JAVA APPLET-BASED VIRTUAL LABORATORY FOR EMI/EMC TRAINING

C. Christopoulos*, A.C. Cangellaris**, U. Ravaioli** and J. Schutt-Ainé**

(*) School of Electrical and Electronic Engineering, University of Nottingham,NG7 2RD, UK

Ph:+44 115 951 5580; Fax:+44 115 951 5616
christos.christopoulos@nottingham.ac.uk
(**) ECE Department, University of Illinois at Urbana-Champaign
1406 W. Green Street, Urbana, IL 61801, USA
Ph: 217-333-6037; Fax: 217-333-5962;
cangella@uiuc.edu, ravaioli@uiuc.edu, jose@decwa.ece.uiuc.edu

The objectives of this Tutorial are to explain some of the basic EMI/EMC interactions through the application of numerical experimentation
based on the use of applets. The advantages of this approach are twofold: First, complex mathematics are avoided thus focusing on physical
principles and making this material accessible to a wider audience. Second, sophisticated computer codes and numerical techniques are not
employed giving the user an easy to drive interface which resembles the simplicity and immediacy of a physical experiment. The emphasis of
the Tutorial is on fundamentals and no attempt is made to tackle complex problems.

The Tutorial is based around a Powerpoint presentation describing the strengths and limitations of the models employed. These models are then
implemented as Java Applets and are embedded in the presentation. Thus, an interactive simulation environment is provided that enables
engineers to explore how each parameter affects EMC and thus help them to devise effective approaches to mitigation. The Tutorial focuses on
three fundamental aspects of EMI/EMC namely electromagnetic shielding, electromagnetic emissions, and electromagnetic immunity. Internet
access to selected Java Applets for personal use after completion of the Tutorial will be given to all registered Tutorial participants.

Keywords: Electromagnetic Compatibility, EMC/EMI Training, Electromagnetic Shielding, Emission, Immunity.

1
 JAVA APPLET-BASED
VIRTUAL LABORATORY
FOR EMI/EMC TRAINING

C. Christopoulos*, A.C. Cangellaris**,

U. Ravaioli** and J. Schutt-Aine**
(*) University of Nottingham U.K.
(**) University of Illinois at Urbana-
Champaign, U.S.A.

Contents:
• Introduction
• EM Shielding Effectiveness
• EM Emissions
• EM Immunity
• Concluding Remarks

1
 INTRODUCTION
EMC/EMI Training is challenging due to the
•complexity of EM interactions
•abstract nature of mathematical formulations
•complexity of practical systems
•very wide frequency range
•large differences in physical scale
•……..

We need flexible educational tools that suit the

complexities of practical problems, the
background of our engineers and their style of
living and learning 4

JAVA Applet-based training offers a virtual laboratory

with many advantages including:

•delivery close to the normal place of work (online)

•can be tailored to the application area of the trainee
•allows rapid experimentation for illustrating concepts/techniques
•can be easily revisited by the trainee
•can be easily updated with new developments/requirements
•allows rapid access to the instructor
•can provide a framework for study at different depths

...We show below three examples under development...

2
 EM Shielding Effectiveness (SE)

•Introduction and Aims

•General Objectives
•Basic Concepts
•Detailed Model Development
•Model Extensions
•Applet-based Experimentation for SE
•Appendix and Further Reading

•Introduction and Aims

A basic electromagnetic interaction (EM) affecting EMC/SQ is

when an external EM field (e.g. due to a radio transmitter)
penetrates through apertures (e.g. cooling holes, access
openings) to establish EM fields inside enclosures (e.g.
equipment cabinets).
Depending on the magnitude and spectral content of these fields,
signals may be induced on circuits inside the enclosure which
may cause malfunction and/or permanent damage (a
susceptibility problem). Similarly, fields generated by circuits
inside enclosure may ‘leak’ through apertures to propagate in the
external environment potentially causing EMI to other users
(emission problem).
In both these cases of paramount importance is the
establishment of the shielding effectiveness (SE) of the cabinet.
7

3
In practical systems a certain amount of shielding is required to
minimise emissions and immunity problems. The following give
some idea of what is expected:
•SE of the order of 20dB is the minimum worthwhile value
•A SE of 50 to 60 dB is a typical average to cope with most
problems
•For some test equipment and transmitters a SE of the order of
100dB may be necessary
•SE in excess of 120dB is very difficult to get in practice (state
of the art)

For further details see: “Principles and Techniques of

Electromagnetic Compatibility”, C. Christopoulos, CRC
Press 1995

Penetration of EM energy through the equipment cabinet may be

due to one of more of the following mechanisms:
•EM energy penetration through the walls of the cabinet
This is done by diffusion in cases where the electrical
conductivity of the wall material is not high. Also, low-
frequency magnetic fields can penetrate even through
high-conductivity walls.
•EM energy penetration along wire interconnects
This typically happens when EM energy is guided by wire
penetrations such as signal and mains cables
•EM energy penetration through apertures
Apertures may be, access holes, ventilation openings,
doors, poorly joined panels etc.
In this unit we focus on the calculation of the shielding
effectiveness of cabinets with apertures (assuming perfectly
conducting walls).
9

4
 The central aim of this unit is to:

Understand the penetration of external incident EM fields through

apertures on equipment cabinets and calculate the Shielding
Effectiveness (SE). SE is the same whether one considers
immunity or emission.
external incident field
H

k
E
aperture equipment cabinet

?
Estimate the amount by which the cabinet/aperture
attenuates the external incident field !
10

•General Objectives:

• establish the basic modelling methodology for understanding

field penetration through apertures

•study the impact of cabinet dimensions on SE.

