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    Silicon Epitaxial Planar Transistor 2SC945: Galaxy Electrical

    Uploaded by

    Ari Ramwan
    This document provides specifications for the BL Galaxy Electrical 2SC945 silicon epitaxial planar transistor. It is a high voltage, high current transistor suitable for audio frequency amplification. Key parameters include a collector-base voltage rating of 60V, collector current of 150mA, gain range of 130-400, and transition frequency of 150MHz. The transistor comes in a surface mount SOT-23 package.

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    © All Rights Reserved
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    Silicon Epitaxial Planar Transistor 2SC945: Galaxy Electrical

    Uploaded by

    Ari Ramwan
    41 views5 pages
    This document provides specifications for the BL Galaxy Electrical 2SC945 silicon epitaxial planar transistor. It is a high voltage, high current transistor suitable for audio frequency amplification. Key parameters include a collector-base voltage rating of 60V, collector current of 150mA, gain range of 130-400, and transition frequency of 150MHz. The transistor comes in a surface mount SOT-23 package.

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    2sc945_galaxy

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    This document provides specifications for the BL Galaxy Electrical 2SC945 silicon epitaxial planar transistor. It is a high voltage, high current transistor suitable for audio frequency amplification. Key parameters include a collector-base voltage rating of 60V, collector current of 150mA, gain range of 130-400, and transition frequency of 150MHz. The transistor comes in a surface mount SOT-23 package.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    41 views5 pages

    Silicon Epitaxial Planar Transistor 2SC945: Galaxy Electrical

    Uploaded by

    Ari Ramwan
    This document provides specifications for the BL Galaxy Electrical 2SC945 silicon epitaxial planar transistor. It is a high voltage, high current transistor suitable for audio frequency amplification. Key parameters include a collector-base voltage rating of 60V, collector current of 150mA, gain range of 130-400, and transition frequency of 150MHz. The transistor comes in a surface mount SOT-23 package.

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    © All Rights Reserved
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    BL Galaxy Electrical Production specification

    Silicon Epitaxial Planar Transistor 2SC945

    FEATURES
    Pb
    z High voltage and high current.
    Lead-free
    z Excellent hFE linearity.
    z Low noise.

    APPLICATIONS
    z Audio frequency amplifier.
    SOT-23
    ORDERING INFORMATION
    Type No. Marking Package Code

    2SC945 CR SOT-23

    MAXIMUM RATING @ Ta=25℃ unless otherwise specified


    Symbol Parameter Value Units

    VCBO Collector-Base Voltage 60 V

    VCEO Collector-Emitter Voltage 50 V

    VEBO Emitter-Base Voltage 5 V

    IC Collector Current -Continuous 150 mA

    PC Collector Dissipation 200 mW

    Tj,Tstg Junction and Storage Temperature -55~150 ℃

    ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

    Document number: BL/SSSTC017 www.galaxycn.com


    Rev.A 1
    BL Galaxy Electrical Production specification

    Silicon Epitaxial Planar Transistor 2SC945

    Parameter Symbol Test conditions MIN TYP MAX UNIT

    Collector-base breakdown voltage V(BR)CBO IC=0.1mA,IE=0 60 V

    Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 V

    Emitter-base breakdown voltage V(BR)EBO IE=0.1mA,IC=0 5 V

    Collector cut-off current ICBO VCB=60V,IE=0 0.1 μA

    Collector cut-off current ICEO VCE=50V,IB=0 0.1 μA

    Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA

    VCE=6V,IC=1mA 130 400


    DC current gain hFE
    VCE=6V,IC=0.1mA 40

    Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA 0.3 V

    Base-emitter saturation voltage VBE(sat) IC=100mA, IB=10mA 1 V

    VCE=6V, IC=10mA
    Transition frequency fT 150 MHz
    f=30MHz

    Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 3.0 pF

    VCE=6V, IC=0.1mA
    Noise figure NF 4 10 dB
    f=1kMHz,Rg=10kΩ

    CLASSIFICATION OF hFE(1)
    Rank L H

    Range 130-200 200-400

    Document number: BL/SSSTC017 www.galaxycn.com


    Rev.A 2
    BL Galaxy Electrical Production specification

    Silicon Epitaxial Planar Transistor 2SC945

    TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

    Document number: BL/SSSTC017 www.galaxycn.com


    Rev.A 3
    BL Galaxy Electrical Production specification

    Silicon Epitaxial Planar Transistor 2SC945

    PACKAGE OUTLINE
    Plastic surface mounted package SOT-23

    SOT-23
    Dim Min Max
    A 2.85 2.95
    B 1.25 1.35
    C 1.0Typical
    D 0.37 0.43
    E 0.35 0.48
    G 1.85 1.95
    H 0.02 0.1
    J 0.1Typical
    K 2.35 2.45
    All Dimensions in mm

    SOLDERING FOOTPRINT

    Unit : mm
    PACKAGE INFORMATION

    Device Package Shipping

    2SC945 SOT-23 3000/Tape&Reel

    Document number: BL/SSSTC017 www.galaxycn.com


    Rev.A 4
    www.s-manuals.com

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