MRF 1946a
MRF 1946a
MRF 1946a
The RF Line
. . . designed for 12.5 volt large–signal power amplifiers in commercial and
industrial equipment.
• High Common Emitter Power Gain
• Specified 12.5 V, 175 MHz Performance
30 W, 136 – 220 MHz
Output Power = 30 Watts RF POWER
Power Gain = 10 dB TRANSISTORS
Efficiency = 60% NPN SILICON
• Diffused Emitter Resistor Ballasting
• Characterized to 220 MHz
• Load Mismatch at High Line and Overdrive Conditions
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 1.75 °C/W
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage V(BR)CEO 16 — — Vdc
(IC = 25 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage V(BR)CES 36 — — Vdc
(IC = 25 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage V(BR)EBO 4.0 — — Vdc
(IE = 5.0 mAdc, IC = 0)
Collector Cutoff Current ICES — — 5.0 mAdc
(VCE = 15 Vdc, VBE = 0, TC = 25°C)
ON CHARACTERISTICS
DC Current Gain hFE 40 75 150 —
(IC = 1.0 Adc, VCE = 5.0 Vdc)
(continued)
REV 6
DYNAMIC CHARACTERISTICS
Output Capacitance Cob — 75 100 pF
(VCB = 15 Vdc, IE = 0, f = 1.0 MHz)
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain Gpe 10 11 — dB
(VCC = 12.5 Vdc, Pout = 30 W, f = 175 MHz)
Collector Efficiency η 60 70 — %
(VCC = 12.5 Vdc, Pout = 30 W, f = 175 MHz)
Load Mismatch ψ
(VCC = 15.5 Vdc, Pin = 2.0 dB Overdrive, No Degradation in Power Output
Load VSWR = 30:1)
+12.5
L5 RFC2 Vdc
+
C8 C9 C10
L3 L4
C7
C1 L1 L2
DUT
C2 C3 C4 C11 C5 C6
RFC1
0 0
0 1 2 3 4 5 130 150 170 190 210 230
Pin, INPUT POWER (WATTS) f, FREQUENCY (MHz)
Figure 2. Output Power versus Input Power Figure 3. Output Power versus Frequency
50 50
Pin = 4 W
f = 220 MHz f = 175 MHz
Pout , OUTPUT POWER (WATTS)
3W 2W
30 30
2W
1W
20 20
1W
10 10
5 6 7 8 9 10 11 12 13 14 15 5 6 7 8 9 10 11 12 13 14 15
VCC, SUPPLY VOLTAGE (VOLTS) VCC, SUPPLY VOLTAGE (VOLTS)
Figure 4. Output Power versus Supply Voltage Figure 5. Output Power versus Supply Voltage
50 50
Pin = 4 W Pin = 4 W
3W
f = 150 MHz f = 136 MHz
3W
Pout , OUTPUT POWER (WATTS)
40 40 2W
2W
30 30
1W
1W
20 20
10 10
5 6 7 8 9 10 11 12 13 14 15 5 6 7 8 9 10 11 12 13 14 15
VCC, SUPPLY VOLTAGE (VOLTS) VCC, SUPPLY VOLTAGE (VOLTS)
Figure 6. Output Power versus Supply Voltage Figure 7. Output Power versus Supply Voltage
η c , COLLECTOR EFFICIENCY
10 80
6 2.0:1 40
1.5:1
INPUT VSWR
4 1.1:1 20
150 155 160 165 170 175
f, FREQUENCY (MHz)
150
220
f = 136 MHz 175
Zin
Zo = 10 Ω
150 220
A
U NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
M Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
Q 1 M
INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
A 0.960 0.990 24.39 25.14
R B B 0.370 0.390 9.40 9.90
C 0.229 0.281 5.82 7.13
D 0.215 0.235 5.47 5.96
E 0.085 0.105 2.16 2.66
2 3 H 0.150 0.108 3.81 4.57
J 0.004 0.006 0.11 0.15
D K 0.395 0.405 10.04 10.28
S K M 40 _ 50 _ 40 _ 50 _
Q 0.113 0.130 2.88 3.30
R 0.245 0.255 6.23 6.47
S 0.790 0.810 20.07 20.57
U 0.720 0.730 18.29 18.54
STYLE 1:
PIN 1. EMITTER
J 2. BASE
3. EMITTER
4. COLLECTOR
C
H E SEATING
PLANE
CASE 211–07
ISSUE N
MRF1946
T A NOTES:
J 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
S SEATING
PLANE INCHES MILLIMETERS
C DIM MIN MAX MIN MAX
E P A 0.370 0.385 9.40 9.78
B 0.320 0.330 8.13 8.38
8–32UNC–2A C 0.670 0.790 17.02 20.07
D 0.215 0.235 5.46 5.97
WRENCH FLAT L E 0.070 ––– 1.78 –––
U J 0.003 0.007 0.08 0.18
K 0.490 ––– 12.45 –––
L 0.055 0.070 1.40 1.78
M 45 _NOM 45 _NOM
P ––– 0.050 ––– 1.27
3 D K R 0.299 0.307 7.59 7.80
S 0.158 0.178 4.01 4.52
B 2 4 T 0.083 0.100 2.11 2.54
U 0.098 0.132 2.49 3.35
STYLE 1:
1 PIN 1. EMITTER
2. BASE
M 3. EMITTER
4. COLLECTOR
R
CASE 145A–09
ISSUE M
MRF1946A
MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
*MRF1946/D*
MRF1946 MRF1946A ◊ MRF1946/D
MOTOROLA RF DEVICE DATA
6