APM4910K

Dual N-Channel Enhancement Mode MOSFET

Features Pin Description

• Channel 1
30V/7A,

OM
RDS(ON) = 22mΩ (typ.) @ VGS = 10V
RDS(ON) = 26mΩ (typ.) @ VGS = 4.5V
• Channel 2
30V/10A, Top View of SOP − 8

.C
RDS(ON) = 12mΩ (typ.) @ VGS =10V
RDS(ON) = 16mΩ (typ.) @ VGS =4.5V D1 S1/D2
(1) (2) (5) (6) (7)
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free Available (RoHS Compliant)

Applications
IC G1 (8)

G2
(3)
T-
• Power Management in Notebook Computer,
S2 (4)
Portable Equipment and Battery Powered
Systems N-Channel MOSFET
SE

Ordering and Marking Information

Package Code
APM4910
K : SOP-8
IP

Lead Free Code Operating Junction Temp. Range

C : -55 to 150 °C
Handling Code
Handling Code
Temp. Range TU : Tube TR : Tape & Reel
Package Code Lead Free Code
L : Lead Free Device
CH

APM4910 K : APM4910
XXXXX XXXXX - Date Code

Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering
operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C
for MSL classification at lead-free peak reflow temperature.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp. 1 www.anpec.com.tw

Rev. A.1 - Oct., 2006
APM4910K

Absolute Maximum Ratings (TA = 25°C unless otherwise noted)

Symbol Parameter Channel 1 Channel 2 Unit

VDSS Drain-Source Voltage 30 30
V
VGSS Gate-Source Voltage ±16 ±20

OM
ID* Continuous Drain Current 7 10
A
IDM* Pulsed Drain Current 25 35
IS* Diode Continuous Forward Current 2.5 3 A
TJ Maximum Junction Temperature 150

.C
°C
TSTG Storage Temperature Range -55 to 150
TA=25°C 2
PD* Power Dissipation W
TA=100°C 0.8
RθJA* Thermal Resistance-Junction to Ambient 62.5 °C/W
Note:
IC
*Surface Mounted on 1in pad area, t ≤ 10sec.
2
T-
SE
IP
CH

Copyright  ANPEC Electronics Corp. 2 www.anpec.com.tw

Rev. A.1 - Oct., 2006
APM4910K

Electrical Characteristics (TA = 25°C unless otherwise noted)

Channel 1

Channel 1
Symbol Parameter Test Condition Unit
Min. Typ. Max.

OM
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 30 V
VDS=24V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=85°C 30

.C
VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 1 1.5 2 V
IGSS Gate Leakage Current VGS=±16V, VDS=0V ±100 nA
a VGS=10V, IDS=7A 22 28
RDS(ON) Drain-Source On-state Resistance mΩ
VGS=4.5V, IDS=5A 26 34
VSD

Qg
Qgs
a
Diode Forward Voltage
Gate Charge Characteristics
Total Gate Charge
Gate-Source Charge
b
IC ISD=2.5A, VGS=0V

VDS=15V, VGS=4.5V,
IDS=7A
0.8

10
1.5
1.1

14
V

nC
T-
Qgd Gate-Drain Charge 5
b
Dynamic Characteristics
RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 1.5 Ω
Ciss Input Capacitance VGS=0V, 880
SE

Coss Output Capacitance VDS=15V, 125 pF

Frequency=1.0MHz
Crss Reverse Transfer Capacitance 90
td(ON) Turn-on Delay Time 6 12
tr Turn-on Rise Time VDD=15V, RL=15Ω, 11 21
IDS=1A, VGEN=10V, ns
IP

td(OFF) Turn-off Delay Time RG=6Ω 27 50

tf Turn-off Fall Time 5 10
Notes:
a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
CH

b : Guaranteed by design, not subject to production testing.

Copyright  ANPEC Electronics Corp. 3 www.anpec.com.tw

Rev. A.1 - Oct., 2006
APM4910K

Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)

Channel 2

Channel 2
Symbol Parameter Test Condition Unit
Min. Typ. Max.

