLUTE MAXIMUM RATINGS bj-494. BP495

Collector-Base Voltage vCBO 30V 30V
Eoiitter-Base Voltage 5V 5V
VEBO
Total Power Dissipation (Ta<75°C) Ptot 300mW
derate 4mW/0C above 75<>C
Operating Junction & Storage Temperature Tj, Tatg -55 to 150°C

BF494 BF495
Emitter-Base Breakdown Voltage bvebo 5 5 V lB-10uA Ic-0
Collector Cutoff Current ICBO 0.1 0.1 FA VCB-30V Ie-O
Collector Cutoff Current ICEO 1 1 VCE-20V Ib-O
P*
Collector-Emitter Saturation vCE(sat ) °' 1 0.1 V IC-10mA iB-lmA
Voltage
Base-Emitter Voltage VBE .65 .68 .74 .65 .68 .74 V IC-lmA VCE-10V
B.C. Current Gain hfe 67 115 220 36 67 125 IC-lmA VCE-lOV
Current Gain-Bandwidth Product fT 260 200 MHz IC-lmA VCE-lOV
Feedback Capacitance Cre .85 .85 PF IC-lmA VCE-lOV
f-450KHa
Noise Figure NF 4 dB
4 IC-lmA VcE"10V
RG-100a f-lOOMHz
Mixing Noise Figure NF C 2 dB IC-lmA VCE-lOV
HG-83CA f-lMHz
NFc 2.5 dB I C -1«A VCE-lOV
RG-670A f-lMHz
BF494 BF495
HP494 TYPICAL y-PARAMETERS AT TA.25<>C Ic-lmA TcE-lOV
f-450kHs «r
u -0.33BV |y12
|-2.8pv
|y21
|-36»u *22-^V
Common Emitter tijj^-O.OfiSmV -« -90° .0 -oo b -4.5^V
12 21 22
C -1.6pP
C
n -23pP 22
f-10.7MH«
|y12 |-6û y21 |-36mtr g22 -8.5^v
(
Common Emitter b -1.5mv -0 -90° °

n 12 -°21 -10 b
22
-0.11mU
C «22pP C -1.6pP
11 22
f-lOOMHs g11 -36mtr |y12

|«420p.ir
|y 21 |-33«v *22- 22/ U
Common Base - b -3mv -0 -880 -« -1460 b -l.l»xr
11 12 21 22
- C "4.8pP
u C
22
-l.75pP
BF495 TYPICAL y-*PARAMETERS AT TA-25°C Ic-lmA yCE-10V
|-2.6uV
f-450kH« « u -0.5mU |y12 |y 21
|-36«U g22 -2.7^v
Common Emitter b -e -900 -°°
u -0.1mTT 12 -°2
1
b
22
-4.5^V
C -32pP C -1.6pP
11 22
f-10.7MHs gj.-0.6mV -6c>xT

|y 21
|-36mv g2 2-4.5Û
|y12|
Common Emitter b^-ant; -0 -900 °
12 "°21 - 10 b
22
-0.UmU
Cj
a -30p? C
22
-1.6pP
f-100MH» gu -38mV |y12| -4iopv |y21

|-34»V g22 -i^xr
Common Baae b 22 -l.lmv
- b
u -lmu "°12 -85° -0
21
-140°
- C -1.75pP
n
C -1.6pP 22
HpE ve Ic
HPE
(MHz)
100 0.1 1 10 100

XC (mA)
2.78.330OA
CL055 CL066
COMPLEMENTARY SILICON PLANAR LOW VCEK TRANSISTORS
CASE TO-92A X-67 Heat Sink

THE CL055 (FNP) AND CL066 (HFN) ARE SILICON
PLANAR EPITAXIAL COMPLEMENTARY PAIR SPECIALLY
DESIGNED FOR 1-WATT AUDIO AMPLIFIER OUTPUT
AND SWITCHING APPLICATIONS. THEY FEATURE LOW
I l°l
COLLECTOR-EMITTER DEE VOLTAGE AND GOOD LINE- J"
ARITY OP D.C. CURRENT GAIN.
EBC
ABSOLUTE MAXIMUM RATINGS w«l«
Fof|>^d«rlc»,wltigt >ndcunwit,«lii««»n
Collector-Base Voltage VcBO 25V

Collector-Emitter Voltage VcEO 20V
Emitter-Base Voltage VebO 5V
Collector Current Iq 1A
Colleotor Peak Current (t^5C*S) ICM 1.5A
Total Power Dissipation « Tc*25°C Ptot 1.5W
With X-67 Heat Sink Ta^^C SOOmW
Without Heat Sink « *A*25°C 625mW
Collector-Base Breakdown Voltage BVcBO 25 V IC-100uA lE-0
Collector-Emitter Breakdown Voltage LVcEO * 20 V IC-10mA IB-O
Collector-Emitter Cutoff Current ices 0.5
^ VCE-20V VBE-0
Emitter-Base Cutoff Current IEBO 1.0
^ VEB-5V Ic-O
Colleotor-Emitter Knee Voltage VCEK 0.25 0.5 V IC-0.2A IB-value
at which Ic-0.22A
Vce-IV
Collector-Emitter Saturation Voltage VCE(sat)* 0.21 0.4 V IC-0.5A IB-0.05A
Base-Emitter Voltage be * 0.87 1.2 V IC-0.5A VCE-IV
D.C. Current Gain (Note) HPE 1 * 50 160 360 IC-0.1A VCE-IV
HpE 2 * 20 80 IC-lA VCE-2V
Note 1 HpE 1 i> classified as follows. Group A t 50-100 Group B 1 80-160
Group C t 120-240 Group S 1 180- 56O
• Pulse Test t Pulse wldth-0.3mS, Duty Cycle-1^
CL055 CL066
(TA-25°C unless otherwise noted)
TOTAL POWER DISSIPATION V BE ANDV CE (s«)

vsAMBIENT TEMPERATURE vs COLLECTOR CURRENT
111 Mill
J Hi Poise Test
J III
J
\s
^ \ 1 >>.o
1
i& CE
-1V
v
s^*
%2 ^ f &! ^ V CE tsat)»lc-iu
ill
B,
1 HI
40 80 120 160 100
TA l (mA»
(°C) c
D.C. CURRENT GAIN CURRENT GAIN - BANDWIDTH PRODUCT

vs COLLECTOR CURRENT vs COLLECTOR CURRENT
11
1 II
mi v c E -1V III (MHz) II I
66
lllllr Hi v c E" 10V
ISO — sf
C\-° Pals e Te St
120
ô- 06» <

V I
II
1 I
100 100 1000

l-(mA)
1.78.0850C.8JOOC
CL138
NPN SILICON PHOTO DARLINGTON TRANSISTOR
CASE TO-106
THE CL138 IS AN NPN SILICON PHOTO
DARLINGTON TRANSISTOR FOR USE IN
PHOTO DETECTOR CIRCUITS IN WHICH
VERY SENSITIVE LIGHT CURRENT IS
REQUIRED. THE DEVICE IS SUPPLIED
IN SELECTED LIGHT CURRENT GROUPS.
Note t The base terminal may be

isolated from the internal
silicon chip upon request.

Collector-Emitter Voltage Vceo 18V
Emitter-Collector Voltage VECO 5V
Total Power Dissipation 6 Ta^25°C Ptot 300mW
Operating Junction & Storage Temperature Tji T st g -55 to 100°C
ELECTRICAL CHARACTERISTICS (Ta«25°C unless otherwise noted)

PARAMETER SYMBOL MIN TYP MAX UKIT TEST CONDITIONS
Collector-Emitter Breakdown Voltage LVCEO* 18 35 V IC-10mA (Pulsed)
lB-0
Emitter-Collector Breakdown Voltage BVeco* 5 8.5 V Ig-O.lmA IB»0
Collector Cutoff Current ICEO * 1

(-Dark Current) PA VCE-5V IB-O
Light Current IL ** 15 80 mA VCE-3V H-2mW/cm2

Group A 15 25 40 mA VCE-3T H-2mw/cm2
Group B 30 50 80 mA VCE-3V H-2mW/cm2
* Tested in complete darkness.
** The light current is the collector to emitter current measured at specified

irradiance (H). The radiation source is an unfiltered tungsten filament
lamp at 2874°K color temperature.
CL138
TYPICAL CHARACTERISTICS AT Ta-25<>C
LIGHT CURRENT
SWITCHING TIME vs CQLLBCTORJ'WIT'nBl TOLTAGB
lOO j % +.1
VCC-410T
jlL-laA
H=s
GaAs
*^s,
^-q
Red LKD ° OUTPUT
f
Source >.
£lK-ohma
1
Turn-On Time-500uS
Light Souroe ia an unfiltered
Turn-Wf Time«150uS tungsten filament lamp at
2854°K oolor temperature*
I I I I I I I
5 10 15 20
VCE (V)
SPECTRAL RESPONSE
RELATIVE RESPONSE vs INCIDENT ANCLE
\ ,f -s
\ / s
\
^
1
A
'
,
\
^
<
\ /
\
\ 2 1 s
\ N
\
V
/ 1
A
/ I
V
WAVELENGTH-MICRONS I- MCKSNT ANGLE-DEGREES
3.78.4543
CL155 CL166
COMPLEMENTARY SILICON PLANAR LOW VCEK TRANSISTORS
THE CU55 (PHP) AMD CU66 (HPH) ARK SILICOH

PLAHAR EPITAXIAL COMPLEMBHTARY PAIR SPECIALLY TO-92A X-67 HEAT SINK
DESIGHBD FOR 2-VATT AUDIO AMPLIFIER OUTPUT
AMD SWITCHING APPLICATIOMS. TBET FEATURE LOW
COLLECTOR-EMITTER KMEE VOLTAGE AMD GOOD
LINEARITY OF D.C. CURRENT CAIM.
A...
ABSOLUTE MAXIMUM RATIM03 «. M •—.-»-.« EBC
Collector-Base Voltage ¥ CB0 30V
Collector-Emitter Voltage CEO 25V
Emitter-Base Voltage Vkbo 5V
Collector Peak Current (t450mS) 1CM 2.2A
rotal Power Dissipation •
Tc«25°C Ptot 1.5W
With X-67 Heat Sink • Ta<25°C BOCaM
Without Heat Sink TA«25°C 625*W
Operating Junction & Storage Temperature Tj. Tstg -55 to 150<>C
PARAMETER SYMBOL MIM TYP MAX UHIT TEST COMDITIOHS

Collector-Base Breakdown Voltage BVcbo 30 V IC-100uA Ig-0
Collector-Emitter Breakdown Voltage LVceo • 25 V IC-10mA Ib-0
Collector Cutoff Current IQES 0.5 ^ VCE-20V VBE-0
Emitter Cutoff Current lEBO 1.0 J* VEB-5V Ic-0
Collector-Emitter Knee Voltage CEK 0.2 0.4 V IC-0.2A IB-value
at which Ic-0.22A
VCE-1V
Collector-Emitter Saturation Voltage VcE(sat) * 0.25 0.45 V IC-1A Ib-O.IA
Base-Emitter Voltage VBE* 0.82 1.2 V IC-0.5A Vce-IV
D.C. Current Gain (Mote) hfe i * 50 160 360 IC-0.1A Vce-IV

HFE 2 * 30 110 IC-1A VCB-2V
Current Gain-Bandwidth Product fT 120 MHz IC-50BA Vcb-IOV
Mote i HFE 1 is classified as follows. Group A i 50-100 Group B t 80-160
Group C i 120-240 Group D i 180-360
» Pulse Test « Pulse Width-0.3"S. Duty Cycle-Wf
«
CL155 CL166
<TA -25°C UNLESS OTHERWISE NOTED)
TOTAL POWER DISSIPATION V BE AND VCE (sat)

vs AMBIENT TEMPERATURE
vs COLLECTOR CURRENT
111
I I mil
\x V'fl
^ V x& '-f £SrH

CE • ivj
<>
^H ^ 5*s£
V C6 (sat) MC -ioi B
I
llli
40 80 120 160 100
TA (°C) l-(mA)

III
v c E" 10V
100 1000
l-(mA)
1.78.0810C.8100C
CL055 CL066 CL155 CL166
APPLICATION NOTE (MEAP168)
LOW VOLTAGE OTL AUDIO AMPLIFIER <hl-4~8*>
10/iF
All resistances are in ohms. Quiescent current

is very stable when Q3 is placed close to Q2.
CIRCUIT DETAILS SUPPLY VOLTAGE (RL=8 .ohms) SUPPLY VOLTAGE (RL=4ohmsl

12V 9V 7.5V 6V 4.5V 9V 7.5V 6v 4.5V
R1 56K 47K 39K 33K 27K 56K 39K 33K 27K
R2 2.2K 2.2K 2.2K 2.4K 3K 2.7K 2.4K 2.4K 3K
R3 390 390 330 220 120 270 270 220 120
R4 1 1 1 .
R5 560 470 470 470 470 510 510 470 470

Q1 ,HPE group C or D CL166 CL066 CL066 GLO'66 CL066 CL166 CL166 CL066 CL066
Q2,HPE group C or D CL155 CL055 CL055 CL055 CL055 CL155 CL155 CL055 CL055
10# THD Output « 2W 1.1W 0.75W 0.5W 0.23W *1.9W *1 . 5W 0.9W 0.4W
Input Impedance 55K 55K 53K 50K 47K 53K 50K 47K 45K
Input Sensitivity 43mV 34mV 27mV 23mV 16mV 35mV 28mV 24mV 16mV
THD © 0.5W Output 0.5* 0.6# 1* 109& — 0.5# 0.7# H
Frequency Response 42Hz to 38KHz, -3dB 70Hz to 38KHz, -3dB
Current Drain
© no signal 14mA 13mA 13mA 13mA 13mA 16mA 15mA 14mA 14mA
© 10# THD output 230mA 170mA 140mA 120mA 72mA 290mA 255mA 210mA 145mA
Output transistors mounted to X-67 heat sink.
CL055 CL066 CL155 CL166
USING X-87 HEAT SINK TO ITS FULL ADVANTAGES
The X-67 heat sink is specially designed for the low Vêk transistors to perform two functions.
1. Permits 2-Watts continuous output power in the amplifier circuit shown in last page.
2. Provides excellent stability of quiescent current when the biasing transistor (Q3) shares
common heat sink with the PNP output transistor (02). The arrangement is shown in the
following diagram.
<> X-87 Heat Sink
1 — ir
ii
-
ii
l ii_.
Biasing Transistor (Q3)
PNP Output Transistor 102).

CL855 CL866
THE CL855 (PHP) AMD CL866 (NPN) ARE SILICON CASE TO-92A X-67 HEAT SINK
PLANAR EPITAXIAL TRANSISTORS OP COMPLEMENTARY
CHARACTERISTICS. THEY ARE DESIGNED' TOR USE
IN AF LARGE SIGNAL AMPLIFIERS AND MEDIUM SPEED
SWITCHING UP TO 1.5A PEAK CURRENT.
EBC
a-
ABSOLUTE MAXIMUM RATINGS For <»*>*>*»•. mo* .«icun»m»k»>
Coll actor-Base Vol tag* Vcbo 70V
Collector-Emitter Voltage VcBO 60V
Collector Peak Current (t**5CaS) lCM 1.5A
Total Power Dissipation Tc^25°C Ptot 1.5V
With X-67 Heat Sink Ta<25°C BOOmW
No Heat Sink Ta<25«>C 625mW
Operating Junotion & Storage Temperature TJ» *stg -55 to 150°C

Collector-Base Breakdown Voltage BVcBO 70 V IC-100uA Ib-0
Collector-Emitter Breakdown Voltage LVcBO * 60 V IC-10mA IB-0
Collector Cutoff Current ices 0.5 VCE-50V VBE-0
J*
Emitter Cutoff Current lEBO 1 VEB-5T IC-0
P*
Collector-Emitter Knee Voltage CEK 0.45, V lC«0.2A,lB-value
at which IC-0.22A
VCE-1V
Colleotor-Emitter Saturation Voltage VCE(sat)* 0.23 0.5 V IC-0.5A IB-0.05A
Base-Emitter Voltage be • 0.85 1.2 V IC-0.5A VCE-2V
D.C. Current Gain (Note) 50 120 240 IC-0.1A VCE-2V
HPE 2* 20 55 IC-1A VCB-4V
Current Gain-Bandwidth Product fT 50 150 MHi IC-50mA VCE-10V
Collector-Base Capacitance Cob 15 25 pF VCB-10V Iu-0
f-lMHS
• Pulse Test t Pulse Vidth-0.3mfl, Duty Cyole-1^
Note i HFE 1 ! classified as follows. Group A I 50-100 Group B i 80-160 Group C i 120-240
CL855 CL866
TYPICAL CHARACTERISTICS (TA - 25°C UNLESS OTHERWISE SPECIFIED)
TOTAL POWER DISSIPATION BP AND VCE<

V'BE rp (sat)
vs AMBIENT TEMPERATURE vs COLLECTOR CURRENT
1 HUM Hill
J III
pulse
]
J llll
J
\s 1
i& CE
-JV
^ \
^^
^H°*tRT
1 • v*..,
•>*
V CE (sat) # IC - iu B
/
/
80
r 120
mini I HHffl
100
III
TA (°C)
l
c (mA)

I
ii 'T
1
1
MM HI r ce (MHz)
VCE TOT
|
pul se t est
^ Oi
^T II
II
\
51
111 || ill
100
l
r (mA) l
c (mA)
2.78.0810B.810OB
CX PRODUCT LINE
DISCRETE SILICON TRANSISTORS
FOR PORTABLE B & W TV RECEIVERS
V *wp BLOCK DIAGRAM
I.C.. - INTEGRATED CIRCUIT

* - PNP COUNTERPART
IN-
CL166
CL155
CX PRODUCT LINE
>l
M
2
>
O Q O
ir\ ir>
t\i
iH r* r-t
O • «
U"
vo
r-4
o
CM
< pa
O O oo oo o o o
PS o££&
o o
sg
CX701 CX701A
NPN SILICON TRANSISTORS
FOR TV VERTICAL OUTPUT APPLICATIONS
CASE T0-22OB
THE! CX701 ART) CX701A ARE HP1C SILICON POWER
TRARSISTORS RECOMMENDED POR THE VERTICAL
OUTPUT STAGES OF 5" -12" B * W TELEVISION
RECEIVERS.
ABSOLUTE MAXIMUM RATINGS CX7Q1 CX7Q1A

Collector-Base Voltage Vjjbo 150V 180V
Colleotor-Baitter Voltage Vcbo 120V 150V
Baitter-Baae Voltage VgBO 5V
Colleoter Currant IC 2A
Collector Peak Current (t ^lOaS) Icm 4A
Total Power Dissipation (Tc*25©c) Ptot 25W
(Ta<25°C) 1.5*
Operating Junotion * Storage Tenperature Tj, Ta tg -55 to 150°C
«701 CX701A
PARAMETER SYMBOL Mil MAX MOT MAX UNIT TEST CONDITIONS
Colleotor-Baitter Breakdown LVcEO • 120 150 V IC-10QaA Ib-0
Voltage
Collector Cutoff Current ICBO 10 10 ^ Vcb-IOOV Ib-0

knitter Cutoff Current IEBO 10 10 ^ eb-5v ic-o
Colleotor-Baitter Saturation
CE(sat)* 1 1 V IC-1A Ib-O.IA
Voltage
Base-Baitter Voltage Vbe • 0.6 0.85 0.6 0.85 V IC-0.2A VCE-5V
B.C. Current Gain HPB* 30 120 30 120 IC-0.5A VCE-5V
• Pulae Teat 1 Pulae Vidth-0.3aS, Duty Cyole-1*

CX701 CX701A
TA-25°C unless othorviso noted)

(
p vs SAFE OPERATING AREA (l).C.)

tot *A
50 :ÊTc-25°C
^ siir
40
1 Is
'tot
^ =
W)
30
— !5 3>~k:
V^
^
j
20 &V (A)
k *f>
0.1
;cx70i—
>b* CX701A —
Stv
p» 0.01 1 INI [ I
10 30 100 300 1000
100 200
t VCK(V)
a(°c)
HTE vs Ic
YCE(s»t) * VBE ™h
80
1
70
60 ||||
H?E 50 II
VOW
40
50
1
20
10 vp i-S rjjj
Pa Lse Test
1 llllll
0.01 0.1 10
J
C (A)
3.78.8700P
CX702 CX702A
FOR TV HORIZONTAL OUTPUT APPLICATIONS
CASE TO-220B
THE CX702, CX702A ARE NPN SILICON POWER
TRANSISTORS RECOMMENDED FOR THE HORIZONTAL
OUTPUT STAGES OP 5" —
12" B * W TELEVISION
RECEIVERS.
BCE
ABSOLUTE MAXIMUM RATINGS CX702 CX702A

Collector-Base Voltage VCB0 160V 200V
Collector-Emitter Voltage (Vbe-O) Vqes 160V 200V
Collector-Emitter Voltage (Ib-O) Vceo 80V 100V
Emitter-Base Voltage VggQ 8V
Collector Current Ic 5A
Collector Peak Current (t «10mS) igjj 8A
Total Power Dissipation (Tc<25°C) Ptot 40V
ELECTRICAL CHARACTERISTICS (Ta-25°C unles £ otherwise noted)

PARAMETER CX702 CX702A
MIN MAX MIN MAX
Collector-Emitter Breakdown LVCE g • 160 200 V IC-100mA VBE-0
Voltage
Collector-Emitter Breakdown 60 100 V

I-V
CE o « IC-100mA lB-0
Voltage
Collector Cutoff Current I CES 100 100 »A VCE-100V Vbe-0
Emitter Cutoff Current 10 10
lEBO rk Veb-BV Ic-O
Collector-Emitter Saturation 7CE(sat) * 2 2 V IC-4A IB-0.8A
Voltage
Base-Emitter Voltage Vbe * 2 2 V IC-4A Vce-5V

D.C. Current Gain HFE * 15 70 15 70 IC-4A VCE-5V
Fall Time tf 1 1 »s IC-4A lBi.-0.8A
-VBB-5V RB-5il
• Pulse Test t Pulse Width-0.3mS, Duty Cycle-1#
1 —-
CX702 CX702A
TA-25°C unless stlwrviss noted)

(
P vs T SAFE OPERATIHG AREA

to< «
50 10 :: Tc-25°C ;
>
40 1*
r
tot Sk ic
V) b r
(w)
^ (A) 1
20
k**
CX702—
\< 0.3 CX702A
in
h H 1
0.1
100 200 10 JO 100 300
t
a(°c)
V
CB(V)
JC
VCER vs Rbe
°PE vs
eo 400
p» ilse Test 1 P ulse Test
1
70 III 1
Ir.«l(Yw.i
60 300 J llll
,
> \\\i
•1 yCER _CX7 02A
Hyg 50
'
(v)
40 \k
^ 200 cx7<32 T niP'
30 \ H . P
20
i 100 1
10
1 u
1
llll in
0.01 0.1 10 IK 1(X
X RBE
C (A) (£1)
3.78.8500P
CX703 CX703A CX703B
NPN SILICON VIDEO AMPLIFIERS & HIGH VOLTAGE SWITCHES
THE CX703, CX705A, CX703B ARE RPR SILICON

PLANAR TRAHSISTORS RECOMMBHDED FOR TV T0-92A X-67 HEAT SINK
7IDB0 OUTPUT STAGES AND HIGH VOLTAGE
SWITCHES UP TO 100mA COLLECTOR CURRBHT.
THET ARE SUPPLIED IN TO-92A PLASTIC CASE
WITH OPTIONAL X-67 HEAT SINK.
EBC
ABSOLUTE MAXIMUM RATUGS CX7Q3 CX703A CX703B
Collector-Emitter Voltage VCBO 160V 200T 250V
Total Power Dissipation • Tc «25°C ptot 1.5W
With X-67 Heat Sink , Ta^25°C 800aW
Ho Heat Sink, TA^25<>C 625mW
Operating Junction & Storage Temperature Tj. T8t g -55 to 150<>C
ELECTRICAL CHARACTERISTICS (?A •25°C unless otherwise noted)

CX703 CX703A (CX703B
PARAMETER SYMBOL MIH MAX MIR MAX MIH MAX DRIT TEST CONDITIONS
Collector-Base Breakdown 160 200 250 V
B^CBO IC-O.lmA Ie-0
Voltage
Collector-Emitter Breakdown I^CEO 160 200 250 V IC-laA Ib-0

Voltage
Emitter-Base Breakdown Voltage BVebo 6 6 6 V lB-0.1«A Ic-0

Collector Cutoff Current ICBO 0.1 VCB-120V Iw-0
Emitter Cutoff Current

0.1 0.1 a CB-150V I&Q
IEBO 0.1 0.1 0.1 "A EB-4V IC"0
Collector-Knitter Saturation CE(sat) 1.5 1.5 1.5 V I C -20aA I B -2mA
Voltage
Base-Emitter Saturation Voltage BE(sat). 1.2 1.2 1.2 V IC-20BA lB-2mA

B.C. Current Gain HFE 40 200 40 200 40 200 IC-10mA Vce-IOV
Current Gain-Bandwidth Product fT 50 50 50 MHz IC-10mA VCE-20V
Feedback Capacitance Cre 3 PF VCB-30V Ij-0
3 3
....
f-lMHs
CX703 CX703A CX703B
TTPICAL CHARACTERISTICS (Ta-2V>c unleaa otherwise noted)
Ptot T8 *A SAFE OPERATING AREA (B.C.)
50 100 150 200 j 10 30 100 300

TA (OC) ce (y)
HfE vs Ic VBE(sat) * VcE(sat) vs Ic

10
IC-10IB j
pul se test]
VOW
EV]3E(s
niir
0.3 1
vc S(b
0.1 fS-
0.1 1 10 100 1000 0.1 1 10 100
IC (mA) IC («A)
fT ic Cre vs Vcb
100 10
VCE-20V :lE«0
f -1MH*'
eo c re
::;^^:::z 3
fT
60
>;_... \ (PF)
i 1
(MB*)40
0.3
20
0.1
10 100 3 10 30 100
ic(«A) CB (V)
12.77.7300B
CX704 CX754
COMPLEMENTARY SILICON EPIBASE AF POWER TRANSISTORS
THE CX704 (RPR) AHD CX754 (PHP) ABE CASE TO-220B

COMPLEMENTARY SILICON EPIBASE TRANSISTORS
RECOMMENDED TOR MEDIUM POWER APPLICATIOHS
SUCH A3
• POWER REGULATOR IN PORTABLE TV
•10W OTL AUDIO AMPLIFIER

* MEDIUM SPEED SWITCH UP TO 4A
ABSOLUTE MAXIMUM RATINGS *.~.—.-»—

Collector-Ealtter Voltage (RbE-IOO/I ) CER 60V
Collector-Emitter Voltage (Ij-O) ceo 50V
Baltter-Baae Voltage VEBO 5V
Collector Peak Current (t <10aS) ICM 7A
Total Power Dissipation (Tc<25©c) *tot 50W
Operating Junction A Storage Temperature Tjt T8 tg -55 to 150°C
THERMAL RESISTAHCE
Junction to Case 8 dc 4.17°C/W

PARAMETER SYMBOL na TYP MAX UNIT TEST CONDITIONS
Collector-Snitter Breakdown Voltage LVcER * 60 V IC-10C*A RBE-lOQa
Collector-Emitter Breakdown Voltage LVceo * 50 V IC-IOObA Ib-0
Collector Cutoff Current ICER 1 H* VCE-30V Rbb-IOOA
Emitter Cutoff Current lEBO 1 M VEB-5V Ic-0
Collector-Emitter Saturation Voltage CE(sat)* 0.35 1 V IC-2A IB-0.2A
Base-Emitter Voltage VBE * 1 1.5 V IC-2A VCE-2V
D.C. Current Gain (Rote) HIE 1 * 40 100 240 IC-1A VCE-2V
HFK 2 * 30 90 IC-10mA VCE-2V
Current Gain-Bandwidth Product fT 3 MHz IC-0.2A VCE-5V
• Pulse Test < Pulse Width-0.3*S, Duty Cycle-ljf

Note i HpB 1 is classified as follows. Group A • 40-80 Group B i 70-140
Group C i 120-240
.
CX704 CX754
(
TA-25°C ualoaa othorvioo noted)
P. . vs T. SAFE OPERATING AREA (l).C.)

tot A
— 10
=TC-25°C
3
r
tot ic
(W) A
s& (A) 1
hlb >
0.3
r& f
0.1
100 200 X 3 10 30 100
t
a(°c)
Tc*(y)
160
ic
VCE(aat) k VBE * J
C
140 111
III
120
HyglOO J|
80
60
!
40
Ill
20
Pilit • T< ist
J]
0.01 0.1 10
x
c U)
1.78.8700B.0870B
CX705 CX705A
CASE TO-3
thecx705 and cx705a are npn silicon single
dutused mesa power transistors recommended
tor power regulators, audio amplifiers ard
low speed switches requiring vert large sate
operating area.
ABSOLUTE MAXIMUM RATINGS CX7Q5 CX705A

Colleotor-Eaitter Voltage (RBE-100.0.) 55V
VCER 70T
Collector-Brttter Voltage (Ib-O) 45V 60V
VCEO
Eaitter-Baae Voltage 7V
TjfflO
Collector Current
ic 7A
Total Power Dissipation (Tp 425«C)
Ptot 75W
Operating Junction & Storage Temperature Tjt Tstg -55 to 175°C
THERMAL RESISTANCE
Junction to Case
2©C/W
TA-25°C unless otherwise noted) J
CX705 CX705A
MIR MAX MIN MAX
Collector-Saitter Breakdown Voltage LVcbr * 55 70 V IC-0.2A RBE-lOOa
Coll ec tor- Eaitter Breakdown Voltage 1VCB0 * 45 60 V IC-0.2A IB-O
Eaitter-Baae Breakdown Voltage BVbbO 7 7 V lE~5mA Ic-0
Collector Cutoff Current ICEO 1 1 A VCE-30V IB-O
Collector Cutoff Current ICRR 0.2 0.2 A VCE-50V RBE~10Qn
Collector-Emitter Saturation Voltage vCE(sat)« 1.2 1.2 V IC-3A IB-0.3A
Base-Baitter Voltage be • i.e 1.8 V IC-3A IB-0.3A
D.C. Currant Gain Rra * 20 70 20 70 IC-3A VCB-4V
5 5 IC-7A VCB-4V
Current Gain-Bandwidth Product fT 0.5 0.5 MHz IC-0.5A VCE-1CV
• Pulae Teat i Pulae Width-0.3«S, Duty Cycle-l£
. — 1
CX705 CX705A
(*A-25°C unloaa otbaxviaa noted).
P *» T SAFE OPERATING AREA (l).C.)

tot A 10
100 :fii== =Tc-25«>c
80 T
3
p ic
tot
60
00 * l*> (A) 1 hi
>
40 [^ cro5—
1*V 0.3
_.C)705A —
20 \£ III
k II
0.1
100 200 10 30 100
t VCB(V)
a(°c)
VCE(sat) & VBE TS ^c

c
ic
80 1.6
I Ul( e t est
1 1.4
II
70
60
1 II 1
Hra 50 (Volt)
111 l/ll
40 0.8 VBE
30 0.6 • VCE-4V
1
20 0.4
V
1
10 Vce-."Hit 0.2 CE(s ft t^ll llj
ic- 10 x s
Puis e Te it a
||
III
0.01 0.1 1 10 0.01 0.1 1 10
X X
C (A) C<A)
1.78.MB/MD
CX901
NPN SILICON GENERAL PURPOSE AMPLIFIER AND ZENER DIODE
CASE TO-92A
TBI CX901 IS BPB SILICON PLANAR EPITAXIAL
TRANSISTOR POR GENERAL PURPOSE SHALL SIGNAL
APPLICATIOES ROM B.C. TO PREOJJENCIES BEYOND
lOMRs. ITS EMITTER-BASE JUNCTION CAR ALSO
BE USED AS A 7-VOLT ZERER DIODE.
BBC
ABSOLUTE MAXIHOW RATIBGS

Collector-Base Voltage vCBO 45V
Colleetor-Eaitter Voltage CEO 40V
Total Power Dissipation (Ta*25°C) ptpt JOOjbW
Operating Junction & Storage Temperature *j. *Stg -55 to 150oc

PARAMETER SYMBOL MIR TIP MAX UHIT TEST CONDITIONS
Collector-Base Breakdown VCltage BVcbo 45 V I c -0.1mA Ib-0
Collector-Emitter Breakdown Voltage LVCBO 40 V I c -lmA Ib-0
Emitter-Base Breakdown Voltage BVjbo 6.7 7.2 7.7 V lE-5»A I c -0
7.4 V lE-25mA Ic-0 *
Collector Cutoff Current Icbo 100 nA VCB-30V Ib-0
Emitter Cutoff Current iebo 100 nA VEB-3V Ic-0
Colleetor<-Emitter Saturation Voltage CE(sat) 0.15 0.4 V IC-50mA lB-5mA
Base-Emitter Voltage be 0.62 0.8 V I c -lmA Vce-5V
B.C. Current Gain Hra 40 70 150 I c -lmA Vce-5V
30 55 IC-O.lmA VCE -5V
Current Gain-Bandwidth Product fT 80 140 MHs I C -1»A VCE-5V
Collector-Base Capacitance Cob 2.7 3.5 pP VcB-lOV Ig-0
f-lMHs
Collector-Base Time Constant CorhV 60 150 PS Ic-lmA VCE-5V
f-31.8MHs
* Maximum operating emitter current is 30mA when the emitter-base Junction is used
as a sener diode (collector open).
CX901
TYPICAL OUBACTBRISTICS
(Ta-25°C unltaa otnarviaa noted)
Hpg • Ic VBE * VcE("t) y* *C
8C
70 IILU "1 S
III
*n
ST
4C
K
20
10 5T|i—
10 100 100
0.1 1
*T ra IC
400
II Tl TD
|l|
Ml
VCI-5T
IC-0
300
is
*T
(A)
(Mb)
100
fc 1 10 100 5 10
IC (-A) V»B (V)
1.78.4300A
CX904 CX954
COMPLEMENTARY SILICON GENERAL PURPOSE AF AMPLIFIERS
CASE TO-92A
TBS CX904 (RPR) ARB CX9f * (PRP) ARB
COWLKMHITARY SILICON PLANAR EPITAXIAL
TRANSISTORS RECOMMENDED fOR TV SMALL
SIGNAL PROCESSING CIRCUITS SUCH AS
• STNC. SEPARATOR
• HORIZONTAL OSCILLATOR
EBC
• KRROS AMPLIFIER
• AUDIO DRIVER
ABSOLUTE MAXIMUM RATIUCS '«H<M>,«wMa

Collector-Base Voltsge CBO 45V
Collector-Ealtter Voltage VCBO 40V
Eeltter-Baae Voltage VbbO 5V
Collector Current ic lOOnA

Total Power Dissipation (TA 425°C) Ptot JOOmW
Operating Junction & Storage Temperature Tj, T 8 tg -55 to 150OC

PARAMETER SYMBOL MIR TYP MAX UNIT TEST CORDITIOHS
Collector-Base Breakdown Voltage BVcBO 45 V IC-O.lnA IE-O
Collector-Eel tter Breakdown Voltage LVcbq 40 V IC-loA IB-O
Collector Cutoff Current JCBO 100 nA VCB-30V Ib-O
sitter Cutoff Current IRBO 100 nA VEB-4V IC-O
Oolleotor-Esltter Saturation Voltage CE(sat) 0.14 0.4 V I C -50«U Ib-5«A
Base-Ssltter Voltage be 0.65 0.8 V IC-5»A VCE-5V

D.C. Current Gain (Rote) Hfe 1 80 260 540 I<;-5«A Vcb-5V
HFE 2 50 200 I C -0.1«A VCE-5V
Current Gain-Bandwidth Product fT 80 200 MHs I C -1C«A VCE-lOV
Collector-Base Capacitance Cob 5 5 PF VcB"10V Ie-0

f-lMHs
Boise Figure HF 2 dB I C -0.1mA Vcb-5V

RQ-lOKn
f-30Hs - 15KHs
Rote t HFE 1 *• classified as follows. Group B 1 60-160 Group C 1 120-240

Group D 1 180-360 Group E i 270-540
1
CX904 CX954
(Ta-25°C unless otherwise noted)
HFE v» Ic Vbe * vCE(sat) vs I

c
400 I
- '
1.6
1
i
ill! Hill
1 1
1.4 1 1 IHIIIl
III '
'
pul se test
n 3 °° 1
1.2
FE
tt 1
(Volt)
I -» 0.8 be
III
ml
• VCE»5V
0.6
100
0.4
III
T
7f ->V
0.2
vCE(sat)
Piill se '.
est Ic-IOIb :
II
—Ml lllll lt
0.1 1 10 100 0.1 100
IC (mA) J C («A)
fT ic
400 Cob vs VcB
V( !E -10V 10
Ill
Hill!
1!
-IE-O
300 II 6
1
Cob 6
(MHz) ^ (PF)
100
'ffl 1 4 ,1'*90i
,CX0<s
|
I
III i
0.1 1 10 100 5 10
IC (mA) VCB (V)
1.78.4300B.0430B
CX906 CX956
COMPLEMENTARY
SILICON AF MEDIUM POWER AMPLIFIERS & DRIVERS

THE CX906 (NPN) AND CX956 (PNP) ARE
TRANSISTORS RECOMMENDED POR MEDIUM POWER
APPLICATIONS SUCH AS
• TV VERTICAL OSCILLATOR
• POWER REGULATOR DRIVER EBC

» MEDIUM SPEED SWITCH UP TO 500«A
• OTL AP AMPLIPIER UP TO 500mW
ABSOLUTE MAXIMUM RATINGS for («*<»»*«,. wing, and a it valuel an negative
Collector-Base Voltage VCBO 45V
Emitter-Base Voltage TEBO 5V

P. 1.2W
Total Power Dissipation • Tc ^25°C
.
With X-67 Heat Sink 9 Ta 425°C 700mW
No Heat Sink • TA 425°C 500mW
Operating Junction & Storage Temperature *j, T etg -55 to 150°C
ELECTRICAL CHARACTERISTICS ( TA-25°C unless otherwise noted)

Collector-Base Breakdown Voltage B^CBO 45 V IC-O.lmA Ie-0
Collector-Emitter Breakdown Voltage ' LVCEO * 40 V IC-10mA Ib-0

Collector-Cutoff Current ICBO 100 nA VCB-30V IE-O
Emitter Cutoff Current IrBO 100 nA Vbb-4^ IC"°

Collector-Emitter Saturation Voltage CE(sat)* 0.25 0.5 V IC-250mA Ib-25mA
Base-Emitter Saturation Voltage vBE(8at)r 0.94 1.2 V I c -250mA Ib-25»A
D.C. Current Gain (Note) RpE 1 * 50 160 360 IC-50mA VCE-1V

%-E 2 * 50 100 I C -250jbA Vce-2V
Current Gain-Bandwidth Product fT 80 200 MHz IC-50mA Vce-IOV
Collector-Base Capacitance CX906 Cob 4 8 PP VCB-10V Ie-0

CX956 5 8 PP f-lMHs
Note i HPE 1 i" classified as follows. Group A 50-100 Group B t 80-160

Group C 120-240 Group D t 180-360
* Pulse Test t Pulse Width-O.JmS, Duty Cycle-1^
CX906 CX956
TYPICAL CHARACTBBISTICS
(Ta-25«C unless othsrwis* noted)
BK(sat) «. CE(aat) ys Ic
Ptot ys *A
2.0
(*) ^8
1.0 With
X*fc
jr
STS&
$8^Sti
|
100 200 10 100 1000

TA (oc) IC (mk)
HPB ic *T r. I C
200 200
II
II
150 sSfc= :;JJ y

150
n
u 5f fl
Jj
II
(MHs)lOO
II 1 -r-r 1
50 li 1
50 li
\
11
Puis* Tsst VCE>•iov|
III
10 100 1000 °1 1 10O 10c
IC {mk) IC (-A)
1.78.6500B.0650B
CX908 CX958
COMPLEMENTARY
SILICON AF MEDIUM POWER AMPLIFIERS & DRIVERS

THE CX908 (HPH) MO CX958 (PHP) ARE
TRANSISTORS RECOMMHTOED POR MEDIUM
POWER APPLICATIONS SUCH AS
• TT HORIZONTAL DRITBR
* POWER REGULATOR DRIVER
• MEDIUM SPEED SWITCH UP TO 1A

* OTL AF AMPLIFIER UP TO 1W
ABSOLUTE MAXIMDM RATINGS i=oriMn><i.*».voiu».n
Collector-Base Voltage CBO 45V
Collector-Emitter Voltage CEO 40T

Bsitter-Base Voltage VEBO 5V
Total Power Dissipation *C 425°C Ptot 1.5W
With X-67 Heat Sink • *a425°C 800aW
Ho Heat Sink • Ta425°C 625»W
ELECTRICAL CHARACTERISTICS (fA-25°C unless otherwise noted)

PARAMETER SYMBOL MET TTP MAX UHIT TEST COHDITIOHS
Collector-Base Breakdown Voltage BVcbo 45 V IC-O.laA Ib-0
Collector-Setter Breakdown Voltage LVCBO • 40 V IC-10aA Ib-0
Collector Cutoff Current 100 nA
ICBO CB-307 lE-O
Ealtter Cutoff Current IqO 100 nA VEB-4T IC-0
Collector-Enitter Saturation Voltage CE(sat)* 0.25 0.5 V IC-5O0BA IB-50MA
Base-Snltter Saturation Voltage BE(sat)« 0.92 1.2 V IC-5O0BA IB-50BA
D.C. Current Gain (Wote) HpE 1 « 80 170 360 IC-100«A VCB-IV
HFE 2 * 40 110 IC-500BA VCB-2V
Current Gain-Bandwidth Product fT 60 150 MHs IC-50«A VcB-lOV
Collector-Base Capacitance Cob CB"10T Ib-0
CX908 9 16 PP f-lMHs
CX958 14 18 PP
Hote t HpE 1 is classified as follows Group B 80-160 Group C t 120-240
Group D 180-360
* Pulse Test i Pulse Vidth-O.JnS, Duty Cyele»l^
*
CX908 CX958
(Ta-25°C unless: otherwise noted)
vBE(sat) & VcK(eat) ve *C

p tot 1.6
v« TA
iimi C-10IB
2.0 1.4 pulse
1.2
r
tot (Volt) II lil
ft Jjl
(V)
1.0
V. »
0.6
vBE(sat)lj_
With \ 0.6 "ffll
T^ e
l
^s£>
J
*S
>'
^Q^
rf »
%,
0.4
0.2 I
111
11
Jfl 1
i ^3 VCE (sat )
i
1 1 1
100 10 100 1000

TA (OC) IC (-A)
Hpj T8 Ic r
T vs 1c
200
TS0
•«
"!!
FV
DFE
'W_
ion ijjjjjj
1
1 Jjlji
1
so
Pal se Test
III
100 1000 100 1000
X C (mA)
IC (»A)
1.78.8300A.0830A
CX917
NPN SILICON HIGH FREQUENCY AMPLIFIER
CASE TO-92A
THE CX917 IS HPH SILICON PLANAR EPITAXIAL
TRANSISTOR RECOMMENDED FOR SMALL SIGNAL
HIGH FREQUENCY APPLICATIONS SUCH AS
* TV VIDEO DRIVER
* FM IP STAGE
* RP & CONVERTER STAGES UP TO SV BAND BBC

Collector-Base Voltage v
CBO 40V
Collector-Emitter Voltage VCEO 50V
Emitter- Base Voltage VgBO 4V
Total Power Dissipation (Ta*25°C) Ptot 250mV
ELRCTRICAL CHARACTERISTICS (Ta-25°C unless otherwise noted)
Collector-Base Breakdown Voltage BVcBO 40 V IC-O.lmA IE-O
Collector-ftiitter Breakdown Voltage LVCEO 30 V IC-lmA IB-O
Collector Cutoff Current ICBO 100 nA VCB»20V lE-0
Emitter Cutoff Current I EB0 100 nA VKB-3V ic-o
Collector-Emitter Saturation Voltage VcE(sat) 0.1 0.4 V IC-20mA lB-2mA
Base-Emitter Voltage VBE 0.7 0.85 V IC-5mA VCE-10V

HyE 40 80 150 IC-5mA VCE-lOV
B.C. Current Gain
30 60 I<3-0.5mA VCE-1CV
fT 200 330 MHz I C -5«A VCE-lOV

Feedback Capacitance Cre 0.95 2 pF Vcb-IOV lB-0
f-lMHz
Ccrhb' 23 45 PS IC»lmA VCE-5V

Collector-Base Time Constant
f -31. 8MHz
1
CX917
TYPICAL OUHACTEBISTICS
HpE • XC
160
III HI II
140
II
I
100
30 Jl
60
40 flr
llll
20 ,-10V
Pul se T<98
111 ml
0.1 1 10 100 0.1
IC (-A) IC (-A)
Cre ys V Cb
10
IB-O
f-1*
3
Cre
(pF) 1
6.3
100 0.1
1 3 10 30 100
VCB (V)
1.78.3300A
CX918
NPN SILICON VHF AMPLIFIER
CASE TO-92A
THE CX918 IS NPN SILICON PLANAR
EPITAXIAL TRANSISTOR RECOMMENDED
TOR SMALL SIGNAL VHP APPLICATION
SUCH AS
* TV THIRD VIDEO IP STAGE
* PM RP & CONVERTER STAGES

BBC
* VHP OSCILLATOR

ceo
Emitter-Base "Voltage vebo 4V
Total Power Dissipation (Ta425°C) Ptot 250mV
Operating Junction & Storage Temperature Tj. T 8 tg -55 to 150°C
ELECTRICAL CHARACTERISTICS (*A-2-5°C unless otherwise noted)

Collector-Base Breakdown Voltage BV CB0 30 V IC-O.lmA IB-O
Collector-Emitter Breakdown Voltage LVCEO 20 V IC-lmA Ib-0
Collector Cutoff Current ICBO 100 nA VCB-20V Ib-0
Emitter Cutoff Current IEBO 100 nA Veb-3V Ic-O
Collector-Emitter Saturation Voltage vCE(sat) 0.2 0.4 V IC«20mA lB«2mA
Base-9nitter Voltage Vbb 0.76 0.85 V IC-7«A VCE-lOV
D. C. Current Gain HPE 40 70 150 IC-7i«A Vce-IOV
30 55 IC-0.5«U Vce-IOV
Current Gain-Bandwidth Product fT 400 620 MHz IC-7«A Vce-IOV
Peedback Capacitance Cre 0.8 1.5 PP VCB-10V IE-O
f-lMHz
Collector-Base Time Constant Ccrbb' 20 35 PS IC-1*A VCE-5V
f -31.8MHz
A.C. Power Gain Gpe 26 dB IC-7"A VCE-IOV

f-45MHz
CX918
TYPICAL OUBACTEHISTICS
(TA-25°C unleaa otherwise noted)
va Ic VfiE * V CE ( 8a t) vs I
c
160 1.6
l!
ill III! Hi llllll
140 1 1.4
Ill
1.2
tt
FE
1
100 (Volt) III

1
"""
80 ii
be
i II Ilit
,M
60
L "ifr\
0.8
0.6
O VCE-lOV
11
40 s 1 0.4 Lf
1
VCE(sat)
20 3-10 1 0.2 9 IC7IOIB -ii
PULLse Test
111 If Tin
10 100 0.1 1 10 100
0.1 1
IC (mA) J C (-A)
fT y» Ic
300
Cre va Vqj
10
III || lR-0
II
Hi! f-lM
II 1
3
||
1
£T c re
J
(MHz)
M ii 1
l
1
(pF) 1
III
200 1
0.3
1
Vci>1 07 ,
III III .11 0.1*7
0.1 10 100 1 3 10 30 100
IC (mA) VCB (V)
1.78.3100B
D20 U20
SEMICONDUCTOR KIT FOR BLINKING TOY APPLICATIONS
The D20 • 020 is a two—component semiconductor kit designed for blinking toy
applications* It consists of a red LED lamp (D20) and a programmable unijunction
transistor (U20). When they are connected with few resistors, a capacitor and a
battery t the LED leap will blink at 2 to 3 cycles per second.
D20 BED L.EJ). LAMP U20 PROGRAMMABLE UNIJUNCTION TRANSISTOR
<§r
AGK
REFERENCE CIRCUIT
BATTERY ul a "> h C
(Volts) (ohms) (ohms) (ohms) (ohms) U*/v)
220 22/10
! 'I TWWl ^^ ^ 12 6.8K 330 100E
9 6.8K 330 100 100K 22/10
6 6.% 330 68 100K 33/6
4.5 6.8K 330 100K 33/6
3 6.8K 330 100K 47/3
Blinking frequency^ cycles per second. Average current consumption is less

+h«« fif. fi, n and C can be changed to adjust ON-OFT Time of L.E.D. lamp.
TXPICAL APPLICATION
-The complete circuit is wired by printed
.0.
/ circuit board with lamp exposed at top of
vehicle only.
X.
L-o— ^-o-^
D20 U20
physical dimensions in inches
020 bed l.bjq. lamp
r^
k
r
:«.U*^
020 PBOGRAMUBtt UNIJUNCTION THANSISTOB
OÎOmp.
-*•- 3 UAOS <M>20m«.

DM. «XDPIATH>
5.78.S210.MIL51
D44C
THE D44C IS A SHOES OF HPH SILICOH CASE T0-220B

EPITAXIAL BASE POWER TRANSISTORS
DESIGNED TOR MEDIUM SPEED SWITCHING
AND AMPLIFIER APPLICATIONS . ITS
HIGH CURRENT GAIN-BANDWIDTH PRODUCT
(fT-3°WH» TYP « 0.2A Ic) PERMITS
AMPLIFIERS OPERATING AT FREQUENCIES
ABOVE lMHz. BCE
THE D44C IS COMPLEMENTARY TO D45C.
All dimensions in inches

D44C1 D44C4 D44C7 D44C10
D44C2 D44C5 D44C8 D44C11
ABSOLUTE MAXIMOM RATINGS P44C5 D44C6 D44C9 D44C12
Collector-Emitter Voltage (VbE-O) VcES 40V 55V 70V 90V
Collector-Emitter Voltage (lfl-0 VCEO 50V 45V
) 60V 80V
Emitter-Base Voltage VSBO 5V
Collector Peak Current (t^lOmS) ICM tU
Total Power Dissipation • Tc £ 2$oc Ptot 30W
• Ta^25°C 1.67W
Junction Temperature Tj 150°C
Storage Temperature Range Tstg 55 to +150OC
THERMAL RESISTANCE
Junction to Case
4.17°C/W max.
Junction to Ambient
75°C/W max.
P va T SAFE OPERATING AREA (D.C.)

