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ESDA25B1: Transil Array For Esd Protection

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 ESDA25B1

Application Specific Discretes TRANSIL ARRAY


A.S.D. FOR ESD PROTECTION
APPLICATIONS
Where transient overvoltage protection in ESD
sensitive equipment is required, such as :
- COMPUTER
- PRINTERS
- COMMUNICATION SYSTEMS
It is particulary recommended for RS232 I/O port
protection where the line interface withstands only
2 kV ESD surges.

FEATURES SO8
6 BIDIRECTIONALTRANSIL FUNCTIONS
VERY LOW CAPACITANCE : C= 20 pF @ VRM
150 W peak pulse power (8/20 µs)

DESCRIPTION FUNCTIONAL DIAGRAM

The ESDA25B1 is a monolithic voltage suppressor


designed to protect components which are
connected to data and transmission lines against
EDS.

I/O 1 1 8 I/O 6
BENEFITS
I/O 2 2 7 I/O 5
High ESD protection level : up to 25 kV
High integration
I/O 3 3 6 I/O 4
Suitable for high density boards

GND 4 5 GND
COMPLIESWITH THE FOLLOWING STANDARDS :
IEC 1000-4-2 : level 4

MIL STD 883C-Method 3015-6 : class 3


(human body model)

January 1998 - Ed : 2 1/5


ESDA25B1
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)

Symbol Parameter Value Unit

VPP Electrostatic discharge 25 kV


MIL STD 883C - Method 3015-6

PPP Peak pulse power (8/20µs) 150 W

Tstg Storage temperature range - 55 to + 150 °C


Tj Maximum junction temperature 125 °C

TL Maximum lead temperature for soldering during 10s 260 °C

ELECTRICAL CHARACTERISTICS (Tamb = 25°C)

Symbol Parameter
VRM Stand-off voltage
VBR Breakdown voltage
VCL Clamping voltage
IRM Leakage current
IPP Peak pulse current
αT Voltage temperature coefficient
C Capacitance
Rd Dynamic resistance

Types VBR @ IR IRM @ VRM Rd αT C


min. max. max. typ. max. typ.
note 1 note 1 note 2 note 3 0V bias
V V mA µA V Ω 10-4/°C pF
ESDA25B1 25 30 1 2 24 1.5 9.7 15
note 1 : Between any I/O pin and Groung
note 2 : Square pulse, Ipp = 25A, tp=2.5µs.
note 3 : ∆ VBR = αT* (Tamb -25°C) * VBR (25°C)

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ESDA25B1
CALCULATION OF THE CLAMPING VOLTAGE
USE OF THE DYNAMIC RESISTANCE
The ESDA family has been designed to clamp fast As the value of the dynamic resistance remains
spikes like ESD. Generally the PCB designers stable for a surge duration lower than 20µs, the
need to calculate easily the clamping voltage VCL. 2.5µs rectangular surge is well adapted. In addition
This is why we give the dynamic resistance in both rise and fall times are optimized to avoid any
addition to the classical parameters. The voltage parasitic phenomenon during the measurement of
across the protection cell can be calculated with Rd.
the following formula:
VCL = VBR + Rd IPP

WhereIpp is the peakcurrent throughthe ESDAcell.

DYNAMIC RESISTANCE MEASUREMENT


The short duration of the ESD has led us to prefer
a more adapted test wave, as below defined, to the
classical 8/20µs and 10/1000µs surges.

I
Ipp

t
2µs

tp = 2.5µs

2.5µs duration measurement wave.

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ESDA25B1
Fig. 1 : Peak power dissipation versus initial Fig. 2 : Peak pulse power versus exponential
junction temperature. pulse duration (Tj initial = 25 °C).

Ppp[Tj initial]/Ppp[Tj initial=25°C] Ppp(W)


1.1 2000
1.0
0.9 1000
0.8
0.7
0.6
0.5
100
0.4
0.3
0.2
0.1 Tj initial(°C) tp(µs)
0.0 10
0 25 50 75 100 125 150 1 10 100

Fig. 3 : Clamping voltage versus peak pulse Fig. 4 : Capacitance versus reverse applied
current (Tj initial = 25 °C). voltage (typical values).
Rectangular waveform tp = 2.5 µs.

Ipp(A) C(pF)
50.0 20
F=1MHz
tp=2.5µs Vosc=30mV
10.0 10

1.0

2
V CL(V) VR(V)
0.1 1
20 25 30 35 40 45 50 55 60 1 2 5 10 30

Fig. 5 : Relative variation of leakage current versus


junction temperature (typical values).

IR[Tj] / IR[Tj=25°C]
200
100

10

Tj(°C)
1
25 50 75 100 125

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ESDA25B1
ORDER CODE

ESDA 25 B 1 RL
PACKAGING:
ESD ARRAY RL = Tape and reel
= Tube
VBR min PACKAGE : SO20

Bidirectionel

MARKING : Logo, Date Code, E25B1


PACKAGE MECHANICAL DATA
SO8 Plastic
DIMENSIONS
REF. Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 1.75 0.069
a1 0.1 0.25 0.004 0.010
a2 1.65 0.065
a3 0.65 0.85 0.026 0.033
b 0.35 0.48 0.014 0.019
b1 0.19 0.25 0.007 0.010
C 0.25 0.5 0.010 0.020
c1 45°(typ)
D 4.8 5.0 0.189 0.197
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 3.81 0.150
F 3.8 4.0 0.15 0.157
L 0.4 1.27 0.016 0.050
M 0.6 0.024
S 8° (max)

Packaging : Preferred packaging is tape and reel.


Weight : 0.08g.

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change withoutnotice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.

 1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.


SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco
The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.

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