Switching Transistor MPS3646: NPN Silicon
Switching Transistor MPS3646: NPN Silicon
Switching Transistor MPS3646: NPN Silicon
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit 1
EMITTER
Thermal Resistance, Junction to Ambient RqJA 200 °C/W
Thermal Resistance, Junction to Case RqJC 83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) V(BR)CES 40 — Vdc
Collector −Emitter Sustaining Voltage(1) (IC = 10 mAdc, IB = 0) VCEO(sus) 15 — Vdc
Collector −Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO 40 — Vdc
Emitter −Base Breakdown Voltage (IE = 100 mAdc, IC = 0) V(BR)EBO 5.0 — Vdc
Collector Cutoff Current ICES mAdc
(VCE = 20 Vdc, VBE = 0) — 0.5
(VCE = 20 Vdc, VBE = 0, TA = 65°C) — 3.0
ON CHARACTERISTICS(1)
DC Current Gain (IC = 30 mAdc, VCE = 0.4 Vdc) hFE 30 120 —
(IC = 100 mAdc, VCE = 0.5 Vdc) 25 —
(IC = 300 mA, VCE = 1.0 Vdc) 15 —
Collector −Emitter Saturation Voltage (IC = 30 mAdc, IB = 3.0 mAdc) VCE(sat) — 0.2 Vdc
(IC = 100 mAdc, IB = 10 mAdc) — 0.28
(IC = 300 mAdc, IB = 30 mAdc) — 0.5
(IC = 30 mA, IB = 3.0 mA, TA = 65°C) — 0.3
Base −Emitter Saturation Voltage (IC = 30 mAdc, IB = 3.0 mAdc) VBE(sat) 0.73 0.95 Vdc
(IC = 100 mAdc, IB = 10 mAdc) — 1.2
(IC = 300 mAdc, IB = 30 mA) — 1.7
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
SWITCHING CHARACTERISTICS
Turn−On Time ton — 18 ns
(VCC = 10 Vdc, IC = 300 mAdc, IB1 = 30 mAdc)
Delay Time td — 10 ns
(Figure 1)
Rise Time tr — 15 ns
Turn−Off Time (VCC = 10 Vdc, IC = 300 mAdc, IB1 = IB2 = 30 mAdc) toff — 28 ns
Fall Time (Figure 1) tf — 15 ns
Storage Time ts — 18 ns
(VCC = 10 Vdc, IC = 10 mAdc, IB1 = IB2 = 10 mAdc) (Figure 2)
−3.0 V +10 V
33
1.0 k
+7.6 V
0.1 120 To Sampling Scope
0 Vin tr < 1.0 ns
tr, tf < 1.0 ns Zin = 100 kΩ
50
Pulse Width ≥ 240 ns
Zin = 50 Ω
10% Pulse
+10 V
+6.0 V Waveform
at Point “A”
91 0
+11 V 0.1
−4 V
890 10%
500 Vout
tr < 1.0 ns
Pulse Width = 300 ns
Duty Cycle = 2.0%
Zin = 50 Ω
Figure 2. Charge Storage Time Test Circuit
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MPS3646
TJ = 125°C
50
25°C
30 −15°C
− 55°C
20
10
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)
1.0
MPS3646
VCE, MAXIMUM COLLECTOR−EMITTER
TJ = 25°C
0.8
IC = 10 mA 50 mA 100 mA 200 mA
VOLTAGE (VOLTS)
0.6
0.4
0.2
0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
1.2 1.0
θV, TEMPERATURE COEFFICIENTS (mV/°C)
IC/IB = 10
Vsat , SATURATION VOLTAGE (VOLTS)
0.6 −0.5
(25°C to 125°C)
0.4 MAX VCE(sat) −1.0
qVB for VBE
(−55 °C to 25°C)
0.2 −1.5
0 −2.0
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 0 40 80 120 160 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
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MPS3646
DYNAMIC CHARACTERISTICS
200 200
VCC = 10 V IC/IB = 10
TJ = 25°C TJ = 25°C
100 100
TJ = 125°C
70 70
t d, DELAY TIME (ns)
VCC = 10 V
30 30
2V
20 20 VCC = 3 V
10 0V 10
7.0 7.0
5.0 5.0
1.0 2.0 5.0 10 20 50 100 200 1.0 2.0 5.0 10 20 50 100 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
50 200
TJ = 25°C VCC = 10 V
TJ = 125°C TJ = 25°C
IC/IB = 20 100 TJ = 125°C
30
t s , STORAGE TIME (ns)
IC/IB = 10 70
t f , FALL TIME (ns)
20 50
30 IC/IB = 20
20
10
IC/IB = 10
ts′ ^ ts − 1/8 tf 10
7.0
IB1 = IB2 7.0
5.0 5.0
1.0 2.0 5.0 10 20 50 100 200 1.0 2.0 5.0 10 20 50 100 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
10 1000
MAX 700 IC/IB = 10
TYP TJ = 25°C
500
7.0 Cibo TJ = 125°C
CAPACITANCE (pF)
300
Q, CHARGE (pC)
5.0 200
QT
100
VCC = 3 V
Cobo 70
3.0 50
VCC = 10 V QA
30 VCC = 3 V
2.0 20
0.1 0.2 0.5 1.0 2.0 5.0 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
REVERSE BIAS (Vdc) IC, COLLECTOR CURRENT (mA)
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MPS3646
PACKAGE DIMENSIONS
CASE 029−11
(TO−226AA)
ISSUE AD
A NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
B 3. CONTOUR OF PACKAGE BEYOND DIMENSION R
R IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
SEATING
DIMENSIONS D AND J APPLY BETWEEN L AND K
P PLANE
MIMIMUM. LEAD DIMENSION IS UNCONTROLLED
L IN P AND BEYOND DIMENSION K MINIMUM.
F
K INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.175 0.205 4.44 5.21
B 0.290 0.310 7.37 7.87
C 0.125 0.165 3.18 4.19
X X D D 0.018 0.021 0.457 0.533
G F 0.016 0.019 0.407 0.482
H G 0.045 0.055 1.15 1.39
J H 0.095 0.105 2.42 2.66
J 0.018 0.024 0.46 0.61
R K 0.500 −−− 12.70 −−−
L 0.250 −−− 6.35 −−−
SECTION X−X
1 2 3 N C N
P
0.080
−−−
0.105
0.100
2.04
−−−
2.66
2.54
R 0.135 −−− 3.43 −−−
N
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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MPS3646
Notes
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MPS3646
Notes
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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