50
tot A
—
10 rr=r r~ ::_ r
= .T^f-r-
=
"II
t)=- '
1 11
*0
-{*
_
* }0
Lfl
1> -
1?
fe
f fe
-A
20
U 1* 0.3
£""
-D44Cl,c,?
ii
—
V. D44C 1.5,6^
(-D44C r.8,9-^
fe
D44C L0,ll,12
0.1
100 200 3 10 100
T
A(°C)
TCE(t)
D44C
PARAMETER SYMBOL MIN TYP MAX UNIT 9B8T COHDITIOHS

Collector-finitter Breakdown Voltage LVCE0 * I c -100mA Ib-0
D44C1, 2, 3 30 V
D44C4, 5, 6 45 V
3M4C7, 8, 9 60 V
D44C10, 11, 12 80 V
Collector Cutoff Current Ices 10 P* VcE-Hated VCES,VBE-0
Quitter Cutoff Current iebo 100 ttA Veb-5V Ic-0
Collector-Emitter Saturation Voltage VCE(sat)*

D44C2, 3, 5, 6, 8, 9, 11, 12 0.5 V IC-1A IB-0.05A
D44C1, 4, 7, 10 0.5 V IC-IA IB-0.1A
Base-Emitter Saturation Voltage vBE(sat)» 1-3 V I C -1A IB-0.1A
Baoe-Emitter Voltage be * 0.82 V IC-IA Vce-IV
D.C. Current Gain

D44C2, 3, 5, 6, 8, 9, 11. 12 HPE 1 • 40 120 IC-0.2A V CE -1V
D44CI, 4, 7, 10 25
D44C2, 5, 8, 11 Hj>e 2 * 20 IC-IA VCE-IV

D44C1, 4, 7, 10 10
D44C3, 6, 9. 12 HPE 3 * 20 IC-2A Vce-IV
Collector-Base Capacitance Cob 40 100 PF VcB-lOV Ie-0

f-lMHz
* Pulse Test » Pulse Width-0.3mS, Duty Cycle-1^
HFE V8 Y TBE 7»
ic CE(«at) ft *C
80
llT,
70 '
II
60
H
PE
50 I
40
30
20
Pu se)
1-
Test
10 •E-
T/ -2 5°C 1
0.01 0.1 10
"C (A) *c(a)
12.77.8700E
D45C
THE D45C IS A SERIES OP PHP SILICON CASE T0-220B

EPITAXIAL BASE POWER TRANSISTORS
DESIGNED FOR MEDIUM SPEED SWITCHING
AND AMPLIFIER APPLICATIONS. ITS
HIGH CURRENT GAIN-BANDWIDTH PRODUCT
(fT-30MHz TYP © 0.2A I(j) PERMITS
AMPLIFIERS OPERATING AT FREQUENCIES
ABOVE 1MHz. BCE
THE D45C IS COMPLEMENTARY TO D44C.
D45C1 D45C4 D45C7 D45C10

D45C2 D45C5 D45C8 D45C11
ABSOLUTE MAXIMUM RATINGS D45C3 D45C6 D45C9 D45C12
Collector-Emitter Voltage (Vbe-O) -VcES 40V 55V 70V 90V
Collector-Emitter Voltage (lB«0 ) -VCEO 30V 45V 6pv 80V
finitter-Base Voltage -vebo 5V
Collector Feak Current (t^lOmS) -ICM 6a
Total power Dissipation © Tc< 25°C Ptot 30W
© Ta$25°C 1.67W
Storage Temperature Range Tstg -55 to +150«>C
THERMAL RESISTANCE
function to Case 4.17°C/W max.
Junction to Ambient e ja 75°C/W max.
tot A SAKE OriOFUVTING ARKA (D.C.)

10
E~ ::: Et:
^jK~. t
... t
1
'
"II
?SL_X
t=b
' rtV
—r^ '
t \\
: IV "tt
4
J
- i
7 ,
0.3
vfc
D45 C7, 8, 9
D 45 C1C .1 1,12-
5
— ;;(
0.1
200 10 30 100
-v,
a(°c) ce(v)
D45C
TA-25°C unless otherwise noted )
PARAMETER SYMBOL MIR TTP MAX URTT TEST CONDITIONS
Collector-Emitter Breakdown Voltage *
-IVCBO -IC-100mA Ib-0
D45C1, 2, 3 30 V
D45C4, 5, 6 45 V
D45C7, 8, 9 60 V
D45C10, 11, 12 80 V
Collector Cutoff Current -Ices 10 VCE-Rated Vces,VbE-°

r*
Emitter Cutoff Current -ipo 100 -VEB-5V Ic-O
P*
Collector-Emitter Saturation Voltage -VCE(sat) *

D45C2, 3, ), 6, 8, 9, 11, 12 0.5 V -I C -1A -IB-O.05A
D45C1, 4, 7, 10 0.5 V -IC-1A -Ib-O.IA
Base-Emitter Saturation Voltage ~v

BE(sat) * 1.3 V -IC-1A -IB-0.1A
Base-Emitter Voltage -VBE * 0.85 V -IC-1A -Vce-IV
B.C. Current
D45C2, 3, 5, 6, 8, 9, U, 12 H>e 1 • 40 120 -I C -0.2A -Vce-IV
D45C1, 4, 7, 10 25
D45C2, 5, 8, 11 HpE 2 * 20 -IC-1A -VCE -1V

D45C1, 4, 7, 10 10
B45C3, 6, 9, 12 Hje 3 * 20 -IC-2A JTce-IV
Current Gain-Bandwidth Product fT 30 MHs -IC-0.2A -VCE-5V
Collector-Base Capacitance Cob 75 125 PP -VCB-IOV Ig-0

f-lMHs
* Pulse Test i Pulse Width-0.3mS, Duty Cycle-1^
V8 IC V V
CE(sat) k BE
80 iMjl
70 ii
1
60
50
E
40
30
20
Pulsi» Te St
V
T/1-2 >oc
0.01 0.1 1 10
^C (A)
12.77.0870E
EN930 SE4010
NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS
CASE TO-106
THE EN930, SK4010 ARE NPN SILICON PLANAR EPITAXIAL
TRANSISTORS FOR AF LOW NOISE PREAMPLIFIER APPLICATIONS.
CBE
ABSOLUTE MAXIMUM RATINGS EN930 SE4010

Collector Current IC 50mA 50mA
Total Power Dissipation (Ta«.25°C) Ptot 200mV
derate 2mW/°C above 25°C
Operating Junction & Storage Temperature 'etg -55 to 125°C
ELECTRICAL CHARACTERISTICS (Ta-25°C unless otherwise noted) '
EN930 SE4O10
MIN MAX MIN MAX
Collector-Base Breakdown Voltage BVcBO 45 30 V IC-0.01mA IE-0
Collector-Emitter Breakdown Voltage LVC eo 45 25 V IC-10mA (Pulsed)
IB-O
Emitter-Base Breakdown Voltage BVgBO 5 6 V iE-O.OlmA IC-0
Collector Cutoff Current ices 50 nA VCE-45V VBE-0
10 VCB-45V VBE-0
Ta-100<>C
Collector Cutoff Current icbo 200 nA VCB-5V IE-0
3 VCB-5V IE-0
T A -65°C
Emitter Cutoff Current lEBO 50 nA VEB-5V IC-0
Collector-Emitter Saturation Voltage VCE(sat) 1 V IC-lOmA IB-O. 5mA
0.35 V iC-lmA IB-O. 1mA
Base-Emitter Saturation Voltage vBE(sat) 0.6 1 V IC-10mA IB-O. 5mA
D.C. Current Gain HFE 100 300 IC-10uA VCE-5V
150 IC-500uA VCE-5V
600 IC-10mA VCE-5V
200 100C IC-lmA VCE-10V
Current Gain-Bandwidth Product fT 30 MHz IC-0.5mA VCE-5V
60 300 MHz IC-lmA VCE-5V
Collector-Tâ* C.paojtanca Cob 8 4 pF VCB-5V IE-0 f.
1MH!
EN930 SE4010
EN930 SE4010
MIN MAX MIN MAX
Noise Figurs. NF 3 dB IC-10uA Vcb=5V
RG-lOKr.. f-lOHz-lOKHz
3 dB IC-3CjliA VCE-5V
RG-10Ka f-lKHz
Small Signal Current Gain hfe 150 600 IC-lmA VCE-5V

f-lKHz
TYPICAL CHARACTERISTICS AT TA-25°C
D.C. CURRENT GAIN V BE AND v CE($at)

III 1 E M III
"fe 111 HI (V)

..pulse test
111
V CE-6V ||
1.2 Ill
1.0
T V BE
• VCE*5V
1
V «\
0.6
*
T
200 vCE($at) T
t
0.2
n ] 4 =1Hh++ftt . HI
1 10
C <mA) C <mA|
COLLECTOR CUTOFF CURRENT BROAD BAND NOISE FIGURE

vs AMBIENT TEMPERATURE VS COLLECTOR CURRENT
"1
m ^ ==
V CE -6V
==
1
100
=.-(zz= ==; I I I < Hi-
(dB)
ICBO R G -500n
3
InA)
10
=- R 5-1 K -
^Vcb-j0V-
- Ie*c R G" 2K-
„
1 —J
~—
___ ==*
^s — H<j-bK
Rq-K>K
01 . i
100 1000
40 80 120 160
TA(°C)
2.78.45O0B
) ) )
FPT100 FPT100A FPT100B

NPN SILICON PHOTO TRANSISTORS
GENERAL DESCRIPTION MECHANICAL OUTLINE

The FPT IOO, FPT IOOA ^ PPT IOO B are three terminal NPN silicon planar TO-IQ6
p hotot ransistors. It features fcteh illumination sensitivity, fast response time and low dark
currant. Beside*, tho availability of bat* load also allows tho circuit dosignor to optimisa
thoir design. It is intondod for punched cards and paper tape reader, intrusion alarm
sensor, position detector mn4 optical tachometer.

Continuous Power Dissipation & Ta = 23°C, Pmax (note I 6* 2)
Continuous Power Dissipation 9 Tc = 25°C, Pmax (note 1 «S- j)
Continuous Collector Current, lc n>ax
Collector -Base Voltage; Vceo (note s)
Collector- Emitter Sustaining Voltage, Vceo (note 3 & 5)
Operating Junction Temperature Range, Tj
Storage Temperature Range, Tstg
Relative Humidity at Temperature
ELECTRICAL CHARACTERISTICS (a > ta - 23 C u nless otherwise 'specified)
PARAMETER""* SYMBOL MIN TYP MAX UNIT test conditions
Collector -Bate Breakdown Voltage BVcso SO in V lc - IOOjiA (notes)

Collector- Emitter Sustaining Voltage Vceo <>...) 31 50 V lc - ImA ( pulsed )( note 3
Emitter- Collector Breakdown Voltage BV E co 7 V l«c - IOOjiA ( note 5
Collector Dark Current •cbo 0.25 25 nA Vce = IOV (noteS)
Collector Dark Current •cbo 0.015 0.5 *A Vca- IOV T. -63»C (notes)
Collector Dark Current •ceo 2 100 nA V«-SV (notes)
Responsivity (Tungsten) "cbo O.i 1.4 -A/mW/cm* Vce-loV (notes 3 6> 8)
Responsivity (Ga As) »ceo 1.1 4.0 -A/mVC/cm 1 Vc-IOV (noresAAVe)

Photo Current (Tungsten) •cE (L)
FPT IOO OJ 1.4 mA Vce - SV H-SmW/cm«

FPT iooA 1 3 mA (notes 3 & 7)
FPT iooB 1.3 2.0 mA
Photo Current (Ga As) 'CE (U O.o « mA V„ - 3V H=3mw7cm « (notes 4 6- 7)
Light Current Rise Time tr 2.0 -sec ( note 6
Light Current Fall Time »f 2.0 -asec ( note 6

Collector - Emitter Saturation Voltage VcE(..t) O.li 0.3 V lc - SOO-«A H-IOmW/cm*
steady state limits. The factory should be ulted applications involving pulsed < '
duty cycle
IHasp ratings give a maximum junction temperature of +83°C and junction to case thermal resistance of +3O0°C/W
(oerattng facte; of 3.33mW/°C) and a junction to Ambient thermal resistance of +6O0°C/W (derating factor of
i.67mw.'°C)
Mete 3i Measured r± norad irradiance as emitted from a tungsten filament lamp at a colour temperature of 2834°K
Net* 4. These are values obtained at noted irradiance as emitted from a GaAs source at CO*".
Nate Si Measured with radiation fiux intensity of less than O.MW/cm* over the spectrum from IOO to ISOO nm.
Note 6: Rice time is defined as the time required for l« to rise from IO% to oo% of peek value. Fall time is defined as
the time required for let to decrease from oo% to IO% of peak value. Test Conditions are : l« - 4mA, Vc« - 3V,
Sl- IOO ohm, GaAs source.
Nate 7. No electrical connection to base lead.
Note 8: No electrical connection to emitter lead.
1
FPT100 FPT100A FPT100B
TYPICAL ELECTRICAL CHARACTERISTICS
FPT 100 • FPT 100A • FPT 100B
:tb 1ST cs LIGHT CURRENT VERSUS .

COLLECTOR. *ASE CHARACTERISTICS
ffff t ccxou.nwt.MuM'. M54 •<:
CCXOU.'kJh.tLe '
J.LJ
TÎS-C 7>
T. » 1 1
|
A' FTT
^ il
11*1
tl
.w...
5 t
1 •_'i m 2
-
"il .»,».
5 -WW
i '
5 1
""lO W '
1»iL L^W,
i ,
— - 1
-U »—
" u
i „ "
no - ;
|
- COllECTCMI - fcASt V
RESPONSE COLLECTOR DARK CURRENT

100- VERSUS AMBIENT TEMPERATURE SPECTRAL CHARACTERISTICS
1
1
/
X \
"»
/
f f
^ \
J J \
f
/ y
/
F HV * I
$
,
*
f
10V
/ \,
\
«, V
/
^
s
*
\>
• i/ J.
» <n
RISE AND FALL TIME TURN ON DELAY TIME FOR TURN OFF DELAY TIME FOR
VERSUS COLLECTOR CURRENT CIRCUIT SHOWN IN FIGURE 2 CIRCUIT SHOWN IN FIGURE 2
N J
IV s l
IJ
I
1
"" .».
v«-
\\
V s,
1 I
\ \ i
i
' V
I ^ <!"
i .
.
CIRCUIT FOR
rl>—O-"
DTL V6 937
TTL Ve 9016
lc-2mA _J_
3.78.S110
KM PRODUCT LINE
SILICON TRANSISTORS
FOR AM-FM AND RADIO CONTROL APPLICATIONS
CASE
The KM PRODUCT LINE TO-92A TO-106

are iHlcon planar epitaxial
tramiftori for AM-FM receiver and radio control appli-
cations. Thty are supplied in TO-92A can. TO-106 e«M it
alio available for the small signal types.
\y
DEVICE TYPE CASE CHARACTERISTICS
KM928 : NPN UHF/VHF Typt T « 660MHz

f Ocrbb'* 80S
TOWA
KM918 NPN FM-RF Typa
:
T -460MHz
f Ccrbb'-18pS
or
KM917 : NPN AM/FM-IF Typt ff- 210MHz Ccrbb'-23pS
To-ioe
KM901 : NPN Central PurpoM AM Typt fy- 140MHz Ccrbb'-eOpS
KM9014 : NPN General Purpow High Gain Type TO-92A

or H FE -80to 1000* c - 1mAl
KM901S : PNP General Purpote High Gain Type TO-106
KM904 : NPN Audio Output Type TO-92A

KM905 : PNP Audio Output Type only 9 lc- 150mA -16mA
l
B
KM934 : NPN Servo Control Type TO-92A VceImO-O-BV"*

KM935 : PNP Servo Control Type only ©Ic-ISOmA fe-3mA
H FC GROUPINGS (* Preferred flFE Group)

GROUP A B C D E F G H 1 • C/V«
I
KM 928 40-80» 60-120 1mA/6V

KM 918
KM 917 29-44 40-69* 64-80* 72-108 97-146 1mA/6V
KM 901
KM9014
60-160 100-300* 200-600* 400-1000 1mA/6V
KM9015
KM 904
64-91 78-112 96-136* 118-166* 144-202* 176-246 60mA/1V
KM 908
KM 934
80-160 120-240* 180-360* 60mA/1V
KM 935
KM PRODUCT LINE
DEVICE SPECIFICATIONS (TA - 25°C unto* otherwiM (pacified)

MAXIMUM MTSOO* iuctmcm. CHMueimnncs
e Voo Von Vmo N ok • Va Vat • IcWe. Vnkrt • k/W «T • kWct Oak* OMW NO
TYFt Hn Vca-MV
1,-0
tutl M M M MM, M) W) (v) twtl/M M (•AVfeU IMHd kttU/IV) 0*1 •*b> US)
« «n— «M- WHM. *M- 1VP4MK IVf
KM828 n a 20 3 2(0 60 <a 0.724KS 1/6 01* 10/1 800660 6/6 o.b-i.3 8-20 2.«.2
nana tO 20 12 a 2(0 (0 18 072*86 M6 O140.6 10/1 460-260 1/6 1*1.7 1(38
KMS17
(NPN)
0 26 20 3 260 60 16 om-aos m 0.0(0.6 10/1 210160 1/6 1*2* 23-60
i
KM801 100 » 20 8 an 60 16 0834:86 i* aooo.6 10/1 140-60 1/6 2.7-38 60-160
(NPW i
KMS014 100 20 20 6 300 60 18 0(30.86 i* 0.07-0.6 10/1 14060 1/6 2.76 ISO- 2.not.3
(NMI i
KM0O1S 100 28 20 s 300 60 16 0040.86 1/6 00746 10/1 12060 1/6 3.6* 2.IKK.3
<W»> i
KM804 600 2S 20 5 600 1 in IS 0.72- 60/1 O.I4O.0 180716 200- 10/6 4.8-
(NPN)
i
KM905 SOD 2S 20 6 600 100 18 072- 60/1 0140.8 160/16 120- 10/6 0-
ffNPt
KM034 600 26 30 s 600 100 26 0.72- 60/1 0.2O.0 160/3 180- 1M 4-

WW
KM93B SOD 36 30 5 600 100 26 0.72- 80/1 0.7-0.6 180/3 16S- 10/S 6
mm
Voe -6V For p-n-p tMvtcn. voJl^ge end current w*hMt art
tot*' t> c - 1mA
l f-31.8MH* Atfjitie
NF • l c -2mA Vd-BV R a * tOQQ f-MOMH*
NF •Ic- 0.1mA Vce-BV Bo-lOkfl t-30Htt»1BKHi
TYPICAL CHARACTERISTICS (T A-25°C unlets otherwiie specified)
KM92B • KM91B • KMS17 • KM901
III |
"lllll
1
1
1
1
1 1
1 !
II KM9 Oil I
nrn 1 1 !!
-v CE -sv KM928
1
III
KM917 1)]
I!'! Nil 1
KM0014 • KMB01B
HFE mill
II
''II mill'
?s
H KM BTTrt J
I
I Hill
tl I
BE
+H« v4m
V CI
r VcEla*i
III
U"bHI
III Ji ttUhrtffl
KM904 • KMSC6 • KMS34 • KIM3S
Hff I'll! KM 134

S
KN S3S
in *
\ S$
llllll
fmii
n 1 lllll lllll
KM PRODUCT LINE
TYPICAL y - PARAMETERS AT TA-25"C

KM928 (Common Bat* f-IOOMHz VC B"6V)
100 -
-1001000 FfTffll
miO
Ob lvrb»
"Cob
0ib ..Bob
(pF) --(pFI
ImO) ( OiO)
Cob
:. i
u -10 100
III -2 20 U -Ua2
as i 5 0.5 1 5 0.5 1 5 0.5 1 S
'C(mA) 'C(mA) 'C(mA) 'C(mA)
KM918 (Common Base f= 100MHz Vcb~5V)

-inn1000 „. -, 100, , u , ,
100
.---J «rb "Zjf?^.

C ib 'Vrb'
(pF) <"«>
""E
•' _ (•)
lv fb'
ImO)
fifb
(°)
9ob
0i«)
9obZ Cob
(pF)
-200 200
Sfb
.
Cob
|»rb
-tO 100 -100 to 100 10
2LUHU L-U-U-2 20 -20 2 20 2 0.2

as 1 5 0.5 1 5 0.5 1 5 as i s
'C (mA) l
c (mA) 'C(mA) 'C(mA))
KM917 (Common Emitter f- 10.7 MHz VcE*5V)

100 TTTTTrr | I I I 1 -100 IQO i / -100 i i t 100 i i i i j no
9ie
(ml» (pF) 0.O)
r
1
— 10 100
Tl*
f/
no 2 20
'0.5 1 5
as ' 5 0.5 1 5
IC(mA) IC(mA) C(mA)
KM PRODUCT LINE
r* I
-4k it®
+
E
S
.h
ii ? i
I !
i] 1 r
UJ
ft
i n
O I r* t
I
§
5 â X sinr
i
i
o i 1
CO
z
o
21 1
g
3 "l
I»l
a.
hi
< §
i?
* is
Ml
3.78
LN9014 LN9015
COMPLEMENTARY
LOW NOISE TRANSISTORS FOR AUDIO PREAMPLIFIERS
Tlw LN 0014 (NPN), LN 9015 (PNP) are complementary tRIcon

passivated planar epitaxial transistors fabricated by low noise
CASE
technology. They feature high current gain, low noise figure
(0,7dB typical at 30Hz - ISKHz) and are best
TO-92A
suitable for audio
preamplifier applications.
EBC
ABSOLUTE MAXIMUM RATINGS: *»i»h> *>*••. ««» -a <»«»«,«i,«
irfUiieuiui'oaae voltage v CBO 30V

VcEO 25V
vEBo 5V
Collector Current
'c 100mA
Total Powor Dissipation (T -25°C)
A 'd 300mW
Tj 150°C
Storage Temperature Range
T«. -55to+150°C
ELECTRICAL CHARACTERISTICS (T A -25°C)

Collector-Emitter Breakdown Voltage 25
LVceo 50 V l
c 10mA l
B
»
•cBO 50 nA VCB -30V l
E
=0
•ebo 100 nA VEB -5V l
c
-0
Collector-Emitter Saturation Voltage VCE(i«) 0.08 0.25 V l
c " 10mA l « 1mA
e
Base-emitter Voltage
Vbe 0.55 0.62 0.75 V l
c -1mA Vce'SV
D.C. Current Gain
•Vei 100 1000 l
c =1mA VC£ -5V
MFE2 50 VCE = 5V
l
c -10/lA
*r 120 MHz l
c -1mA V^-SV
Collector-Base Capacitance, NPN/PNP Cob 2.4/3.5 PF Vcb-IOV l
E
-0
f - 1MHz
Noise Figure (30Hz - 15 KHz) NF 0.7 3 dB l
c -0.1mA VCE »5V
ft
G =10Kohms
Output Noise Voltage (RIAA equalized)
Vo(N) 300 *rV See Low Noise
Preamplifier
Circuit
H FE , is classified at follows. GROUP B 100-300 GROUP C 200-600 GROUP D 400-1000

: : :
LN9014 LN9015
TYPICAL CHARACTERISTICS (T A =»2S°C UNLESS OTHERWISE SPECIFIED)
CURRENT GAIN
D.C. V B E ANDVcEUat)
v» COLLECTOR CURRENT vs COLLECTOR CURRENT
100 100
'c(mA)
COLLECTOR CUTOFF CURRENT h -PARAMETER

vs AMBIENT TEMPERATURE vs COLLECTOR CURRENT
200 10
100
= = =| iS= ==g =ft =:
Icbo
InA)
10
==
1
iÎB'SOV-h
l
E
=0
0.4
LN 9014
"
LN 9015"
0.1 i
0.2 -I i I I Ui U-
80 120 160 0.1 1
TA(°C) 'C (mA)
EQUIVALENT NOISE VOLTAGE AT BASE BROAD-BAND NOISE FIGURE

NF
En 1
(dB)
<MV)
R<v=i( K «, R G =500ST,
0.15
*G = S
*-r-
|
0.1
R G =2 C ;
Rg 551 ^
R G =500J I -
G=2>c
0.05 Rq =5 1
V CF rtt
f=1 3H j-50h z
"1 =
=10KC f= 301-\z--1 5K Hz
i
i
G i
10 100 1000 10 100 1000

'C (pA) C(juA) 2.78.4500B.0450B.
LN9014 LN9015
LOW NOISE PREAMPLIFIER CIRCUIT
+Vcc
I—WV * W< 1
"~-— APPLICATION
-^_^^ FOR MAGNETIC CARTRIDGE FOR CASSETTE TAPE RECORDER
CIRCUIT DETAILS~^~--^^^
Vcc +22 V +5 V
«L 47 Kohms 10 Kohms
R1 180 Kohms 22 Kohms
R2 12 Kohms 3.9 Kohms

R3 2.7 K ohms zero
R4 820 ohms 2.2 Kohms

R6 390 ohms 560 ohms
R8 27 Kohms 4.7 K ohms

C1 0.01 flF 0.022 jlF
C2 0.003 ilF zero
Q\ LN 9014CorD LN 9014CorD
Q2 LN 9014BorC LN 9014BorC
Frequency Response RIAA equalized equalized at 4.75cm/sec.
Input Impedance 200 K ohms 200 K ohms
Max Undistorted Output 4Vrms 0.5 V rms
Voltage Gain 39dB@1KHz 30dB@ 400Hz
Total Harmonic Distortion better than 0.1% ©1 KHz better than 0.2% @ 400Hz
Output Noise Voltage 300*4/ @ Rg - 24K ohms 100pV©R G -100ohms
Note: Reverse polarity of supply voltage and capacitors for PNP transistors LN 9015.
MAS32
PNPN SILICON CONTROLLED SWITCH
The MAS 32 is a Planar PNPN Silicon Controlled Switch offering outstanding circuit design flexibility by providing leads
to all four semiconductor regions. It is intended for time base circuits and other television applications, also suitable as
trigger device for thyristors and as driver for numberical indicator tubes.
A «,!
T
ABSOLUTE MAXIMUM RATINQ8
Storage Temperature -65*C to ISO'C
Operating Junction Temperature 150»C
Power Dissipation 25*C ambient
NPN PNP
VCBO 70 -70 V
VCEO -70 V
VEBO 5 -70 V
IE max. -100 100 mA Dimension in mm.
IC max. (DC) SO mA Ga connected to case
ELECTRICAL CHARACTERISTICS ( TA-2S°C)
Individual NPN Transistor MIN. TYP. MAX. UNIT

VCE(sat) Collector Emitter Saturation Voltage 500 mV
IC » 10mA, IB • 1.0mA
VBE(sat) Base Emitter Saturation Voltage 900

IC = 10mA, IB » 1.0mA
hFE D.C Current Gain
IC » 10mA, VCE = 2V SO
Ctc Collector capacitance s pf
IE « l
e = 0, VCB = 20V
Qe Emitter Capacitance 30 pf
IC » Ic » 0, VEB = 1V
ICER Collector Cutoff Current 100 nA
VCE » 70V, RBE » lOkohm
IEBO Emitter Cut Off Current
IC = 0, VEB = 5V
- 1
M
MAS32
ELECTRICAL CHARACTERISTICS <TA-2S«C,
Individual PNP Transistor MAX UNIT

ICEO Collector Emitter Cut Off Current -1 *A
IB - 0, VCE «-70V
IEBO Emitter Base Cut off Current -10 *A
IC * 0, VEB ~70V
hFE D.C Current Gain 0.25 25
IE - 1mA, VCB -
Combined Device :
-
Forward Voltage ( RGkK » 10 kO )
IA - 50mA, IGa- 1.4 V
IA 1mA, IGa« 10mA 1.2 V
IA = 50mA, iGa » 0. T] = -55*C 1.9 V
>H Holding Current 1.0 mA
IGa » 10mA, Vbb * 2.0V, RGkK = 10
ton Turn on Time when switch from :

—
-VGkK = 0.5V to +VGkK - 4.5V
RGkK * 1 kQ 0.25 mS
RGkK' 10 kQ 1.5
APPLICATION HOTE HO. MBAP 154 IS AVAILABLE
2. 76.3210
MAS39
PNPN SILICON CONTROLLED SWITCH
The MAS 39 is a Planar PNPN Silicon Controlled Switch offering outstanding circuit design flexibility by providing leads
to all four semiconductor regions. It is intended for time base circuits and other television applications, also suitable as
trigger device for thyristors. The anode gate is connected to case.
X
St
IBi.Ci)
T
Storage Temperature -65"C to 150"C
Operating Junction Temperature 150'C
Power Dissipation 25*C ambient 250mW
NPN PNP UNIT

VCBO 50 -50 V
VCEO -50 V
VEBO 4 -50 V
IE max. -100 100 mA Dimension in mm.
IC max. (DC) SO mA Ga connected to case
ELECTRICAL CHARACTERISTICS (Ta= 26'C)
Individual NPN transistor

MAX. UNITS
VCE(sat) Collector Emitter Saturation Voltage 800 mV

IC = 10mA, IB = 1.0mA
VBE(sat) Base Emitter Saturation Voltage
IC = 10mA, IB = 1.0mA
hFE D.C Current Gain
IC = 10mA, VCE = 2V
Collector capacitance 5 Pf
Ctc
IE = l
e = 0, VCB = 20V
Emitter Capacitance 30 pf
Qe
IC = Ic = 0, VEB = IV
ICER Collector Cutoff Current 100 nA
VCE = 30V, RBE = 10k ohm
IEBO Emitter Cur Off Current 10 M
IC = 0, VEB = 4V
MAS39
fLECTRICAL CHARACTERISTICS (Ta»»«C)
Individual PNP Transistor MIN. TYP. MAX. UNIT

ICEO Collector Emitter Cut Off Currant -\0 *A
IB - 0, VCE »-50V
IEBO Emitter Base Cut Off Current -10 *A
IC - 0, VEB —50V
hFE D.C Current Gain 025 25
IE - 1mA, VCB
Combined Device :
-
Forward Voltage (RGk K>10kq )
IA - 50mA, IGa- 1.4

IA - 1mA, IGa- 10mA 1.2
IH Holding Current
IGa = 10mA, VBB * 2.0V, RGkK • 10 kO
ton Turn on Time when switch from :
-
-VGkK * 05V to +VGkK » 4.5V
RGkK*1 kq 0.25 «S
RGkK-IOkQ 1.5
Mm duration taerwoad until

tlirt td cum
disappear* j, ,
APPLICATION NOTE NO. MEAP 134 IS AVAILABLE
2.78.3210
PRELIMINARY
MD8009
DIGITAL ALARM CLOCK
GENERAL DESCRIPTION
The MD8009 is a 40-lead DIP monolithic digital alarm clock utilizing MOS
P-channel low-threshold enhancement mode and ion-implanted integrated
circuit technology. The timekeeping function operates from line frequency
(50 or 60Hz). Four display modes (time, seconds, alarm and sleep) are provided
to optimize circuit utility. The circuit interfaces directly with seven-segment
displays and provides either a 12-hour or 24-hour format. Outputs consist of
display drives, sleep (e.g. timed radio turn-off) and alarm enable. Power failure
indication is provided to inform the user that incorrect time is being displayed.
Setting the time cancels this indication.
FEATURES
* 50 or 60Hz inputs
* Unregulated power supply
* Direct LED/LCD/Tube drive

* 12 or 24 hour display format
* AM/PM outputs
| 12-hour
* format
Leading zero blanking '
* Power failure indication
* Presettable 59-min sleep timer
* Fast & slow set controls

* Blanking/brightness control capability
* Same pin connections as AMI-S1998,
MM5316&MM5387AA.
— «
MD8009
FIGURE 1. BLOCK DIAGRAM
FIGURE 2. CONNECTION DIAGRAM

Dual-ln-Lin* Packag*
AM OUTPUT —
—
1
^J — PM OUTPUT
IIHRS-ktc
—
— COLON (1 Hi)
HRS-I
— — 12/24 HR SELECT
HNS-f iL BLANKING INPUT
HRS-i
HRS-k
HRS-*
—
—
— V^ — SMS
31
—
35
—
34
—
Hi SELECT
turn Hi INPUT
FAST SET INPUT
HRS-t
—
NRS-t
vK —
SLOW SET INPUT
SECONO DISPLAY INPUT
—
ISMMS-f
11
—
31
ALARM OBPLAV INPUT
—
1SMINS-I — SLEEP OKPLAY INPUT
ISMim-ft*-
1IMMS-k—
12
D
00
T
— v«
VDD
— —
ISMINS-i
IIMMS-c ^— o 27
—
SLEEP OUTPUT
MMS-f
MUtS-l^—
O —
—
ALARM "OFF" INPUT
ALARM OUTPUT
— (0 SNOOZE INPUT
MWS-i — OUTPUT COMMON SOURCE
Ml«-k — JL-MINS-c
MMS-t ^— — MMS-4
MD8009
Voltage at Any Pin VSS + 0.3V to VSS -30V

Operating Temperature Range 0°Cto+ 70° C
Storge Temperature Range -55°Cto+150°C
ELECTRICAL CHARACTERISTICS
TA-0° to 70° C, VSS"15 to 28V, VDD-0 unlet* otherwise noted)
PARAMETER MIN TYP MAX UNIT CONDITIONS
Power Supply Voltage (VSS) 8 28 V Counter operating
Power Supply Current 1.8 4 mA VSS= 8V, no output toads
2 5 mA VSS" 28V, no output loads
Power Failure Detect Voltage 8 11 15 V AM or PM flashing
50/60Hz Input:
Frequency DC 50 or 60 10K Hz
Logical High Level VSS-1 VSS V
Logical Low Level VDD VDD+1 V
All Other Input Voltages: Internal depletion
Logical High Level VSS-2 vss V Load to VDD

Logical Low Level VDD VDD+2 V
1 Hz Output:
Logical High Level 1.5 mA VOH-VSS-2V
Logical Low Level 1 MA VOL-VDD
10's of Hours (b&c) and

10*s of Minutes (a&d) :
*
c
o Logical High Level 2 mA VOH-VSS-2V
3 Logical Low Level 1 MA VOL- VDD
o
3
a Alarm and Sleep Outputs:
3
o Logical High Level 3.5 mA VOH-VSS-2V
Logical Low Level 10 AIA VOL-VDD+0.6V
All Other Display Outputs:

Logical High Level 5 15 mA VOH-VSS-2V
Logical Low Level 1 MA VOL-VDD
MD8009
FUNCTIONAL DESCRIPTION
A block diagram of the MD8009 digital alarm clock is shown in Figun 1. The various display modes
provided by this clock are listed in Table I. The functions of the setting controls are listed in Table II.
Figun 2 is a connection diagram. The following discussions are based on Figun 1.
50 or 60 Hi Input (pin 36): A shaping circuit is provided to square the 50 or 60 Hz input. This circuit
allows use of a filtered sinewave input. The circuit is a Schmitt Trigger that is designed to provide
about 6V of hysteresis. A simple RC filter, such as shown in Figun. S, should be used to remove
possible line-voltage transients that could either cause the clock to gain time or damage the device.
The shaper output drives a counter chain which performs the timekeeping function.
60 or 60 Hz Select Input (pin 36): A programmable prescale counter divides the input line frequency
by either 50 or 60 to obtain a 1 Hz time base. This counter is programmed to divide by 60 simply by
leaving pin 36 unconnected; pull-down to Vqd >s provided by an internal depletion device. Operation
at 50 Hz is programmed by connecting pin 36 to Vss-
Display Mode Select Inputs (pins 30-32): In the absence of any of these three inputs, the display
drivers present time-of-day information to the appropriate display digits. Internal pull-down depletion
devices allow use of simple SPST switches to select the display mode. If more than one mode is
selected, the priorities are as noted irt Table I. Alternate display modes are selected by applying
Vss
to the appropriate pin. As shown in Figun 1 the code converters receive time, seconds, alarm and
sleep information from appropriate points in the clock circuitry. The display mode select inputs
control the gating of the* desired data to the code converter inputs and ultimately (via output drivers)
to the display digits.
Time Setting Inputs (pins 33 end 34): Both fast and slow setting inputs are provided. These inputs
are applied either singly or in combination to obtain the control functions listed in Table II. Again,
internal pull-down depletion devices are provided; application of
Vss l° these pins effects the
control functions. Note that the control functions proper are dependent on the selected display mode.
For example, a hold-time control function is obtained by selecting seconds display and actuating the
slow set input. As another example, the clock time may be reset to 12300:00 AM, in the 12-hour
format (00:00:00 in the 24-hour format) by selecting seconds display and actuating both slow and
fast set inputs.
Slanking Control Input (pin 37): Connecting this Schmitt Trigger input to Vqq
places all display
drivers in a non-conducting, high-impedance state, thereby inhibiting the display. Conversely,
Vss
applied to this input enables the display.
Output Common Source Connection (pin 23): All display output drivers are open-drain devices with
all sources common to pin 23, Vss or a display brightness control voltage should be permanently
connected to this pin. (Figun 5).
12 or 24-Hour Sele ct Input (pin 38): By leaving this pin unconnected, the outputs for the most-
significant display digit (10's of hours) are programmed to provide a 12-hour display format. An
internal depletion pull down device is again provided. Connecting this pin to
Vss programs the
24-hour display format. Segment connections for 10's of hours in 24-hour mode are shown in
Figun 3b.
Power Fail Indication: the power to the integrated circuit drops indicating a momentary ac power
If
failure and possible of clock ^the power fail latch is set. The power failure indication consists of
loss
a flashing of the AMor PM indicator at a 1 Hz rate. A fast or slow set input resets an internal power
failure latch and returns the display to normal. In the 24-hour format, the power failure indication
consists of flashing segments "c" and "f" for times less than 10 hours, and of a flashing segment
"c" for times equal to or greater than 10 hours but less than 20 hours; and a flashing segment "g"
for times equal to or greater than 20 hours.
Alarm Operation and Output (pin 26): The alarm comparator (Figun 1) senses coincidence between
the alarm counters (the alarm setting) and the time counters (real time). The comparator output is
used to set a latch in the alarm and sleep circuits. The latch output enables the alarm output driver
that is used to control the external alarm sound generator. The alarm latch remains set for 59 minutes,
during which the alarm will therefore sound if the latch output is not temporarily inhibited by another
latch set by the snooze alarm input (pin 24) or reset by the alarm "OFF" input (pin 26). If power fail
occurs and power comes back up, the alarm output will be in high impedance state.
MD8009
Snooze Alarm Input (pin 24): Momentarily connecting pin 24 to Vss inhibits the alarm output for
between 8 and 9 minutes, after which the alarm will again be sounded. This input is pulled-down to
VDD b V an internal depletion device. The snooze alarm feature may be repeatedly used during
the 59 minutes in which the alarm latch remains set.
alarm "OFF" Input (pin 26): Momentarily connecting pin 26 to Vss resets the alarm latch and
thereby silences the alarm. This input is also returned to Vqd b Y an interna' depletion device. The
momentary alarm "OFF" input also readies the alarm latch for the next comparator output, and
the alarm will automatically sound again in 24 hours (or at a new alarm setting). If it is desired to
silence the alarm for a day or more, the alarm "OFF" input should remain at V<js-
Sleep Timer and Output (pin 27): The sleep output at pin 27 can be used to turn off a radio after a
desired time interval of up to 59 minutes. The time interval is chosen by selecting the sleep display
mode (Table I) and setting the desired time interval (Table II). This automatically results in a current-
source output via pin 27, which can be used to turn on a radio (or other appliance). When the sleep
counter, which counts downwards, reaches 00 minutes, a latch is reset and the' sleep output current
drive is removed, thereby turning off the radio. The turn off may also be manually controlled (at any
time in the countdown) by a momentary Vss connection to the snooze input (pin 24).
TABLE I. MD8009 DISPLAY MODES

selected DIGIT NO. 1 DIGIT NO. 2 DIGIT NO. 3 DIGIT NO. 4
display mode
Time Display 10s of Hours & AM/PM Hours 10's of Minutes Minutes
Seconds Display Blanked Minutes 10'sof Seconds Seconds
Alarm Display 10's of Hours & AM/PM Hours 10's of Minutes Minutes
Sleep Display Blanked Blanked 10's of Minutes Minutes
* If more than one display mode input is applied, the display priorities are in the order of Sleep (overrides
all others). Alarm, Seconds, Time (no other mode selected).
TABLE II. MD8009 SETTING CONTROL FUNCTIONS

SELECTED CONTROL CONTROL FUNCTION
DISPLAY MODE INPUT
•Time Slow Minutes Advance at 2 Hz Rate

Fast Minutes Advance at 60 Hz Rate
Both Minutes Advance at 60 Hz Rate
Alarm Slow Alarm Minutes Advance at 2 Hz Rate

Fast Alarm Minutes Advance at 60 Hz Rate
Both Alarm Resets to 12:00 AM (Midnight) (12-Hour Format)
Both Alarm Resets to 00:00 (24-Hour Format)
Seconds Slow Input to Entire Time Counter is Inhibited (Hold)

Fast Seconds and 10's of Seconds Reset to Zero Without
a Carry to Minutes
Both Time Resets to 12:00:00 AM (Midnight) (12 Hour Format)
Both Time Resets to 00:00:00 (24-Hour Format)
Sleep Slow Subtracts Count at 2 Hz
Fast Subtracts Count at 60 Hz
Both Subtracts Count at 60 Hz
•Whan setting time sleep minutes will decrement at rate of time counter, until the sleep
counter reaches 00 minutes (sleep counter will not recycle).
MD8009
FIGURE 3. WIRING TEN'S OF HOUR DIGIT
PIN 2 vss
NC NC NC m
b* c
PIN l PIN 40 PIN2 PIN 39
_L AM PM b * C 1 HZ
NC
1
T
•
—I •
d
cl
I
i
f-'b
NC« 9
(a) 1 2-hour display format +.+

(b) 24-hour display format. An optional NPN
can be inserted between A & B to increase
the output current of pin 39.
FIGURE 4. PHYSICAL DIMENSIONS IN INCHES

40-lead dural-in-line package
WBIfiaBilEIIBHlgHHIgiaSIBillgHBIiaiagn
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5.78.R2381
MEL11 MEL12
NPN SILICON PHOTO DARLINGTON TRANSISTORS
THE MEL11, MEL12 ARE NPN SILICON PHOTO

CASE TO-106
comcTOt ii*s—
DARLINGTON TRANSISTORS TOR USE IN SEN-
SITIVE PHOTO DETECTOR CIRCUITS. THEY
ARE SUPPLIED IN SELECTED LIGHT CURRENT
GROUPS.
ABSOLUTE HAXIMUM RATINGS MBL11 HEpg

Collector-Emitter Voltage VCBO 30V 25V
Emitter-Collector Voltage VECO 5V 5V
Collector Current IC 100mA 1CO&A
Total Power Dissipation (Ta<.25<>C) ptot JOOmV
Operating Junction & Storage Temperature Tj. T8tg -55 to 100°C
ELECTRICAL CHARACTERISTICS (TA-25OC)

MELll MEL12
Collector-Emitter Breakdown Voltage LVcbo * 30 50 25 40 V IC-10mA (Pulsed)
IB-O
Emitter-Collector -Breakdown Voltage BVecO • 5 8.5 5 8.5 V lE-0.1mA IB-O

(Dark Current)
ICBO • 0.2 0.5 ^ VCE-5V IB-O
Light Current. IL **
Group A 0.5 1 2 mA VCE-3V H-2mW/cm 2
Group B 12 4 12 4 mA VCE-3V H-2mW/om2
Group C 5 5 10 5 5 10 mA VCE-JV H-2mW/cm2
Group D 7 12 20 mA VCE-JV H-2mW/cm 2
•* The light current is the oollector to emitter current measured at specified

irradianee (h). The radiation source is an unfiltered tungsten filament
lamp at 2874°K color temperature.
MEL11 MEL12
TYPICAL CHARACTERISTICS AT Ta-25°C
LIGHT CURRENT
SWITCHING TIME vs COLLECTOR-EMITTER VOLTAGE
Vcc-+10Y 100
[_.
'\
IL-1bA »
40 vfei^Si^S
L-'?A>v
f-€P IL &*ll ^ ,T^v

CaAe <»)
Red LED -• OUTPUT tg*l£-r*~
10
Source
^lK-ohms -2»W«^
tf^2i£—
Turn-On Time « 160uS Litf t a ouroe is an unfiltered

Turn-Off Time * 80uS tuni n filament lamp at
2854 °K eolqr temperature.
5 10 15 20
VCE (V)
SKCTKAl MSPONSE KIATIVE RESPONSE VS. INCIDENT ANClf
s \ « *"'
*
/
r
/ \
\
*
J
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1 / \ \ M
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6 " r
7- f £
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" Z
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3.78.4365
MEL31 MEL32
NPN SILICON PHOTO TRANSISTORS
THE MSMli MBL32 ARE NPH SILICON PHOTO CASE TO-106

TRANSISTORS FOR TOE IN PHOTO COUPLING
CIRCUITS REQUIRING PAST RESPONSE TUB
AND LOW DARK CURRENT.
absolute maximum ratings MEL31 MEL32

Soitter-Baae Voltage VfiBO 6V 6V
Collector Current ic 30mA 50mA
Total Power Diaaipation (Ta<25°C) ptot 200mV
derate 2.67«w/oc above 25°C
Operating Junction & Storage Temperature Tji T8 tg -55 to 100°C
ELECTRICAL CHARACTBRISTICS (
TA-25°C unleaa otherwise noted)
MEL31 MEL32
PARAMETER SYMBOL UNIT TEST CONDTIONS
MIN TYP MAX Mm TYP MAX
Collector-Base Breakdown Voltage BVCBO » 40 40 V IC-O.lmA Ib-0
Collector-Knitter Breakdown Voltage LVcBO » 30 30 V IC-10mA (Pulaed)

IB-0
Emitter-Base Breakdown Voltage BVgBO * 6 6 V lB-0.1mA Ic-0

Collector Cutoff Current ICEO * 2 50 50 nA VCE-5V IB-0
3
(Dark Current) 30 50 nA VCE-5V lB»0
T A-65°C
Collector-Emitter Saturation vCE(aat)< 0.35 0.35 V IC-500UA IB-25/1A

Voltage
D.C. Current Gain HFE * 160 280 VCE-5V IB-IÂ
Light Current Ij, •• 10 25 30 50 /* VCE-5V H-2mW/cm 2

** IL is the collector to emitter current measured at specified irradiance (H) with the
base terminal open circuit. The light source is an unfiltered tungsten filament lamp
at 28540JC color temperature.
MEL31 MEL32
ff^PPTHTTIP. TTME LIGHT CURRERT

TOO-+10V va COLLECTOR-EMITTER VOLTAGE
100
iL-oamA
40
IL
--©
GaAs -»OUWVT
(»a)
10
Red LED
Source
U-ohma
Light Source la an unf liter—

ed tungsten filament lamp at
Turn-On Time « lOuS 2854°! color temperature.
Turn-Off Time*10jiS
5 10 15 20
VcE (V)
SKCItAI. RESPONSE RELATIVE RESPONSE VS. INCIDENT ANGLE
S \ ^v
;
S
••
/
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/ \
>
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^
1 / \ '--/"- 5
/
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WAVB«StM MCKOHS
3.78.43/40
MEU21 MEU22
PROGRAMMABLE UNIJUNCTION TRANSISTORS
The Micro Electronics Programmable Unijunction Troraiitor (PUT) is a three • terminal planar passivand PNPN
device in TO -106 package. The terminals or* designated as anode, gat* and cathode.
The Micro Electronics PUT offers outstanding circuit design flexibility. External resistors can be selected to meet
designers' needs in programming the unijunction characteristics such as i\ , ft,. r and
, l l .
v
The MEU 22 isdesigned for long interval timers and other applications requiring low peak point current. The
MEU 21 is designed for general use where the low peak point current of the MEU 22 is not essential.
For further information, refer to Application Notes Nos. 143, 144 and 158.
:l
*r -
FEATURES APPLICATIONS PACKAGE

• PROGRAMMABLE 1\% R M i «•« lv OSCILLATORS AND TIMERS
• LOW LEAKAGE CURRENT TRIGGER DEVICES
• LOW PEAK POINT CURRENT LATCHING SWITCHES fiE.
• LOW FORWARD VOLTAGE PULSE SHAPING CIRCUITS
• HIGH PULSE OUTPUT VOLTAGE SENSING CIRCUITS
• LOW COST ELECTRICALLY SIMILAR TO
2N6027 eV 2N6028

Veltege Current
Gate-Cathode Forward Voltage +*0 V Peak Forward Anode Current,
Non-repetitive (lO *>sec pulse) 5 A
Gate-Cathode Reverse Voltage -5 V
DC Gate Current ±20 mA
Gate-Anode Reverse Voltage +AO V
Capacitive Discharge Energy f 250 mJ
Anode-Cathode Voltage ±*o V
Power
Current Total Average Power* 300 mW
4
DC Forward Anode Current Temperature
Peak Forward Anode Current, 6
Operating Ambient
Repetitive (lOO *sec pulse Temperature Range _30°Cto+IOO°C
width, 1% duty cycle) 1 A
''Derate currents and powers l%/°C above 23*C
(20 -"see pulse tE-i CV* capacitor discharge energy with no
width, 1% duty cycle) 2 A current limiting
MEU21 MEU22
ELECTRICAL CHARACTERISTICS AT Ta « 25° C <un*« oth«wi. wkkmi
MEU21 MEU22
CHARACTERISTICS SYMBOL FIQ. NO. UNITS TEST CONDITIONS
Min. Mw. Mln. Max.
Peak Point Currant y> 1 2 .16 MA Vs- 10 Volts Ra-1 Mo

5 1.0 MA Vs- 10 Volts Ro-IOKn
Offwt Voltagi Vt 1 .2 1.6 2 .6 Vote Vs- 10 Vote Rq«1Mo
.2 .6 2 .6 Volts Vs- 10 Vote Ra-10Kn
Valley Currant rv 1 60 25 MA Vs- 10 Vote Ro-1 Mn
70 26 MA Vs- 10 Vote Ra-10Kn
Gate-Anode Letfceai Currtnt kjAO 2 10 10 nA Vs- 40 Vote, Ta-25°C
100 100 nA Ta-75°C
Gati - Cathoda Leakaai Currant lOKS 3 100 100 nA Vs- 40 Vote, Va-0
Forward Voltagt Vf 1 1-5 1.5 Vote If -50 mA
Putaa Output Voltagt Vo 4 6 6 Volts
Pubs Vottaga Rata of Rita tr 4 80 80 mac.
Note: MEU21 it electrically si mi tor to 2N6027.

MEU22 it etectrically similar to 2N6028.
Igks
J <SR. an
$ _J
Figure 2 Figure 3
u
*rrK
/—WM ,
I T j
^
Figure 4
Figure 1
MEU21 MEU22
TYPICAL CHARACTERISTICS AT Ta-26°C (untan otharwiw spadfM)
s:::;::: ssbu;;:;, S5SS =;;;; SSi; ;,
iiiiiii anil!! urn 1

»:,(! air. :i
II mill llllll 1 JJHfl-'f MIltl'lfllnH
I iiiii iu'.^:«»it.i" mmt--

illl
• •^•iimi
fllllll
i
:
mMf**l J t™lf~
iii''53§ii!!i
:
E •iiii' T3mi! 5SS! :;l

in
=;:;; S= ii: = =si; ;.==

;
IIHHEtl III in
1 [0 — L IL. limit i ii
J
Ip VS GATE SOURCE RESISTANCE Iv VS "ON STATE" GATE CURRENT
too
5 w-io vo
" =iflO«p^^^
i
1
i
5 '
i
i .
0I
r
001
Ip VS TEMPERATURE AND Rg Iv VS TEMPERATURE AND Rg
1 1
"*" ::,«
1!
f
i, •>-i» (
* "~- g
|l»
^
3
;l r"
i ** f
} -^
i M0K \ 8
s
*
^ & ^> f
j
C-0
,
1
Vt VS TEMPERATURE AND Rg PULSE OUTPUT VOLTAGE

MEU21 MEU22
APPLICATIONS
frerisinn Retail aliun OstiMetor X!
The use of the diode 1N41S4 and 1 meg resistor at the gate Si! ih-
giveslow peak point current therefore reducing the shunting effect
of the PUT on Cr during the charging period. The diode also tem-
perature compensates Vac which drifts at about -2.5mV per °C. !!
li-
The circuit oscillates at 100Hz which is kept within 1% from ii-
-3r/C to 75"C.
Ten-minute Time Delay Relay
The PUT uses high gate source resistance

(1M-ohms) and draws negligible current from the RC
network during the delay time. When the SCS is
triggered by the PUT, the relay is energized. C is
short-circuited by a pair of relay contacts. This

condition ensures that accurate timing is repeatable
because C always charged from zero volt after
is
the circuit is reset. Time delay is approximately

10 minutes at R * 4.7 M-ohms.
MonostaMe Multivibrator
The PUT is normally ON. A positive

pulse at the input turns Qi on, C is discharged
rapidly through the saturation resistance of
the collector-emitter junction. The PUT be-
comes OFF. At the removal of the input
pulse, Qi is cut off. C is charged through R
towards +20V. When the peak point voltage
is reached, Q» fires and returns to the latching
state again due to the holding current

through R.
Warble Alarm Circuit
This alarm can be easily heard in noisy background.