•study the impact of aperture dimensions and number of
apertures on SE.

•quantify the influence of the cabinet contents on SE

•Establish design rules for SE
11

5
 •Basic Concepts:
•A simple type of EM wave which can help us understand the
behaviour of more complex waves is the uniform plane wave.
For this type of wave the electric E and magnetic H field
components are perpendicular to each other and to the
direction of propagation k.
x
E
In this example the electric
field has only an x-
component, the magnetic
field a y-component and the
z propagation direction is
k along z.

H
y
12

•More complex waves may be often analysed in terms of plane

waves. All the essential concepts can be illustrated by focusing
on plane waves.
• The worst case as far as penetration is concerned is when the
electric field is perpendicular to the longest dimension of the
aperture. This is easy to understand:

E
E

Here the field fits exactly

the boundary conditions-hence
it penetrates easily

Here the electric field is parallel to the walls of the slot,

but the tangential component of the electric field should be
zero on a conducting surface-hence the field finds it
difficult to penetrate
13

6
• The aperture (the slot in this case) will allow certain frequencies
to penetrate relatively easily while energy at other frequencies will
penetrate with difficulty. Intuition indicates that frequencies with
wavelengths larger that the largest physical dimension of the slot
will not penetrate easily.

• As stated above, penetration through the slot is frequency-

dependent. In addition, since the cabinet resonates at certain
frequencies, the EM energy which has penetrated past the slot will
distribute unevenly at different frequencies according to the
resonant properties of the cabinet. The presence of PCBs and
other components inside the cabinet complicates matters still
further. A formula for resonances in an empty box is given next.

14

Resonance frequencies of an empty rectangular box

with conducting walls and without apertures:

2 2 2
Ê mˆ Ê nˆ Ê pˆ
f MHz = 150 + +
Ë a¯ Ë b¯ Ëd¯
Where, the frequencies are in MHz, (a,b,d) are the internal
dimensions of the box in meters, and (m,n,p) are integers
which specify the particular mode or resonance. No more
than one of these integers can be zero. Each integers gives
the number of half wavelengths fitting in each direction.

•All these factors must taken into account in any model used to
predict SE

15

7
• The Shielding Effectiveness (SE) is defined as the ratio in
decibels of the incident electric field E0 without the cabinet, to the
field with the cabinet present Ec. In both cases the field is
calculated or measured at the same point.

E
SE = 20log( 0 )
Ec OBSERVATION POINT

E E0
k
H incident field

k
Ec
H
16

Basic configuration:
box
aperture
Output point

b w
z

d
EMI source

17

8
 •Detailed Model Development
The basic strategy is to derive simplified models of the slot
(slotline) and of the cabinet (short-circuited waveguide) and
combine them to study penetration and coupling .
Each part in this interaction is modelled in the simplest possible
way. The following parts need to be modelled:

•The incident field

•The aperture/slot
•The cabinet
We develop models for each of the above part in turn.

18

Model for the Incident Field:

As far as the cabinet is concerned, the incident field can be

described by a Thevenin equivalent circuit where the voltage
source is V0, and the impedance is the intrinsic impedance of the
medium (377 Ohm in air). The exact value of V0 is not important
for SE calculation as it cancels out when the ratio of the two fields
is formed.

V0

h0

19

9
 Model for the Aperture:

A
aperture w b
t
AA

/2 /2
We will construct an equivalent circuit for the aperture as seen
across its centre (points A-AA).
Propagation along the aperture is similar to propagation along a
coplanar stripline. There are in fact two such lines each of length
l/2, which are, to the left and to the right, terminated by short-
circuits (the front walls of the cabinet). The characteristic
impedance of this line Zocs may obtained from the literature.

20

Hence, the equivalent circuit across points A-AA is:

A

s/c Zocs Zocs s/c

AA
Z IN = jZ ocs tan ( b 0 / 2)
/2 /2
where b 0 = 2p / l
ZIN ZIN
Hence, the equivalent slot impedance
is equal to the input impedances 1
Z slot = jZ tan ( b 0 / 2)
2 a ocs
looking left and right in parallel:

Scaling factor l/a accounts for the

different length of slot and cabinet.
Formulae for Zocs are given in the
Zslot
appendix at the end of this presentation.

21

10
Model for the Cabinet:
ƒ z
y
b
x

We consider the cabinet as a rectangular waveguide with

propagation along z. The cutoff wavelength is
lc = 2a n n is and integer and we choose n=1 to get the
lowest possible cutoff frequency
l
lg =
( l)
The guide wavelength is then:
1- l
c

22

This corresponds to waves bouncing between the sidewalls with

no variation in x and n number of half sinusoidal variations in the
y-direction ( TE0,n mode). The guide characteristic impedance is:

m
hg = e
2
Êlˆ
1- Á ˜
Ë lc ¯
Choosing n=1 (lowest frequency mode) and expressing
the guide quantities in terms of the dimensions, we get:
h0
hg =
( )
2
b g = b 0 1 - l 2a
( )
2
1- l
2a
where , h 0 = 377W , b 0 = 2p
l
23

11
Hence, the model for the cabinet looks as follows:

Short-circuit at the wall

opposite the aperture

To slot hg , bg
model

24

Complete model of the System:

We now put together all the various elements to form the

complete model of the system:

V0
Zslot V(z) hg , bg s/c
h0

In this model, the field inside the cabinet and at a distance z from
the side with the slot is represented by the voltage V(z).
25

12
The incident field and the slot models may be combined to form a
Thevenin equivalent as shown below;

Vs

V(z) hg , bg s/c
Zs

z
Z slot Z sloth 0
Vs = V0 , Zs =
Z slot + h 0 Z slot + h 0

This is now a standard TL circuit which can be solved for V(z).