OM
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 30 V
VDS=24V, VGS=0V 50 µA
IDSS Zero Gate Voltage Drain Current
TJ=85°C 5 mA

.C
VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 1.3 1.8 2.5 V
IGSS Gate Leakage Current VGS=±20V, VDS=0V ±100 nA
a VGS=10V, IDS=10A 12 15
RDS(ON) Drain-Source On-state Resistance mΩ
VGS=4.5V, IDS=7A 16 21
VSD

Qg
Qgs
a
Diode Forward Voltage
Gate Charge Characteristics
Total Gate Charge
Gate-Source Charge
b
IC ISD=1A, VGS=0V

VDS=15V, VGS=4.5V,
IDS=10A
16
3.7
0.52

22
V

nC
T-
Qgd Gate-Drain Charge 8.5
b
Dynamic Characteristics
RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 1.7 Ω
Ciss Input Capacitance VGS=0V, 1610
SE

Coss Output Capacitance VDS=15V, 255 pF

Crss Reverse Transfer Capacitance Frequency=1.0MHz 160
td(ON) Turn-on Delay Time 10 19
tr Turn-on Rise Time VDD=15V, RL=15Ω, 11 21
IP

IDS=1A, VGEN=10V, ns
td(OFF) Turn-off Delay Time RG=6Ω 39 71
tf Turn-off Fall Time 12 23
Notes:
a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
CH

b : Guaranteed by design, not subject to production testing.

Copyright  ANPEC Electronics Corp. 4 www.anpec.com.tw

Rev. A.1 - Oct., 2006
APM4910K

Typical Characteristics
Channel 1
Power Dissipation Drain Current
2.5 8

OM
2.0
6

ID - Drain Current (A)

Ptot - Power (W)

1.5

.C
4

1.0

2
0.5

0.0
0
TA=25 C
20
o

40 60
IC
80 100 120 140 160

Tj - Junction Temperature (°C)

0
0 20
o
TA=25 C,VG=10V

40 60 80 100 120 140 160

Tj - Junction Temperature (°C)

T-
Safe Operation Area Thermal Transient Impedance
SE

100 2
Normalized Transient Thermal Resistance

1 Duty = 0.5

0.2
ID - Drain Current (A)

10
it
Lim

IP

0.1
n)

300us
s(o
Rd

1ms 0.1 0.05

1 0.02
10ms
0.01
CH

100ms
0.01
Single Pulse
0.1 1s
DC

2
Mounted on 1in pad
O o
TA=25 C RθJA : 62.5 C/W
0.01 1E-3
0.01 0.1 1 10 100 1E-4 1E-3 0.01 0.1 1 10 30

VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)

Copyright  ANPEC Electronics Corp. 5 www.anpec.com.tw

Rev. A.1 - Oct., 2006
APM4910K

Typical Characteristics (Cont.)

Channel 1
Output Characteristics Drain-Source On Resistance
25 40
VGS= 3.5,4, 4.5, 5, 6, 7, 8, 9, 10V

OM
35

RDS(ON) - On - Resistance (mΩ)

20
ID - Drain Current (A)

30
VGS= 4.5V
15

.C
3V 25
VGS= 10V
10
20

0
0.0 0.5 1.0 1.5
2.5V

2.0 2.5
IC
3.0
15

10
0 5 10 15 20 25

VDS - Drain-Source Voltage (V) ID - Drain Current (A)

T-
Drain-Source On Resistance Gate Threshold Voltage
SE

60 1.6
ID=7A IDS =250µA
55
1.4
Normalized Threshold Voltage

50
RDS(ON) - On - Resistance (mΩ)

1.2
45
IP

1.0
40

35 0.8

30
0.6
CH

25
0.4
20
0.2
15

10 0.0
1 2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150

VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)

Copyright  ANPEC Electronics Corp. 6 www.anpec.com.tw

Rev. A.1 - Oct., 2006
APM4910K

Typical Characteristics (Cont.)