Qa and Oj forms a tone generator in which the fundamental
frequency is modulated by the sawtooth output of Qi. L©
Tone frequency
Sawtooth frequency
* (500-800)Hz
* 2.5Hz
rs ws
J ft-
SCR Phase Control ii —w

| r
The conduction angle of the SCR is controlled by the

PUT oscillator which is synchronized from the a.c. line. This
ensures that the SCR is triggered at the same point on the
a.c. cycle each time.
The conduction angle of the SCR can be varied from

30° to 160° by using the 100 k-ohm variable resistor.
3.78.sao
-
MH7301 MH7302 MH7303

NPN HIGH VOLTAGE
HIGH FREQUENCY MEDIUM POWER TRANSISTORS
THE W7301, MH7502, MH7303 ARE RW SILIOOH CASE TO-220B

PLAHAR TOARSISTORS DESICVKD PC* HIGH VOLTAGE
AHS HIGH PREQIEHCT MEDIUM POWER APPLICATIONS.
THEY ARE CAPACABLE TO DISSIPATE 1.2$ WATT
WITHOUT ART HEATSIRK AT 25°C AIR. RB
* FOR TV
VIDEO OUTPUT STAGE
* fOB
HIGH TOWAGE CLASS A AUDIO AMPLIPIER
* POR HIGH VOLTAGE SWITCH DP TO 100mA / 250V
ABSOLUTE MAXIMUM RATI1ICS MB7301 MB7302 Mt7303

Colleotor-Baae Voltage CBO 160V 200V 250V
Colleotor-Smitter Voltage CEO 160V 200V 250V
Emitter-Base Voltage VEBO 5T
Collector Currant ic 100mA

Collector PMk Current (t <10mS) lCH 500mA
Total Power Dissipation (Tc425°C) *tot low
(TA «250C) 1.25W
Operating Junction & Storage Temperature Tj* Tstg -55 to 150»C
THERMAL RB8I3TARCE
Junction to Case «jc 12.5°C/W max.
Junction to Ambient °0» lOOOc/w max.
PtOt YB TA SAVE OPERATORS AREA (D.C.)

12 100
*t*»
—\ L
\
r?Z"
:
10
Skzi
30 Vjsj k
&~:
ptot 8 A ic Nfc Xi-
(W)
6
4
^H '&
e
(«A)
10
3 — naiyji
2
— *> *- |t
f%
Slnlr MB 730 3— ~~" -
50 „ 100 150 10 30 100 300 1000

T A (oc) VCE (V)
MH7301 MH7302 MH7303
BXBCTIICAL CHAIACTBMSTICS (*A-25°C unless otherwise noted )

PARAMim SYMBOL
M7301 KB7302 MH7303
OBIT tIST CMBITIOBB
HIV MAX KDT MAX MW MAX
Oolleotor-Bas* Breakdown Yoltafa BTcbo 160 200 250 IC-O.laA IX-O
Colleetor-Bteitter Breakdown LTcbo • 160 200 250 V IC-10nA Ib-0

Toltac*
Collector Cutoff Current 1 GBO 0.5 0.1 0.1 M <ari5or ig-o
Collector Cutoff Current I CK> 20 5 CB-150V IB-0

5 ^
r* TCI-200T Ib-0
Baltter Cutoff Current lEBO 0.1 0.1 0.1 ?* I(H>

jB-5*
Colleetor-Baitter Saturation «(sat)» 1.5 1.5 1.5 V 1 C -3C«A Ib-3«A
Voltage
Baae-Baltter Saturation Toltafs BB(aat)» 1.5 1.5 1.5 T Ic-30mA lB-3aA
B.C. Current Gain Rr • 40 40 40 IC-30mA VcE-lOT
Current Gain-Bandwidth Produot fT 50 50 50 MB* IC-30MA 7CS-20T
Colleotor-Baae Capaoitanee Cob 5 5 5 P? VCB-50T Ig-o

f-lMHs
• Pulee Test 1 Pulse Vidtb-O.JnS, Buty Cjrole-1*?
«FI ti IC fT 8 IC
1000 100
*A- 25°C
CB-207 -v
80
100
fT 60
(MH»)
40
10 100
IC (aA)
12.77.7300B
MH8100 MH0810
COMPLEMENTARY EPITAXIAL TRANSISTORS FOR 3-5W AF OUTPUT
TIM MH8100 (NPN). MH0810 (PNP) art complementary

silicon planar epitaxial transistors designed for the output
stages of 3-5 watt audio ampiif iari Thay ara alto suitable for CASE
switches up to 3A collactor currant. TO-220B
1
ABSOLUTE MAXIMUM RATINGS: F «„
Collector-Emitter Voltage |V
K - 01 VcES 35V
Collector-Emitter Voltage (Baa* Open) VCEO 30V
Emitter-Base Voltage Vebo 6V

Collector Current "c
3A
Collector Peak Current It <10mS) "cm 5A
Total Power Dissipation (T£<25°C) 'tot
12W
Junction Temperature Ti
150°C
8
Storage Temperature Range na -55to+150 C
ELECTRICAL CHARACTERISTICS (TA -26°C)
Collector-Emitter Breakdown Voltage LVceo 30 V l

c «50mA l
B "0
Collector Cutoff Current ccs 1 JlA VCE -35V VBE -0
Emitter Cutoff Current «6BO 1 »|A VEB -5V l

c -0
Collector-Emitter Saturation Voltage VCE<««) 0.8 V l

c
-2A l
B -0.2A
Base-Emitter Voltage Vbe 1 V l

c -0.5A VCE -2V
0,C. Current Gain •H FE1 40 240 l

c -0.5A VCE-2V
^£2 30 l
c -0.01 A VCE-2V
Current Gain-Bandwidth Product «T 30 100 MHz l

c -0.2A VCE -4V
*H H , it classified at follows. Group A : 40-80 Group B : 70-140
Group C > 120-240

MH8100 MH0810
TYPICAL CHARACTERISTICS (T A «2S"C UNLESS OTHERWISE SPECIFIED)
RATEO POWER ws CASE TEMPERATURE SAFE OPERATING AREA (D.C.)
•c
Plot
(W)
(A) ffiffl i
K IH8' 00 4 MH8100
16 k HOI 10"
I
MH0810
12
1 - = j:'
1
Nr—
8
C *
—
\
0.4
n 0.1
100 200 10 40
TC(°C) VC£<V)
CURRENT QAIN
D.C. Vbe and Vce,,.,,
vt COLLECTOR CURRENT vi COLLECTOR CURRENT
h fe 1.0
160
MH( 81,0 J
(V)
08
-VBE
I
©vCE 2V|
III
Jj mw
IDS&$>
li
120 06
!j! On l
\\\
80
1
04 I
£ 1&-
Vc
Pu3 se
>V
bat 'A£
¥
III
40 0.2
Vce< sat)
1 >
-u -10l| \—z
ll! 1
Pulse Tei
L...I 1 1
t
0.01 0.1 10 0.01 0.1 1 10
'C(A) 'C(A)
MH8100 MH0810
APPLICATION 1: 3W OTL AUDIO AMPLIFIER
*+Vcq
1 MF
fNPUT° P-
4 ohms
All resistances in ohms. RV is adjusted to 100-ohms

at which quiescent collector current of Q, - 5mA.
TRANSISTORS
MH8100, Hfe GROUP B to C, mounted on heat sink.
MH0810, H FE GROUP B to C, mounted on heat sink.
BC238, H FE GROUP B.
Q4 BC338, any H FE GROUP.
BC308. H FE GROUP B to C.
CIRCUIT PERFORMANCE
Supply Voltage 13.2V (16V 9 no signal)
Max Undistorted Output 3W 9 IKHz

Input Sensitivity 84mV 9 3W output
Input Impedance 90K ohms 9 IKHz
Frequency Response 37Hz to 55KHz, -3dB
Total Harmonic Distortion less than 1% 9 2W output, HCHz
Current Drain 42mA 9 no signal

440mA 9 3W output
MH8100 MH0810
APPLICATION 2: BW OTL AUDIO AMPLIFIER
+Vcc
1(*iF
INPUT
8 ohms
All resistances In ohm. RV Is adjusted to lOOohmt it T7TT

which quiescent collector currant of Q, - 6mA.
TRANSISTORS
Ql MH8100, H F GROUP B to C, mounted on heat sink.
°2 MH0810, H FE GROUP B to C, mounted on heat link.
BC238, H FF GROUP B.
BC338, any H FE GROUP.

BC306, H FE GROUP B to C.
CIRCUIT PERFORMANCE
Supply Voltage 22V <25V @ no signal)
Max Undittorted Output S.6W 9 IKHz

Input Sensitivity 140mV e) SW
Input Impedance 105K ohms 6 IKHz
Frequency Respond 33Hz to SSKHz, -3dB
Total Harmonic Distortion less than 2% 6 SW output, IKHz
Currant Drain 32mA 6 no signal
380mA @ BW output
1.78, 8100C, 0810C

MH8106 MH8108 MH0816 MH0818
NPN PNP SILICON PLANAR EPITAXIAL POWER TRANSISTORS
TEE MH 8106, HH 8106 (HP*) AH9 MR 0816, CASE T0-220B

MB 0818 (PNP) ARE SILICOH PLARAR EPITAXIAL
TRAHSISTORS OP COMPLEHERTARY CHARACTERISTICS.
THEY ARE SUITABLE FOR THE DRIVER STAGES OP
50-50WATT AUDIO AKPLHTERS ARD MEDIUM SPEED
SWITCHEB UP TO 1A COLLECTOR CURRERT.
MR 8106 (RPR) MH 8108 (RPR)
Collactor-Baaa Voltaga VCBO 70T 90V
VCEO 60V 8OT

Collaotor-Saittar Voltage
VKBO 5V
Saittar-Baaa Voltaga
CollMtor Currant IC 1A
2A
Collaotor Peak Currant (t(10aS) I CM
• Tc <25°C Ptot low

Total Power Dlaalpation
• TA «25°C 1.5W
Tj 150*C
Junotion Temperature
Storage Temperature Range Tatff -55 to +150°C
SAFE OPERATING AREA (l).C.)

tot A
S
t
«
-^
-&
^
*' , .
L..v «-
4
N&-
1 V
:==#&-
1
100 too
t
aCc)
MH8106 MH8108 MK0816 MH0818
KLKTRICAL CaUUCTWEWICS (*A-25°C unleaa otherwiae noted)
paramirb STMBOL HOI TYP MAX OBIT TB5T COKDITIOBB

Colloetor-Baae Breakdown Voltage wCB0 IC-0.1«A Ib-0
MB 8106, MB 0616 70 T
MB 8108, MB 0618 90 T
Colleotor-lnltter Breakdown Voltage WCBO * IC-lQuA Ib-0

MB 8106, MB 0816 60
MB 8108, MB 0818 80
Collector Cutoff Currant ICBO 0.5

^ YCB-60T Ij-0
bitter Cutoff Current ISBO 1

f* V«B-5V IC-O
Colleotor-Inltter Saturation Voltage CB(aat)« 0.5 I<»500nA lB-50nA
Baee-lnitter Voltage 7bb « 1 T lC-500mA TCB-2T
D.C. Current Gain- (Bote) BfBl • 40 240 IC-200aA 7CB-2T
HFE2 * 15 IC-1A V«-2V

Current Cain-Bandwidth Product fT 50 100 MBs IC-100nA Vd-4V
Colleotor-Baae Capaeitanoe Cob CB-10V Ij-0
MR 8106, MH 8108 12 P? f-lMBi
MB 0816, MB 0818 18 PF
• Pulae Teat t Pulae Vftdth-0.3»fl, Duly Cjrole-1^

Bote i Br 1 i» elaaaified aa followa . Group A t 40-80 Group B i 70-140
Group C t 120-240
Bf8 *» *C YCB(aat) ft
TBB n l
C
l
G U) *c(a)
12.77 •8100B.0810B
MH8500 MH0850
COMPLEMENTARY EPIBASE TRANSISTORS FOR 20-25W AF OUTPUT
THE MH 8500 (NPN), MH 0850 (PNP) ARE

CASE TO-220B
COMPLEMENTARY SILICON FOVBi TRANSISTORS
FABRICATED BT ADVANCED EPIBASE TECHNOLOGY.
THEY FEATURE MATCHED COMPLEHENTART
CHARACTERISTICS, HIGH FREGjtJENCY RESPONSE,
GOOD SATE OPERATING AREA AND ARE BEST
SUITABLE FOR THE OUTPUT STAGES OP 20-25W
HI-PI AMPLIFIERS. TRET ARE ALSO SUITABLE
FOR SWITCHES UP TO 4A COLLECTOR CURRENT. BCE
ABSOLUTE MAXIMUM RATINGS For P-n-P <*«*»». voK«B««nd currant vclues an nagnKn
Collector-Emitter Voltage (TBE-O) VCES 70V

Collector-Emitter Voltage (Ib-O) VCEO 60V
Emitter-Base Voltage 7EBO 5V
Collector Peak Current (t<LOnS) ICM 8A
Total Power Dissipation (Tc£25°C *tot 40W
)
Junction Temperature TJ 150<»0

Storage Temperature Range Tstg -55 to +150OC

PARAMETER SYMBOL MIN TIP MAX '
WIT TEST CONDITIONS
Colleotor-Emitter Breakdown Voltage LVceo • oO V IC-lCOmA Ib-0
Collector Cutoff Current ICES 10 VCE-70V Vbb-0
J*
Emitter Cutoff Current IEBO 10 ^ VEB-5V Ic-0
Collector-Baltter Saturation Voltage CE(aat)» 0.4 1.2 V IC-3A IB-0.3A
Baae-Emltter Voltage VBE * 1.05 1.5 V IC-3A VCE-2V
B.C. Current Gain (Note) BPB 1 • 40 240 IC-U VCK-2V
HPE 2 * 30 IC-O.QU VCE-2V
HPE * 15
3 IC-3A VCE-2V
Current Gain-Bandwidth Product fT 5 MHs IC-0.5A VCB-4V
• Pulse Teat t Pulae Width-0.3»S, Duty Cjrcle-l«J

Note t BpE 1 is claaaified as follows Group A t 40-80 Group B 1 70-140
Group C t 120-240
MH8500 MH0850
TA-25*C unless •thcrvia* noted)

(
P
t«t
s h SAFE OPERATING AREA (ll.C.)
10
50 =Tb-250C ;
40
*
\y&•
t'
* 20
0.3
0.1
100 200 10 30 100
t
a(°c)
T«(T)
HfE * IC YCE(»t) YBB * X

C
A-
160
1
111]
140
120 II
HFElOO __™
''
80 ^*-
-§B
nSl
60
>
\
40
III
20 la 1
7.IIH III
C
0.01 0.1 10
x
c (a)
12.77.85001.06301
MH8700 MH0870
COMPLEMENTARY EPIBASE TRANSISTORS FOR 10-15W AF OUTPUT
The MN8700 (NPN),MH087Q (PNP) are complementary silicon

power transistors fabricated by advanced epbase technology.
They feature matched complementary characteristics, high CASE
frequency response, good ufe operating area and are best TO-220B
suitable for the output stag* of 10-.15W Hi-Fi Amplifier!. They
are alio suitable for switches up to 4A collector current
ABSOLUTE MAXIMUM RATINGS: For p-n-p devices, voltage and current values are negativ
Collector-Emitter Voltage (V
BE • 0) VCES 60V
Collector-Emitter Voltage (Base Open) VCE0 50V
Emitter-Base Voltage VEB0 5V
Collector Current l
c 4A
Collector Peak Current (t <10mS) ^ 7A
Total Power Dissipation (T^<25°C) P^,, 30W
Junction Temperature T, 150°C
Storage Temperature Range T-. -55to+160°C
ELECTRICAL CHARACTERISTICS <TA - 25°C)
Collector-Emitter Breakdown Voltage LVC EO 50 V lc- 100mA l -0

B

'CES 10 /IA VCE - 60V VgE-0

'ebo 10 JlA VEB - 5V l
c -0
Collector-Emitter Saturation Voltage VCE(satl 0.33 0.8 V lc - 2A l

8 -0.2A
Base-Emitter Voltage Vbe 0.82 1.2 V l

c - 1A VCE -2V
* H FE1
D.C. Current Gain 40 240 l
c - 1A VCE -2V
H FE2 30 lc - 0.01A VCE »2V
Current Gain-Bandwidth Product *T 5 MHz lc - 0.5A VCE »4V
*H FE , is classified as follows. Group A : 40-80 Group B : 70-140

Group C : 120-240
. V 1
MH8700 MH0870
TYPICAL CHARACTERISTICS (TA -2TC UNLESS OTHERWISE SPECIFIED)
RATED POWER vs CASE TEMPERATURE SAFE OPERATING AREA (D.C.)
ptot E==*#t
'c w
(W)
(A)
40
MH8700 4
"Ml-1087 )
30
T C «=25°C
i ^
+ "T
20 T T
Tj
04
T
to T
I
01 J
100 200 4 10 40
'C(°C) VCE(V)
CURRENT GAIN
D.C. VK AND Vce,,,,,
vs COLLECTOR CURRENT vs COLLECTOR CURREN1
1.0 I
!l
HF E •
I I 1 111
|-
(V) mi
Tltj
160 0.8
Zj MlH8700
1
Ml 10870
-Ti
M^ III!
!
120 — MNub, T 0.6 1

!
M
1
80 j§§W\ 0.4
|
"i\
M I
40 Vcic-2V. 0.2 — CE(tat) •. c-' 0I B

Pul i« Tee *l
i I
II .,
Jill
.nil
1
1
Pul
-
• 1
'
1
M
1
01 0.1 10 0.01 0.1 10

'C(A) 'C(A)
MH8700 MH0870
APPLICATION 1: 10W OTL AUDIO AMPLIFIER
+Vcc
10*F
INPUT
8ohmt
All resistances in ohm. RV It adjusted to lOOohms

at which quiescent collector currant of Q, 5mA.
TBANttrrOHl
MH8700. H re GROUP B to C, mountad on heat fink.
MH0B70, H FE GROUP B to C. mountad on haat link.
BC238. H FE GROUP B.
04 BC337, With X-67 haat (ink mountad on chassis.
a* BC306, H FE GROUP B to C.
CIRCUIT PERFORMANCE
Supply Voltaga 32V (37V • no signal)
Rated Output 10W

Max Undistortad Output 11.5W
Input Sensitivity 200mV 10W output
Input Impedance 110 Kohms 1kHz
Frequency Response 30Hz to 70KHz, -3dB
Total Harmonic Distortion lees then 0.6* 9 10W, IKHz
Current Drain 50mA no signal
560mA 10W output

MH8700 MH0870
APPLICATION 2: 1BNV OTL AUDIO AMPLIFIER
47K »+Vce
-WH-
ISK :
' 47|iF
10|*F
Hook RV
gU.
:22mF
IOOOjiF
47K ^-^r iw
JVVW-
input' It- '"^jry +
" 22Q^F 220pF- « ! 470 •ImiVi
10OK*
3.
f 100
©*~^r
All i-MtaanoM in ohm*. RV it adjustad to 1.2K ohim
at which quiatcant collector currant of Q, « 6mA.
TRANSISTORS.
Qi MH8700, H FE GROUP A to B, mountad on heat link
Qa MHC07O. H FE GROUP A to B, mountad on haat (ink
Q3 BC182. "« GROUP A to B.
Q4 BC212. H« GROUP A to B.
Q5 BC238. H« GROUP B.
Qe BC237, Hf« GROUP A to B.
Q7 BC307, »ft GROUP B.
QRCUIT PERFORMANCE
Supply Voltage : 38V (44V • no signal)
Ratad Output : 16W

Max Undittortad Output : 16.GW
Input Santitivity : 230mV 9 15W output
Input Impadanca : 100Kohms@1kHz

Frequency Raaponaa : 17Hz to 56kHz, -3dB
34Hz to 36kHz, -IdB
Total Harmonic Distortion : I*m than 0.1% • 16W output, 1KHz

latt than 0.3* 9 16W output, lOKHz
Currant Drain : 20mA • no signal
630mA 9M6W output
1.78, 8700E, 0B70E
ML555
PRECISION TIMER
FEATURES DESCRIPTION
• fining frost microseconds through hours Tha ML 535 monolithic integrated circuit is a
• Monestable and uUU* operations highly stebla timar for pracision timing and oscillator
• Adjustable duty cycle
• Currant output can Mure* or (ink ZOOavA applications. Additional terminals ara providod for
• Output can drive TTL triggering or resetting if desired. As a timer, the
• Temperature stability of O.OOS% par °C ML 555 is capable of producing accurate time delay
• Normally on and nonnally off output
from microseconds through hours. As an oscillator,
APPLICATIONS the free running frequency and the duty cycle ara
both accurately controlled with two external resis-
• Precision timing
• Pulse gonaration tors and one capacitor.
• Sequential timing
• TiaM delay gonaration
• Pulso width modulation
The ML 555 may be triggered and reset on
• Pulto position Modulation falling waveforms and the output can drive TTL
• Missing pulsa dotoctor circuits with source or sink current up to 200mA.
BLOCK DIAGRAM SCHEMATIC DIAGRAM
ORDERING INFORMATION PIN CONFIGURATIONS (TO-vaw)
Package Temperature Order

Type Range Number
obwQ a
Mini DIP o°Cto+7o°C ML555V
TO -99 o°Cto+7o°C ML555T
Mini DIP TO -99

ML555

Supply Voltage + 18V
Power Dissipation 600mW
Operating Temperature Range 0°C to +70°C
Storage Temperature Range -65°Cto + 150°C
Lead Temperature (Soldering, 60 seconds) +300°C
ELECTRICAL CHARACTERISTICS (T A = 25°C, V Cc = +5V to +15 unless otherwise specified)
PARAMETER MIN. TYP. MAX. UNITS TEST CONDITIONS

Supply Voltage 4.5 16 V
Supply Current Low State Output, Note 1
3 6 mA Vcc-SV.R,.--
10 15 mA Vcc-15V, R L _o>
Timing Error R A R..1K0 to lOOKft.
,
C-0.1..F,
Initial Accuracy 1.0 % Note 2
Drift with Temperature 50 ppm/'C
Drift with Supply Voltage 0.1 %/v
Threshold Voltage 2/3 xVoc
Trigger Voltage 1/3 xV«:
Trigger Current 0.5 mA
Reset Voltage 0.4 0.7 1.0 V
Reset Current 0.1 mA
Threshold Current 0.1 0.25 mA Note 3
Control Voltage Level 2.6 3.33 4.0 V Voc-5V
9.0 10.0 11.0 V Vcc-15V
Output Voltage (Low) Vcc-5V
0.25 0.35 V l** - S.OmA
Voc-15V
0.1 0.25 V Uk - 10mA
0.4 0.75 V U, - 50mA
2.0 2.5 V U* - 100mA
2.5 V Uk - 200mA
Output Voltage (High) l««c - 100mA
2.75 3.3 V Vcc-5V
12.75 13-3 V Vcc-15V
L„ - 200mA
12.5 V Vcc_15V
Rise Time of Output 100 ns
Fall Time of Output 100 ns
NOTES:
1 Supply current when output high is typically 1 mA less.
2. Testedot Voc-5Vond Vcc_15V.

3. This will determine the maximum value of R A + RB . For 1 5V operation, the maximum total R
ML555
SUPPLY CURRENT
VS SUPPLY VOLTAGE
70*C
6
25 C,
O'C
££ 4
Tg
"I? ?c
ai 0.2 0.3 10 19
LOWEST VOLTAGE LEva OF TUOCa PULSE - wmY votTACf - wfa
Vec -S 1 Y« - OV
O'C
*2» J
[
*70* +7 O'C 25'C
r
H-
—
12 5 10 20
1
DELAY the VS PROPAGATION DELAY VS

SUPPLY von ACE VOLTAGE LEVa OF TRIGGER rjue
1.015
1.010
1 i
§„.
i 100
_ ^£
|
+7 >"C
0.990 « »
5 1 1 5 X OJ 0.4
SUPPLY VOLTAGE - ~fc AMMNT TEMPEIATUK - >C LOWEST VOLTAGE LEVa Of THGGSt PULSE - JWec
1 —
ML555
APPLICATION INFORMATION
Monostoble Operation AstoUe Operation
Whan riw timeroperated at a monostobi* multivibrator,

it When Hi* timer is operated in the astabl* mode, two
on* external capacitor, C, and on* external resistor, R A> external resistors, R Aand R B , and one external capacitor,
Whan C, are used as shown in Figure 3. With this connection,
or* uwd as shown in Figure 1. th* trigger input is
it will trigger itself ond free run as a multivibrator. Th*
reduced below 1/3 Vcc, Hie tinier internal flip-flop is set.
external capocitor charges through Ra + Rb and discharges
This releases the short circuit across the external capacitor
through Rb only. Thus the duty cycle may be precisely
and the output goes HIGH. The voltage across the ca-
set by the ratio of these two resistors.
pacitor begins to rise exponentially with the time constant In this mode of operation, the capocitor charges and
RA G When the capacitor voltage reaches 2/3 Vcc, Hie discharges between 1/3 Vcc and 2/3 Vcc. As in Hw
internal comparator resets the flip-flop and the external triggered mode, the charge and discharge times, and
capacitor, C is rapidly discharged provided Hie trigger therefore the frequency are independent of the supply
voltage is returned above 1/3 Vcc The output is now in voltage.
LOW store and a new riming cycle may be initiated. The The charge time (output high) is given by
time mat the output is in the HIGH state is given by 1.1 t, =0.693 (Ra + Rb) C
RA C or can be taken directly from Figure 2. Both the And the discharge time (output lowl by:
t2 =0.693 (Rb) C
charge rate and internal threshold are directly proportional
supply voltage. Thus, me timer output pulse Thus the total period is
to Hie Vcc
width is independent of Hie power supply voltage. a LOW
If
T=t, + t2 =0.693 (Ra + 2Kb) C
is applied to the reset input, the output is forced LOW and The frequency of oscillation is:
1
the external capacitor discharged regardless of Hie other I.-
inputs.
(R A +2R.)C
When the reset function is not in use, it is recommended The duty cycle is
PIN 4 connected to Vcc *° avoid any possibility of

that
D=-
false triggering. Ra+2R b
Fig. 1 Monostoble Operation Fig. 3 Astable Operation
—— I* t.m Ac
1
^ f
'/
/
f
7f '
MO!
I* MO I W
/ MB I M
tm ofi»v numrr mem
FJg.2. Momttable Pub* Width. Fig. 4. Asttble Free Running Frequency.
3.78
ML1060
SIX-DIGIT LED DISPLAY DRIVER
SCHEMATIC DIAGRAM
CI C2 C3 C4 C5 C6
general description Bl B2 B3 B4 B5 B6
The MLlOftO Is a monolithic silicon chip

consisting of six NIK common-emitter
transistors. It features low leakage, low
VCE(sat), small chip sise and CMOS compatible.
The ML1060 is designed for use as an LED/

CMOS digit driver interface in electronic
watch systems and calculators using common- CHIP
cathode multiplexed LED displays. Wire bond- D DDDDDD

ing by hybrid assemblers is facilitated by
E Bl B2 B3 B4 B5 B6
the large, well spaced 5x5 mils bonding pads.
I
.042'
For silicon chip in plastic dual -in-line S CI C2 C3 C4 C5 C6

package, please order part- no. MU050-DIP.
DDDDDPD
- .059" *"
DIP TYPE (TCP VIEW)

ABSOLUTE MAXIMUM RATINGS (DIP TYPE)
Any one transistor »

nn n n nnn
E B1 02 B3 B4 B5 B6
Collector-Knitter Voltage OT
Collector Current 300mA
Base Current 30mA
Collector Dissipation
Total Package Dissipation

(
TA425*C)
TA<25»C)
500mW
750mW
uuuuuuu
S C1 C2 C3 C4 C5 C6
(
Note t The S-terninal (substrate)
Operating Tomperature Range -25 to 85*C must be connected to a
Toltage which is more
Storage Temperature Range -56 to 150*C negative than any collector
voltage.
ML1060
EUCTBICAL CHABJCTIKISTICS FEB TBANSISTOB (*i«25»C)

PABUHTIR SYMBOL BIN TIP MAX UNIT TBS* CONDITIONS
Collector-Bnitter Breakdown Voltage Wcio • 17 V K>1«A IBbO
faitter-Be.se Breakdown Voltage BVgBO 4 7 V IB-0.1b* ICO

Collector Cutoff Current ICEB 0.28 VCB-4V BBB-10KA
J*
Collector-Bnitter Saturation Voltage VCB(eat) 0.25 0.4 V IOOaaA lB>6.3nA
Base-Bnitter Voltage VBB 0.87 1.0 V IB-la* VCB>2.4V
D.C. Current Gain BR 20 85 IC*83n* VCB>2.4V
Current Gain -Bandwidth Product 't 300 m% K>50nA VC£*2.4V
Output Capacitance Cob 11 p* VCB»2V IB-O

f-lMHs
TYPICAL CBUMCTBBISTICS (*A-25»C)
Hpg re ic VCE(eatj vs Ic
1.0
=ffVCB«2.4V
raise B(eat)
BFK
(V)
0.3
100 0.1
80
30 0.03
1 IC-1 OIB
1 1
Pulae 1 est
10
10 100 500 10 100 500
IC (-A) IC (-A)
3.78
ML2005
5V-200MA POSITIVE VOLTAGE REGULATOR
CASE TO-39 CASS T0-22QB

FEATURES
* LOW INPUT VOLTAGE REQUIREMENT
* LOW OUTPUT IMPEDANCE 1. Input
2. Output
* OUTPUT SHORT CIRCUIT PROTECTION 3. Ground
* HIGH TEMPERATURE. STABILITY
132
* AVAILABLE IN CASE TO-39 / TO-220B
ORDER PART NO. ORDER PART NO.
ML20O5C ML2O05P
ML2005C ML2005P
Input Voltage VI 20V 20V
Total Power Dissipation (Tc^25°C) Ptot 5W 12W
(Ta«25°C) 0.9W 1.5W
Junction Temperature 175°C 150oc
Operating Temperature Range Top -25 to 85°C -25 to 85°C
Storage Temperature Range Tstg -65 to 175°C -55 to 150°C
THERMAL RESISTANCE
Junction to Case 30°c/w max. 10.4°C/W ">«•
167°C/W max. 83.3°C/W ">**•
Junction to Ambient
TA«25°C unless otherwise noted)
PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITIONS *
Output Voltage v 4.5 5 V VI-7V Io«15C«A

4.75 5 5.25 V Vl-lOV 10- 150«A
Load Regulation aV 20 100 mV Vl-lOV Io-5-15C«A

Line Regulation aV 20 100 mV Io-150rt VI-7.5-15V
Quiescent Current X 20 30 mA Vl-lOV io-o

Q
Output Short Circuit Current l SC 220 300 raA Vl-lOV Vo-0
Ripple Rejection (f-lOOHz) aV]/aVo 38 55 dB l0-150i»A Vi-9-HV
Output Resistance 0.1 ohm Vi-lOV I - 15C«A
*0
Output Noise Voltage En 40 uV Vl-lOV f-lOHz-lOOKHz
I0-15C«A
Temperature Coefficient AVo/kT A 0.85 mV/oc Vi-lOV Io-5mA

Ta=0 - 70°C
Test duration less than 10 Sec.

ML2005
TYPICAL CHARACTERISTICS (T A -250C u^m otherwise noted)
H ML 2005~| <i-
Test duration less than lOseo. C x and Cj, greater than luP.
TOTAL POWER DISSIPATION QUIESCENT CURRENT

vs AMBIENT TEMPERATURE va INPUT VOLTAGE
2.0
No Heat Sink 40
io-o
1.5 30
tot 1.0
^ a* 20
(V) PCK. Q
(A)
0.5 10
20 40 60 80 100
5 10 15
T A (°C) VI (V)
OUTPUT VOLTAGE OUTPUT VOLTAGE

vs OUTPUT CURRENT s INPUT VOLTAGE
6 5.4
5 1
— ^- 5.2
*o
4 ^ V 5 '°
IO-lOOmA
Iq-2000A
3
(v)
V I-6V
///
^y/iov 4.8 1
2 1
4.6
1
/ //
/ // 4.4
3 200 300 4 8 12 16 20
*0 (mA) V I (V)
2.78
ML2005
CIRCUIT APPLICATIONS
5V / 200mA OUTPUT
10V\~ ML2005P
(7V minM ; 200mA
I OOOu 100^
Load
5.8V / 200mA OUTPUT
10.5V(' *_i ML2005P 2-,

(7.5V min)v
'200mA
OOu Load
1000i SiJ [ 1
5V / 1A OUTPUT
CX754B/C
mounted on heat sink
11VWJ
(7.8V min)|
2200u 1
a
5-ohm
ML2005C 2-;
ioqu
|ioad
5V / 2A OUTPUT
CX705
mounted on heat sink
12V(~)
(8.5V minjf
i
f L2005C 2J
100A?
+
fo °^
<2A
f 0ad
Si
4700u
ML9400
VOLTAGE-TO-FREQUENCY CONVERTER
DESCRIPTION
The ML9400 ia a low cost voltage-to-frequency converter combining Bipolar and CMOS
technology on a single chip. The converter accepts a variable analog input signal
and generates an output pulse train whose frequency is linearly proportional to the
input voltage. A complete V to F system requires addition of only 2 capacitors, 3
resistors, and 2 supply voltages. F to V conversion is also possible.
FEATURES
• 10Hz to lOOkHx operation
• ± O.Olf typical linearity to 10kHz
• ± 25PPM/»C typ. gain temperature stability
• Open collector output
• Output can drive 6TTL loads as well as CMOS
• Pulse and square wave outputs
• Programmable scale factor
• Low power dissipation! 27mW typical
APPLICATIONS
• Precision V/F Converters
14-Pin Plastic DIP
» Precision F/V Converters
• 13 bit A/D Converters
• nP data acquisition
• Ultra long time interval integrator
• Digital scales
• Thermostats
• Digital panel meters
• Phase locked loops ABSOUJTE MAXIMUM RATINGS
• Remote control VDD to Vss 18V
• FSK data transmission IDJ ± 10mA
• Analog data transmission & recording Iref ± 10mA
• VCO Vflmax - VO COM 18V
• Communications scrambler Peep - vssl 1.5V
• Sound in Video Games Operating temp. 0»C-70»C
—
ML9400
VOLTAGE TO FREQUENCY CONVERSION
TYPICAL ELECTRICAL CHARACTERISTICS
Bnless otherwise specified, VPDboV, VSS=-SV, VREPg-6.2V BfllASalOOK Sk , TA=25°C
t
INHIT CIHCUIT Iin i lOnA C Vin = 10V, Bin Ilia
Vio(offBet) t <+ 10mV • 0°C < Ta < ?o»c

Vl0 (drift) « <± 6PPW/»C • 0»C <Ta <70°C
SUPPLY BBQUIBEtiENTS IW> i 2aA
ISS l -1.5mA
OUTPUTS VOL « 0.4V O I « 10mA
CONVERSION ACCURACY Linearitjr(lOkHs)»t 0.01* Vi n s to 10V
(lOOkHz)s + 0.1)1 • Vin - to 10V
Full Scale
Temperature i± 25PPM/°C « 0°C <Ta <70»C
Stability
TYPICAL APPLICATION
10Hz to 10kHz V/F CONVERTER
EQUATIONS
OUT in X 1
<w C
«F»
R. - V. (MAX)
n n
IOuA
8« •£ »
8|M S I20K
JC
«F <C ,NT <5C WF
For opt lawn Stability
C
'.NT** * «F
"ssO 6» tlr
-5» -«.!Y
NOTES
1. To adjust f»iii, set V ln=10»V and adjust the 100K offset for lOHs out.
2. To adjust fmax, ««t Vi„=10V and adjust Bin or VREF for lOkHs out.
3. Output waveforms : 6V
GHD L_T7 l_P- 6nS ** LJ

I
F
*«*
I* four A
5V
GND 1 I 1 IfiEI
2
4. To increase fOUT(MAX) to 100kHz change Caff to 20pP and CnjT to 80pF.
5. For high performance applications use high stability components for
Bin, CBEF, and
VBEP. (metal film resistors and glass film capacitors.) Also separate the
output
ground {Pin 9) from the input ground (Pin 6).
ML9400
FREQUENCY TO VOLTAGE CONVERSION

INPUT Frequency 10Hz to 100kHz
1
Voltage in -0.21, 40.2V
ax -2V, +Vw>
Waveform Sine, Triangular, Square, or Pulse
Duty Cycle 0.5nS ain negative pulse width
S.OnS ain poaitiTe pulse width
Impedance >10MO(FET INPUT)
-1
OUTPUT VQUT Bange to 4V (Vdd )
VOUT m (vhef x chef x bint] fdj
Response Tiae bint * c djt

Hippie Inversely proportional to CDJT and input frequency
Loading 2KAain
ACCURACY Better than O.IJ* FS
k
HTNI
M— M
—d£
» #
4>-~-
1
«lt»
f c
in
f
*»eeepJL
«iw T C
'" V,
|ewwrt|
1 i
OC-IOICHx F/Y CONVERTER
NOTES
1 . The input signal auat cross through sero in order to trip the comparator. In order
to orercoae the hysteresis the amplitude anat be greater than ±100aV. If the com-
parator input roltage exceeds -2.8V then the Op Aap output will go to its maximum
positive output voltage for the duration of the overvoltage.
If the input voltage has a wide amplitude variation then a pair of back to back
diodes aay be used to Unit the voltage to ± 0.7V.
n t
Fine—ÂAAA-
ML9400
If only a unipolar input signal (Fin) is available it
is recommended tbai either an
offset circuit using resistor be used or that the signal
be coupled in via a
capacitor.
FIN -wv-
rj}{_
V-
c rt
The output voltage of the Op Asp t, referenced
to Pin 6 (GND). So if Pin 6 is used
t n" ine tbe CM,P* pator threshold the Op A>p output
u^! ! reference will also be
sail ted.
2. For lOOKHz maxima input BjN-r should be decreased to 100KA.

3. f and fj/2 are not used in the F/V .ode. However, these
outputs may be useful for
some applications, such as a buffer to feed additional
circuitry. f will then
follow the input frequency waveform; except that fo will
go high 3iis after Fiji goes
nign. fo/2 will be square wave with a frequency of
one half f .
If these outputs are not used then Pins
8, 9, and 10 may be left floating or connect-
ed to ground.
H +-0.5;iS min \. 1_ SpS min
input
] f i_r i_r
-4 |~-Delay»3uS
r
v»L
SINGLE SUPPLY F/V
...
I
•7K
"ff!
k fwwt|
*jWrfT
l«WttT| —
V.
o
*«P
TH
*S» *ll»5
NOTES :
U
SlttSISV!
restricted to T ref «!enc « d to 5 ' 1V <" *)• *»* i»P«t signal must therefore be
be greater than 3 volts (Pin 6 -2V) and less than 10
to 16V (Vdd).
I
t
t
L fn^ g i 8 C U ed heB
(Sn l lj and gn 6! *
rMl " t0r (l0< *° "** ) * *
—
Pl "« d b « tTO* «
2. The output will now be referenced to Pin 6 which
is at 6.1V (V Z ). For frequency
1VA "eter Wlth M,UtM
PinsYSia 12 " * * " erie " 8callng can b « Pl««* «ross
3.78
MPS3638 and similar types
SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES
CASE T0-92A
THE FOLLOWING TRANSISTORS ARE SILICON PLANAR EPITAXIAL TRANSISTORS
FOB USE IN GENERAL PUBPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING UP
TO 500aA COLLECTOR CURRENT. THEIR MAXIMUM POWER DISSIPATIONxSOOaff
• TA<26*C.
EBC
D.C . CHARACTERISTICS (TA=25»C For p-n-p devices. oltage and current values are negative
BWcBO LVCEO BVgBO ICES • VCE HFE 9 icAce VCE(Mt) ft VBE(sat) • IC/IE
TYPE o
a. (v) 00 («*) (v) (-O(v) (v) (V) (m)(«)
in in in MX in-aax max in-aax
20- 10/10
UPS3638 PNP 25 25 4 35 • 16 30- 9 50/1 0.25 -1.1 50/2.5
20- 9 300/2 1.0 0.8-2.0 300/30
80- 9 l/lO
0.25 -1.1 50/2.5
MPS3638A PNP 25 25 4 35 15
100- 9 10/10
100- 60/1
1.0 0.8-2.0 300/30
20- 9 300/2
FN 3641 NPN 60 30 5 40-120 9 160/10

50* 50 0.22 150/15
FN 364 2 NPN 60 45 5 15- 9 600/10
100-300 9 150/10
PN3643 NPN 60 30 5 609 60
25- 9 600/10 0.22 150/15
40- 9 O.l/lO
FN 3644 PNP 45 45 5 35 • 30 80- 9 1/10 0.25 -1.0 50/2.5
100- 9 10/10
0.4 -1.3 150/15
80-240 60/1
PN3645 PNP 60 60 5 35 9 50 100-300 9 160/10 1.0 0.8-2.0 300/30
20- 9 300/2
PN6128 NPN 15 12 50 9
20- 9 10/10
3 10 0.25 -1.1 150/15
35-360 9 50/10
PN5142 FNP 20 20 4 60 9 12
30- 9 60/1 0.5 -1.5 50/2.5
15- 9 300/10 2.0 0.8-2.5 300/30
A.C. CBAHACTEBISTICS
»•««««»•»»»».»»* (TAs25*C)
x ~=«» **J *»»»» ._
. _
Oven .tfuiiM cattail •*« an wgaM.
TYPE
ft • iqAce
(MH,)(^)(V)
Cob
<pf)
VcbbIOV
lB=0
Cib
(pF)
M
• VEB=0.5V ton
(nS)
*off
(nS)
NOTE
in ax ax ax ax
MPS3638 100 50/3 20 65
75 170
MFS3638A 150 9 50/3 10 25
FN 3641 150 © 50/5 lBl«30a&

FN 364 2 150 • 50/5 8
FH3643 250 ff 50/6
t ff • lC»300a*
lBl-30a4
FN 3644 -IB2=30aA
200 9 20/20 8 25 40 100
FN 3645
FN5128 150 © 50/5

10 30 100 200
FN5142 100 9 50/3
(Ta»25°C unlesa otherwise noted)
v. to.
VBE(aat) * VcE(aat) » IC
1.2 Pul ae Tei t -nn
1.2
IC-
nil
0.8 III
VBB< aai I-
(V)
'0.4 0.4
:Sttt
VCE
^ *>.
10 100 1000 10 100 1000

IC («A) IC (-A)
fT I( Cob to VcB
Y» 16
600 '
Vc EklOV IE=0
H
II'
_
nun f IK Hz
12
400 'hi 1
Cob
fT
(MH.)
200 1 (pF) 8
,
«tt
w»r
.
mil
10 100 1000 5 10
*C (-A) VCB (V)
3.78.06 10B.6100B
MPS4354,5,6 PN3567,8,9
COMPLEMENTARY
CASE TO-02A
THE MPS4354, 5, 8 (WP) ABB PN3567, 8, 9 (NIK)
ABE COMPLEMENTABY SILICON PIANAB EPITAXIAL
TBANSISTOBS DESIGNED FOB AF MEDIUM POWEB AMPLI.
FIEBS AND MEDIUM SPEED SWITCHING APPLICATIONS.
BBC
WP NPN
MPS4354 M3567
ABSOLUTE MAXIMUM BATINGS f.^m.^wm., -"**• MPS4365 MPS4356 PN3669 FN3568
Emitter-Base Voltage VEBO 6V 5V 6V 6V
Total Power Dissipation ( TA<25*C) Ptot 625mW
derate 6s*/*C shore 25»C
(*C<28»C) 1.5W
derate ia*/»C shore 28*C
Operating Junction Storage Temperature Tj, Tstg -66 to 160*C
EUBCTBICAL CBABACTEBISTIC8 (*A«25*C unless otherwise noted)

PABAMETEB MPS TYPES PN TYPES
BIN MAX um MAX
Collector-Base Breakdown Voltage BVCBO IOO.OlsA IgsO
Collector-Emitter Breakdown WCEO * Note 1 Note 1 IC»10wA iBxO
Voltage
Eaitter-Base Breakdown Voltage BVgBO Ig=0.01sA IC*0
Collector Cutoff Current ICBO Vcb=50V IgsO

VCB=50V lE=0
TA=75»C
VCB=40V Ie=0
VCB=40V IfcO
Taf75«C
Bait tor Cutoff Current IEBO 100 VbB=4V IC-0
Collector-Emitter Saturation VCE(sat)* 0.15 0.25 IC*150mA IBbIGwA

Voltage 0.5 IC*500*A IBsSOwA
1 lG*U IBxO.U (Note 2)
Base-Emitter Saturation Voltage VBE(sat)* 0.9 IC*160wA Ib=15wa|
1.1 IC=600mA lB=50mW
1.2 IC=1A IB=0.U (Notte 2)
* Pulse Test : Pulse Vidtbs0.3aS , Duty Cyclesljt
Note 1 : equal to the Tallies of absolute maximum ratings. Note 2 t for MPS4355 only
MPS4354,5,6 PN3567 8 9 r f
UPS TYPES H) TYPES

KIN MAX MM MAX
Base-Enitter Voltage Vbb * 1.1 V K>150aA VCB.1V
1.1 V K>500nA VCKtO.SV
1.2 V IC-1A VCE<1V (Not
Current u ain -Bandwidth Product *T 100 500 60 600 MH. IOSOaA VCE>10V
Collector-Base Capacitance Ccb 30 20 pF VCB-10V Ib-0

f.l40KHs
bitter-Base Capacitance Ceb 110 80 pF VEB-0.8V ic-o

f-140KHa
Noise Figure NF 3 dB IC-0.1M VCB-10V

BQslKA fslKHs
Turn -Oh Tine ton 100 nS Vcc-30V Ic»600bA

IbisSObA
Turn-Off Tiae toff 400 nS Vcc30V IC-B00M

IB1~IB»-50«A
D.C. CUBRENT GAIN-HFE AT ?Am25 # C *

MPS4354 MPS4355 MPS4356 FN3567 PN3568 PN3560
• icAce MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX
O.LaA/lOV 25 60 25
1«A/10V 40 75 40
lOnA/lOV 50 500 100 400 50 250
lOOnA/lOV 40 75 40
500uA/l0V 30 76 30
30aA/lV 40 40 100
150«A/1V 40 120 40 120 100 300
• Pulse Test t Pulse Widtfc-0.3nS, Duty Cycle*l}t Noto 2 t for MPS4355 only.
%£ (NORMALIZED) vs IC VBE A- VCE(sat) ts IC

1.2
10 100 1000 10 100 1000

IC (-A) *C (-A)
3.78.0810B.8100A/B
MPS6530 through MPS6535
COMPLEMENTARY
SILICON GENERAL PURPOSE AMPLIFIERS & SWITCHES
CASE TO-92A
THE MPS6530 THROUGH MPS6535 ARE SILICON PLANAR
EPITAXIAL TRANSISTORS TOR GENERAL PURPOSE AMPLIFIERS
AND MEDIUM SPEED SWITCHING APPLICATIONS UP TO 600mA
COLLECTOR CURRENT. THE MPS6530, MPS6531, MPS6532
ARE NPN AND ARE COMPLEMENTARY TO THE PNP MPS6533,
MPS6534f MPS6535 HESPECTIVELT.
EBC
NPN _BJP_
and current values are negative
MPS6530 MPS6533
ABSOLUTE MAXIMUM RATINGS f" p-"-p <»*** Itaga
MPS6531 MP86S52
Collector-Base Voltage 60V 50V 40V 30V
VCBO
Collector-Biitter Voltage 40V 30V 40V 30V
VceO
Emitter-Base Voltage VeBO 5V 5V 4V 4V
Collector Current IC 0.6A
Total Power Dissipation" (Tc<25°C) Ptot 1.2V
(TA^ 25<>c) 500nV
Operating Junction & Storage Temperature Td» Tstg -55 to 150°C
Collector-Base Breakdown Voltage BVcBO IC-O.OlmA IE-O

MPS6530, MPS6531 60 V
MPS6532 50 V
MPS6533f MPS6534 40 V
MPS6535 30 V
Oell ec tor- finitter Breakdown Voltage LV(jbo » IC-10mA Ib-0
MPS6530, MPS6531 40 V
MPS6532 30 V
MPS6533. MPS6534 40 V
MPS6535 30 V
Emitter-Base Breakdown Voltage BVEBO I E -0.01mA Ic-0
MPS655O, 1, 2 b V
MPS6533, 4t 5 4 V
MPS6530, MPS6531 50 nA VCB-40V Ie-O
MPS6532 100 nA VCB-30V IE-O
MPS6533, MPS6534 50 nA VCB-30V IE-0
MPS6535 100 nA VCB-20V IE-0

MPS6550, MPS6531 2 VCB-40V lE"0 Ta-60<>C
P*
MPS6552 5 )"* VCB-30Y Ie-0 T A-60°C
MPS6533. MPS6534 2 VCB-30V IE-0 Ta-60»C
J*
MPS6555 5 HA 7CB-20V Ie-0 Ta-60<>C
Collector-Emitter Saturation VCE(sat) » IC-lOOmA lB-10mA
Voltage MP36530, MPS6532 0.5 V
MPS6531 0.3 V
MPS6533, MPS6535 0.5 V
MPS6534 0.3 V
Base-Enitter Saturation Voltage VBE(sat) » IC-100mA lB-10mA
MPS6530, MPS6531 1.0 V
MPS6532 1.2 V
MPS6533t MPS6534 1.0 V
MPS6535 1.2 V
D.C. Current Gain HpE * 30 IC»10mA VcE«lV
MPS6530, MPS6533 40 120 IC-lOOmA VcE-lV
25 IC"500mA Vce-IOV
D.C. Current Gain HyR * 60 IC-10mA Vce-IV
MPS6551, MPS6534 90 270 I C -100mA VcE-lV
50 I c -500mA VCE-IOV
D.C. Current Gain HpE »

MPS6532, KPS6535 30 IC-100mA Vqe-IV
Collector-Base Capacitance Cob VCB -10V I E -0 f-lOOkHz
MPS6530, 1, 2 3.8 5 PF
MPS6533, 4, 5 4,8 6 pp
Current Gain-Bandwidth Product fT 250 MHz IC-50mA VCE-IOV
HPE (NORMALIZED) vs ic VCE(sat) & VBE(sat) vs *C

2.0 T A -25°C
III
mill
I
Pulse Test
N q _ mi
^
3 1.2 sis 1*
qfasd
I o.e
o II
t \
II
I-
1
m t M\\\
0.4
t u
0.
t III ill
10 100 1000 1 10 100
r
C (mA) IC (mA)
1.78.65O0B.O650B
MPS6560 MPS6561 MPS6562 MPS6563
CASE TO-92A
THE MPS656O, MPS6561 (NPN) AHD MPS6562, MPS6563
(PHP) ARE SILICON PLANAR EPITAXIAL TRANSISTORS
DESIGNED FOR COMPLEMENTARY SYMMETRY AUDIO OUTPUT
A PPLICATIONS. THEY FEATURE LOW COLLECTOR TO
EMITTER SATURATION VOLTAGE (0.23V TYPICAL «
IC-500mA).
MPS6560fNPN) MPS656l(NPN)
ABSOLUTE MAXIMUM RATIWGS For p-n-p devices, voltage and current values t »™>9«i« MPS6562(PNP) MPS6563(PNP)
Collector-Baae Voltage VCBO 25V 20V
Total Power Dissipation (Tc^25°C) ptot 1.5W
(Ta425°C) 625mW
Operating Junction & Storage Temperature T J» T etg -55 to 150°C
ELECTRICAL CHARACTERISTICS (Ta- 25°C unless otherwise noted)

