SPU01N60S5

Preliminary data SPD01N60S5

Cool MOS™==Power Transistor COOLMOS
Power Semiconductors
•=New revolutionary high voltage technology
Product Summary
• Ultra low gate charge
VDS @ Tjmax 650 V
•=Periodic avalanche rated
RDS(on) 6 Ω
• Extreme dv/dt rated
ID 0.8 A
•=Optimized capacitances
P-TO252 P-TO251-3-1
•=Improved noise immunity
•=Former development designation:
SPUx7N60S5/SPDx7N60S5

D,2
Type Package Ordering Code Marking
SPU01N60S5 P-TO251-3-1 Q67040-S4193 01N60S5
SPD01N60S5 P-TO252 Q67040-S4188 01N60S5
G,1
S,3

Maximum Ratings,at Tj = 25 °C, unless otherwise specified

Parameter Symbol Value Unit
Continuous drain current ID A
TC=25°C 0.8
TC=100°C 0.5
Pulsed drain current 1) ID puls 1.6
TC=25°C

Avalanche energy, single pulse EAS 20 mJ

ID = 0.64 A, VDD = 50 V
Avalanche energy (repetitive, limited by Tjmax ) EAR 0.01
ID = 0.8 A , VDD = 50 V
Avalanche current (repetitive, limited by Tjmax ) IAR 0.8 A
Reverse diode dv/dt dv/dt 6 kV/µs
IS =0.8A, VDS<VDSS , di/dt=100A/µs, Tjmax =150°C

Gate source voltage VGS ±20 V

Power dissipation Ptot 11 W
TC=25°C

Operating and storage temperature Tj , Tstg -55... +150 °C

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 SPU01N60S5
Preliminary data SPD01N60S5
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Thermal Characteristics
Thermal resistance, junction - case RthJC - - 11 K/W
Thermal resistance, junction - ambient RthJA - - 75
(Leaded and through-hole packages)
SMD version, device on PCB: RthJA
@ min. footprint - - 75
@ 6 cm2 cooling area 2) - - 50

Static Characteristics, at Tj = 25 °C, unless otherwise specified

Drain-source breakdown voltage V(BR)DSS 600 - - V
VGS = 0 V, ID = 0.25 mA
Gate threshold voltage, VGS = VDS VGS(th) 2.3 3 3.7
ID = 250 µA, Tj = 25 °C
Zero gate voltage drain current, VDS=VDSS IDSS µA
VGS = 0 V, Tj = 25 °C - 0.5 1
VGS = 0 V, Tj = 150 °C - - 50
Gate-source leakage current IGSS - - 100 nA
VGS = 20 V, VDS = 0 V
Drain-source on-state resistance RDS(on) - 5.6 6 Ω
VGS = 10 V, ID = 0.5 A

1current limited by T
jmax
2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm² (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.

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 SPU01N60S5
Preliminary data SPD01N60S5
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance gfs VDS ≥2*ID *RDS(on)max , - 0.75 - S
ID =0.5A

Input capacitance Ciss VGS =0V, VDS =25V, - 100 - pF

Output capacitance Coss f=1MHz - 40 -
Reverse transfer capacitance Crss - 2.5 -
Turn-on delay time td(on) VDD =350V, VGS =10V, - 30 - ns
Rise time tr ID =0.8A, RG=100Ω - 25 -
Turn-off delay time td(off) - 55 82
Fall time tf - 30 45

Gate Charge Characteristics

Gate to source charge Qgs VDD =350V, ID =0.8A - 0.9 - nC
Gate to drain charge Qgd - 2.2 -
Total gate charge Qg VDD =350V, ID =0.8A, - 3.9 5
VGS =0 to 10V

Reverse Diode
Inverse diode continuous IS TC=25°C - - 0.8 A
forward current
Inverse diode direct ISM - - 1.6
current,pulsed
Inverse diode forward voltage VSD VGS =0V, IF =0.8A - 1 1.2 V
Reverse recovery time trr VR =100V, IF=lS, - 570 970 ns
Reverse recovery charge Qrr diF /dt=100A/µs - 0.75 - µC

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 SPU01N60S5
Preliminary data SPD01N60S5
Power dissipation Drain current
Ptot = f (TC ) ID = f (TC )
parameter: VGS ≥ 10 V
SPU01N60S5 SPU01N60S5
12 0.9
W
A

10
0.7
9

8 0.6
Ptot

ID
7
0.5
6
0.4
5

4 0.3

3
0.2
2
0.1
1

0 0
0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160
TC TC

Safe operating area Transient thermal impedance

ID=f (VDS) ZthJC = f (tp )
parameter: D=0.01, TC =25°C parameter : D = tp /T
10 1 SPU01N60S5
10 2 SPU01N60S5