Channel 1
Drain-Source On Resistance Source-Drain Diode Forward
2.00 25
VGS = 10V

OM
1.75 IDS = 7A
10
Normalized On Resistance

1.50
o
Tj=150 C

IS - Source Current (A)

1.25

.C
1.00 o
Tj=25 C
1
0.75

0.50

0.25

0.00
-50 -25 0 25 50
o
RON@Tj=25 C: 22mΩ

75 100 125 150

IC 0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
T-
Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V)

Capacitance Gate Charge

SE

1400 10
Frequency=1MHz VDS= 15V
9
1200 IDS= 7A
VGS - Gate - source Voltage (V)

1000 7
IP
C - Capacitance (pF)

Ciss
6
800
5
600
4
CH

400 3

2
200
Coss
1
Crss
0 0
0 5 10 15 20 25 30 0 4 8 12 16 20

VDS - Drain - Source Voltage (V) QG - Gate Charge (nC)

Copyright  ANPEC Electronics Corp. 7 www.anpec.com.tw

Rev. A.1 - Oct., 2006
APM4910K

Typical Characteristics (Cont.)

Channel 2
Power Dissipation Drain Current
2.5 12

OM
10
2.0

ID - Drain Current (A)

8
Ptot - Power (W)

1.5

.C
6

1.0
4

0.5

0.0
0
TA=25 C
20
o

40 60 80 100 120 140 160

Tj - Junction Temperature (°C)

IC 2

0
0 20
o
TA=25 C,VG=10V

40 60 80 100 120 140 160

Tj - Junction Temperature (°C)

T-
Safe Operation Area Thermal Transient Impedance
SE

100 2
Normalized Transient Thermal Resistance

1
Duty = 0.5
it
Lim

0.2
ID - Drain Current (A)

10
n)
s(o

300us
IP
Rd

0.1
1ms 0.1 0.05

10ms 0.02
1
100ms
0.01
CH

1s 0.01
0.1
DC Single Pulse

2
Mounted on 1in pad
O
TA=25 C o
RθJA : 62.5 C/W
0.01 1E-3
0.01 0.1 1 10 100 1E-4 1E-3 0.01 0.1 1 10 30

VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)

Copyright  ANPEC Electronics Corp. 8 www.anpec.com.tw

Rev. A.1 - Oct., 2006
APM4910K

Typical Characteristics (Cont.)

Channel 2
Output Characteristics Drain-Source On Resistance
35 22
VGS= 4, 4.5, 5, 6, 7, 8, 9, 10V

OM
30 20

RDS(ON) - On - Resistance (mΩ)

18
25
ID - Drain Current (A)

VGS= 4.5V
16
20

.C
3.5V
14
15 VGS= 10V
12

10
10

0
0.0 0.5 1.0 1.5
3V

2.0 2.5
IC
3.0
8

6
0 5 10 15 20 25 30 35

VDS - Drain-Source Voltage (V) ID - Drain Current (A)

T-
Drain-Source On Resistance Gate Threshold Voltage
SE

40 1.8
ID= 10A IDS =250µA
35 1.6
Normalized Threshold Voltage
RDS(ON) - On - Resistance (mΩ)

1.4
30
IP

1.2
25
1.0
20
0.8
15
CH

0.6
10
0.4

5 0.2

0 0.0
1 2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150

VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)

Copyright  ANPEC Electronics Corp. 9 www.anpec.com.tw

Rev. A.1 - Oct., 2006
APM4910K

Typical Characteristics (Cont.)

Channel 2
Drain-Source On Resistance Source-Drain Diode Forward
2.0 35
VGS = 10V

OM
1.8 IDS = 10A
Normalized On Resistance

1.6 10 o
Tj=150 C

IS - Source Current (A)

1.4

1.2

.C
o
Tj=25 C
1.0
1
0.8

0.6

0.4

0.2
-50 -25 0 25 50
o
RON@Tj=25 C: 12mΩ

75 100 125 150

IC 0.1
0.0 0.3 0.6 0.9 1.2 1.5
T-
Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V)

Capacitance Gate Charge

SE

2400 10
Frequency=1MHz VDS= 15V
2200 9
IDS= 10A
2000
VGS - Gate - source Voltage (V)

8
1800
7
IP
C - Capacitance (pF)

1600 Ciss

1400 6

1200 5
1000 4
CH

800
3
600
2
400 Coss
200 1
Crss
0 0
0 5 10 15 20 25 30 0 4 8 12 16 20 24 28 32

VDS - Drain - Source Voltage (V) QG - Gate Charge (nC)