«IPS6560fNP!l} MPS656l(NPN)
PARAMBTER SYMBOL MPS6562(PNP) MPS6563(PNP) UNIT TEST CONDITIONS
MIN MAX MIN MAX
Collector-Base Breakdown Voltage BVcBO 25 20 V I c «0.1mA Ie-0
Col lea tor Cutoff Current ICBO 100 100 nA VCB-20V Ie-0
Collector Cutoff Current ICEO 100 100 nA "
VcB"VCE0 IB"
Emitter Cutoff Current IEBO 100 100 nA VEB-4V Ic-0
Collector-Emitter Saturation VcE(sat)< 0.5 V IC-500mA lB-50mA
Voltage 0.5 V IC-350"»A IB-35«»A
Base-Emitter Voltage Vbe » 1.2 V IC-500mA VCE-IV

1.2 V IC»350mA VCE-IV
B.C. Current Gain HFE * 35 35 IC-10mA Vce-IV

50 50 IC-100mA VCE-IV
50 200 IC-500mA Vce-IV
50 200 IC-350aA VCE-IV
Current Gain-Bandwidth Product fT 60 60 MHz IC-lOmA VCE-10V
Collector-Base Capacitance Cob 30 30 pF VCB-10V Ib-O
f-lOOkHz
• Pulse Test 1 Pulse Width-0.3«S, Duty Cyole-1^
MPS6560 MPS6561 MPS6562 MPS6563
(
Ptot vs TA Hjb v *> IC

2.0 250
1 Pulse Test
t
VCE-1»
,
200
1.5
Pint, «$. -
150
%E III
1.0
(V)
% 100
1
IN-?
0.5 s& IX' \\i
r^X£l & 50 Til
PI
111
50 100 150 200 10 100 100
TA (°C) IC (mA)
VCE(sat) 4 Vbe vs IC fT vs If
l.Or 250
Pulse Test
J VCE -10V
0.8 T IP
VB B VJ
''i
III
< B
0.6 rr TtTn fT 150 'PI
VOLT 11 (MHz) j!
0.4
1 ll 1
,J
0.2
Vcs(aat)
III
i.C'iy x o.
^ 50 III
III
10 100 1000 10 100
IC (mA) IC (mA)
1.7&-83O0a/c.O830a/C
THE ABOVE TYPES ABE NPN SILICON PLANAR CASE T0-02A CASE TO-
EPITAXIAL TRANSISTORS FOR USE IN AF
SMALL SIGNAL AMPLIFIERS AND DIRECT
COUPLED CIRCUITS. THEIR MAXIMUM POWER MPS TYPES » TYPES
DISSIPATION . 360aW AT TA*28»C.
EBC
DEVICE SPECIFICATIONS (*As25*C)

DEVICE LVCEO BVEBO ICBO • VCB HFE • IC/VCE VCE(sat) O Ic/IB| NWE
TYPE (V) (v) (nA) (V) (A)(V) (V) (mk)(mk)
in in in -a ax
MPS/2N2711 18 5 600 18 30-90 • 2/4.5 Cob<4pF0 VcBclOV
MPS/2N2712 18 500 • 18 75-225 • 2/4.5 Cob<12pF VCBelOV
MPS/2N2716 18 500 • 18 75-225 2/4.5 Cob< 5pF VCBslOV
MPS/2N2923 90-180*0 2/10
MPS/2N2924 25 500 • 25 150-300*0 2/10 * hf • • lKHi
MPS/2N2925 235-4 70*0 2/lO
MPS/2N3390 400-800 2/4.5
MPS/2N3391 250-500 O 2/4.5
MPS/2N3392 150-300 2/4.5
MPS/2N3393 90-180 • 2/4.5
MPS/2N3394 100 O 18 55-110 2/4.5
MPS/2N3395 150-500 • 2/4.5
MPS/2N3396 90-500 2/4.5
MPS/2N3397 55-500 2/4.5
MPS/2N3398 55-800 2/4.5
MPS/2N3707 100-400 0.1/5
MPS/2N3708 45*660 For MPS/2N3707 only
1/5
MPS/2N3709 30 100 20 45-165 1/5 1.0 10/0.5 NF<5dB
MPS/2N3710 90-330 1/5 IC=0.1«A VcEsSV
MPS/2N37U 180-660 1/5 R3=10Kft f=30-15K Hg
MPS/2N5172 25 100 25 100-500 10/10 0.25 10/1
MPS 6512 50-100 2/10

30 60 30 J0= 9. 100/10
0.5 50/5 Cob<3.5pF
90-180 VCfelOV
MPS 6513 2/10
60- 100/10
MPS 6566 40-160 10/10 Cob< 3»5pF VCBslOV
MPS 6666 100 30 0.4 10/1
100-400 10/10 fT>200MUs IC=10«A
100- 0.1/6 |VCE=10V
MPS 6573 100 35 0.5 10/1
200-Bffl) 9 1,0/5, • Hpj GROUPINGS :
MPS 6574 35 100 35 100-300*0 1/5 0.5 10/1 Y c 100-150
MPS 100- '0.1/5 B = 125-185
6575 100 45 0.5 10/1
200-600 10/5 G m 160-225
MPS 6576 100 45 100-300*0 1/6 0-5 10/1 aoo-ann
CURRENT GAIN
D.C. CURRENT GAIN - BANDWIDTH PRODUCT
1.6
Hill 1 Mill
«T I
pulse test!
(MHz)
v<:f 3V|I
1,J -1 V CE" 10V 1
S 0.8 ^s |
>
H - |
J
1 10
C <mA) l
c (mA)
V BE AND v CE(sat) h-PARAMETERS (NORMALIZED)

vs COLLECTOR CURRENT *
VS COLLECTOR CURRENT
'
1 T'-l 1 rm
1 pulse t sst
(V)
V CE =6\/
he (N) \
hi e f=1KHz
h re
v Be
-
9 VCE «5V
= hfe . \^r*
^^»»^| "''
|
v CE(sat) T h™,
1 =dHH+tl T
IC <mA) l
c (mA)
COLLECTOR-BASE CAPACITANCE
VS COLLECTOR-BASE VOLTAGE
Cob
(pF) 'Typical values at
IC-2mA VCE-6V
6 E"°
1 -1MHz
H FE (D.a> 300 600
h ie (1KHz) 4.6Xohrm 8.7Kohmt
hf,(1KHz) 330 600

0' 4
h^dKHz) 2x1 3x10^*
ho,(1KHz) arjpmhot 6Qumhos
V CB 3.78.4300B/A
(V)
MPS8000
NPN RF MEDIUM POWER AMPLIFIER & DRIVER
THE MPS8000 IS AN NPN SILICON PLANAR EPITAXIAL C4SE TQ-92A X-67 HEAT SINK
TRANSI STOR DESIGNED FOR RF DRIVER AND LOW
POWER OUTPUT STAGE IN CB EQUIPMENT OPERATING
TO 30MHz.
BBC

Collector-Emitter Voltage (VRE-O) VCES 60V
Collector-Emitter Voltage (IB-O) VCEO 30V
Total Power Dissipation O TC<25°C Ptot 1.5W
With X-67 Heat Sink © Ta<25°c BOQmW
No Heat Sink © ^k<25°C 625mW
Operating Junction & Storage Temperature Tj» T stg -55 to 1500C
Collector-Emitter Breakdown Voltage LVCES 60 V IC-50mA (Pulsed)
VBE-0
Emitter-Base Breakdown Voltage BVgBO 3 6 V lE-lmA Ic-O
Collector Cutoff Current ICBO 10 p* VCB-50V IE-O
Collector-Emitter Saturation Voltage VCE(sat) 0.07 0.3 V IC-100mA lB-10mA
Base-Emitter Saturation Voltage VBE(sat) 0.72 V IC-100mA IB-lOmA
D.C. Current Gain Rfe 30 150 IC-100mA VCE-2V
Current Gain-Bandwidth Product fT 150 240 MHz IC-50UA VCE-10V
Power Output Pout 350 mW Vcc-13.6V f -27MHz
Pin-21.8nW
K
MPS8000
TYPICAL CHARACTERISTICS AT TA.25<>C
Tc B HpE vs le
Cre va
20 2QQ
lB-0 Mill VCB-2V
160 nun
15
V
Cre \ 120
10 \V \
lxl'll
•*> 80
,
(P») Nj
40
IK
llllll
5 10 15 20 10 100 1000
VCB (V) IC (ml)
^BE(aat) & V CE ( 8a t) vs lc
1.0
ic-idiB'IH
Puise Test J-
0.6
-* -''t
| | Hill '
II
-"
fT
0.6 — M »& rrfl
(MHz) r
.
J 1
0.4
0.2
- 1
CE (sat)
Hill /A
a p-'
100 1000 100 1000
IC (mA) XC (mA)
WMfcTMTCmCMT
»"9»ec tm
CI MMIJkFAKOMllrivhMM
CI I.OWIM*PAKOWlrMiWM
C1,C« aoMf MtCO M4
"""" ,-**^ >vyyv «*

*T°> l Tt~L ; T
EC TEST 5 NO. IB
2.78.8JOO
MPS-A05 MPS-A06 MPS-A55 MPS-A56
THE MPS-A05, MPS-A06, MPS-A55» MPS-A56 CASE TO-92A

AR? SILICON PLANAR EPITAXIAL TRANSISTORS
TOR AF DRIVERS AND OUTPUTS, AS WELL AS
FOR UNIVERSAL APPLICATIONS. THE MPS-A05,
MP3-A06 ARE NPN AND ARE COMPLEMENTARY TO
THE PNP MPS-A55 AND MPS-A56 RESPECTIVELY.
MPS-A05(NFN} MP3-A06(NPN)
ABSOLUTE MOJCIMM RATING For p-n-p devices, voltage and current values a , negative MPS-A55(PNP) MPS-A56(PNP)
Col lee tor-Pas e Voltage VCBO 60V 60V
Collector-Bnitter Voltage VCEO 60V 80V
Baitter-Bas» Voltage VEBO 4V
Collector Peak Current (t^lOms) ICH 1.5A
Total Power Dissipation (Tc«25°C) Ptot 1.5W

(TA S25°C) 625mW
Operating Junction & Storage Temperature Tj» T atg -55 to 150°C
ELECTRICAL CHARACTERISTICS (Ta 25°C unless otherwise noted)

MPB-A05(NPN) iMPS-A06(NPN)
PARAMBTHt SYMBOL MPS-A55(PNP) MPS-A56(PNP) UNIT TEST CONDITIONS
MIN MAX MIN MAX
Collector-Emitter Breakdown LV(juo » 60 80 V IC-lmA Ib-0

Voltage
Quitter-Base Breakdown Voltage BVEBO 4 4 V lE-0.1mA IC-O
Collector Cutoff Current ICBO 100 100 nA VCB-VCBO IE-O
Collector-Bnitter Saturation VcE(sat)* 0.25 0.25 V IC-lOOmA
Voltage lB-10mA
Base-Knitter Saturation Voltage Vbe « 1.2 1.2 V IC-100mA VCE-1V
D.C. Current Gain HPE * 50 50 IC-lOmA VCE-1V

50 50 IC-lOOmA VCE-1V

MPS-A05. 06 only 50 50 KHz IC-100mA VCE-1V
MPS-A55i 56 only 100 100 MHz IC-lOOmA VCE-2V
Collector-Base Capacitance Cob 20 20 PP VCB-10V Ib-0

f-lKHz
* Pulse Test t Pulse Width-0.3m 3, Duty Cycl Le-1*
TXPICAL CHARACTERISTICS
T A-25 C unless otherwise noted)
(
Ptot vs TA HPE V8 ic
2.0 200
['pulse Test
'L S«1V
1<0 u HUH
1.5
"v>v- Hyg
12Q
11
11
NV
Srl
1.0
\9
<
u
N
\1
(W) 80 Pi
M1
4° ^_
^
JJ
0.5
f- 40 JJ
u
J
50 100 150 200 10 100 1000
TA (°C) X C (mA)
VCE(sat) & V BE vs Ic *T vs IC
1.0 250
Pulse Test VCE-2V
Jn It
0.8 Will 200
TBE V*- n
e Vf!g*iyi
0.6 fT 150 ~ n
VOLT (MHz)
_.... 4 l\['. ZV.'I
0.4 100 ..... 4- L.t
_..,, _... LJ
0.2 50 J... .... _..|
VcB(sat}
IC-IO^B
= 10 IC 1000 100
It
1000
*C (mA) X (mA)
C
1.78.81003.0810B
NPN PNP SILICON DARLINGTON AF MEDIUM POWER TRANSISTORS
CASE TO-92A
THE MPS-A13t MPS-A14 (RPR) AND MPS-A65,
MPS-A66 (PUP) ARE SILICON PLANAR EPITAXIAL
DARLINGTON TRANSISTORS FOR A? AMPLIFIERS
REQUIRING HIGH INPUT IMPEDANCE.
EBC
MPS-A13(NPN) MPS-A65(PNP)
ABSOLUTE MAXIMUM RATINGS f<" pap devices, voltage and current values are negative KPS-A14(KFN) MPS-A66(PNP)
Collector-Emitter Voltage (VbE-O) Vces 30V 30V

Total Power Dissipation (TC<25°C) Ptot 1 «2W
TA<25°C) 0.5W
(
Operating Junction & Storage Teaperature Tj. T 8 tg -55 to 150°C
ELECTRICAL CHARACTERISTICS ( TA-25°C unless otherwise noted)

PARAMETER SYMBOL MPT TYP MAX UNIT TEST CONDITIONS
Collector-Emitter Breakdown Voltage BVCES ,30 IC-O.lnA I3-O
Collector Cutoff Current ICBO 100 VCB-30V Ib-O
Quitter Cmtoff Current IEBO 100 vbb-vebo ic-o
Collector-Emitter Saturation Voltage VcE(sat)< 0.75 1.5 IC-100mA lB-0.1mA
Base-Emitter Voltage Vbe « 1.35 2.0 IC-100mA VCE-5V
D.C. Current Gain MPS-A13 HpE * 5 xlO; IC-lOmA VCE-5V

MPS-A14 10 xlO;
MPS-A65 50 xlO
:105
MPS-A66 75
MPS-A13 HPE 10 xlO 5 IC-100mA VCE-5V

D.C. Current Gain
20 :103
MPS-A14
M°S-A65 20 10?
40 :105
MPS-A66
Current Gain-Bandwidth Product fT IC-lOmA VCE-5V
MPS-A13. 14 125 MHz
MPS-A65, 66 100 MHz
Collector-Base Capacitance Cob VC3-10V IE-0

MPS-Al3i 14 PF f-lOOkHz
MPS-A65, 66 PF
Noise Figure (f.ikHz Rq-IOOKD) NF dB IC-lmA VCE-5V
"*
Pulse Test 1 Pulse VM.dth-0.3nS, Duty Cyel«-1*.
(
p tot vs TA vCE(sat) & Vbe vs Ic

2.0 2.0i
jPuise Test
mini _
1.6
1.5 iiiiiii
,-"''111
Ptot
(w)
1.0 V $J»- voir
1.2
-TTPlP *'
' 1
^ v 0.8
^CB(sat)
@ xr »ioooxb:
<3
0.5
^ *%*.< *»*
7f 1
0.4
fel
V"
III
50 100 150 200 10 100 1000

TA (°C) IC (mA)
HFE V8 IC HFE vs ]tc

50 pm 100
110 \\ I
1
'II
40 1 V
N
80 Wk-~- ..fit
IS
1
'
*Ki \ 1
i 1
4 hIIII
>
6°
m \ 1
II
/ 1
nil
ll!
li
I ll
1\
K <
« 20 .JftS a 40 III
i
v 1
^Nll J
ml
10 1
lJ 20 1 yl
Vr F-" v HI f
.Vcfi> 5V-HI |!
1
III
Pu Lse Test Puis e Test 1 lllll llll

10 100 1000 10 100
XC (mA) *C (mA)
1.78.4365/4565
MPS-A20 MPS-A70
COMPLEMENTARY SILICON AF SMALL SIGNAL TRANSISTORS
CASE TO-92A
THE MP3-A20 (NPN) AND MPS-A70 (PNP) ARE
SILICON PLANAR EPITAXIAL TRANSISTORS TOR
USE IN AF SHALL SIGNAL APPLICATIONS.
THEY ARE SUPPLIED IN SELECTED HpE GROUPS.
EBC
MPS-A20 (NPN
ABSOLUTE MAXIMUM RATINGS For P-«-P devices, voltage and current values are negative MPS-A70 (PNP
Emitter-Base Voltage VeBO 4V
Total Power Dissipation T A*25°C) 350mW
( Ptot
derate 2.8mW/°C above 250c
Operating Junction & Storage Temperature Tj, T 8t _ -55 to 1500c
ELECTRICAL CHARACTERISTICS (Ta-25°C unless otherwise no ted)

Collector-Base Breakdown Voltage BVCBO 45 V IC-O.lmA IE-O
Collector-Emitter Breakdown Voltage LVcEO * 40 V IC-lmA IB-O
Emitter-Base Breakdown Voltage BVjbO 4 V iE-O.lmA IC-0
Collector-Emitter Saturation Voltage TCE(sat)* 0.08 0.25 V IC-10mA iB-lnA
0.25 V lC-100mA lB-10mA
Base-Emitter Voltage Vbe * 0.67 V IC-5»A VCE-lOV
B.C. Current Gain HPE • 40 400 I c -5mA VCE-10V
GROUP R 40 70 100
GROUP W 80 140 200
GROUP B 120 200 300
GROUP Y 150 270 400
Current Gain-Bandwidth Product fT 125 200 MHz IC-5«A VCE-10V
Colleotor-Base Capacitance Cob 2.7 4 PP VcB-lOV lE-0
f-lMHs
Noise Figure MP 2 dB IC-O.lmA VCE-10V

RG-10Kfl f-50Hs-15KHz
» Pulse Test 1 Pulse Width-0.3mS, Duty Cycle-ljG

—
MPS-A20 MPS-A70
Ptot V8 TA HpE (NORMALIZED) vs *C

8CO 2.0
mm vce-iov
nil
i
iiijI
1.6 iiiiiii
600
Jill !|
i'l|l
(mW) K 1.2
400 illi tjfc- 'iP
2
B5
°« 8 mi 0* H
-i-ili
1
200
I 0.4 II iP
-U
111
J
Iffl inn
ii
50 100 150 200 0.1 10

TA (°C) IC (mA)
VfeE t V<3E( sat) TO JC I

Tvs_Ic_
250 I!"
1 "ulse Test
HI llll mil Ill
IJjj 200 iffl II

S
n ii ni
H
j
H II
fT 150 111
VOLT HI |
1
1 (MHz) ll'U || llll
7BE
""
100 Lflii
j!
sacJSff in"
llll
50 III llll ||||
7 3E(»at) t II
"I !
Hi]
• ic -JLUIBI
llll! Ill
v«ijilOV
0.1 10 100 0.1 1 10
TC TC (mA)
(mA)
2.78.4300B/A.0430B/A
MPS-A42 MPS-A43
NPN SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS
CASE TO-92A
THE MPS-M2, MPS-A43 ARE NPN SILICON PLANAR
TRANSISTORS FOR GENERAL PURPOSE HIGH VOLTAGE
APPLICATIONS SUCH AS TV VIDEO OUTPUT STAGE
AND GAS DISCHARGE TUBE DRIVER.
EBC
ABSOLUTE MAXIMUM RATINGS MPS-A42 MPS-A43

Collector-Base Voltage VcBO 300V 200V
Collector-Emitter Voltage Vceo JOOV 200V
Emitter-Base Voltage VfiBO 6V 6V
Collector Current IC lOOnA
Collector Peak Current (t £lOmS) Icm 500mA
Total Power Diaaipation (Tc<25°C) Ptot 1.5V
(
TA«25°C) 625mW
Operating Junction & Storage Temperature Tj, Ts tg -55 to 150<>C
ELECTRICAL CHARACTERISTICS (TA-25°C)

'
MPS-A42J#s-a43
PARAMETER SYMBOL
MINMAX MIN MAX UNIT TEST CONDITIONS
Collector-Base Breakdown Voltage BVCBO 300 200 V IC-O.lmA IE*4

Collector-Emitter Breakdown LVcbO 300 200 V IC-lmA lB-0
Emitter-Base Breakdown Voltage bvebo 6 6 V lB-0.1mA IC-O
Collector Cutoff Current ICBO 0.1 VCB-200V Ie-0
0.1 VC B-160V IE-0
J*
Emitter Cutoff Current IEBO 0.1 VgB-6V Ic-0
0.1 VgB-4V IC^>
Collector-Emitter Saturation VCE(sat) 0.5 0.4 V IC-20mA IB-2mA
Voltage
Base-Emitter Saturation VBE(aat) 0.9 0.9 V IC-2CBA lB-2mA
Voltage
D.C. Current Gain HPE 25 25 IC-lmA VCE-10V
40 40 IC-10mA VcE-lOV
40 50 200 lC-30mA VcE-lOV
Collector-Base Capacitance Cc\) 3 4 PF VCB-20V Ie-0
f-lMHs
MPS-A42 MPS-A43
TOPICAL CHARACTERISTICS
T
( A-25°C unless otbsrwiss noted)
CE(»at) v» Ic
10
fIC-10lB
pu.
^BEfsat')
nil
Nil
0.5
llll
Tcilfffi
0.1.
1 10 100 1000 0,1 10 100
*C(»A) IC(«A)
ic Ccb ?CB
100 v<pSWOV, 100
l£-0
t f-lM
80
J 30
Cob
tf 60 J
X t
10
J I —
t h,
t
20
J
t
10 100 10 100
^(A) V(!B (T)
12.77.7300B
MPS-D01
NPN SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTOR
CASE TO-92A
THE MPS-S01 IS HP* SILICON PLAIAR TRANSISTOR
POR GENERAL PDRF08E HIGH VOLTAGE AKPLHTERS
AMD GAS DISCHARGE DISPLAY DRIVING APPLICATIONS.
IT FEATURES 200? MIN COLLECTOR-EMITTER BREAK-
DOWN VOLTAGE.
ABSOLUTE MAXIMUM BATHES

Collector-Emitter Voltage VCBO 200V
Eaitter-Base Voltsge ?EBO 4V
Collector Currant Ic lOOaA
Collector Peak Current (t $10aS) ICM 500mA
Total Power Dissipation (Tc^25°C) Ptot 1.5V
(TAC25°C) 625mV
Operating Junction & Storage Temperature Tj, T8 tg -55 to +150°C
ELECTRICAL CHARACTERISTICS (*A-25°C unless otherwise noted)
PARAMETER SYMBOL ran TIP MAX UNIT TEST CONDITIONS

Collector-Base Breakdown Voltage BVcbo 200 V IC-10uA Ie-o
Colleotor-Baitter Breakdown Voltagi LVcBO 200 V IC-lmA lB-0
Eaitter-Baae Breakdown Voltage BVebq 4 V Ig-lOuA ic-o
Collector Cutoff Current 1 CB0 0.1 r* VC B-80V IE-O

4 M VcB-80^ lE-0
T A-75°C
Collector Cutoff Current 1 CES 0.1 /* VCE-80V Vbe-°
4 p* VCE-80V VfiE-0
TA-75°C
D.C. Current Cain HfE 25 IC-10«A VCS-IOV

20 I C -30mA VCE-IOV
Current Gain-Bandwidth Product fT 40 80 MHs IC-IOmA VCE-20V
Collector-Base Capacitance Cod 3 PP VCB-30V lE-0

f-lMH*
MPS-D01

(
0.1 1 10 100 1000 100

IC (bA)
*T vs ic Cib & >, ye Tr

100 VCE-20V 100 —
— ;lB-0
f-lMBs
t
^""^
, Z2ib'-
mm i
30
\
^ T
1
(I*)
\ 10
(MHz) 1
J 1
40
J
t *, Co b . . 1
20
t
J ]
10 100 10 100
*C (al)
12.77.7300B
MPS-D05 MPS-D55
COMPLEMENTARY
SILICON GENERAL PURPOSE AMPLIFIERS & SWITCHES
THE MPS-D05 (HPR) ABD MPS-D55 (PBP) ARE CASE TO-92A

COMPLEMENTARY SILICON PLABAR EPITAXIAL
TRABSISTORS FOR GENERAL PURPOSE AF AMPLIFIERS
AMD DRIVERS FOR LED DISPLAY.
ABSOLUTE MAXIMUM RATIBGS f« »« *~«. «*•••— «»•
Collectcr-Base Voltage VCBO 25V

Quitter-Base Voltage VgBO 5V

Total Power Dissipation (Tc*25°C) ptot 1.2W
(TA «25°C) 500mW
Operating Junction & Storage Temperature Tj, Tstg -55 to 150<>C
ELECTRICAL CHARACTERISTICS (Ta-25°C unless otherwise noted )
PARAMETER SYMBOL MIR TYP MAX TWIT TEST conditiobs
Collector-Base Breakdown Voltage BVCBO 25 V ICkO.OlmA Ie-0
Collector-Emitter Breakdown Voltage LVcbO • 25 V IC-lmA IB-O

Emitter-Base Breakdown Voltage BVebO 5 V lE-0.01mA IC-0
Collector Cutoff Current JCBO 1 "* VCB-20V Ie-0
Collector Cutoff Current ices 1 VCE-20V Vbe-0
P»
Bmitter Cutoff Current Iebo 0.1 M* VEB-5V Ic-O
Collector-Emitter Saturation Voltage vCE(sat)« 0.1 0.5 V IC-100mA IB-IOkA

Base-Emitter Saturation Voltage VBE(sat)* 0.85 V IC-100mA lB-10mA
D.C. Current Gain hfe * 50 IC-50mA VCE"5V
80 170 IC-lOOmA VCB-5V
30 IC-500BVA VCE-5V
Current Gain-Bandwidth Product fT 100 200 MHs IC-50mA VCE-IOV
• Pulse Test t Pulse Width-0.3mS, Duly Cycle-1^

MPS-D05 MPS-D55
(
Ptot V8 ta
2.0 250
1.5
200 I
4fHffl
150
^ '
1 \
?tot i.o VsJ» .
\
(w) ^ •n
\
«*£c tf V!
«&< 50 \\\
£3 ~i
Vnv^SV
1111111
&/
P\ Pulse Test II
50 100 150 200 10 100 1000

TA (°C) IC (mA)
TCE(sat) & vBS(aat) vs IC fT vs IC

250
Pulse Test Vci -10V
Hill
I C -3 Ul »
1.6 200
s 1
i
II
1.2 -
fT
150 1 1 \
VOLT
Hill
iA
'
(MHz) 100
i i \
0.8 wjCîj:
"M i
1
0.4 50
vce(« at J
Nil
10 100 1000 10 100 1000
T C (mA) J C (mA)
1.78.65OOB.0650B
MPS-L01
CASE T0-92A
THE MPS-L01 IS HPI SILICOI PLAHAR EPITAXIAL
TRAHSI3T0R JOR GENERAL PURPOSE HIGH VOLTAGE
AMPLIFIERS AND GAS DISCHARGE DISPLAY DRIYIEG
APPUCATIfflB. IT FBATORES LOW COLLECTOR-
9
EMITTEa SATORATKW YOLTAGE AH) HIGH IREQDBBCY
RESPONSE.
ATSOTJITE MAXIMUM RATING
Collector-Base Yoltage CBO 140V »
Collector-Emitter Yoltage YCEO 120Y »

Emitter-Base Yoltage YEBO 5Y
Collector Peek Current (t<10mS) I(M 500mA

Total Power Dissipation • Tc < 25°C Ptot 1.2W
O TA « 25°C 500mV
Operating Junction & Storage Temperature '3. *atg -55 to +150°C
HpE va Ic YBE(eat) & VCE(aat) va Ic

1.0
200
llll
ta.2 5 oc Ta-25°C pulse
!
;est
1
Pulee Teat IC-lOlB
1 ! 0.8
160 1
«* _ (IlillH
"PE (Y) iid£2&
120 0.6
* VfeaSY
1 nil
eo 0.4
40 0.2
YCS(aat)
null lllllllll
10 5.1 10
I C (mA) *C (mA)
MPS-L01
PARAMETER SYMBOL MIH TYP MAX UKIT TEST COKDITIOHS
Collector-Base Breakdown Voltage BVCBO * 140 V I C -0.1mA Ij-0
Collector-Emitter Breakdown Voltage LVCB0 #

120 V IC-lmA IB-O
Emitter-Base Breakdown Voltage BVgBO 5 V I c -iquA Ic-0
Collector Cmteff Current I CBO 1 VCB-75V IE-O

J*
Collector Cutoff Current ICER 10 M VcE"100V RBE"lkfl
Emitter Cutoff Current I EBO 0.1 jiA VgB-4V Ic-°
Collector-Emitter Saturation Voltage VCE(sat) 0.2 V I c -10mA iB-lmA

0.3 V I C "5CmA IB-5«A
Base-Emitter Saturation Voltage vBE(sat) 1.2 V IC«10mA Ib-IbA

1.4 V IC-5C«A I B-5bA
B.C. Current Gain H?E 50 300 IC-lOmA VCE-5V
Current Gain Bandwidth Product fT 60 150 MHs I C -10*A VCE-10V
Collector-Base Capacitance Cob 4 8 pP Vcb-IOV Ie-O

f-lMHz
Small Signal Current Sain hfe 30 IC-lmA Vce-IOV

f-lkHz
• Special classification of breakdown voltage is available as follows.
ORDER PART BO. BVCBO (min) LVCEO («in)

MPS-LOl 140V 120V
MPS-LOIA 140V 140V
MPS-LOIB 170V 170V
f Cib & C b vs Vr
T vs Ic
200 ETA-25°C:
TA-25°C
(PP)
^CE-10V - IE-O
160 f-lMHs
.-"^ ^- ---I
//
fT
120 >
100 = EE =
(MHa) Er
^ \
80
/
/ \
n.. '
t ^ 1—1-
40 loi _44tt
J
|
10 100 10 100
*C (mA) 7R (v)
12.77-7100B
MSB492
PNP SILICON PLANAR EPITAXIAL MEDIUM POWER TRANSISTOR
THB M3B492 IS PIP SILICOH PLAIAR EPITAXIAL

TRAISI3T0R IBTERDED TO REPLACE TBI GERMANIUM WITH X-67 HEAT SINK
TO-92ACASE
TYPE 281492. IT FEATURES HIGH CURRENT
CAPACITT AID IS SUITABLE IQR STBOBO TUSH AND
AUDIO POWER AMPLIFIER APPLICATIONS.
TEE R3B492 IS PACKED IN TO-92A PLASTIC CASE

WITH OPTIONAL X-67 BEAT SINK.
ABSOLUTE MAXIMUM BATHOS

EBC
Sf
Collector-Base Voltage -YCBO 25V
Collector-Emitter Voltsge (Rbb-IOOO.) -CBR 25V
Emitter-Base Vol tag* -VeBO 6V

Collector Peak Current (t SlOmS) -ICM 4A
Total Power Dissipation • Tc * 25°C Ptot 1.5W
With X-67 Heat Sink, Ta*25°C 800BV
.Ho Heat Sink, Ta$25°C 623nV
Operating Junction * Storage Temperature Tj & T 8 tg -55 to +150°C

PARAMETER SYMBOL MIR TCP MAX UNIT TEST CONDITIONS
Collector Cutoff Current -ICEO 10 F* -VCE-15V Ib-0
Esitter Cutoff Current -IEBO 10 P* -veb=6v Ic-O
Collector-Bsitter Saturation Voltage -CB(sat)* 0.25 0.5 V -IC-1A -IB-0.1A

Base-Emitter Saturation Voltage -VBE(sat)* 1 1.3 V -IC-1A -IB-0.1A
D.C. Current Gain (note) HpE 1 * 80 160 360 -IC-0.2A -Vce-IV
HyE 2 * 40 75 -IC-2A -Vce-IV
Current Gain-Bandwidth Product fT 100 MHz -I C =0.1A -Vgg^V

Collector-Base Capacitance Cob 28 PP -VCB-10V Ie-O
f-lMHa
• Pulse Test t Pulse VH.dth-0.3BS, Duty Cycle-1^
note i HpE 1 i" classified as follws. Group B i 80-160 Group C i 120-240
Group D t 180-360
—
MSB492
TYPICAL CHARACTERISTICS (TA-250C. pgia. Test)
HPE va Ic CE(sat) * VBE(aat) vs Ic

1.6 1 1 1 IWI1
[-ci -10T ic-ioft
1.4 L\
150 1.2
-CB-1 r
TOW 1.0
HpE li
100 0.8 _t - Jgfe *£
u 0.6
50 0.4
0.2
.
":S5i!!£f
0.01
\\
0.1 1
. - -LIU
10 w 3.1
"JC (A)
1
-IC (A)
TYPICAL APPLICATION t STROBO TUSH UNIT
,
1 XJ^
s H5399
Vcc
(two 1.57 cells )F
Coll D.C. Resistance 1-2 : 0.15 ohm

3-4 t 0.25 ohm
5-6 t 190 ohm
Coil Turn Ratio 1-2 1 1.5

3-4 1 1.0
5-6 : 200
Standby Current 150mA e Vcc-JV

60mA © Vcc-27
Recycling Time 9 Sec. using zinc

carbon battery.
12.77. oeioc(L)
RN4918 RN4919 RN4920
THE RH 4918, RH 4919 AHD RH 4920 ARK PHP CASE T0-220B

SILICOH EPITAXIAL BASE POWER TRANSISTORS
DESIGRBD FOR SWITCRTHG, DRIVER AND OOTHIT
STAGES IH AUDIO AMPLIFIERS. THE RH 4918,
RH 4919 AHD RH 4920 ARE CCHPLEMEHTARY TO
RH 4921, RH 4922 AID RH 4923 RBSPBCTIVBLT.
RH 4918 RH 4919 RH 4920

ABSOLUTE MAXIMUM RATIHOS

Collector-Emitter Voltage VCBO 40V 60V 80V
Bnitter-Baae Voltage VEBO 5V
Base Current 13 1A
Total Power Dissipation © Tc<25 C Ptot 30W
Operating and Storage Junction Tj. T B tg -55 to +150°C
Temperature Range
THERMAL RESISTANCE
Junction to Case Ojc 4.17°C/tf max.
1
tot
n T
A SAFE OPERATING AREA (».C.)
50
40
30
? k>
Kt
fc
fe
nf ,.. — ,
\<
100 800 100
aCc) «(T)
RN4918 RN4919 RN4920
EIECTRICAL CHiUUCTBlISTICS (
T A-25°C unless otherwise noted )
PARAMETER SDfflOL MIK MAI UK1T TEST CONDITIONS
Collector-Emitter Breakdown Voltage -iVcEO * -IC-0.1A lB-0
RN4918 40 V
RNA919 60 V
RN4920 80 V
Collector Cutoff Current -ICBO 0.1 kA VCB-Rated VcboIe"0
Collector Cutoff Current RN4918 -ICEO 0.5 mA -VCE-20V Ib-0

RH4919 0.5 mA -VCE-3OV Ib-0
RN4920 0.5 nA -VcB-40V 1b-0
Collector Cutoff Current -ICEv 0.1 A VcE-Rated VcEO
-VEB.A.5V
0.5 mA VcE-Rated Vceo
-^BB»1.5V
Tc-125°C
Esitter Cutoff Current -Iebo 1 A -Vbb-5V Ic-0
Base-Eaitter voltage -vBE * 1.3 V -IC-1A -VcE-lV

Base-E«ltter Saturation Voltage -VBS(sat)* 1.3 V -IC-1A -Ib-O.IA
Collector-Baitter Saturation Voltage -VCE(aat)* 0.6 V -IC-1A -Ib-O.IA
D.C. Current Gain HfE * uo -IC-50»A -VcE-lV

20 100 -IC-5O0BA-VCE-1V
10 -IC-1A -Vce-IV
Current Gain-Bandwidth Product «* 3 MHs -IC-250aA -VcE-lOV
Collector-Base Capacitance Cob 100 PP -VCB-10V Ie-0

f-lMHas
Shall Signal Current Gain hf. 25 -IC-25CtaA -VCE-IOV

f-lkHz J
* Pulse Test : Pulse Width-0.3»S, Duty Cycle- 1$

VS J " VBE va l
FE NOKMALIZEI) CE(sat) & C
C (A)
RN4921 RN4922 RN4923
CASE T0-220B
THE RH 4921, HIT 4922 AND RN 4923 ARE NPN
DESIGNED FOR SWITCHING, DRIVER AND OUTPUT
STAGES IN AUDIO AMPLIFIERS. THE RN 4921,
RN 4922 AND RN 4923 ARE COMPLEMENTARY TO
RN 4918, RN 4919 AND RN 4920 RESPECTIVELY.
ABSOLUTE MAXIMUM RATINGS RN 4921 RN 4922 RN 4923

Enitter-Base Voltage Tebo 5V
Base Current IB 1A
Total Power Dissipation © Tc*25°C Ptot 30W
Operating and Storage Junction Tj, Tstg 55 to +150°C
Temperature Range
THERMAL RESISTANCE
Junction to Case °jc 4.17°C/V
SAFE OPERATING AREA (l).C.)

tot A
50
—
40
3"
£
2U
K <
Is' * .
10 KAj
100 200 JO 100

t *<*()
a(°c)
RN4921 RN4922 RN4923
ELECTRICAI CHARACTERISTICS T A-25°C unless otherwise noted)
(
Collector-Emitter Breakdown Voltage LVCBO IC-0.1A IB-O

RN 4921 40
RN 4922 60
RN 4923 80
Collector Cutoff Current ICBO 0.1 VCB -Rated VcBO lE-0
Collector Cutoff Current RN 4921 ICEO 0.5 mA VCE-20V I B-0

RN 4922 0.5 mA VCE-30V I B -0
RN 4925 0.5 mA VCE-40V Ib-0
Collector Cutoff Current ICEV 0.1 mA VCE-Rated VceO

VEB-1.5V
0.5 VCE-Rated Vceq

VEB-1.5V Tc-125°C
Emitter Cutoff Current lEBO 1 mA VEB-5V I c -0
Base-Emitter voltage Vbe » 1-3 V I C -1A Vce-IV
Base-Emitter Saturation Voltage VBE(sat)« 1.3 V I C -1A Ib-O.IA
Collector-Emitter Saturation Voltage CE(sat)* 0.6 V IC-1A I B -0.1A
B.C. Current Gain HFE * 40 I C -50mA Vce-IV

20 100 IC-500mA Vce-IV
10 I C -1A Vce-IV
Current Gain- Bandwidth Product fT IC-250mA VCE-10V
Collector-Base Capacitance Cob 100 Pi

1
VcB-lOV Ig-0
f - 1MHz
Small Signal Current Gain hfe 25 I c -250mA Vce-IOV

f-lkHz
* Pulse Test j Pulse Width-0.3mS, Duty Cycle-1^
1.6r
VE NOHMALIZEI)
V' *~ Y
CE(sat) &
VBE t" J
C
1 10
12.77.8700E
l
C (A) C (A)
S110
NPN SILICON PLANAR PHOTO TRANSISTOR CHIP
THE S110 IS AN NPN SILICON PLANAR PHOTO

1.016m
TRANSISTOR CHIP DESIGNED FOR APPLICATIONS
REQfflRIHG HIGH RADIATION SENSITIVITY AND
STABLE CHARACTERISTICS.
THE REAR SURFACE IS COVERED BT A GOLD

LAYER TO ELIMIHITE THE NECESSITY FOR
PREFORMS IN ASSEMBLY, AND THERMAL COMPRESSION
OR ULTRASONIC BONDING TECHNIQUE MAY BE USED
UPON THE ALUMINIUM TOP CONTACTS.
CHIP GEOMETRY
PHYSICAL DETAILS
Chip Size « 1.016 + 0.101m square (40 + O.lail square)
Chip Thickness » 0.I5 * 0.025nm (6 + lmil)
Bonding Pads Area t Emitter 1 0.143am square
Base 1 0.145am square
PRINCIPAL DEVICE t FPT 100 series
ELECTRICAL CHARACTERISTICS IN DARKNESS AT Ta-25°C
Collector-Eaitter Breakdown Voltage »?CEO - 50 V IC-lpA lB-0
Eaitter-Collector Breakdown Voltage bveco 5 V iE-O.lmA IB-O
Collector Cutoff Current JCEO 100 nA VCE-15V lB-0
D.C. Current Gain hfe • 150 350 850 VCE-5V IC-laU
* Hyg can be grouped at ax/ain - 2 t 1 upon request.

S1 10
LIGHT CURRENT (ij,) CHARACTERISTICS
IL » HfB
10
= B»10mW/o«»g =
IL
•o.^mW 8* •
-H-.2aW/c«2
0.3
0.1
0.03 Tx»25"C
VC E-5V
0.01
200 400 600 800 1000
HPE ® IC-lmA
TO B.C. POWER SUPPLY
Tungsten lamp © 2854°K colour temperature

(Type i 6V21C.P. tungsten lamp)
Irradiance (h) - Radiated Power from Lamp

4Th2
where h ia the distance

measured from plan of
filament to plan of chip.
SPECTRAL CHARACTERISTICS t a 25°C) SWITCHING CHARACTERISTICS (TA-25°C)

The switching characteristics is
RELATIVE RESPONSE measured with the following circuit
vs WAVELENGTH arrangement.
100
r
S 80 / <j*Vcc -5V
/ jlL-lmA
g 60 /
GaAs
B / Source
40 / t L^ Light current rise times2.8uS typ.
K H —
y
F* LightVsurrent fall timei2.6uS typ.
i 20 / I—OODT
/ ?100A
/
• 2 -4 .6 .8 1 1.2
WAVELENGTH (jim)
3.78
2N930 2N3548
COMPLEMENTARY
CASE TO-18
Tffi2H930 (NPN) AND 2N3548 (PNP) ARE SILICON
PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF
SMALL SIGNAL AMPLIFIERS AND DIRECT COUPLED
CIRCUITS.
ABSOLUTE MAXIMUM RATINGS *.««««..* 2N930(NPN) 2N3548(PNP)

Collector-Emitter Voltage VcEO 45V 45V
Collector Current IC 100mA «* 100mA
Total Power Dissipation (Ta*25<>C) p tot 300mW 400mW
Junction Temperature Ti 175«C 200°C
Storage Temperature Range T stg -65 to 200OC
** 30mA in JEDTO registration.
ELECTRICA CHARACTERISTICS (Ta-25°C unless otherwise noted)

2N950 2N3548
MIN MAX MIN MAX
Collector-Hotter Breakdown LVctdo 45 45 V I c -10mA (Pulsed)
Voltage IB-O
Collector Cutoff Current ICES 10 10 nA VCE-45V VBE-0
10 10 VC E-45V Vbe-O
TA-170OC
Emitter Cutoff Current lEBO 10 10 nA VEB-5V Ic-0
Collector-Emitter Saturation VcE(sat) 1 1 V IC-10mA IB-O. 5mA
Voltage
Base-Emitter Breakdown Voltage VBE(sat) 0.6 1 0.6 1 V IC-10mA lB-0.5mA
D.C. Current Gain HpE 100 300 100 300 IC-10uA VcE-5V
150 IC-100uA VcE-5V
150 IC-50CVA VCE-5V
600 600 IC-10mA VCE-5V
20 20 IC-10uA VCE-5V
TA— 55°C
Current Gain-Bandwidth Product fT 30 MHz I c -0.5mA VCS-5V
60 150 MHz iC-lmA VCE-5V
Collector-Base Capacitance Cob e 8 PF V'cb-5V Ie-0 f-lMHz
Noise Figure NF 3 4 dB IC-10uA VCE-5V
- RG-lO^f-lOHz-l-JKHz
2N930 2N3548
PARAMETER SYMBOL 2N930 2N3548 UNIT TEST CONDITIONS

MIN MAX MIN MAX
Small Signal Current Gain hfe 150 600 IC-1»A VCE-5V f-lKHz
COMMON BASE h - PARAMETERS (for 2N930 only)

h - PARAMETER SYMBOL MIN MAX UNIT TEST CONDITIONS
Input Impedance hib 25 32 IC-lmA VQB-5V
Output Admittance f-lKHz
hob 1 ur
Voltage Feedback Ratio h rb 6 xlO4
TYPICAL CHARACTERISTICS AT TA.28«»C
D.C.CURRENT GAIN V BE AND vCE(tat)

I
mm 1 inn 1
-
Pulse Test
VB E
'
• 'CE-5V
VCE (sat)
... a 1
=lH -rrtt
c <mA) IC (niA)
CURRENT GAIN - BANDWIDTH PRODUCT BROAD BAND NOISE FIGURE

1
ji
I I
1
(MHz)
i! 1
'CE- >v __
1
!
II 1
;|
- "T |;
i***
100
Ti
1!
1 !
1 II i 1 1
100 1000
l
c (mA)
2.78.45O0B.045OB
2N2102 2N4036
COMPLEMENTARY
CASE TO-39
THE 2N210?(NPN) AND 2N4036(PNP) AHE COMPLEMENTARY
SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF
MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR
SWITCHING APPLICATIONS.
ABSOLUTE MAXIMUM RATINGS n. w *-»— .«-«««.—.