26

To simplify calculations, we replace the circuit to the LEFT and to

the RIGHT of the output point at z by their Thevenin equivalents:

Vs
V(z)
hg , bg s/c
Zs

LEFT RIGHT

27

13
 Thevenin equivalent at a distance z from the slot:

LEFT RIGHT
V1
V(z)
Z2
Z1

Vs
V1 = Z 2 = jh g tan ÈÎ b g ( d - z ) ˘˚
( ) Z
(
cos b g z + j s sin b g z
h g
)
Z s + jh g tan ( b g z )
Z1 =
1 + j s tan ( b g z )
Z
hg
28

The voltage at z representing the electric field inside the box is then:

Z2
V ( z ) = V1
Z1 + Z 2

In the absence of the box the field is given by the following

equivalent:

V0
Vnc Vnc = V0 / 2
h0
h0

Hence, the shielding effectiveness of the cabinet at point z is:

ÊE ˆ Ê V ˆ
SE = 20log Á 0 ˜ = 20log Á 0 ˜
Ë Ec ¯ Ë 2V ( z ) ¯
29

14
•Model Extensions

The procedure outlined shows how to obtain the electric field

shielding effectiveness for an empty (unloaded) cabinet. The
magnetic field shielding effectiveness may also simply be
obtained by calculating the ratio of currents rather than voltages
at point z.
We now investigate two additional aspects of shielding
effectiveness which affect the behaviour of practical systems:
•loaded cabinets
•multiple apertures

These two extensions to the theory are dealt with by modifying

the standard TL model described for the unloaded cabinet.

30

Loaded cabinet:

A simple, phenomenological, way to take account of the contents

of the cabinet and their impact on SE is to assume that the
waveguide representing the cabinet is lossy. In its simplest form
this model assumes distributed losses and a correction term ζ
thus replacing the guide characteristic impedance Zg and
propagation constant βg by
h g¢ = (1 + z - jz )h g , b g¢ = (1 + z - jz ) b g

The correction factor is of the order of the inverse of the loaded

cabinet Q-factor
z Q -1 1

The use of the correction factor is explained in “Immittance

transformation using precision air-dielectric coaxial lines and
connectors” D. Woods, Proc. IEE, Vol. 118, 1971, pp. 1667-1674
31

15
 Multiple apertures:

If there are n identical apertures then the equivalent slot

impedance is:

1
Z slot = n jZ tan ( b 0 / 2)
2 a ocs

Circular apertures:

If the aperture is circular of diameter dh then to a good

approximation the previous formulae may be used if we set

p
=w= dh
2

32

•Applet-based Experimentation for SE

•Show how the size and shape of the cabinet affects SE
•Show how the size and shape of the slot affects SE
•Learn about the particular behaviour of SE near cabinet
resonances
• Understand the merits of using a larger number of smaller slots
to increase SE
• Assess how the contents of a cabinet affect SE especially near
resonances

33

16
 Semi-empirical formula for SE*:

A simple approximate formula used often to estimate the SE of a

cabinet with a slot is
Êlˆ
SE = 20log
Ë2 ¯
This formula does not take into account the width of the slot or
the dimensions of the cabinet and therefore gives at best very
approximate results. SE curves obtained using this formula are
plotted for comparison with the results of the more sophisticated
model shown here (see numerical experiments that follow).

* H.W. Ott, “Noise Reduction Techniques in Electronic Systems”,

2nd edition, Wiley 1988

34

Using the Applet you can estimate the shielding effectiveness of a

cabinet:

You will need to specify the following-

•dimensions of the cabinet
•dimensions of the slot
•position of the output point z (SE will be different depending on
where the field is measured inside the box

See an example of this applet

in the next slide!

35

17
 36

Completion of this exercise should have given you an insight

into the following:

•the way in which cabinet size and shape affect SE

•the way in which slot size and shape affect SE
•the frequencies at which SE is at its lowest
•the configuration of slots that gives maximum SE
•effect of loading inside the cabinet on SE
•practically achievable values of SE at different frequencies
•distribution of field inside the cabinet

37

18
 APPENDIX: Formulae for Zocs

Formulae for the characteristic impedance of a coplanar

microstrip line may be found in , “Microstrip Lines and Slotlines”,
K.C. Gupta, R. Garg, I. J. Bahl, Artech House,1979 (chapter 7).
They are summarised below:
Z ocs = 120p K ( we / b) / K ¢ ( we / b)
Where, K and K’ are elliptic integrals and we is the effective width
5t È Ê 4p w ˆ ˘
we = w - ÍÎ1 + ln Ë t ¯ ˙˚
4p
Approximate formula: -1
È Ê 1 + 4 1 - ( w / b )2 ˆ ˘
2Í
Z ocs = 120p ln Á 2 e
˜˙
Í ÁË 1 - 4 1 - ( w / b )2 ˜¯ ˙
Î e ˚
for we < b / 2
38

FURTHER READING:

1. “Shielding effectivenessof a rectangular enclosure with a

rectangular aperture”, M.P. Robinson et al, Electronics
Letters, 15 Aug. 1996, Vol.32, No 17, pp.1559-1560
2. “Analytical evaluation of the shielding effectiveness of
enclosures with apertures”, M.P. Robinson et al, IEEE
Trans. on EMC, Vol. 40, No 3, 1998, pp.240-248
3. “Assessment of the shielding effectiveness of a real
enclosure”, R. De Smedt et al, Int. Symp. On EMC, Sept.
14-18, Rome, Italy, pp. 248-253
4. “Numerical and experimental study of the SE of a metallic
enclosure”, F. Olyslager et al, IEEE Trans. On EMC, Vol.
41, No 3, 1999, pp. 202-213