Copyright  ANPEC Electronics Corp. 10 www.anpec.com.tw

Rev. A.1 - Oct., 2006
APM4910K

Packaging Information

SOP-8 pin (Reference JEDEC Registration MS-012)

OM 0.015X45
.C
E H

e1

D
IC
e2
T-
A1
A 1
SE

L
0.004max.
IP

Millimeters Inches
Dim
Min. Max. Min. Max.
A 1.35 1.75 0.053 0.069
CH

A1 0.10 0.25 0.004 0.010

D 4.80 5.00 0.189 0.197
E 3.80 4.00 0.150 0.157
H 5.80 6.20 0.228 0.244
L 0.40 1.27 0.016 0.050
e1 0.33 0.51 0.013 0.020
e2 1.27BSC 0.50BSC
φ1 0° 8° 0° 8°

Copyright  ANPEC Electronics Corp. 11 www.anpec.com.tw

Rev. A.1 - Oct., 2006
APM4910K

Carrier Tape & Reel Dimensions

Po P D
E

OM
P1

F Bo
W

.C
Ao D1 Ko

IC J
T2
T-
C
A B
SE

T1

Application A B C J T1 T2 W P E
IP

330±1 62 ± 1.5 12.75 + 2 + 0.5 12.4 +0.2 2± 0.2 12 + 0.3 8± 0.1 1.75± 0.1
0.1 5 - 0.1
SOP-8 F D D1 Po P1 Ao Bo Ko t
5.5 ± 0.1 1.55±0.1 1.55+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5.2± 0.1 2.1± 0.1 0.3±0.013
CH

(mm)

Cover Tape Dimensions

Application Carrier Width Cover Tape Width Devices Per Reel

SOP- 8 12 9.3 2500

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Rev. A.1 - Oct., 2006
APM4910K

Physical Specifications

Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Reflow Condition (IR/Convection or VPR Reflow)

OM
TP tp
Critical Zone
T L to T P

.C
Ramp-up

TL
tL
Temperature

Tsmax

Tsmin
IC Ramp-down
T-
ts
Preheat

t 25 °C to Peak
SE

25

Tim e

Classification Reflow Profiles

IP

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly

Average ramp-up rate
3°C/second max. 3°C/second max.
(TL to TP)
Preheat
100°C 150°C
- Temperature Min (Tsmin)
CH

- Temperature Max (Tsmax) 150°C 200°C

60-120 seconds 60-180 seconds
- Time (min to max) (ts)
Time maintained above:
183°C 217°C
- Temperature (TL)
60-150 seconds 60-150 seconds
- Time (tL)
Peak/Classificatioon Temperature (Tp) See table 1 See table 2
Time within 5°C of actual
10-30 seconds 20-40 seconds
Peak Temperature (tp)
Ramp-down Rate 6°C/second max. 6°C/second max.
Time 25°C to Peak Temperature 6 minutes max. 8 minutes max.
Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright  ANPEC Electronics Corp. 13 www.anpec.com.tw
Rev. A.1 - Oct., 2006
APM4910K

Classification Reflow Profiles(Cont.)

Table 1. SnPb Entectic Process – Package Peak Reflow Temperatures

3 3
Package Thickness Volume mm Volume mm
<350 ≥350
<2.5 m m 240 +0/-5°C 225 +0/-5°C
≥2.5 m m 225 +0/-5°C 225 +0/-5°C

OM
Table 2. Pb-free Process – Package Classification Reflow Temperatures
3 3 3
Package Thickness Volum e m m Volume mm Volume mm
<350 350-2000 >2000
<1.6 m m 260 +0°C* 260 +0°C* 260 +0°C*

.C
1.6 m m – 2.5 m m 260 +0°C* 250 +0°C* 245 +0°C*
≥2.5 m m 250 +0°C* 245 +0°C* 245 +0°C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and
including the stated classification temperature (this means Peak reflow temperature +0°C.
For example 260°C+0°C) at the rated MSL level.

Reliability Test Program

Test item
SOLDERABILITY
IC Method
MIL-STD-883D-2003 245°C,5 SEC
Description
T-
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles
SE

Customer Service

Anpec Electronics Corp.

Head Office :
IP

No.6, Dusing 1st Road, SBIP,

Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
CH

Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369

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Rev. A.1 - Oct., 2006