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SEMICONDUCTOR TECHNICAL DATA by MRF897/D

The RF Line

    
Designed for 24 Volt UHF large–signal, common emitter, class–AB linear
amplifier applications in industrial and commercial FM/AM equipment operating
in the range 800– 970 MHz.
• Specified 24 Volt, 900 MHz Characteristics
Output Power = 30 Watts 30 W, 900 MHz
Minimum Gain = 10 dB @ 900 MHz, class–AB RF POWER
TRANSISTOR
Minimum Efficiency = 30% @ 900 MHz, 30 Watts (PEP)
NPN SILICON
Maximum Intermodulation Distortion –30 dBc @ 30 Watts (PEP)
• Characterized with Series Equivalent Large–Signal Parameters from 800
to 960 MHz
• Silicon Nitride Passivated
• 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR
@ 26 Vdc, and Rated Output Power
• Gold Metalized, Emitter Ballasted for Long Life and Resistance to Metal–
Migration
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.

CASE 395B–01, STYLE 1

MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 30 Vdc
Collector–Emitter Voltage VCES 60 Vdc
Emitter–Base Voltage VEBO 4.0 Vdc
Collector–Current — Continuous IC 4.0 Adc
Total Device Dissipation @ TC = 25°C PD 105 Watts
Derate above 25°C 0.60 W/°C
Storage Temperature Range Tstg – 65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 1.67 °C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) V(BR)CEO 30 33 — Vdc
Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) V(BR)CES 60 80 — Vdc
Emitter–Base Breakdown Voltage (IE = 5 mAdc, IC = 0) V(BR)EBO 4.0 4.7 — Vdc
Collector Cutoff Current (VCE = 30 Vdc, VBE = 0) ICES — — 10.0 mAdc
ON CHARACTERISTICS
DC Current Gain (ICE = 1.0 Adc, VCE = 5 Vdc) hFE 30 80 120 —
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 24 Vdc, IE = 0, f = 1.0 MHz) Cob 14 21 28 pF
(continued)

REV 6

MOTOROLA RF DEVICE DATA

Motorola, Inc. 1994 MRF897
1
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
FUNCTIONAL CHARACTERISTICS
Common–Emitter Amplifier Power Gain Gpe 10.0 12.0 — dB
(VCC = 24 Vdc, Pout = 30 Watts (PEP), Icq = 125 mA, f1 = 900 MHz,
f2 = 900.1 MHz)
Collector Efficiency η 35 38 — %
(VCC = 24 Vdc, Pout = 30 Watts (PEP), Icq = 125 mA, f1 = 900 MHz,
f2 = 900.1 MHz)
Intermodulation Distortion IMD — –37 –30 dBc
(VCC = 24 Vdc, Pout = 30 Watts (PEP), Icq = 125 mA, f1 = 900 MHz,
f2 = 900.1 MHz)
Output Mismatch Stress ψ No Degradation in Output Power
(VCC = 26 Vdc, Pout = 30 Watts (PEP), Icq = 125 mA, f1 = 900 MHz, Before and After Test
f2 = 900.1 MHz, Load VSWR = 5:1 (all phase angles))

Q1 C11 C13 C18

+ + VCC
R1
VBB

+ L5 R5 C21
R3 L3 C6
COAX 1 C4
B3 BALUN 2
B1
C16 TL9
TL3 L7
C8
L1
TL2
TL7
OUTPUT
INPUT TL5 C23
TL11
TL1 C2
C10 C15 C20

C1 TL6 C24
C3 TL8
D.U.T.
L2
L8
TL4
TL10
BALUN 1 B2 C9
B4
C17
C5 R4 L4 COAX 2
L6 R6 C22
R2 +
VBB C7
VCC
Q2
+ +
C12 C14 C19

B1, B2, B3, B4 — Ferrite Bead, Fair Rite #2743019447 N1, N2 — Type N Flange Mount, Omni Spectra 3052–1648–10
C1 — 0.8 – 8.0 pF Trimmer Capacitor, Johanson Q1 — Bias Transistor BD136 PNP
C2, C3, C23, C24 — 43 pF, 100 mil, ATC Chip Capacitor R1, R12 — 39 Ohm, 2.0 W
C4, C5, C18, C19, C21, C22 — 820 pF, 100 mil, Chip Capacitor, Kemet R3, R4, R5, R6 — 4.0 x 39 Ohm, 1/8 W, Chips in Parallel,
C6, C7, C11, C12 — 10 µF, Lytic Capacitor, Panasonic R3, R4, R5, R6 — Rohm 390–J
C8, C9, C16, C17 — 100 pF, 100 mil, Chip Capacitor, Murata Erie TL1 – TL11 — See Photomaster
C10 — 13 pF, 50 mil, ATC Chip Capacitor Balun1, Balun2, Coax 1, Coax 2 — 2.20″ 50 Ohm, 0.088″ o.d.
C13, C14 — 250 µF Lytic Capacitor, Mallory Balun1, Balun2, Coax 1, Coax 2 — semi–rigid coax, Micro Coax
C15 — 1.1 pF, 50 mil, ATC Chip Capacitor Balun1, Balun2, Coax 1, Coax 2 — UT–85–M17
C20 — 6.8 pF, 100 mil, ATC Chip Capacitor Board — 1/32″ Glass Teflon, Arlon GX–0300–55–22, εr = 2.55
L1, L2, L3, L4, L5, L6 — 5 Turns 20 AWG, IDIA 0.126″ choke

