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Assignment Solution: T0 F G D S B

1. The MOSFET is an N-channel type operating in the linear region, as the gate-source voltage is greater than the threshold voltage and the drain-source voltage is less than the difference between gate-source voltage and threshold voltage. 2. Given the drain current of 0.76mA, the ratio of channel width to length is calculated to be 4.96. 3. For the MOS system with the given parameters, the threshold voltage under zero bias at room temperature is calculated to be -0.65V using the threshold voltage formula.

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67 views

Assignment Solution: T0 F G D S B

1. The MOSFET is an N-channel type operating in the linear region, as the gate-source voltage is greater than the threshold voltage and the drain-source voltage is less than the difference between gate-source voltage and threshold voltage. 2. Given the drain current of 0.76mA, the ratio of channel width to length is calculated to be 4.96. 3. For the MOS system with the given parameters, the threshold voltage under zero bias at room temperature is calculated to be -0.65V using the threshold voltage formula.

Uploaded by

raza
Copyright
© © All Rights Reserved
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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Assignment solution

Q. 1:
a. For a MOS transistor which is having the parameters: VT0= - 0.9V, 2ΦF=0.54V, process trans-
conductance=29 µA/V2, γ=0.12V1/2, λ=0.04V-1, is biased with terminal voltages V G=5V, VD=5V,
VS=3V, and VB=0V,
i. Determine the type of MOSFET.
ii. Mode of operation of the transistor.
iii. W/L , If the drain current is ID=0.76mA,
Solution
The type and the mode of the operation of the MOSFET can be determined on the basis of the V T
(threshold voltage). First, we will find the threshhold voltage which is given by the following formula
V T =V ¿ + γ √|−2 ∅ f +V SB|−√|−2 ∅ f| ----------------1

The value of V ¿, γ and 2 ∅ f are the given we need the value V BS will be find using this convention
V SB =V S −V B =3V −0 V =3 V ---------------------2
By putting the all value in equaton-1

V T =−0.9 v +0.12 √|−0.54 v +3 v|−√ ¿−0.54 V ∨¿

V T =−1.4467 V --------------------3

As VG ,V D AND V S are given we will find the value of V GS and V DS using the following formulas

V GS=V G−V S=5 V −3 V =2V -----------------------SEQ Equation¿ ARABIC4

V DS=V D−V S=5 V −3V =2 V -------------------------


SEQ Equation¿ ARABIC5

1-Determine the type of MOSFET.

To determined the type of the MOSFET we will compare the V GS voltage with threshold voltage
V T from the value on equation 3 and 4 , it is clear that V GS >V T , So this condition is valid and
MOSFET would be in on state when the type of the mosfet would be N-channel MOSFET.
2-Mode of operation of the transistor.
There are three mode of the operation of the MOSFET , cutt-off, linear mode and saturation
mode,for cutt-off mode V GS <V T , but in our case this condition is not satisfied , for saturation
modeV DS >V GS−V T , and for linear operation mode V DS <V GS−V T ,in our case
V GS−V T =2 V − (−1.444 )=3.446 V --------------------------
SEQ Equation¿ ARABIC6

From comparing the equation 5 and 6 , its clear that V DS <V GS−V T ,so the mode of operation of the
MOSFET is linear mode
3-Find W/L If the drain current is ID=0.76mA,

As we know that MOSFET is working in the linear region, so the general formula to calculate the
drain current I D the following formula is used
W
I D =k n ¿----------------------- SEQ Equation ¿ ARABIC7
L
W
By re-arrangint the equation 7 we can get the the value of as following
L

W ID 1
= X ¿¿
L k n (1+ λ V DS)

By putting the value of the all paramet the as given above the final value of the is following
W 0.76 mA 1
= X
L 29uA (1+0.04∗2 V ) 22
( 2V −(−1.446)¿¿ 2−
2 )
W
=4.9 6
L
b-Consider a MOS system with the following parameters:
Tox=500 Ao, ΦGC=-0.85 V, Na=2×1015 cm-3, Nox=3×1011 C/cm2, εox=3.97εo, εsi=11.7 εo Determine
threshold voltage under zero bias at room temperature. ?
Solution
To find the value of the threshold value for the MOSFET when bias is zero the following formula
is used
Q Bo Q ox
V ¿ =ΦGC −2Φ f − − ----------------------------------------------
C ox C ox
SEQ Equation¿ ARABIC8
First we need to find the all parameter of equation 8 , Φ GC is given we can find Φ f Using following
equation

Φ GC =Φ f −0.55

Arranging the above equation we can calculate the value of Φ f


Φ f =ΦGC +0.55=¿-0.85+0.55=-0.30v---------------------4

Next we will find the other parameter which is Q Bo will be calculate using following formula

Q Bo =−√ 2q∗N a∗∈si∗¿−2 Φf ∨¿ ¿---------------------SEQ Equation¿ ARABIC10

The value of q= 1.6 ×10−19 C value N a ,Φ f and is given above the value of ∈siis given asbelow
∈si =11.7 ∈o

Where ∈o=8.85× 10−14 so the value of of ∈si =1.03 10−12 , so putting all value in equation 10
we will get the value of the

QBo =−1.98 ×10−8 --------------------------- SEQ Equation ¿ ARABIC11

The value of the C oxis calculted as


∈o x 3.97 ∈o 3.97 ∈o −8
C ox = = = =7.03× 10 --------------------------
t ox 500 A 500 ×10−8
SEQ Equation¿ ARABIC12

The final parameter Qox Is calculated as

Qox =N ox × q=3 ×1011 ×1.6 × 10−19

Qox =4.8× 10−8-----------------------------------SEQ Equation¿ ARABIC13

By putting the value of equation 9 ,11,12 and 13 in 8 we will get the value of the threshold voltage V ¿

−1.98 ×10−8 4.8 ×10−8


V ¿ =−0.85−2(−0.30)− −
7.03 ×10−8 7.03 ×10−8
V ¿ =−0.65 V

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