39

19
 ELECTROMAGNETIC EMISSIONS

•Introduction and Aims

•General Objectives
•Basic Concepts
•Wire Interconnects as Radiating Antennas
•Applet-based Experimentation for Emissions
•Further Reading

40

•Introduction and Aims

A basic electromagnetic interaction (EM) affecting EMC/SQ is
when signals on wire interconnects or other components
generate fields which couple to adjacent circuits or which
propagate by radiation over large distances to couple to other
circuits.
Depending on the magnitude and spectral content of these
radiated fields circuits may malfunction and/or be permanently
damaged.
Investigations into the level of radiated fields from circuits are
described under the term emission studies.
The reverse problem whereby a circuit is the victim to EM energy
is referred to as a susceptibility/immunity study.
In this unit we focus on emission studies.

41

20
Radiation of EM energy from a wire interconnect may be studied
in connection with :
•impact on adjacent wires/circuits
•general pattern of radiated fields
The first case is normally studied under the heading of cross-talk
(implying near-filed coupling described by mutual
capacitance/inductance). It is relevant to intra-system EMC.
The second case implies radiation some times over large
distances and therefore near-field and far-field radiation from
circuits acting very much like antennas. It is relevant to inter-
system EMC.
Both processes are important and often the boundaries between
them are not easy to establish.
However, the methodology of dealing with these two cases is
different and hence it is profitable to tackle each case separately.
In this unit we deal with the second case of general radiated field
patterns. 42

The central aim of this unit is to:

Understand the radiation of EM fields from wire interconnects and

calculate, in simple cases,the radiated field patterns.

voltages and
currents
flowing in the
interconnect
I
Radiated
EMI

Wire interconnect

43

21
•General Objectives

• establish the basics for understanding radiated emissions from

simple wire interconnects

•study the patterns of radiation from interconnects

•study the impact of line length, configuration, presence of
conducting planes and of terminations

•Discuss emissions from more complex configurations

44

•Basic Concepts
•A simple wire radiator which can help us understand the
behaviour of more complex radiators is the very short dipole.
This radiator is often referred to also as a Hertzian dipole. The
length of this radiator is ∆l and must be much smaller than the
wavelength λ (typically <λ/50).

z P(r,θ,φ) Er Observation point

θ (polar coordinates)
+Εφ
and electric field
r Eθ components.
∆l I y

φ Current along the very

x short dipole is assumed
constant and equal to I.
45

22
The field components at a point a distance r away from a very
short dipole are given by the formulae:

jωµ e− jβ r  1 1 
Eϑ = ( I ∆l ) sin ϑ 1 + +
4π r  j β r ( j β r ) 2 
jωµ e− jβ r  1 1 
Er = ( I ∆l ) cosϑ  + 2
2π r  jβ r ( jβ r) 
Eϕ = 0

H r = Hϑ = 0
( I ∆l ) e − j β r  1
Hϕ = sin ϑ  j β + 
where, β = 2π
4π r  r
λ
46

We see that emissions, even from this simple structure display

complex behaviour, depending on r and θ. Also several terms
appear which vary as 1/r, 1/r2, 1/r3.
At large distances (several wavelengths) only the 1/r terms
remains and the emitted field has practically only two non-zero
components Eθ and Hφ. We are then at the far-field region.
− jβ r
β ( I ∆l ) e
Eϑ jη sin ϑ
4π r
β ( I ∆l ) e − j β r
Hϕ j sin ϑ
4π r
where, η ≡ 377Ω
Intrinsic impedance of free space

47

23
In the far-field the radiated power density is:

2
Eϑ (r ,ϑ ,ϕ )
2
η β ( I ∆l ) (sin ϑ ) 2
Wr = = ,W
2η 2 4π r2 m2
The radiation intensity U defined below is:
 η β ( I ∆l ) 2 
U ≡ r Wr = 
2
 (sin ϑ )
2
,W
 2 4π  unit solid angle

= U pk (sin ϑ ) 2
A plot of the U/Upk is shown next valid for any angle φ.

48

Radiation pattern for

very short dipole
ϑ
1 P
φ=const.

I
U 10
n

th
Normalised radiation
intensity at point P, U (nϑ ) / U pk = (sin ϑ ) 2
independent of φ.
49

24
•Wire Interconnects as Radiating Antennas
The voltage and current distribution on an open-circuit
transmission line is similar to that found on open-ended antennas.
It therefore follows that we can learn a lot about emissions from
wire interconnects by studying the properties on antennas.
We will do this first to gain a broad appreciation of the emission
properties of wires before looking at systematic computer-based
ways of computing emissions.

∼ Antenna
types
Open-ended antenna Travelling-wave antenna
current distribution is a current distribution can be
standing wave pattern a travelling wave pattern

50

•A standing wave pattern can be constructed as the

superposition of travelling waves propagating in opposite
directions.
•In a travelling wave antenna where there is a single travelling
wave, the amplitude of the wave is constant and the phase is
linearly varying.
•In an open-ended (resonant) antenna the amplitude varies but
the phase is constant.
•The pattern of emission depends on the mix of travelling waves
on the radiating structure.

