(7 0 Ω ) E

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Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2494)

Darlington 2SB1625 B

Equivalent circuit C

Application : Audio, Series Regulator and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3P)
Symbol 2SB1625 Unit Symbol Conditions 2SB1625 Unit

0.8±0.2
15.6±0.2 5.5±0.2
VCBO –110 V ICBO VCB=–110V –100max µA 3.45 ±0.2

VCEO –110 V IEBO VEB=–5V –100max µA

5.5
9.5±0.2
VEBO –5 V V(BR)CEO IC=–30mA –110min V

23.0±0.3
IC –6 A hFE VCE=–4V, IC=–5A 5000min∗ ø3.3±0.2
a
IB –1 VCE(sat) IC=–5A, IB=–5mA –2.5max V

1.6
A b

3.0
PC 60(Tc=25°C) W VBE(sat) IC=–5A, IB=–5mA –3.0max V

3.3
Tj 150 °C fT VCE=–12V, IE=0.5A –100typ MHz 1.75 0.8

16.2
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz –110typ pF 2.15
1.05 +0.2
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
-0.1

5.45±0.1 5.45±0.1 0.65 +0.2

-0.1 3.35
■Typical Switching Characteristics (Common Emitter) 1.5 4.4 1.5

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.5g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Type No.
B C E
–30 6 –5 –10 5 –5 5 1.1typ 3.2typ 1.1typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sa t ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

A

A
m

m
.5 (V CE =–4V)
–1

Collector-Emitter Saturation Voltage V C E (s at) (V )

–6 –0 –3 –6
A
A

.4m
–0 .3 m A
–5m

–0

–5

Collector Current I C (A)

–0. 2m A
Collector Current I C (A)

–4 –2 –4
–5A

–3
I B =–0. 1mA I C =–3A

p)

mp)
)
Tem

emp
e Te
–2 –1 –2

se T
se
(Ca

Cas
(Ca
˚C

˚C (
25˚C
125
–1

–30
0 0 0
0 –2 –4 –6 –0.1 –0.5 –1 –5 –10 –50 –100 0 –1 –2 –3
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚C /W )

(V C E =–4V) (V C E =–4V)
40,000 5
50000
125˚C
Typ
DC Cur r ent Gai n h F E

DC Cur r ent Gai n h F E

25˚C
Transient Thermal Resistance

10,000 10000
–30˚C
5,000 5000

1000 1
1,000
500
500
0.5
200 100
–0.2 –0.05 –0.1 –0.5 –1 –5 –6 –0.02 –0.05 –0.1 –0.5 –1 –5 –6 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
120 –20 60

Typ –10
Ma xim um Powe r Dissipation P C ( W)

100
–5 10
m
s
Cut -off Fre quen cy f T (M H Z )

10
ith

0m
Collector Curr ent I C (A)

80 s 40
In

DC
fin
ite
he

–1
60
at
si
nk

–0.5

40 20

Without Heatsink
–0.1 Natural Cooling
20
Without Heatsink
3.5
0 –0.05 0
0.02 0.05 0.1 0.5 1 5 6 –5 –10 –50 –100 –150 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

52