• «-«•*.
Collector-Base Voltage VCBO

Collector-Emitter Voltage VceO
Emitter-Base Voltage VEBO
Collector Current IC
Total Power Dissipation (Tc<25°C) P to t
(TA ^250C)
Operating Junction & Storage Temperature Tj, T a tg
ELECTRICAL CHARACTERISTICS (TA-250C unless otherwise noted)
2N2102 2N4036
MIN MAX MIN MAX-
Collector-Base Breakdown Voltage BVC B0 120 90 V iC-O.lmA IE-O
Collector-Emitter Breakdown Voltage LVCER * 60 V IC-100mA RBE-10A-
Collector-Emitter Breakdown Voltage LVcEV * 65 V IC-100mA VEB-1.5V
Collector-Emitter Breakdown Voltage LVCEO • 65 65 V IC-100mA IB-O
Emitter-Base Breakdown Voltage BVEBO 7 7 V lE-0.1mA Ic-0
Collector Cutoff Current ICBO 2 nA VCB-60V Ig-0
100 nA VCB-90V Ig-0
Collector Cutoff Current ICEV 100 VCE-3OV VEB-1.5V
J*
TA-150OC
Emitter Cutoff Current lEBO 5 20 nA VEB-5V IC-0
D.C. Current Gain Hyg • 10 IC-O.OlmA Vce-IOV
20 20 IC-O.lmA VCE-lOV
40 120 40 140 IC-150aA VCE-lOV
25 20 IC-500mA VCE-lOV
10 IC-lA VCE-lOV
35 IC-lOmA VCE-lOV
20 200 IC-150mA Vce-2V
2N2102 2N4036
2N2102 2N40J6
MIN MAX MIN MAX
Collector-Emitter Saturation Voltage VCE(sat)* 0.5 0.65 V IC-150mA lB-15mA

Base-Emitter Saturation Voltage VBE(sat)« 1.1 1.4 V IC-150mA lB-15mA
Collector-Base Capacitance Cob 10 30 PP VcB-lOV lE-0
f-lMHz
Emitter-Base Capacitance Cib eo 90 PP I c -0
VEB-0.5V
f-lMHa
Noise Figure HP 6 dB IC-0.3mA VCE-10V
f-lkHz RG-510XL
Turn-On Time ton 110 nS IC-150mA lBl-15mA
Vcc-30V
Turn-Off Time toff 700 nS IC-150mA
IB1— lB2-15mA Vcc-30V|
* Pulse Test- t Pulse Width«0.3mS, Duty Cycle-1?&
Ptot VS TA
ten - «off SWITCHINO
s$
ft
^ »
(w)
^ Nfc*
t
TO OSCILLOSCOPE
tr<15nS ffo n
tf <15nS Z| M * 100 k(l
50 100
•Q *___
150
\ 200
Ta (°c)
HPE (NORMALIZED) vs Ic
,
VCE(sat ) & VBE(sat) & VB e vs Ic
1 »u lllll
l l M l III lll »
l I I I llll
'
i
|
0.8
VOLT
10 100 1000
10 100 1000
IC («A)
IC («A)
i.7a.8iooB.oeiOB
2N2222 2N2222A PN2222 PN2222A
NPN SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES
THE 21C2222, 252222A, PN2222, PN2222A ARE CASE TO-18 CASE TO-92A
NFN SILICON PLANAR EPITAXIAL TRANSISTORS
FOR GENERAL PORPOSE AMPLIFIERS AND MEDIUM
SPEED SWITCHING APPLICATIONS. THEY ARE
COMPLEMENTARY TO THE PNP TYPE 2N2907»
2N2907A, PN2907, PN2907A RESPECTIVELY.
THE 2N2222, 2N2222A ARE PACKED IN TO-18.
THE PN2222, PN2222A ARE PACKED IN TO-92A. CBE EBC
2N2222 PN2222
2N2222A PN2222A
ABSOLtTTE MAXIMUM RATINGS 2N2222 2N2222A FN2222 PN2222A
Collector-Base Voltage Vcbo 60V 75V 60V 75V
Collector-Bnitter Voltage Vceo 50V 40V 30V 40V
Emitter-Base Voltage vEBO 5V 6V 5V 6V
Collector Current IC 0.8 A 0.8A 0.8A 0.8A
Total Power Dissipation (^c <25°C) p tot 1.8W 1.8W 1.2W 1.2W
(Â $25°C) 500mW 500mW 500mW 500mW
Junction Temperature TJ 175°C 175°C 150°C 150°C
Storage Temperature Range Tstg -65 to 200°C -55 to 150°C
otherwise noted)
2N2222 2N2222A
PARAMETER SYMBOL PN2222 PN2222A UNIT TEST CONDITIONS
MIN MAX MIN MAX
Collector-Base Breakdown Voltage B^CBO 60 75 V I C -0.01«A Ie-0
Collector-Biiitter Breakdown Voltage LVceo » 30 40 V I c -10mA lB-0
Emitter-Base Breakdown Voltage BVebo 5 6 V Ig-O.OlmA lc»0
Collector Cutoff Current z CBO 10 nA VCB-50V Ie-O

10 nA VCB-60V lE-0
10 uA VCB-50V Ie-O Ta-150°C
10 VCB-60V IE-O Ta-150°C
Collector Cutoff Current ICEV 10 nA VCEÔV VEB-5V
Emitter Cutoff Current Iebo 10 10 nA VEB-3V IC-0
Base Cutoff Current IBL 20 nA VCE-60V VBB-3V

2N2222 2N2222A PN2222 PN2222A
2N2222 2N2222A
PARAMETER SYMBOL PN2222 PN2222A
UNIT TEST CONDITIONS
MIN MAX MIN MAX
Collector-Emitter Saturation vCE(sat)« 0.4 0.3 V I C -150mA IB-15«»A
Voltage 1.6 1.0 V IC-5O0BA lB-50mA
Base-Quitter Saturation Voltage vBE(sat)« 1.3 0.6 1.2 V IC-150mA lB-15mA

2.6 2.0 V IC-500mA lB-50mA
D.C. Current Gain HyE * 35 35 IC-O.lmA VCE-10V

50 50 IC-lmA VcE"10V
75 75 I c -10mA VCE -10V
100 300 100 300 IC-150mA VC e-10V
30 40 I c -500mA Vce-IOV
50 50 IC-150mA VCE-IV
35 IC-10mA VC E-10V Ta— 55°C
Current Rain-Bandwidth Product fT 250 300 MHz IC-20mA VCE-20V
Collector-Base Capacitance Cob 8 e pP VCB -10V I E -0 f-lOOkHz
Emitter-Base Capacitance Cib 25 25 PP VEB-0.5V Ic-0 f-lOOkHz
c ollector-Base Time Constant C c rbb' 150 pS IC-20mA VCE-20V

f -31.8MHz
Noise Figure NP 4 dB IC-O.lmA Vce-IOV

f-lkHz RG-lkA
Input Impedance hie 2 8 Kfl IC-lmA Vce-IOV f-lkHz

0.25 1.25 xn IC-lOmA Vce-IOV f-lkEz
Voltage Feedback Ratio -'

h re 8 xlO iC-lmA VcE-lOV
1
f-lkHz
4 xlO-4 IC-lOmA Vce-IOV f-lkHz
Small Signal Current Gain hfe 50 300 IC-lmA VcE-lOV f-lkHz

75 375 IC-10mA VCE-IOV f-lkHz
Output Admittance h oe 5 35 IC-lmA VCE-IOV f-lkHz

25 200 uxr IC-lOmA Vce-IOV f-lkHz
Delay Time td 10 nS IC-150mA lBl-15mA Vcc-50V
Rise Time tr 25 nS IC-150mA lBl-15mA Vcc-30V
Storage Time ts 225 nS I c -150mA lBl--lB2-15mA

7OC -30V
Pall Time *f 60 nS I c -150mA IB1— lB2-15mA

ITcc-30V |
* Pulse Test « Pulse Width-0.3mS, Duty Cycle-l^f

2N2222 2N2222A PN2222 PN2222A
SWITCHING TIME TEST CIRCUITS
to* SWITCHING V..--MV Vec-OtV toff SWITCHING
:n
rw~ lorn
z IN - so n
Tc <Mm
All waveforms are monitored on an oscilloscope with Rin^lOOKil,

C in $12pF, tr $5nS.
j
Ptot vs ?A ? tot VS TA
2.0
2N2222 PN2222
r"&££ ii.K
Ptot H 1.5
*v&»-
(W) 1.0
\h Pfot
1.0
^ ^
(W)
0.5 >&. 0.5 **»
V
>3
^* k
50 100 150 200 50 100 150 200
TA (° C ) TA (0 C )
2N2222 2N2222A PN2222 PN2222A
(
HPE vs ic VCE(sat) & V3E sat ) ts IC

(
250 2.0
'III
[
VCE -10V
t Tula e Test
H 1
1 IC-IOIb
"""nPuise Test
IN Nil Mil
200 1.6 1
n n
HPE 150 1.2 n Jffl
1 ffl
VOLT
100 \ 0.8 •VSSJa^}
vlll
t
50 Kl 0.4
flH
t
M t
HI
1 Li
ill
"(:s(sa-t I 1
10 100 10 100 1000

IC IC (mA)
(mA)
rT vs ic
SWITCHING TIME vs IC
500
VCE-20V
400 ** Hi
'
/
f : z\
300 I . ,
E
1
il .
200 7 3 II!
(MHz) /
li
10 100 10 100 1000

IC 0»A) IC (mA)
1.78.6100B
2N2586 2N3964
COMPLEMENTARY
CASE TO-18
THE 2N2366 (NPN) AND 2N39»4 (HIP) ARE COMPLEMENTARY
SILICON PLANAR EPITAXIAL TRANSISTORS TOR USE IN AF
LOW NOISE SMALL SIGNAL AMPLIFIER CIRCUITS.
ABSOLUTE MAXIMUM RATINGS )*»<•***«* 2H2586(NPN) 2N3964(PNP)

Collector-Emitter Voltage VceO 45V 45V
Collector Current IC lOOmA** 200mA
Total Power Dissipation (Tc<25°C) Ptot 600mW 1.2W
(TA«25°C) JOOmW 360mW
Junction Temperature Tj 175°C 200OC
Storage Temperature Range Tstg -65 to 2000C
** 30mA in JEDEC registration.
PARAMETER SYMBOL 2N2586 2N3964 UNIT TEST CONDITIONS

MIN MAX MIN MAX
Collector-Base Breakdown Voltage BVcbo 60 45 V IC"0.01mA Ie»0
Collector-Emitter Breakdown BVcES 45 V IC-O.OlmA VBE-0
Voltage
Collector-Emitter Breakdown LVcEO 45 V IC-lOmA(Pulsed)
Voltage IB-O
45 V IC-5mA(Pulsed) Ib-0
Emitter-Base Breakdown Voltage BVBBO 6 6 V lE-0.01mA Ic-0
Collector Cutoff Current ICBO 2 nA VCB-45V IE-O
10 nA VCB-40V Ie-0
Collector Cutoff Current ices 2 nA VCE-45V Vbe-0
10 nA VCE-40V VBE-0
10
^ VCE-45V VBE-0 Ta-170°C
10
^ VCE-40V VBE-0 Ta-150°C
2N2586 2N3964
2N2586 2N3964
PARAMETER SYMBOL UNIT tbt oaromore
ran MAX MIN MAX
Emitter Cutoff Current Iebo 2 nA V£B-5V IC"0

10 nA VSB-4V IC-0
Collector-Emitter Saturation VCE(sat) 0.5 0.25 V IC-10mA IB-0.5«A

Voltage 0.4 V IC-50«A IB-5»A
Base-Emitter Saturation Voltage BE(sat) 0.7 0.9 0.9 V IC-lOaA IB-0.5«A
0.95 V lC-50mA IB-5«A
B.C. Current Rain HFE 60 180 IC-lpA VCE-5V

120 360 250 500 IC-10pA VCE-5V
250 IC-100jlA VCE-5V
150 IC-500UA VCE-5V

250 600 IC-lmA VQE-5V
600 200 IC-10mA VCE-5V
180 IC-50«A VCE-5V
40 100 IC-10>U VCI-5V
TA— 55<>C
800 IC-lmA VCE"5V
TA-100OC
90 IC-50mA VCE-5V
TA— 55°C
Current Gain-Bandwidth Product fT 45 50 160 IC-0.5mA VCE-5V
Collector-Base Capacitance Cob 7 6 pF VCB-5V IE-O f-lMHz

Emitter-Base Capacitance Cib 15 pF VEB-0.5V IC-0 f-lMHz
Noise Figure NF
3 dB IC-10uA VCE-5V
RG-lOKo f-lkHz
3.5 dB IC-ljiA VCE-5V
RG-lMft f-lkHz
2 dB IC-10/»A VCE-5V
RG-lOKfl f-lOKHz
2 dB IC-luA VCE-5V
RG-IMQ, f-lOKHz
Noise Figure NF
2 dB I C -2C>»A VCE-5V
RG-IOKA. f-lOHz-lOKHz
2 dB IC-20uA VCE-5V
Rq-IOKA f-lOKHz
2 dB IC-20uA VCE-5V
RG-IOKA f-lKHz
4 dB IC-20)iA VCE-5V
RG-IOKA f-lOOHz
8 dB IC-20uA VCE-5V
RG-10Kfi f-lOHz
Input Impedance hie 4.5 18 6 20 Kft IC-1«A VCE-5V f-lKHz

Voltage Feedback Ratio hpe 10 xlO" 4 IC-1«A VCE-5V f-lKHz
Small Signal Current Gain hfe 150 600 250 700 IC-1«A VCK-5V f-lKHz
Output Admittance hoe 100 5 50 jlV IC-lmA VCE-5V f-lKH*
2.78.45O0B.O45OB/0430B
2N2907 2N2907A PN2907 PN2907A
PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES
CASE TO-18 CASE TO-92A

THE 2H2907, 2H2907A, PN2907t PW2907A ARE
PHP SILICON PLANAR EPITAXIAL TRANSISTORS
FOR GENERAL PURPOSE AMPLIFIERS AMD MEDIUM
SPEED SWITCHING APPLICATIONS. TRET ARE
COMPLEMENTARY TO THE HPH TYPE 2N2222,
21(2222 A, PN2222, PR2222A RESPECTIVBLT.
THE 2H2907, 2H2907A ARE PACKED IN T0-I8. CBE EBC
THE PW2907t PE2907A AR13 PACKED IH TO-92A.
2N2907 PN2907
2N2907A PN2907A
ABSOLUTE MAXIMUM RATINGS 2N2907 2N2907A PN2907 PN2907A

Collector-Base Voltage -VCBO 60V 60V 60V 60V
Collector-Emitter Voltage -Vcbo 40V 60V 40V 60V
Baitter-Base Voltage -VgBO 5V 5V 5V 5V
Collector Current -ic 0.6A 0.6A 0.6A 0.6A
Total Power Dissipation (Tc« 25°C) ptot 1.8V 1.8W 1.2V 1.2V
(Ta«25°C) 40GHW 400mW 500mW 500BW
Junction Temperature TJ 200°C 200°C 150OC 150°C
Storage Temperature Range TStg -65 to 200°C -55 to 150°C
2N2907 2N2907A
PARAMETER SYMBOL PN2907 PN2907A UNIT TEST CONDITIONS
MIN MAX MIN MAX
Collector-Base Breakdown Voltage -BVcbo 60 60 V -IC-O.OlmA IE-0
Collector-Emitter Breakdown Voltage -LVcbo * 40 60 V -IC-10mA Ij-0
Emitter-Base Breakdown Voltage -BVEB0 5 5 V -lE-0.01mA Ic-0
Collector Cutoff Current -1 20 10 nA -VCB-50V Ie-O

CB0
20 10 -VCB-50V Ib-0 Ta-150°C
Collector Cutoff Current _I CET 50 50 nA -Vce-JOV -VEB-0.5V
Base Cutoff Current -Ibl 50 50 nA -VCE-30V -VEB-0.5V
Collector-Emitter Saturation -VcE(sat 1* 0.4 0.4 V -IC-150mA -lB-15mA

Voltage 1.6 1.6 V -IC-500mA -lB-50mA
2N2907 2N2907A PN2907 PN2907A
212907
PARAMETER SYMBOL PN2907 UHIT TEST COKDITIOHS
MIH MAX
Base-Emitter Saturation Voltage VBE(sat)» 1.3 1.5 y -IC-150BA -Ib-15bU

2.6 2.6 V -Ic-500^ -Ib-50«A
D.C. Current Gain Hpg; # 55 75 -IC-O.lJU -CE-IOT
50 100 -IC"1»A -YCB"10V
75 100 -IC-10«A -VCB-10V
100 500 100 500 -IC-150«A -VCI-IOY
50 50 -IC-500«A -Tci-lOV
Current Cain-Bandwidth Product fT 200 200 MHs -IC-50BA -70E-20Y
Collector-Base Capacitance Cob 8 8 pP -Vcb-107 IB-O

f-lOOkHs
Emitter-Base Capacitance Cib 50 30 PP -VEB-2V Ic-0

f-lOOkHs
Turn-On Time *on 45 nS -IC-150mA -IB1-15«A

-VCC -30V
Turn-Off Time toff 100 nS -IC-150mA -In-lB2-15«A

-VC c-6V
Delay Time td 10 10 nS -IC-150«A -lBl-15»A

-Ycc-30V
Rise Time tr 40 40 nS -IC-150mA -IB1-15«A

-Vcc-50V
Storage Time 80 80 nS -IC-150«A -Ib1-IB2-15^

*s
-Vcc-6V
Pall Time tf 50 30 nS -I c -150mA -IB1-IB2-15«A
-Vcc-<*
Pulse Test i Pulse Vidth«0.3mS, Duty Cycle-ljS

2N2907 2N2907A PN2907 PN2907A
3WITCHIWG TIME TEST CIRCUITS
to* SWITCHING t,« SWITCHING
Vm uu
.•xj"^: :xj
All waveform are monitored on an oscilloscope with

Rin>100Ka, Cin€l2pF, tP «5nS.
Ptot vs TA Ptot vs ?A
2.0
312907 ]PW2907
1.5
V& 1.5
N^
1.0 k+ p tot
i.o ^V< V. i
Ptot
(w)
0.5
^ V
\fc
(W) N^ r« .
& & 0.5 ,£b

J9«
La jyj
50 100 150 200 50 100 150 200
T A (°C) TA (°C)
2N2907 2N2907A PN2907 PN2907A
T
( A-25°C unless otherwise noted)
HFE vs ic CE( sat ) A VBE(sat) VB ic

250
jlJJII
i mil 111
lllll
T Pulse Test
IC-10IB
200 |j |||
III
m n
150
1 III
HI |||1 u
Hpj; !
-VOLT
| Ml
J
llll
II
M
1
100 |
,
I'lllll
y| i
1
ft
50
/
-7 nFM II
Pu.Is e Tea t
Ill
III
III
VI
li
llll
"
II
VCBV." at'
Mi
II
r 10 100 1000 10 IOC 1000.

- IC (mA)
-IC (mA)
fT vs Ic SWITCHIUG TIME vs ic
500 250 1
-CE-20V 1 1 -Vcc-15V
II Hill
II
• ml 1 C-IOIbi-1 MB2
1
400 200
V
1
t III
i
!jj
Hli
fT 500
i
150
(nS) X, x
(MHa)
200 1
j!
|! 100
llll
li
V --
1
S!*
1
1
100
!
50 llli
1
s""" ,11
III
1
J
Ill
lllll _i,
II II ilii
10 100 1000 .0 100
-IC (mA) - l C (-A)
1.78.0610B
2N3019 2N3020
THE 2W3019. 2H302O ARE SPH SILICON PLANAR

EPITAXIAL TRANSISTORS FOR AJ MEDIUM POWER
DRIVERS AND OUTPUTS, AS WELL AS JOR SWITCH-
ING APPLICATIONS UP TO 1 AMPERE. THEY ARE
COMPLEMENTARY TO THE PHP 2H4033i 2H4031.

Collector-Base Voltage TCBO 140V
Collector-Eflitter Voltage VCEO 80V
EaitjCer-Base Voltage ebo 7V
Total Power Dissipation (
TC<25°C) p tot 5W
(Ta^25°C) SOOfflW
Operating Junction & Storage Temperature Tj, Tstg -65 to 2000C
Ptot vs TA HPE NORMALIZED) VS ic
III
TA-25 C
ulse Test
1.6 .. _ 1 Ml
Ptot .. _ nun
(W) 1.2 . . llll'l
sA *-"
., -: illH
for
** 0.8 ^ . .
s3 .. _
fr
rv^j . .
0.4
No fa _
jg«t Si.ale ^
..
n n _ UN
I\ V 1
ic10 1'>0 20 10 100 1000

*A (°C)
2N3019 2N3020

2H3019 2N5020
PARAMETER SYMBOL UNIT TEST COHDITIOHS
MIH MAX MIN MAX
Collector-Base Breakdown Voltage BVCBO 140 140 V IC-O.lmA IE-O
Collector-Emitter Breakdown Voltage LVCEO » 80 80 V IC-30mA IB-0
Emitter-Base Breakdown Voltage BVebo 7 7 V lE-0.1mA Ic-0
Collector Cutoff Current ICBO 10 10 nA VCB-90V IE-O
10 10 uA VCB-90V IE-O
TA-150OC
Emitter Cutoff Current IEBO 10 10 nA VEB-5V IC-0
Collector-Emitter Saturation Voltage VCE(sat) 0.2 0.2 V IC-150mA lB-15mA
0.5 0.5 V IC-500mA lB-50mA
Base-Emitter Saturation Voltage VBE(sat)» 1.1 1.1 V IC-150mA IB-15aA
B.C. Current Gain B*E • 50 30 100 IC-O.laA VCE-lOV
90 40 120 IC-lOmA VCE-lOV
100 500 40 120 IC-150mA VCB-lOV
50 30 100 IC-500mA VCE-lOV
15 15 IC-IA VCE-lOV
40 IC-150mA VCE-lOV
Ta— 55°C
Current Gain-Bandwidth Product fT 100 80 MHz IC-50mA VCE-lOV
Collector-Base Capacitance Cob 12 12 PP VCB-lOV IE-O
Emitter-Base Capacitance Cib 60 60 PP VEB-0.5V IC-0
f-lMHa
Collector-Base Time Constant Ccrbb 1
400 400 PS IC-10mA VCE-lOV
f-4MHs
Noise figure NP 4 dB IC-0.1«A VCE-lOV
Rr,-1K«. f-lkH«
pmall Signal Current Gain (f-lkHz) hfe 80 400 30 200 IC-lmA VCE-5V
Pulse Test i Pulse Wldth-0.3mS, Duty Cycle«l#
VCE(eat) & VBE(sat) & VBE vs IC fT vs Ic

1.0
ilHIIII
0.8- — Li
vi
ft ' _.
r^-ioxs^,
0.6h .JJIILt*;25°C
>ul8e Test
VOLT 4 VC&'V'-t- (MHi)
0.4-
0.2- 111
VCE(»at)
icwioib*;
0*
10 100 1000 •10 100 1000
IC (mA) IC (.A)
1.78.8100B
2N3053 2N4037
COMPLEMENTARY
CASE TO-39
THE 2H3053 (NPN) AND 2N4037 (PNF) ARE COMPLEMENTARY
SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF
MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR
C E B
ABSOLUTE M/XIMUM RATINGS *— «»-• »— « 2N3053(NPR) 2N4037(PNP^

Collector-Base Voltage VCBO 60V 6oy
Emitter-Base Voltage VEBO 5V f
Collector Current IC 0.7A 1A
Total Power Dissipation (Tc<25oC) p tot 7W
(Ta< 250c) 1W
Operating Junction & Storage Temperatu* Tj, T8 tg -65 to 20C-OC

2N3053 2N4037
ION MAX MIST MAX
Collector-Base Breakdown Voltage BVcbo 60 60 V IC-O.lmA IgV)
Collector-Eoitter Breakdown Voltage LVCER * 50 V IC-lOOmA RBE-lOfl-

60 V IC-100mA RBE-200n
Collector-Emitter Breakdown Voltage 1VCEV » 60 V IC-lOOmA V1B-1.5V
Collector-Emitter Breakdown Voltage LVCEO * 40 40 V IC-100mA IB-O
Emitter-Base Breakdown Voltage BVebo 5 7 V iE-O.lmA IC-O
Collector Cutoff Current ICEV 0.25 VCJ-30V VKB-l.'SV
Collector Cutoff Current ICBO 0.25 1* VCB-60V Ie-0
Collector Cutoff Current ICEO 5 VCE-30V IB-O
F*
Emitter Cutoff Current IEBO 0.25 VEB-4V IC-0
1 uA VEB-5V IC-0
Collector-Emitter Saturation Voltage CE(sat)* 1.4 1.4 V I C -150mA lB-15mA
Base-Emitter Saturation Voltage BE(sat)» 1.7 V IC-150mA lB-15mA
D.C. Current Gain HFE * 15 IC-lmA VCE-10V

50 250 50 250 IC-150mA VCE-10V
25 lC-150mA VCE-2.5V
2N3053 2N4037
PARAMETER SYMBOL 253053 2N4037 UNIT TEST CONDITIONS

MIIT MAX NUT MAX
Current Gain-Bandwidth Product 100 60 MHz IC-50aA VCB-10V
Collector-Base Capacitance Cob 15 30 pF VCB-10V Ig-0
f-lMHz
Emitter-Base Capacitance Cib 80 90 PP VEB-0.5V IC-O
f-lKHz
« Pulse Test i Pulse Width-0.3mS, Duty Cycle-ljf
Ptot TA HPE (NORMALIZED) V9 ic

2.0
lllll
T A -250 C
f Pulse Test
s^ M
mill
pi
ft
ptot d 1.2 MM
n] »
o
(w)
^V £. 0.8
^ fc •
m 0.4
J|[Hl
Vr
at link lllll
lllli!
50 100 150 200 10 100 1000

TA IC (»A)
(°C)
VpE(sat) & YBE(sa t) & ?BE vs IC *T vs *C

250
TA-25°C
~v:
200 Tfll
150 1
VOLT (MHs)) ... -,£ '"1 \.
100 s \
,,' f~1\
*
30
. lllli
10 100 1000 10 100 1000
IC (oA) IC («A)
1.78.8100A.0810A
2N3107 through 2N3110
CASE TO-39
THE 2R3107 THROUGH 2M3110 ARE NPN SILICON PLANAR
EPITAXIAL TRANSISTORS TOR AF MEDIUM POWER DRIVERS
AID OUTPUTS, AS WELL AS FOR SWITCHING APPLICATIONS
JS9
UP TO 1 AMPERE. THEY ARK COMPLEMENTARY TO THE PNP
2N4032, 2N4030.
C E B
2N3107 2NJ109
ABSOLUTS MAXIMUM RATINGS 213108 2N3110
Col leo tor-Baa e Voltage VCBO 100V . 80V
Total Power Dissipation (Tc^25°C) Ptot 5W
(T A <25°C) 800mW
Operating Junction & Storage Temperature Tj, T s tg -65 to 200°C

Collector-Bose Breakdown Voltage BVcBO IC«0.1mA lE-0
2N3107, 2N3108 100 V
2N3109, 2N3110 80 V
Collector-Emitter Breakdown Voltage LVceO » IC-30mA Ib-0
2N3107, 2N3108 60 V
2N3109, 2N3110 40 V
Emitter-Base Breakdown Voltage BVebO 7 V iE-O.lmA lc=0
Collector Cutoff Current ICES 10 nA VCE-60V Vbe-0
Collector Cutoff Current (T^«i5ooc) ICBO 10 J»A VCB-60V IE-O
Emitter Cutoff Current IEBO 10 nA VEB-5V Ic-O
Collector-Emitter Saturation Voltage VcE(sat)* 0.25 V lC-150mA lB-15mA
1.0 V IC-1A IB-0.1A
Base-Emitter Saturation Voltage VBE(sat)* 1.1 V IC-150mA lB*=15tnA
2.0 V IC-1A Ib-O.IA
D.C. Current Gain H?E *
2N3107, 2N?! 09 only 35 I c -0.1mA VcE-lOV
100 300 IC-150mA VCE-1V
40 IC-500mA VnE-lOV
PARAMETER SYMBOL MIN MAX UNIT TOST CONDITIONS

2*3107, 2N3109 only Hj*E * 30 IC-150mA Vcs-lOV TA — 5&
D.C. Current Gain HPE * 20 IC-O.lmA Vqe-IOV
40 120 IC-150mA VCE-1V
2N3108, 2N3HO only 25 lC-500mA VCE-10V
15 IC-150mA Vce-IOVTa— 55t
Current Cain-Bandwidth Product fT lC-50mA VCE-IOY

2H3107, 2N3109 70 MHz
2N3108, 2N3HO 60 MHz
Collector-Base Capacitance Cob VCB-10V Ie-0 f-lMHz
2N3107, 2N3108 20 pF
2N3109, 2N3HO ?5 pF
Emitter-Base Capacitance Cito 80 PF VEB-0.5V I c -0 f-lMHz
Noise Figure (f-lKHz) NF 7 dB IC-30uA YCE-10V Rc-lKfl-
Turn-On Time ton 200 nS IC -150mA lEi-7.5mA
Turn-Off Time 2N3107, 2N3109 tcff 1000 nS IC-150mA 1B1— lB2-7.5mA
2N3108, 2N3HO 600 nS
» Pulse Test : Pulse Width-0.3mS, Duty Cycle-1^
Ptot vs TA
ton -toff SWITCHING
Ptot
-TL»; (w)
&
*•„
N»
A
>£«f
TO OSCILLOSCOPE No He a
t, OF INPUT PULSE < IS r t_S; nk_
tr >^1Sni
tf OP INPUT PULSE < 15 r Z| N • 100 kR
50 100 150 200
TA (<>C)
VCE(sat) & VBE(sat) & VBE vs IC
#
"' l.Or
""HI T A .25°C
'
'
'Pulse Test
10 100 1000
X C (mA)
10 100 1000
JC (mA)
1.78.8100B/A
2N3563 2N5130 2N5132
PN3563 PN5130 PN5132
THE ABOVE TYPES ARE NPN SILICON PLANAR CASE TO-106 CASE TO-92A
EPITAXIAL TRANSISTORS FO* RT SMALL SIGNAL
APPLICATIONS.
J
2N/PN3563 fip m 600MHz min 2N3563 PN3563 1
2N5130 PK5130 1
2N/PN5130 ftp » 450MHz min
2N5132 PN5132 1
2N/PN5132 ftp - 200MHz min 1
CBE E3C
2N3563 FN3563
ABSOLUTE MAXIMUM RATINGS 2N5130 2N5132 FN5130 PN5132
Emitter-Base Voltage vEB0 2V 3V '
2V 3V
Collector Current ic 50mA 50mA 50mA 50mA
Total Power Dissipation (Ta^25°C) Ptot 200mW 200mW 250mW ?50ciW
Operating Junction & Storage Temperature T 0» T 8 tg -55 to 125°C -55 to 150°C

2N/PN3563 2N/PN5130 2N/PN5132
MIN MAX MIN MAX MIN MAX
Collector-Base Breakdown BVcBO 30 30 V IC-O.lmA IE-0
Voltage . 20 V IC-0.01mA IE-0
Collector-Emitter Breakdown LVCEO « 12 12 V IC-3mA IB-0
Voltage 20 V IC-10mA lB-0
Emitter-Base Breakdown BVebO 2 2 3 V IE-0. 01mA Ic-0
Voltage
Collector Cutoff Current ICBO 50 nA Vcb-15V Ie-O
50 50 nA VCB-10V IE-0
Collector Cutoff Current ICBO 5 UA VCB-15V IE-0
(TA-65°C) 5 5 VCB-10V IE-0
Collector-Emitter Saturation VCE(saV • 0.6 02 V lC-10mA IB-lmA
Voltage
Base-Emitter Saturation BE(sat; 1 0.9 V lC-10mA IB-lmA
Voltage
Base-Emitter Voltage YBE * 1 0.9 V IC-10mA VCE-10V
D.C. Current Gain HpE * 20 200 15 250 IC-8mA VCE-10V
50 400 IC-10mA VCE-10V
Current Gain-Bandwidth fT 600 450 MHz IC-8mA VCE-10V
Product 200 MHz IC-10mA VCE-15V
* Pulse Test t Pulse Width-0.3mS f Duty Cycle-1^
' 1
2N3563 2N5130 2N5132

PN3563 PN5130 PN5132
2N/PN3563 2N/PN5130 2N/PN5132

Collector-Base Capacitance Cob 1.5 1.7 1.3 1.7 1.8 3.5 PF VCB-lOV Ie-0
f-lMHz
Feedback Time Constant Ccrbb' 8 18 25 15 PS IC-8mA Vce-IOV
f -79.8MHz
Ccrbb' 25 18 25 PS IC-lmA Vce-5V

f -31.8MHz
Available Power Gain Gpe 14 17 17 dB IC-8mA Vce-IOV
f-200MHz
Noise Figure NF 4 4 dB IC-lmA VCE-6V
RG-400J'. f-60MHz
Hfe vs IC
Cob & Cre vs V« 1
4 100
lE-0 Ji'lL^:
f-lMHz
2N/PN5132 80 ^Htll
1
3
j||
2N/PN3563, 5130
II
Hps 6o
(PFO 'jtfM^r' In
|
Cob l'i
40
|
• Cob jjlllil
1 Ijllll! 111111
20 2N/PN35&3'" '"
1
Cre 1 huh
?, 2N/PN5132._
3. 2N/PN5130 Pulse Test
c) i § 12 16 0.1
VCB (V) *C (mA)
fT VBE & VcE(sat) V!» *C

1000
VCE -10V
Hill
80C IP ' HI
"
v&/~
lis v?,'
f T 600
(MHz) *f*ty
400 I'll
<Vj*
200
M
mi
1 10 100 1 10 IOC
JC (mA) lC (mA)
2.78. 3100B. 3100B. 3300A

2N3565 2N5138 PN3565 PN5138
CASE TO-106 CASE TO-92A

THE 2H3565 (NPN) AND 2N5138 (PUP) ARE
SILICON PLANAR EPITAXIAL TRANSISTORS
TOR USE IN AP HIGH GAIN SMALL SIGNAL
AMPLIFIER AND DIRECT COUPLED CIRCUITS.
THEY ARE SUPPLIED IN CASK TO-106 AND
ARE ELECTRICALLY EQUIVALENT TO THE
TO-92 TYPE PN3565, PN5U8. CBE
EBC
(NPN) (PNP) (NPN) (PNP)

ABSOLUTE MAXIMUM RATINGS *w» 2NJ565 2N5138 W3565 PN5138
Collector-Base Voltage VcBO 30V 30V 30V 30V
Collector-Emitter Voltage Vceo 25V 30V 25V 30V
Emitter-Base Voltage Vebq 6V 5V 6V 5V
Collector Current Ij 50mA 50mA 50mA 50mA

T C<65°C) Ptot 3O0mW 300mW 750mW 750mV
(Ta<25°C) 20OmW 200mW 300mW 300mW
Operating Junction & Storage Temperature Tj, T s tg -55 to 125°C -55 to 150°C
ELECTRICAL CHARACTERISTICS T A-2= °C unless otherwis e noted)

(
2N/PN3565 2N/PN5138
KIN MAX MIN MAX
Collector-Base Breakdown Voltage BVcBO 30 30 V IC-O.lmA Ie-O
Collector-Emitter Breakdown LVCEO 25 V I C -2mA (Pulsed)
Voltage lB-0
30 V IC-lOmA (Pulsed)
lB-0
Emitter-Base Breakdown Voltage BVEBO 6 5 V lE-0.01mA Ic-0
Collector Cutoff Current ICBO 50 nA VCB-25V Ie-O
50 nA VCB-20V lE-0
3 1* VCB-20V Ie-O
Ta-65°C
Collector-Emitter Saturation vCE(sat) 0.35 V iC-lmA lB"0.1mA
Voltage 0.3 V IC-lOmA lB-0.5mA
1
Base-Emitter Saturation Voltage vBE(sat) 1 V lC«10mA IB-0.5mA

D.C. Current Gain HfE 1
70 50 800 IC-O.lmA VCE-10V
|l50 600 50 IC-lmA VCE-10V
2N3565 2N5138 PN3565 PN5138
PARAMETER SYMBOL 2N/PN3565 2N/PN5U8

MIN MAX MIN MAX UNIT TEST CONDITIONS
D.C. Currant Gain HpE 50 IC*10*A VCE-10V

Current Gain-Bandwidth Product fT 40 240
•
IC-laA VCE-5V
50 IC-0.5«A VCE-5V
Small Signal Current Gain hfe 120 750 40 1000 IC-lmA VCE-lOV
f-lKHz
Collector-Base Capacitance Cob 4 PP
7 VCB-5V Ig-0
f-lMHs
Emitter-Base Capacitance Cib 30 PP Veb-0.5V Ic-0
f-lMHa
TYPICAL CHARACTERISTICS (Ta-25°C unless otherwise noted)
CURRENT GAIN
D.C. V BE ANDVceU,0
VI COLLECTOR CURREN1 vs COLLECTOR CURRENT
Hfe VCE-lOV 1 1
Mm, 1 I ! III 1 1 1 1 NT
II II !lll
(V) 2N/PN3565 pulse test
1
___ • 2N/PN 5138
1 1
bUU 1.2 1
"1;
j
|
1 1 1!
#3
( Vf»!
\\1* j
400 "CE-5V; i*f-
'$&/]PN51V? ^N !
1
JUb
**>
111
U.4
1
1
:<sat)
||
@l C=10I B .
I
aoi 0.1 10 100 0.1 10 100

'c(mA) C(mA)
COLLECTOR CUTOFF CURRENT CURRENT GAIN - BANDWIDTH PRODUCT

VS AMBIENT TEMPERATURE vs COLLECTOR CURRENT
200
100 h
'CBO
(nA) 'CE- »
10
^Cl i-?V T=
lE-0 200
100 ,
ys "ft \M
*'
'
ai
1 10
80 120
TA (°C)
c <mA>
2.78.43O0B.0430B
2N3691 2N3692 2N3693 2N3694
FOR SMALL SIGNAL PROCESSING APPLICATIONS
THE 2N3691 THROUGH 2N3694 ARE NPN SILICON CASE TO-106

PLANAR EPITAXIAL TRANSISTORS -"OR USE IN
SMALL SIGNAL PROCESSING CIRCUITS AT D.C.
TO FREQUENCIES BEYOND 27MHz. THE 2N3693
IS SPECIALLY RECOMMENDED TOR VIDEO AMPLI-
FIER, FM-IF STAGE AND AM-CONVERTER STAGE
UP TO THE SHORT WAVE BAND.
2N3691 2N3693
ABSOLUTE MAXIMUM RATINGS 2N3692 2N3694
Total Power Dissipation (Tc<65°C) Ptot 300mW
(Ta C25°C) 200mW
Operating Junction & Storage Temperature Tj. T 8t g -55 to 125°C
TA-25°C unless otherwise noted;
Collector-Base Breakdown Voltage BVcBO IC-O.lmA Ie-0

2N3691.2 35 V
2N3693.4 45 V
Collector-Emitter Breakdown Voltage LVCEO IC-lOmA(Pulsed)
2N3691.2 25 V IB-O
2N3693.4 45 V
Emitter-Base Breakdown Voltage BVEBO 4 V lE-0.01mA Ic-0
2N5691.2 50 nA VC B-30V Ie-0
2N3693.4 50 nA VcB"55V Ie-0
2N3691.2 5 uA VCB-30V iE-iO
TA-65°C
2N3693.4 5 uA VCB-35V IE-0
TA-65°C
Collector-Emitter Saturation Voltage VcE(sat) 0.08 0.7 V IC-10mA iB-lmA
— 1
2N3691 2N3692 2N3693 2N3694

Base-Emitter Saturation Voltage vBE(sat) 0.74 0.9 V IC-lOmA IB-lmA
D.C. Current Gain HPE
2NJ691 40 80 160 IC-lOmA Vce-IV
2N3692 100 150 400 IC-10mA VCE-IV
2N3693 40 85 160 IC-lOmA VCE-IOV
2N3694 100 150 400 IC-10mA VqE-IOV
Current Sain-Bandwidth Product fT
2N3691.2 200 260 MHz IC-10mA VCE-15V
2N3693.4 200 400 MHz IC=10mA VCE-15V
Collector-Base Capacitance Cob VCB-10V I E -0
2N3691.2 2.7 6 PF f-lMHz
2N3693.4 1.8 3.5 pF
Feedback Time Constant Ccrbb' I c -lmA VC E-5V
2N3691.2 65 PS f -31.8MHz
2N3693.4 23 PS
2N3693.4 only Ccrbb' 55 PS IC-10mA VCE-15V
f«80MHz
Available Power Gain 2N3693,4 only Gpe 32 dB I C -7mA Vce-IOV
f -10.7MHz
Noise Figure 2N3693.4 only NP 4 dB IC-3mA VCE-IOV
f«lMHz R(j-300,n.
HPE (NORMALIZED ) vs IC *T vs ic
2.0 500
Pulse Test VCE-15V
iiiiii
|
r
Hm ll
1
I 1 «6
M
•<
§ 1.2
ffl
||||
liii
400
fT 300
tjt
TfTT
$%
V. /h ii
^
g gji
J"S 122
!
lll> 1
(MHz) —
0.8 •&> A r
TTT|
|
**&
m Ml
llli
/& 't
!
t^r
0.4 II w In III! 100 ! i
III 1
l|i ll
IIIIII ill :
illii Ii'll II
1 10 100 1 10
IC (mA) IC (mA)
2.78.430OA.33OOA
2N3691 2N3692 2 N 3693 2N3694
VBE(sat) & VcE(sat) vs ic Cob vs VcB
1.2 1 2N3691,2,3,4
ic»i OIb
Cob
(V) 0.8
VgEiafrLi ?
(I*)
-&3pi.d
0.4
V CZJBB&i
100 4 6 8 10
Ic (mA) VCB (V)
TRANSISTORS EQUIVALENT TO 2N3691 t 2,3.4 FAMILY

CASE TO-92B
THE FOLLOWING NPN TRANSISTORS ARE SUPPLIED IN CASE T0-92B.
THEIR ELECTRICAL CHARACTERISTICS ARE CLOSELY EQUIVALENT TO
THE 2N3691,2,'3.4 FAMILY. 9
ECB
SPECIFICATIONS AT TA=25°C
fT © IC/VCE Cob © VCB-10V
TYPE LVCEO RFE © IcAcE
Note
(NPN) (V) («A)(V) (MHz)(mA)(V) (pF) f-lMHz
mln min-max min-max max
For Suffix "A" only
rH
2N3843.A 20-40 e 2/4.5 60-230 © 2/10
NF<8.5dB ©
O*
MD 2N3844.A 30 35-70 © 2/4.5 90-250 © 2/10 4 IC-lmA VCE-12V
& RG-20A f-2MHs
CM 2N3845tA 60-120 © 2/4.5 120-290 © 2/10
»
2*3854 18 35-70 © 2/4.5 100-350 © 5/10

2N3855 18 60-120 © 2/4.5 130-450 © 5/10 Ccrbb'<90pS
•f
2N3856 18 100-200 © 2/4.5 140-500 © 5/10 © Ic«5mA

3.5
tO 2N3854A 30 35-70 © 2/4.5 100-350 © 5/10 VcE-lOV
ff
2N3855A 30 60-120 © 2/4.5 130-450 © 5/10 f-31.8MHz
2N3856A 30 100-200 © 2/4.5 140-500 © 5/10
2N3858 60-120 © 2/4.5 90-250 © 2/10 Corbb'<150pS

CM © IC-2mA
vo 2N3859 30 100-200 © 2/4.5 90-250 © 2/10 4
VCE-10V
(a
CM 2N3860 150-300 © 2/4.5 90-250 © 2/10 f-2MHz
2N5232.A 50 250-500 © 2/5 4 For 2N5232A only

NF<5dB *
2.78.4300A.3300A.4300A/B * NF © Ic-O.lmA VCE-5V
HQ-5KA f-30Hz-15Knz
PNP NPN SILICON GENERAL PURPOSE AF TRANSISTORS
CASE TO-92B CASE TO-92A

THE ABOVE TYPES ARE SILICON PLANAR EPITAXIAL
TRANSISTORS TOR GENERAL PURPOSE- AF MEDIUM POWER
APPLICATIONS. THE 2N3702 SERIES ARE SUPPLIED IN
CASE T0-92B. THE MPS3702 SERIES ARE SUPPLIED IN
CASE T0-92A.
ECB

(PNP)
2N/MPS37Q2
W
2N/MP33703
2TT
BPN)
5754
2N/MP337Q5
("»>
2N/MPS37Q6
Collector-Emitter Voltage VcBO 25V 30V 30V 20V
Emltter-Baee Voltage ebo 5V 5V 5V 5V
Collector Current IC 0.2A 0.2A 0.8A 0.8A
Collector Peak'Current ICM 0.6A 0.6A
Total Power Dissipation (Tc<25°C) Ptot 1W
(Ta$25<H3) 360mW
Operating Junction & Storage Tj, T B 1:s -55 to 150OC
Temperature
Collector-Base Breakdown Voltage BVCBO IC-O.lmA Ig-0
t
Collector-Emitter Breakdown Voltage LVcbo * Note 1 IC-10mA In-O
Emitter-Base Breakdown Voltage BVebO I lE-0.1mA IC-O
Collector Cutoff Current ICBO 100 VCB-20V lE-0
Emitter Cutoff Current IEBO 100 VfeB"3V IC-O
Collector-Emitter Saturation Voltage CE(sat)
,2N/MPS3702,3 0.1 0.25 IC-50mA IB-5»A
2N/MPS3704 0.12 0.6 IC-lOOmA lB-5mA
2N/MPS3705 0.15 0.8 IC-10CmA lB-5mA
2N/MPS3706 0.15 1 IC-100mA lB-5mA
Base-Emitter Voltage
2n/mPS3702,3 0.6 0.78 1 IC-5CmA VcE-5V
2N/MPS3704.5.6 0.5 0.83 1 IC-100mA VCE-2V
D.C. Current Gain HPE •
2N/MPS3702 60 300 IC-50BA VCB-5V
2N/MPS3703 30 150 IC-50«A YCE-5V
2N/MPS3704 100 300 IC-50mA VCE-2V
PARAMETER SYMBOL MI5 TYP MAX UNIT TEST CONDITIONS

D.C. Current Gain 2N/MPS3705 HPE » 50 150 IC-50BA VCE-2V
2H/MPS3706 30 600 IC-50mA VCE-2V
2N/MPS3702,3 100 MHz IC-50mA VCE-5V
2H/MPS3704»5.6 100 MHz IC-50mA VCE-2V
Collector-'tase Capacitanoe Cob
2H/MPS3702.3 5 12 PP VCB-10V IE-0
2n/MPS5704,5.6 4 12 pP f-lMHz
Note 1 t equal to the values of absolute maximum ratings.
» Poise Test 1 Pulse Width-0.3mS, Duty Cycle-1#
p tot vs TA HPE (NORMALIZED) vt ic

2.0
1 VCE-51< Hill
mil
T Pulse Test
300
N
M iiiii
200 -j- ::fflC = -

(mW)
I 0.8 ^* -"1558 1 fc»»-
n!
III s
1 > sl
0.4
\\\i
n it.. lllll
50 100 150 200 10 100 1000

TA (°C) Ic (mA)
VBE & r T vs ic
^(aat)' vs Ic
2. Or 250
Pulse 1'est VCE-5V
HI II
1.6 HI j 200 *'

m t /• '
^
1.2 Ujt J fT 150 } X
n
/y 1
t
VOLT <
(MHz)
1 in m r*ffi H **'
0.8
iSttr-rTT
0.4 ' 111 50
VcECaat) |
"© I JIB.
ftax 111
10 100 1000 10 100 1000

IC (mA) IC (mA)
2.78.0650B.6500B
TRANSISTORS EQUIVALENT TO 2N/MFS3702 FAMILY
THE FOLLOWING TRANSISTORS, WHICH ARE T0-92B T0-92A WITH X-67 HEAT SINK
CLOSELY EQUIVALENT TO THE 2N/MPS3702
FAMILY, ARE ALSO AVAILABLE. 0=
EB
S°
anBCIFICATKJNS AT *A- ouc f9t »** 4M0*. MU* M M ymmm%mnam.
HpE © Ic/VCE
!
CASE LVCEO BVEBO ICBO © VCB irCE(sat) © IC/IB fT © Ic

TYPE POLARITY
(Ptot) (V) (v) 0*> () (mA) (V) (V) (mA)(mA) (MHz)(mA)
mln jnin max min-max max min
2N3402 25 5 0.1 © 25 75-225 ©2/4.5 0.3 © 50/3

T0-92B
2N3403 25 5 0.1 © 25 180-540 © 2/4.5 0.3 © 50/3
with X-67
NPN
2N3404 Heat Sink 50 5 0.1 © 50 75-225 © 2/4.5 0.3 © 50/3
(560mW)
2N3405 50 5 0.1 © 50 180-540 © 2/4.5 0.3 ©. 50/3
2N4425 40 5 •0.03© 40 180-540 © 2/4.5 0.3 © 50/3
2N3414 25 5 0.1 © 25 75-225 ©2/4.5 0.3 © 50/3

2N3415 T0-92B 25 5 0.1 © 25 180-540 © 2/4,5 0.3© 50/3
NPN
PN3416 (360mW) 50 5 0.1 © 50 75-225 © 2/4.5 0.3 © 50/3
2N3417 50 5 0.1 © 50 180-540 © 2/4.5 0.3 © 50/3
2N4424 40 5 •0.03© 40 180-540 © 2/4.5 0.3 © 50/3
© 10 25- © 10/10
100 © 20
2N5220 NPN 15 3 0.1
30-600 © 0.5 © 150/15
50/10
25- © 10/10
2N5221 PNP 15 3 0.1 © 10
30-600 © 50/10 0.5 © 150/15 100 © 20
T0-92A
(350mW)
25- © 10/10 © 100/10 © 20
2N5225 NPN 25 4 0.3 © 15 30-600 © 50/10
0.8 50
25- © 10/10 0.8 © lOO/lO ©

2N5226 PNP 25 4 0.3 © 15 50 20
30-600 © 50/10
40-120 © 50/1
2N5354 PNP 25 4 •0.1 © 25 20- © 300/5
TO-92B 100-300 © 50/1 0.25 © 50/2.5
2N5355 PNP (360mW) 25 4 •0.1 © 25
40- © 300/5 1.0 © 300/30
250-500 © 50/1
2N5356 PNP 25 4 •0.1 © 25
75- © 300/5
40-120 © 50/1
2N5365 PNP 40 4 •0.1 • 40 20- © 300/5
TO-92B 0.25 © 50/2.5
2N5366 PNP (360mW) 40 ,41 •0.1 e 40 IOO-300 « 50/I
.
40- • 300/5 1.0 © 300/30
250-500 © 50/1
2N5567 PJJP 40 4 •0.1 © 40 75- © 300/5 J
* ices
2.78.6500B.0650B
TRANSISTORS EQUIVALENT TO 2N/MFS3702 FAMILY
CASE LVCEO BVfiBO ices e vce hpe © ic/vce VCE(sat) © I(j/lB fT • IC

TYPE POLARITY
(?tot) (V) (v) 0*a) <) («A)(V) (V) (mA)(*A) (MHz)(mA)
win min max min-max max min
40-120 © 50/1
2N5418 NPN 25 4 0.1 © 25 20- e 300/5
T0-92B 0.25 © 50/2.5
100-300 e 50/1
2N5419 NPN 25 4 0.1 © 25
(400mW) 40- © 300/5 1.0 © 300/50
250-500 © 50/1
2N5420 NPN 25 4 o.i © 25
75- © 300/5
2N5447 PNP
2N5448 PNP
These are T0-92P transistors. Their electrical
2N5449 NPN characteristics are exactly identical to
2N3702, 5, 4, 5, 6 respectively.
2N5450 NPN
2N5451 NPN
2.78.6500B.0650B
NPN PNP SILICON AF SMALL SIGNAL TRANSISTORS
THE 2NJ707 THROUGH 2N3711 (NPN) AND 2N4058 CASE TO-92B

THROUGH 2N4062 (PNP) ARK COMPLEMENTARY SILICON
SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED
CIRCUITS.
(NPN) (PNP)
ABSOLUTE MAXIMUM RATINGS '«"*—.«.. 2N3707 thru' 2N3711 2N4058 thru' 2N4Q62
Emitter-Base Voltage vEB0 6V 6V
Collector Current IC 200mA 100mA *•
Total Power Dissipation (Ta^25°C) p tot 360mW
derate 2.88mV/°C above 25°C
Operating Junction & Storage Temperature Tj, Tstg -55 to 150°c
** 30mA in JEDSC registration.

NPN PNP
MIN MAX MIN MAX
Collector-Base Breakdown Voltage BVcbo 30 30 V IC-0.01mA IE-O
Collector-Emitter Breakdown Voltage LVcEO 30 30 V IC-lmA iB-O(Pulsed)
Collector Cutoff Current ICBO 100 100 nA VCB-20V Ib-0
Emitter Cutoff Current lEBO 100 100 nA VEB-6V IC-O
Collector-Emitter Saturation vCE(sat) 1 0.7 V IC«10mA
Voltage lB-0.5mA
Base-Emitter Voltage VBE 0.5 1 0.5 1 V IC-lmA VCE-5V
Noise Figure * NF
5 dB IC-O.lmA VCE-5V
RG-5Kfl. f-30Hz-15KHz
5 dB IC-O.lmA VCE-5V
RG-lOKft. f-30Hz-15KHz
For 2N3707 and 2N4058 only.