K/W

10 1
tp = 7.6µs

10 µs
Z thJC

10 0
D
/I
ID

10 0
DS
V
) =
on
(
DS

D = 0.50
R

-1
100 µs 10 0.20
-1 0.10
10
0.05
0.02
1 ms 10 -2
single pulse 0.01
10 ms
DC
-2
10 0 1 2 3
10 -3 -7 -6 -5 -4 -3 -2 0
10 10 10 V 10 10 10 10 10 10 10 s 10
VDS tp

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 SPU01N60S5
Preliminary data SPD01N60S5
Typ. output characteristic Drain-source on-resistance
ID = f (VDS) RDS(on) = f (Tj )
Parameter: VGS, Tj = 25 °C parameter : ID = 0.5 A, VGS = 10 V
SPU01N60S5
2.5 34
20V Ω
10V
A 28
7V

RDS(on)
6.5V 24
ID

1.5 20

6V 16

1
12

5.5V
8 98%
0.5
typ
5V 4

0 0
0 5 10 15 V 25 -60 -20 20 60 100 °C 180
VDS Tj

Typ. transfer characteristics Typ. capacitances

ID = f ( VGS ) C = f (VDS)
VDS≥ 2 x ID x RDS(on)max parameter: VGS =0 V, f=1 MHz
2.5 10 3

pF
A

Ciss
10 2
ID

1.5

Coss
1
10 1

0.5

Crss

0 10 0
0 4 8 12 VGS 20 0 10 20 30 40 50 60 70 80 V 100
V VDS

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 SPU01N60S5
Preliminary data SPD01N60S5
Avalanche energy Avalanche SOA
EAS = f (Tj ) IAR = f (tAR )
par.: ID =0.64A, VDD=50V par.: Tj ≤ 150 °C
22 0.8
mJ
A

18
0.6
16
E AS

IAR
14 0.5
Tj (START) =25°C
12
0.4
10 Tj (START) =125°C

8 0.3

6
0.2

4
0.1
2

0 0 -3 -2 -1 0 1 2 4
25 50 75 100 125 150 °C 200 10 10 10 10 10 10 µs 10
Tj tAR

Drain-source breakdown voltage Gate threshold voltage

V(BR)DSS = f (Tj ) VGS(th) = f (Tj)
parameter: VGS = VDS , ID = 250 µA
SPU01N60S5
720 5

V
V

4
V (BR)DSS

680
V GS(th)

3.5
660
3 98%
640
2.5
620 typ.
2

600
1.5 2%

580
1

560 0.5

540 0
-60 -20 20 60 100 °C 180 -60 -20 20 60 100 °C 180
Tj Tj

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 SPU01N60S5
Preliminary data SPD01N60S5
Forward characteristics of reverse diode Typ. gate charge
IF = f (VSD ) VGS = f (QGate )
parameter: Tj , tp = 10 µs parameter: ID = 0.8 A pulsed
10 1 SPU01N60S5
16
SPU01N60S5

V
A

12
0
10

VGS
0,2 VDS max
0,8 VDS max
IF

10

6
10 -1
Tj = 25 °C typ
4
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%) 2

10 -2 0
0 0.4 0.8 1.2 1.6 2 2.4 V 3 0 1 2 3 4 nC 5.5
VSD Qg

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 SPU01N60S5
Preliminary data SPD01N60S5

P-TO252 (D-Pak)

dimensions
symbol [mm] inch]
min max min max
A 6.40 6.73 0.2520 0.2650
B 5.25 5.50 0.2067 0.2165
C (0.65) (1.15) (0.0256) (0.0453)
D 0.63 0.89 0.0248 0.0350
E 2.28 0.2520
F 2.19 2.39 0.0862 0.0941
G 0.76 0.98 0.0299 0.0386
H 0.90 1.21 0.0354 0.0476
K 5.97 6.23 0.2350 0.2453
L 9.40 10.40 0.3701 0.4094
M 0.46 0.58 0.0181 0.0228
N 0.87 1.15 0.0343 0.0453
P 0.51 - 0.0201 -
R 5.00 - 0.1969 -
S 4.17 - 0.1642 -
T 0.26 1.02 0.0102 0.0402
U - - - -

P-TO251 (I-Pak)

dimensions
symbol [mm] [inch]
min max min max
A 6.47 6.73 0.2547 0.2650
B 5.25 5.41 0.2067 0.2130
C 4.19 4.43 0.1650 0.1744
D 0.63 0.89 0.0248 0.0350
E 2.29 typ. 0.0902 typ.
F 2.18 2.39 0.0858 0.0941
G 0.76 0.86 0.0299 0.0339
H 1.01 1.11 0.0398 0.0437
K 5.97 6.23 0.2350 0.2453
L 9.14 9.65 0.3598 0.3799
M 0.46 0.56 0.0181 0.0220
N 0.98 1.15 0.0386 0.0453

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 SPU01N60S5
Preliminary data SPD01N60S5

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© Infineon Technologies AG 1999
All Rights Reserved.

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