Figure 1. MRF897 Broadband Test Circuit

MRF897 MOTOROLA RF DEVICE DATA

2
 45 45
PIN = 3 W
40 40
Po, OUTPUT POWER (WATTS) f = 800 MHz 2.5 W

Po, OUTPUT POWER (WATTS)

35 35
2W
30 30
900 MHz 1.5 W
25 25
960 MHz
20 20 1W
15 15
0.5 W
10 VCC = 24 Vdc 10
Icq = 125 mA
VCC = 24 Vdc
5 5
Icq = 125 mA
0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 800 820 840 860 880 900 920 940 960
PIN, INPUT POWER (WATTS) f, FREQUENCY (MHz)

Figure 2. Output Power versus Input Power Figure 3. Output Power versus Frequency

45 –25

IMD, INTERMODULATION DISTORTION (dBc)

PIN = 2.5 W 3RD ORDER
40 –30
Po, OUTPUT POWER (WATTS)

35 –35

30 1.5 W –40 5TH

25 –45 7TH
20 –50
15 –55
0.5 W f1 = 900 MHz
10 –60 f2 = 900.1 MHz
5 f = 900 MHz –65 VCC = 24 Vdc
Icq = 125 mA Icq = 125 mA
0 –70
14 16 18 20 22 24 26 28 30 0 5 10 15 20 25 30 35
VCC, SUPPLY VOLTAGE (VOLTS) Po, OUTPUT POWER (WATTS–PEP)

Figure 4. Output Power versus Supply Voltage Figure 5. Intermodulation versus Output Power

14.0 12 50

η , EFFICIENCY (%)
13.5 GPE
Icq = 400 mA
13.0 11 45
G PE, POWER GAIN (dB)

GPE , POWER GAIN (dB)

12.5 300 mA 10 40
12.0 η
250 mA
11.5 9 35
200 mA
11.0
2.0

8 30
10.5
INPUT VSWR

INPUT VSWR
10.0 f = 900 MHz POUT = 30 W (PEP)
1.5

125 mA 7 25
VCC = 24 Vdc VCC = 24 Vdc
9.5
Icq = 125 mA Icq = 125 mA
1.0

9.0 6 20
0.01 0.1 1 10 840 850 860 870 880 890 900
Po, OUTPUT POWER, (WATTS) f, FREQUENCY (MHz)

Figure 6. Power Gain versus Output Power Figure 7. Broadband Test Fixture Performance

MOTOROLA RF DEVICE DATA MRF897

3
 f Zin ZOL*
MHz Ohms Ohms
800 1.0 + j10.3 5.9 – j0.4
850 1.5 + j10.5 5.7 + j2.6
900 1.8 + j11.0 5.9 + j3.4
960 2.2 + j11.4 6.2 + j4.4
ZOL* = Conjugate of the optimum load impedance f = 800 MHz
ZOL* = into which the device operates at a given 900
850
ZOL* = output power, voltage and frequency.
960
Zin

960
900
850 Zo = 10 Ohms
ZOL*

f = 800 MHz

NOTE: Zin & ZOL* are given Po = 300 W (PEP), VCC = 24 V

from base–to–base and
collector–to–collector respectively.

Figure 8. Series Equivalent Input/Output Impedances

MRF897 MOTOROLA RF DEVICE DATA

4
 PACKAGE DIMENSIONS

–A– NOTES:
Q 2 PL 1. DIMENSIONING AND TOLERANCING PER ANSI
U Y14.5M, 1982.
0.51 (0.020) M T A M B M 2. CONTROLLING DIMENSION: INCH.

INCHES MILLIMETERS
DIM MIN MAX MIN MAX
1 2 A 0.739 0.750 18.77 19.05
B 0.240 0.260 6.10 6.60
–B– C 0.165 0.198 4.19 5.03
3 4 5 D 0.055 0.065 1.40 1.65
E 0.055 0.070 1.40 1.78
K G 0.110 0.130 2.79 3.30
H 0.079 0.091 2.01 2.31
J 0.003 0.005 0.08 0.13
K 0.180 0.220 4.57 5.59
G STYLE 1:
N 0.315 0.330 8.00 8.38
PIN 1. BASE
D 2. BASE Q 0.125 0.135 3.18 3.42
N E 3. COLLECTOR U 0.560 BSC 14.22 BSC
J 4. COLLECTOR
C 5. EMITTER
H
SEATING
–T– PLANE

CASE 395B–01
ISSUE A

MOTOROLA RF DEVICE DATA MRF897

5
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
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against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.
EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England.
JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan.
ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.

*MRF897/D*
MRF897 ◊ MRF897/D
MOTOROLA RF DEVICE DATA
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