1

D.C. AND SMALL SIGNAL CURRENT GAIN (HfE, hfe) AT VCE-5V T A -25<>c
— NPN 2N3707
2N4058
2N3708
2N4059
2N3709
2N4060
2N3710
2N4061
2N3711
2N4062
PARAMETER ^"\^ MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX
Hj>e at Iq~0.1ibA 100 400
H>e at I(j-lmA 45 660 45 165 90 350 180 660
hf e at Ic-O.lmA 100 550
f-lKHz
h fe at Ic»lmA
45 800 45 250 90 450 180 800
f-lKHz
Ptot ITS ta hfe (normalized) vs ic

bUO 2.0
1 VCE-5T
puls s Ttea t
^1-6
tsi
Ptot 3l.2 'III
J"
(mV) §0.8
nil
?no ii it
&0.6
III
llli
50 loo 150 0.1 10

Ta (»c) IC (mA)
VBE & VCE(aat) va IC *"t vs ic

2.0 250
mi
II >ulse 1 '68
—I I
1.6 200 J^-J
/' 1
XI
1.2
• fT
150 /
/ J -I
VOLT (MHz) J -41
0.8 VbeI 100 w 1 -4t
e Vce-51.
<fl 4 -4S
0.4 Illll 50 J -4ffi
VCE (sat)
1 -41
e ] [c- 201 II
VCE-5V
Pit
0.1 1 10 0.1 1 10 100
IC (mA) *C (mA)
2.78.4300B.0430B
2N3823
N-CHANNEL JUNCTION FIELD EFFECT TRANSISTORS
CASE TO-72
THE 2N382J IS AN N-CHANNEL JPET DESIGNED
FOR RF AMPLIFIER AND MIXER APPLICATIONS.
IT FEATURES LOW CROSS-MODULATION, LOW
NOISE FIGURE AND GOOD POWER GAIN AT FRE-
QUENCY UP TO 450MHz. THE DEVICE IS ALSO
SUITABLE FOR ANALOG SWITCHING WHERE LOW
JUNCTION CAPACITANCE IS ESSENTIAL. CASE
THE S,D,G TERMINALS ARE

ELECTRICALLY ISOLATED
FROM CASE.
Drain-Gate Voltage VDG 30V
Drain-Source Voltage vds 30V
Gate-Source Voltage VGS -30V
Gate Current IG 10mA
Total Power Dissipation (Ta425°C) *tot 300mW
derate 2mW/oC above 25°C
Operating Junction & Storage Temperature Tj. rstg -65 to 175°C
ELECTRICAL CHARACTERISTICS (Ta«25°C unless otherwise noted) * Common Source

Gate-Source Breakdown Voltage -BVgss 50 V -lG-luA Vds-0
Gate Cutoff Current -IGSS 0.5 nA -VQS-20V Vds-0

0.5 PA -VGS-20V Vds-0
TA-150OC
Zero-Gate-Voltage Drain Current IDSS 4 10 20 mA VDS-15V VGS-0
Gate Source Voltage -VGS 1 3.2 7.5 V VDS-15V ID-0.4mA
Gate Source Cutoff Voltage -VGS(off ) 3.5 8 V VDS-15V lD-0.5nA
Forward Transfer Admittance lyfsi 3.5 5 6.5 mrr VDS-15V Vqs-0

f-lkHz
Output Admittance |y si
• 20 35 f
v VDS-15V VsS-0
f-lkHz
Input Capacitance Ciss • 3.5 6 PP VDS-15V Vgs-0

f-lMHz
Feedback Capacitance Crss » 0.7 2 PF VDS-15V VGS-0 f-lMHz

2N3823
PARAMETER SYMBOL MIN fYP MAX UNIT TEST CONDITIONS

Forward Transfer Admittance |yfs|» 5-2 5.5 mtr Vds-15V VGS-0
f -200MHz
Input Conductance Sis * 250 800

rv VDS-15V VGS-0
f -200MHz
Output Conductance «OS * 60 200 ut; VDS-15V Vos-0

f-200MHz
Spot Noise Figure NP • 1 2.5 dB TDS-15V Vgs-0

f-lOOMHz Rc-IKA
Power Gain Gps • 12 dB Vds-15V IU-5mA

f-400MHz
Equivalent Noise Input Voltage En * 8 nV/V5z VDS-15V iD-lmA

f-lOOHz
"On" Resistance r ds(on) 170 n. Vus-lOOmV VGS"°
TYPICAL COMMON SOURCE y-RARAMETER AT VDS-15V VGS-0 Ta=25°C
300r 10 10 1000 10
(mv)
II 111 III
^s Crs 8
80s b os
(mV) (PF) (aw)
6
1
gfs i
=Ci a U 100
—
4 111
—
--Q B5flJi
1
"O%l\
Mw
-JIPL-
2
—
—f
0.1 0.1 111
0.1
10 100 100 1000 10 100
f (MHz) f (MHz) f (MHz)
I vs ?DS
)
|yfs| vs Id
12 n
1 1
TA-2 5°C r
10 ds-o |l|l|l_TA-25ofl
Id »
-0.57 fi -1PK2
(mA) 6 -IV i^fsi tftr
-1.5V 4 11
4
-2V
(mtr)
'
"1
2
-2.5V- ? •
'
1
*>' 1
4 8 12 16 Hill
0.1
^DS (V) XD (mA)
3.78.S520/2.5
2N3823 & similar types
2N3823 AUD SIMILAR TYPES SPECIFICATIONS AT TA-25OC

•Tds- 15V • VBS-15V VGS-0
BVOSS«-lG -GS(off ) • id isss f-lkHs • f-lMHz
TTPB CASE Posl Cias Cras
(V) (JU;
(V) (nA) (A) (mO) (PF) (py)
min min-max mln-max ain-aax max max max
BF244A 2-6.5
BF244B TO-92DA 30 1 0.5-8 10 6-15 3-6.5
BP244C 12-25
BF245A 2-6.5
BK45B TO-92DE 30 1 O.5-8 10 6-15 3-6.5
BF245C 12-25
BP256A 3-7
BF256B TO-92DE 30 1 0.5-7.5 200J1A 6-13 4.5-
BP256C 11-18
2H3819 TO-92DA 25 1 -8 2 2-20 2-6.5 50 8 4
2*3823 TO-72 30 1 -8 0.5 4-20 3-5-6.5 35 6 2
2N4302« -4 10 0.5-5 1-
2N4303* TO-106 30 1 -6 10 4-10 2- 50 6 3
2H4304* -10 10 0.5-15 1-
2K4416 TO-72 30 1 -6 1 5-15 4.5-7.5 50 4 0.6
2N5103 25 10 1-8 2-8

TO-72 0.5-4 1 100 5 1
2H5104 25 i 2-6 3.5-7.5
2N5163 TO-106 25 1 O.4-8 IpA 1-40 2-9 200 12 3
2H5245 1-6 10 5-15 4.5-7.5 50

2K5246 TO-92DE 30 1 O.5-4 10 1.5-7 3-6 50 4.5 1
2N5247 1.5-8 10 8-24 4.5-8 70
2H5248 T0-92DA 30 1 1-8 10 4-20 3.5-6.5 50 6 2
2N5457 0.5-6 10 1-5 1-5

2H5458 TO-92DD 25 10 1-7 10 2-9 1.5-5.5 50 7 3
2N5459 2-8 10 4-16 2-6
2N54&4 0.3-3 10 1-5 3-6 50

2H5485 TO-92DD 25 1 0.5-4 10 4-10 3.5-7 60 5 1
2H5486 2-6 10 8-20 4-8 75
2H5556 0.2-4 1 0.5-2.5

2H5557 TO-72 30 10 0.8-5 1 2-5 1.5-6.5 20 6 3
2N5558 1.5-6 1 4-10
2W5668 0.2-4 10 1-5 1.5-6.5 20

2H5669 TO-92DD 25 10 1-6 10 4-10 2-6.5 50 7 3
2*5670 2-8 10 8-20 3-7.5 75
* VGS(off), IDSS, yfsl f Yoal » Cisa and Cras are tested @ VDS -20V
2N3823 & similar types
JFET LEAD CODE
T0-92DA T0-92DD TO-92BE
Q Lead
preformed
to TO-106
s pacings
1
SGD DSG CDS
TO-72 TO-106
' • CASS
&
The terminal* S, D, G are
eleotrioally isolated from
case.
3.78.8320/2.5
2N3825 2N3827
THE 2N3825, 2N3827 ARE NPN SILICON PLANAR CASE TO-92B

EPITAXIAL TRANSISTORS FOR RF AND IP SMALL
SIGNAL AMPLIFIER APPLICATIONS.
2N3825 f T - 550MHz typ. 6 Ic-2mA
2N3827 fT - 350MHz typ. Ic-2mA

Total Power Dissipation ( T»<.25°C) Ptot 250mW
ELECTRICAL CHARACTERISTICS (TA-250C)

2N3825 2N3827
MEN MAX MIN MAX
Collector-Base Breakdown Voltage BVCBO 30 60 V IC-O.OlmA IE-O
Collector-Emitter Breakdown Voltage LVCEO 15 45 V IC-liaA (Pulsed)

IB-O
Emitter-Base Breakdown Voltage BVeBO 4 4 V lE-0»01mA Ic-0

100 nA VCB-30V IE=0
Collector-Emitter Saturation Voltage VCE(eat) 0.25 V lC-2mA !B-0.2mA
D.C. Current Gain HFE 20 IC-2mA VCE=10V

100 400 IC-10mA VCE-10V
Current Gain-Bandwidth Product fT 200 800 MHz IC-2mA Vce=10V

200 800 MHz IC-10mA Vce-IOV
Collector-Base Capacitance Cob 3-5 3.5 P? VCB-10V IE-O

f-lMHz
Noise Figure NF 5.5 dB IC-lmA VCE-5V

BG-500fl f-lMHz
2N3825 2N3827
TYPICAL CHARACTERISTICS AT TA-25<>C
Hje va Ic YBE & VCEfaat) va !c

200
1
ulse Test.
]
"Vc i- 1UY
1
150
BPE ^ tiff
J
100
n
hs 3825
50
Jl
HII
1 10 100 100
IC (mA) IC (mA)
fT ic
800 Cob va 'CB
vc E-10V 5
IE-O
III
-±i» mz
4-
600 fv
(MHz)400
r \ <" 1 (P*0 3
^
V> ~
«-. ?1» 38i 7
#1 2
'
"»*
'UhJT 1
rsa
2S3*2<i
1
0.1 1 10
II
100
24 VCB
6 8 10
(V)
IC (mA)
3.78.3100B.3300A
CASE T0-39
THE 2H4030 THROUGH 2N4033 ARE PNP SILICON PLANAR
EPITAXIAL TRANSISTORS TOR AF MEDIUM POWER DRIVERS
AND OUTPUTS, AS WELL AS TOR SWITCHING APPLICA-
TIONS UP TO 1 AMPERE. THE 2N40J0, 2N4031, 2N4032,
2N4033 ARE COMPLEMENTARY TO THE NPN 2N3108, 2N3020,
2N3107, 2N3019 RESPECTIVELY.
1
2N4050 2N4031
Collector-Base Voltage -VCBO 60V 80V

Collector-Emitter Voltage -VCEO 60V eov
Emitter-BaBe Voltage -VEBO 5V 5v
Total Power Dissipation (Tc<25°C) Ptot 4W
(Ta<25°C) 800mW
ELECTRICAL CHARACTERISTICS (Ta-25<>C unless otherwise noted)

PARAMETER SYMBOL MTN MAX UNIT TEST CONDITIONS
Collector-Base Breakdown Voltage -BVCBO -IC=0.01mA IE-O
2N4030, 2N4032 60 V
2N4031, 2N4033 80 V
Collector-Emitter Breakdown Voltage -LVCEO * -IC-10mA lB-0
2N4030, 2N4032 60 V
2N4031, 2N4033 60 V
Emitter-Base Breakdown Voltage -BVEBO 5 V -lE-0.01mA lc-0
Colleotor Cutoff Current -ICBO
2N4030, 2N4032 50 nA -VCB-50V IE-O
2N4031, 2N4033 50 nA -VCB-60V Ie-O
Collector Cutoff Current -ICBO
2N4030, 2N4032 50 uA -VCB-50V IjyO TA-150OC
2N4031, 2N4033 50 uA -VCB-60V i E -0 Ta-150°C
Collector-Emitter Saturation Voltage -CE(sat)< 0.15 V -IC=150mA -lB-15mA
0.5 V -IC-500mA -IB-50fflA
2N4030, 2N4032 only -VCE(sat)< 1.0 V -IC-1A -IB-0.1A
Base-Emitter Saturation Voltage -VBE(sat)< 0.9 V -IC-150mA -lB-15mA
Base-Emitter Voltage -Vbe » 1.1 V -IC-500mA -VCE-0.5V
2N4030, 2N4032 only 1.2 V -IC-lA -VCE-1V

D.C. Current Gain
2W4030, 2H4031 only H?E * 30 -IC-O.lmA -VCE-5V
40 120 -IC-10OmA -7CE-5V
25 -IC-500mA -VCE-5V
D.C. Current Gain
2N4032, 2U4033 only HPE * 75 -IC-O.lmA -VCE-5V
100 300 -IC-100mA -YCE-5V
70 -IC-500mA -VCE-5V
D.C. Current Gain 2W4050 HFE * 15 -IC-1A -VCE-5V
2H4031 10
2H4032 40
2N4033 25
D.C. Current Gain 2N4030, 2N4031 KpE » 15 -IC-100mA -VCE-5V Ta— 55©c
2N4032, 2W4033 40
Current Gain-Bandwidth Product fT -IC-50mA -VCE-10V
2N4030, 2W4031 100 400 MHz
2TT4032, 2N4033 150 500 MHz
Collector-Base Capacitance Cob 20 PF -Vcb-IOV Ie-0 f-lMHz
Emitter-Base Capacitance Cil> 110 pP -VEB-0.5V Ic-O f-lMHz
Turn-On Time ton 100 nS -IC-500mA -lBl-50mA
Storage Time ts 350 nS -IC-500raA -lBl-lB2-50mA
Fall Time tf 50 nS -IC-500mA -lBl-l32-50mA
• Pulse Test j Pulse Width-0.3mS, 3>ity Cycle -l«f
• OSCILLOSCOPE
Z|N > 100 ktt
V"10iw
pulse source
t„ tf < 20 na
z IN *son
PW- 10(11
DC<2K
Ptot ta HPE (NORMALIZED) vs Ic

2.0
Hill
T A -25°C
TPulse Test
N nun
t
ptot
>fc i im2
J
III
mill
1
\ ""^s
(w) 5. 0.8 I llllll
t 1
'nJ
t
i>. L?i ^0.4 IPh
j 1
I IIIIIJ
50 100 150 200 10 100 1000

TA (°C) "IC (mA)
1.78.O8IOB
2N4234 2N4235 2N4237 2N4238
COMPLEMENTARY
THE 2N4234, 2N4235 (PNP) AND 2N4237. CASE TO-39

2N4238 (NPN) ARE COMPLEMENTARY SILICON
PLANAR EPITAXIAL TRANSISTORS FOR USE
IN AF MEDIUM POWER DRIVERS AND OUTPUTS,
AS WELL AS FOR SWITCHING APPLICATIONS
ABOVE 1 AMPERE. THEY FEATURE LOW
COLLECTOR -EMITTER S^TURAÎON VOLTAGE C B
E
(0.6V MAX @ Ic=lA).
(PNP) (PNP) (NPN) (NPN)

f«p^p *-*«.-*«•— ~»« -*--.««-»». 2N4258
absolute maximum ratings 2N4234 2N4235 2N4237
Collector-Base Voltage ^CBO 40V 60V 50V 80V
Collector-Emitter Voltage vCE0 40V 60V 40V 60V
Emitter-Base Voltage 7V 7V 6V 6V
ÊBO
Collector Current Iq 3A 3A 3A*» 3A*<
Total Power Dissipation (T C ^25°C) P-tot -6W, derate 34m'.//°C above ?5°C->
(T A ^25°C) -1W, derate 5.7mW/°C above 25°C*
1A in JEDEC Registration
T -25°C unless otherwise noted)

ELECTRICAL CHARACTERISTICS ( A
Collector-Emitter Breakdown Voltage LVCE0» I c =100mA I B -0

2N4234. 2N4237 40 V
2N4235, 2N4238 60 V
Collector Cutoff Current *CEV
2N4234 0.1 mA VCE-40V Veb-1.5V
2N4235 0.1- mA VCE -60V Veb-I.JV
2N4237 0.1 mA VCE -45V V EB =1.5V
2N4238 0.1 mA VCE=75V VEB =1.5V
Collector Cutoff Current ICEV
2N4234 1 mA VC E-30V VEB-1.5V
Ta-150 C
2N4235 1 mA VCE-40V VEB -1.5V
Ta-150 c
2N4237 1 mA VCE=50V Veb=1.5V
TA =150°C
2N4236 1 mA VC E=50V V^l.SV
T ASl50°C
Collector Cutoff Current I CB0 0.1 mA V CB= V CB0 H-°

.
2N4234 2N4235 2N4237 2N4238
PARAMETER SYHBOL MIN TYP MAX UNIT TEST CONDITIONS

Collector Cutoff Current J CEO
2N4254 1 mA VCE-30V I B -0
2N4255 1 mA VCE-40V I B =0
2N/.257 0.7 mA VCE-40V I B -0
2N4258 0.7 mA VCE=60V Ib=0
Emitter CutoTf Current j ebo 0.5 mA vEB"vEB0 JC"
Collector-Emitter Saturation Voltage v CE(sat)* 0.55 0.6 V I C =1A I B =125mA
2N4254, 2N4255 only
Collector-Emitter Saturation Voltage vCE(sat)*
0.18 0.5 V I c »500mA I B =50mA
2N4257i 2N4258 only
0.55 0.6 V I C -1A I B =0.1A
Base-Emitter Saturation Voltage VBE(sat)* 1.0 1.5 V I -1A I -0.1A
C B
Base-Emitter Voltage VBE* 0.78 1.0 V I -250mA VCE-1V
c
D.C. Current Gain 2N4254, 2N4255 only HpE* 40 I =100mA VCE -1V
c
50 150 I -250mA VCE-1V
c
20 I c -500mA VCE =1V
10 Ifi-1A V CE -1V
D.C. Current Gain 2N4257, 2N4258 only HPE* 50 I c »50mA VC p-lV
50 150 I c =250mA VC e-1V
50 I c -500mA VCE =1V
15 Ig-IA VCE =1V .

2N4254t 2N4255 5 70 MHz I c =100mA VCE-10V
2N4257, 2N4258 2 70 MHz I c =100mA VCE-10V
Collector-Base Capacitance Cob 100 PP vCB-i°v Ib-0
f-IOOKHz
Small Signal Current Gain h fe
2N4254, 2N4255 25 I c -50mA VCE -10V
f=lKHz
2N4257, 2N4258 50 I c =100mA VCE -10V
f-IKH* ^
* Pulse Test t Pulse Width-0.5mS, Duty Cycle«l#
SATE CPERATI5C AREA( , C -25°C)

10
—— 2.0
X '\10mS
C 1
(0 ^^
^ |
D.C^ Vt
'2N 4254,7
2N4255,8
0.01 i i Mil "I 1
1 100 10 *
V C E (V? 100
C ^1000
1.78. 0810A .8100A
2N4248 2N4249 2N4250
PNP SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS
THE 2N4248, 2N4249. 2N4250 ARE PNP SILICON CASE TO-106

PLANAR EPITAXIAL TRANSISTORS FOR AF LOW
NOISE PREAMPLIFIER APPLICATIONS. THEY ARE
SUPPLIED IN CASE TO-106. TO-92A EQUIVALENTS
©
(PN4?48, PN4249, PN4250) ARE ALSO AVAILABLE.
ABSOLUTE MAXIMUM RATINGS 2N4248 2N4250 2N4249

Collector- Base Voltage -VcBO 40V 40V 60V
Collector-Emitter Voltage -VCEO 40V 40V 60V
Emitter-Base Voltage -VEBO 5V 5V 5V
Collector Current -Iq 50mA
Total Power Dissipation (Tc<65°C) Pt t 300mW
(Ta<25oc) 200mW
Operating Junction & Storage Temperature Tj, T s tg -55 to 125°C
ELECTRICAL CHARACTERISTICS (Ta=25°C unless otherwise noted)

2N4248 2N4249 2N4250 ONIT
PARAMETER SYMBOL TEST CONDITIONS
Collector-Base Breakdown Voltage -BVCBO 40 60 40 V -IC-0.01mA lE-0
Collector-Emitter Breakdown -BVcES 40 60 40 V -IC-O.OlmA Vbe-0

Voltage
Collector-Emitter Breakdown -LVceo 40 60 40 V -IC-5mA (Pulsed)
Voltage IB-O
Emitter-Base Breakdown Voltage -BVebO 5 5 5 V -lE-0-OlmA Ic-O
Collector Cutoff Current -ICBO 10 10 10 nA -VCB-40V lE-0

3 3 3 uA -VCB-40V Ie-0
TA-65°C
Emitter Cutoff Current -IEBO 20 20 20 nA -VEB=3V Ic-O
Collector-Emitter Saturation -VcE(sat ) .25 0.25 .25 V -IC-10mA

Voltage -lB-0.5mA
Base-Emitter Saturation -VBE(sat ) 0.9 0.9 0.9 V -IC«10mA

Voltage -IB-O. 5mA
D.C. Current Gain 50 100 300 250 700 -IC-lOOuA -VCE-5V

HpE
50 100 250 -iC-lmA -VCE-5V
100 250 -iR-lOmA -VCE-5V
!
2N4248 2N4249 2N4250
2N4248 2N4249 2N4250

MIN MAX- MIN MAX MIN MAX
Small Signal Current Gain hfe 50 1000 100 550 250 800 -IC-lmA -7CE-5V
f-lkHz
Input Impedance hie 2.5 17 6 20 K£ -IC-lmA -VcE-57
f-JkHz
Output Admittance hoe 5 40 5 50 -IC-lmA -V CE-5V
f-lkHz
-4
Voltage Feedback Ratio h re 10 10 xlO -I c -lmA -VCE-5V
f-lkHz
Current Gain-Bandwidth Product f T 40 40 50 MHz -IC-0.5mA -VCE-5V
Collector-Base Capacitance Cob 6 6 6 pF -V C B-5V Ie-0
f-lMHz
Emitter-Base Capacitance Cib 16 16 16 PF -VEB-0.5V IC-0
f-lMHz
Noi3e Figure NF 3 2 dB -I C -20>iA-VCE-5V
RG-lOK-fl- f-lkHz
3 2 dB -IC-20pA -VCE-5V
RG-lOKrt f-lOHz-lOkHz
3 2 dB -IC-250uA -VCE-5V
Rq-IKA f-lkHz

Hpg vs IC
500 VcE(sat) & VBE(sat) vs IC
-VCE-5V 2.0
Hill llllll IC-26fl
III
>ulse Test mi iesx
400 SI J
1.6 i
r§i
1 1 II
Hfs 500 Kflf ill l3I II
1
Jlllll
Ml VOLT I Uj
200 ^TfflT*" Jlllll nil HH
0.8
V BE(sat)_
2N4 o^|R m |F
100 inni
n T]|| li
!
1
i
0.4 i
III if J
1
1
r
0.01 0.1
llllll
1 10 0.1
\ CE(s at;
1
M il i—
10
+-
"ill 1
r 100
"IC (mA) _I C (mA)
fT vs IC NP V8 IC
250
ITJI -VCE- 5V
ttn t II
1 1
1
f
T
(?<Hz)
150
Ms
iiii^
!
;i I
i!
Il
j!
M i
ii
''
y
i '
i li
ij
i '!
i
1 !
1
r, Nil i
i 1 lilt i I! il
1 10 100 1000
-IC (mA) "^ (pA)
1.78.0450B/0430B
2N4400 2N4401
NPN SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES
CASE T0-92A
THE 2N4400, 2N4401 ARE NPN SILICON PLANAR
EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE
AMPLIFIERS AND MEDIUM SPEED SWITCHING
APPLICATIONS. THEY ARE COMPLEMENTARY TO
THE PNP TYPE 2N4402 AND 2N4403 RESPECTIVELY.
EBC

Collector-Baae Voltage vCB0 60V

Operating Junction & Storage Temperature Tj, Tstg -55 to 150OC
«» 310mW in JEDEC registration.
TA- 250c unless otherwise noted)
2N4400 2N4401
MIN MAX MIN MAX
Collector-Base Breakdown Voltage BVcbO 60 60 V IC-O.lmA Ie-0
Collector-Emitter Breakdown LVCEO * 40 40 V IC-lmA IB-O

Voltage
Emitter-Base Breakdown Voltage bvebo 6 6 V lE-0.1mA Ic-0
Collector Cutoff Current ICEV 0.1 0.1
^ VCE-35V VEB-0.4V
Base Cutoff Current IBL 0.1 0.1 UA VCE-35V VEB-0.4V

Collector-Emitter Saturation VcE(sat)* 0.4 0.4 V IC-150mA lB-15mA
Voltage 0.75 0.75 V IC-500mA lB-50mA
Base-Emitter Saturation Voltage VBE(sat)» 0.75 0.95 0.75 0.95 V IC-150mA lB-15mA
1.2 1.2 V IC-500mA IB-50mA
D.C. Current Gain HpE * 20 I c -0.1mA VCE-IV

20 40 IC-lmA VCE-IV
40 60 IC-lOmA VCE-IV
50 150 100 300 IC-150mA VCE-IV
20 40 IC-500mA VCE-2V
Current Gain-Bandwidth Product fT 200 250 MHz IC-20mA VCE-10V j

2N4400 2N4401
PN440O 2N4401
MIN MAX MIN MAX
Collector-Base Capacitance Cob 6.5 6.5 pF VCB-5V lE-0

f=140kHa
Emitter-Base Capacitance Cib 30 30 PP VEB-0-5V Ic-0

f-140kHz
Input Impedance hie 0.5 7.5 1.0 15 Kli IC-lmA VCE-10V

f-lkHz
4
Voltage feedback Ratio h re 0.1 8.0 0.1 8.0 xlO I c -lmA Vce=10V
f-lkHz
Small Signal Current Gain hfe 20 250 40 500 I C -lmA VCE-10V

f-lkHz
Output Admittance h oe 1 50 1 30 utr IC-lnA VcE-lOV

f-lkHz
Delay Time *d 15 15 nS IC»150mA lBl-15mA

VC c-30V
Hise Time *r 20 20 nS IC=150mA Isl«15mA
Vco -J0V
Storage Time ts 225 225 nS IC-150mA iBl— Ib2*15<bA

V CC -30V
Pall Time tf 30 30 nS IC-150mA lBl~lB2-15n»A

V CC -30V
» Pulse Test i Pulse Width-0.3mS, Duty Cycle-1^
ADJUST V BB FOR -0.2 V
OFFSET AT POINT "A" Ver - *30 V
toff SWITCHING
tg,, SWITCHING
:jt. TITL'
tr < 2.0 m
PW- 1.0(11 t, < 2-0 m
OC-2* PW- 1.0*11
DC -2%
VCE(sat) & VBE(sat) vs IC H-pg vs Ic

2.0 -
"!H! IC-10IB
I'lllll
alse Test
ll'l! Hfi
1.6
lljljll IN III
1.2 IIIPI
'
llll
miii
VOLT
lip., 1
fii
0.8 v-beO mi
0.4
j
VCEJ aa^
10 100 1000 1000
IC (mA)
1.78.6500B
2N4402 2N4403
PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES
THE 254402, 2H4403 ARE PNP SILICON PLANAR CASE TO-92A

EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE
AMPLIFIERS AND MEDIUM SPEED SWITCHING
APPLICATIONS. THEY ARE COMPLEMENTARY TO
THE NPN TYPE 2N44O0 AND 2N4401 RESPECTIVELY.
EBC

Collector-Base Voltage -VcBO 40V
Collector-Emitter Voltage -VCEO 40V
Emitter-Base Voltage -VBBO 5T
Collector Current -ic 0.6a
Total Power Dissipation (*A<25 C) Ptot 500bW
Operating Junction & Storage Temperature Tj» *stg -55 to 150°C
»* 310jdW in JEDEC registration.

2N4402 2N4403
MIN MAX MIN MAX
Collector-Base Breakdown Voltage -BVcBO 40 40 V -IC-O.lmA Ie-0
Collector-Emitter Breakdown -LVCEO * 40 40 V -IC-lmA IB-O
Voltage
Emitter-Base Breakdown Voltage -BVebo 5 5 V -IS-O.lmA Ic-0
Collector Cutoff Current -ICEV 0.1 0.1 }* -CB-35V -VEB-0.4V
Base Cutoff Current -IBL 0.1 0.1 1* -VOT.35V -TKBXMV
Collector-Emitter Saturation -VCE(sat)* 0.4 0.4 V -IC-150BA -IB-15BA
Voltage 0.75 0.75 V -IC-500U -lB-50mA
Base-Emitter Saturation Voltage -VBE(sat)* 0.75 0.95 0.75 0.95 V -IC-150BA. -IB-15»A
1.3 1.3 V -IC-500mA -lB-50mA
D.C. Current Gain HFE * 30 -IC-0.1^ -VCE-1V
30 60 -IC-1»A -VCE-1V
50 100 -IC-lOmA -VCE-1V
50 150 100 300 -IC-150«A -VCE-2V
20 20 -IC-50CmA -VCE-2V
Current Gain-Bandwidth Product *T 150 200 MHi -IC-20mA -VCE-10V
2N4402 2N4403
2R4402 2H4403
PARAMETER SYMBOL UH1T TEST COHDITIOHS
mir max Mil! MAX
Collector-Base Capacitance Cob 8.5 8.5 pf -YCB-10V Ig-0
f-140kHs
Emitter-Base Capacitance Cib 30 30 PF -VEB-0.5V IC-0
f-140kHz
Input Impedance hie 0.75 7.5 1.5 15 Kft -lC-lmA -YCE*10V
f-lkHz
Voltage feedback Ratio hre 0.1 8.0 0.1 8.0 xlO4 -lC-lmA -VcE"10y
f-lkHz
Snail Signal Current Gain hfe 30 250 60 500 -IC-laA -VCE-10V
f-lkHz
Output Admittance hoe 1 100 1 100 JO- -I c -lmA -VCE-IOV
f-lkHz
Delay Time td 15 15 BS -IC-150mA -lBl-15mA
-Ycc-30V
Rise Time tr 20 20 nS -IC-150mA -lBl-15mA
-Vco-307
Storage Time t8 225 225 nS -IC-150«A -IB1-IB2-15»A
-Vcc-30V
Fall Time tf 30 30 nS -I C -150mA -IB1-IB2-15«A
-Vcc-307 1
* Pulse Teat i Pulse Width«0.5mS, Duty Cycle-1^

10 v v„.-»y
(.If SWITCHING
°~LT
-11 I I -30 VI I
t, < 2.0 in
PW> 1.0 (M
DC -2*
HFE vs xc
?so „ vCE(sat) & VBE( aat) vs Ic
„
2>0| '!
f
,«!lON 1 | ,
'!';
I I III t l"l
iM ii3s5?s
--Vc
Jill
l3\N 1.6
-VcB^JÎvNl
I
Hpj;
150 ,.
I JUT mXv\ 1
100
-V<jE-lVlf
IHri i
Tf
flrw
m
lU
50 -J 1
-- ; : 2H4402 '
ilil i
Pulse Test
111?!!
1 100 1000
"IC (mA)
2N4926 2N4927
NPN SILICON HIGH VOLTAGE AMPLIFIERS
CASE TO-59
THE 2N4926, 2N4927 ARE NPN SILICON. PLANAR TRANSISTORS
DESIGNED FOR HIGH VOLTAGE MEDIUM POWER AMPLIFIERS AND

Collector-Emitter Voltage VceO 200V 250V
Collector Current IC 100mA **
Total Power Dissipation (Tc*25°C) p tot 5W
(T A <25°C) 1W
Operating Junction & Storage Tj, Tstg -65 to 200°C

2N4926 2N4927
MIN MAX MIN MAX
Collector-Base Breakdown Voltage BVCBO 200 250 V IC-O.lmA IE-0
Collector-Emitter Breakdown Voltage LVCEO* 200 250 V IC-lOmA IB-O
Emitter- Base Breakdown Voltage BVebO 7 7 V lE-0.1mA IC-O
Collector Cutoff Current ICBO 0.1 uA VCB-IOOV IE-0
10 UA VCB-IOOV Ie-0
Ta-100°C
0.1 VCB-150V IE-0
10 VQB-150V IE-0
Ta-100«>C
Emitter Cutoff Current IEBO 0.1 uA VEB-5V IC-0
Collector-Emitter Saturation Voltage VCE(sat)* 1 1 V IO-10fflA iB-lmA
2 2 V IC-30mA lB-3mA
Base-Emitter Saturation Voltage VBE(sat)' 1.2 1.2 V IC-lOmA iB-lmA
1.5 1.5 V IC-5CWA lB-3mA
Base-Emitter Voltage VBE » 1.5 1.5 V lC-30mA VcE-lOV
D.C. Current Gain BFE * 10 10 lC-3mA VCE-10V
15 15 IC-lOmA VCE-10V
20 200 20 200 lC-30mA VCE-10V
20 20 lC-50mA VCE-20V
2N4926 2N4927
2R4926 2N4927
MIN MAX MIN MAX
Current Gain-Bandwidth Product fT 30 500 30 300 MHz IC-10mA VCE-20V
Collector-Base Capacitance Cob 6 6 pF VCB-20V IE-O
f -140kHz
Input Impedance hie 75 2000 75 2000 ohm* IC-10mA VcE-lfV

f-lkHz
-4
Voltage Feedback Ratio hre 0.1 2 0.1 2 xlO IC-10mA VCE-10V
f-lkHz
Small Signal Current Gain hfe 2S 250 25 250 IC-10mA VCE-10V

f-lkHz
Output Admittance hoe 50 50 utf IC-10mA VcE-lOV

f-lkHz
Real Part of Input Impedance
*M 4 200 4 200 ohms IC-10mA
f-5MHz
VCE-20V
Pulse Test i pulse VH.dth-0.3mS, Duty Cycle-1^
TYPICAL CHARACTERISTICS AT T A .25°C
^PS IC BE(sat) * cE(sat) rs Ic

200 10 ¥ IC-19IB
nil II
160 mil
||
11
120
1 TOW
-m
80
—
EVbe (sat)=: =
rl
~Htl
llllll
m = ;i
•
ll||| 0.3 llil
40
Pulse Test
Hill III
Hiiro
Hill
1
II
0.1
« ill Jl
mi
0.1 1 10 100 1000 0.1 10 100
Ic (M)
100
fT r» IC
CB-20V
100 = Cib 4 Cob
:J:
ys
—
yR
-: *-0
|
40KHs
60
z^\.:±
J...I
>:...
30
fcflb I
60 <P»)
fT t 1
19
(MU)40 °Oh "TrU
[111
20 "n
1 1 II
10 100 10 100
1C(«A) TH(T)
2.78.7300B
PNP NPN SILICON AF SMALL SIGNAL TRANSISTORS
THE 2N4964, 5 (PNP) AND 2N4966, 7, 8 (NPN) CASE T0-1O6

ARE SILICON PLANAR EPITAXIAL TRANSISTORS
TOR USE IN AF SMALL SIGNAL AMPLIFIERS AND
DIRECT COUPLED CIRCUITS.
a
(PNP) (NPN) (NPN)

ABSOLUTE MAXIMUM RATINGS f-wht*-..*.*. «-)««« 2N4964.5 2N4966.7 2N496S
Collector-Base Voltage VcBO 50V 50V 30V
Collector-Emitter Voltage VcEO 40V 40V 25V
Emitter-Base Voltage VEBO 5V 6V 6V
Collector Current ic 100mA 100mA** 100mA**
Total Power Dissipation TA<25°C) Ptot 200mW
(
Operating Junction & Storage Temperature Tj, T 8 tg -55 to 125«C


Collector-Base Breakdown Voltage BVcBO IC-O.01mA Ie-0
t
Collector-Emitter Breakdown Voltage LVCE0 Note 1 IC- 10mA (Pulsed)
IB-0
1
Emitter-Base Breakdown Voltage BVEBO I lE-0.01mA IC-0

2N4964.5 25 nA VCB-20V IE-0
2N4966.7 25 nA VCB-25V Ie-0
2N4968 50 nA VCB-25V Ie-0
Collector-Emitter Saturation Voltage VcE(sat) 0.08 0.4 V IC-10mA IB-0. 5mA
Base-Emitter Voltage VBE 0.68 V IC-10mA VCE-5V
D.C. Current G aj. n Hpg
2N4964 30 120 IC-lOuA VCE-5V
2N4965 80 400
2N4966.8 40 200
2N4967 100 600
D.C. Current Gain HpE
2N4964 40 IC-10mA VCE-5V
2N4965 100
2N4966.8 50
2N4967 120
Note 1 s equal to the values of absolute maximum ratings.
'
PARAMETER SYMBOL MUl TCP MAX UNIT TEST C0NDITI0HS

Current Gain-Bandwidth Product fT IC-lmA VCE-5V
2N4964.5 60 MHz
2N4966,7,8 40 MHz
Collector-Base Capacitance Cob VcB"5V lE-0
2114964,5 4 8 PP f-lMHz
2N4966.7.8 3 6 PP
Noise Figure UP 6 dB IC-10fiA VCE-5V
HG-IOKO. f-lKHz
TYPICAL CHARACTERISTICS AT TA.25°C
V BE AND vCE($at)
D.C CURRENT GAIN
Pu. .se Test
T 1
t
VBE
* V CE -5V
T
E(nt)
4" •
_ HH
10 100
lc(n»A)
l
C <mA)
COLLECTOR CUTOFF CURRENT CURRENT GAIN - BANDWIDTH PRODUCT

'
,..,
| T
III
II
.i[\ 'CE- 5V _ ..1
-14
!
l
I
v t
iff s
f
m t
'
1
III
l
C (mA)
2.78.0430B.43O0B
2N4994 2N4995
NPN SILICON RF SMALL TRANSISTORS
CASE TO-92F
THE 2N4994, 2N4995 ARE NPN SILICON PLANAR
EPITAXIAL TRANSISTORS FOR RF & IP SMALL
SIGNAL APPLICATIONS.
ABSOLUTS MAXIMUM RATINGS

Collector-Base Voltage Vcbo 60V
TA<25°C) Ptot 360mW
derate 2.88mw/°C above 25oc

Collector-Base Breakdown Voltage BVcBO 60 V IC-O.lmA Ie-0
Collector-Emitter Breakdown Voltage LVceo 45 V IC-10mA (Pulsed)
lB-0
Emitter-Base Breakdown Voltage BVEBO 4 V lE-0.1mA Ic-0
Collect or Cutoff Current ICBO 100 nA VC b-30V Ie-0
5 VCB-30V Ie-0
Ta-85°C
Collector-Emitter Saturation Voltage VCE(sat) 0.1 0.5 V IC-10mA lB-lmA
Base-Emitter Voltage VBE 0.6? 0.8 V IC-lmA VCE-10V
D.C. Current Gain hfe
2N4994 40 80 1*0 iC-lOmA Vce-IOV
2N4995 100 150 400 IC-10mA VCE-IOV
Current Gain-Bandwidth Product fT 200 400 800 MHz IC-10mA VCE-10D
Collector-Base Capacitance Ccb 1 3-5 PF VCB-10V IE-0
f-lMHz
Feedback Time Constant Ccrbb' 30 100 pS IC-10mA VCE^LOV
f -79.8MHz
2N4994 2N4995
Cob & Ccb V8 VCB HPE (NORMALIZED) vs IC

4 f-lMHz Pulse Test 1
u T ~VCE»10V
"S-1.6
5
t
II
( ob j Mi,
(P») 2
w 0.8 ps_ Nil
II
^Cpb 1
1 i.
0.4 j i
t — 1
ll
i il
12 16 10 100
4 8
: (mA)
VCB (V) C
7
BE & VcE(sat) vs Ic
2.0
i >ulse Test
Hill
1.6 1
\
1.2 III!
llllll
r VBB e
0.8 ycE-lOj
0.4
CE(sat)
Ml
1
1
10 100
• IC-1 oi:
1
M 10
.. ..i
0.1
IC (mA)
*C (mA)
2.78.3500A
2N5086 2N5087 2N5088 2N5089
PNP NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS
CASE T0-92A
THE 2N5086, 2M5087 (PNP) AND 2H5088, 2N5089
(NPN) ARE SILICON PLANAR EPITAXIAL TRANSISTORS
FOR USE IN AF LOW NOISE PREAMPLIFIER CIRCUITS.

ABSOLUTE MAXIMUM RATINGS /«p~i. **-.«-« •rtfwgMfcw. 2N5086 2N5087 2N5088 2N5089
Emitter-Base Voltage vebo 5V 3V 4.5V 4.5V
derate 2.8mW/°C above 25°C
ELECTRICAL CHARACTERISTICS (TA-25°C unless otherwise noted )

Collector-Base Breakdown Voltage BVCBO IC-O.lmA lE-0
2N5086.7 50 V
2N5088 35 V
2N5089 30 V
Collector-Emitter Breakdown Voltage LVcEO I c -lmA (Pulsed)
2N5086.7 50 V IB-O
2N5088 30 V
2N5089 25 V
2N5086.7 10 nA VcB-lOV IE-O
2N5089 50 nA VCB-15V IE-O
2N5088 50 nA VCB-20V IE-O
2N5086.7 50 nA VCB-35V lE-0
Emitter Cutoff Current lEBO
All types 50 nA VEB-3V Ic-O
2N5088,9 only 100 nA VEB-4.5V Ic-0
Collector-Emitter Saturation VcE(sat) IC-10mA iB-lmA
Voltage 2N5086.7 0.08 0.3 V
2N5088.9 0.08 0.5 V
— L
2N5086 2N5087 2N5088 2N5089
PARAMETER SYMBOL MIH TIP MAX raw TEST CONDITIONS

Base-E*itter Voltage be
2H5086.7 0.63 0.85 v IC-lmA YCK-5V
2N5088, 9 0.7 0.8 V IC-10mA VCE-5V
2N5086.7 40 80 MHz I C -0.5i»A YCE-5T
2H5088.9 50 100 MHz IC"0.5mA VCE-5V
Collector-Base Capacitance Cot) VCB-5V lE-0
All types 3 4 PP f-lOOKHz
Emitter-Base Capacitance Cib VEB-0-5V Ic-0

2N5088,9 only 7 10 PP f-lOOKHz
Noise Figure HP
2N5086 only 3 dB IC-20UA VCE-5V
2N5087 only 2 dB RG-lOKfl f-10Hz-15KHz
2N5086 only 3 dB IC-100uA VCE-5V

2N5087 only 2 dB RG-3Ka f-lKHz
2N5088 only 3 dB IC-100uA VCE-5V
2N5089 only 2 dB Rd-lOKfl f-10Hz-15KHz
B.C. AND SMALL SIGNAL CURRENT GAIN (HpE, hf e ) AT VCE-5V Ta-25°C

HpE © IC-O.lmA HpE © IC'lraA Bps • IC-10mA hfe « IC•laA f-lkHz
TYPÎ
MIN MAX MIN. MAX MIN MAX MIN MAX
2N5086 150 500 150 150 150 600
2N5087 250 800 250 250 250 900
2N5088 300 900 350 300 350 1400
2N5089 400 1200 450 400 450 1800
D.C CURRENT GAIN BROAD-BAND NOISE FIGURE

NF
(dB)
11 II
«G=500! 2
',
Sfh*"" S
».
'SSrT" J
'"zlffiS
^sN
2 ;; "G 1K
255086..
1
v CB-5T
11 III
1
_Rg =5
..
Rg=2 C
I
Vf!V« 5V
"f G =10 K f-1OHz 151 Bz
1
-
Him l Ill Pulse Test 1 1—
10 100 1000
l
C (mA) C(pA)
2.78.0450B.45O0B
2N5209 2N5210
NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS
CASE T0-92A
THE 2H5209, 295210 ARE NPN SILICON PLANAR
EPITAXIAL TRANSISTORS TOR USE IN A? LOW
NOISE PREAMPLIFIERS. THEY ARE COMPLEMENTARY
TO THE PNP TYPE 2N5086, 2N5087.
9
EBC
ABSOLUTE MAXIMOM RATINGS

Collector-Emitter Voltage VcEO 50V
Emitter-Base Voltage VEBO 4.5V
Total Power Dissipation (Ta*25°C) Ptot 350mW

derate 2.8mW/oc above 25°C
Operating Junction & Storage Temperature T 1f T, )t« -55 to 150°C
TA-25°C unless otherwise noted )
PARAMETER SYMBOL
^N 5209 2N 5210 UNIT TEST CONDITIONS
MIN MAX MIN MAX
Collector-Base Breakdown Voltage BVcbo 50 50 V IC-O.lmA lE-0
Collector-Emitter Breakdown LVCEO 50 50 V IC-lmA (Pulsed)
Voltage IB-O
Collector Cutoff Current Icbo 50 50 nA VCB-35V Ie-0
Emitter Cutoff Current IEB0 50 50 nA VEB-5V IC-O
Collector-Emitter Saturation VcE(sat) 0.7 0.7 V IC*10mA lB-lmA
Voltage
Base-Emitter Voltage VBE 0.85 0.85 V IC-lmA VCE-5V
D.C. Current Gain HPE 100 300 200 600 IC-O.lmA VCE-5V
150 250 IC-lmA VCE-5V
150 250 IC-10mA VCE-5V
Current Gain-Bandwidth Product fT 30 30 MHz IC-0.5mA VCE-5V
Collector-Base Capacitance Cob 4 4 PP VCB-5V Ie-0 f-lMHz
Small Signal Current Gain hfe 150 600 250 900 IC-lmA VCE-5V f-lKHz
Noise Figure HP 3 2 dB IC-20uA VCE-5V
RG-22KA f-10Hz-15KHz
NP 4 3 dB I c -20uA VCE-5V
Rg-IOKQ f-lKHz
— —
2N5209 2N5210
CURRENT GAIN
vs COLLECTOR CURRENT VS COLLECTOR CURRENT
— rtr
111 III 4#» (MHz)

*T
||
lll'll
'CE- 5V
In
III
—•>
fiQSr \
N
I
2«2S92
1 sy 1 *
t[
S ffl
10 100 ai i io
0.01 0.1
'c(mA)
l
C (mA»
COLLECTOR CUTOFF CURRENT V BE AND vCE(Ht|

Pulse Test
(V)
1-2
VCi -36^
= 1.0
e-° 0.8 • VcE"5V ^=»"

0.6
a4 vCE(»it)
40 80 120 160
TA (°C)
BROAD-BAND NOISE FIGURE
COLLECTOR-BASE CAPACITANCE vt COLLECTOR CURRENT
VS COLLECTOR-BASE VOLTAGE
NF
,, R G =500! I
E~° 3
1 -1MHz
2 ;; «G 1K
R G =2 ' C
..
1 "G =5
R-
VrF=5V.
""?
G =10 K f= .101Hz -15K Hz
i.i 111
n 1 i i
10 100 1000
4 6
V CB (V)
C(MA)
2.78.4500B
2N5294 2N5296 2N5298
THE 2N 5294, 2N 5296 AND 2N 5298 ABE

NPN SILICON SINGLE DIFFUSED MESA POWER
TRANSISTORS DESIGNED FOR LOW SPEED
SWITCHING AND AUDIO AMPLIFIER APPLICATIONS.
THEY FEATURE LARGE SAFE OPERATING
AREA.
ABSOLUTE MAXIMUM RATINGS 2N 5294 2N 5296 2N 5298

Collector-Base Voltage 80V 60V 80V
Collector-Baitter Voltage 70V 40V 60V
Kadtter-Base Voltage EBO 7V 5V 5V
Collector Cnrreirt 4A
Base Current 2A
Total Power Dissipation O *<X25°C tot 36W
• ta«j25wc 1.8W
Junction Temperature I50°C
Storage Temperature Range '•tg -55 to +150°C
THERMAL RESISTANCE
•jo
Junction to Ambient 0. 70°C/W max.
J*
SAFE OPERATING AREA (D.C.)

VCE-4VJ
TA-25 cf
10 30 100 0.01
VCE(V)
2N5294 2N5296 2N5298
ELECTRICAL CHARACTERISTICS ( Ta-25°C uoless otherwise noted)
PARAMETER SYMBOL MIH TYP MAX UNIT TEST CONDITIONS
Collector-Emitter Breakdown Voltage LVCEO* IC-0.1A Ib=o

2N 5294 70 V
2N 5296 40 V
2N ?298 60 V
Collector-Emitter Breakdown Voltage LVcbb* IC-O.IA BbebIOOO.

2N 5294 75 V
2N 5296 50 V
2N 5298 70 V
Collector-Knitter Breakdown Voltage LVCEV* IgsO.lA VEB-1.5V

2N 5294/8 80 V
2N 5296 60 V
Collector Cutoff Current 2N 5294/8 ICER 0.5 mA VCE=50V RBE=10Cvn.
Collector Cutoff Current 2N 5294/8 ICER 2 mA Vce=50V RBgslOOa.

TC=150«C
Collector Cutoff Current 2N 5294/8 ICEV 0.5 mA VCE^SV VEB-1.5V

2N 5296 2 mA VCE«35V VEB-1.5V
Collector Cutoff Current 2N 5294/8 3 mA VcE=65V VEB-1.5V

*CEV
2N 5296 5 mA VCB=35V VEB-1.5V
Tc=150°C
Emitter Cutoff Current 2N 5294 IfiBO 1 mA VSB-7V ic=o

2N 5296/8 1 mA ^-5V ic=o
Base-Emitter Voltage 2N 5294 vbe * 0.70 1.1 V IC=0.5A >

2N 5296 0.80 1.3 V IC= 1 A tit>
2N 5298 0£0 1.5 V IC=1.5A >
Collector-Emitter Saturation Voltage vCE(satf

2N 5294 O.15 1 V IC=0.5A IB=0.05A
2N 5296 0.20 1 V Ic= 1 A lB=0.1 A
2N 5298 0.50 1 V IC=1.5A IB=0.15A
D.C. Current Gain 2N 5294 HpE * 30 120 IC=0.5A VcE=4V

2N 5296 30 120 IC= 1 A VCE=4V
2N 5298 20 80 IC=1.5A VcE=4V
fT 0.8 MHz IC=0.2A VfcE=4V

Current Gain -Bandwidth Product
* Pulse Test : Pulse WLdth-0.3*S, Duty Cycle-1^
12. 77 .MA
COMPLEMENTARY
SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES
COMPLEMENTARY SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES
THE ABOVE TYPES ARE SILICON PLANAR EPITAXIAL

TRANSISTORS TOR GENERAL PURPOSE AMPLIFIERS
AND MEDIUM SPEED SWITCHING APPLICATIONS.
CASE TO-92F
CEB
2N5368(NPN) 2N5372(PNP)
2N5369(NPN) 2N5373(PNP) 2N5371(NPN)
ABSOLUTE MAXIMUM RATINGS 2N5370(NPN) 2N5374(PNP) 2N5375(PNP)
Collector-Base Voltage VcBO 60V 60V 40V
Emitter-Base Voltage Vjjbo 5V 5V 5V
Collector Current IC 300mA 300mA 500mA
Total Power Dissipation (Ta 425°C) P to t 500mW *«
derate 4mW/oc above 25°C
*• 360mW in JEDEC registration.

