ESDA25B1: Transil Array For Esd Protection
ESDA25B1: Transil Array For Esd Protection
ESDA25B1: Transil Array For Esd Protection
FEATURES SO8
6 BIDIRECTIONALTRANSIL FUNCTIONS
VERY LOW CAPACITANCE : C= 20 pF @ VRM
150 W peak pulse power (8/20 µs)
I/O 1 1 8 I/O 6
BENEFITS
I/O 2 2 7 I/O 5
High ESD protection level : up to 25 kV
High integration
I/O 3 3 6 I/O 4
Suitable for high density boards
GND 4 5 GND
COMPLIESWITH THE FOLLOWING STANDARDS :
IEC 1000-4-2 : level 4
Symbol Parameter
VRM Stand-off voltage
VBR Breakdown voltage
VCL Clamping voltage
IRM Leakage current
IPP Peak pulse current
αT Voltage temperature coefficient
C Capacitance
Rd Dynamic resistance
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ESDA25B1
CALCULATION OF THE CLAMPING VOLTAGE
USE OF THE DYNAMIC RESISTANCE
The ESDA family has been designed to clamp fast As the value of the dynamic resistance remains
spikes like ESD. Generally the PCB designers stable for a surge duration lower than 20µs, the
need to calculate easily the clamping voltage VCL. 2.5µs rectangular surge is well adapted. In addition
This is why we give the dynamic resistance in both rise and fall times are optimized to avoid any
addition to the classical parameters. The voltage parasitic phenomenon during the measurement of
across the protection cell can be calculated with Rd.
the following formula:
VCL = VBR + Rd IPP
I
Ipp
t
2µs
tp = 2.5µs
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ESDA25B1
Fig. 1 : Peak power dissipation versus initial Fig. 2 : Peak pulse power versus exponential
junction temperature. pulse duration (Tj initial = 25 °C).
Fig. 3 : Clamping voltage versus peak pulse Fig. 4 : Capacitance versus reverse applied
current (Tj initial = 25 °C). voltage (typical values).
Rectangular waveform tp = 2.5 µs.
Ipp(A) C(pF)
50.0 20
F=1MHz
tp=2.5µs Vosc=30mV
10.0 10
1.0
2
V CL(V) VR(V)
0.1 1
20 25 30 35 40 45 50 55 60 1 2 5 10 30
IR[Tj] / IR[Tj=25°C]
200
100
10
Tj(°C)
1
25 50 75 100 125
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ESDA25B1
ORDER CODE
ESDA 25 B 1 RL
PACKAGING:
ESD ARRAY RL = Tape and reel
= Tube
VBR min PACKAGE : SO20
Bidirectionel
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change withoutnotice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
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