51

25
 The proximity of current carrying conductors
(interconnects) to other objects also affects the emission
patterns. As an example we examine the simple but
practical case of a conductor above a ground plane. A good
insight may be gained by applying image theory to account
for the impact of the ground plane.
We can distinguish two cases: A conductor perpendicular to
the ground plane (Vertical Polarisation-VP), and a conductor
parallel to the ground plane (Horizontal Polarisation-HP).
Imaging in its case is different
VP VP
HP HP
air air
air Image currents
ground

52

We can see that the field at any point is made out of TWO
components: one from the original current and the other from
its image.The two component may combine constructively
(max emission) or destructively (min emission). It depends on:
•direction of current at the image relative to the conductor
current). We note that for VP currents are in the same
direction, while for HP currents are in opposite directions.
•the difference in electrical distance between the observation
point and the conductor and its image. If the difference in
physical distance between these two paths is d then the
electrical distance is

2π
d , λ is the wavelength
λ

53

26
The strength of the emitted field at the observation point will
therefore depend on whether we have VP or HP and on the
frequency as it affects directly electrical distance and therefore
phase. This explains why in EMC measurements we do height
scans at each frequency etc.
In complex practical systems it can be difficult to predict
emissions without resort to computational models. However, in
order to get a better understanding, we will present here three
different models of increasing levels of complexity
•emissions from single wires where there is a mix of forward and
backward travelling current waves
•emission from wires driven by asymmetrically placed sources
•emissions from complete circuits where the current is known
from numerical or other studies

54

Emissions from single wires where there is a mix of forward and

backward travelling current waves

The configuration we examine

is a wire with forward and
backward waves a shown. We Observation
plot the radiation pattern. point in the far
field region

ϑ
IF

IB

Forward propagating current wave IF

Backward propagating current wave IB
55

27
 •Only forward wave (IB=0)
•Ratio of wire length to
105 97.5 90 82.5 75
wavelength is 5
0.298
112.5 0.3 67.5
120 60
127.5
0.27
0.24
52.5 •Maximum radiation in the
forward direction at about 22
135 45
0.21
142.5 37.5

degrees
0.18
150 30
0.15
157.5 0.12 22.5

165 0.089 15
0.06
172.5 7.5
0.03
E 0
n 180 0 0

187.5 352.5

195 345

202.5 337.5

210 330

217.5 322.5

225 315
232.5 307.5
240 300
247.5 292.5
255 262.5 285
270 277.5
th
n

56

•As before,but forward and

97.5 90 82.5
backward current waves
105 75

120
112.5 0.31
0.28
67.5
60
are equal
0.309

127.5 52.5
0.25
135 45
0.22
142.5 37.5
0.19
150 30
0.15
157.5 0.12 22.5

165 0.093 15
0.062
172.5 7.5
0.031
E 0
n 180 0 0

187.5 352.5

195 345

202.5 337.5

210 330

217.5 322.5

225 315
232.5 307.5
240 300
247.5 292.5
255 262.5 285
270 277.5
th
n

57

28
 105 97.5 90 82.5 75 •As before, but backward
0.304
112.5 0.3 67.5

127.5
120
0.27
60
52.5
current is 50% of the
135
0.24
0.21
45 forward current
142.5 37.5
0.18
150 30
0.15
157.5 0.12 22.5

165 0.091 15
0.061
172.5 7.5
0.03
E 0
n 180 0 0

187.5 352.5

195 345

202.5 337.5

210 330

217.5 322.5

225 315
232.5 307.5
240 300
247.5 292.5
255 262.5 285
270 277.5
th
n

58

Emission from wires driven by asymmetrically placed sources

The problem we tackle here has two aspects (see ref. [3]):
• first, we work out the current distribution along a wire driven
by a sinusoidal source anywhere along its length
•second, based on this current distribution, we work out the
emitted field

radius=a
z= We can then plot I(z) and E(θ)

I(z)

V0
∼ z = zs E(θ)
r0

z=0

59

29
 3
2.701
2.63

2.25
a / = 10−4
zs = 0.33
I ( z) mod
n
1.88

k = 15
1.5
II
k

in mA 1.13

V0 = 1.0 Volts
0.75

0.38

0 90
0 0.0353
0.035
0 0.2 0.4 0.6 0.8 1 120 60
0.0309

z/
0.01 zn , zz 1
n k 0.0265
0.0221
150 30
0.0177
0.0132

k = 3.14 Eϑ , VEthetan
0.0088
0.0044
0
m 180 0 0

= 0.6m
r0 = 3m 210 330

240 300

270
theta
n

60

Emissions from complete circuits where the current is known

from numerical or other studies

E n ( r ,ϑ , ϕ ) E = ∑ En
n

If the current distribution(CM and DM) is

I n ( xn , yn , zn ) known, then:
( r ,ϑ , ϕ ) •separate wires into very short segments
•from each segment calculate emitted
field (very short dipole formula)
•use superposition to find total emitted
field

61

30
•Applet-based Experimentation for Emissions

See an example of
this applet in the
next slide!

62

63

31
Completion of this exercise should have given you an insight
into the following:

•the way in which terminations affect emission

•the way in which line length and spacing affect emissions
•the directional patterns of emission from interconnects
•the impact of ground planes on emissions

64

•FURTHER READING

1. “Analysis of Multiconductor Transmission Lines”, C. R.

