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SEMICONDUCTOR TECHNICAL DATA by MHW1910/D

The RF MOSFET Line

      
N–Channel Enhancement–Mode Lateral MOSFET
• Specified 26 Volts, 1930–1990 MHz, Class AB Characteristics
Output Power = 14 Watts CW Typ 10 W, 1930 – 1990 MHz
Power Gain = 26 dB Typ @ 10 Watts RF POWER AMPLIFIER
Efficiency = 34% Min @ 10 Watts
• 50 Ω Input/Output System
• Designed for GSM Linearity Requirements

CASE 301AW–02, STYLE 1

MAXIMUM RATINGS
Rating Symbol Value Unit
DC Supply Voltage VS 28 Vdc
DC Bias Voltage Vbias 28 Vdc
RF Input Power Pin 21 dBm
RF Output Power Pout 20 W
Operating Case Temperature Range TC – 10 to +90 °C
Storage Temperature Range Tstg – 30 to +100 °C

ELECTRICAL CHARACTERISTICS (TC = +25°C, VS = 26 Vdc; Vbias = 5 Vdc; 50 Ω system, unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Frequency Range BW 1930 — 1990 MHz
Quiescent Current (Pin = 0 mW) IDQ 100 — 150 mA
Bias Current Ibias — — 2 mA
Output Power at 1 dB Compression P1dB 10 14 — W
Power Gain (Pout = 10 W) GP 24 26 28 dB
Efficiency (Pout = 10 W) η 34 — — %
Input VSWR VSWRin — — 1.8:1 —
Harmonics at 2fo H2 — — – 35 dBc
Harmonics at 3fo H3 — — – 45 dBc
Reverse IMD; Pout = 10 W; Preverse = –40 dBc IMDr — — – 50 dBc
(F1 = F0 ±200 kHz @ –40 dBc)
Load Mismatch Stress ψ No Degradation in
Load VSWR = 5:1, All Phase Angles Output Power
Stability (Pout = 10 mW to 10 W, VS ≤ 26 Vdc) — All Spurious Outputs More Than
Load VSWR = 5:1, All Phase Angles 60 dB Below Desired Signal

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

REV 1

MOTOROLA RF DEVICE DATA

Motorola, Inc. 1999 MHW1910–1
1
EXTREME CASE ELECTRICAL CHARACTERISTICS (TC = –10 to + 85°C, VS = 23.5 to 26 Vdc, Vbias = 3 to 26 Vdc, 50 Ω system,
unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Frequency Range BW 1930 — 1990 MHz
Quiescent Current (Pin = 0 mW) IDQ 100 — 160 mA
Bias Current Ibias — — 2 mA
Output Power at 1 dB Compression P1dB 8 — — W
Power Gain Variation for a Given Part (Pout = 10 W) GP — 5 6.5 dB
Efficiency (Pout = 10 W) η 32 — — %
Input VSWR VSWRin — — 2:1 —
Harmonics at 2fo H2 — — – 35 dBc
Harmonics at 3fo H3 — — – 45 dBc
Reverse IMD; Pout = 10 W; Preverse = –40 dBc IMDr — — – 46 dBc
(F1 = F0 ±200 kHz @ –40 dBc)
Load Mismatch Stress ψ No Degradation in
Load VSWR = 5:1, All Phase Angles Output Power
Stability (Pout = 10 mW to 10 W, VS ≤ 26 Vdc) — All Spurious Outputs More Than
Load VSWR = 5:1, All Phase Angles 60 dB Below Desired Signal

BIAS REGULATION

Vbias VS
RF RF
IN OUT

Figure 1. Internal Diagram

MHW1910–1 MOTOROLA RF DEVICE DATA

2
 TYPICAL CHARACTERISTICS

44 60
42
40 50
Pout , OUTPUT POWER (dBm)

38

η, EFFICIENCY (%)
40
36
34 Pout @ 1930 MHz
30
32 η @ 1990 MHz
30
20
28
26 Pout @ 1990 MHz 10
24
22 0
0 2 4 6 8 10 12 14 16 18 20 22 24 0 2 4 6 8 10 12 14 16 18 20 22 24
Pin, INPUT POWER (dBm) Pin, INPUT POWER (dBm)

Figure 2. Output Power versus Input Power Figure 3. Efficiency versus Input Power

