EEE332 - Lecture 1
EEE332 - Lecture 1
EEE332 - Lecture 1
Lesson Outcomes
Lecture – 1
Power Electronics
switching characteristic
explain power converter types
BJT 0.5–500 A 0.5 – 100 ms conducts when sufficient base dc-dc circuits, inverters
30–1200 V current is applied
FET 1–100 A 50 – 200 ns conducts when sufficient gate dc-dc circuits, inverters
30–1000V voltage is applied
IGBT 10– > 600 A Faster than BJT similar to BJT with its base power electronics
600–1700 V driven by a FET
SCR 10– > 500 A 1 – 200 ms like a diode after a gate pulse controlled rectifiers
200V–5 kV is applied
GTO similar to SCR similar to SCR conducts with a negative pulse inverters >100 kW
to its gate terminal
TRIAC 2–50 A similar to SCR two SCRs connected in lamp dimmers
200–800 V reverse parallel
The choice of a
particular device
depends on the
voltage, current,
and speed
requirements of
the converter.
Generalized
Power Converters