Paul, Wiley 1994, (chapters 4,5)
2. “Principles and Techniques of Electromagnetic
Compatibility”, C. Christopoulos, CRC Press 1995,
(chapters 7,8)
3. “EMC Analysis Methods and Computational Models”, F.
M. Tesche, M. V. Ianoz and T. Karlsson, Wiley 1997,
(chapter 4)
4. “Antenna Theory: Analysis and Design”, C A Balanis,
Wiley 1997 2nd Edition (Chapter 10)
5. “Control and Measurement of Unintentional EM
Radiation”, W Scott Bennett, Wiley 1997

65

32
 Electromagnetic Immunity

•Introduction and Aims

•General Objectives
•Basic Concepts
•Model Formulation
•Models and Applet-based
experimentation for Immunity
•Further Reading

66

•Introduction and Aims

A basic electromagnetic interaction (EM) affecting EMC/SQ is
when an EM field couples to wires (i.e. induces voltages/currents
on wire interconnects between circuits).
Depending on the magnitude and spectral content of these
induced signals circuits may malfunction and/or be permanently
damaged.
Investigations into the level of induced signals and the likely
behaviour of circuits are variously described as susceptibility or
immunity studies.
The reverse problem whereby the circuit emits EM energy is
referred to as emission study.
In this unit we focus on susceptibility/immunity studies.

67

33
Coupling of EM energy into a wire interconnect may be caused by:
•adjacent wires/circuits
•EM fields from distant wires/circuits
The first case is normally studied under the heading of cross-talk
(implying near-filed coupling described by mutual
capacitance/inductance). It is relevant to intra-system EMC.
The second case implies interaction of circuits with an incident
field (often a plane wave) representing far-field radiation from
distant circuits acting very much like antennas. It is relevant to
inter-system EMC.
Both processes are important and often the boundaries between
them are not easy to establish.
However, the methodology of dealing with these two cases is
different and hence it is profitable to tackle each case separately.
In this unit we deal with the second, far-field case.

68

The central aim of this unit is to:

Understand the coupling of external incident EM fields into wire

interconnects and calculate, in simple cases, induced voltages
and currents at circuit terminals.

Induced
voltages
and I
currents Source
of EMI

Wire interconnect

69

34
•General Objectives

• establish the basic modelling methodology for understanding

field-to-wire coupling

•study the impact of field polarisation and propagation direction

on coupling

•study the impact of line length, configuration, presence of

conducting planes and of terminations

•establish basic guidelines to reduce field-to-wire coupling

70

•Basic Concepts
•A simple type of EM wave which can help us understand the
behaviour of more complex waves is the uniform plane wave.
For this type of wave the electric E and magnetic H field
components are perpendicular to each other and to the
direction of propagation k.
x
E
In this example the electric
field has only an x-
component, the magnetic
field a y-component and the
z propagation direction is
k along z.

H
y
71

35
• Polarisation of the electric field refers to the direction of the
electric field relative to the configuration of the line (e.g. electric
field vector parallel to the line, transverse to the line, or, in some
other direction). Physical intuition suggests that polarisation
affects the strength of coupling.

• Direction of propagation refers to the direction in which EM

energy is transported in space by the wave. Clearly, the direction
of incidence of EM energy on the line will affect coupling. See
below some simple wave propagation directions for exciting a
line :
Arrows show direction of propagation k:

Broadside excitation
line E ƒ
Endfire excitation

Sidefire excitation

72

• Line terminations refers to the loads at the two ends of a wire

interconnect. As an EM waves impinges on the line the induced
currents and voltages and wave reflections will depend on the
terminations

• TEM conditions in wire interconnects refer to the situation where

the electric and magnetic field between the wires have only
transverse components to the direction of propagation (strictly
true only for lossless lines)

•Conducting planes in the vicinity of the interconnect, or as a part

of it, may affect coupling e.g. by causing reflections to incident
waves.

73

36
 •Model Formulation
Formulation of a mathematical model of field-to-wire coupling:
The basic strategy is to supplement the well known transmission
line (TL) equations with additional source terms which represent
coupling to the external field.

H
x
VNE VFE Incident field
k
TL d E

z
l There are at least three possible
(equivalent) formulations of the
y source terms to account for
Wire interconnect coupling to the field!

74

In an often used formulation, the total voltage V and current I

are described, as shown, with source terms dependent on the
incident electric field in x-direction and incident magnetic field
in y-direction. There are however other, equivalent, modelling
possibilities.
x H
VNE VFE
k
TL d
E
z
l

y KCL KVL
d d
dI dV
+ jw CdV = - jw Cd Ú E xi dx + jw Ld I = jw Ú B iy dx
dz dz
0 0
75

37
The main alternative model formulations are in terms of source
terms depending on the incident, electric field only, or, the
magnetic field only.
For a critical discussion of the various models and their
equivalence see:
“On the contribution of the EM field components in field-to
transmission line interaction”
C.A. Nucci and F. Rachidi, IEEE Trans. On EMC, 37, No. 4, Nov.
1995, pp. 505-508.

The model as shown is formulated in the frequency-domain

(time is not the independent variable, harmonic excitations of
frequency f are assumed). If a pulsed field is applied it must
first be analysed into its frequency components, the line
response to each component found by solving the previous
equations, and the results combined to obtain the total
response (only possible for linear systems).

76

Alternatively, the model may be formulated in the time-domain to

obtain a more direct solution for the effects of pulsed fields on the
line which is also valid for general non-linear systems.

Both, frequency- and time-domain approaches are used in

formulating models which can be solved either analytically (for
simple cases) ,or, numerically.

Analytical solutions are possible for many cases especially at low-

frequencies where neglecting transmission line effects simplifies
the equations. Although low-frequency results cannot be used at
high frequencies they nevertheless provide an insight into basic
coupling mechanisms which is invaluable to the designer.

