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Darlington: Silicon PNP Epitaxial Planar Transistor (Complement To Type 2SD2389)

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(7 0 Ω ) E

Darlington 2SB1559 B

Equivalent circuit C

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2389) Application : Audio, Series Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol Ratings Unit Symbol Conditions Ratings Unit
4.8±0.2
µA
15.6±0.4

5.0±0.2
VCBO –160 ICBO VCB=–160V –100max

2.0
V

1.8
9.6 2.0±0.1

VCEO –150 V IEBO VEB=–5V –100max µA


VEBO –5 V V(BR)CEO IC=–30mA –150min V

19.9±0.3

4.0
IC –8 A hFE VCE=–4V, IC=–6A 5000min∗ a ø3.2±0.1
b
IB –1 A VCE(sat) IC=–6A, IB=–6mA –2.5max V
PC 80(Tc=25°C) W VBE(sat) IC=–6A, IB=–6mA –3.0max V 2

4.0max
20.0min
Tj 150 °C fT VCE=–12V, IE=1A 65typ MHz 3
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 160typ pF 1.05 +0.2
-0.1 0.65 +0.2
-0.1

∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)


5.45±0.1 5.45±0.1 1.4
■Typical Switching Characteristics (Common Emitter) B C E

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
–60 10 –6 –10 5 –6 6 0.7typ 3.6typ 0.9typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)


A
m

(V C E =–4V)
Collector-Emitter Saturation Voltage V C E (s at) (V )
.5
mA

–8 –3 –8
–2

mA A
–2.0 – 1 .8 m
–10

A
– 1 .5 m
–1. 3m A

Collector Current I C (A)


–6 –1 .0 mA –6
Collector Current I C (A)

–0.8m A –2 –8A

–4 –0.5m A –6A
–4

p)

mp)
I C =–4A

Tem

)
emp
e Te
I B =–0.3mA –1

se

se T
(Ca

Cas
(Ca
–2 –2

˚C

˚C (
25˚C
125

–30
0 0 0
0 –2 –4 –6 –0.2 –0.5 –1 –5 –10 –50 –100 –200 0 –1 –2 –3
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics


θ j - a (˚ C/W)

(V C E =–4V) (V C E =–4V)
40,000 50000 4
125˚C
DC C urrent G ain h FE

Transient Thermal Resistance

Typ
DC Cur rent Gain h FE

25˚C

10000
10,000 –30˚C 1

5000
5,000 0.5

2,000 1000 0.2


–0.2 –0.5 –1 –5 –8 –0.2 –0.5 –1 –5 –8 1 5 10 50 100 500 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating


(V C E =–12V)
100 –20 80

–10 10
10
M aximum Po wer Dissipation P C (W)

m
80 0m s
Cut -off Fre quen cy f T ( MH Z )

–5 D s
60
W

Typ C
ith
Collector Curre nt I C (A)

In
fin

60
ite
he

–1 40
at
si
nk

40
–0.5

Without Heatsink 20
20 Natural Cooling

–0.1
Without Heatsink
3.5
0 –0.05 0
0.02 0.05 0.1 0.5 1 5 8 –2 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

47

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