Collector-Base Breakdown Voltage BVCBO IC-0.01mA Ie-O
Collector-Emitter Breakdown Voltage LVCEO * Note 1 IC-10mA Ib-O
Emitter-Base Breakdown Voltage BVebo t lE-0.01mA Ic-0
2N5368,69,70 50 nA VCB-40V IE-O
255372,73,74 50 nA VCB-40V IE-O
2N5371.75 50 nA VCB-30V lE-0
Emitter Cutoff Current lEBO 50 nA VBB-3V ic-o
Collector-Emitter Saturation Voltage CE(sat) 0.18 0.3 V IC-150mA I B-15mA
Base-Emitter Saturation Voltage .)!•

0.84 1.3 V IC-150mA lB-15mA
Base-Emitter Voltage Vbe * 0.8 1.2 V IC-150mA VCE-10V
2N5368 thru' 2N5371 250 370 MHz IC-20mA VCE-10V
2N5372 thru' 2N5375 150 270 MHz IC-20mA Vce-IOV
Collector-Base Capacitance Ccb
2N5568 thru' 2H5371 8 VCB-10V IE-O
2W5372 thru' 2N5375 -12_ f-lMHz
Vote 1 i Equal to the values of absolute maximum ratings.
* Pulse Test i Pulse Width«0.3mS, Duty Cycle-1^
Turn-On Time (Note 2) ••on

255368 thru' 2N5371 40 nS l c -150mA lBl-15mA
2N5372 thru' 2H5375 50 nS IC-150«U IB1-15«A

VCC-30V
Turn-Off Time (Note 2) toff
2N5368.69 350 nS IC-150mA I B1 — Ib2-15«A
2N5370.71 400 nS Vcc-30V
2N5372.73 150 nS I c -150mA iBi— Isa-iSmA
2H5374.75 1 175 nS Vcc-6V
Note 2 i Test circuits referred to 2N2222/2N2907 data sheets.
D.C. CURRENT GAIN (HPE) AT Ta-25°C VCE-lOV

HPE © lC«lmA HpE © Ic"10mA %• I C -15C«A

2N5368 20 40 60 200
2N5369 50 75 100 300
2N5370 75 150 200 600
2N5371 20 40 60 600
2N5372 20 30 40 120
2N5373 50 75 100 300
2N5374 100 150 200 400
2N5375 20 30 40 400
TYPICAL CHARACTERISTICS (Ta-25°C Pulse Test)
HFE (NORMALIZED) vs ic VBE(sat) & VCE(sat) v Ic

2.0
VCE- 10V
llllll
1" 1#6
M mill
1.2
| -rtJP,
nnu
I a^_ VOLT
w 0.8 .+
r- -
•% 1
III 1,
0.4
111
10
J 100
1
1000 1000
IC (mA)
2.78.6100B.0610B
2N5400 2N5401
2N5550 2N5551
COMPLEMENTARY
SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS
CASE TO-92A
THE 2H5400, 2H5401 (PNP) AND 2N5550, 2N5551 (NPN)
ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL
TRANSISTORS INTENDED FOR GENERAL PURPOSE HIGH
VOLTAGE AMPLIFIER AND SWITCHING APPLICATIONS.
'I
EBC
ABSOLUTE MAXIMUM RATINGS »•»»#*«•«.««»_•«•• .«.««..-. 2N5400 2N54Q1 2N555Q 2N5551
Collector-Base Voltage VcbO 1 3°y l6ov l60T 180T
Emitter-Base Voltage VebO 5V 5V 6V 6V
Total Power Dissipation (Tc<25°C) Ptot ,
1W
derate 8mW/ C above 25°C
(TA<25°C) 350mW
derate 2.8mW/oc above 250c
Operating Junction & Storage Temperature Tj, t Big -55 to 150«>C
ELECTRICAL CHARACTERISTICS (TA-25°C unless otherwise noted'

Collector-Base Breakdown Voltage B^CBO IC-O.lmA Ie-0
I
Collector-Emitter Breakdown Voltage LVCEO Note 1 IC-lmA IB-O
Emitter-Base Breakdown Voltage BVsBO i iE-O.OlmA Ic-0
2N5400, 5550 100 nA VCB-100V Ie-O
2N5401, 5551 50 nA VCB-120V Ig-0
2N5400, 5550 100 VCB-100V Ie-O
ta-ioooc
2N5401, 5551 50 VCB-120V IE-O
Ta-ioooc
Emitter Cutoff Current lEBO
2N54O0, 5401 50 nA VEB-5V IC-0
2N5550, 5551 50 nA VEB-4V Ic-0
Collector-Emitter Saturation Voltage VCE(sat )
2N5400, 5401 0.2 V IC-10mA iB-lmA
2N5550, 5551 0.15 V IC-10mA IB-lmA
Note 1 1 Equal to the values of absolute maximum ratings
2N5400 2N5401 2N5550 2N5551
PARAMETER SYMBOL MIN TTP MAX UNIT TEST CONDITIONS

Collector-Bel tter Saturation Vol tag* VCE(sat)
2H5400, 5401 0.5 V IC-50«A IB-5W
2N5550 0.25 V IC-50«A I3-5mA
2H5551 0.2 V Ic5C«A jp*%K
Base-Emitter Saturation Voltage BE(sat)
All types 1 y IC'lOfcA &«lftA
2H54O0, 5401 1 T Ifi-50iA 5^S»A
2N5550 1.2 V U-504A IB-5.U
2H5551 1 V IC-5QBA IB-5»A
2H5400 100 160 400 MHa ie-iciBA Tog-iov
2H5401, 5550, 5551 100 160 JOO KEs. IC-1C*A VCE-IOT
Collector-Base Capacitanoe Cob 4 6 P* »CB-10V IE-O f-lMHi
Quitter-Base Capacitance Cib
2N5550 only 30 pP vsa-o.5y ic-o
2N5551 only 20 pP f-lMHa
Noise Figure HP IC-250UA VCB-5V
2N54O0, 5401, 5551 only 8 48 HG-ltftf-10H*-15KH«
2N5550 only 10 dB
D.C.AND SMALL SIGNAL CURRENT GAIN AT TA-25°C

HPE IC-laA
TYPE hf e e Vcb-IOV
6 Ic-lmA VCE-5T © IC-10mA ?CE-5V IC-50mA VCE-5V f-llcHa
MIN MAX MIN MAX MIN MAX MIN MAX
2N5400 30 40 180 40 30 200
2N5401 50 60 240 50 40 200
2N5550 60 60 250 20 50 200
2N5551 80 80 250 30 50 200
HTO V8 ic (sat) & VcE(aat) vs Ic

200 1.0 Ta-25°C
Pulse Test Pulse Test I
A 0"C ~ -LIMB
T
:i6o 0.8
-- 1" 7{ '
Pf' 1 1
.0.
1?0 J)! 0.6 J^r^T
IfjJNC^
VOLT
80 111 0.4
40 0.2
...VCE(sat)
mil Hill III
1 10 100 1 10
JC XC
(mA) (mA)
2.78.0710B.7100B
COMPLEMENTARY SILICON GENERAL PURPOSE AF TRANSISTORS
CASE TO-92P
THE 2N5447, 2N5448, 2N5449, 2*5450 ABE
SILICON PLANAR EPITAXIAL TRANSISTORS
FOR GENERAL PURPOSE MEDIUM POWER AMPLIFIER
APPLICATIONS. THE 2*5447 t 2N5448 ARE PNP
AND ARE COMPLEMENTARY TO THE NPN 2N5449»
2N5450 RESPECTIVELY.
CEB
2N5449(NPN)
ABSOLUTE MAXIMOM RATINGS -,«»*«» *——*—— 2N5447(PNP) 2N3448(PNP) 2S5450(SPN)
Collector-Base Voltage VCK 40V 50V 50V
Bnitter-Base Voltage VgBO 5V 5V 5V
Collector Current L3 0.2A 0.2A 0.8A
Collector Peak Current (tOOmS) leg 0.6A 0.6A

Total Power Dissipation (Tc<25°C) Ptot 1.2V
(TA <25°C) 500mW »•
Operating Junction & Storage Temperature Tj, TB tg -55 to 150°C
•• 360mW in JEDEC registration.
Ptot vs Ta HFE (NORMALIZED) vs, Ic

2.0 2.0
T 'l-25°c|
mill i
II!
III JE-5V j
» Test
1.5
Ptot
tfl
(W)
1.0 v& 21
ifim
^V tffi™*:
0.5 ,A>^v r
mini T
If
\W S
5
llllll
fV' fr N
mini i llllll
50 100 150 200 10 100 1OO0
ta (°c) JC (mA)
—
PARAMETER SYMBOL KIN TYP MAX UNIT TEST CONDITIONS

Collector-Base Breakdown Voltage BVCBO IC-O.lmA lE-0
215447 40 V
2N5448, 2N5449, 2N5450 50 V
Collector-Emitter Breakdown Voltage LVCEO * IC-10mA lB-0

2N5447 25 V
2N5448, 2*5449, 2N5450 30 V
Emitter-Base Breakdown Voltage bvebo 5 V lE-0.1mA ic-o
Emitter Cutoff Current lEBO 100 nA VEB-3V ic-o
Collector-Bnitter Saturation Voltage VCE(sat)*

2*5447, 21T5448 0.25 V IC-50mA lB-5«A
2N5449 0.6 V IC-lOOmA IB-5mA
2N5450 0.8 V IC-100mA lB-5«A
Base-Emitter Voltage vbe

2N5447, 2N5448 0.6 1.0 V IC-50mA VCE-5V
2N5449, 2H5450 0.5 1.0 V IC-lOOmA VCE-2V
D.C. Current Gain 2N5447 HPE » 60 300 IC-50mA VCE-5V

2N5448 30 150 IC-50mA VCE-5V
2N5449 100 300 IC-50mA VCE-2V
2H5450 50 150 IC-50BA VCE-2V

2N5447, 2N5448 100 MHz I C -50mA VCE-5V
2N5449, 2H5450 100 MHz IC-50mA VCE-2V
Collector-Base Capacitance Cob 12 P* Vcb-IOV IE-O

f-lMHs
7CE(sat) & Vbe vs fr vs ic

ic
in v 25°c
T Pulse Test
250
itL-25°C
CE-5V
1.6 200 \
s* \
1.2 fT 150 1 \
\
VOLT III
' '
(MHz) /I \
Vbe
"ft V cs-2
— s» 100 /
0.4 50
TCE(sat ) '
e c-io
:
5" ||
llllll
10 100 1000 10 100 1000

IC (mA) Z C (-A)
1.78.O65OB.65O0B
: -
2N5490 2N5492 2N5494 2N5496

THE 2H 3490, 2N 5492 , 2N 5494 AND 2H 5496 CASE T0-220B

ARE NPN SILICON SINGLE DIFFUSED MESA POWER
TRANSISTORS DESIGNED FOR LOW SPEED SWITCH-
ING AND AUDIO AMPLIFIER APPLICATIONS.
TRET FEATURE LARGE SAFE OPERATING AREA.
ABSOLUTE MAXIMUM RATINGS 2N5490/4 2N5492 2N5496

Collector-Base Voltage VcBO 6CV 75V 90V
Collector-Ealtter Voltage VCEO 40V 55V 70V
Emitter-Base Voltage VebO 5V
Base Current Ir 3A
Total Power Dissipation • T (tf25°C Ptot 50W
• Ta,425 C 1.8W
Storage Temperature Range Tgtg -55 to +150°C
THERMAL RESISTANCE
Junction to Case
Junction to Ambient
SAFE OPERATING AKEA (D.CJ

10 :
f -TC -25°C
: 2N549 )^2N549 4--) fff'

+
2N5492 - - -) jt
0.3
. 2N5496 -
IP! i Jill,
0.1
3 10 30 100
VCE(V)
*C (A)
2N5490 2N5492 2N5494 2N5496

Collector-Fitter Breakdown Voltage LVqbO * IC-O.IA Ib-0

2N5490/4 40
2N5492 55 V
2N5496 70 V
Collector-Emitter Breakdown Voltage LVCER* IC-0.1A RHE-lOOil

2U5490/4 50 V
2N5492 65 V
2N5496 80 V
Collector-Eaitter Breakdowi Voltage LVcEV * IC-0.1A

2N5490/4 60 V VEB-1-5V
2N5492 75 V
2N5496 90 V
Collector Cutoff Current 2H5490 1 CER 2 mA VCE-40V RBB-lOOil

2N5492 0.5 mA VCE-55V Rbe-IOOA
2N5494 0.5 mA VCE-40V RBB-lOOfl.
2N5496 0.5 mA VCE-70V RBE-lOOil
Collector Cutoff Current 2N5490 ICER 5 mA VCE-40V RBE-lOOn.

© Tc-150°C 2N5492 3.5 mA VCE-55V RBE-lOOn.
2N5494 3-5 mA VcrW>v rbe-ioo/1
2*5496 3-5 mA Vce"70V Rbe-IOO**
Collector Cutoff Current 2JJ5492 ICEV 1 mA VCE-70V VBB-L5V

2H5494 1 mA VCE-55V VgB-1.5V
2N5496 1 mA VCE-85V Veb-I.SV
Collector Cutoff Current 2M5492 ICEy 5 mA VCE-70V VBB-1.5V

• Tc-150°C 2K54% 5 mA VCE-55V VgB-1.5V
2N5496 5 mA VCE-85V VKB-1.5V
Eoitter Cutoff Current IEBO 1 mA Vbb"5V IC-0
Base-Emitter Voltage 2H5490 VBE* 0.83 1.1 V I(T 2A vCff* v

2M5492 0.92 1.3 V IC-2.5A VCE-4V
2N5494 1.0 1.5 V IC-3A VCE-4V
2M5496 1.05 1.7 V IC-3.5A VQB-4V
Collector-Eaitter Saturation Voltage VcE(aat) »
2N5490 0.25 1 V IC-2A IB-0.2A

2N5492 0.3 1 V IC-2.5A IB-0.25A
2*5494 0.35 1 V IC-3A IB-0.3A
2H5496 0.4 1 V IC-3-5A Ib-0.35A
B.C. Current Gain 2K5490 HFE* 20 100 IC-2A Vcb<V

2N5492 20 100 IC-2.5A VCB-4V
2N5494 20 100 I(-3A VCE-4V
2N5496 20 100 IC-3.5A Vcb<V
Current Gain-Bandwidth Product *T 0.8 MH» ic-o.sa var4V

J
* Pulse Test : Pulse ULdth-0.3mS, Duty Cycle-ij!
12.77.MB/MD
THE 2H5810 THROUGH 2N5819 ARE SILICON PLANAR CASE TO-92F WITH X-67
LEAD PREFORMED HEAT SINK
EPITAXIAL TRANSISTORS FOR USE IN AF DRIVERS AND
OUTPUTS, AS WELL AS FOR UNIVERSAL APPLICATIONS.
THEY ARE SUPPLIED IN TO-92F PLASTIC CASE WITH
OPTIONAL X-67 HEAT SINK. THE 2N5810, 2, 4. 6. 8
ARE NPN AND ARE COMPLEMENTARY TO THE PNP
*
——
I
To!
2N5811, 3, 5, 7, 9.
CEB
2N5810 , 2(NPN) 2N5814, 6, 8(NPN)

ABSOLUTE MAXIMUM RATINGS tomoiK^MMi 2N5811 . 3(PNP) 2N5615, 7, 9(PNP)
Collector-Base Voltage CBO 35V 50V

Collector-Emitter Voltage (VBE-O) VCES 35V 50V
Collector-Emitter Voltage (lB-0) VCEO 25V 40V
Emitter-Base Voltage vkbo 5V
Collector Peak Current (t<10mS) ICM 1.5A
Total Power Dissipation e Tc^25°C Ptot 1.4W
With X-67 Heat Sink © Ta<-25°C SOOaW
No Heat Sink 6 Ta<25°C 625bW *
Operating Junction & Storage Temperature Tj, Tstg -55 to 150<>C
*• 500mW in JEDEC registration.
Ptot 1 re ic BFE (NORMALIZE*) vs Ic

2.0
T 25 ° C
Iii-
Vce-2V III
^
"S
1
1.6
T.S w Pulse Test
'
b k
(W) 3 l,* HP" .
1 ,0
§ PNP"
Wit
sk M
p
nfl -
S \llllll
^ N Nil
O.S
[Vy
tea*. S$£fc_ 0.4
50
I ..
100
1 ^ 150 200
111
10 100
fli
llllll
1000
Ta (<>c) IC (mA)

255810 thru' 255819
PARAMETER SYMBOL
MAX
nor TEST C05DITI0HS
MI5
Collector-Base Breakdown Voltage BVCES IC-0.01mA VBE*0
2H5810, 1, 2, 3 35 V
2*5814, 5, 6, 7, 8, 9 50 V
Collector-a»itter Breakdown Voltage LVCEO * IC-lOaA IB-O
255810, 1, 2, 3 25 V
255814, 5, 6, 7, 8, 9 40 V
15 A
>> VCB-25V Ie-0
ta-ioooc
Quitter Cutoff Current IEBO 10 /» VBB-5V IC-0
Collector-Emitter Saturation Voltage VCE(sat)* 0.75 V IC-500BA lB-50mA
Base-Enitter Saturation Voltage VBE(sat)» 1.2 V IC-500mA IB-50BA
Base-Eaitter Voltage VBE * 0.6 1.1 V IC-500mA VCE-2V

D.C. Current Gain HpE * IC-2BA VCE-2V
255810, 1 60 200
255812, 5 150 500
255814, 5 60 120
255816, 7 100 200
255818, 9 150 300
D.C. Current Gain HPE * IC-500aA Vcb-2V

255810, 1 45
255812, 3 60
255814, 5 20
255816, 7 25
255818, 9 25
Current Gain-Bandwidth Product fT IC-5C«A VCE-2V

255810, 1, 4, 5 100 MHz
255816, 7 120 MHz
2N5812, 3, 8, 9 135 MHz
Collector-Base Capacitance Cob 15 pP VcB-lOV IB-O

f-lMHz
Efflitter-Base Capacitance Cib 55 pP VEB-0-5V IC-0

f-lMHz
• Pulse Test t Pulse VH.dth-0.3oS, Duty Cycle-1^
TCE(sat) & TBE ts Ic fT VS IC
250
200
"__.J ffl
.... VS 5
VCB-2V
::::i~::;; :M
fT
150 ....eL^: .
vli
\M
(MHz) ...Jr ....
100 -/% -- -B
_^ J ....
....
.11
.m
__.J
50
-1 - -41
_il
_...! ....
10 100 1000 10 100 1000
IC (mA) 1.78.8300A.0830A
*C (mA)
CASE T0-92F X-67 Heat Sink

THE 2N5820 THROUGH 2N5823 ARE SILICON PLANAR
EPITAXIAL TR ANSISTORS FOR USE IN AF DRIVERS
AND OUTPUTS, AS WELL AS FOR UNIVERSAL APPLI-
CATIONS. THEY ARE SUPPLIED IN TO-92F PLASTIC
CASE WITH OPTIONAL X-67 HEAT SINK. THE
2N5820, 2N5822 ARE NPN AND ARE COMPLEMENTARY f
Kim
TO THE PNP 2N5821, 2N5823. ^
CEB '
2N5B20 ,2fNPN)
ABSOLUTS MAXIMUM RATINGS — 2N5821 »3(FNP)
Collector-Base Voltage CBO 70V
Collector-Bnitter Voltage (VBE-O) VCES 70V
Collector-Bnitter Voltage (lB-0) vCEO 60V
Bnitter-Base Voltage VEBO 5V
Collector Current IC 1A **
Total Power Dissipation (Tc425°C) Ptot 1.4W **
With X-67 Heat Sink (Ta*25°C) 8O0mW**
No Heat Sink (Ta£25°C) 625mW*«
Operating Junction & Storage Temperature T 0» T8tg 55 to 150<>C
»* This exceeds JEDEC registered value.
Ptot TA HFE (NORMALIZED) vs Ic

2.0 2.0 T A-25°
lllll C
TPulse Testt
1.6
1.5
111111
k t
x
1
Ptot
(mW) 1.0 1 î s
Wit
NT, X
»*
0.8
J
1
M
0.5
^S
*§*p^ fc
0.4
t
1
J I
J
50 100 150 200 10 100
T A (°C)
Ic (mA)
Collector-Knitter Breakdown Voltage BVcES 70 V IC-0.01mA Vbe-0
Collector-Emitter Breakdown Voltage LVcBO * 60 V IC-10mA Ib-0
15 VCB-25V Ig-0
TA -100<>C
Emitter Cutoff Current IEBO 10 Veb-5V IC-0
P*
Collector-Quitter Saturation Voltage VcE(sat; « 0.25 0.75 V IC-500mA Ib-50«A
Base*-Efflitter Saturation Voltage BE(sat] « 0.9 1.2 V IC-500mA Ib-50bA
Base-Bnitter Voltage VBE • 0.6 0.85 1.1 V I C -500mA Vcb-2V
D.C. Current Gain HpE *
2N5820, 2N5821 60 120 I c »2mA VCE-2V
2R5822, 2H5823 100 200 l c -2mA VCE-2V
2H5820, 2N5821 20 IC-500mA VCE-2V
2N5822, 2R5823 25 I C -500mA VCE-2V
Collector-Base Capacitance Ccb 15 P? VCB-10V Ig-0
f-lMHz
* Pulse Test i Pulse Width«0,3mS, Duty Cyde«l#
VBB(eat) k VCE(aat) ire *C fT vs Ic

2.0 250
>ulse Test T -25°C
TjJ
TA-25°C 1
« CE-2V
flj 1 '
1.6 200 llllll
n
1.2 n 150 "*"'
VOLT
tjl 7
N
0.8 HI
rBsl sat
^
(MHz)
1 1n
r
rj|TTi
0.4
llll
V ceOj at;
10 100 1000 10 100 1000

IC (mA) IC (mA)
2.78.8100B.0810B
THE 2*5824 THROUGH 2*5828 ARE UPS SILICON CASE TO-92F

PLAHAR EPITAXIAL TRAHSISTORS TOR USE I* AF
SMALL SIGWAL AKPLIPIBRS AND DIRECT COUPLED
CIRCUITS.
CEB

Collector-Baitter Voltage CEO 40V
Enltter-Base Voltage VbbO 5V

Total Power Bissipation (Ta<25°C) ptot 560mW
derate 2.88mV/°C above 25°C
Operating Junction & Storage Temperature Tj. TBtg -55 to 150°C

PARAMETER SYMBOL MI* TYP MAX UWIT TEST CONDITIONS
Collector-Base Breakdown Voltage BVcBO 50 V IC-0.01mA lE-0
Collector-Emitter Breakdown Voltage LVCEO 40 V I c -10mA (Pulsed)
lB-0
Collector Cutoff Current ICBO 50 nA Vcb-40V lE-0
10 VCB-40V Ik-0
Ta-IOOOC
Baitter Cutoff Current ISBO 50 nA Vbb-5V IC-0
Collector-Enitter Saturation Voltage VCE(sat) 0.07 0.125 V IC-10mA iB-lmA
Base-Emitter Saturation Voltage TBE(sat) 0.7 0.78 V IC-10nA iB-lmA
Base-Emitter Voltage BE 0.5 0.65 0.9 V IC-2mA VcE-lOV
2*5824,5,6 90 250 MHs IC-2mA VCE-lOV
2*5827,8 90 350 MHz IC-2mA VCE-lOV
Collector-Base Capacitance Ccb 1.9 4 PP VCB-10V lB-0
f-lMHa
Feedback Time Constant Ccibb' I c -2mAVCE-lOV
2*5824 65 PS f-31.8MHs
2*5825,6 80 PS
2*5827,8 100 PS
B.C. AND SMALL SIGIAL CTOBHTP OAIN (HPE, hf e ) AT Ta-25°C
TYPE *B • IC-2IU V<S^5V hf« • Ic-2«A CI-5V f-lKHs

Mnr MAX MIH MAX
2H3624 60 120 60 180
2H5825 100 200 100 300
2H5826 150 300 150 450
2H5827 250 500 250 750
2H5828 400 800 400 1200
TYPICAL CHARACTERISTICS AT TA-2G°C
D.C. CURRENT GAIN VBE AND vCE(Mt)

iniii i in r Pulse Test
«fe Pulse Teat (V)
Vet*™
VB E
• Vce-IOV — .-« !
5>*"-
If —H ITfT
200
TTTTII
vCE(sat)
—— --•'
IJ1I
o 1 =\HhTTtt
1 10
IcbnA) lc(n»A)
1Y-Pt UNETE RS (NORM AL ZE 3)

VS COLLE(rroR cur REf T
t"
'Typiael «etoM at
^
1
Vce-5>/ IC-2mA varw
ha (N»
f
M f-IKHz
h p»
H FE (D.C) 300
hj,(1KHz) 4»DKohms
1.0 = hfc hf,dKHi) 330
IV»(1KHz) 2x10"4
h o. 30|jfnhM
hoaCIKHz)
02
l
C (mA)
2.78.4300A/B
2N6027 2N6028
PROGRAMMABLE UNIJUNCTION TRANSISTORS
The Micro Electronics Programmable Unijunction Transistor (PUT) is a three -terminal planar passivated PNPN
device in TO • 92 package. The terminals are designated as anode, gate and cathode.
The 2N6027 and 2N6028 offer outstanding circuit design flexibility. External resistors can be selected to meet
designers' needs in programming the unijunction characteristics such as ""], R M , l

P and l v .
The 2N 6028 is designed for long interval timers and other applications requiring low peak point current. The
2N 6027 is designed for general use where the low peak point current of the 2N 6028 is not essential.
For further information, refer to Application Notes No*. 143, 144 and 158.
*r =
FEATURES APPLICATIONS PACKAGE

ePROGRAMMABLE Rui ki W T)t OSCILLATORS AND TIMERS TO -92
e LOW LEAKAGE CURRENT TRIGGER DEVICES
e LOW PEAK POINT CURRENT LATCHING SWITCHES
e LOW FORWARD VOLTAGE
e HIGH PULSE OUTPUT VOLTAGE PULSE SHAPING CIRCUITS
• LOW COST SENSING CIRCUITS
ABSOLUTE MAXIMUM RATINGS AGK

Voltage Currant
Gate-Cathode Forward Voltage +40 V Peak Forward Anode Current,
—3 V Non-repetitive (lO 'sec pulse) 3 A
Gate-Cathode Reverse Voltage
Gate-Anode Reverse Voltage +AO V DC Gate Current ±20 mA
Anode-Cathode Voltage '±40 V Capacitive Discharge Energy! 250 mJ
Currant
Total Average Power* 300 mW
DC Forward Anode Current* ISO mA Temperature
Peek Forward Anode Current,
Operating Ambient*
Repetitive (too 'sec pulse Temperature Range —5O Cto +IOO*C
width, 1% duty cycle) I A 'Derate currents and powers l%/°C above 23°C
(ao «cec pulse tE-| CVcapacitor discharge energy with no
width, 1% duty cycle) 2 A current limiting
2N6027 2N6028
ELECTRICAL CHARACTERISTICS AT Ta - 25° C ««*. oth«w« ^kmi

2N6027 2N6028
CHARACTERISTICS SYMBOL FIG. NO. UNITS TEST CONDITIONS
Min. Max. Min. Max.
Peak Point Current |p 1 2 .15 MA Vs- 10 Volts Ro-1 Mo

5 1.0 MA Vs- 10 Volts Ro-IOKn
Offset Voltage Vt 1 .2 1.6 .2 .6 Vote Vs- 10 Volts Rq-1 Mo
.2 .6 .2 .6 Volts Vs- 10 Volts Rq-10 Kn
Valley Current Iv 1 SO 25 MA Vs-10 Volts Rq-1 Mn
70 25 MA Vs- 10 Volts Rq-10 Kn
Gate-Anode Leakage Current kSAO 2 10 10 nA Vs- 40 Volts. Ta-25*C
100 100 nA Ta-75°C
Gate - Cathode Leakage Current kSKS 3 100 100 nA Vs- 40 Volte, Va-0
Forward Voltage Vf 1 1.5 1.5 Volts If = 50 mA
Pulse Output Voltage Vo 4 6 6 Volts
Pulse Voltage Rate of Rise tr 4 80 80 nsec.
IGKS
<sn
$ J_ Vs J_Vs
J
Figure 2 Figure 3
J>
n. ^L
Va
». *-Vt
W
1
*J "
Figure 1
,
2N6027 2N6028
TYPICAL CHARACTERISTICS AT Ta-25°C (unless otherwise specified)
llllll«lllllli!MIIIII!VHll>!
llllliMBII|IV.^*IMIi H»TV- i
K.BIIII
|llllll IlllJfJlSlll!,
1
aimi
5SS!ii" TJafiiir "i!li |
72fci!i!i SSSilli
Ip VS GATE SOURCE RESISTANCE Iv VS "ON STATE" GATE CURRENT
*"* "*j" s v.*»Jxn

^ "
1
B
^>
1! ,
i P*^."
»
nm
TTtHnNATUW-t mmw tummtum -*
Ip VS TEMPERATURE AND Ro Iv VS TEMPERATURE AND Ro
i r -
n
'"*
I, fe.ua jS
- WVM.1*
Hi
I
i Xe-i
i "
6 , i
IW
<
,
,
Vt VS TEMPERATURE AND Ro PULSE OUTPUT VOLTAGE

2N6027 2N6028
APPLICATIONS
Precision Relaxation Oscillator
The use of the diode 1N4154 and 1 meg resistor at the gate
d
giveslow peak point current, therefore reducing the shunting effect
of the PUT on Ct during the charging period. The diode also tem-
perature compensates Vaq which drifts at about — 2.5mV per °C.
The circuit oscillates at 100Hz which is kept within 1% from

-30°C to 75°C.
Ten-minute Time Delay Relay
The PUT uses high gate source resistance

(1M-ohms) and draws negligible current from the RC
network during the delay time. When the SCS is
triggered by the PUT, the relay is energized. C is
short-circuited by a pair of relay contacts. This
condition ensures that accurate timing is repeatable
because C is always charged from zero volt after
the circuit is reset. Time delay is approximately
10 minutes at R-4.7 M-ohms.
Monostable Multivibrator
The PUT is normally ON. A positive

pulse at the input turns Qi on, C is discharged
rapidly through the saturation resistance of
the collector-emitter junction. The PUT be-
©+.Yd
comes OFF. At the removal of the input
pulse, Qi is cut off. C is charged through R
towards +20V. When the peak point voltage
is reached, Ca fires and returns to the latching
state again due to the large holding current

X
through R.
Warble Alarm Circuit
This alarm can be easily heard in noisy background.

!!-
Ob and 03 forms a tone generator in which the fundamental
frequency is modulated by the sawtooth output of Qi.
^€>
Tone frequency
Sawtooth frequency
<« (500-800)Hz
— 2.5Hz
r¥ - W
SCR Phase Control
The conduction angle of the SCR is controlled by the

PUT oscillator which is synchronized from the a.c. line. This
ensures that the SCR is triggered at the same point on the
ax. cycle each time.
The conduction angle of the SCR can be varied from

30° to 160° by using the 100 k-ohm variable resistor.
3.78.S210
2N6111 2N6109 2N6107
THE 2N 6111, 2N 6109 AND 2N 6107 ABE PNP

SILICON^ EPITAXIAL BASE POWEB TBANSISTCBS
DESIGNED FOB SWITCHING, DBIVEB AND OUTPUT
STAGES IN AUDIO AMPLIFIEBS. THE 2N 6111,
2N 6109 AND 2N 6107 ABE COMPLEMENTABT TO
2N 6288, 2N 6290 AND 2N 6292 BESPECTIVELY.
BCE
ABSOLUTE MAXIMUM BATINGS

Collector-Baae Voltage Vcbo
Collector-Eaitter Voltage Vceo
Eaitter-Base Voltage •VebO
Collector Current ic
Base Current IB
Total Power Dissipation 9 Tc<25°C Ptot
Storage Temperature Range Tstg
THEHMAL RESISTANCE
Junction to Care "jc 3.12°C/V
VS
SAFE OPEJIATING AREA (».C.) FE NOHMALIZEI) *C
10 '•=^ :£— _TC-25°C 1.6 •
"mill
_r ji
4-41
„ ll'll
l.U
a N6111- U.6
0.3 JT6109- II
0.4
Pulse Test
0.2 .-Vjp*- V? f—-
l!ll
0.1 TjL-2 5°cir
3 10 30 100
~V 0.01 0.1 1 10
CE(V) "X
C (A)
2N6111 2N6109 2N6107
ELECTRICAL CHARACTERISTICS (*k45°C unless otherwise noted)

PARAMETER SYMBOL MIN up MAX HOT TEST CONDITIONS
Cell«ctor-4dtter Breakdown Voltage -1VCE0* -IC-0.1A lB-0
2N 6111 30 V
2N 6109 50 V
2N6107 70 V
Collector-Emitter Breakdown Voltage 'LVcBB • -IC«0.1A BBB>100Jl
2N 6111 40 V
2N 6109 60 V
2N 6107 80 V
Collector-Emitter Cutoff Current -ICBO
2N 6111 1 A -VCE-20V lB=0
2N 6109 1 A -VCEÔV lB=0
2N 6107 1 A -VCB=60V lB=0
Collector-Emitter Cutoff Cnrrent -ICBB
2N 6111 0.1 A -VCE-35V HBE-100ft
2N 6109 0.1 A -Vce»55V HflB-lOOA
2N 6107 0.1 A -Vce»75V BbB-IOOA
2N 6111 2 A -Vcb=30V Rbe=100JI
Tc«1500C
2K 6109 2 nA -VcB=50V bbe=iooa
Tc=150*C
2N 6107 2 A -VCE=70V HBB=100A
Tc-150OC
Collector-Emitter Cutoff Cnrrent -ICEV
2N 6111 0.1 A -VCE=37.5V -VEB-1«5V
2N 6109 0.1 mA -Vce=56V -VEB-1-5V
2N 6107 0.1 mA -VCB=75V -VEB-1.5V
2N 6111 2 mA -VcE=30V -VEB-1.5V

Tc-150«C
2N 6109 2 A -Vcb=50V -VEB-1.5V
TC=150°C
2N 6107 2 A -VCE=70V -VEB-1-5V
TC»150°C
Slitter-Base Cutoff Current -Iebo 1 mA -VEB=5V Ic=0
Collector-Baitter Saturation Voltage -VcE(sat) *
2N 6111 0.^ 1 V -IC=3A -JB=0.3A
2N 6109 0.3 1 V -IC=2.5A -IB-0.25A
2N 6107 0.3 1 V -IC=2A -IB-0.2A
All types 3.5 V -IC=7A -IB-3A
Base-Emitter Voltage 2N 6111 -VBE * 1.05 1.5 V -IC=3A -VC B=*V
2N 6109 0.97 1.5 V -IC»2.5A-VCB»4V
2K 6107 0.93 1.5 V -IC=2A -Vce»4V
All types 3 V -IC=7A -VCB=4V
B.C. Current Gain 2N 6111 HFE * 30 150 -IC-3A -VCB«W
2N 6109 30 150 -IC«2.5A -VCE»W
2N 6107 30 150 -IC-2A -VCE-4V
All types 2.3 -IC-7A -VCB-4V
Current Gain-Bandwidth Product *T 10 MHz -IC-0.5A -VCE-W
Collector-Base Capacitance Cob 250 I* -VCB-lOV Ib-0 f-lMHz
Small Signal Current Gain hfe 20 -IC=0.5A-VCB*W f.JOKHs
* Pulse Test t Pulse Width-0.3mS, Duty Cycl«»ljt
12.77-0850E
2N6121 2N6122 2N6123
NPN SILICION EPITAXIAL BASE POWER TRANSISTORS
TBB 2N 6121, 2N 6122 AND 2N 6123 ABB NPN CASE T0-22OB

SILICON EPITAXIAL BASB POWER TRANSISTORS
DESIGNED FOB SWITCHING, DRIVER AND OUTPUT
STAGES IN AUDIO AMPLIFIERS. TBB 2N 6121,
2N 6122, 2N 6123 ABB COMPLEMENTARY TO
2N 6124, SN 6125, 2N 6126 RESPECTIVELY.
CollectoxHBaae Voltage v 45V 60V 80V

CBO
Collector-Emitter Voltage V 45V 60V 80V
CEO
Emitter-Baae Voltage V 5V
BBO
Collector Current
h 4A
Base Current
h 1A
Total Power Dissipation (T ^25°c) P 40W
c tot
Junction Temperature 150°C
»J
Storage Temperature Range Tetg -55 to +150°C
THERMAL RESISTANCE
Junction to Caae 3.12°C/W
3«s
SAFE OPEitATING AllEA (».C.)

50
40
j*
3D
V
h r
;'
v*
h X:
100 200 100

t
a(°c) CB(V)
2N6121 2N6122 2N6123
ELECTRICAL CHARACTERISTICS (Ta=25°C unless otherwise noted)

BARAMETEB SYMBOL MIN TYP MAX CNR TEST CONDITIONS
Collector-Better Breakdown Voltage WcEO * ic->o.u IBFO
2N 6121 45 V
2N 6122 60 V
2N 6123 80 V
Collector-Base Cutoff Current !CB0 0.1 aA cbfYcbo ie=o
Collector-Emitter Cutoff Current ICEO 1 A. VCE»Vce0 IbbO
Collector-Baitter Cutoff Current ICEV 0.1 A VCB=VCB0 Veb-1.5V

2 mA VCB=VCE0 VEB-1.5V
Tc=125°C
Baitter-Base Cutoff Current IEBO 1 A VEB=5V ic=o
Collector-Baitter Saturation Voltage vCE(sat)» 0.28 0.6 V IC-1.5A IB=0.15A

1.4 V IC=4A IB=U
Base-Baitter Voltage VflE * 0.87 1.2 V IC=1.5A VcB=2V
D.C. Current Gain 2N 6121,6122 BIB * 25 100 IC=1.5A VCE-2V

2N 6123 20 80 IC=1.5A VCE=2V
2N 6121,6122 HpE * 10 IC=4A VC E*2V
2N 6123 7 IC=4A VCE"=2V
Current Cain-Bandwidth Product fT 2.5 MHs ic=u VCB=4V
Saall Signal Current Gain hfe 25 IC=0.1A Vce=2V

f=lKH*
* Pulse Test : Pulse Vidthn0.3nS, Duty Cycle=l}t
HpE NORMALIZED vs *€ TCE(sat) ttÊnlC

inr
12.77.8700E
2N6124 2N6125 2N6126
THE 2N 612%, 2H 6125 AND 2N 6126 ARK IMP CASE TO-220B

DESIGNED FOB SWITCHING , DRIVER AND OOTPCT
STAGES IN AUDIO AMPIJFIBRS. THE 2N 6124,
2N 6125, 2N 6126 ABE COMPLEMENTARY TO
2N 6121, 2N 6122, 2N 6123 RESPECTIVELY.
BCE
ABSOUttE MAXDflM RATINGS 2N 6124 ssurn 2N 6126

Collector-Base Voltage VcbO 45V 60V 80V
Collector-Boitter Voltage VCBO 45V 60V 80V
Emitter-Base Voltage VBBO 5V
Base Current IB 1A
Total Power Dissipation (Tc < 25°C) ptot 4CW
Storage Temperature Range *stg -55 to 150°C
THERMAL RESISTANCE
Junction to Case »jc 3.12°C/V
ptot VI *A SAFE OPERATING AREA (P.C.)

10
50 =: Tc-25°C
Ptot -ic
S^N
00 30 V U)
\k
20 M k
'*
:4ft
V% 1
0.3 "
2H 612
r
21 612 -T^
£
•
2E 612
100 200 3 10 30 100

*A(«C) -VCB(V)
2N6124 2N6125 2N6126
KUKTBXCAI. CBJBACTBISTICS (*A-29°C unlooa otherwise notod]
PABiMKTR SYMBOL MDI TIP MIX OMIT TES* CONDITIONS
Colloctor-Baittor Breakdown Voltage -LTcBO* -IC-O.U IbpO

201 6184 49 V
2N 6189 60 V
2N 6186 80 y
Collactor-Baoe Cutoff Curront -ICBO 0.1 4 VCB-VCBO I»*>
Collector-Baitter Cutoff Current -ICBO 1 A VCB*TcBO IB-O
Colloetor-Baittor Cutoff Currant -iciv 0.1 A VCK»VCB0 -EB-1«5*

2 A VCH-VCHO -VBB-1.5V
T01250C
Bitter-HM* Cutoff Curront -iebo 1 a -veb»5? ic-o
Collector lurittor Saturation Voltage 'CB(»at; • O.33 °»6 V -IC-1.9A -IB-0.15A

1.* V -IC-4A -Ib-U
Baoo-Buittor Yoltago -be* 0.9 1.2 T -IC«1.5A -Vcb-CT
D.C. Curront Gain Hfj •

2N 6124, 2N 6129 29 100 -IC-1.9A -VCB-2V
2*6126 20 80 -IC-1.5A -VCB-8V
2N 6124, 2H 6129 Hyg * 10 -IC»*A -VcB^fV

2N 6126 7 -IC-4A -VCB"8V
Curront Gain-Bandwidth Product *f 2.9 Mb -IC-U -VCB-4V
Snail Signal Curront Gain bfo 29 -IC-O.U -Vc»«2V

f=lkH»
* Pulao Toot » Fulso Vidtli»0.3nS, Duty Cjrclo-ljt
ZH) to Ic
"Ma)
12.77.0870E
2N6129 2N6130 2N6131
THE 2N 6129, 2N 6130 AND 2N 6131 ABE NPN CASE TO-220B

SILICON EPITAXIAL BASE POWER THANSISTOBS
EBSIGNED FOR SWITCHING, DRIVES AND OOTPDI
STAGES IN AUDIO AMPLIFIERS. THE 2N 6129,
2N 6130, 2N 6131 ARE COMPLEMENTARY TO
2N 6132, 2N 6133, 2N 613% RESPECTIVELY.
BCE
Collector-Base Voltage 40V 60V 80V

'CBO
Collector-Emitter Voltage 40V 60V 80V
"cEO
'EBO
Collector Current 7A
Base Current 3A
*B
Total Power Dissipation (T <25°C) P sow
C tot
Junction Temperature T. 150°C
J
THERMAL RESISTANCE
Junction to Case 2.5°C/W
"jc
P vs 7 SAFE OPEJIATING AIU5A (».C.)

!>0
tot A
;| =
1=3II T
C
1 1
40
$*
30
YV
(•
k 16129-v.
V
'',
S|
0.3 --,2 H6130\
? 161310^
\
III
0.1*1—
100 200 3 10 30 100
T
A(°C)
YCE(V)
2N6129 2N6130 2N6131
ELECTRICAL CHARACTERISTICS (*A*25°C unless otherwise noted
PARAMETER SYMBOL MXN TXP MAX HOT TEST CONDITIONS

Collector-Boitter Breakdown Voltage
2N 6129
"W* 40 V
IC«0.1A Ib=0
2N 61)0 60 V
2N 6131 80 V
Collector-Base Cutoff Cnrrent JCBO 0.1 A VCB*=VCB0 lE»0
Collector-By. ter Cutoff Current ICEO 2 A VCB»*CE0 JB»0

Collectox*-Baitter Cutoff Current ICEV 2 mA VCE"VCE0 VBB-1.5V
Tc=125°C
Eaitter-Base Cutoff Current ISO 1 A Vebf5V Ic=0
Collector-Eaitter Saturation Voltage ViCE(sat) » IC=7A IB=3A

2N 6129, 2N 6130 1.4 V
2N 6131 2.0 V
Base-Bnitter Voltage Vbk » 0.95 2.0 V Ic=2.5A Vcb-*V
D.C. Current Gain *

All types mre 20 100 IC=2.5A VCE=4V
2N 6129, SN 6130 7 IC»7A VCE=4V
2N 6131 5 IC=7A VCE=4V
Current Gain-Bandwidth Product fT 2.5 MHs IC=1A VCE=4V
Small Signal Current Gain hfe 25 IC=O.U VCE=4V

f=lKHz
* Pulse Test t Pulse Vidth=0.3»S, Duty Cycle=l;t
BFE ts IC
"PI
*c U)
12.77.8500E
-
2N6132 2N6133 2N6134

THE 2N 6132, 2N 6133 AND ZN 6134 ABE PNP CASE TO-220B

DESIGNED FOB SWITCHING, DBIVBB AND OUTPUT
STAGES IN AUDIO AMPLIFIERS. THE 2N 6132,
2N 6133 AND 2N 6134 ABE COMPLEMENTARY TO
2N 6129, 2N 6130 AND 2N 6131 RESPECTIVELY.
ABSOLUTE MAXIMUM RATINGS 2H 6132 2N 6133 2N 6134
Collector-Base Voltage VcbO 40V 60V 80V
Base Current IB 3A
Total Power Dissipation (Tc$25°C) Ptot 50¥

THERMAL RESISTANCE
Junction to Case •jc 2.5°C/W
vs T.
SAFK OniRATING ARKA (l).f:.)
tot
50 10 -rd ===
Tc-? 00
"
J14V- S T
40
y
,*,
30 X\
^ *
= L— -J —
V - ±
> \
1 1 \
216132 1 '
0.3
2N6133 »
0.1*
100 200 10 30 100
*a(°c)
" TCE(V)
2N6132 2N6133 2N6134
BLBCTBICAL CHARACTERISTICS (TA425°C unless otherwise noted)
PARAMETER SYMBOL MDJ TIP MAX UNIT TBST CONDITIONS
Colleetor-Baitter Breakdown Voltage -UTcBO * -IC"0.U Ib-0

2N 6132 40 V
2N 6133 60 V
2N 6134 80 V
Colleetor-Base Cutoff Current -ICBO 0.5 A VCB-VCB0 lB»b
Collector-Adtter Cutoff Current -ICEO 2 uA VCB-VCEO IBM)
Collector-Enitter Cutoff Current -iciv 2 A VCB-VCE0-VKB-1.5V

Tc«125«C
sitter-Base Cutoff Current -IBBO 1 A -VEB-5V Ic-0
Collector-Quitter Saturation Voltage -VcB(sat) • -IC-7A -IB-3A

2N 6132, 2N 6133 1.4 V
2N 6134 1.8 V
Base-Bmitter Voltage *
-VBB 0.97 8 V -IC=2.5A -VcB«4V
D.C. Current Gain All types Hre 20 100 -IC-2.5A -VCB=4V
2N 6132, W
6133 7 -IC=7A -VCE-4V
2N 6134 5 -IC-7A -VCB-4V
Current Gain-Bandwidth Product fT 2.5 MB* -IC-U -VCB«4V
Small Signal Current Gain Of* 25 -IC*0.1A -VCB-4V

f.lKBs
* Pulse Test t Pulse Width=0.3nS, Duty Cycle*ljf
vs VCE(sat) V J
HPE Ic & BE ra C
P 0.8-
0.01
C (A)
12.77.0850E
CASE TO-92P X-67 HEAT SINK

THE 2N6218 THROUGH 2N6221 ARE NPN SILICON
PLANAR TRANSISTORS INTENDED TOR USE IN TV,
NIXIE-NEON TUBE AND OTHER GENERAL HIGH
VOLTAGE APPLICATIONS. THE DEVICES ARE
SUPPLIED IN CASE TO-92F WITH OPTIONAL X-67
HEAT SINK.
EXE
t
Srnm
1...
CEB
ABSOLUTE MAXIMUM RATINGS 2N6216 2N6219 2N622Q 2H6221

Collector-Base Voltage VcbO 300V 250V 200V 150V
Collector-Emitter Voltage VCSO 300V 250V 200V 150V
Emitter-Base Voltage VebO 5V 5V 5V 5V
Collector Peak Current ICK 100mA
Total Power Dissipation • Tc«25°C P-tot 1.5W
With X-67 Heat Sink © TA £25°C 800mW
No Heat Sink © TA £25°C 625mW »
** 0.5W in JEDEC registration.
ptot TA "PE vs *C
vs
2.0 200
Hill
160
1.5
r t!"ft
120
tot Hpg
00 1.0
With*
%^
w 80
U''
~c*vl ^
0.5
K*$m£
•<
40
|T \-? 5°C._.
il
4 y
50
1*"*^
100 150 200 0.1
Pilis • Test
1 10
M
jjjj]
100 1000
*A (°C) JC (bA)
ELECTRICAL CHARACTERISTICS (TA«25°C unless otherwise 10 ted)

Collector-Base Breakdown Voltage BVCBO Note 1 V IC-O.lmA lB-0
c ollector-Eaitter Breakdown Voltage Note 1 V IC-10«A lB-0

LVcbO
(Pulsed)
Emitter-Base Breakdown Voltage BVebo 5 V lB-0.1mA ic-o

2N6218 0.5 VCB-250V lE-0
2N6219 1 VCB-200V IE-O
2N6220 1 VCB-150V IE-O
2N6221 1 VCB-IOOV lE-0
Collector-Emitter Saturation Voltage vCE(sat)

2H6218.9 1 V IC-10mA XB-laA
2N6220.1 2 V IC-20mA IB-2BA
Base-Emitter Saturation Voltage vBE(sat)

2N6218.9 0.6 0.75 V IC-10mA lB-l«A
2N6220.1 0.65 0.85 V IC-20mA lB-2mA
Base-Emitter Voltage VBE 0.55 0.75 V IC-20mA VCE-lOV
D.C. Current Gain HFE 10 IC-2mA VCE-lOV
20 IC-20mA VCB-lOV
Current Gain-Bandwidth Product fT 50 MHz IC-10mA VCE-lOV
Collector-Base Capacitance Ccb 5 pP VCB-lOV lE-0

f-lMHz
Emitter-Base Capacitance Cefc 70 PP Veb-0.5V ic-o

f-lMHz
Small Signal Current Gain nfe 20 500 IC-20mA VCE-lOV

f-lkHs
Note 1 « equal to the values of vCB0 & Vceo ratings.
*T v» *C sat) * VCE(sat) vs I C
100
CB-10T
1 III
80
. 60
VOLT
\
(Mm)
TA-?5°C j
llll
10 100 100
IC(«A)
2.78.7300B
2N6288 2N6290 2N6292
THE 2N 6288, 2N 6290 AND 2N 6292 ABB NPN CASE TO-220B

SILICON EPITAXIAL BASE POWER TBANSISTOBS
DESIGNED FOR SWITCHING, DRIVES AND OUTPUT
STACKS IK AUDIO AMPLIFIERS. THE 2N 6288,
2N 6290, 2N 6292 ABB COMPLEMENTARY TO
2N 6111, 2N 6109, 2N 6107 RESPECTIVELY.
BCE

Collector-Base Voltage VCB0 40V 60V 80V
Collector-Emitter Voltage 30V 50V 70V
"ceo
Enitter-Base Voltage VEB0 5V
Collector Current X 7A
C
Base Current
h 3A
Total Power Dissipation P
9 TC«25°C tot
WW
© T <25°C
A 1.8V
Junction Temperature T 150°C
j
Storage Temperature Bangs Istg -55 to + 150°C
THERMAL RESISTANCE
Junction to Case V. 5.12°C/W
SAFE OFEilATING AREA (D.C.) \E NORMALIZED » I„
10
— r„-25°c!
c , ;:iipw
V[ IV 250
Pulse Test
\^
\
N
—1 Jl X
0.3 -2N62
.2H62 90-——.-.
>H62 92—
0.1
1—
'
Mil 1.
:
1
10 30 100 0.01 0.1 10
TCE(V)
l
C (A)
2N6288 2N6290 2N6292
ELECTBICaL CHARACTERISTICS ('ArtS^C unless otherwise noted )
PARAMBTsB SYMBOL MW TYP MAX UNIT TEST C0MDITI0NS

Collector-bitter Breakdown Voltage WCEO* IC-0.U IB-O
2N 6288 30 V
2N 6290 50 V
2N 6292 70 V
Collector-Emitter Breakdown Voltage Wcbb* IC-O.IA BBB.100A
2N 6288 40 V
2N 6290 60 V .
2N 6292 80 V
Collector-bitter Cutoff Current ICEO
2N 6288 1 A Vcb«20V Ib*0
2N 6290 1 mA VCB-40V Ib-0
2N 6292 1 nA VC»»60V IB«0
Col lector-ad tter Cutoff Current ICEB.
2N 6288 0.1 A VCW35V Bbb-IOOA
2N 6290 0.1 A Vce>55V BBE-100A
2N 6292 0.1 A VCE-75V BBE-100A
2N 6288 2 A VCE-30V Bbb-IOOA
Tc=150oC
2N 6290 2 A VcE=50V BfiE-lOOft
Tc«1500C
2N 6292 2 A VCB=70V BbEbIOOA
TC=150°C
Collector-Baitter Cutoff Current J CEV
2N 6288 0.1 A VCB=37.5V VEB-1.5V
2N 6290 0.1 mA VCB»56V VBB-1.5V
2N 6292 0.1 mA VCE=75V VEB-1.5V
2N 6288 2 mA VCE=30V VEB-1.5V
TC=150«C
2N 6290 2 mA VCB=50V VBB-1.5V
Tc=150°€
2N 6292 2 mA VCE=70V VBB-1.5V
TC«150«>C
Emitter-Base Cutoff Current l£B0 1 mA VBB-5V Ic-0

Collector-Baitter Saturation Voltage VcE(sat )*
2N 6288 0.3 ^> 1 V IC-3A IB=0.3A
2N 6290 0.3 1 V IC"2.5A IB-0.25A
2N 6292 0.3 1 V l£«2A lB=0.2A
All types 3,5 V IC-7A IB-3A
Base-fritter Voltage 2N 6288 VBE * 1 1.5 V IC-3A Vce=4V
2N 6290 0.95 1.5 V I C =2.5A VCE-4V
2N 6292 0.9 1.5 V IC*4A VCB-4V
All types 3 V IC=7A Vce»4V
D.C. Current Gain 2N 6288 HPE » 30 150 IC»3A VCE-4V
2N 6290 30 150 IC=2.5A VCE-4V
2N 6292 30 150 IC=2A VCE*4V
All types 2.3 IC-7A Vce«4V
Current Gain-Bandwidth Product fT 4 MHs IC=0.5A VCB-4V
Collector-Base Capacitance Cob 230 pF VCB-IOV IB-0 f-lMHz
Snail Signal Current Gain bfe 20 IC=0.5A VCP-4V f-50KHs
*fulse Test « False Vidth-O.jSmS, Duty Cycle=ljt

12.77.8500E
1
2N6473 2N6474 2N6475 2N6476

COMPLEMENTARY
THE 2K6473. 2N6474 (NPN) AND 2N6475 2N6476 CASE TO-220B

(PNP) ARE COMPLEMENTARY SILICON EPITAXIAL
BASE POWER TRANSISTORS DESIGN FOR SWITCHING,
DRIVER AND OUTPUT STAGES IN AUDIO AMPLIFIERS.
THEY FEATURE HIGH COLLECTOR-EMITTER BREAK-
DOWN VOLTAGE.
2N6473(NPN) 2N6474(NPN)
ABSOLUTE MAXIMUM RATINGS f„ ,.,«.». **».*.„. 2N6475CPNP) 2N6476(PNP)
Collector-Base Voltage VCBO 110V UOV
Collector-Emitter Voltage (RBE ^lOQTl) VCER 110V 130V
Collector-Emitter Voltage (IB-O) VCEO IOOV 120V
Collector Current IC 4A 4A
Total Power Dissipation (Tc 4250c) Ptot 40W 40W
(TA 425°C) 1.8W 1.8W
Operating Junction & Storage Temperature Tj. T 8 tg -55 to 150°C
THERMAL RESISTANCE
Junction to Ambient J 70OC/W max.
ja
Ptot vs TA
SAFE OPERATING AREA (DC)
80
Tq- 25°C
60
Ptot
(W) 40 (A)
s$
s&
fttl
20 ^^
*k*<&
K 0.1
... -p£- >N6 474 ."::;
0.05 1
L_ 1
50 100 150 200 10 100 1000

T A (°C)
VCE (V)
2N6473 2N6474 2N6475 2N6476

2N6473(NPN) 2N6474(KPN)
PARAMETER SYMBOL 2N6475(PNP) 2N6476(PNP) UNIT TEST CONDITIONS
MIN MAX MIS MAX
Collector-Emitter Breakdown LVcER* 110 130 V IC-0.1A RBE-10QQ