77

38
 Numerical solutions are obtained by dividing the line into many
small segments, each smaller than a wavelength, and inserting in
each segment voltage and current sources which represent the
coupling to the electric and magnetic field components
respectively, as explained earlier. This process is illustrated
below:
Source terms
Ld∆z Vs∆z d
+
V s ( z ) = jw B iy ( x , z )dx
Ú
Is∆z 0
Cd∆z
d
∆z I s ( z ) = - jw Cd Ú E xi ( x , z )dx
Parameters of the TL segment 0

78

There are THREE types of solutions to the coupling models:

Simple model
This is a low-frequency model where all excitation sources are
lumped together, the inductance and capacitance of the line is
neglected and the near-end and far-end impedances are assumed
to be approximately equal to the characteristic impedance of the
line. This model is sketched out below.

Vsrc
+

VNE Rs Isrc Rl VFE

79

39
TEM model
This a model valid up to medium frequencies and it is based on
solving the TL equations assuming TEM approximation (line
length much larger than separation, no losses). This solution can
be done in either the frequency or time domains. Here, the
frequency-domain solution is used.

High-frequency model
A high-frequency field model valid for all frequencies including
lines with substantial losses and arbitrary separation. Here a
solution based on the Method of Moments (MoM) must be used.
This model is beyond the scope of this presentation.

80

We now look at some specific examples to get some intuitive

understanding and quantitative information regarding coupling to
wires.
There are three basic interconnect configurations:
•A parallel wire interconnect
•A wire-above-ground interconnect
•A parallel wire interconnect above ground
For each configuration we apply one or more of the three different
models described (Simple, TEM and High-frequency models).
Examples of sidefire, broadside and endfire excitations are
studied.

81

40
 •Models and Applet-based Experimentation
for Immunity

• Show how the length, spacing,and line terminations affect

induced voltages
•Establish the range of validity of the different models
•Learn about the inaccuracies of coupling predictions based on
the assumption of electrically very short lines
•Study the behaviour of an electrically long line that radiates
substantially (requires high-frequency model)
•Compare the severity of coupling due to different excitation
modes (sidefire, broadside and endfire). Establish worst case and
suggest possible remedies.

82

objectives (cont.):

•Compare coupling for parallel wire, wire-above-conducting

plane, and parallel wires above conducting plane lines
• Establish the circumstances when a full-field solution for the
interconnect configuration is necessary
• Based on the numerical experiments you have done, suggest
broad design guidelines to minimise coupling from external fields
to wire interconnects

83

41
 SIDEFIRE Excitation:
The configuration studied is shown below. The line length is
and the spacing is d. The near-end (NE) and far-end (FE)
quantities are shown, together with the corresponding
terminations Zs and Z .

VNE Zs d Z VFE
z

y
k̂
Ei sidefire
Hi⊗
84

For this excitation the electric filed has only a z-component and
the magnetic field a y-component. Using these field components
the equivalent sources are calculated and inserted into the field-
to-wire coupling model described earlier.
Basic transmission line theory is then used to obtain solutions for
the terminal voltages at the line terminations.
The following information is required:
•magnitude of the electric field component E0 .The magnetic field
need not be explicitly supplied as for a plane wave
H = E /h
where η is the intrinsic impedance of the medium. In air,

m0
h = h0 = e 0 = 377W
85

42
 • the frequency of the excitation f. This permits the calculation of
the line phase constant,
b = 2p / l = w / v p
• vp is the velocity of propagation on the line. We assume a
lossless line.
• the geometrical and material properties of the line. These allow
the calculation of the per unit length capacitance and inductance
of the line, its characteristic impedance, velocity of propagation
etc.
• the impedance of line terminations. For simplicity, we assume
that the impedances at terminations are resistive.

In the next slides we summarise the formulae used and in the

WEB-based exercises for sidefire coupling

86

Simple model for sidefire coupling on parallel wire interconnect:

Zs È sin ( b d / 2) - j ( b d / 2) ˘
V NE = - - j (d ) b E0 e
Z s + Z ÍÎ ( b d / 2) ˙
˚

Z
VFE =
Zs + Z
[as above ]
In these formulae :

j = -1
b = 2p / l
V NE ,VFE are phasors ( E = E0 + j 0)
87

43
Advantages of the simple model:
•very easy to use, results obtained quickly
•clear physical understanding of parameters affecting coupling

Limitations of the simple model:

•line must be electrically very short (line length<<λ)
•excitation sources lumped together
•line L and C are neglected
•impedance at line terminations must be of the same order as
the line characteristic impedance
•re-radiation from the line is neglected

88

SIDEFIRE Excitation:
The configuration studied is shown below. The line length is
and the height is h. The near-end (NE) and far-end (FE)
quantities are shown, together with the corresponding
terminations Zs and Z .
Wire-above conducting
x plane configuration

VNE Zs h Z VFE
z

y Conducting plane
k̂
Ei sidefire
Hi ⊗
89

44
 Simple model for sidefire excitation in an wire-above-conducting-
plane configuration:

Zs È sin( b h) ˘
V NE = - Í j 2 ( h ) E0 b ˙
Zs + Z ÍÎ ( b h) ˙˚

Z
VFE =
Zs + Z
[as above ]

90

TEM model for the sidefire excitation of a parallel-wire

interconnect :

E sin( b d / 2) È Z ˘
V NE = Z s 0 de - j b d / 2 ( b d / 2) Í [cos( b ) - 1] + j sin( b )˙
D Î Zc ˚

E0 - j b d / 2 sin( b d / 2) È Z s ˘
VFE = - Z
D
de
( b d / 2) ÍÎ Z c
[cos( b ) - 1] + j sin( b )˙
˚
where,

Ê Z Z ˆ
D = cos( b )( Z s + Z ) + j sin( b ) Á Z c + s ˜
Ë Zc ¯

91

45
 TEM model for the sidefire excitation of a wire-above-conducting-
plane interconnect :

E sin( b h) È Z ˘
V NE = - Z s 2h 0
D ( b h) ÍÎ Z c
[cos( b ) - 1] + j sin( b )˙
˚

E sin( b h) È Z s ˘
VFE = Z 2h 0
D ( b h) ÍÎ Z c
[cos( b ) - 1] + j sin( b )˙
˚

where,
Z Z
D = cos( b )( Z s + Z ) + j sin( b )( Z c + s )
Zc

92

Sidefire excitation of a
parallel-wire and wire-
above-conducting-plane
See an example interconnects.
of this applet in
the next slide!