28 30
29 Pout = 10 W
24
TC = –10°C
Pout = 10 W 28
G p , POWER GAIN (dB)

G p , POWER GAIN (dB)

20
27
TC = 25°C
16 26

12 25
24
8
TC = 85°C
23
4 22
0 21
1700 1800 1900 2000 2100 2200 1920 1930 1940 1950 1960 1970 1980 1990 2000
f, FREQUENCY (MHz) f, FREQUENCY (MHz)

Figure 4. Power Gain versus Frequency Figure 5. Gain versus Frequency

43 1.5

42 1.3 Pout = 0.5 W to 10 W

G p , POWER GAIN VARIATION (dB)

1.1
41 TC = –10°C
0.9
η, EFFICIENCY (%)

40 0.7 TC = 85°C

39 TC = 25°C 0.5
TC = 25°C
38 0.3
0.1
37 TC = 85°C TC = –10°C
–0.1
36 Pout = 10 W –0.3
35 –0.5
1920 1930 1940 1950 1960 1970 1980 1990 2000 1920 1930 1940 1950 1960 1970 1980 1990 2000
f, FREQUENCY (MHz) f, FREQUENCY (MHz)

Figure 6. Efficiency versus Frequency Figure 7. Power Gain Variation versus Frequency

MOTOROLA RF DEVICE DATA MHW1910–1

3
 TYPICAL CHARACTERISTICS

15.5 1.0
TC = –10°C
15
14.5 0.8
TC = 25°C

R p , GAIN RIPPLE (dB)

14
0.6
P1dB (W)

13.5
Rp
13 TC = 85°C 0.4
12.5

12 0.2
11.5
11 0
1920 1930 1940 1950 1960 1970 1980 1990 2000 –20 –10 0 10 20 30 40 50 60 70 80 90
f, FREQUENCY (MHz) TEMPERATURE (°C)

Figure 8. P1dB versus Frequency Figure 9. Gain Ripple versus Temperature

1.22
1.20
1.18
1.16
VSWR in , INPUT VSWR

1.14
1.12
1.10 Pout = 10 W
1.08
1.06
1.04
1.02
1.00
1750 1800 1850 1900 1950 2000
f, FREQUENCY (MHz)

Figure 10. Input VSWR

MHW1910–1 MOTOROLA RF DEVICE DATA

4
 PACKAGE DIMENSIONS

–A– NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
G Y14.5M, 1982.
B 0.25 (0.010) M T A M 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION F IS FROM THE BOTTOM OF
HEATSINK TO THE TOP OF THE LEAD.
A 4. DIMENSION P TO BE MEASURED AS LEAD EXITS
COVER.
5. FLANGE FLATNESS 0.038 (0.0015) MAXIMUM
–S– R CONVEX, 0.063 (0.0025) MAXIMUM CONCAVE.
6. ADHESIVE MATERIAL SHALL BE INCLUDED IN
0.25 (0.010) M T A M THE DIMENSIONS LISTED.
1 2 3 4
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
Q 2 PL A 1.890 1.910 48.01 48.51
B 1.170 1.190 29.72 30.22
V 0.13 (0.005) M T S M
C 0.350 0.376 8.89 9.55
D 0.018 0.022 0.46 0.55
W E 0.115 0.135 2.92 3.42
F 0.170 BSC 4.31 BSC
N A G 1.600 BSC 40.64 BSC
H H 1.265 BSC 32.13 BSC
J 0.325 0.375 8.25 9.52
D 4 PL K 0.225 ––– 5.72 –––
N 1.165 BSC 29.59 BSC
0.25 (0.010) M T A M P 0.010 REF 0.25 REF
Q 0.150 0.160 3.81 4.06
R 0.685 0.705 17.40 17.90
S 0.598 0.612 15.18 15.54
V 0.365 BSC 9.27 BSC
W 0.465 BSC 11.81 BSC
E STYLE 1:
C PIN 1. RF IN
2. V BIAS
3. V SUPPLY
–T– 4. RF OUT
SEATING J
PLANE
F NOTE 3

P 4 PL K
4 PL
0.25 (0.010) M T
VIEW A–A

CASE 301AW–02
ISSUE B

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
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MOTOROLA RF DEVICE DATA ◊ MHW1910/D

MHW1910–1
5