Location via proxy:   [ UP ]  
[Report a bug]   [Manage cookies]                
Scribd Logo
Upload

Welcome to Scribd!

  • 173 views

    Eb Series Transistors E3150: Shenzhen SY Semiconductors Co. LTD

    Uploaded by

    fabian oroz
    This document provides specifications for the EB series E3150 transistor from Shenzhen SY Semiconductors. The transistor has a maximum collector-base voltage of 700V and collector-emitter voltage of 600V, making it suitable for applications requiring high voltage capability like fluorescent lamps and electronic ballasts. Key electronic characteristics include a saturation voltage of 1.0V or less at 1A collector current and a DC current gain ranging from 5 to 40 depending on collector current and voltage conditions. The transistor comes in a standard TO-220 package.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Eb Series Transistors E3150: Shenzhen SY Semiconductors Co. LTD

    Uploaded by

    fabian oroz
    173 views2 pages
    This document provides specifications for the EB series E3150 transistor from Shenzhen SY Semiconductors. The transistor has a maximum collector-base voltage of 700V and collector-emitter voltage of 600V, making it suitable for applications requiring high voltage capability like fluorescent lamps and electronic ballasts. Key electronic characteristics include a saturation voltage of 1.0V or less at 1A collector current and a DC current gain ranging from 5 to 40 depending on collector current and voltage conditions. The transistor comes in a standard TO-220 package.

    Original Title

    datasheet E3150

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    This document provides specifications for the EB series E3150 transistor from Shenzhen SY Semiconductors. The transistor has a maximum collector-base voltage of 700V and collector-emitter voltage of 600V, making it suitable for applications requiring high voltage capability like fluorescent lamps and electronic ballasts. Key electronic characteristics include a saturation voltage of 1.0V or less at 1A collector current and a DC current gain ranging from 5 to 40 depending on collector current and voltage conditions. The transistor comes in a standard TO-220 package.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    173 views2 pages

    Eb Series Transistors E3150: Shenzhen SY Semiconductors Co. LTD

    Uploaded by

    fabian oroz
    This document provides specifications for the EB series E3150 transistor from Shenzhen SY Semiconductors. The transistor has a maximum collector-base voltage of 700V and collector-emitter voltage of 600V, making it suitable for applications requiring high voltage capability like fluorescent lamps and electronic ballasts. Key electronic characteristics include a saturation voltage of 1.0V or less at 1A collector current and a DC current gain ranging from 5 to 40 depending on collector current and voltage conditions. The transistor comes in a standard TO-220 package.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    You are on page 1of 2

    SY semiconductors

    www.DataSheet4U.com Shenzhen SY Semiconductors Co.，LTD.

    EB SERIES TRANSISTORS E3150


    ●FEATURES：①HIGH VOLTAGE CAPABILITY ②HIGH SPEED SWITCHING ③WIDE SOA
    ●APPLICATION：①FLUORESCENT LAMP ②ELECTRONIC BALLAST

    ●Absolute Maximum Ratings (Tc=25℃) TO-220 NPN

    PARAMETER SYMBOL VALUE UNIT


    Collector–Base Voltage VCBO 700 V
    Collector–Emitter Voltage VCEO 600 V
    Emitter –Base Voltage VEBO 9 V
    Collector Current IC 1.5 A
    Junction Temperature Tj 150 ℃
    Storage Temperature Tstg -65-150 ℃

    ● Electronic Characteristics (Tc=25℃)


    CHARACTERISTICS SYMBOL TEST CONDITION MIN MAX UNIT
    Collector–Base Cutoff Current ICBO VCB=700v 100 µA
    Collector–Emitter Cutoff Current ICEO VCE=600v 250 µA
    Collector–Emitter Voltage VCEO IC=10mA IB=0 600 V
    Emitter –Base Voltage VEBO IE=1mA IC=0 9 V
    Collector–Emitter Saturation
    Vcesat IC=1A IB=0.25A 1.0 V
    Voltage
    Base–Emitter Saturation Voltage Vbesat IC=0.5A IB=0.1A 1.2 V
    VCE=5v IC=1mA 7
    DC Current Gain HFE VCE=5v IC=0.2A 10 40
    VCE=5v IC=1.0A 5

    ●CLASSIFICATION OF HFE
    HFE 15-20 20-25 25-30 30-35

    SY semiconductors 1/2
    www.DataSheet4U.com

    SY semiconductors Shenzhen SY Semiconductors Co.，LTD.

    EB SERIES TRANSISTORS E3150

    SYMBOL Min Nom Max SYMBOL Min Nom Max


    A 3.5 4.5 5.0 L 12.5 13.5 14.5
    B 1.25 1.35 1.5 L1 2.5 3.37 4.5
    B1 0.75 0.85 0.955 D1 5.9 6.5 7.1
    b 0.6 фb 1.2
    c 0.35 0.43 0.55 Q 1.5 2.5 3.5
    D 14.0 15.5 16.5 Q1 2.0 2.6 3.5
    E 9.0 10.0 11.0 Z 3.0 3.8 4.5
    e 2.54

    SY semiconductors 2/2

    You might also like