RJK6026DPP

Silicon N Channel MOS FET

High Speed Power Switching
REJ03G1592-0200
Rev.2.00
Jun 04, 2008

Features
• Low on-resistance
• Low leakage current
• High speed switching

Outline

RENESAS Package code: PRSS0003AB-A

(Package name: TO-220FN)
D

1. Gate
2. Drain
G
3. Source

1
2 3
S

Absolute Maximum Ratings

(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 600 V
Gate to source voltage VGSS ±30 V
Drain current ID Note4 5 A
Drain peak current ID (pulse) Note1 20 A
Body-drain diode reverse drain current IDR 5 A
Body-drain diode reverse drain peak current IDR (pulse) Note1 20 A
Avalanche current IAPNote3 4 A
Avalanche energy EARNote3 0.87 mJ
Channel dissipation Pch Note2 28.5 W
Channel to case thermal impedance θch-c 4.38 °C/W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
4. Limited by maximum safe operation area

REJ03G1592-0200 Rev.2.00 Jun 04, 2008

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RJK6026DPP

Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown voltage V(BR)DSS 600 — — V ID = 10 mA, VGS = 0
Zero gate voltage drain current IDSS — — 1 µA VDS = 600 V, VGS = 0
Gate to source leak current IGSS — — ±0.1 µA VGS = ±30 V, VDS = 0
Gate to source cutoff voltage VGS(off) 3.0 — 4.5 V VDS = 10 V, ID = 1 mA
Static drain to source on state RDS(on) — 2.0 2.4 Ω ID = 2.5 A, VGS = 10 V Note5
resistance
Input capacitance Ciss — 440 — pF VDS = 25 V
Output capacitance Coss — 45 — pF VGS = 0
Reverse transfer capacitance Crss — 6 — pF f = 1 MHz
Turn-on delay time td(on) — 26 — ns ID = 2.5 A
Rise time tr — 18 — ns VGS = 10 V
Turn-off delay time td(off) — 53 — ns RL = 120 Ω
Fall time tf — 14 — ns Rg = 10 Ω
Total gate charge Qg — 14 — nC VDD = 480 V
Gate to source charge Qgs — 3 — nC VGS = 10 V
Gate to drain charge Qgd — 7 — nC ID = 5 A
Body-drain diode forward voltage VDF — 0.9 1.5 V IF = 5 A, VGS = 0 Note5
Body-drain diode reverse recovery time trr — 250 — ns IF = 5 A, VGS = 0
diF/dt = 100 A/µs
Notes: 5. Pulse test

REJ03G1592-0200 Rev.2.00 Jun 04, 2008

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RJK6026DPP

Main Characteristics

Maximum Safe Operation Area Typical Output Characteristics

100 5
5.8 V
6V
5.6 V
10 10 V
µ 4

ID (A)
10
ID (A)

s
PW
=1 Pulse Test 5.4 V
00
µs
1 3

Drain Current
Drain Current

5.2 V
Operation in this
0.1 area is limited by 2
RDS(on)
5.0 V
0.01 1
4.8 V
Ta = 25°C
1 shot VGS = 0 V
0.001
1 10 100 1000 0 4 8 12 16 20

Drain to Source Voltage VDS (V) Drain to Source Voltage VDS (V)

Static Drain to Source on State Resistance

Typical Transfer Characteristics vs. Drain Current
10 100
Drain to Source on State Resistance
RDS(on) (Ω)
VDS = 10 V Pulse Test
5 Pulse Test 50
ID (A)

2 20
Tc = 75°C
Drain Current

1 10

0.5 25°C 5
−25°C
VGS = 10 V
0.2 2

0.1 1
0 2 4 6 8 10 0.1 0.3 1 3 10

Gate to Source Voltage VGS (V) Drain Current ID (A)

Static Drain to Source on State Resistance Body-Drain Diode Reverse

vs. Temperature Recovery Time
Static Drain to Source on State Resistance
RDS(on) (Ω)

7 1000
Reverse Recovery Time trr (ns)

Pulse Test VGS = 10 V

6 500

5
200
4 ID = 2.5 A
100
3
1.25 A 50
2

1 20 di / dt = 100 A / µs
VGS = 0, Ta = 25°C
0 10
-25 0 25 50 75 100 125 150 1 10 100

Case Temperature Tc (°C) Reverse Drain Current IDR (A)

REJ03G1592-0200 Rev.2.00 Jun 04, 2008

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RJK6026DPP

Typical Capacitance vs.

Drain to Source Voltage Dynamic Input Characteristics
1000 800 16

VDS (V)
VGS

VGS (V)
Ciss ID = 5 A
Capacitance C (pF)

600 VDD = 100 V 12

100 VDS 300 V

Drain to Source Voltage

Gate to Source Voltage

480 V

400 8
Coss

10
200 VDD = 480 V 4
Crss 300 V
VGS = 0 100 V
f = 1 MHz 0
1
0 100 200 300 0 4 8 12 16

Drain to Source Voltage VDS (V) Gate Charge Qg (nC)

Reverse Drain Current vs. Gate to Source Cutoff Voltage

Source to Drain Voltage vs. Case Temperature
5 5
VDS = 10 V
IDR (A)

Gate to Source Cutoff Voltage

Pulse Test
VGS(off) (V)

4 ID = 10 mA
4
Reverse Drain Current

1 mA
3

2
3
0.1 mA
1 5, 10 V
VGS = 0, -5 V

2
0 0.4 0.8 1.2 1.6 2.0 -25 0 25 50 75 100 125 150

Source to Drain Voltage VSD (V) Case Temperature Tc (°C)

REJ03G1592-0200 Rev.2.00 Jun 04, 2008

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RJK6026DPP

Normalized Transient Thermal Impedance vs. Pulse Width

Normalized Transient Thermal Impedance γs (t)

10

Tc = 25°C
3

D=1
1
0.5

0.3 0.2
θ ch – c(t) = γ s (t) • θ ch – c
0.1 θ ch – c = 4.38°C/W, Tc = 25°C
0.1
0.05
PDM PW
D=
0.02 T
0.03 e PW
0.01 t puls
o T
1sh
0.01
10 µ 100 µ 1m 10 m 100 m 1 10

Pulse Width PW (s)

Switching Time Test Circuit Waveform

Vin Monitor Vout

90%
Monitor
D.U.T.
RL Vin 10%
10 Ω
Vout 10% 10%
Vin VDD
10 V = 300 V
90% 90%

td(on) tr td(off) tf

REJ03G1592-0200 Rev.2.00 Jun 04, 2008

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RJK6026DPP

Package Dimensions
Package Name JEITA Package Code RENESAS Code Previous Code MASS[Typ.]
TO-220FN  PRSS0003AB-A  2.0g Unit: mm

10 ± 0.3 2.8 ± 0.2

6.5 ± 0.3
3 ± 0.3
15 ± 0.3
φ3.2 ± 0.2
3.6 ± 0.3
14 ± 0.5

1.1 ± 0.2
1.1 ± 0.2

0.75 ± 0.15
0.75 ± 0.15
2.54 ± 0.25 2.54 ± 0.25
4.5 ± 0.2
2.6 ± 0.2

Ordering Information
Part No. Quantity Shipping Container
RJK6026DPP-00-T2 1050 pcs Box (Tube)

REJ03G1592-0200 Rev.2.00 Jun 04, 2008

Page 6 of 6
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