 Z01xxxN

SENSITIVE GATE TRIACS

FEATURES
IT(RMS) = 1A
VDRM = 400V to 800V A2
IGT ≤ 3mA to ≤ 25mA

A1

A2

DESCRIPTION
The Z01xxxN series of triacs uses a high
performance TOP GLASS PNPN technology. SOT223
These parts are intended for general purpose (Plastic)
high volume applications using surface mount
technology.

ABSOLUTE RATINGS (limiting values)

Symbol Parameter Value Unit

IT(RMS) RMS on-state current Ttab= 90 °C 1 A

(360° conductionangle)
ITSM Non repetitive surge peak on-state current tp = 8.3 ms 8.5 A
(Tj initial = 25°C )
tp = 10 ms 8
I2 t I2t Value for fusing tp = 10 ms 0.35 A2s

dI/dt Critical rate of rise of on-state current Repetitive 10 A/µs

IG = 50 mA diG /dt = 0.1 A/µs. F = 50 Hz

Non 50
Repetitive

Tstg Storage and operating junction temperature range - 40, + 150 °C

Tj - 40, + 125
Tl Maximum lead temperature for soldering during 10s 260 °C

Voltage
Symbol Parameter Unit
D M S N

VDRM Repetitive peak off-state voltage 400 600 700 800 V

VRRM Tj = 125°C

May 1998 Ed: 1A 1/6

Z01xxxN
THERMAL RESISTANCES

Symbol Parameter Value Unit

Rth(j-a) Junction to ambient 60 °C/W

Rth(j-t) Junction to leads for D.C 30 °C/W

Rth(j-t) Junction to leads for A.C 360°conduction angle (F=50Hz) 25 °C/W

GATE CHARACTERISTICS (maximum values)

PG (AV)= 0.1 W PGM = 2 W (tp = 20 µs) IGM = 1 A (tp = 20 µs)

ELECTRICAL CHARACTERISTICS

Quadrant Sensitivity
Symbol Test Conditions Unit
03 07 09 10

IGT VD=12V (DC) RL=140Ω Tj= 25°C I-II-III MAX 3 5 10 25 mA

IV MAX 5 7 10 25

VGT VD=12V (DC) RL=140Ω Tj= 25°C I-II-III-IV MAX 1.5 V

VGD VD=VDRM RL=3.3kΩ Tj= 125°C I-II-III-IV MIN 0.2 V
tgt VD=VDRM IG = 40mA Tj= 25°C I-II-III-IV TYP 2 µs
IT = 1.4A
dIG/dt = 0.5A/µs
IH * IT= 50 mA Gate open Tj= 25°C MAX 7 10 10 25 mA
IL IG= 1.2 IGT Tj= 25°C I-III-IV TYP 7 10 10 25 mA

II TYP 14 20 20 50

VTM * ITM= 1.4A tp= 380µs Tj= 25°C MAX 1.8 V

IDRM VD = VDRM Tj= 25°C MAX 10 µA
IRRM VR = VRRM
Tj= 110°C MAX 200

dV/dt * VD=67%VDRM Gate open Tj= 110°C MIN 10 20 50 100 V/µs

(dV/dt)c * (dI/dt)c = 0.44 A/ms Tj= 110°C MIN 2 5 V/µs

TYP 1 1
* For either polarity of electrode A2 voltage with reference to electrodeA 1

ORDERING INFORMATION

Z 01 07 M N
TRIAC TOP GLASS PACKAGE :
N = SOT223
CURRENT SENSITIVITY VOLTAGE

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 Z01xxxN

Fig.1 : Maximum power dissipation versus RMS Fig.2 : Correlation between maximum power dissi-
on-state current. pation and maximum allowable temperature
(Tamb and Ttab).

P(W) P (W) Ttab (oC)

1.6 1.6
O
180
1.4 o 1.4 -90
= 180 Rth(j-t) oC/W
1.2 1.2 -95
o
= 120 Rth(j-a) oC/W
1.0 1.0 -100
o
= 90 -105
0.8 o
0.8
= 60
0.6 0.6 -110
o
0.4 = 30 0.4 -115
0.2 I T(RMS) (A) 0.2 -120
Tamb (oC)
0.0 0.0 -125
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 20 40 60 80 100 120 140

Fig.3 : RMS on-state current versus tab tempera- Fig.4 : Relative variation of thermal impedance
ture. junction to ambient versus pulse duration.

I T(RMS) (A) Zth(j-a)/Rth(j-a)

1.2 1.00

1.0

0.8
o
= 180
0.6 0.10

Stan dar d foo t print , e(Cu) =35 m

0.4

0.2
o
Ttab( C) tp( s)
0 0.01
0 10 20 30 40 50 60 70 80 90 100 110 120 130 1E-3 1E-2 1E-1 1 E+0 1 E+1 1 E+2 5 E +2

Fig.5 : Relativevariation of gate trigger current and Fig.6 : Non repetitive surge peak on-state current
holding current versus junction temperature. versus number of cycles.

Igt[Tj] Ih[Tj] ITSM(A)

o o
Igt[Tj=25 C] Ih[Tj=25 C] 8
2.6 Tj initial = 25oC
2.4
2.2
6
2.0
1.8 Igt
1.6 4
1.4
Ih
1.2
1.0 2
0.8
0.6 Number of cycles
Tj(oC)
0.4 0
-40 -20 0 20 40 60 80 100 120 140 1 10 100 1000

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Z01xxxN

Fig.7 : Non repetitive surge peak on-state current Fig.8 : On-statecharacteristics(maximum values).
for a sinusoidal pulse with width : tp ≤ 10ms, and
corresponding value of I2t.

I TSM (A). I2 t (A2 s) I TM (A)

100 10
Tj initial = 25 oC Tj initial
o
25 C
I TSM

10

1
Tj max

1 Tj max
I2t Vto =1.10V
Rt =0.420

tp(ms) VTM (V)

0.1 0.1
1 10 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

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 Z01xxxN
PACKAGE MECHANICAL DATA
SOT223 (Plastic)

DIMENSIONS
REF. Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
V1
A 1.50 1.70 0.059 0.067
A1 0.02 0.10 0.001 0.004
A t C
B 2.95 3.15 0.090 0.124
V
A1 A1 B1 0.65 0.85 0.026 0.033
B1 V2 O
C 0.25 0.35 0.010 0.014
e1
D 6.30 6.70 0.248 0.264
D
e 2.3 0.091
B
e1 4.6 0.181
E 3.30 3.70 0.130 0.146
H 6.70 7.30 0.264 0.287
H E O 0.63 0.65 0.67 0.025 0.026 0.026
S 0.85 1.05 0.033 0.041
t 1.10 1.30 0.043 0.051
V 10° max
e S
V1 10° min 16°max
V2 10° min 16°max

Weight : 0.11 g

FOOT PRINT

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Z01xxxN

MARKING

Type Marking
Z0103DN Z3D
Z0103MN Z3M
Z0103SN Z3S
Z0103NN Z3N
Z0107DN Z7D
Z0107MN Z7M
Z0107SN Z7S
Z0107NN Z7N
Z0109DN Z9D
Z0109MN Z9M
Z0109SN Z9S
Z0109NN Z9N
Z0110DN Z0D
Z0110MN Z0M
Z0110SN Z0S
Z0110NN Z0N

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use of such information nor for any infringementof patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.

 1998 STMicroelectronics - Printed in Italy - All rights reserved.

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