TLP3616

TOSHIBA Photocoupler GaAs Ired & Photo-Triac

Tentative
TLP3616
Triac Drivers
Unit: mm
Programmable Controllers
AC-Output Modules
Solid-State Relays

The TOSHIBA TLP3616 consists of a photo-triac optically coupled to a

gallium arsenide infrared-emitting diode in an 8-lead plastic DIP
package.

• Peak off-state voltage : 600 V (min.)

• Trigger LED current : 10 mA (max.)
• On-state current : 1.2 Arms (max.)
• Isolation voltage : 2500 Vrms (min.)
• UL recognized :UL1577, File No. E67349

TOSHIBA 11-10J1
Pin Configuration (top view) Weight: 0.59 g(Typ.)

1 8

3 6

4 5

1: Cathode
2: Anode
3: Cathode
4: Cathode
5: Triac gate
6: Triac T1
8: Triac T2

1 2005-01-11
 TLP3616
Maximum Ratings (Ta = 25°C)

Characteristic Symbol Rating Unit

Forward current IF 50 mA

Forward current derating (Ta ≥ 53°C) ∆IF / °C −0.7 mA / °C

LED

Peak forward current (100-µs pulse, 100 pps) IFP 1 A

Reverse voltage VR 5 V
Junction temperature Tj 125 °C
Off−state output terminal voltage VDRM 600 V
Ta = 25°C 1.2
On−state RMS current IT(RMS) A
Ta = 40°C 1.0
Detector

On−state current derating (Ta ≥ 40°C) ∆IT / °C −13 mA / °C

Peak current from snubber circuit
ISP 2 A
(100-µs pulse, 120 pps)
Peak nonrepetitive surge current (50 Hz, peak) ITSM 10 A
Junction temperature Tj 115 °C
Storage temperature range Tstg −40~125 °C
Operating temperature range Topr −20~80 °C
Lead soldering temperature (10 s) Tsol 260 °C
Isolation voltage (AC, 1 min., R.H. ≤ 60%) (Note) BVS 2500 Vrms

Note: Device considered a two−terminal device: Pins 1, 2, 3 and 4 are shorted together, and pins 5, 6 and 8 are
shorted together.

Recommended Operating Conditions

Characteristic Symbol Min Typ. Max Unit

Supply voltage VAC ― ― 240 Vac

Forward current IF 15 20 25 mA
Peak current from snubber circuit ISP ― ― 1 A
Operating temperature Topr −20 ― 80 °C

2 2005-01-11
 TLP3616
Individual Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V

LED

Reverse current IR VR = 5 V ― ― 10 µA
Capacitance CT V = 0, f = 1 MHz ― 30 ― pF
Peak of-state current IDRM VDRM = 600 V, Ta = 110°C ― ― 100 µA

Peak on−state voltage VTM ITM = 1.2 A ― ― 3.0 V

Detector

Critical rate of rise of

dv / dt Vin = 240 Vrms (Fig. 1) ― 500 ― V / µs
off−state voltage

Critical rate of rise of Vin = 240 Vrms, IT = 0.5 Arms

dv / dt (c) ― 5 ― V / µs
commutating voltage (Fig. 1)

Coupled Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Trigger LED current IFT VT = 6 V ― ― 10 mA

Isolation Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Capacitance
CS VS = 0, f = 1 MHz ― 1.5 ― pF
(input to output)
Isolation resistance RS VS = 500 V, R.H. ≤ 60% 5×1010 1014 ― Ω
AC, 1 minute 2500 ― ―
Vrms
Isolation voltage BVS AC, 1 second, in oil ― 5000 ―
DC, 1 minute, in oil ― 5000 ― Vdc

Fig. 1: dv / dt test circuit

Rin 5 V, VCC
2 8
VCC 120Ω
3 Vin 0V

6
RL dv / dt(c) dv / dt
5

3 2005-01-11
 TLP3616
IT(RMS) – Ta

1.2
IF – Ta
100 1.0

(A)
80
Allowable forward current

0.8

On-state current IT(RMS)

60
IF (mA)

0.6

40 0.4

20 0.2

0 0
-20 0 20 40 60 80 100 120
-20 0 20 40 60 80 100 120
Ambient temperature Ta (°C) Ambient temperature Ta (°C)

IFP – DR IF – VF
5000 100
Pulse width ≤ 100 µs Ta = 25°C
3000
Ta = 25°C 50
30
Allowable pulse forward current

(mA)

1000

500 10
Forward current IF
IFP (mA)

300
5
3
100

50 1

30 0.5
0.3
10
-3 -2 -1 0
3 10 3 10 3 10 3 10
0.1
0.6 0.8 1.0 1.2 1.4 1.6 1.8
Duty cycle ratio DR
Forward voltage VF (V)

ΔVF/ΔTa – IF IFP – VFP

1000
-2.8
500
coefficient ΔVF / ΔTa (mV / °C)

(mA)

300
Forward voltage temperature

-2.4
IFP

100
-2.0
Pulse forward current

50
-1.6 30

-1.2
10
Pulse width ≤ 10 µs
-0.8 5 repetitive frequency
3 = 100 Hz
-0.4 Ta = 25°C
0.1 0.3 0.5 1 3 5 10 30 50
0
0.6 1.0 1.4 1.8 2.2 2.6 3.0
Forward current IF (mA)
Pulse forward voltage VFP (V)

4 2005-01-11
 TLP3616

5 2005-01-11
 TLP3616

RESTRICTIONS ON PRODUCT USE 030619EBC

• The information contained herein is subject to change without notice.

• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..

• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.

• The products described in this document are subject to the foreign exchange and foreign trade laws.

• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.

• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.

6 2005-01-11