Voltage
Collector-Emitter Breakdown LVCEO* 100 120 V I(J-0.1A lB-0

Voltage
Collector Cutoff Current ICER 0.1 mA VCE-100V RBE-lOOn

0.1 uA VCE-120V RBE-lOOn
Collector Cutoff Current ICER 2 mA VCE-100V RBE-100a
(Tc-lOC-oc)
2 mA VCE-120V HBE-IOOa
Collector Cutoff Current ICEV 0.1 mA VCE-100V VEB-1.5V
0.1 mA VCE-120V VEB-L5V
Collector Cutoff Current ICEV 2 mA VCE-100V VEB-1.5V
(Tc-lOOoc) 2 mA VCE-120V VEB-1.5V
Collector Cutoff Current ICEO 1 mA VCE-50V IB-O
1 mA VCE-60V Ib-0
Emitter Cutoff Current IEBO 1 1 mA VEB-5V Ic-0
Collector-Emitter Saturation VCE(sat)* 1.2 1.2 V IC-1.5A IB-0.15A
Voltage 2.5 2.5 V IC-4A IB-2A
Base-Emitter Voltage Vbe* 2 2 V IC-1.5A VCE-4V
3.5 3.5 V IC-4A VCE-2.5V
D.C. Current Gain HpE 15 150 15 150 IC-1.5A VQE-4V
2 2 IC-4A VCE-2.5V
Current Gain-Bandwidth Product fr IC-0.5A VCE-4V
2N6473f4 only 4 4 MHz
2N6475.6 only 10 10 MHz
Collector-Base Capacitance Cob 250 250 PF VCB-10V I E -0 f-lMHz
Small Signal Current Gain hfe 20 20 IC-0.5A VCE-4V
f-50KHz
* Pulse Test t Pulse Width-0.3mS, Duty Cycle-1$
TKE (NORMAL IZED ) vs IC vbe 4 VcE(sa1 ) vs ic

1.6 1.6
] >ul8e Test |
Pulse Test
II lllllll
VCE-4Y 1 ^ A- o°c
§1.2 TA-9^0ri 1.2
^. II
HI
lllll VOLT vbe
I 0.8 0.8
g i
—
P0.4
— 2N6475.6
\ lllll 0.4
VcE(sat) 6
IC-10I1
N64 73,4
lllll
0.01 0.1 1 0.1 1 10

JC IC (A)
(A)
2.78.8500P.0850P
2SA473 2SC1173
PNP NPN SILICON PLANAR EPITAXIAL POWER TRANSISTORS
THE 2SA 473 (POT) AND 2SC 1175 (NPN) ARE CASE TO-220B
SILICON PLANAR EPITAXIAL COMPLEMENTARY
PAIR SPECIALLY DESIGNED FOR 5-WATT AUDIO
AMPLIFIER OUTPUT APPLICATIONS. THEY ARE
ALSO SUITABLE FOR SWITCHING UP TO JA
COLLECTOR CURRENT.
BCE
ABSOLUTE MAXIMtM RATINGS

Collector-Base Voltage 30V

'CEO
Collector Current 3A
Collector Peak Current (t lOmS) 6a

Total Power Dissipation (T *25°C) P 10V
C tot
Junction Temperature T. 150°C
3
Storage Temperature Range Tstg -55 to + 150°C
ELECTRICAL CHARACTERISTICS (T ^25°C unless otherwise noted)

A
PARAMETER SYMBOL MDf TYP MAX UNIT TEST CONDITIONS
Collector-Base Breakdown Voltage 30 V Ig-O.lmA
hr°
^CBO
Collector-Emitter Breakdown
Voltage
LV
CE0 '
30 V I
c
«10mA
V°
Collector Cutoff Current ^BO 1.0 M Vcb"* 07 V°
Emitter Cutoff Current TBO 1.0 M Veb-57 I =0
c
Collector-Emitter Saturation VCE(sat) • 0.8 V I «2A
C
I3-0.2A
Voltage
Base-bitter Voltage VBE * 1.0 V IC-°-5A
V**
D.C. Current Gain (Note)
^ 1 *
40
25
400 I -0.5A
C
IC-2.5A
V**
VCE^
%E2 *
*T
100 MHz I «0.1A
C V*
« Pulse Test i Pulse Width-0.3mS, Duty Cycle-1^
Note s Hje ia classified as follows. Group R i 40-80 Group i 70-140

Group Y t 120-240 Group G 1 200-400
2SA473 2SC1173
TYPICAL CHABACTBRISTICS
(
P. . TS T. SAFE OPEJIATING AREA (i).C.)

tot A
25 10
I
c
*5t l|
20
L
£,
15
10
fe
&
>L 0.3
5
i*fc-
lJ»j
$r
» 0.1
100 200 1 3 10 30 100
t
a(°c)
TCE(V)
160 HFE Vf• ic

YCE(»rt) ft
Y
BK * *C
v CE-2V
1,6I— -— 2SM75
140 — llllll
2$ p.
-
Hill
Pulsi 1 Test
120 2£1*47
HpE 100
-f
80 1
60
1
40 1
20
1 mil
0.01 0.1 10
J
C (A)
12.77-0810C.8100C
2SA489 2SB604 2SB596
CASE T0-22OB
THE 2SA489t 2SB604, 2SB596 ARK PNP
DESIGNED TOR 20 TO 25W AUDIO AMPLIFIER
OUTPUTS AND SWITCHING APPLICATIONS UP TO
4A COLLECTOR CURRENT. THE 2SA489. 2SB604
AND 2SB596 ARE COMPLEMENTARY TO 2SC789,
2SD570 AND 2SD526 RESPECTIVELY.
BCE
ABSOLUTE MAXIMUM RATINGS 2SA489 2SB604 2SB596
Collector-Base Voltage -^CBO 70V 70V 80V

Collector-Emitter Voltage -VcEO 60V 70V 80V
Emitter-Base Voltage ~ vEB0 5V
Collector Current — Iq 4A
Collector Peak Current (t £10mS) -ICM 8A
Total Power Dissipation (Tc<25°C) rtot 30V
Junction Temperature Tj 1500C
Storage Temperature Range ^stg -55 to +150°C
THERMAL RESISTANCE
Junction to Case »jc 4.17°C/W
P TS T SAFE OPERATING AREA (l).C.)

tot A
10 = TC -25 oC
50
1
40
^ 30
20
kfe
;$ 0.3
t* t 2S>148 9 --
10
2SI560 4 --
k 0.1*
f
1
2SIJ59 6 --
100 200 3 10 30 100

t
a(°c)
2SA489 2SB604 2SB596
T A-25°C unless otherwise noted
PARAMETER SYMBOL MIW TYP MAX UNIT TEST CONDITICMS
Collector-Base Breakdown Voltage BVcBO -IC-O.lmA Ig-0
284489 70 V
2SB604 70 V
2SB596 80 V
Collector-Emitter Breakdown Voltage -LVcEO * -IC-100mA I B -0

2SA489 60 V
2SB604 70 V
2SB596 80 V
Collector Cutoff -Current ^CBO

2SA489 30 ^ -vCB-50v Ie-o
IE-O
2SB604 30 J* -VCB-50V
2SB596 30 p* -VCB-80V IE-O
Emitter Cutoff Current Iebo 100 UA -VEB-5V I C -0
Collector-Emitter Saturation vCE(sat)

' * 0.4 1.5 V -I C -3A -IB-0-3A
Voltage
Base-Emitter Voltage VBE *

2SA489 1.0 1.5 V -I C -2.5A -VC E-5V
2SB604 1.07 1.5 V -IC-3A -VCE -5V
2SB596 1.07 1.5 V -I C -3A -VC E-5V
D.C. Current Gain (note) HpE 1 * 40 240 -IC-0.5A -VCE-5V
HpE 2 * 15 -IC-3A -VCE-5V
Current Gain-Bandwidth Product fT 3 MHz -I C =0.5A -VC E-5V
* Pulse Test : Pulse Width-O.JmS, Duty Cycle-1^

note s Hê x i8 classified as follows. Group R « 40- 80 Group » 70-140
Group Y t 120- 240
HpE v» Ic
VCB(sat) ft
TBE • I
C
1.6 T A-25°C
IJIH
1
1.4
1.2 1 urn
l.U II
1
llll
S \\\l
VB 1
0.H e -vc•E-5V,
0.6
11
0.4
O.i
Vf
©
lat) 11
s-ioIb mil
0.01 0.1 1 10
C (A) -*cU)
12. 77.08 50E
2SA490 2SC790
PNP NPN SILICON EPITAXIAL BASE POWER TRANSISTORS
CASE T0-220B
THE 2SA490 (PNP) AND 2SC790 (NPN) ARE
SILICON EPITAXIAL BASE COMPLEMENTARY
PAIR SPECIALLY DESIGNED TOR 10-VATT
AUDIO AMPLIFIER OUTPUT APPLICATIONS.
THEY ARE ALSO SUITABLE TOR SWITCHING
UP TO 3A COLLECTOR CURRENT.
BCE
ABSOLUTE MAXIMUM RATINGS '-•*•«—
Collector-Barf* Voltage *CBO 50V

Emitter-Base Voltage VgBO 5V
Collector Peak Current (t £10mS) ICM 6A
Total Power Dissipation (T&J25°C) *tot 25V
Junction Temperature *J 150°C

PARAMETER SYMBOL TIN TYP MAX UNIT TEST CONDITIONS
Collector-Base Breakdown Voltage BVcBO 50 V IC-O.lmA Ie-0
Collector-Bnitter Breakdown Voltage LVcbo» 40 V IC-50mA Ib-0

Collector Cutoff Current ICBO 20 ^ Vcb-30V Ig-O
Emitter Cutoff Current lEBO 100 MA VEB-5V Ic-O
Collector-Emitter Saturation VCE(sat)» 0.4 1.4 V I C -2A I1-0.2A
Voltage
Base-Emitter Voltage VBE * 1.0 1.8 V IC-2A VCE-2V

D.C. Current Gain (note) H?E 1» 40 240 IC-0.5A VCE-2V
HfS 2 « 15 IC-2A VQE-2V
Current Cain-Bandwidth Product fT 3 MHz IC-0.5A VCB-2V

Note i H>g i is classified as follows « Group R i 40-80 Group : 70-140
Group Y » 120-240
—
2SA490 2SC790
(
ptot t» TA SAFK OPERATING ABBA (D.C

10
50 fk
V25° 7
40
^ b
I \
V
*"
— '
<m
30
* 1
s \— 1
e
•*
PL.
on
20 fc
I.
1
_v
\ f
ft sA 0.3
10
k& IS/. -
10
'A (°c
20
0.1
13 *CE
1
10
(V)
30
1
100
Hyg *s Ic VcE(sat) & VBS ts IC

1.6 nun i iurn
1.4 "IT Pulse Test
X.2 ill
J
VBB
1.0
#V
0.8 «*J
0.6
-
VCE(s*** -J
0.4
0.2
• v ] L0I
B |
0.01 0.1 10
^ (A)
12.77.O87OE.870OE
2SA539 2SC815
COMPLEMENTARY SILICON GENERAL PURPOSE AF AMPLIFIERS
THE 2SA539 (PNP) ARE 2SC815 (NPN) ARE SILICON CASE TO-92B
AMPLIFIERS AND DRIVERS, AS WELL AS FOR UNIVERSAL
BCB
ABSOLUTE MAXIMUM RATINGS F. m *«i<<iiM»
Collector Peak Current 1 CK 500mA
Total Power Dissipation (Ta425°C)
Ptot 250mW
derate 2.5mW/°C above 25°C
Operating Junction & Storage Temperature Tj, T st g -55 to 125°C
ELECTRICAL CHARACTERISTICS (Ta-25°C unleas otherwise noted )

Collector-Emitter Breakdown Voltage LVCEO* 45 V IC-10mA IB-O
Collector Cutoff Current ICBO 0.1 ^ VCB-45V IE-O
Emitter Cutoff Current lEBO 0.1 uA VEB-3V IC-0
Collector-Emitter Saturation Voltage VCE(sat)<> 0.18 0.5 V IC-150mA lB-15mA
Base-Emitter Saturation Voltage VBE(sat)<t 0.88 -1.2 V IC-150mA lB-15mA
Base-Emitter Voltage VBE 0.6 0.68 0.9 V IC-lOmA VCE-10V
D.C. Current Gain (Note 1) HFE 1 * 50 120 232 IC-50mA Vce-IV
HFE 2 * 50 100 IC-150mA VCE-2V
Current Gain-Bandwidth Product fT 100 160 MHz IC-lOmA Vce-IOV
Collector-Base Capacitance Cob
2SC815 4.5 8 PF VcB-lOV Ib-0
2SA539 5-5 PF f-lMHz
* Pulse Test 1 Pulse Width-0.3mS, Duty Cycle-1$
Note 1 1 HFE 1 is classified as follows.
Group M 1 50-94 Group L « 80-1 50 Group K 1 125-232

2SA539 2SC815
Ptot ITS ta HpE V8 ic

250
1 Pulse Test
VCB-1V
200
300
Ptot
(mW) HFE 150
200
100
100
50 y
50 100 150 200 100 1000

T* (°C) IC (mA)
fT vs Ic
& VCBfaat) vs Ic
200
VCE-10V
160 ::::: /r:: v""I

_..., .... A
^ -1
fT 1*0 -/ —
— I
(MHz)
80
i
_X ....
—I1
ml
40
H
10 100 1000
n
1000
IC (mA) IC (mA)
2.78.0650B.6500B
2SA564 2SA564A 2SC828 2SC828A
THE 2SA564, 2SA564A (PNP) AND 2SC828, 2SC828A CASE TO-92B

(NPN) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL
TRANSISTORS TOR USE IN AF SMALL SIGNAL AMPLIFIER
STAGES AND DIRECT COUPLED CIRCUITS.
ECB

ABSOLUTE MAXIMUM RATINGS 2SA564 2SA564A 2SC828 2SC828A
Collector Peak Current ICM 100mA
Total Power Dissipation (Ta£25°C) Ptot 250mW
derate 2.5mW/oc above 25°C
Operating Junction & Storage Temperature Tj. T 8t g -55 to 125°C

Collector-Base Breakdown Voltage BVCBO Note 1 V IC-O.OlmA IE-O
Emitter-Base Breakdown Voltage bvebo 5 V lE-0.01mA IC"0

Collector Cutoff Current ICEO 10 uA Vce-VCEO IB-O
Collector Cutoff Current ICBO 1 uA VCB-10V IE-O
Collector-Emitter Saturation Voltage VCE(sat) 0.15 0.4 V IC-50mA IB-5mA

D.C. Current Gain (Note 2) HPE 65 300 700 IC-2mA VCE-5V
Current Gain-Bandwidth Product fT 150 MHz lC-2mA VCE-10V
Collector-Base Capacitance Cob VCB-10V IE-O
2SA564, 2SA564A 3.2 pF f-lMHz
2SC828, 2SC828A 2.5 PF
Noise Figure NF 2 dB IC-0.2MA VCE-5V
RG-2KA f-lkHz
Note 1 i equal to the value of VcBO rating.

Note 2 t RFE is classified as follows.
Group i 65-130 Group P 1 90-180 Group Q 1 130-260
Group R « 180-360 Group S 1 260-520 Group T 1 360-700
2SA564 2SA564A 2SC828 2SC828A
TYPICAL CHARACTERISTICS (T A-25°C UNLESS OTHERWISE SPECIFIED)
O.C CURRENT GAIN CURRENT GAIN - BANDWIDTH PRODUCT

iiiiii i mi *T I!
«FE Pulse Teat

v JE-5V
III
'CE" 10 /
— -B I '*"S
200 -' „
- -•' ,.
100
**
1 1 10
IC <mA) l
C (mA)
COLLECTOR CUTOFF CURRENT h-PARAMETERS (NORMALIZED)

VS AMBIENT TEMPERATURE VS COLLECTOR CURRENT *
200
100
V CE -6\/
InA) hi > f-IKHz
he<N) >
•»
re
10 Vq -iuv
l
E -0
= h f»
1 v>'
I
*w
0.1
80 120
TA (°C) l
C (mA)
V BE AND vCE(at)
VS COLLECTOR CURRENT
Pu: se Test
'Typical valiwt at
(V)
l
c-2mA VCE-BV
1.2
1.0 H FE (D.a> 300

VBE
h ie (1KHz) 4.5Kohm>
"" • »CE"»V
"
hfe(IKHz) 330
0" 4
h re (1KHi) 2x1
0.4
v a:(««) h^TKHz) 30pmhos
C-10 B l
|-j lltt
1 10
IC <mA)
2.78.0430B.430OB
2SA666 2SC644
COMPLEMENTARY
THE 2SA666 (PNP) AM) 2SC644 (NPN) ARE CASE TO-92B

TRANSISTORS TOR AF LOW NOISE PREAMPLIFIER
APPLICATIONS.
ECB
ABSOLUTE MAXIMUM RATINGS f«i«h> <**«.«*•*«* a.m*~tum ..«*«.. 2SA666(PNP) 2SC644(BPN)

Col lee tor -Base Voltage VcBO 25V 30V
Emitter-Base Voltage VgBO 5V 5V
Collector Current Iq 50mA
T A^25°C) Ptot 250mW
derate 2.5mW/°.C above 25°C

PARAMETER SYMBOL .'MIN TYP MAX UNIT TEST CONDITIONS
Collector-Base Breakdown Voltage BVCBO IC-O.OlmA lE«0
2SA666 25 V
2SC644 30 V
Emitter-Base Breakdown Voltage BVEBO 5 V lE-0.01mA
ic-o
Collector Cutoff Current ICEO 10 uA VCE-25V IB-O
Collector Cutoff Current ICBO 1 uA VCB-10V IE-O
Collector-Emitter Saturation Voltage YCE(sat) 0.15 0.4 V IC-50mA lB-5mA
D.C. Current Gain (Note 1) Hje 130 300 700 IC-2mA VCE-5V
2SA666 only 16 dB (RG-50KXI f-lOOHz)
2SC644 only 5 dB (RG-2KA f-100Hz)
s 2SC644 only 3 dB (RG-2KA f-lkHz)
Note 1 i HpE is classified as follows.
GROUP Q t 130-260 GROUP R « 180-360 GROUP S « 260-520 GROUP T « 360-700

.
2SA666 2SC644
CURRENT GAIN
mir i mi *T
HFE 1 >ul8e Test.
(MHz) Ill
V(^-6V
p 'CE" 10V..
400
0.01 0.1 1 10 1 10
C (mA) l
C (">A)
COLLECTOR CUTOFF CURRENT

V BE AND v CE(sat)
VS AMBIENT TEMPERATURE
200 VS COLLECTOR CURRENT
100 Pulaii Test
(V)
'CBO
1
InA)
10
vB E
l
E -0 ... .0 v E-5V
C
v C E(sat)
i
... 9 I
hHH+I
40 80 120 160 1 10
TA (°C)
l
c (mA)

Cob V CE -6V "1
(pF)
(dB)
INI
-500J
Hz'-
r-0 RG L
6 3
"
f-1MHz
^ 5/166 6 R 3- K«-
X>C64, RG -
H (;-WW.
"
'g"»)Kft
4 6 100 1000
V CB l
C (fA)
(V)
2.78.0450B/4500B
2SA671 2SC1061
THE 2SA671 (PHP) AND 2SC1061 (NT*) ARE

CASE T0-22OB
SILICON EPITAXIAL BASE COMPLEMENTARY
PAIR SPECIALLY DESIGNED FOR 15-VATT AUDIO
AMPLIFIER OUTPUT APPLICATIONS. THEY ARE
ALSO SUITABLE TOR SWITCHING UP TO 3A
COLLECTOR CURRENT.
ABSOLUTE MAXIMUM RATINGS f-w*—.-

Collector Peak Current (t<10*S) ICM 6A
Total Power Dissipation (*C 425<>c) Ptot 25W
Junction Temperature TJ 150°C
Storage Teaperature Range Tstg -55 to +150°C

Collector-Base Breakdown Voltage OTCBO 50 V IC-O.lmA Ie-0
Collector-Emitter Breakdown Voltage LVcEO * 50 V I c -50mA Ib-0
Collector Cutoff Current ICBO 100 VCB-50V IE-0
J*
Emitter Cutoff Current lEBO 100 >* VEB-4V Ic-0
Collector-Emitter Saturation VcE(sat)* 0.35 1 V IC-2A IB-0.2A
Voltage
Base-Emitter Voltage VBE * 0.83 1.5 V IC-1A VCE-4V

D.C. Current Gain (Note) Hyg 1 * 35 320 IC-1A VCE-4V
HPE 2 » 35 IC-0.1A Vce^V
• Pulse Test • Pulse WLdth-O.JmS, Duty Cycle-ljf

Note i Hyg 1 is classified as follows. Group A i 35-70 Group B i 60-120
Group C i 100-200 Group D i 160-320
2SA671 2SC1061
p TS T SAFE OPEilATING AREA (l).C.)

tet A
10
50T
»c
40
30
„
^& >»
is* *
XL?i 0.3|
100
t
^ 200
0.1
Y«(v)
10 30 100
a(°c)
TCE(s«i) ft
VBE * J
C
0.01
h (a)
12*77. O870E.870OE
2SA719, 720 730, 731 2SC1317, 1318, 1346, 1347
CASE T0-92B WITH X-67 HEAT SINK

THE ABOVE TYPES ABE COMPLEMENTARY SILICON
PIAHAB EPITAXIAL TRANSISTORS FOB AF MEDIUM
POWER AMPLIFIEK ft SWITCHING APPLICATIONS.
THE 2SA719, 2SC1317 ABE SPECIALLY RECOM-
MENDED FOB 1W OIL OUTPUT STAGE.
2SA719.720 2SA730.731
2SC1317.1318 2SC1346,1347
(PNP) 2SA719 2SA720 2SA730 2SA731

ABSOLUTE MAXIMUM RATINGS (NPN) 2SC1317 2SC1318 2SC1348 2SC1347
Collector-Better Voltage VCEO 2SV 50V 25V 50V
Collector Current IC 0.5A 0.5A 0.5A 0.5A
Collector Peak Current ICM 1A 1A 1A 1A
Total Power Dissipation (*A*£25«C) Hot 0.4W 0.4W 0.6W 0.6W
Operating Junction ft Storage Temperature Tj, Tstg -65 to 125*C
ELECTRICAL CHABACTERISTICS (
TAx25»C for»«»»dwic«.»o<mt»i«c— Hm ilyif iwiww..
)
2SA TYPES 2SC TYPES

Collector-Base Breakdown BVCBO IC=0.01aA IjÔ
Voltage
Collector-Skitter Breakdown LVCEO* Notel Note 1 IC=10aA IB=0
Voltage
E^tter-Base Breakdown BVEBO 1 IE*0.01bA I&.0
Voltage
Collector Cutoff Current ICB0 0.1 0.1 VCB=20V l£=0
Collector-Emitter Saturation VCE(sat)* 0.25 0.6 0.25 0.6 IC=500sA IB*50*A
Voltage
Base-Baitter Saturation VBE(sat)
;)* 0.93 1.6 IC*500aA lB*50aA
Voltage
D.C. Current Gain (Mote 2) HFE 1 * 60 180 340 60 180 340 IC=150«A VCE=10V
BFE 2 * 40 40 IC=500mA VCE=10V
Current Gain -Bandwidth fT 160 200 MHz I(>50aA VCE=10V
Product
Output Capacitance Cob 12 15 8 15 pP Vcb=10V lExO
f=!MHa
Note 1 equal to the ralues of absolute maximum ratings.
:
Note 2 : HFE
1 is classified as follows : Group P t 60-120 Group Q : 85-170
Group R t 120-240 Group S : 170-340
• Pulse Test s Pulse width=0.3mS, Duty Cycle=l*
2SA719, 720 730, 731 2SC1317, 1318, 1346, 1347
(Ta-25°C unleaa otherwise noted)
VfiE * V CE (. at ) y8 ic
p tot v« TA l.S
1.0
1. 2SA719,72C
2SC1317,1318
0.8
2. 2SA730.731
r
tott 2! *il M« ,13147
0.6
00
0.4
V
0.2
,
k.
100 100 1000
TA (oc) IC (-A)
HFE re XC
ic
't v»
200
150
nFE
100
1000 10 100 1000

!C («A)
3.78.0830A.3300A
2SA816 2SC1626
PNP NPN SILICON PLANAR EPITAXIAL POWER TRANSISTORS
CASE TO-220B
THE 2SA816 (PNP) AND 2SC1626 (NPN) ARE
SILICON PLANAR EPITAXIAL COMPLEMENTARY
PAIR SPECIALLY DESIGNED FOR THE DRIVER
STAGES OF 30-50W HI-FI AMPLIFIERS. THEY
ARE ALSO SUITABLE FOR MEDIUM SPEED
SWITCHING UP TO 2A PEAK CURRENT.
BCE
ABSOLUTE MAXIMUM RATINGS •—•—•-

Collector-Baa* Voltage CBO 80V
Collector Peak Current (t $lCoS) ICM 2A
Total Power Dissipation © Tc * 25°C Ptot 1CV
« TA< 25°C 1.5W
ELECTRICAL CHARACTERISTICS ( TA-25°C unless otherwise noted]

Collector-Base Breakdown Voltage BVCBO 80 V IC-O.lmA IB-O
Collector-Quitter Breakdown Voltage tVCEO * 80 V IC-10mA IB-O
Collector Cutoff Current ICBO 0.5 J* VCB-30V IE-O
Emitter Cutoff Current IEBO 1 uA Veb-5V IC-0

Collector-Emitter Saturation VCE(sat) « 0.5 V IC-500mA lB-50mA
Voltage
Base-Emitter Voltage VBE * 1 V lC-500mA VCE-2V
D.C. Current Cain (Note) HFE 1 * 70 240 IC-15CsU VCE-2V

HpE 2 * 40 IC-500mA VCE-2V
Current Gain-Bandwidth Product fT 50 100 MHa IC-150mA VCE-2V
Collector-Base Capacitance 2SA816 Cob 20 PF VCB-lOV Ib-O
2SC1626 13 P? f-lMH.
•Pulse Test t Pulse Width-O.JaS, Duty Cycl*-l£
70-140, Group T t 120-240
TH>te 1 Hrt 1 is classified as follows. Croup
.
2SA816 2SC1626
(*A-25°C ualoaa othorviso noted)
P v» T SAFE 0FERA1riNC ARi 5A (l).C.

tot A
1.0
• ilfcKziz^ +
I
•K
\> -j r !\
U P if
1
m
0.5 1
\\ \
V*
!
V? U 0.1 p fjl \^Q; \ l-

I
V V*
|
i
|
' k^>
V5 1' ^^ . ll
_ tl
^gnoul
V 0.03 1
>JI
L*«*U\
hi£?£
o.o:j ' '
" II " " '«
100 200 1 3 10 30 100
t
a(°c) 'CB(V)
Hra
VCE(»fct) TBE *» h
re *C ft
i6or
*C U)
12.77.081OB.81OOB
2SA817 2SC1627
COMPLEMENTARY SILICON AF LARGE SIGNAL TRANSISTORS
CASE T0-92B
THE 2SA817 (PNP) AND 2SC1627 (NIK) ABE
SILICON PLANAB EPITAXIAL TRANSISTORS
DESIGNED FOR AF IABSE SIGNAL AMPLIFIERS.
THEY ABE SPECIALLY SUITED FOR THE DRIVER
STAGES CF 30W AMPLIFIERS.
ABBODBTB MAXIMUI RATINGS *• «*—.—* -«"->

Collector-Bsitter Voltage VCEO 80V
Fitter-Base Voltage VEBO 5V

Total Power Dissipation (Tc<26»C) Ptot 1.3W
(TA «26»C) 0.6W
TA*25°C)

Collector-Baitter Breakdown Voltage LVCEO * 80 V ICb5bA IbsO
Collector Cutoff Current ICBO 0.1 Vc»:50V IEsO

J*
Eaitter Cutoff Current IEBO 0.1 J* VeB=5V I C sO
Collector-Baitter Saturation Voltage VCE(sat)* 0.15 0.4 V IC=200nA lB=20nA
Base-Enitter Voltage VBE * 0.55 0.65 0.8 V IC*5aA Vce*2V
D.C. Current Gain (Note) BFE 1 » 70 240 IC=50«A VCE=2V

BpB 2 * 40 lC*200aA VCE=2V
Current Gain-Bandwidth Product fT 100 MHb IClftaA VCE*10V
Output Capacitance Cob

2SA817 17 I* VCBbIOV l£=0
f.llffls
2SC1627 10 I* VCB-10V IB=0

felMHz
• Pulse Test I Pulse Width-O.aaS, Duty Cyclesljf
Note t BpE i is classified as follows.
GROUP s 70-140 GROUP Y I 120-240
'
2SA817 2SC1627

(
1
tot
n T
A SAFE OPERATING AREA
2.0 1000 i
&^
r v4L
~ 100
} >?
1,2
$rfc
s™"'
-^>^-
fe M°
10
^ te„
4 Mfa^fefr^ fc .
.. ,
100
t
1
13 10
VC8(T)
30 100
a(°c)
& TBE Y»
H I
CE(aet) c
1.6 Paliio Test
HI 1
1.4 I
1.2 J 1
a
^ J
II
1
ll'l
1
S 0.8
V «• VC«« gff • UiL*"*
0.6
0.4 li
linn
Tcs(»t>
• K »ioi M i-^""
O.J
n
1000 1 10 100 1000
3.78.0810B.8100B
—
2SB512 2SB512A 2SD365 2SD365A

CASE TO-220B
THE 2SB512, 2SB512A (PNP) AND 2SD365,
2SD565A (NPN) ARE SILICON PLANAR
EPITAXIAL BASE POWER TRANSISTORS 07
COMPLEMENTARY CHARACTERISTICS. THEY
ARE INTENDED TOR 10 TO 20W AUDIO
AMPLIFIER OUTPUTS AND SWITCHING
APPLICATIONS UP TO 3 A COLLECTOR CURRENT.

Collector-Base Voltage
*.~.—»—»———..
Vqbq
2SB512 (PNP)
2SP365
60V
2SB512A
2SD365A
80V
s
Collector-Emitter Voltage Vcso 60V 80V
Emitter-Base Voltage V^bo 5V
Collector Peak Current (t £10nS) Icm 6A
Total Power Dissipation (TC£25°C) Ptot 25W
Junction Temperature Tj 150«>C
Storage Temperature Range Ta tg -55 to +150°C
ELECTRICAL CHARACTERISTICS ( T A-25°C unless otherwise noted)

Collector-Base Breakdown Voltage BVcbo IC-O.lmA Ie-0
2SB512, 2SD365 60 V
2SB512A, 2SD365A 80 V
Collector-Emitter Breakdown Voltage LVcEO * IC-lOOmA IB=0
2SB512, 2SD365 60 V
2SB512A, 2SD365A 80 V
Collector Cutoff Current ICB0 30 HA VQB-20V Ie-0
Emitter Cutoff Current IEBO 1 mA VEB-5V Ic-0
Collector-Einitter Saturation Voltage V(3E(sat) * 0.28 1 V IC-2A IB-0.4A
Base-Emitter Voltage VbE * 0.83 1.4 V IC-1A VCE-3V
B.C. Current Gain (note) Hj"E 1* 30 160 IC-1A VCE-3V
Hyg 2 * 40 IC-0.1A VCE-3V
» Pulse Test i Pulse Width-0.3mS, Duty Cycle-1^
note i Hfe 1 is classified as follows. Group Q t 30-60 Group P i 50-100 Group i 80-160
"
2SB512 2SB512A 2SD365 2SD365A
TJU25°C unless otherwise noted)

(
F vs T SAFE OPERATING AREA (D.C.)

tot /L
10
50 PC-25<>C
40 ! 1
* '
,
!
, i
1
!
3°
r
t &
^ ^fe *,
Sf•* 0.3
1
fe 2SB512A, 2SD365A4I
Tw
0.1
100 200 1 3 10 30 100
t y
a(°c) «(y)
160
HyE rs ic V
CE(sai) *
V
BE " J
C
1.6 ii i '"rrn
VCE-3V
-
i
III ill! Tjj 'i ulse Test

140 1.4 "
HFE
120
II
1.2 H
tjj
I
i
I
1 ,
J- h
'
1
|
1
100 1 -" i i
,! 1 a- III
VBE
80 £ 0.8 e v
3E- 3V
60 ~fm
yk
P*?W tfft
1
0.6
Liti
llll
40 5^ 'I s -_l
HI il
il
>
20
0.01
111
0.1
llll
HI
10
o.sj
0.01
VCE( sal
eic -5:
ib~ :|
0.1
l 10
X
*C (A) C (A)
12.77.0870E.8700E
2SC789 2SD570 2SD526
THE 2SC789, 2SD570, 2SD526 ARE NPN CASE T0-220B

SILICON EPITAXIAL BASE POWER
TRANSISTORS DESIGNED TOR 20 TO 25W
AUDIO AMPLIFIER OUTPUTS AND SWITCHING
APPLICATIONS UP TO 4A COLLECTOR
CURRENT. THE 2SC789, 2SD570 AND
2SD526 ARE COMPLEMENTARY TO 2SA489.
2SB604 AND 2SB596 RESPECTIVELY. BCE
ABSOLUTE MAXIMUM RATINGS 2SC789 2SD570 2SD526
Collector-Base Voltage CBO 70V 70V 80V
Collector-Emitter Voltage vCEO 60V 70V 80V
Emitter-Base Voltage VeBO 5V
Collector Peak Current (t^lOmS) ICM 8A
Total Power Dissipation (Tc«25°C) Ptot 50W
Junction Temperature T 150°c
Storage Temperature Range Tstg 55 to +150°C
THERMAL RESISTANCE
Junction to Case Ojc 4.17°C/W
P
tot
8 T
A
SAFE OPERATING AREA (1).C.)
10 rc - 25°C
50
"ft*
'•
40
^ \ v
*
}°
|A ^ 5 -.
— J =t
20
k > 4
kA" n
0.3
2S C7fw-»
\\\
10
& f- 2S D5'ro-
2S D£2•6- :|
0.1;
100 200 10 30 100
t YCE(V)
a(?c)
2SC789 2SD570 2SD526
LECTRICAL CHARACTERISTICS (TA-25°C unless otherwise no ted)
PARAMETER SYMBOL MIN TYP MAX Wtl TEST CONDITIONS
Collector-Base Breakdown Voltage B^CBO IC-O.laA lB-0

2SC789 70 V
23D570 70 V
2SD526 80 V
Collector-Emitter Breakdown Voltage LVcBO * IC-IOOBA lB-0

2SC789 60 V
2SD570 70 V
2SD526 80 V

2SC789 30 VCB -50V ie-o
2SD570 30 VCB-50V IE-O
2SD526 50 VCB-80V lE-0
Enitter Cutoff Current lEBO 100 )* VgB»5V ic-o
Collector-Emitter Saturation * 0.4 1.5 V IC-3A IB-0.3A

CE(sat)
Voltage
Base-Baitter Voltage VBE *

2SC789 1.0 1.5 V IC-2.5A Vce-5V
2SD570 1.03 1.5 V IC-3A VCE-5V
2SD526 1.03 1.5 V IC-3A VCE-5V
B.C. Current Gain (note) H*E 1 * 40 240 IC-0.5A VCE"5V
Hib 2 » 15 IC-3A VCE-5V
Current Gain-Bandwidth Product fT 3 MHz IC-0-5A VC E-5V

» Pulse Test t Pulse Width-0.3««Sf Duty Cycle-1^
note i H?e 1 *classified as follows . Group R i 40-80
Group Y i 120-240
Hyg vs Ic
160
VCE-5V
II
II! . Ta-25°C
140
Pt lse Test
120
HPE
100
80
60
S
40
20 1
llll
0.01 0.1 10
X
C (A)
12.77.8500E
2SC829
NPN SILICON RF SMALL SIGNAL TRANSISTOR
THE 2SC82S IS AN NPN SILICON PLANAR CASE T0-92B

EPITAXIAL TBANSISTOR FOR RF SMALL
SIGNAL APPLICATIONS SUCH AS V, OSC,
MIXES AND IF STAGES IN FM/AM BADIO
SETS.
ABSOLUTE MAXIMUM EATINGS

Collector-Better Voltage VCEO 20V
Baitter-Base Voltage VfiBO 6V
Collector Current IC 30aA
Total Power Dissipation (Ta<25°C) Ptot 250aW
derate 2.5aW/«C above 86*C
Operating Junction * Storage Teaperature Tj, Tstg -65 to 12S*C
EUCTBICAL CHARACTERISTICS ( TA=25»C)
PABAMETEB SYMBOL MIN TYP MAX UNIT TEST CONDITIONS

Collector-Base Breakdown Voltage BVCBO 30 V Ic*0.01aA 1^0
Collector-Emitter Breakdown Voltage LVCEO 20 V ICx2aA (Pulsed)
IBbO
Baitter-Base Breakdown Voltage BVEBO 5 V iEeO.OlaA IC«0
Collector-Eaitter Saturation Voltage VCE(sat) 0.1 V IC-10aA lB-laA
Base -Emitter Voltage VBE 0.68 V ICslaA VCE=10V
B.C. Current Gain bfe * 40 250 IC=laA VCB*10V
Current Gain-Bandwidth Product *T 150 230 MHs IOl«A VCE-lOV

Feedback Capacitance (Conaan Emitter) Cre 1.3 1.6 P* IOlaA VCB>10V
f*10.7MHs
Feedback Iapedance (Coaaon Base) |Zrb| 60 -n- -JEklaA VCBslOV
* BFE is classified as follows.
GROUP A : 40-100 GROUP B i 70-160 GROUP C t 110-250

2SC829
TYPICAL CHARACTERISTICS AT Ta»25»C
HfE (NOBUAUZED) ts *c tj » ic
Cob & Cw TS VCB
2.0 500i 4
ft lis* T..1 VCEslOV lfi.0
III
"
VcEbIOV 'faUBs
400 1
a * I
fT
'ffl
> 3
(l
"loo / (l*)
i
/ Cyfc
200 1
-fr
1 1
cPT
100 1
I 111 C
1 10 30 0.1 1 10 100 4 8 12
*C (-A) IC (-A) VCB (V)
TYPICAL y-PABAMETEBS AT tj^Zb'C
(Common Emitter f - 10.7 MHz VcE " 6V)

100 1000f=f -100 IOOi
-e„ r:::
"fl
«re 'Vfe'
<m») - - <pF) <»<»> (°) (mU)
Yre
10 100 -10 10
""IT
i: ±B
'0.5 1 5 0.5 5
as 1 5 0.5 1 5 1 .
,
IC(mA) !C(mA) IC(mA) 'C(mA)
3.78.3300A
2SC838 2SC839
THE 2SC858, 2SC839 ARE NPN SILICON PLANAR CASE TO-92B

EPITAXIAL TRANSISTORS FOR RF SMALL SIGNAL
APPLICATIONS. THEY ARE SPECIALLY SUITED
FOR RF AMPLIFIER, OSCILLATOR, MIXER, AND
I* AMPLIFIER IN FM/aM RADIO SETS.

Total Power Dissipation (Ta<250<;) Ptot 250mW
derate 2.5mW/«>C above 25°C

Collector Cutoff Current IijBO 100 nA VCB-15V Ie-0
Bnitter Cutoff Current lEBO 100 nA VEB-3V Ic-0
Collectar-Emitter Saturation Voltage CE(sat) 0.1 0.3 V IC-10mA iB-lmA
Base-Emitter Voltage VBE 0;6? V iC-lmA VCE-6V
D.C. Current Gain (Note l) HFE 30 180 IC-0.5mA VCE-3V
Current Gain-Bandwidth Product fT 150 250
'
MHz IC-lmA VCE-6V

Collector-Base Capacitance Cob 1.9 2.5 PF Vcb-^T lE-0
f-lMHz
Feedback Capacitance Cre 1.3 1.8 PF VCB-6V Ie-0
f-lMHz
Feedback Time Constant Cc^bb' 25 50. PS IC»10mA VCE-6V
f-31.8MHz
2SC839 only 2.5 4 dB RG-500iL f-lMHz
Note 1 i Hfe i» classified as follow.

Group J t 30-80 Group H i $0-120 Group p , 90-I8O
2SC838 2SC839
Cob & Cre vs Vcjj H?E (NORMALIZED) vs IC

2. Or
3 Jill 'VCE^
t Pulse Test
llllll
1.6
3
6
t
a 1.2
(PP)2 ^; »
S, 0.8 \0
're
I
w 0.4
t
t
1
t
0.1 1 10 100
VCB (V) IC (mA)
fT vs Ic
500 1 """ "lipuise Test
Vci!-6V
400 «i X.
/
III
\
, 500
fT
f/ \
1
(MHz)
200
1
100
III
0.1 1 10 100
IC (mA)
2.78.3300A
2SC922 2SC1047
THE 2SC922, 2SC1047 ARE NPN SILICON CASE TO-92B

PLANAR EPITAXIAL TRANSISTORS FOR USE
IN RF AND CONVERTER STAGES IN FM/AM
RADIO SETS.
ECB
ABSOLUTE MAXIMUM RATINGS 2SC922 2SC1047
Col lee tor -Emitter Voltage VcEO 20V 20V
Collector Current I(j 20mA 15mA
Total Power Dissipation (Ta«25oC) Ptot 250mW 150mW
ELECTRICAL CHARACTERISTICS (Ta- 25°C)

2SC922 2SC1047
MIN MAX MIN MAX
Collector Cutoff Current ICBO 0.1 ,* VCB-20V Ie-0
10 VCB-30V IE-0
r*
Emitter Cutoff Current lEBO 0.1 10 VEB-3V Ic-0
H*
D.C. Current Gain (Note) HpE 40 180 40 160 IC-lmA VcE-6V
Current Gain-Bandwidth Product fT 400 450 MHz lC-lmA VCE-6V
Feedback Capacitance Cre 1.2 pP VCB-10V Ie-0

f-lMHz
1.0 PP VCE-6V Ic-lmA
f -10. 7MHz
Collector-Base Tine Constant Ccrbb' 22 PS IC-lmA VCE-6V

f- 31.8MHz
Power Gain Gpe 20 20 dB IC-lmA VCE-6V

f-lOOMHz
Noise Figure NP 5 5 dB IC-lmA VCE-6V

HG-50A f-lOOMHz
Note 1 The Hyg of 2SC922 is classified as follows GROUP M 1 40-80 GROUP L : 60-120
GROUP K 90-180
The Hfe of 2SC1047 is classified follows — GROUP B 1
:
40-110 GROUP C 1 65-160

2SC922 2SC1047
Hi?!? (NORMALIZE) vs ic VBS A VcE(sat) vs IC

1.6 1.6
i
Pulse Test PuIbo Test
llllll
"tnj
1.2 Hill 1.2
i~
¥ it (Volt) llllll
d o.d 0.8 -TOE „ M

1 @VCj5™ ---
S5
.
i
t
It -j-i irfflr
w 0.4 It 1
0.4
llll
1
it 1
] it llllll L.@ IC=10IB .
1 10 0.1 1 10
IC (niA) IC (mA)
fT vs Ic
800 Cot & Cre vs T C3
ll
I vci>6V 5
lE"0
l| r-i 4Hz
i
600 jj_J
4
ll
(MHz)
I 5
TH 1
||
I
I
1 III
^ Col
I
ll
Cre
III 1 l
1 1
0.1 10
IC (mA) VCB (V)
Gpe vs f
50
IC-lmA
vc E-ov
40
*<n
(dB)
?n
<
in
100 1000 100

f (MHz)
3.78.3100B
2SC1048
NPN SILICON HIGH VOLTAGE VIDEO AMPLIFIER
CASE TO-39
THE 2SC1048 IS AN NPN SILICON PLANAR TRANSISTOR
DESIGNED TOR VIDEO AMPLIFIERS IN TELEVISION
RECEIVERS AS WELL AS FOR HIGH VOLTAGE SWITCHING
UP TO lOOmA CURRENT.
CgB

Collector-Emitter Voltage VCEO 2O0V
Collector Current Iq 50mA
Total Power Dissipation (Tc^25°C) Ptot 4W
(Ta<25°C) 600mW
Operating Junction & Storage Temperature Tj, Tetg -55 to 150°C
ELECTRICAL CHARACTERISTICS T A-25 C unless otherwise noted)

(

Collector-Base Breakdown Voltage BVCBO 200 V IC-O.laA IE-O
Collector-Emitter Breakdown Voltage LVCEO 200 V IC-3mA (Pulsed)

IB-O
Emitter-Base Breakdown Voltage BVebo 6 V lE-0.1mA IC-O
Collector Cutoff Current IGBO 10 p* Vcb-IOOV IB-O
Collector-Emitter Saturation Voltage VcE(sat) 1.3 V IC-25mA IB-2.5mA
D.C. Current Gain HpE * 40 200 IC-25mA VCE-lOV

Current Gain-Bandwidth Product fT 40 MHz IC-lQmA VCE-lOV
Collector-Base Capacitance Cob 4.2 PF VCB-10V IE-0

f-lMHz
* Hj>e i8 classified a s follows.
Group C t 40-80 Group D t 60-120 Group E i 100-200

"
2SC1048
HFE rn *C
vBE(s»t) * VCE(sat) vs XC
200 10
Hill -4ff | IC-ÎB I
I Pulse Testu
.14.
160 llll
.IK ITji
mi
120 nil If
HR tIJIIII VOLT II
1
z vBE(sat)-
60 c *m
1
i
vis
X
0.3
1 I ill It 1
40 ^1 1
III
llll
mi V(JS'
sSSSr"
Pais* Test |]| llll nil
0.1
0.1 1 10 100 1000 0.1 1 10 100
JC («A) *c (.A)
fT vs *C Ci« & C ob v, VR
100 TCE-10V 100
I
E"°
80 MN 30
-(-ib "
f-lMRz
60 <p»)
'
10 *«=
(MHs)
40
iii'Cbk
10 100 10 100
*c(«A> YB (V)
12.77.7300B
2SD234 2SD235
THE 2SD 234. 2SD 235 ARE NPN SILICON

CASE TO-220B
SINGLE DIFFUSED MESA POWER TRANSISTORS
DESIGNED TOR LOW SPEED SWITCHING AND
AUDIO POWER AMPLIFIER APPLICATIONS.
THEY FEATURE LARGE SAFE OPERATING AREA.
BCE
ABSOLUTE MAXIMUM RATINGS 2SD 234 2SD 235

Collector-Base Voltage 7CBO 60V 50V
Total Power Dissipation g Tc625°C Ptot 25W
© Ta*25°C 1.5W
*J 150°c
THERMAL RESISTANCE
Junction to Case 5°C/W max.
Junction to Ambient »ja 83°c/w max.
p vs T
tot A SAFE OPERATING AREA (l).C.)
50
to
i 3(
3°
J
t
^
Ô
ft *
>&
is
K .
100 200
T 100
A(°C)
2SD234 2SD235

PARAKETER SYMBOL vm TIP MAX unit TEST CONDITIONS
Collector-Base Breakdown Toltage B*CBO IC-lOmA IE-O
2SD 234 60 T
2SD 235 50 T
Collector-Emitter Breakdown Toltage LTCBO * IC-100mA Ij-0

2SD 234 50 T
2SD 235 40 T
Baitter-Baae Breakdown Voltage BTEBO 10 T iE-lOmA ic-o
Collector Cutoff Current ICBO 100 TCB-20T Ig-0

H*
Emitter Cutoff Current J EB0 100 TgB"5T ic-o
P*
Collector-Bnitter Saturation CE(sat)*
Toltage 2SD 234 0.5 1.2 T IC-3A IB-0.3A
2SD 235 0.23 1 T IC-IA IB-0.05A
Base-Eflitter Toltage be * 0.68 0.9 T IC-0.5A TCE-5T
B.C. Current Gain HPE 1 » 40 240 IC-0.5A TCE-5T
B.C. Current Gain HpE 2 *

2SD 234 15 IC-2.5A CB-5T
2SB 235 20 IC-IA TCE-5T
Current Gain-Bandwidth Product fT 0.8 1.5 MHz IE-0.2A TCE-5T
Collector-Base Capacitance Cob 250 PP TCB-10T IE-O

f-lMHz
* Pulse Test 1 Pulse Width-0.3mS, Duty Cycle-1/.
HPE " Ic YCE(s«t) * YBE ™ *C

xou
11
M Ta-25°C
111I1TCE-5T
I
Pulse Test'
II
HPE
J
4C
20
||
0.01 0.1 10
*C (A) hto
12.77.MA
MECHANICAL OUTLINES
(All dimensions in inches unless otherwise noted)

HONG KONG
MICRO ELECTRONICS LTD. jte
38 HUNG TO ROAD,
KWUN TONG, KOWLOON, HONG KONG
TELS: 3-430181-6, 3-893363, 3-892423
CABLE: MICROTRON, HONG KONG
TELEX: 73510 MICRO HX
P. O. BOX 9477, KWUN TONG, HONG KONG
LONDON, U.K. MUNICH, WEST GERMANY

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WEMBLEY, MIDDLESEX, S0GO MUENCHEN 40
U.K. WEST GERMANY
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yV6

TRANSISTORS & ICs

MICRO ELECTRONIC LTD.

included, or a particular one designed to your own specifications, please contact

M.E.L. regional sales offices and distributors.

APPLICATIONS REFERENCE DATA SHEETS APPLICATIONS REFERENCE DATA SHEETS

MULTIBAND RADIO km types GERMANIUM REPLACEMENT MSB492

PORTABLE TV ex types 27 MHz LOW POWER ™??,°,

AUDIO AMPLIFIER PHOTO DETECTOR

BLINKING TOY KIT D20.U20

NOTE : For Miniature Transistors, see BC146, BC200.

For N-Channel JFETs. see 2N3823.

For Rectifiers and LEDs, see individual catalogues.

GENERAL PURPOSE AMPLIFIERS HIGH

Nw VcEO, Hfe \ RF-IF GENERAL PURPOSE AMPLIFIERS HIGH

BC308 BC177 TO-92F -25B

BC309 BC177 TO-92F -20B

BC321 BC177 TO-92A -30B

BC322 BC177 TO-92A -20B

BC327 TO-92F -45A

BC440 TO-39 40A

BC461 BC440 TO-39 -60Y

BC527 TO-92A -60Y

BC528 BC527 TO-92A -80Y

BC537 TO-92A 60Y

BC559 BC556 TO-92F -30B

(2) HFE in X, Y, A, B, C categories. X<«65, Y~100, A«165, B«300, C«500.

BD220 TO-220B 70X (low speed)

BD221 BD220 TO-220B 40X (low speed)

BD222 BD220 TO-220B 60X (low speed)

BD239 TO-220B 45Y

\^ (Note) SMALL SIGNAL AND MEDIUM SPEED SWITCHES VOLTAGE

BF158 TO- 106 12X

CL055 TO-92A -20A (low V(:ek>

RFIF GENERAL PURPOSE AMPLIFIERS HIGH

CL155 TO-92A -25A (low VCEK)

CX705 TO-3 60X (low speed)

CX906 TO-92A -40A

D20.U20 Blinking Toy Kit

D44C TO-220B 30~80X

FPT100 TO- 106 Photo 1 'ransistoi

FPT100A FPT100 TO- 106 Photo Transistoi

FPT100B FPT100 TO- 106 Photo 1"ransistoi

KM934 O TO-92A 30A II

LN9014 TO-92A 25B

MAS32 TO-72 Silicon Controllc id Switl :h

MAS39 TO-72 Silicon Controlli d Swit :h

MD8009 Digital Alarm CI ock (I.C:.)

MEL11 TO-106 Photo C )arlington Trans stor

MEL12 MEL11 TO-106 Photo Darlington Trans stor

MEL31 TO-106 Photo Transistor

(2) Hfe in X, Y, A, B, C categories. X«65, Y*100, A«165, B«300, C~500.

MEU21 TO-106 Program nable Unijunction Transistor

MH0B10 MH8100 TO-220B -30Y

ML555 Timer (1 C.)

ML1060 Digit Driver (I.C.

ML2005 5-Volt Voltage Regulato (I.C.)

ML9400 Voltage to Frequ sncyCc nverter (I.C.)

MPS2711 MPS6565 TO-92A 18X