Find out how the length, spacing

and line terminations affect the
near- and far-end voltages.
How do the simple and TEM
models compare?

93

46
94

95

47
 Broadside Excitation:
The configuration studied is shown below. The line length is
and the spacing is d. The near-end (NE) and far-end (FE)
quantities are shown, together with the corresponding
terminations Zs and Z .

VNE Zs d Z VFE
z

y
Ei
broadside
k̂ ⊗
Hi
96

For this excitation, the electric field has only an x-component and
the magnetic field a z-component. The same approach and
notation as for the sidefire excitation is adopted.
Three models are employed and each has the same advantages
and limitations as for the sidefire case.
You should now look at the predictions of these models and
obtain results to compare with the sidefire excitation.

Simple model for the broadside excitation of a parallel-wire line :

Zs Z
V NE = VFE =
Zs + Z
[ - jw Cd (d ) E0 ]

97

48
 BROADSIDE Excitation:
The configuration studied is shown below. The line length is
and the height is h. The near-end (NE) and far-end (FE)
quantities are shown, together with the corresponding
terminations Zs and Z .
Wire-above conducting
x plane configuration

VNE Zs h Z VFE
z

y Ei Conducting plane

broadside
k̂ ⊗
Hi
98

Simple model of the broadside excitation of a wire-above-

conducting-plane interconnect :

Z Z
V NE = VFE = s
Z s +Z
[ - jw Cd 2( h ) E0 ]

99

49
 TEM model for the broadside excitation of a parallel-wire
interconnect :

dE0 È Z ˘
V NE = - Z s Í cos( b ) - 1 + j sin( b )˙
D Î Zc ˚
dE0 È Z ˘
VFE = Z Í 1 - cos( b ) - j s sin( b )˙
D Î Zc ˚
where,

Z Z
D = cos( b )( Z s + Z ) + j sin( b )( Z c + s )
Zc

100

TEM model for the broadside excitation of a wire-above-conducting-

plane interconnect :
2hE0 È Z ˘
V NE = - Z s Í cos( b ) - 1 + j sin( b )˙
D Î Zc ˚

2hE0 È Z ˘
VFE = Z Í 1 - cos( b ) - j s sin( b )˙
D Î Zc ˚
where,
Z Z
D = cos( b )( Z s + Z ) + j sin( b )( Z c + s )
Zc

Now try
the applet!

101

50
 ENDFIRE Excitation:
The configuration studied is shown below. The line length is
and the spacing is d. The near-end (NE) and far-end (FE)
quantities are shown, together with the corresponding
terminations Zs and Z .

VNE Zs d Z VFE
z

y
Ei
endfire
Hi
k̂ 102

For this type of excitation the electric field has an x-component

only and the magnetic field a y-component. The relevant models
are given below:
Simple model of an endfire excitation of an interconnect:
Zs Z Z
V NE = - Vsrc + s I
Z s + Zl Z s + Z src
Z Zs Z
VFE = V src + I
Zs + Z Z s + Z src

where,
Vsrc = j (d ) b E0e - j b / 2 For a parallel-wire interconnect

I src = - jw Cd (d ) E0e - j b / 2
For a wire-above-conducting-plane interconnect replace
d by 2h in the formulae for Vsrc and Isrc.
103

51
 TEM model of endfire excitation of wire interconnect:
For parallel-wire
dE0 È Z ˘
V NE = - jZ s sin( b ) Í1 + ˙
interconnect
D Î Z c˚
dE0 È Z ˘
VFE = Z Í 1 - s ˙ [1 - cos(2 b ) + j sin(2 b )]
2D Î Zc˚
where,
Ê Z Z ˆ
D = cos( b )( Z s + Z ) + j sin( b ) Á Z c + s ˜
Ë Zc ¯
For wire-above-conducting-plane interconnect
replace d by 2h in the above formulae.

104

Completion of these exercises should have given you an insight

into the following:

•the way in which line length affects coupling (i.e. resonances)

•the way in which the loop area of the line (d ) affects coupling
•in what way the three excitations are different and whether there
is any merit in configuring the line in any particular way if the
primary EMI excitation threat is known
•the influence of terminations on severity of coupling for the
different excitations
•worst case coupling and best configuration/excitation for
maximum immunity (design guidelines)
•range of applicability of the three models
Simple model (low frequency), TEM model (medium frequency), High-frequency
model

105

52
•Further Reading

1. “Analysis of Multiconductor Transmission Lines”, C. R.

Paul, Wiley 1994, (chapter 7)
2. “Principles and Techniques of Electromagnetic
Compatibility”, C. Christopoulos, CRC Press 1995,
(chapter 7)
3. “EMC Analysis Methods and Computational Models”, F.
M. Tesche, M. V. Ianoz and T. Karlsson, Wiley 1997,
(chapter 7)

106

CONCLUDING REMARKS

•Many important EMC phenomena can be

studied by simple models
•Applets can be used to relieve the student from
excessive calculation and to illustrate trends in
design
•Applet based material offers a virtual laboratory
accessible from anywhere via the internet
•We plan to enhance and extend this work to
provide a sophisticated and effective learning
environment
107

53